CN101008689A - Cleaning method of optical film - Google Patents

Cleaning method of optical film Download PDF

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Publication number
CN101008689A
CN101008689A CN 200610006087 CN200610006087A CN101008689A CN 101008689 A CN101008689 A CN 101008689A CN 200610006087 CN200610006087 CN 200610006087 CN 200610006087 A CN200610006087 A CN 200610006087A CN 101008689 A CN101008689 A CN 101008689A
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China
Prior art keywords
cleaning method
water
blooming
organic solvent
washing process
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CN 200610006087
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Chinese (zh)
Inventor
杨昆炫
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BenQ Materials Corp
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Daxon Technology Inc
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Priority to CN 200610006087 priority Critical patent/CN101008689A/en
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Abstract

This invention relates to one clear method to process optical film, which comprises the following steps: processing first water clearing for optical film through alkalization process; processing second water clearing composed of at least one organic agent then to clear again optical film; removing water on the optical film.

Description

Cleaning method of optical film
Technical field
The present invention relates to a kind of cleaning method of blooming, particularly a kind of in order to clean cleaning method through the blooming of basification.
Background technology
In LCD, polaroid is one of its indispensable main optical module, in order to will originally not have the natural light of polarizability, be transformed into polarized light, therefore LCD just can be utilized this polarized light, add liquid crystal deflecting element characteristic and filter layer, the flux that reaches control light is to present the chrominance signal of different gray scales.
With reference to Fig. 1; the primary structure of polaroid 10 comprises surface protection film 100 as tygon, Triafol T (triacetyl cellulose; be designated hereinafter simply as TAC) film 102,106, polyvinyl alcohol (PVA) (polyvinylalcohol is designated hereinafter simply as PVA) polarization matrix 104, hot melt adhesive layer 108 and stripping film (releasefilm) 110.Wherein, TAC film 102,106 is in order to support and protection PVA polarization matrix 104.In addition, except general surface do not pass through special processing the TAC film, also can stick view film (wide view film) or brightness enhancement film (brightness enhance film) etc. according to each special-purpose, or with liquid crystal molecule coating and crosslinked on the TAC film and form super wide-angle TAC (super wide-view TAC, be designated hereinafter simply as SWV TAC) film and anti-dizzy TAC film (anti-glare, AG TAC) etc.
Generally speaking, the preceding basification that the TAC film fits in before the PVA polarization matrix is one of key element indispensable in the light polarizing film process, and through after the basification, also needs to implement cleaning process, to remove alkali lye and will handle TAC film later and reclaim.With reference to Fig. 2, Fig. 2 is the common TAC film basification and the process flow diagram of cleaning process.As shown in Figure 2, TAC film 20 is positioned in the unreeling machine 200, that then utilizes winder 212 is used for driving TAC film 20, make it make basification through the alkalization groove 202 that contains alkali lye such as potassium hydroxide or NaOH earlier, carry out water-washing process through first rinsing bowl 204 that contains pure water again, to clean the alkali lye on TAC film 20 surfaces.Next TAC film 20 can be difficult for the problem of removing from face to avoid alkali lye, and second rinsing bowl 206 can add sulfuric acid in addition to neutralize remaining alkali lye through second rinsing bowl 206, and therefore second rinsing bowl 206 is called neutralization chamber again.TAC film 20 carries out water-washing process one time again by containing the 3rd rinsing bowl 208 of pure water then, with pure water face is cleaned up.Utilize the moisture oven dry of baking oven 210 at last, and get up to treat subsequent process via winder 212 rollings with TAC film 20 surfaces.
Yet, the dirty problem of some films does not expectedly appear in normal appearance in the common TAC film pre-treatment process, for example because of chemical substance and the dry residual formed small particles of alkali lye such as sodium acetates that basification produced, or because of at a high speed by baking oven the time, not high enough and the water stain or washmarking that stays etc. of oven temperature.
In addition, with reference to Fig. 3, Fig. 3 is the sectional view of SWV TAC film.As shown in Figure 3, SWV TAC film 30 attaches one deck alignment film 304 earlier in the wherein surface of TAC film 302, is coated with thereon and a crosslinked layer of liquid crystal molecule 306 again.Because when carrying out basification, alignment film 304 is easily destroyed by alkali, so layer of liquid crystal molecule 306 must cover alignment film 304 fully, and its embossing is beneficial to the recovery of SWV TAC film 30 in the edge of TAC film 302.Yet layer of liquid crystal molecule 306 is relatively poor with the surface adhesion of TAC film 302 because of its embossing part 308, so be very easy in aforesaid basification and cleaning process, because of the process condition of the pressure of unreeling machine roller or temperature etc., and produce the situation that the liquid crystal molecule of embossing part 308 peels off.So SWV TAC film 30 has problems such as film is dirty except above-mentioned TAC film 302 surfaces take place in meeting, the surface at the layer of liquid crystal molecule 306 of SWV TAC film 30 also has the problem that is easy to attach a large amount of liquid crystal molecules.
For solving the dirty problem of above-mentioned film, common technology provides several different methods, for example increases the temperature or the concentration of neutralization chamber, to reduce the formation of small particles, or the temperature that increases each rinsing bowl reaches more than 35 ℃, uses improve to clean effect and reduce dirty generation of film such as small particles or the like.If yet these methods are when being applied to SWV TAC film, but can increase the quantity that the liquid crystal molecule of its embossing part drops on the contrary.In addition, ℃ can avoid washmarking or water stain generation though improve oven temperature to 95, this method can make the easy embrittlement of TAC film (fragile) again.
Therefore this area is used in the TAC face mostly and pastes the method for diaphragm in addition to stop the problems referred to above fully at present; but this method not only need increase the step that pastes diaphragm; and extra diaphragm produced removes step corresponding to this in the subsequent process; make process complicated; and diaphragm itself also is taken as consumptive material and uses, and more improved production cost.
Summary of the invention
Therefore, fundamental purpose of the present invention is to provide a kind of cleaning method of blooming, in order to cleaning the blooming of crossing through basification, solving the dirty problem of film and to avoid small particles and water stain generation, and can simplify its cleaning process and can promote the usability of industry.
For achieving the above object, the invention provides a kind of cleaning method of blooming, in order to cleaning the blooming that basification is crossed, it comprises and carries out first water-washing process, in order to clean this blooming through basification; Then carry out second water-washing process, this second water-washing process comprises at least a organic solvent, in order to clean this blooming once more; And carry out removal process, residue in moisture on this blooming in order to removal.
According to the method for cleaning blooming provided by the present invention, water-washing process is at room temperature carried out, and more can save in these blooming both sides and stick attaching processes such as diaphragm, and the effect that can reach the simplification process and reduce cost.
Description of drawings
Fig. 1 is the sectional view of polaroid commonly used;
Fig. 2 is the synoptic diagram of common cleaning process;
Fig. 3 is the sectional view of common SWV TAC film;
Fig. 4 is the synoptic diagram of cleaning method provided by the present invention.
The primary clustering symbol description
10 light polarizing film, 100 surface protection films
102 TAC films, 104 PVA polarization matrix
106 TAC films, 108 hot melt adhesive layers
110 stripping films, 20 TAC films
200 unreeling machines, 202 alkalization grooves
204 first rinsing bowls, 206 second rinsing bowls
208 the 3rd rinsing bowls, 210 baking ovens
212 winders, 30 SWV TAC films
302 TAC films, 304 alignment films
306 layer of liquid crystal molecule, 308 embossing parts
40 bloomings, 400 unreeling machines
402 alkalization grooves, 404 first rinsing bowls
406 neutralization chambers, 408 second rinsing bowls
410 baking ovens, 412 winders
Embodiment
With reference to Fig. 4, Fig. 4 is the synoptic diagram of preferred embodiment provided by the present invention.According to the cleaning method of blooming provided by the present invention, it can be applicable to various optical film products, and for example surperficial untreated TAC film, surface attach SWV TAC film, wide viewing angle TAC film, blast TAC film or the anti-dizzy TAC film etc. of liquid crystal molecule.
As shown in Figure 4, blooming 40 is positioned in the unreeling machine 400, then utilize the volume that is used for driving blooming 40 of winder 412 to put action, make it carry out basification through alkalization groove 402 earlier, it is 5~10% potassium hydroxide (KOH) or NaOH alkali lye such as (NaOH) that the groove 402 that wherein alkalizes contains concentration, and temperature is 45~55 ℃ in the groove.Carry out first water-washing process subsequently, first water-washing process is in containing first rinsing bowl 404 of pure water, because first water-washing process is in order to clean the alkali lye that blooming 40 surfaces are brought, adhered to by alkalization groove 402, therefore the required visual actual state of rinsing bowl quantity of first water-washing process is adjusted, and is not limited to the disclosed first single rinsing bowl 404 of present embodiment.In addition, by cleaning institute generation sodium acetate and residual alkali lye through alkalizing after, and the swell-shrink characteristic of minimizing blooming 40, the temperature of first water-washing process is only a little less than the temperature of the groove 402 that alkalizes in the basification, as 30~40 ℃.
Then dirty as the formed small particles of sodium acetate for more effective removal face, cleaning method provided by the present invention also is included in the N-process behind first water-washing process, in the underway and groove 406 of this N-process, and comprise at least a acid solution in the neutralization chamber 406, sulfuric acid for example, and the concentration range of sulfuric acid is less than 4%.
Carry out second water-washing process subsequently again, in order to clean blooming 40 once more.Second water-washing process carries out in second rinsing bowl 408, comprises pure water and at least a organic solvent in it.And this organic solvent can comprise organic solvents such as high-volatile alcohols, ketone or ester class, as methyl alcohol, ethanol, propyl alcohol, isopropyl alcohol, acetone, methyl ethyl ketone or ethyl acetate etc., and is preferred with the isopropyl alcohol; And the concentration of this organic solvent is 1~20%, is preferably 5~6% concentration.
Because the present invention utilizes the polar material material suitable with polarity to attract each other, the principle of " similar dissolving each other " and apolar substance can attract each other with apolar substance, therefore the present invention adds organic solvent at second water-washing process, the characteristic of promptly utilizing organic solvent and water to dissolve each other, and this organic solvent can dissolve each other and can not injure the blooming 40 as TAC film etc. again fully with water, and when being pasted with the blooming 40 of SWV TAC film etc. of liquid crystal molecule in order to clean surface, also can avoid its liquid crystal molecule that drops to be built-up in situation on the SWV TAC face.
Refer again to Fig. 3, as previously mentioned, in common technology, the phenomenon that the layer of liquid crystal molecule 306 that SWV TAC film 30 surfaces attach drops when being easy to basification and cleaning, and the liquid crystal molecule that peels off is attached to the surface of layer of liquid crystal molecule 306, and can not adhere to the surface that opposite side does not attach the TAC film 302 of liquid crystal molecule.And the present invention adds organic solvent when cleaning SWV TAC film 30 in second water-washing process, the contact angle of layer of liquid crystal molecule 306 can be reduced to below 35 degree by 90 original degree, that is to say, the surface of SWV TAC film 30 is because contact angle decline, help the moistening of face, therefore liquid crystal molecule and the layer of liquid crystal molecule 306 that drops can effectively be intercepted by aqueous organopolysiloxane, and be not easy be attached to layer of liquid crystal molecule 306 on, reach the effect of avoiding liquid crystal molecule to be attached to SWV TAC film 30 by this.In addition, because organic solvent contains hydrophobic hydrocarbon atom, it has stronger Van der Waals force with the liquid crystal molecule that drops, and the hydroxy of the possess hydrophilic property of organic solvent own, it easily and water generates hydrogen bond and soluble in water fully, therefore organic solvent has had function as detersive at this, is easy to take away and be easy to be washed by water with liquid crystal molecule that drop with dirty.
With reference to table 1, table 1 is the comparison of cleaning method provided by the present invention and common technology:
Table 1: the comparison of common technology and effect of the present invention
Organic solvent/concentration The liquid crystal particle adheres to number (1330mm*1000mm)
Common technology Do not have 4~6
Embodiment 1 Methyl alcohol/1~20% 2~3
Embodiment 2 Ethanol/1~20% 1~3
Embodiment 3 Propyl alcohol/1~20% 1~3
Embodiment 4 Isopropyl alcohol/1~20% 0~1
Embodiment 5 Acetone/1~20% 1~3
Embodiment 6 Methyl ethyl ketone/1~20% 1~3
Embodiment 7 Ethyl acetate/1~20% 0~3
By the actual metric data of table 1 as can be known, cleaning method provided by the present invention can effectively solve the problem of common technology really.In addition, it should be noted that, owing to can increase the dirty clean ability of film and reduce adhering to of liquid crystal molecule after adding organic solvent, so in an embodiment of the present invention, temperature does not need painstakingly to raise in the neutralization chamber 406 of the N-process and second water-washing process and the groove of second rinsing bowl 408, only needs can reach under room temperature the effect of cleaning.If on SWV TAC film, carry out, also can reduce the liquid crystal molecule number that SWV TAC mould flower part drops again.In addition, the interpolation of organic solvent is not limited to second water-washing process, and also the needs of visual process or special product are considered and selectivity joins in first water-washing process or the N-process for they.
Refer again to Fig. 4, the present invention also provides removal process, makes blooming 40 by baking oven 410.Because of organic solvent has high volatile volatile alcohols, ketone or ester class, can reduce the boiling point of water after dissolving each other with water, can to remove face water stain so baking oven 410 temperature are set in 70~80 ℃, also so more can avoid the too high problem that makes blooming 40 embrittlement of baking oven 410 temperature.Last blooming 40 reclaims via winder 412 again, uses for subsequent process.
In sum, method provided by the present invention, add organic solvent in second water-washing process, the films such as small particles that produce after basification of flush away blooming are dirty by this, and the liquid crystal molecule that also can avoid when being used to clean SWV TAC film peeling off is attached to SWV TAC face.In addition, according to method provided by the present invention, the N-process and second water-washing process can carry out under room temperature, also can reduce the quantity that its liquid crystal molecule peels off at SWV TAC film, and temperature of oven can downgrade 70 ℃ in the removal process, more can avoid blooming because of the overheated embrittlement problem that produces.Therefore the present invention except can effectively remove the blooming surface dirty with the surface attachment liquid crystal molecule, also can simplify the cleaning process of blooming.
The above only is the preferred embodiments of the present invention, and all equal variation and modifications of doing according to claim of the present invention all should belong to the scope that the present invention is contained.

Claims (13)

1. the cleaning method of a blooming in order to clean the blooming of crossing through basification, comprises:
Carry out first water-washing process, in order to clean this blooming through basification;
Carry out second water-washing process, and comprise at least a organic solvent in this second water-washing process, in order to clean this blooming once more; And
Carry out removal process, residue in moisture on this blooming in order to removal.
2. cleaning method as claimed in claim 1, wherein this blooming is a three cellulose acetate membrane.
3. cleaning method as claimed in claim 1, wherein this basification is carried out in the alkalization groove, and this alkalization groove comprises potassium hydroxide solution or sodium hydroxide solution.
4. cleaning method as claimed in claim 1, wherein this first water-washing process carries out at least the first rinsing bowl, and this first rinsing bowl comprises pure water.
5. cleaning method as claimed in claim 4, wherein this first rinsing bowl more comprises at least a organic solvent.
6. cleaning method as claimed in claim 1 also comprises N-process, carries out behind this first water-washing process.
7. cleaning method as claimed in claim 6, wherein this N-process carries out in neutralization chamber, and this neutralization chamber comprises at least a acid solution.
8. cleaning method as claimed in claim 7, wherein this acid solution comprises sulfuric acid.
9. cleaning method as claimed in claim 7, wherein this neutralization chamber also comprises at least a organic solvent.
10. cleaning method as claimed in claim 1, wherein this second water-washing process carries out in second rinsing bowl, and this second rinsing bowl comprises pure water.
11. as claim 1,5,9 described cleaning methods, wherein the concentration range of this organic solvent is 1%~20%.
12. as claim 1,5,9 described cleaning methods, wherein this organic solvent comprises organic solvents such as high-volatile alcohols, ketone or ester class.
13. cleaning method as claimed in claim 12, wherein this organic solvent comprises methyl alcohol, ethanol, propyl alcohol, isopropyl alcohol, acetone, methyl ethyl ketone or ethyl acetate.
CN 200610006087 2006-01-26 2006-01-26 Cleaning method of optical film Pending CN101008689A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101712033B (en) * 2008-09-30 2013-04-03 株式会社日立工业设备技术 A membrane washing system
CN103028582A (en) * 2011-09-30 2013-04-10 武藏野机械有限公司 Water removing system of film workpiece
CN105745562A (en) * 2013-11-22 2016-07-06 住友化学株式会社 Method for manufacturing polarizing film
CN106863828A (en) * 2017-01-06 2017-06-20 芜湖华瀚光电有限公司 A kind of polaroid original piece production stretching combination process
CN107065055A (en) * 2017-01-06 2017-08-18 芜湖华瀚光电有限公司 A kind of polaroid and its production technology
CN108905636A (en) * 2018-06-04 2018-11-30 苏州名列膜材料有限公司 Polytetrafluoroethylcomposite composite micro porous film and preparation method thereof and preparation system
CN114908354A (en) * 2022-04-19 2022-08-16 宁波金田铜业(集团)股份有限公司 Surface treatment method of soft brass wire

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101712033B (en) * 2008-09-30 2013-04-03 株式会社日立工业设备技术 A membrane washing system
CN103028582A (en) * 2011-09-30 2013-04-10 武藏野机械有限公司 Water removing system of film workpiece
CN105745562A (en) * 2013-11-22 2016-07-06 住友化学株式会社 Method for manufacturing polarizing film
CN105745562B (en) * 2013-11-22 2018-09-04 住友化学株式会社 The manufacturing method of light polarizing film
CN106863828A (en) * 2017-01-06 2017-06-20 芜湖华瀚光电有限公司 A kind of polaroid original piece production stretching combination process
CN107065055A (en) * 2017-01-06 2017-08-18 芜湖华瀚光电有限公司 A kind of polaroid and its production technology
CN108905636A (en) * 2018-06-04 2018-11-30 苏州名列膜材料有限公司 Polytetrafluoroethylcomposite composite micro porous film and preparation method thereof and preparation system
CN114908354A (en) * 2022-04-19 2022-08-16 宁波金田铜业(集团)股份有限公司 Surface treatment method of soft brass wire
CN114908354B (en) * 2022-04-19 2024-02-09 宁波金田铜业(集团)股份有限公司 Surface treatment method for soft brass wire

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