CN101004550A - Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire - Google Patents
Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire Download PDFInfo
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- CN101004550A CN101004550A CNA2006100050608A CN200610005060A CN101004550A CN 101004550 A CN101004550 A CN 101004550A CN A2006100050608 A CNA2006100050608 A CN A2006100050608A CN 200610005060 A CN200610005060 A CN 200610005060A CN 101004550 A CN101004550 A CN 101004550A
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Abstract
An optical-adjacent calibrating method includes providing a light mask pattern with linear pattern being configured in mode of end to end, carrying out preliminary calibration to add a tail end pattern to each two ends of each linear pattern, carrying out a micro-regulation calibration to revise each linear pattern and tail end pattern, using an asymmetric pattern as tail end pattern and using mirror image symmetric mode to arrange adjacent two tail end patterns between adjacent two linear patterns.
Description
Technical field
The present invention relates to a kind of optical near-correction method, optical near-correction optical mask and conductor structure, relate in particular to a kind of optical near-correction method that can promote process margin and optical near-correction optical mask according to its manufacturing, and the conductor structure that uses this photomask gained.
Background technology
Under the more and more high situation of the requirement of circuit integration, the size of each circuit component is also constantly dwindled.And in the whole semiconductor technology, to one of the most very important step of size downsizing photoetching (photolithography) step of can saying so.
In addition, whether other various semiconductor technologies can continue toward littler characteristic dimension (criticaldimension; CD) advance, also be decided by the development of photoetching process technology.Because the degree of accuracy of optical patterning can directly have influence on the yield of product, for head it off, some methods that improve the photomask resolution are constantly put forward, for example optical near-correction method (optical proximity correction; OPC).
Yet, when the terminal spacing of adjacent two linear pattern of arranging in end-to-end (end-to-end) mode is too small, use previous OPC method that the problem of pattern misconnection is arranged easily.Just because of this, industry needs new OPC method, with further lifting photomask resolution and process margin (processwindow).
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of optical near-correction method, can effectively improve the problem of adjacent two linear pattern misconnections.
Another object of the present invention provides a kind of optical near-correction optical mask, and it is made according to optical near-correction method of the present invention and obtains.
A further object of the present invention provides a kind of conductor structure, and it is to utilize optical near-correction optical mask of the present invention formed, and can effectively avoid short circuit and increase process margin.
A kind of optical near-correction method that the present invention proposes is as follows.One optical mask pattern at first is provided, and this optical mask pattern comprises a plurality of with end-to-end (the end to end) linear pattern that mode disposes, and wherein each linear pattern extends the directions X of a plane coordinates, and the width on the Y direction is W.Then, carry out one and tentatively proofread and correct, so that each adds an end pattern in each linear pattern two end, it comprises first pattern and second pattern.Wherein, first pattern is in close proximity to the end of corresponding linear pattern, and the breadth extreme of this first pattern on the Y direction is W1, and starts at from the linear pattern end of correspondence, and its maximum length on directions X is L1.Second pattern is in close proximity to the end and first pattern of corresponding linear pattern, and the breadth extreme of this second pattern on the Y direction is W2, and starts at from the linear pattern end of correspondence, and its maximum length on directions X is L2.Wherein, W1+W2＞W, and L1＞L2.Then, carry out a fine setting and proofread and correct, to revise each linear pattern and end pattern.
Described according to a preferred embodiment of the present invention, in above-mentioned optical near-correction method, two end pattern between the adjacent two wire patterns are to arrange with mirror image symmetry or point-symmetric mode.Above-mentioned fine setting is proofreaied and correct and is comprised that then the edge (line edge) and the edge of each end pattern to each linear pattern revise.
A kind of optical near-correction optical mask that the present invention proposes comprises a substrate, a plurality of linear pattern and a plurality of end pattern.Wherein, linear pattern is disposed on the substrate, and is configured with end to end system; Each linear pattern extends the directions X of a plane coordinates, and the width on the Y direction is W.End pattern is disposed on the substrate, and is positioned at an end of a linear pattern separately, comprises first pattern and second pattern.Wherein, first pattern is in close proximity to the end of corresponding linear pattern, and the breadth extreme on this first pattern Y direction is W1, and starts at from the linear pattern end of correspondence, and its maximum length on directions X is L1.Second pattern is in close proximity to the end and first pattern of corresponding linear pattern, and the breadth extreme of this second pattern on the Y direction is W2, and starts at from the linear pattern end of correspondence, and its maximum length on directions X is L2.Wherein, W1+W2＞W, and L1＞L2.
Described according to a preferred embodiment of the present invention, in above-mentioned optical near-correction optical mask, two end pattern between adjacent two linear pattern are to arrange with mirror image symmetry or point-symmetric mode.
A kind of conductor structure that the present invention proposes is applicable in the semiconductor element, comprises first lead and second lead.Wherein, first lead comprise the directions X that extends a plane coordinates the first wire main part, be connected in an end of the first wire main part and to first end portion of Y direction deflection, and be connected in the other end of the first wire main part and to second end portion of Y direction deflection.Second lead is disposed at a side of first lead with end to end system, comprise the second wire main part that extends directions X, an end that is connected in the second wire main part and to the three-termination part of Y direction deflection, and be connected in the other end of the second wire main part and to the 4th end portion of Y direction deflection.Wherein, second end portion is adjacent with the three-termination part.
Described according to a preferred embodiment of the present invention, in above-mentioned conductor structure, first end portion and second end portion be to the deflection of positive Y direction, and three-termination part and the 4th end portion are to negative Y direction deflection.
Described according to another preferred embodiment of the present invention, in above-mentioned conductor structure, first end portion and second end portion be to the deflection of positive Y direction, and three-termination part and the 4th end portion are also to the deflection of positive Y direction.
Described according to another preferred embodiment of the present invention, in above-mentioned conductor structure, first end portion and three-termination part is to the deflection of positive Y direction, and second end portion and the 4th end portion are to negative Y direction deflection.
Described according to a preferred embodiment more of the present invention, in above-mentioned conductor structure, first end portion and the 4th end portion be to the deflection of positive Y direction, and second end portion and three-termination part are to negative Y direction deflection.
Described according to a preferred embodiment more of the present invention, in above-mentioned conductor structure, first end portion, second end portion and the 4th end portion are all to the deflection of positive Y direction, and the three-termination part is to negative Y direction deflection.
Described according to another preferred embodiment of the present invention, in above-mentioned conductor structure, first end portion, second end portion and three-termination part are all to the deflection of positive Y direction, and the 4th end portion is to negative Y direction deflection.
Described according to another preferred embodiment of the present invention, in above-mentioned conductor structure, the material of first lead and second lead comprises metal.
Described according to another preferred embodiment of the present invention, in above-mentioned conductor structure, metal is copper, aluminium or tungsten.
In addition, in above-mentioned conductor structure, the material of first lead and second lead can comprise doped polycrystalline silicon.Moreover the aforesaid semiconductor element can comprise static RAM (SRAM) element.
As mentioned above, because optical near-correction method of the present invention is modified to asymmetric shape with the end of linear pattern, so make photomask at correction result according to this method, and when in photoetching process, using this photomask definition linear pattern, the terminal part branch of each linear pattern is towards vertical direction deflection, and can effectively prevent the problem of adjacent linear pattern misconnection, and can promote the nargin of photoetching process.
Moreover, when the defined linear pattern of above-mentioned photoetching process is conductor structure, because its misconnection can effectively be prevented, so can avoid the phenomenon of short circuit to take place.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A, 1B and 1D are for carrying out the synoptic diagram of optical near-correction according to one embodiment of the invention to optical mask pattern, and Fig. 1 C then illustrates the arrangement mode of another embodiment center line end pattern;
Fig. 2 is the synoptic diagram according to the optical near-correction optical mask that one embodiment of the invention illustrated;
Fig. 3 is the synoptic diagram according to the optical near-correction optical mask that another embodiment of the present invention illustrated;
Fig. 4～Fig. 9 is the synoptic diagram of the conductor structure that illustrated according to the various different embodiment of the present invention.
The main element symbol description
100: optical mask pattern
102,102 ', 202: linear pattern
104,104 ', 106,204: end pattern
104a, 106a, 204a, 206a: first pattern
104b, 106b, 204b, 206b: second pattern
108,208: datum line
200: substrate
400: Semiconductor substrate
402: the first leads
404: the first wire main parts
406: the first end portion
408: the second end portion
412: the second leads
414: the second wire main parts
416: the three-termination parts
418: the four end portion
Embodiment
Figure 1A, 1B and 1D illustrate according to one embodiment of the invention optical mask pattern are carried out the step of optical near-correction, and Fig. 1 C then illustrates the arrangement mode of end pattern among another embodiment.
At first, please at first provide an optical mask pattern 100 earlier with reference to Figure 1A, this optical mask pattern 100 comprises linear pattern 102, and it is to dispose in end-to-end (end to end) mode.Each linear pattern 102 extends the directions X of a plane coordinates, and its width on the Y direction is W.
Then, please refer to Figure 1B, carry out one and tentatively proofread and correct, each additional end pattern 104 in the two ends of each linear pattern 102.Each end pattern 104 comprises the first pattern 104a and the second pattern 104b.Wherein, the first pattern 104a is in close proximity to the end of corresponding linear pattern 102, and the breadth extreme on the Y direction is W1, and starts at from the end of the linear pattern 102 of correspondence, and the maximum length of the first pattern 104a on directions X is L1.
On the other hand, the second pattern 104b is in close proximity to the end and the aforementioned first pattern 104a of corresponding linear pattern 102, its breadth extreme on the Y direction is W2, and starts at from linear pattern 102 ends of correspondence, and the maximum length of the second pattern 104b on directions X is L2.Wherein, W1+W2＞W, and L1＞L2.
In the present embodiment, two end pattern 104 between adjacent two linear pattern 102 are to arrange in point-symmetric mode, that is to say that the translation on directions X again behind Rotate 180 degree on the XY plane of one of them end pattern 104 can overlap with another end pattern 104.Yet, please refer to Fig. 1 C, in another embodiment, between adjacent two linear pattern 102, two end pattern 106 that each the free first pattern 106a and the second pattern 106b form, be that a datum line 108 with Y direction between this two end pattern 106 is as the criterion, mirror image each other, promptly this two end pattern 106 is to arrange with the mirror image symmetrical manner.
In the above-described embodiments, though the pattern of the first pattern 104a, 106a and the second pattern 104b, 106b is a rectangle, but the present invention is not limited to this, and it for example can be to be added asymmetrical distortion and got the person by the normal ornamental thread (serifs) that uses, tup (hammer head), right angle concavo-convex (jog) etc. or its combination pattern in the general OPC method.
Then, please refer to Fig. 1 D, linear pattern 102 and end pattern 104 are carried out a fine setting correction, it for example is to use general OPC computing machine formula that linear pattern 102 edges and end pattern 104 edges are revised, and obtain revised linear pattern 102 ' and end pattern 104 ', with the live width of control linear pattern 102.
Next, with the optical near-correction optical mask of introducing according to the correction result made of optical near-correction method of the present invention.
Fig. 2 is the synoptic diagram according to the optical near-correction optical mask that one embodiment of the invention illustrated.Fig. 3 is the synoptic diagram according to the optical near-correction optical mask that another embodiment of the present invention illustrated.
Please refer to Fig. 2, the optical near-correction optical mask of one embodiment of the invention comprise substrate 200 and on linear pattern 202 and end pattern 204, the latter two constitute an optical mask pattern, are used to define pattern in the photoetching process.The material of aforesaid substrate 200 for example is a clear glass.
Wherein, each linear pattern 202 is configured on substrate 200 with end to end system, and wherein each linear pattern 202 extends the directions X of a plane coordinates, and the width on the Y direction is W.
In above-mentioned optical near-correction optical mask, two end pattern 204 between the adjacent two wire patterns 202 are to arrange in point-symmetric mode, that is to say that a wherein end pattern 204 translation on directions X again behind Rotate 180 degree on the XY plane can overlap with another end pattern 204.Yet, please refer to Fig. 3, in the optical near-correction optical mask of another embodiment, two end pattern 206 that each the free first pattern 206a and the second pattern 206b are formed between the adjacent two wire patterns 202, be to be as the criterion with a datum line 208 of Y direction therebetween, mirror image each other, that is this two wire pattern 202 is to arrange with the mirror image symmetrical manner.
Wherein, linear pattern 202, end pattern 204 and end pattern 206 can be lightproof part (material for example is a chromium) or light transmission part, and work in coordination with photoresist character (positive photoresist or negative photoresist), this is well known to those skilled in the art, and repeats no more in this.
Because the end pattern 204 in the above-mentioned optical near-correction optical mask is an asymmetric pattern, thus can be with the end of its formed linear pattern towards vertical (Y) direction deflection, and can prevent pattern misconnection problem, and the nargin of lifting photoetching process.
Below, introduction is utilized the formed wire pattern of optical near-correction optical mask proposed by the invention.
Fig. 4～Fig. 9 is the synoptic diagram of the conductor structure that illustrated according to the various different embodiment of the present invention.
At first, please refer to Fig. 4, the conductor structure of various embodiments of the present invention is applicable in the semiconductor element, for example is static RAM component, and the grid of the MOS transistor of its basic comprising unit forms many short-term shape patterns of end-to-end arrangement usually.This kind conductor structure comprises first lead 402 and second lead 412 that is disposed on the semi-conductive substrate 400, and the material of the two for example is metals such as doped polycrystalline silicon or copper, aluminium, tungsten.
Wherein, first lead 402 comprises the first wire main part 404, first end portion 406 and second end portion 408.The first wire main part 404 extends the directions X of a plane coordinates.First end portion 406 is connected in an end of the first wire main part 404, and to the deflection of Y direction, for example is positive Y direction.Second end portion 408 is connected in the other end of the first wire main part 404, and to the deflection of Y direction, for example is negative Y direction.
Because arbitrary end portion of first lead 402 and second lead 412 all can be to positive Y direction or the deflection of negative Y direction, so except the conductor structure of Fig. 4, the conductor structure of multiple different permutation and combination is arranged still, it will be in hereinafter describing with Fig. 5～Fig. 9.
Please refer to Fig. 5, in the present embodiment, first end portion 406 and second end portion 408 be to the deflection of positive Y direction, and three-termination part 416 and the 4th end portion 418 are to negative Y direction deflection.
Please refer to Fig. 6, in the present embodiment, first end portion 406 and second end portion 408 be to the deflection of positive Y direction, and three-termination part 416 and the 4th end portion 418 are also to the deflection of positive Y direction.
Please refer to Fig. 7, in the present embodiment, first end portion 406 and the 4th end portion 418 be to the deflection of positive Y direction, and second end portion 408 and three-termination part 416 are to negative Y direction deflection.
Please refer to Fig. 8, in the present embodiment, first end portion 406, second end portion 408 and the 4th end portion 418 are to the deflection of positive Y direction, and three-termination part 416 is to negative Y direction deflection.
Please refer to Fig. 9, in the present embodiment, first end portion 406, second end portion 408 and three-termination part 416 are to the deflection of positive Y direction, and the 4th end portion 418 is to negative Y direction deflection.
What deserves to be mentioned is, the conductor structure among above-mentioned Fig. 4～Fig. 9, also in the structure applicable to intensive line (denselines), it for example is that the conductor structure with Fig. 4～Fig. 9 is a least unit, carry out repeated configuration and the person.
Above-mentioned conductor structure is because the deflection of its end portion can effectively avoid the phenomenon of short circuit to take place.In addition, the process margin in its manufacture process also can increase because of the deflection of wire end.
In sum, the present invention has following advantage at least:
1. because optical near-correction method proposed by the invention is that the linear pattern end is modified to asymmetric shape, so make photomask at correction result according to this method, and when in photoetching process, using this photomask definition linear pattern, the end portion of each linear pattern can be towards vertical direction deflection, and can effectively prevent the problem of adjacent linear pattern misconnection, and can promote the nargin of photoetching process.
2. making photomask with OPC method proposed by the invention, and when using this photomask to make conductor structure of the present invention, because of the end portion of each lead has deflection, so can effectively avoid the phenomenon generation of short circuit.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (18)
1. optical near-correction method comprises:
One optical mask pattern is provided, and this optical mask pattern comprises a plurality of linear pattern, is to be configured with end to end system, and respectively this linear pattern extends the directions X of a plane coordinates, and the width on the Y direction is W;
Carry out one and tentatively proofread and correct, in each additional end pattern of these linear pattern two ends respectively, respectively this end pattern comprises:
One first pattern is in close proximity to the end of corresponding linear pattern, and the breadth extreme of this first pattern on the Y direction is W1, and starts at from this linear pattern end, and the maximum length of this first pattern on directions X is L1; And
One second pattern is in close proximity to end and this first pattern of this linear pattern, and the breadth extreme of this second pattern on the Y direction is W2, and starts at from this linear pattern end, and the maximum length of this second pattern on directions X is L2,
Wherein, W1+W2＞W, and L1＞L2; And
Carry out a fine setting and proofread and correct, to revise those linear patterns and those end pattern.
2. optical near-correction method as claimed in claim 1, two these end pattern between wherein adjacent two these linear pattern are to arrange with the mirror image symmetrical manner.
3. optical near-correction method as claimed in claim 1, two these end pattern between wherein adjacent two these linear pattern are to arrange in point-symmetric mode.
4. optical near-correction method as claimed in claim 1, wherein this fine setting is proofreaied and correct and is comprised edge and those end pattern edges of those linear patterns are revised.
5. optical near-correction optical mask comprises:
One substrate,
A plurality of linear pattern are disposed on this substrate, and with the end to end system configuration, respectively this linear pattern extends the directions X of a plane coordinates, and the width on the Y direction is W; And
A plurality of end pattern are disposed on this substrate, and wherein arbitrary end pattern is positioned at an end of a linear pattern, comprising:
One first pattern is in close proximity to this linear pattern end, and the breadth extreme of this first pattern on the Y direction is W1, and starts at from this linear pattern end, and the maximum length of this first pattern on directions X is L1; And
One second pattern is in close proximity to terminal and this first pattern of this linear pattern, and the breadth extreme of this second pattern on the Y direction is W2, and starts at from this linear pattern end, and the maximum length of this second pattern on directions X is L2,
Wherein, W1+W2＞W, and L1＞L2.
6. optical near-correction optical mask as claimed in claim 5, two these end pattern between wherein adjacent two these linear pattern are to arrange with the mirror image symmetrical manner.
7. optical near-correction optical mask as claimed in claim 5, two these end pattern between wherein adjacent two these linear pattern are to arrange in point-symmetric mode.
8. conductor structure is applicable to comprise in the semiconductor element:
One first lead comprises:
One first wire main part extends the directions X of a plane coordinates;
One first end portion is connected in an end of this first wire main part, and to the deflection of the Y of this plane coordinates direction; And
One second end portion is connected in the other end of this first wire main part, and to the deflection of Y direction; And
One second lead, it is a side that is disposed at this first lead with end to end system, comprising:
One second wire main part extends directions X;
One three-termination part is connected in an end of this second wire main part, and to the deflection of Y direction; And
One the 4th end portion is connected in the other end of this second wire main part, and to the deflection of Y direction,
Wherein, this second end portion is adjacent with this three-termination part.
9. conductor structure as claimed in claim 8, wherein this first end portion and this second end portion be to the deflection of positive Y direction, and this three-termination part and the 4th end portion are to negative Y direction deflection.
10. conductor structure as claimed in claim 8, wherein this first end portion and this second end portion be to the deflection of positive Y direction, and this three-termination part and the 4th end portion are also to the deflection of positive Y direction.
11. conductor structure as claimed in claim 8, wherein this first end portion and this three-termination part is to the deflection of positive Y direction, and this second end portion and the 4th end portion are to negative Y direction deflection.
12. conductor structure as claimed in claim 8, wherein this first end portion and the 4th end portion be to the deflection of positive Y direction, and this second end portion and this three-termination part are to negative Y direction deflection.
13. conductor structure as claimed in claim 8, wherein this first end portion, this second end portion and the 4th end portion be all to the deflection of positive Y direction, and this three-termination part is to negative Y direction deflection.
14. conductor structure as claimed in claim 8, wherein this first end portion, this second end portion and this three-termination part is all to the deflection of positive Y direction, and the 4th end portion is to negative Y direction deflection.
15. conductor structure as claimed in claim 8, wherein the material of this first lead and this second lead comprises doped polycrystalline silicon.
16. conductor structure as claimed in claim 8, wherein the material of this first lead and this second lead comprises a metal.
17. conductor structure as claimed in claim 16, wherein this metal is copper, aluminium or tungsten.
18. conductor structure as claimed in claim 8, wherein this semiconductor element comprises static RAM component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100050608A CN101004550A (en) | 2006-01-17 | 2006-01-17 | Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006100050608A CN101004550A (en) | 2006-01-17 | 2006-01-17 | Optical vicinity correction method, optical mask of optical vicinity correction, and structure of conducting wire |
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| CN101004550A true CN101004550A (en) | 2007-07-25 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101727516A (en) * | 2008-10-31 | 2010-06-09 | 新思科技有限公司 | Assist feature placement based on a focus-sensitive cost-covariance field |
| CN101359178B (en) * | 2007-08-03 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN104749872A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask template graph |
| CN106033482A (en) * | 2015-03-18 | 2016-10-19 | 联华电子股份有限公司 | Method for producing layout patterns |
| CN109872990A (en) * | 2017-12-01 | 2019-06-11 | 三星电子株式会社 | Semiconductor device and its manufacturing method |
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2006
- 2006-01-17 CN CNA2006100050608A patent/CN101004550A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101359178B (en) * | 2007-08-03 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN101727516A (en) * | 2008-10-31 | 2010-06-09 | 新思科技有限公司 | Assist feature placement based on a focus-sensitive cost-covariance field |
| CN104749872A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Method for forming mask template graph |
| CN104749872B (en) * | 2013-12-27 | 2019-07-02 | 中芯国际集成电路制造(上海)有限公司 | The method for forming mask plate figure |
| CN106033482A (en) * | 2015-03-18 | 2016-10-19 | 联华电子股份有限公司 | Method for producing layout patterns |
| CN106033482B (en) * | 2015-03-18 | 2021-03-16 | 联华电子股份有限公司 | Method for generating layout pattern |
| CN109872990A (en) * | 2017-12-01 | 2019-06-11 | 三星电子株式会社 | Semiconductor device and its manufacturing method |
| CN109872990B (en) * | 2017-12-01 | 2023-10-10 | 三星电子株式会社 | Semiconductor device and method for manufacturing the same |
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Open date: 20070725 |