CN101015066A - Hot electron transistor - Google Patents
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- CN101015066A CN101015066A CNA200580013289XA CN200580013289A CN101015066A CN 101015066 A CN101015066 A CN 101015066A CN A200580013289X A CNA200580013289X A CN A200580013289XA CN 200580013289 A CN200580013289 A CN 200580013289A CN 101015066 A CN101015066 A CN 101015066A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- Bipolar Transistors (AREA)
Abstract
A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.
Description
Technical field
Present invention relates in general to transistor, relate in particular to transistor and application thereof based on tunneling structure.More specifically, the present invention relates to thin-film transistor and application thereof based on tunneling structure.
Background technology
Nineteen sixty, Mead (Mead)
1At first propose to comprise the tunnelling hot electron transistor amplifier of metal-insulator-metal type-insulator-metal (M-I-M-I-M) structure, and Heiblum
2In 1981 it has been made labor.Forward accompanying drawing now to, as possible, assembly close in institute's drawings attached is represented by similar reference number.Turn to Fig. 1, be illustrated as a kind of exemplary M-I-M-I-M transistor in the prior art.Notice that for clear, these figure proportionally do not illustrate.
Fig. 1 illustrates the transistorized partial section of a kind of typical M-I-M-I-M, and this M-I-M-I-M transistor is usually by reference number 100 expressions.M-I-M-I-M transistor 100 comprises the individual layer that replaces of metal and insulator, and it comprises emitter 110, base stage 112, collector electrode 114, emission potential barrier 116 and current collection potential barrier 118.
Other researchers also after deliberation use the metal-insulator body structure of extension
3, the III-V semiconductor structure
4a, 4bWith the use ferromagnetic metal
4cAnd insulator
4dThe similar transistor arrangement of structure.
In addition, in a lot of circuit application, use complementary transistor, can make a transistor turns and have positive base-emitter voltage like this being favourable, and another complementary transistor turns and have negative base-emitter voltage.In this way, can make up push-pull amplifier or switching circuit.The example of this device comprises silicon CMOS (CMOS) or the bipolar push-pull power amplifier that uses low static power.
The hot hole transistor of prior art
8Have the M-I-M-I-M identical with the aforementioned hot electron transistor.The operation of device also is similarly, but the charge carrier in the described device is the hole, but not electronics.Yet there is identical problem in the M-I-M-I-M hot electron transistor of the hot hole transistor AND gate prior art of prior art.
As hereinafter illustrating, the present invention is by himself ability, provide to have the durable film device of strengthening the property, solved the problems referred to above that exist in the existing situation in present technique field simultaneously, thereby a kind of remarkable improvement for above-mentioned prior art is provided effectively.
Summary of the invention
As more detailed description hereinafter, a kind of hot electron transistor that is suitable for receiving at least a input signal is disclosed here.This transistor comprise emitter and with the base stage that emitter separates, make the described input signal of at least a portion be applied to described emitter and described base stage, and electronics launched towards described base stage from described emitter.Described transistor also comprises and placing between described emitter and the described base stage, and is set for first tunneling structure of the electric transmission between described emitter and the described base stage.Described first tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, this second insulating barrier is set to directly be close to the described first amorphous insulating barrier, and be set to cooperate with the described first amorphous insulating barrier, make described electric transmission comprise the transmission that utilizes tunnelling at least in part.Described transistor further comprises the collector electrode that separates with described base stage, and second tunneling structure between base stage and collector electrode.This second tunneling structure be set between described base stage and described collector electrode transmission from described emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described collector electrode.Described input signal can comprise for example bias voltage, signal voltage or electromagnetic radiation.
In yet another aspect, for described transistor, in described base stage and the described collector electrode selected at least one, form by semimetal at least in part.Alternatively, in described base stage and the described collector electrode selected at least one, form by metal silicide or metal nitride at least in part.
In yet another aspect, described second tunneling structure is configured to show thermoelectric subreflexive first value, wherein said second tunneling structure comprises moulding barrier energy band characteristic, make subreflexive first value of described thermoelectricity be lower than thermoelectric subreflexive second value, subreflexive second value of described thermoelectricity is the value that described second tunneling structure is shown when not having moulding barrier energy band characteristic.More specifically, described moulding barrier energy band characteristic comprises the parabola gradient of second tunneling structure.
In yet another aspect, described transistor is configured to show first value of electronics emitted energy width, wherein said first tunneling structure comprises moulding barrier energy band characteristic, make described electronics emitted energy width first value less than may electronics second value of emitted energy width, second value of electronics emitted energy width is the value that transistor shows when not having the barrier energy band characteristic of moulding.
In yet another aspect, described emitter is configured to show given Fermi level, and wherein said first tunneling structure is configured to show given conduction band, makes the difference of described given conduction band and described given Fermi level less than 2 electron-volts.
Aspect further one, a kind of hot hole transistor that is suitable for receiving at least a input signal is disclosed.This transistor comprise emitter and with the base stage that emitter separates, make the described input signal of at least a portion be applied to described emitter and described base stage, and the hole launched towards described base stage from described emitter.Described transistor also comprises and placing between described emitter and the described base stage, and is set for first tunneling structure of the hole transport between described emitter and the described base stage.This first tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, this second insulating barrier is set to directly be close to the described first amorphous insulating barrier, and be set to cooperate with the described first amorphous insulating barrier, make described hole transport comprise the transmission that utilizes tunnelling at least in part.Described transistor further comprises the collector electrode that separates with described base stage, and second tunneling structure between base stage and collector electrode.This second tunneling structure be set between described base stage and described collector electrode transmission from described emitter by at least a portion hole that ballistic transport is launched, make described a part of hole be collected at described collector electrode.
In yet another aspect, a kind of method that is used for hot electron transistor is also disclosed, comprise a plurality of layers in the described hot electron transistor, described interlayer limits a plurality of interfaces, ballistic electron transmits at described interlayer, described a plurality of layer comprises the adjacent one another are and juxtaposed ground floor and the second layer at least, limits first interface between the described ground floor and the described second layer, makes the described ballistic electron of at least a portion can be reflected at described first interface.A kind of method that is used for reducing at described at least first interface electron reflection comprises: construct described ground floor and select wave function to show first; Select wave function with the described second layer of structure to show second, make the first of described ballistic electron be reflected at described first interface; The described first of wherein said ballistic electron is less than the second portion of described ballistic electron, and the second portion of described ballistic electron is not construct the described second layer to show described second part that is reflected at described first interface when selecting wave function.
In yet another aspect, a kind of transistor that is suitable for receiving at least a input signal is disclosed.Described transistor comprises emitter and base stage, and this base stage and described emitter separate, and makes the described input signal of at least a portion be applied to described emitter and described base stage, and electronics is launched towards described base stage from described emitter.Described transistor also comprises first tunneling structure, and this first tunneling structure is placed between described emitter and the described base stage, and is set for the electric transmission between described emitter and the described base stage.Described transistor further comprises the collector electrode and second tunneling structure that separates with described base stage, this second tunneling structure is placed between described base stage and the described collector electrode, and be set between described base stage and described collector electrode transmission from described emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described collector electrode.Wherein, described second tunneling structure is configured to show thermoelectric subreflexive first value, described second tunnelling further is provided with to show the wave function of selection, make subreflexive first value of described thermoelectricity be lower than thermoelectric subreflexive second value, subreflexive second value of described thermoelectricity is the value that described second tunneling structure is shown when not having the wave function of selection.
In yet another aspect, a kind of linear amplifier that is suitable for receiving at least a input signal is disclosed.Described linear amplifier comprises: hot electron transistor, and this hot electron transistor comprises: first emitter; First base stage, this first base stage and described first emitter separate, and make the first at least of described input signal be applied to described first emitter and described first base stage, and electronics is launched towards described first base stage from described first emitter; First tunneling structure, this first tunneling structure is placed between described first emitter and described first base stage, and be set for electric transmission between described first emitter and described first base stage, described first tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, described second insulating barrier is set to directly be close to the described first amorphous insulating barrier, and be set to cooperate with the described first amorphous insulating barrier, make described electric transmission comprise the transmission that utilizes tunnelling at least in part; First collector electrode, this first collector electrode and described first base stage separate; With second tunneling structure, this second tunneling structure is placed between described first base stage and described first collector electrode, and be set between described first base stage and described first collector electrode transmission from described first emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described first collector electrode.Described linear amplifier also comprises: the hot hole transistor, and this hot hole transistor comprises: second emitter; Second base stage, this second base stage and described second emitter separate, and make the second portion at least of described input signal be applied to described second emitter and described second base stage, and the hole is launched towards described second base stage from described second emitter; The 3rd tunneling structure, the 3rd tunneling structure is placed between described second emitter and described second base stage, and be set for hole transport between described second emitter and described second base stage, described the 3rd tunneling structure comprises the 3rd amorphous insulating barrier and four insulating barrier different with it at least, described the 4th insulating barrier is set to directly be close to described the 3rd amorphous insulating barrier, and be set to cooperate with described the 3rd amorphous insulating barrier, make described hole transport comprise the transmission that utilizes tunnelling at least in part; Second collector electrode, this second collector electrode and described second base stage separate; With the 4th tunneling structure, the 4th tunneling structure is placed between described second base stage and described second collector electrode, and be set between described second base stage and described second collector electrode transmission from described second emitter by at least a portion hole that ballistic transport is launched, make described a part of hole can be collected at described second collector electrode.In described linear amplifier, described hot electron transistor and described hot hole transistor are set in the push-pull amplifier architecture.
Description of drawings
Can be in conjunction with the accompanying drawing of following simple description, by understanding the present invention with reference to detailed description subsequently.Should be noted that some element in the accompanying drawing is not shown to scale in order to illustrate clearly purpose.In addition, descriptive name for example is used for vertical, the level and the similar description of different accompanying drawings, just is used for illustrated purpose, and is not limited to the use orientation of described structure or device.
Fig. 1 is partial cross section's summary view of disclosed junction transistor device in above-mentioned ' 185 patents.
Fig. 2 is the energy band diagram corresponding to a kind of hot electron transistor of the present invention.
Fig. 3 is corresponding to the transistorized energy band diagram of a kind of hot hole of the present invention.
Fig. 4 A is the energy band diagram corresponding to another embodiment of hot electron transistor of the present invention.
Fig. 4 B is the summary view of the partial elevation view of hot electron transistor of the present invention, and equivalent circuit figure placed on it.
Fig. 5 is the energy band diagram corresponding to an embodiment of hot electron transistor of the present invention, and it shows the various gain-limitation mechanism that will overcome in order to obtain useful device with expression at this.
Fig. 6 A illustrates the comparison of two kinds of energy band diagrams, and it shows that at this structure that comprises double insulator with comparison and contrast and single insulator structure are for the influence from the Electron energy distribution of launching the potential barrier electrons emitted.
Fig. 6 B is the partial cross section's summary view that comprises the transistor device that double insulator structure emission potential barrier and texture collector electrode are inside according to the present invention.
Fig. 7 is a kind of composite curve, and it shows with explanation for the square current collection potential barrier with the different conduction band deep in 0.5～10eV scope at this, as the difference of the tunnelling probability of the function of electron energy.
Fig. 8 is a kind of composite curve, and it shows with explanation for parabola shaped and square (SQ) current collection potential barrier with the different conduction band deep in 0.5～2eV scope at this, as the difference of the tunnelling probability of the function of electron energy.
Fig. 9 is a kind of composite curve, and it shows with explanation for difform current collection potential barrier at this, as the difference of the tunnelling probability of the function of electron energy.Here suppose that conduction band offset is 0eV, barrier height is 0.4eV.
Figure 10 A-10X is the partial cross section's summary view that is used for making a plurality of stages that the process of piling up of a kind of embodiment of hot electron transistor of the present invention relates to.
Figure 11 A-11I is the summary view that is used for making the partial section in a plurality of stages that the planarization process of a kind of embodiment of hot electron transistor of the present invention relates to.
Figure 12 A is the equivalent circuit figure based on hot electron transistor of the present invention and the transistorized linear amplifier of hot hole.
Figure 12 B is the equivalent circuit figure based on the switch of hot electron transistor of the present invention.
Figure 12 C and 12D are energy band diagram, and the work of the two states of switch shown in Figure 12 B is shown.
Figure 12 E is the equivalent circuit figure of utilization based on the oscillator of the negative sense differential resistor (NRD) of hot electron transistor of the present invention.
Figure 12 F is the equivalent circuit figure based on the multi-frequency generator of hot electron transistor of the present invention.
Figure 12 G is the equivalent circuit figure with forward biased common emitter based on hot electron transistor of the present invention.
Figure 12 H is the equivalent circuit figure based on the oscillator with variable capacitance diode (being used to control oscillating voltage) of hot electron transistor of the present invention.
Figure 12 I is the equivalent circuit figure that the frequency mixer (mixer) of coupling is mated and exports in input that has based on hot electron transistor of the present invention.
Figure 13 is a kind of energy band diagram, and the use that double insulator in the current collection potential barrier adds the structure of metal level is shown.
Embodiment
Following description can make those skilled in the art realize and use the present invention, and is provided in the content and requirement of patent application.Those skilled in the art will be clearly presented in various modifications to the embodiment of described description, and the general principle here can be applied to other embodiment.Therefore, the present invention is not restricted to shown embodiment, but consistent with the maximum magnitude of principle described herein and feature.
Though approximately since nineteen sixty just to the analysis of M-I-M-I-M thin-film transistor structure, till now, do not prove that still it is economic available device.Recently, for the processing and the understanding of material, the development of device manufacturing and device forming technique aspect has been played positive role for the M-I-M-I-M thin-film transistor of realizing fully control and the possibility of understanding its working condition.In addition, as following will the argumentation in detail, the innovation that the application's assignee makes has further realized the improvement for the M-I-M-I-M thin-film transistor of prior art.
Improvement to the tunnelling hot electron transistor
In the present invention, discuss the key innovation for the sub-transistor arrangement of thin film thermoelectric, the device of the prior art of the device that these innovations propose us and a large amount of failures makes a distinction, and device of the present invention is become a kind of feasible thin-film transistor.In addition, also consider several possible improvement.
The use of double insulator (being I-I) structure in film metal-insulator structure, the United States Patent (USP) 6534784 (hereinafter referring to ' 784 patents) that is called " the metal-oxide electron tunneling device (Metal-OxideElectron Tunneling Device for Solar Energy Conversion) that is used for solar energy converting " in for example name is discussed in detail, the assigned assignee who gives the application of this patent, and be included in this as incorporated by reference.The I-I structure that comprises in the emission potential barrier has solved two problems at least.At first, because the I-I structure causes the non-linear significantly greater than the tunnel junctions of single insulator of its tunnel junctions, consequently, has higher difference conductivity (being used at a high speed) when (being used for high efficiency and low noise) at lower dc bias current.In addition, if avoided the charge storage of insulator-insulator interface, also can use two insulating barriers to reduce emitter-base stage capacity.Secondly, the thermionic energy aspect that is distributed in that is transmitted into base stage is narrow more a lot of than single insulator tunnel junctions, thereby obtains higher current gain.
A kind of junction transistor that structurally comprises at least one described I layer of multilayer tunneling structure in the M-I-M-I-M transistor shown in Figure 1, being disclosed in name is called in the U.S. Patent number 65363185 of " high-velocity electrons tunneling device and application thereof (High Speed Electron Tunneling Device and Applications) " (hereinafter referring to ' 185 patents), the assigned assignee who gives the application of this patent, and be included in this as incorporated by reference.That is to say that under the situation of junction transistor, emitter barrier 116 and/or collector barrier 118 comprise the multilayer tunneling structure.As is known to the person skilled in the art, junction transistor uses the bias voltage or the bias current of external bias source (not shown), transistorized operating point and power supply is set to drive output.These external bias sources are configured to apply voltage, for example in common emitter configuration, as the knot electromotive force of base-emitter and/or as the knot electromotive force of collector electrode-emitter.For example, bias source can be used for applying voltage to emitter and base stage and controls electromotive force in the emitter barrier 116, and from emitter 110 to base stage 112 electron tunneling probability.In a single day electronics is launched, and passes through emitter barrier 116 with regard to tunnelling, base stage 112, and collector barrier 118 enters collector electrode 114 with given current collection rate at last.The current collection rate is the function of the electronic section of tunnelling by base stage 112 in the clear.The tunnelling probability is by voltage that is applied to base stage and the decision of other materials performance.
The example of this junction transistor has been shown among Fig. 2, and it is included in the double insulator structure in the emitter barrier.Described N-I-I-N-I-N (N is a non-insulated layer usually, and I is an insulating barrier) transistor is a kind of improvement of the M-I-M-I-M tunnelling hot electron transistor structure of prior art, and its energy band diagram as shown in Figure 2.In described N-I-I-N-I-N transistor, the emitter tunnel junctions is injected base stage with hot electron.These electronics pass the thin metal matrix utmost point by ballistic transport.Ballistic transport is understood that it is that speed is higher than its heat balance speed and motion (for example electronic motion) that can scattering.Opposite with it, resonance tunnel-through is the electronic motion by the quasistatic energy level.
Overcome collector barrier if injected electrons has enough energy, they will continue its trajectory path up to arriving at collector electrode metal.On the other hand, the cold relatively electronics in the base stage of control base-emitter electromotive force does not have enough energy and overcomes collector barrier.Transistor current gain is by the ratio decision of emitter to the thermionic current and the base current of collector electrode.Disclosed as patent ' 185 and ' 784, the N layer can be formed by the various materials such as metal, semimetal, metal silicide or metal nitride, but is not limited thereto.
Continuation is with reference to Fig. 2, and it shows the energy band diagram 200 corresponding to N-I-I-N-I-N hot electron transistor structure.Energy band diagram 200 comprises X-axis 202 (thickness t of expression stacks of thin films) and Y-axis 204 (expression ENERGY E).The each several part of the energy band diagram 200 of N-I-I-N-I-N hot electron transistor structure corresponding emitter 210, base stage 212, collector electrode 214, emitter barrier structure 216 and collector barrier structure 218.Emitter barrier structure 216 comprises the first insulating barrier 216A and the second insulating barrier 216B.Just, emitter 210, base stage 212 and collector electrode 214, N layer in the corresponding N-I-I-N-I-N hot electron transistor structure, and the I layer in the first insulating barrier 216A in the emitter barrier structure 216 and the second insulating barrier 216B and the collector barrier structure 218 corresponding N-I-I-N-I-N hot electron transistor structures.The bias voltage (not shown) that is applied between emitter 210 and the base stage 212 causes from the emission of the ballistic electron with Electron energy distribution 221 220 of emitter 210, and Electron energy distribution 221 is by concentrating on the energy level 222 peak curve representation on every side shown in the arrow.In the transistor arrangement of energy band diagram 200 expression, use double insulator structure (that is, the first insulating barrier 216A and the second insulating barrier 216B) to cause, for example, the narrowing down of the spike width of Electron energy distribution 221, thus transistorized efficient improved.
In addition, semi-metallic, metal silicide or metal nitride can be used for forming at least a in base stage and the collector electrode.Metal silicide, for example cobalt and silicon compound (CoSi
2) and tungsten silicon compound (WSi
2) be semimetal, their conductivity and carrier concentration are between metal and semiconductor.Semimetal has showed the balance between high base stage conductance and the high current gain.
Another feature that can help to improve tft characteristics is at least a moulding (shaping) in emitter barrier and the collector barrier.Potential barrier can make the electronics that passes transistor device will run into being with of moulding by form characteristic electron gradient (grading) and moulding at least one side of film.The acquisition of for example, moulding potential barrier can realize such as factors such as composition, electron affinity, charge balance level, electron mass and dielectric constants by changing in the potential barrier forming process.For example, Yuan Xing collector barrier reduces the thermionic reflection at interface between electrode and potential barrier.The emitter barrier of moulding also causes the electronics emission narrowed width from the emitter to the base stage.
To another improvement of thin-film transistor is to use low potential barrier at least a in emitter and collector.Compare with using high potential barrier in the thin-film transistor of prior art, use low potential barrier can obtain high conductance (being used at a high speed) and thermionic low scattered power (being used for high-gain).
N-I-I-N-I-N transistor of the present invention compared with prior art shows plurality of advantages.Described N-I-I-N-I-N transistor is a kind of thin-film device that can form without semiconductor and epitaxy.For example, this N-I-I-N-I-N transistor can form (that is, forming the M-I-I-M-I-M structure) by metal and semiconductor fully, makes this transistor can be formed on the various substrates.Transistorized depositing temperature of described N-I-I-N-I-N and treatment temperature low (for example, being usually less than 250 ℃) make this N-I-I-N-I-N transistor can compatible can't stand the substrate of high-temperature process, for example flexible polymer substrate.And described N-I-I-N-I-N is durable device, and it turn-offs frequency (f
T) can be extended down to Terahertz (terahertz) scope.
Referring now to Fig. 4 A and 4B, N-I-I-N-I-N tunnelling hot electron transistor of the present invention has been described.Fig. 4 A shows the energy band diagram 400 of corresponding modified model N-I-I-N-I-N tunnelling hot electron transistor of the present invention.Energy band diagram 400 comprises the energy band level that is used for emitter 410, base stage 412, collector electrode 414, emitter barrier structure 416 and collector barrier structure 418.The emitter barrier structure has comprised the double insulator structure, comprises the first insulating barrier 416A and the second insulating barrier 416B.Base stage 412 is formed by metal silicide.In addition, collector electrode 414 comprises metal silicide layer 414A and metal level 414B.Fig. 4 B illustrates the partial elevational summary view corresponding to the N-I-I-N-I-N tunnelling hot electron transistor 450 (and equivalent circuit figure) of energy band diagram.
Described N-I-I-N-I-N tunnelling hot electron transistor is by summary view 450 expressions of energy band diagram 400 with Fig. 4 B of Fig. 4 A, and it illustrates the present invention for example and improves for the difference that prior art provided.Multiple factor helps improvement that this N-I-I-N-I-N transistor is carried out.
Compare with semiconductor transistor, the response of transistor arrangement shown in Fig. 4 B is fast, this be because: the 1) thickness of film and activate tie region and cause the carrier transmission time short; 2) on the described device and among employed metallicity or semimetal conducting shell cause series impedance lower, particularly in thin basic unit's neutralization particularly in frequency when hundreds of GHz (gigahertz) is above; 3) use high difference conduction N-I-I-N emitter structure to cause low and transimpedance (transimpedance) the gain height of emitter impedance; 4) use the low-k backing material to cause parasitism (parasitic) capacitance to substrate lower.Owing to be included in the thickness of the film in the N-I-I-N-I-N transistor, the tunneling time by emitter barrier is in a femtosecond (femtosecond) magnitude.In addition, pass the thermionic ballistic transport of base stage 412 (～10 nanometer thickness) and collector barrier structure 418 (～8 nanometer thickness) in 0.1 picosecond (picosecond) magnitude or shorter.In the N-I-I-N-I-N transistor shown in Fig. 4 A and the 4B, the metal of high conductance extends to described tying all the time, thereby compares with semiconductor device, has greatly reduced dead resistance, and causes high maximum oscillation frequency (f
Max).And, as can be known be to be subject to the plasma frequency of material by the high frequency conductibility of certain material.Though in a Terahertz (terahertz) magnitude, the plasma frequency of metal is in the ultraviolet range semi-conductive plasma frequency at most, make the high frequency conductibility of electrode layer in the N-I-I-N-I-N transistor much larger than in semiconductor device.In addition, use the double insulator structure in emitter barrier, high transconductance (transconductance) gain for when the low relatively dc bias current allows high difference conductibility, thereby causes high shutoff frequency f
T(for example, patent ' disclose the details of double insulator structure in 784).In addition, though known normally used Semiconductor substrate has high-k, but because the compatible various substrates of N-I-I-N-I-N transistor so described N-I-I-N-I-N transistor also can be made on the substrate of low-k, therefore minimize parasitic capacitance.
Compare with other hot electron transistors with the M-I-M-I-M of prior art, the transistor of Fig. 4 A has comprised several improvement on the current gain performance.At first, the shaping characteristic of the collector barrier of energy band diagram 400 part helps to reduce base stage-collector barrier-collector structure electron reflection at the interface.In addition, compare with the common metal layer, the base stage of semimetal and emitter layer (being denoted as metal silicide among Fig. 4 A) have also reduced these electron reflections at the interface.Secondly, M-I-I-M tunnelling emitter has the energy spread of higher difference conductibility and narrower emitting electrons than simple M-I-M emitter structure.The 3rd, the low barrier height between the conduction band edge of metal Fermi level and insulator has reduced electron reflection and stiff electron scattering.Hereinafter will discuss the details of aforementioned improved factor.
The important cognition of some of applicant has caused the exploitation of improved thin-film transistor.Be in particular, the applicant have realized that and based on the combination analyzing in detail of non-insulated layer and insulating barrier the physical mechanism of the gain-limitation process in the thin-film transistor, and the approach that overcomes these gain-limitation mechanism.What have recognized that is that the current gain in the hot electron transistor is subject to four kinds of mechanism: 1) the hot electron scattering in the base stage; 2) base-emitter leakage current; 3) inject the energy spread that hot electron distributes; And 4) electrode-potential barrier quantum-mechanical reflection at the interface.
With reference to Fig. 5 and in conjunction with Fig. 2 in these four kinds of mechanisms each is discussed.Fig. 5 comprises from the assembly of the energy band diagram 200 of the N-I-I-N-I-N hot electron transistor of Fig. 2 and four kinds of gain-limitation mechanism mentioned above.Gain-limitation mechanism shown in Figure 5 comprises: the hot electron scattering effect 505 in base stage (by the label in downward arrow and the circle 1 indication), base stage-collector leakage stream 510 (by 2 indications of the label in horizontal arrow and the circle), inject the energy spread 520 that hot electron distributes (by a pair of arrow of the both sides of Electron energy distribution curve 221 and label 3 indications of circle) and in the quantum mechanics reflection 530 (by label 4 indications of curved arrow and circle) at electronic barrier interface.
Because the interaction of electronics-electronics and the interaction of electronics-phonon, the hot electron scattering 505 in base electrode is inelastic scatterings.This inelastic scattering has reduced and has had enough energy to overcome the thermionic quantity of collector barrier.Be known that probability of scattering increases fast along with the increase of the electronic energy on the Fermi level.
Overcome the problem of this hot electron scattering, can use low tunneling barrier (for example 2eV or lower), for example niobium (Nb)-niobium pentaoxide (Nb
2O
5), tantalum (Ta)-titanium dioxide (TiO
2) and tantalum (Ta)-tantalum oxide (Ta
2O
5), and can use semimetal base stage electrode, for example metal silicide.Prior art M-I-M-I-M structure has adopted high barrier oxide, for example aluminium oxide (Al
2O
3), even this high barrier oxide is not to suppress fully, also can seriously limit current gain.The probability of crossing base electrode the hot electron trajectory that injects and scattering not taking place is by the base-transport factor-alpha
BGiven:
Wherein, x
BBe the thickness of base electrode, L
BBe to form mean free path in the material of base electrode (unit is nm/eV
2), and V
eIt is the hot electron energy on the Fermi level.L in the metal
BGeneral value at 20nm/eV
2Magnitude
4Therefore, for example, pass the base-transport rate α that the 0.3eV hot electron of 10nm base electrode will have
BBe approximately 0.14.Though the applicant does not consider the data about hot electron scattering length in semimetal that are disclosed, but what need obedience is, the semimetal scattering length will be longer than the scattering length of conventional metals, and this is because than metal, the free electronic concentration (～10 in the semimetal
22Cm) lower.In semimetal, do not probe into electronics-phon scattering and defect scattering rate, and further experimental study will quantize above-mentioned effect.
Second problem, base stage-collector leakage stream 510 (or dark current), it produces from the following fact, promptly, if it is highly too low that collector barrier can be with, then the cold electronics in base electrode can tunnelling arrive collector electrode by collector barrier, and perhaps vice versa.This external tunnelling current has constituted base stage-collector leakage stream, and causes the decline of transistor current gain.
The problem of base stage-collector leakage stream can be with height, width and shape to overcome by selecting suitable collector barrier.It is a kind of the trading off of reducing between hot electron scattering (requiring low barrier height) and the reduction base stage-collector electrode tunnelling current (requiring high barrier height) that collector electrode can be with selection highly.Use device model, applicant to have been found that to have and can be with collector barrier highly to cause good trading off between these two kinds of competition factors in the 0.3-0.8eV scope.And, discuss as previous reference thermal electron scattering problem, quantum mechanics map power can be improved because have the material of low-k by use, therefore, the leakage problem of base stage-collector electrode can be alleviated naturally by using lower collector barrier can be with height.
Similarly, the selection of collector electrode energy tape thickness is a kind of the trading off between device speed and the leakage current.Thicker potential barrier will produce lower leakage current, and but, the transmission time that ballistic electron passes through potential barrier also will increase.That is to say, with 10
7-10
8The potential barrier that the hot electron that ballistic velocity between the cm/s is advanced passes through 20nm expends the longer time than the potential barrier of passing through 5nm.Further problem is, whether scattering and heat energy is reduced to the conduction band edge of potential barrier of ballistic electron.Because employed potential barrier generally includes amorphous (amorphous) material in device of the present invention, so the mobility of electrical conductivity (that is, drift and diffusion) is very low.Therefore, if electronics by thermalization, then given electronics arrives the used time of collector electrode will be increased greatly.Therefore, should select potential barrier thickness to minimize with probability with the thermalization collision.
In addition, the shape that can be with of collector barrier has stronger influence to the hot electron transmission probability.Similarly, when effective barrier energy band height was approximately equal to average potential barrier energy band height, the barrier energy belt shape influenced base stage-collector leakage stream 5,5b.Therefore, also should consider leakage current when selecting suitable barrier energy belt shape for the hot electron transmission, this will carry out further detailed argumentation in hereinafter suitable position of the present disclosure.
The 3rd problem injected the energy spread 520 that hot electron distributes, and its generation is due to the fact that, that is, electronics that tunnelling is passed through emitter barrier is not a monoergic.That is to say, be the hot electron with energy spread from the electronics of emitter barrier.(that is, high-energy) electronics has much bigger possibility and carries out inelastic scattering, and the electronics of cold relatively (for example, low-yield) has lower possibility and crosses the transistor potential barrier, and its result is that transistor gain reduces because very hot.
The thermionic energy expansion can realize by comprise the double insulator structure in emitter barrier.In patent ' 784 with ' discussed the details of various double insulator structures in 185 in detail.Described narrowing down that emitting electrons distributes among Fig. 6 A, wherein the theoretic hot electron from single insulating barrier emitter being distributed to distribute with theoretic hot electron from the emitter that comprises the double insulator structure compares.Fig. 6 A shows from single insulating barrier M-I-M emitter and the comparison that distributes from the injection thermionic energy of double insulating layer M-I-I-M emitter.Fig. 6 A comprises composite diagram 600, comprises first Figure 60 1A and second Figure 60 1B.The top of Figure 60 0 comprises corresponding to an x axle 602A of distance with corresponding to the y axle 604A of energy, is used to show the energy band diagram of single insulating barrier M-I-M emitter.Y axle 604A and be used to show the curve 620A of electric current with respect to Energy distribution corresponding to the 2nd x axle 615A of electric current.With its similarly, the bottom of Figure 60 0 comprises corresponding to an x axle 602B of distance with corresponding to the y axle 604B of energy, be used to show the energy band diagram 610B of double insulating layer M-I-I-M emitter, corresponding electric current illustrates by y axle 604B and the 2nd x axle 615B with respect to the curve 620B of Energy distribution.By electric current relatively as can be seen, the much narrow peak that has occurred electric current/Energy distribution in the double insulator structure in emitter with respect to the curve 620A of Energy distribution and 620B.From the thermionic narrower distribution of the emitter that wherein has the double insulator structure, cause current gain to increase.
Continuation is referring to Fig. 6 A, and the narrow electron distributions that is caused by the emitter that comprises the double insulator structure also can be used for some unconventional application of N-I-I-N-I-N, for example frequency multiplier and short pulse generator.The additional benefit that the N-I-I-N diode structure provides is the low current under the reverse bias, and it can be used for transformation applications.Low current under the reverse bias can be further strengthened by the emitter metal of using aplitic texture (thin textured), the emitter metal of described aplitic texture can by for example under high pressure and low cathode voltage sputter form.The collector electrode of this structure is shown among Fig. 6 B, wherein show the transistor 650 that comprises double insulating layer emitter barrier (having first insulating barrier 654 and second insulating barrier 656 respectively), wherein collector electrode 658 is shown as the step-like structure that is included in away from collector barrier 118 1 sides.
The 4th problem, the thermionic quantum mechanics reflection 530 at nonisulated-insulator interface place, it is to need the most serious challenge that overcomes in four kinds of gain-limitation mechanism
6People such as Ludeke observe hot electron by experiment at palladium (Pd)-silicon dioxide (SiO
2Fluctuation transmission in)-silicon (Si) structure
7Usually, the applicant recognizes, alleviate the quantum mechanics reflection problems, just needs to reduce the wave function contrast of crossing film transistor device.The applicant proposes a kind of approach with two branches and solves this important problem, and this will discuss at once hereinafter in detail.
First approach is based on the use of semimetal base stage and collector electrode.For wave function contrast and collector barrier between base stage and the collector electrode are minimized, the energy difference between the conduction band edge (being in the top of collector barrier) in conduction band edge in electrode (EeV place under the Fermi level) and the insulating barrier will minimize.Typical metal such as aluminium or copper has the conduction band edge that is positioned at 10eV magnitude under the Fermi level.Other special metal such as niobium or silver has the conduction band edge that is in 5eV magnitude under the Fermi level, so these metals can be more preferably used in the transistor of the present invention.In addition, because the carrier concentration that metal silicide has is～10
22Cm
-3, can infer to dope that the conduction band deep that metal silicide had is 1-2eV only from this information.
Get back to Fig. 7 now, it shows conduction band deep influences T (E) in hot electron transmission.Fig. 7 comprises composite diagram 700, and it comprises the hot electron transmission curve that a plurality of different conduction band deep values are calculated.Illustration has been described the model that is used to calculate, just with the square potential barrier 710 of first electrode 720 and second electrode, 740 side joints.Potential barrier supposition in this calculating has the thickness of 4nm and being with highly of 0.77eV.The Fermi level of electrode is assumed to E=0eV.Numeral given in legend is corresponding to the conduction band deep under Fermi level in the electrode (Ec, unit are eV).Can be as can be seen from Figure 7, conduction band deep is reduced to 1～2eV and causes electron reflection to be reduced to the acceptable value, and wherein viewed in the drawings described conduction band deep is rendered as the fluctuation degree of depth.
Using the other benefit of metal silicide in electrode is its compatibility for the integrated processing of circuit of standard.Compromise impedance in the base stage of using semimetal rather than conventional metals and collector material for the increase base electrode.The increase of base electrode impedance has reduced transistorized maximum fluctuation frequency f
Max, it is given by following formula:
Wherein, f
TBe transistor cutoff frequency (determining) by emitter differential resistor that is in biasing and emitter junction electric capacity, R
BBe the small-signal base resistance, and C
CIt is collector junction capacitance.When using semimetal base stage electrode, can reduce base resistance by using the semimetal thick-layer as base electrode and/or by increasing thin layer such as the high-conductivity metals of tungsten.Yet these two kinds of approach have all reduced transistor gain to a certain extent, and this is because they trend towards being increased in the hot electron scattering of base electrode, also because the reverberation electronics extraly of the interface between conventional metals and semimetal layer.
In this, operate at the place that transistorized operation can be limited in the fluctuation peak, as shown in Figure 7.In addition, ferromagnetic insulator and/or metal can use in conjunction with emitter or collector region, and hot electron is concentrated and raising differential resistor R to strengthen
S, and electro-magnetic feedback is provided.Differential resistor R
SCan be observed by input such as near the fluctuation voltage Vcos (wt) the bias point.
The approach of multiple layer metal can further be improved, thereby produces quarter-wave anti-reflecting layer between conventional metals layer in base electrode and the collector barrier.Further, if the selected particular energy that is in of semimetal layer thickness and conduction band deep, then the interference effect in three layers tends to make that the hot electron reflection is invalid.Therefore, transistor gain can correspondingly increase.
Reducing second approach of quantum mechanics reflection can be with based on the collector barrier of using gradient.For example, by the change of component in potential barrier, rather than the physical form of conduction band edge changes in the oxide layer, can obtain " moulding " potential barrier.For example, by with the collector electrode oxide from low barrier material to high barrier material (for example, Nb
2O
5-Nb
2xTa
2-2xO
5-Ta
2O
5) and get back to low barrier material once more and carry out gradually gradient distribution, can obtain gradient distribution barrier energy band.This approach successfully has been applied to the III-V semiconductor transistor construction
4But the applicant is applied to the non-semiconductor transistor technology with this technology unintentionally.
Get back to Fig. 8 now and in conjunction with Fig. 7, compare by different way for the gradient effect of collector barrier.Shown in the illustration among Fig. 7, composite diagram 7 shows each the hot electron transmission curve that is calculated according to different conduction band deep values for square potential barrier.Composite diagram 800 shown in Fig. 8 comprises many hot electron transmission curves that adopt different conduction band deep values to be calculated for the parabola potential barrier.Illustration shows the model that is used to calculate, that is, and and by the parabola potential barrier 810 of first electrode 820 and the second electrode electrode, 840 side joints.In Fig. 8, the transmission of the transmission of square barrier energy band and parabolic potential barrier energy band compares, shown in legend.Fig. 8 shows that than the situation of square collector barrier, the parabola gradient that collector barrier is carried out has significantly reduced the hot electron reflection.
Referring now to Fig. 9, its effect that different gradient produced to collector barrier compares.In Fig. 9, shown in legend, compared by comprising the electric transmission that following each structure barrier energy band is carried out, described each structure comprises: square, parabola, semi-parabolic, circle, semicircle, linear gradient and semilinear gradient.For example, the example of square barrier structure is shown in the illustration of Fig. 7, and parabolic potential barrier energy band is shown in the illustration of Fig. 9, and circular configuration is shown among Fig. 4 A.Fig. 9 comprises figure 900, and it shows for different collector barrier shapes, the functional relation of tunnelling probability and electron energy.Suppose that conduction band band rank (offset) are 0eV, barrier height is 0.4eV.For " partly " specifies, suppose that collector barrier has only leading edge (that is base stage one side) by moulding.As shown in Figure 9, the side that can be with collector barrier is carried out gradient distribution and has been reduced vibration, and the both sides that can be with collector barrier are carried out gradient distribution and made that the quantum mechanics reflection is reduced to greatest extent simultaneously.Ideally, the conduction band edge of barrier energy band is got back to the gradient distribution of minimum constructive height then from the metal conduction band edge to maximal potential barrier energy band height, and the hot electron reflection is lowered to greatest extent.In the manufacturing of practical devices, the most feasible approach is that being with from alap energy of barrier material carried out gradient distribution.
As what in about the part that reduces base stage-collector leakage stream, discussed,, alleviated thermionic quantum mechanics reflection naturally by using lower barrier energy band.This effect is owing to quantum mechanics map power, and this map power for example can strengthen by using low dielectric constant insulating material.Use has similar electron affinity but has the insulating material of differing dielectric constant, by thin-film transistor structure, also helps to regulate conduction band and tilts or electric field.
Thermionic quantum mechanics reflection can be by further being reduced in conjunction with having near the insulating material of consistent electron tunneling quality (electron-tunnel mass).By using this material, when base stage-when the collector electrode dark current is lowered, reduced the vibration degree of depth of tunnelling probability, meanwhile, increased frequency of oscillation, therefore cause higher average tunnelling probability in certain energy range.
More broadly, the applicant recognizes, for the consideration of making film transistor device aspect effectively and at a high speed, is to consider when ballistic electron passes through described device the coupling wave function at thin layer.In other words, thus by to the selection control of the suitable material that forms various thin layers and manufacturing process wave function, can be adjusted in the electron reflection on each interface between each layer as required by each thin layer.For example, specific material can selectedly be used in the thin-film transistor structure, and this is due to the fact that promptly, for the layer of correspondence, described material has desirable dielectric constant characteristic or chemical constituent.The wave function of given thin layer can further be affected, and for example, (for example carries out gradient distribution by the component to layer, form parabola energy belt shape), by using or produce magnetic field (for example, in the situation of ferromagnetic material), perhaps pass through this layer interpolation surface texture (texture).Similarly, by for example in emitter barrier, realizing the double insulator structure, in transistor, can realize the narrower distribution (that is more single-frequency energy electron) of emitting electrons.Can recognize in order that, regulate the cognition of the possibility of (tailoring) for characteristic such as some thin-film transistor of Electron energy distribution width and electron reflection rate at the interface, can be by realizing that with considering the wave function of being mated this cognition is a great advance in the prior art of thin-film transistor.And, be in the fermi level pinning (pinning) and the distribution of the potential well state at base electrode-collector barrier and collector barrier-collector electrode interface, can be used for assisting discontinuity to minimize with conduction band.
Tunnelling hot hole transistor
As replenishing of tunnelling hot electron transistor of the present invention mentioned above, the film tunneling transistor that transmits based on hot hole will be described hereinafter.
The transistorized energy band diagram of M-I-M-I-M hot hole has been shown among Fig. 3.Contrast hot electron transistor shown in Figure 2, can be with and be reversed; That is to say that the barrier height in tunnelling hole is the energy difference between metal Fermi level and the insulator valence band edge.
Continuation is with reference to Fig. 3, and it has described the energy band diagram 300 corresponding to N-I-N-I-N hot hole transistor arrangement.The each several part of energy band diagram 300 comprises emitter 310, base stage 312, collector electrode 314, emitter barrier structure 316 and collector barrier structure 318 corresponding to forming transistorized each layer of N-I-N-I-N hot hole.Hot hole 320 is launched from emitter, crosses collector barrier, is collected in collector electrode then.
In order to realize this device as shown in Figure 3, the difference between the working function of metal and the electronics of insulator are affine should add the difference between the working function of affine sum of electronics and metal greater than the band gap of insulator.Alternatively, peripheral control method can be used for suppressing electron tunneling
9
Can realize multiple improvement that basic M-I-M-I-M hot hole transistor (as shown in Figure 3) is carried out according to technology of the present invention.For example, comprise that in emitter barrier the double insulator structure can produce the advantage identical with the structure with reference to hot electron transistor mentioned above.In addition, the double insulator structure can be included in the collector barrier, so just can help to reduce base stage-collector leakage stream and strengthen the hot hole transmission.In addition, use the collector barrier of gradient distribution can be with the hot hole reflection that will be reduced in nonisulated body-insulator interface.And, as in hot-electron device, by the electrode material of suitable selection base stage and collector electrode, can be with the hot hole reflection minimized.
A main difference between hot-electron device and hot hole device is that in hot-electron device, electronics enters the conduction band of insulator from the conduction band tunnelling of metal.In the situation of hot hole, the hole enters the valence band of collector barrier from the conduction band tunnelling of metal.
Transistor fabrication process (process)
Two kinds of methods of manufacturing thin-film transistor of the present invention are hereinafter disclosed:
1. pile up process (stack process)
2. planarization process (planar process)
First method is meant the process of piling up, and comprising: the MIxMxIxM transistor stack of integral body is deposited in the single vacuum deposition system.Discuss as previous, " M " of indication layer can be any suitable non-insulating material herein, comprises, for example metal or some metals and nonmetallic composition.The deposition that realizes layer can be by various conventional methods, such as but not limited to, thermal evaporation, sputter, chemical vapour deposition (CVD) and atomic layer epitaxy.A kind of cluster (cluster) instrument can be used in carries out various depositions in isolation ward, and can not make described structure be exposed to atmosphere.The process of piling up is considered to and can provides control to greatest extent to layer thickness, component and cleannes.The process of piling up can further be divided into two scopes: material and processing.Requirement to material is to use and may deposits described piling up by different deposition processs, thereby produces desirable electronic interface.Requirement to processing is a plurality of processes of exploitation, and it allows to form (pattern) and contact after this for the required layer that may be embedded in the described intermediate layer of piling up.Also can or pile up and be divided into a plurality of piling up, can carry out centre processing as long as can guarantee the part of being divided with the transistor goods.
Each of piling up layer, its most basic form comprises: emitter metal, emitter-base oxide, base metal, base stage-collector electrode oxide, collector electrode metal.Because the upper surface of collector electrode metal is exposed to atmosphere after deposition, should use oxidation-resistant material to come the covering set electrode metal, remove any natural oxide or the pollutant that is formed on the collector electrode metal top unless during processing after this, use such as the abrasion method of argon ion abrasion (milling) such as NbN.With respect to hot electron mean free path (～100nm, its value depends on electron energy and base metal), base metal must be made very thinly.Base metal also must be " outlet (dug out) " of piling up, so it can touch external circuit.Can comprise etching resistance agent (etch stop), so that the abrasion base layer.In addition, definitely can not oxidation in case base layer exposes.This can realize by comprising such as the cover layer of NbN.It is thin that (～1-5nm) emitter oxide can comprise multiple adjacent oxide (or metal), to impel the emitter of monoenergetic electron beam.It is thick that (～4-20nm) collector electrode oxide can comprise multiple adjacent oxide or silicide, and to reduce the thermionic reflection of emission, the bias current with base stage-collector electrode minimizes simultaneously.Though emitter, base stage and collector electrode all are described to metal, it also can be semimetal, silicide, semiconductor, superconductor or superlattice.Similarly, the oxide of emitter-base stage and collector-base there is no need to be confined to traditional oxide.
Manufacturing process is hereinafter described used and is singly piled up deposition, reactive ion etching (RIE) and float off the metal level that (lift-off) technology forms shaping (pattern).Also can form the metal level of shaping by chemical etching, reactive ion etching, abrasion (milling) and other technology.Can use different substrates, on these substrates, make the MIxMxIxM transistor; What use in the process described below is silicon substrate.The summary of typical device manufacture process is shown in Figure 10 A-10X and is described below:
1. thorough clean silicon wafer for example uses SPM, SCI, BOE, the SC2 order of standard.
2. thermal oxidation thickness is isolated thereby provide electric between MIxMxIxM transistor AND gate silicon substrate less than the substrate of 1 μ m.
3. form emitter contact chip (contact pad) (be used for electricity and insert described device)
A. photoetching (lithography) is to limit the contact chip shape:
I. (HMDS) go up at priming paint (primer) with 6000rpm rotation 30 seconds,
Ii. go up 30 seconds (time and rotary speed depend on employed concrete resist) of rotation at resist (resist) with 6000rpm,
Iii. on baking tray with resist layer with 60 seconds (time and temperature depend on employed concrete resist) of 110 ℃ of prebake,
Iv. with resist layer exposure (expose) 18 seconds (time for exposure depend on employed concrete resist and the thickness of resist)
V. use developer solution (deionization (DI) water is 4: 1 to the ratio of developer) with the resist layer preset time (developer solution depends on employed concrete resist and developer) that develops,
Vi. use DI water rinse (rinse) to remove developer,
Vii. adopt O
2Plasma cleaning is handled (cleaning) to clean the resist opening;
B. tack coat (chromium of 5nm) is carried out thermal evaporation,,, can carry out electrical resistivity survey to device and survey (probe) by this tack coat to form the anti scuffing metal;
C. contact layer (gold of 35nm) is carried out thermal evaporation, be used to prevent the oxidation of contact position, and promote to the ohmic contact of the emitter layer that piles up;
D. float off, to remove irrelevant material:
I. on circulator, adopt acetone to carry out low speed and float off,
Ii. adopt acetone to carry out ultrasonic bath (if necessary accelerate situation about floating off),
Iii. on circulator, adopt acetone to float off,
Iv. on circulator, adopt isopropyl alcohol to clean,
V. rotation dries;
According to desirable transistor specifications and lithographic capabilities, above-mentioned steps can be divided into a plurality of steps.For example, can be shaped by the standard photoetching (pattern) big trace (trace), and the connection from transistor to these traces can form by electron beam lithography.
4. deposit the MIxMxIxM transistor stack.Transistor stack can deposit on entire wafer, perhaps, can deposit by floating off in the specific region that step limits.Following piling up provides a kind of example of piling up that is deposited in the single vacuum moulding machine instrument.
A.Nb emitter metal (80nm): this selection be because the barrier nature of its emitter-base oxide, at CF
4/ O
2In carry out RIE abrasion ability, form the ability of edge oxide, to the excellent bonds of emitter contact position.Metal can deposit by direct sputter.
B.Nb
2O
5/ Ta
2O
5Emitter-base oxide (2nm/2nm): this second kind of structure provides narrow emitting electrons width, at CF
4/ O
2In carry out the ability of RIE abrasion, and be easy to carry out reactive sputtering.
C.Nb/NbN/Cr/Nb base metal (3nm/1nm/3nm/3nm): this base metal comprises the Nb on the outward flange, and selecting Nb is owing to its barrier nature at emitter-base stage and base stage-collector electrode oxide, at CF
4/ O
2In carry out the ability of RIE abrasion and form the ability of edge oxide.The Cr layer of planting in described base metal is as RIE etching resistance agent, and it allows accurate prevention and the oxidation of easy edge on the base metal.After Cr was removed, NbN provided the oxidation resist contact to base electrode.Described metal can be deposited by direct sputter.Described nitride can form by the nitrogen plasma of reactive sputtering or directly sputter.
D.Nb
2O
5Base stage-collector electrode oxide (10nm): use low and wide collector electrode oxide, pass through with the hot electron that allows self-electrode, reduce the base-emitter electric current simultaneously, this electric current causes by applying or be created in the biasing on the collector electrode oxide.Carry out gradient distribution for oxide component, with the metal oxide interface that obtains to link up, this process is preferably used for reducing the reflection of hot electron collision potential barrier.Can come deposition oxide by reactive sputtering.
E.Nb/NbN collector electrode metal (20nm/1nm): the selection of described collector electrode metal be because the barrier nature of its collector electrode oxide, at CF
4/ O
2In carry out RIE abrasion ability and with the compatibility of stable nitride NbN.Can pass through the described metal of direct sputtering sedimentation.Described nitride can form by the plasma of reactive sputtering or directly sputter.
5. the deposition collector electrode limits metal-collector electrode qualification metal and is used to provide RIE abrasion mask, thereby defines the specification of transistorized collector-base.Can use the process that floats off of taking Cr/Au (5nm/35nm).Au is flexible for the RIE etching, and provides good electrical contact for transistor and outer locator/sheet (probes/pads).50: 1 H
2O: HF solution can be used for removing formerly treatment step may be created in any possible oxide on the NbN top.
6.RIE abrasion collector-base: use CF
4/ O
2The RIE system, transistor stack is by downward etching, the Cr etching blocking layer in base metal.
7. remove etching resistance agent: use dry-etching or wet chemical etch, come the Cr metal etch resistance agent in the etching base stage, be not subjected to the protection of collector-base structure, thereby this blocking layer is removed the NbN layer that exposes base stage.
8. the deposition emitter limits metal: use and float off technology with al deposition (part that comprises collector electrode) on described piling up, thereby define the specification of emitter-base stage.Al is as etching mask.
9.RIE the described emitter that piles up of etching-base stage part.
10. edge oxidation: the edge of emitter and base metal now can be oxidized, to protect and passivation.This can or use oxygen plasma to realize by oxidate.
Be easy to remove Al etching cover 11. remove Al etching cover-use AZ400K.
12. use floats off process and deposits the base stage contacting metal.Cr/Au (5nm/180nm) is deposited over the top of the base stage NbN of exposure.50: 1 H
2O: HF solution can be used for removing any possible oxide that may be created in the NbN top in formerly the treatment step.This process can comprise that also the collector electrode metal contact is to extend to external circuit or detector sheet.
In the structure that preparation is finished, emitter is positioned at the bottom that piles up, and collector electrode is positioned at the top layer that piles up.This neither be necessary, and the position of emitter and collector can exchange.According to employed deposition technique, it is favourable adopting specific order.
Second kind of preparation method is called as plane treatment, is included in be shaped on the substrate (pattern) base stage joint and collector electrode or emitter joint, and then the remainder of preparation transistor arrangement.This preparation method's advantage is need not carry out the retrofit of etching on thin base metal.The shortcoming of this method is that the deposition that MIMIM piles up has been divided into two-layer (stage), makes an interface of transistor arrangement be exposed in the atmosphere on every side, may cause the pollution at this interface and might form native oxide at described exposed surface.Shown in Figure 11 A-11I, specifically describe as follows for the summary for preparing the processing typical device:
1, cleans silicon (or polysilicon) substrate surface;
2, shaping base stage and collector electrode (or emitter) metal on silicon face;
3, wafer is annealed form metal silicide in the silicon so that electrode metal is diffused into;
4, etched wafer stays the conductive silicide track to remove residual metallic on silicon face;
5, deposition and shaping collector electrode oxide on the collector electrode surface;
6, at the side of transistor arrangement shaping base stage and collector electrode joint (being generally gold);
7, piling up in surface deposition base metal/emitter oxide/emitter metal;
8, the etch mask that on transistorized knot and the base stage below it, is shaped;
9, etch away residue and pile up, stay piling up above the collector electrode with along the base stage-oxide on the base stage cross section-emitter;
10, remove etch mask;
11, at the thick emitter joint layer (being generally gold) of collector electrode joint central authorities shaping;
12, use emitter joint layer as mask, the remaining emitter metal of etching is until the emitter oxide downwards.
The application of metal-insulator thin-film transistor
We have described several application of metal-insulator thin-film transistor.Except the application such as linear amplifier, resonator or switch of routine, we have also discussed the transistorized several aspects of hot electron/hot hole, and it be can be used in the quite new application.
1, linear amplifier/resonator
These transistorized conspicuous application are exactly as linear amplifier.Figure 12 has shown the equivalent circuit figure of linear amplifier 1200, comprising the hot electron transistor of the present invention 1210 and the hot hole transistor 1212 of the present invention of formation push-pull type structure.Like this, these transistors can be used as the resonator in power amplifier, low noise amplifier or the high-frequency circuit.Also can realize adopting simultaneously the push-pull amplifier of hot-electron device and hot hole device.Because these devices are films and very durable, these devices can be applicable to flexible electronic device, the microwave circuit on low-loss or flexible substrate, and can with such as in mutually integrated mixing (hybrid) circuit of silicon CMOS or III-V family opto-electronic device.
2, single-pole double throw (SPDT) switch
The transistorized interesting feature of hot electron (hole) is, it has the non-zero conducting voltage, and this is because emitting electrons must have enough energy to overcome collector barrier.Because the energy approximation that most of emitting electrons has equals the base-emitter potential difference, so conduction threshold is approximately equal to this barrier height.Like this, when base-emitter potential difference during greater than conduction threshold, most of emission current arrives the collector electrode joint; And when base-emitter potential difference during less than conduction threshold, emission current can not overcome collector barrier and send from the base stage joint.By this way, the function of hot electron transistor is equivalent to single-pole double throw (SPDT) switch.The equivalent circuit figure of an embodiment of this device is shown in Figure 12 B, and the energy band diagram of different on off states is shown in Figure 12 C and the 12D.
3, negative differential resistance amplifier/oscillator
As mentioned above, along with the increase of base-emitter potential difference, emitter current turns to collector electrode by base stage.Consequently, when electric current begins to change, between base stage and emitter, form negative differential resistance.Be that negative differential resistance can be used for amplifying and vibration as is well known.The equivalent circuit figure of this class device is shown in Figure 12 E.
4, multi-frequency generator
The notion of multi-frequency generator is derived from the notion of above-mentioned single-pole double-throw switch (SPDT).To the suitable feedback of base stage, transistor can form between base stage and collector electrode with emitter as the common electrode output current that vibrates by collector electrode.The equivalent circuit figure of this class device is shown in Figure 12 F.For simply, the circuit clock transmission (CKT) of biasing is not shown among Figure 12 F.
5, nonlinear amplifier/impulse generator
As previously shown, hot electron transistor has when emitting electrons and has the conduction threshold of enough energy when overcoming collector barrier.Usually, people expect that linear amplifier has smooth gain response, and transistor should be biased to obviously above threshold voltage.Yet non-linear gain is useful to some application sometimes.The short pulse maker just belongs to this class and uses.
If to conduction threshold (as above-mentioned), wherein current gain is converted to its maximum from zero with transistor biasing, transient response is typical nonlinear.Can produce the current spike of a series of weak points at the vibration input voltage between base stage and the emitter in collector electrode output, this is because gain is maximum when input voltage is higher than threshold value, is zero and gain when input voltage is lower than threshold value.If this potline current spike is converted into low voltage oscillation signal, and enter nonlinear amplifier with suitable voltage levvl feedback, then the spike of output will become narrower then.Mean that by suitable voltage levvl the input signal vibration can not surpass transistorized gain saturation point, otherwise signal peaks will can not become narrower.The width boundary of output spike equals 1/ (2 π f
Max), it may be as short as 100fs for the MIMIM transistor arrangement of being considered, and this depends on base resistance.The limiting value of described boundary is 1/ (2 π f
T).
6, frequency multiplier
In linear amplifier, should reduce quantum mechanics oscillation effect, to obtain smooth gain in collector barrier as far as possible; Yet, in some application, may wish these spike variations are used for gain as advantage such as frequency multiplier.In this case, we do not attempt to reduce the gain oscillations that causes owing to thermionic quantum mechanical effects.If for one or more such oscillatory scanning base-emitter input potential differences, the output signal of generation will be the multiple of incoming frequency.Like this, if use a kind of vibration input voltage, its voltage oscillation amplitude equals the one-period of gain oscillations, and then output signal will be the twice of incoming frequency.If two gain oscillations of input voltage scanning, then output will be four times of incoming frequency.
Based on the equivalent circuit figure of the common emitter 1400 of these principles shown in Figure 12 G.In the time of in being set at the NDR scope, common emitter 1400 is as the NDK amplifier.Transistorized working point is depended in linear or non-linear amplification.By the suitable selection of transistor design, common emitter 1400 also can be used as frequency multiplier.Common collector or base structure also are possible.Discrete assembly can comprise the RF transmission line assembly.Matching system can be arranged on before the load and/or source electrode after.In addition, filtering and/or cascade amplifier also are possible.By using this class input, described device also can be used as infrared (IR) (perhaps Terahertz or microwave) detector.
Figure 12 H shows the equivalent circuit figure of the oscillator of (the making that described vibration is by voltage control) 1450 that be used to have variable capacitance diode.There are various possible structures, cascaded structure for example, Ke Bizi (colpitts) oscillator structure, hartley (Hartley) oscillator structure, Ke Laipu (clap) oscillator structure, common emitter configuration, common base structure, common collector configuration etc.
7, non-linear rectifier/gain mixer
Be similar to above-mentioned application, can use transistorized sharp-pointed relatively conducting response, using for rectification and mixing provides high non-linear.Transistor should be biased to conduction threshold, and input signal should be between base stage and emitter.Output signal is a collector current.The nonlinear sharpness of conducting, and the effect of rectification or mixing are subject to the thermionic distribution of self-electrode to a great extent.Here, the MIIM emitter structure is better than the MIM emitter.Base stage-collector bias voltage also has nonlinear effect, and higher potential difference (with respect to base stage, current collection very just) provides more sharp-pointed conducting.
Transistor increases the power gain of signal by base stage-collector bias voltage.
Compare with traditional two ends diode, the advantage that this rectifier/frequency mixer increased is that its input and output resistance can be different, and can be adjusted into coupling specific source electrode and load resistance.For example, input can be connected on the antenna in 200 Europe as source electrode, the transmission line that drives 50 Europe is as load.
We also can use the gain oscillations that causes owing to the reflection of the quantum mechanics in the collector electrode, to provide non-linear.Transistor biasing will be produced negative differential resistance to the negative sense gain peak.
In Figure 12 I, provided equivalent circuit figure based on the frequency mixer 1500 of above-mentioned principle.Frequency mixer 1500 comprises input coupling and output coupling.The significant advantage that frequency mixer 1500 is compared with diode is gain.
The Infrared Detectors that 8, gain is arranged
This application class is similar to above-mentioned rectifier/frequency mixer, and its difference is that to infrared input term signal, the tunnelling that has photon to assist is estimated and will be occupied leading position in typical rectification.In this case, photon is given the tunnelling electronics with their power transfer.Like this, base-emitter voltage can be reduced to the energy than the low photon of conduction threshold.When hanging down biasing, base-emitter diode has lower dc bias current and lower emission noise.And signal power gain depends on the ratio of base stage-collector bias voltage and base-emitter bias voltage.
Conclusion
Though each aforesaid physical embodiments is illustrated, it has the different assemblies of application-specific direction separately, but it should be understood that the present invention also can adopt various ad hoc structures, these structures have connecting each other between the different assemblies of various diverse locations and each assembly.In addition, method described herein can have unlimited multiple alter mode, for example, can pass through to form aforesaid transistor device on flexible substrate, thereby utilize the compatibility of transistor device of the present invention and lower temperature substrate.Other modification comprises, but be not limited to, in transistor, use the M-I-M-I-M-I-M emitter structure, in transistor, use M-I-I-I-M emitter/collector structure, the N-M-N base stage, in collector barrier, use many insulating barriers, in application, increase various couplings/filtration/bias structure, (for example realize the Different Logic circuit based on aforementioned switches, NAND, NOR, transducer etc.), be connected the I/O that antenna is used for various application.And the thin metal in collector barrier is used in applied voltage in the collector barrier, thereby further should be used for regulating potential barrier conduction band shape by external voltage.Figure 13 illustrates an embodiment of this structure, and it comprises the energy band diagram that is used for transistor arrangement, and this transistor comprises three layers of collector barrier 1602, and it comprises first insulating barrier 1604 successively, the metal level 1606 and second insulating barrier 1608.By use the external voltage (not shown) on metal level 1606, the global shape that can be with of collector barrier 1602 can be adjusted to the shape of expectation.If the technology of the thin metal of this use is applied to the normal direction of conducting direction, can further increase control to potential barrier conduction band shape.Therefore, it is illustrative, and not restrictive that present embodiment should be considered to, and the present invention is not limited in details given herein, but can make amendment within the scope of the appended claims.
Summarize roughly, the invention discloses following this hot electron transistor, it comprises emitter, base stage, and collector electrode, and place between emitter and the base stage and be used as first tunneling structure of the electron propagation ducts between the two.First tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, makes electric transmission comprise to utilize the transmission of tunnelling.This transistor further comprises second tunneling structure that places between base stage and the collector electrode.Second tunneling structure makes described a part of electronics be collected at described collector electrode as the transmission channel of passing through at least a portion electronics that ballistic transport is launched between aforesaid base stage and the collector electrode.The invention also discloses and in thin-film transistor, reduce the correlation technique of electron reflection at the interface.
The invention discloses a kind of hot electron transistor that receives at least a input signal that is applicable to further rough the summary, and described transistor comprises: emitter; Base stage, itself and described emitter branch are arranged, and make the described input signal of at least a portion be applied to emitter and base stage, and cause electronics to be launched to base stage from emitter; First tunneling structure, it places between emitter and the base stage, and be configured as the electron propagation ducts between described emitter and base stage, first tunneling structure comprises the first amorphous insulating barrier at least, makes electron propagation ducts comprise the transmission that utilizes tunnelling at least in part; Collector electrode, itself and described base stage branch are arranged; With second tunneling structure, it places between base stage and the collector electrode and is configured transmission channel as the described at least a portion electronics that is launched by ballistic transport between base stage and the collector electrode, makes described a part of electronics can be collected at described collector electrode.
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Claims (13)
1. a hot electron transistor is applicable to receive at least a input signal, and this transistor comprises:
Emitter;
Base stage, this base stage and described emitter separate, and make the described input signal of at least a portion be applied to described emitter and described base stage, and electronics is launched towards described base stage from described emitter;
First tunneling structure, this first tunneling structure is placed between described emitter and the described base stage, and be set for electric transmission between described emitter and the described base stage, described first tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, described second insulating barrier is set to directly be close to the described first amorphous insulating barrier, and be set to cooperate with the described first amorphous insulating barrier, make described electric transmission comprise the transmission that utilizes tunnelling at least in part;
Collector electrode, this collector electrode and described base stage separate; With
Second tunneling structure, this second tunneling structure is placed between described base stage and the described collector electrode, and be set between described base stage and described collector electrode transmission from described emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described collector electrode.
2, transistor according to claim 1, is formed by semimetal at least in part by in wherein said base stage and the described collector electrode selected at least one.
3, transistor according to claim 1, is formed by metal silicide at least in part by in wherein said base stage and the described collector electrode selected at least one.
4, transistor according to claim 1, is formed by metal nitride at least in part by in wherein said base stage and the described collector electrode selected at least one.
5, transistor according to claim 1, wherein said second tunneling structure is configured to show thermoelectric subreflexive first value, wherein said second tunneling structure comprises moulding barrier energy band characteristic, and making subreflexive first value of described thermoelectricity be lower than thermoelectric subreflexive second value, subreflexive second value of described thermoelectricity is the value that described second tunneling structure is shown under the situation that does not have moulding barrier energy band characteristic.
6, transistor according to claim 5, wherein said moulding barrier energy band characteristic comprises: the parabola gradient of described second tunneling structure.
7, transistor according to claim 1, wherein said emitter is configured to show given Fermi level, wherein said first tunneling structure is configured to show given conduction band, makes difference between described given conduction band and the described given Fermi level less than 2 electron-volts.
8, a kind of transistor is applicable to receive at least a input signal, and this transistor comprises:
Emitter;
Base stage, this base stage and described emitter separate, and make the described input signal of at least a portion be applied to described emitter and described base stage, and electronics is launched towards described base stage from described emitter;
First tunneling structure, this first tunneling structure is placed between described emitter and the described base stage, and be set for electric transmission between described emitter and the described base stage, described first tunneling structure comprises first amorphous layer at least, makes described electric transmission comprise the transmission that utilizes tunnelling at least in part;
Collector electrode, this collector electrode and described base stage separate; With
Second tunneling structure, this second tunneling structure is placed between described base stage and the described collector electrode, and be set between described base stage and described collector electrode transmission from described emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described collector electrode;
Wherein said second tunneling structure is configured to show thermoelectric subreflexive first value, wherein, described second tunneling structure comprises moulding barrier energy band characteristic, make subreflexive first value of described thermoelectricity be lower than thermoelectric subreflexive second value, subreflexive second value of described thermoelectricity is the value that described second tunneling structure is shown under the situation that does not have moulding barrier energy band characteristic.
9, transistor according to claim 8, wherein said moulding barrier energy band characteristic comprises: the parabola gradient of described second tunneling structure.
10, in hot electron transistor, comprise a plurality of layers, described interlayer limits a plurality of interfaces, ballistic electron transmits at described interlayer, described a plurality of layer comprises the adjacent one another are and juxtaposed ground floor and the second layer at least, between the described ground floor and the described second layer, limit first interface, make the described ballistic electron of at least a portion can be reflected at described first interface, a kind of method that is used for reducing at described at least first interface electron reflection comprises:
Construct described ground floor and select wave function to show first; With
Construct the described second layer and select wave function, make the first of described ballistic electron be reflected at described first interface to show second;
The described first of wherein said ballistic electron is less than the second portion of described ballistic electron, and the second portion of described ballistic electron is not construct the described second layer to show described second part that is reflected at described first interface when selecting wave function.
11, method according to claim 10, the wherein said second layer shows given band structure, and the wherein said structure second layer comprises: make described band structure form gradient with ad hoc fashion.
12, method according to claim 10, the wherein said second layer comprises at least one flat surfaces, the wherein said structure second layer comprises: increase surface texture on a described flat surfaces.
13, a kind of linear amplifier is applicable to receive at least a input signal, and described linear amplifier comprises:
Hot electron transistor, this hot electron transistor comprises:
First emitter;
First base stage, this first base stage and described first emitter separate, and make the first at least of described input signal be applied to described first emitter and described first base stage, and electronics is launched towards described first base stage from described first emitter;
First tunneling structure, this first tunneling structure is placed between described first emitter and described first base stage, and be set for electric transmission between described first emitter and described first base stage, described first tunneling structure comprises the first amorphous insulating barrier and second insulating barrier different with it at least, described second insulating barrier is set to directly be close to the described first amorphous insulating barrier, and be set to cooperate with the described first amorphous insulating barrier, make described electric transmission comprise the transmission that utilizes tunnelling at least in part;
First collector electrode, this first collector electrode and described first base stage separate; With
Second tunneling structure, this second tunneling structure is placed between described first base stage and described first collector electrode, and be set between described first base stage and described first collector electrode transmission from described first emitter by at least a portion electronics that ballistic transport is launched, make described a part of electronics can be collected at described first collector electrode; With
The hot hole transistor, this hot hole transistor comprises:
Second emitter;
Second base stage, this second base stage and described second emitter separate, and make the second portion at least of described input signal be applied to described second emitter and described second base stage, and the hole is launched towards described second base stage from described second emitter;
The 3rd tunneling structure, the 3rd tunneling structure is placed between described second emitter and described second base stage, and be set for hole transport between described second emitter and described second base stage, described the 3rd tunneling structure comprises the 3rd amorphous insulating barrier and four insulating barrier different with it at least, described the 4th insulating barrier is set to directly be close to described the 3rd amorphous insulating barrier, and be set to cooperate with described the 3rd amorphous insulating barrier, make described hole transport comprise the transmission that utilizes tunnelling at least in part;
Second collector electrode, this second collector electrode and described second base stage separate; With
The 4th tunneling structure, the 4th tunneling structure is placed between described second base stage and described second collector electrode, and be set between described second base stage and described second collector electrode transmission from described second emitter by at least a portion hole that ballistic transport is launched, make described a part of hole can be collected at described second collector electrode; With
Wherein, described hot electron transistor and described hot hole transistor are set in the push-pull amplifier architecture.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56570004P | 2004-04-26 | 2004-04-26 | |
| US60/565,700 | 2004-04-26 |
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| Publication Number | Publication Date |
|---|---|
| CN101015066A true CN101015066A (en) | 2007-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200580013289XA Pending CN101015066A (en) | 2004-04-26 | 2005-04-25 | Hot electron transistor |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1743379A2 (en) |
| JP (1) | JP2007535178A (en) |
| KR (1) | KR20070053160A (en) |
| CN (1) | CN101015066A (en) |
| WO (1) | WO2005106927A2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199106A (en) * | 2011-12-23 | 2013-07-10 | Ihp有限责任公司/莱布尼茨创新微电子研究所 | P-type graphene base transistor |
| CN104350623A (en) * | 2012-04-04 | 2015-02-11 | 于利奇研究中心有限公司 | Reproducible step-edge josephson junction |
| CN109564892A (en) * | 2016-07-07 | 2019-04-02 | 非结晶公司 | Amorphous metal hot electron transistor |
| CN113541617A (en) * | 2020-04-21 | 2021-10-22 | 株式会社村田制作所 | Power amplifier, power amplifying circuit, and power amplifying device |
| CN115389891A (en) * | 2022-07-26 | 2022-11-25 | 安庆师范大学 | Method for detecting electrical transport band gap in molecular semiconductor material |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5182775B2 (en) * | 2006-03-22 | 2013-04-17 | 国立大学法人大阪大学 | Transistor element and manufacturing method thereof, electronic device, light emitting element, and display |
| JP6324945B2 (en) | 2012-04-19 | 2018-05-16 | カーネギー−メロン ユニバーシティＣａｒｎｅｇｉｅ−Ｍｅｌｌｏｎ Ｕｎｉｖｅｒｓｉｔｙ | Metal-semiconductor-metal (MSM) heterojunction diodes |
| US9543423B2 (en) | 2012-09-04 | 2017-01-10 | Carnegie Mellon University | Hot-electron transistor having multiple MSM sequences |
| AU2014347256B2 (en) * | 2013-08-27 | 2018-08-09 | Georgia State University Research Foundation, Inc. | Tunable hot-carrier photodetector |
| US9112130B2 (en) * | 2013-11-01 | 2015-08-18 | Samsung Electronics Co., Ltd. | Quantum interference based logic devices including electron monochromator |
| KR102372207B1 (en) | 2017-07-27 | 2022-03-07 | 삼성전자주식회사 | Thin film transistor and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
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2005
- 2005-04-25 JP JP2007510882A patent/JP2007535178A/en active Pending
- 2005-04-25 KR KR1020067023210A patent/KR20070053160A/en not_active Application Discontinuation
- 2005-04-25 WO PCT/US2005/014249 patent/WO2005106927A2/en active Application Filing
- 2005-04-25 CN CNA200580013289XA patent/CN101015066A/en active Pending
- 2005-04-25 EP EP05739776A patent/EP1743379A2/en not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199106A (en) * | 2011-12-23 | 2013-07-10 | Ihp有限责任公司/莱布尼茨创新微电子研究所 | P-type graphene base transistor |
| CN104350623A (en) * | 2012-04-04 | 2015-02-11 | 于利奇研究中心有限公司 | Reproducible step-edge josephson junction |
| CN104350623B (en) * | 2012-04-04 | 2017-02-22 | 于利奇研究中心有限公司 | Assembly with josephson junction and manufacturing method thereof |
| CN109564892A (en) * | 2016-07-07 | 2019-04-02 | 非结晶公司 | Amorphous metal hot electron transistor |
| CN109564892B (en) * | 2016-07-07 | 2023-05-12 | 非结晶公司 | Amorphous metal thermionic transistor |
| CN113541617A (en) * | 2020-04-21 | 2021-10-22 | 株式会社村田制作所 | Power amplifier, power amplifying circuit, and power amplifying device |
| CN113541617B (en) * | 2020-04-21 | 2024-03-22 | 株式会社村田制作所 | Power amplifier, power amplifying circuit, and power amplifying apparatus |
| CN115389891A (en) * | 2022-07-26 | 2022-11-25 | 安庆师范大学 | Method for detecting electrical transport band gap in molecular semiconductor material |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1743379A2 (en) | 2007-01-17 |
| WO2005106927A2 (en) | 2005-11-10 |
| JP2007535178A (en) | 2007-11-29 |
| KR20070053160A (en) | 2007-05-23 |
| WO2005106927A3 (en) | 2005-12-29 |
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