CN101004532A - Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier - Google Patents

Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier Download PDF

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CN101004532A
CN101004532A CNA2006101255889A CN200610125588A CN101004532A CN 101004532 A CN101004532 A CN 101004532A CN A2006101255889 A CNA2006101255889 A CN A2006101255889A CN 200610125588 A CN200610125588 A CN 200610125588A CN 101004532 A CN101004532 A CN 101004532A
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bundle
optical amplifier
based optical
concentration range
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CN100440020C (en
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周治平
汪毅
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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Abstract

A light amplifier of silicon base is prepared for connecting two ends of gain media separately to light source unit and detection system through polarization preserving fiber. The method for preparing said gain media includes sputtering a layer of gild foil on Si based substrate, growing a layer of photo-resist periodically in interval mode on surface of gold foil, vertically etching gold foil uncovered by photo-resist then starting up atom layer depositing unit to grow Si (Er) layer and Si layer alternatively.

Description

The preparation method of a kind of micro Nano silicon based optical amplifier and this Amplifier Gain medium
Technical field
The present invention relates to a kind of silicon based optical amplifier, particularly relate to a kind of silicon based optical amplifier by the surface plasma enhancement effect.
Background technology
Become a research focus in physics, chemistry, biology and the material science at present based on the material of surface plasma enhancement effect and device.Up to now, application surface plasma enhancement effect can improve micro/nano-scale quantum dot (as CdSe, the Si quantum dot, InGaN), rare metal (as erbium ion) and organic material (as dyestuff, luminescence efficiency PMMA).Wherein, possessing representational most is organic light emitting diode device (OLED), and by the coupling of organic material and surface plasma, luminescence efficiency increases exponentially, and becomes the optimal candidate of novel luminous and display device.
Improved constantly along with the rate of information throughput in recent years and human growing to information requirement, traditional electrical transmission pattern can not be carried growing data volume, adopts all optical communication to become developing tendency in future.But silicon (Si) sill makes that in communication wavelengths (1.55 μ m) transparent characteristic the luminescence efficiency of silica-base material is very low, and the er-doped silica-base material makes luminescence efficiency still very low because non-radiative process exists.In the recent period, Si (the Er)/Si sandwich construction that grows by distillation molecular beam epitaxy (SMBE) demonstrates good spectral characteristic, and it has remarkable enhancing in 1.55 mum wavelength place spectral intensities; This spectral width is very narrow simultaneously, shows that this structure possesses lasing characteristic.Yet, the gain coefficient of Si (Er)/Si sandwich construction is decided by the spontaneous radiation coefficient of spectrum, only be difficult to effectively change gain coefficient by regulating Si (Er)/Si sandwich construction parameter, make the net gain coefficient of Si (Er)/Si sandwich construction to improve significantly, thereby restricted Si (the Er)/application of Si sandwich construction in silicon based optical amplifier.
Summary of the invention
At the problem that Si in the silicon based optical amplifier (Er)/Si sandwich construction gain coefficient can't significantly improve, the present invention proposes the preparation method of a kind of micro Nano silicon based optical amplifier and this Amplifier Gain medium, it adopts additional layer of metal optical grating construction effectively to regulate and control the gain coefficient of Si (Er)/Si sandwich construction, thereby improves the net gain of this silicon based optical amplifier significantly; This preparation method's technology is simple, function admirable.
A kind of micro Nano silicon based optical amplifier of the present invention, comprise the Lights section, gain media 2 and detection system, the two ends of gain media 2 are connected with detection system with the Lights section by polarization maintaining optical fibre respectively, described gain media 2 comprises: multilayer Si (Er)/Si structural sheet 2-1, and it is in the top of described gain media 2; Metal grating layer 2-2, the material of metal grating layer 2-2 is a metallic gold, the thickness T of this layer is 7nm～15nm; The upper surface of described metal grating layer 2-2 is disposed with several grooves and projection periodically, the depth D of this groove is 4nm～8nm, this protruding width W is 20nm～45nm, this periodic width P is 40nm～90nm, it is in multilayer Si (Er)/Si structural sheet 2-1 below, and described high spot is in multilayer Si (Er)/Si structural sheet 2-1; With Si base substrate 2-3, it is in the below of metal grating layer 2-2.
In use, when incident light irradiation during at multilayer Si of the present invention (Er)/Si structure, erbium ion is excited; The erbium ion that is excited will provide energy to cause the surface plasma of metal material surface.Then, by metal grating structure, surface plasma is coupled and shines multilayer Si (Er)/Si structure and finally be transmitted into far-end.Because introduce the low-loss surface plasma characteristics, the spontaneous radiation coefficient of erbium ion will be regulated and control by surface plasma, corresponding gain coefficient also will change, and this micro Nano silicon based optical amplifier net gain also will significantly improve.
The preparation method of Amplifier Gain medium of the present invention, carry out according to following step:
Sputter layer of metal goldleaf on Si base substrate, the span of its thickness T is 7nm～15nm;
At goldleaf surface periodic compartment of terrain growth one deck photoresist photo resistor, the photoresist layer width W is 20nm～45nm, and this periodic width P is 40nm～90nm;
Utilize reactive ion etching method reactive ion etch, with the vertical etching of goldleaf that is not covered by photoresist, the depth D of its etched recesses is 4nm～8nm;
The substrate that is carved with metal grating is put into atomic layer deposition apparatus, at first open silicon atom bundle and erbium ion bundle, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3, the deposit thickness scope of Si (Er) layer is 1nm～20nm; Close the erbium ion bundle then, the deposit thickness that continues depositing silicon atom and Si layer is 1nm～40nm; Then close the silicon atom bundle; Adopt chemical Mechanical Polishing Technique, Si (Er) layer and the polishing of Si layer that the non-groove gold surface of metal grating is deposited polish, and Si (Er) layer and the consistency of thickness of Si layer making it to fill up with groove;
Again open atomic layer deposition apparatus, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3, setting Si (Er) layer thickness scope is that 1nm～20nm and Si layer thickness scope are 1nm～40nm, alternating growth Si (Er) layer and Si layer, and multilayer Si (Er)/Si structural sheet growth thickness scope is 200nm～5 μ m; So far, make the gain media layer of micro Nano silicon based optical amplifier.
Description of drawings
Fig. 1 is the structural representation of amplifier of the present invention, and Fig. 2 is the cross-sectional view of gain media 2, and Fig. 3 is the A-A sectional view of Fig. 2.
Embodiment
Below in conjunction with accompanying drawing, micro Nano silicon based optical amplifier of the present invention is further described.
As shown in Figure 1, micro Nano silicon based optical amplifier comprises the Lights section, gain media 2 and detection system, and the two ends of gain media 2 are connected with detection system with the Lights section by polarization maintaining optical fibre respectively,
As Fig. 2, shown in Figure 3, described gain media 2 comprises:
Multilayer Si (Er)/Si structural sheet 2-1, it is in the top of described gain media 2;
Metal grating layer 2-2, the material of metal grating layer 2-2 is a metallic gold, the thickness of this layer is T; The upper surface of described metal grating layer 2-2 is disposed with several grooves and projection periodically, the degree of depth of this groove is D, and this protruding width is W, and this periodic width is P, it is in multilayer Si (Er)/Si structural sheet 2-1 below, and described high spot is in multilayer Si (Er)/Si structural sheet 2-1;
With Si base substrate 2-3, it is in the below of metal grating layer 2-2.
Wherein, the thickness T of metal grating layer 2-2, the depth D of groove, the width W of projection and the concrete data of periodic width P, as shown in the table:
Sequence number Metal grating layer thickness T The depth D of groove The width W of projection Periodic width P
1 7nm 4nm 20nm 40nm
2 10nm 4nm 27nm 54nm
3 15nm 8nm 40nm 80nm
The preparation method of the gain media of micro Nano silicon based optical amplifier in the such scheme, can carry out according to following step:
Sputter layer of metal goldleaf on Si base substrate, the span of its thickness T is 7nm～15nm;
At goldleaf surface periodic compartment of terrain growth one deck photoresist photo resistor, the photoresist layer width W is 20nm～45nm, and this periodic width P is 40nm～90nm;
Utilize reactive ion etching method reactive ion etch, with the vertical etching of goldleaf that is not covered by photoresist, the depth D of its etched recesses is 4nm～8nm;
The substrate that is carved with metal grating is put into atomic layer deposition apparatus, and model is savannah 100; At first open silicon atom bundle and erbium ion bundle, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3, the deposit thickness scope of Si (Er) layer is 1nm～20nm; Close the erbium ion bundle then, the deposit thickness that continues depositing silicon atom and Si layer is 1nm～40nm; Then close the silicon atom bundle; Adopt chemical Mechanical Polishing Technique, Si (Er) layer and the polishing of Si layer that the non-groove gold surface of metal grating is deposited polish, and Si (Er) layer and the consistency of thickness of Si layer making it to fill up with groove;
Again open atomic layer deposition apparatus, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3Setting Si (Er) layer thickness scope is that 1nm～20nm and Si layer thickness scope are 1nm～40nm, alternating growth Si (Er) layer and Si layer, and multilayer Si (Er)/Si structural sheet growth thickness scope is 200nm～5 μ m; So far, make the gain media layer of micro Nano silicon based optical amplifier.
Wherein, the concrete data of the concentration range of silicon atom bundle and erbium ion bundle, as shown in the table:
Sequence number Silicon atom bundle concentration The concentration of erbium ion bundle
1 5×10 17cm -3 1×10 17 cm -3
2 1.5×10 18cm -3 5×10 17cm -3
3 1×10 19cm -3 9×10 17cm -3
The gain checkout procedure of micro Nano silicon based optical amplifier of the present invention can be carried out according to following steps:
1. gain media is positioned in the liquid helium, and is controlled under the 4K temperature.
2. one section polarization maintaining optical fibre front end is connected with the He-Ne laser instrument, laser wavelength is adjusted to 488nm,
This optical fiber rear end projects multilayer Si (Er)/Si body structure surface, in projected spot control 200nm * 200nm.This laser works is at pulse mode.Pulse width range is at 1ns～1 μ s, and the peak power scope of pulse is at 0～5kW/cm 2
3. drawing one section polarization maintaining optical fibre front end is connected with the Tunable Infrared Laser device, the centre wavelength of laser works is adjusted to 1550nm, this optical fiber rear end projects multilayer Si (Er)/Si body structure surface, in projected spot control 150nm * 150nm, and is in the above-mentioned described hot spot.This laser works is at pulse mode.Pulse width range is controlled at 1ns～1 μ s, and the peak power scope of pulse is at 0～1mW/cm 2
4. install lens additional on the gain media surface, and place an end of the polarization maintaining optical fibre of 1550nm at the lens rear, the other end places the effective searching surface of infrared eye.
5. open the program control platform of Labview, the switching time of strict control He-Ne laser instrument and Tunable Infrared Laser device, and by phase locking unit and infrared eye signal Synchronization.
Through above-mentioned testing process, can draw: this gain media layer can effectively be amplified the infrared laser pulses of introducing, by strictness regulation and control control system sequential, the detected net gain of detection system improves 40% than Si (the Er)/Si sandwich construction of existing distillation molecular beam epitaxy (SMBE) method growth, i.e. the net gain of the micro Nano silicon based optical amplifier that the present invention proposes can improve nearly 40%.
The model of novel micro nanometer silicon based optical amplifier provided by the invention, compared to silicon based optical amplifier in the past, this structure is utilized the surface plasma bulk effect, and is simple in structure, and, will provide experiment support for the manufacturing of micro Nano silicon based optical amplifier spare with the CMOS process compatible of standard.

Claims (8)

1, a kind of micro Nano silicon based optical amplifier, it comprises the Lights section, gain media (2) and detection system, the two ends of gain media (2) are connected with detection system with the Lights section by polarization maintaining optical fibre respectively, it is characterized in that described gain media (2) comprising:
Multilayer Si (Er)/Si structural sheet (2-1), it is in the top of described gain media (2);
Metal grating layer (2-2), the material of metal grating layer (2-2) is a metallic gold, the thickness T of this layer is 7nm～15nm; The upper surface of described metal grating layer (2-2) is disposed with several grooves and projection periodically, the depth D of this groove is 4nm～8nm, this protruding width W is 20nm～45nm, this periodic width P is 40nm～90nm, it is in multilayer Si (Er)/Si structural sheet (2-1) below, and described high spot is in multilayer Si (Er)/Si structural sheet (2-1);
With Si base substrate (2-3), it is in the below of metal grating layer (2-2).
2, a kind of micro Nano silicon based optical amplifier according to claim 1, the thickness T that it is characterized in that described metal grating layer (2-2) is 7nm; The depth D of described groove is 4nm, and the width W of projection is 20nm, and periodic width P is 40nm.
3, a kind of micro Nano silicon based optical amplifier according to claim 1, the thickness T that it is characterized in that described metal grating layer (2-2) is 10nm; The depth D of described groove is 4nm, and the width W of projection is 27nm, and periodic width P is 54nm.
4, a kind of micro Nano silicon based optical amplifier according to claim 1, the thickness T that it is characterized in that described metal grating layer (2-2) is 15nm; The depth D of described groove is 8nm, and the width W of projection is 40nm, and periodic width P is 80nm.
5, the preparation method of the gain media of a kind of micro Nano silicon based optical amplifier according to claim 1 is characterized in that it carries out according to following step:
Sputter layer of metal goldleaf on Si base substrate, the span of its thickness T is 7nm～15nm;
At goldleaf surface periodic compartment of terrain growth one deck photoresist, the photoresist layer width W is 20nm～45nm, and this periodic width P is 40nm～90nm;
Utilize reactive ion etching method, with the vertical etching of goldleaf that is not covered by photoresist, the depth D of its etched recesses is 4nm～8nm;
Start atomic layer deposition apparatus, at first open silicon atom bundle and erbium ion bundle, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3, the deposit thickness scope of Si (Er) layer is that 1nm～20nm closes the erbium ion bundle then, the deposit thickness that continues depositing silicon atom and Si layer is 1nm～40nm; Then close the silicon atom bundle; Adopt chemical Mechanical Polishing Technique, Si (Er) layer and the polishing of Si layer that the non-groove gold surface of metal grating is deposited polish, and Si (Er) layer and the consistency of thickness of Si layer making it to fill up with groove;
Again open atomic layer deposition apparatus, the concentration range of silicon atom bundle is 1 * 10 16Cm -3～1 * 10 19Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3～9 * 10 17Cm -3, setting Si (Er) layer thickness scope is that 1nm～20nm and Si layer thickness scope are 1nm～40nm, alternating growth Si (Er) layer and Si layer, and multilayer Si (Er)/Si structural sheet growth thickness scope is 200nm～5 μ m; So far, make the gain media layer of micro Nano silicon based optical amplifier.
6, the preparation method of the gain media of a kind of micro Nano silicon based optical amplifier according to claim 5, the concentration range that it is characterized in that described silicon atom bundle is 5 * 10 17Cm -3, the concentration range of erbium ion bundle is 1 * 10 17Cm -3
7, the preparation method of the gain media of a kind of micro Nano silicon based optical amplifier according to claim 5, the concentration range that it is characterized in that described silicon atom bundle is 1.5 * 10 18Cm -3, the concentration range of erbium ion bundle is 5 * 10 17Cm -3
8, the preparation method of the gain media of a kind of micro Nano silicon based optical amplifier according to claim 5, the concentration range that it is characterized in that described silicon atom bundle is 1 * 10 19Cm -3, the concentration range of erbium ion bundle is 9 * 10 17Cm -3
CNB2006101255889A 2006-12-27 2006-12-27 Micro Nano silicon based optical amplifier, and method for preparing gain medium of the amplifier Expired - Fee Related CN100440020C (en)

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Cited By (5)

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CN102053491A (en) * 2010-12-13 2011-05-11 苏州大学 Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity
CN102141651A (en) * 2011-04-07 2011-08-03 北京大学 Optical multiplexer/demultiplexer integrated based on surface plasmas and preparation method thereof
CN105008969A (en) * 2013-03-05 2015-10-28 拉姆伯斯公司 Phase gratings with odd symmetry for high-resoultion lensless optical sensing
CN105699330A (en) * 2016-01-19 2016-06-22 北京大学 Refractive index sensor based on surface plasmon laser and detection system and method
CN107193068A (en) * 2017-06-27 2017-09-22 常州瑞丰特科技有限公司 The method that hole distribution manufactures balzed grating, is manipulated using electric field

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GB2343964B (en) * 1998-11-03 2000-11-01 Toshiba Res Europ Ltd An optical device
CN1234042C (en) * 2004-02-16 2005-12-28 中国科学院上海光学精密机械研究所 Monitoring device for gain characteristic of Er-doped fibre-optical amplifier

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102053491A (en) * 2010-12-13 2011-05-11 苏州大学 Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity
CN102053491B (en) * 2010-12-13 2013-04-10 苏州大学 Ultra-deep subwavelength tunable nano photoetching structure and method based on surface plasma resonant cavity
CN102141651A (en) * 2011-04-07 2011-08-03 北京大学 Optical multiplexer/demultiplexer integrated based on surface plasmas and preparation method thereof
CN105008969A (en) * 2013-03-05 2015-10-28 拉姆伯斯公司 Phase gratings with odd symmetry for high-resoultion lensless optical sensing
CN105008969B (en) * 2013-03-05 2019-03-19 拉姆伯斯公司 The phase grating with odd symmetry for high-resolution non-lens optical sensing
US11029459B2 (en) 2013-03-05 2021-06-08 Rambus Inc. Phase gratings with odd symmetry for high-resolution lensless optical sensing
US11372147B2 (en) 2013-03-05 2022-06-28 Rambus Inc. Phase gratings with odd symmetry for high-resolution lensless optical sensing
CN105699330A (en) * 2016-01-19 2016-06-22 北京大学 Refractive index sensor based on surface plasmon laser and detection system and method
CN105699330B (en) * 2016-01-19 2019-02-22 北京大学 Index sensor and detection system and method based on surface phasmon laser
CN107193068A (en) * 2017-06-27 2017-09-22 常州瑞丰特科技有限公司 The method that hole distribution manufactures balzed grating, is manipulated using electric field

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