CN101001044A - High-tension integral gate change transistor three-level frequency-converter power cabinet - Google Patents
High-tension integral gate change transistor three-level frequency-converter power cabinet Download PDFInfo
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- CN101001044A CN101001044A CN 200710063241 CN200710063241A CN101001044A CN 101001044 A CN101001044 A CN 101001044A CN 200710063241 CN200710063241 CN 200710063241 CN 200710063241 A CN200710063241 A CN 200710063241A CN 101001044 A CN101001044 A CN 101001044A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
This invention relates to a high voltage integrated gate commutation transistor three-level inverter power tank including: a tank, a structure support frame, three compacted integrated gate commutation transistor power phase modules, a laminated bus, an output bus, an intake pipe, a delivery pipe, a hose and a quick connector, which is advantaged that the elements in IGCT applied circuit are integrated in a power tank and the volume is reduced, voltage level and power density are increased since a diode clamp three-phase three-level invert circuit is applied, and the power phase module is put on the tank inner structure support frame by a pulley, which is good for installation and debug of the system.
Description
Technical field
The invention belongs to the semiconductor switch technical field, a kind of high-tension integral gate change transistor (The Integrated Gate Commutated Thyristor particularly is provided, be called for short IGCT) three-level frequency-converter power cabinet, it is applicable in 3～27MVA high-power converter, presses transmission field in can being widely used in.
Background technology
Integral gate change transistor IGCT is the power semiconductor switch that Switzerland ABB AB aims at the medium voltage frequency converter exploitation.IGCT makes the design of frequency converter fundamentally reduce complexity based on very ripe GTO (gate turn off thyristor) technology, has improved efficient and reliability.IGCT integrates the speed-sensitive switch characteristic of IGBT (insulation gate pole bipolar transistor) and high blocking voltage and the low conduction loss characteristic of GTO (gate turn off thyristor).The high-speed switch ability of IGCT need not buffer circuit, thereby required power component number still less, and reliability of operation is higher.The application technology of IGCT is very ripe in the world at present, but but also is in the starting stage at home, does not also have the matured product of IGCT current transformer to come out.Complete IGCT active rectifying circuit or inverter circuit comprise IGCT, inverse parallel diode, clamp circuit device etc., if these elements are disperseed to be electrically connected with bus or lead after the assembling again, not only its to take volume bigger, and the line loop area is bigger, thereby causes the assorted inductance of giving birth to of circuit to increase.Assorted increase of giving birth to inductance can make the shutoff voltage of IGCT raise, and at this time for the safety that guarantees IGCT just must reduce output current, thereby causes reducing of power output.In addition, the (PCC) power of IGCT disperses to install, and also is unfavorable for the carrying out of maintenance work.
Summary of the invention
The object of the present invention is to provide a kind of high-tension integral gate change transistor (The Integrated GateCommutated Thyristor, be called for short IGCT) three-level frequency-converter power cabinet, it is integrated in all devices within the cabinet, compact conformation, volume is less, loading and unloading are convenient, and the assorted living inductance of connection line is less, and power output can reach designing requirement.
Structure of the present invention as shown in Figure 1 and Figure 2, it comprises: cabinet 1, structural supporter 2, three commutating crystal brake tube power-phase module of impacted integrated gate pole 3, stacked bus 4, output bus 5, water inlet pipe 6, outlet pipe 7, soft water pipe 8, snap joint 9 and other construction packages.Three power-phase modules 3 upper, middle and lower parallel transverse in cabinet 1 is placed, and each outside, two ends, power-phase module 3 left and right sides has pulley to ride on the cabinet inner structure bracing frame 2, can slide front and back.Each power-phase module 3 rear side is the stacked bus 4 that is parallel to phase module and close phase module, the output bus of power-phase module is positioned at the stacked bus of phase module rear downside 4 belows, the upright water pipe of the left and right sides is respectively water inlet pipe 6 and outlet pipe 7 in the cabinet, is connected with the water main of bottom of cabinet bulk.The soft water pipe 8 that links to each other with water inlet pipe 6, the water inlet of the radiator by snap joint 9 and power-phase module is connected, and the delivery port of the radiator of power-phase module is connected to the soft water pipe 8 that links to each other with outlet pipe 7 by snap joint 9.
Described radiator is a water-filled radiator, and the joint between soft water pipe and the radiator is snap joint.
Described commutating crystal brake tube power-phase module of impacted integrated gate pole is for being compacted into series connection such as IGCT, diode, radiator by clamping frame, screw rod and other construction packages the string assembly of three be parallel to each other " parallel connections ", the clamping frame of three public both sides of string assembly, clamp resistance is positioned at the anterior left and right sides of string, the clamp reactor is positioned at this string left and right sides, and the clamping capacitance device is connected bus clip and is held in this string rear middle part.Being electrically connected by connection bus between string of semiconductor device such as IGCT, diode realize, connection bus is and vertically is pressed between three string assemblies between string, and the end face of the semiconductor device that is connected and the end face of radiator are close in its surface.
Corresponding successively P, N, the M output potential that is connected in dc capacitor of described stacked bus, the potential point of the laminated bus bar correspondence of three commutating crystal brake tube power-phase module of impacted integrated gate pole needs in parallel.
The output bus of described three commutating crystal brake tube power-phase module of impacted integrated gate pole constitutes U, V, the output of W three-phase of inverter.
The invention has the advantages that: each sets of elements in the IGCT application circuit is formed in the power cabinet, has effectively reduced and taken volume.Adopt diode clamp formula three-phase tri-level inverter circuit structure, improved electric pressure, improved the power density of inverter.Power-phase module rides on the cabinet inner structure bracing frame by pulley, helps the work such as installation, debugging of system, has improved operating efficiency, also lays the foundation for maintenance and the maintenance work of minimum downtime simultaneously.Loading and unloading are convenient, compact conformation, and volume is less.Adopt the stacked bus technology of direct current to make the assorted living inductance of connection line less.
Description of drawings
Fig. 1 is a kind of structural front view of the present invention.Wherein, cabinet 1, structural supporter 2, three commutating crystal brake tube power-phase module of impacted integrated gate pole 3, water inlet pipe 6.
Fig. 2 is the rearview of a kind of structural representation of the present invention.Wherein, cabinet 1, structural supporter 2, three commutating crystal brake tube power-phase module of impacted integrated gate pole 3, stacked bus 4, output bus 5, water inlet pipe 6, outlet pipe 7, soft water pipe 8, snap joint 9.
Embodiment
Fig. 1 and Fig. 2 are a kind of embodiment of the present invention.Three power-phase modules 3 upper, middle and lower parallel transverse in cabinet l is placed, and each outside, two ends, power-phase module 3 left and right sides has pulley to ride on the cabinet inner structure bracing frame 2, can slide front and back.Each power-phase module 3 rear side is the stacked bus 4 that is parallel to phase module and close phase module, the output bus of power-phase module is positioned at the stacked bus of phase module rear downside 4 belows, the upright water pipe of the left and right sides is respectively water inlet pipe 6 and outlet pipe 7 in the cabinet, is connected with the water main of bottom of cabinet bulk.The soft water pipe 8 that links to each other with water inlet pipe 6, the water inlet of the radiator by snap joint 9 and power-phase module is connected, and the delivery port of the radiator of power-phase module is connected to the soft water pipe 8 that links to each other with outlet pipe 7 by snap joint 9.
Circuit among the present invention between the semiconductor device such as each IGCT connects and adopts stacked bus to realize, and stacked bus is close to power device, structurally reduced the loop area of line, experimental result has proved that this design can significantly reduce the assorted living inductance of connection line, has improved the power output of whole inverter.
Claims (6)
1. high-tension integral gate change transistor three-level frequency-converter power cabinet, it is characterized in that, comprising: cabinet (1), structural supporter (2), three commutating crystal brake tube power-phase module of impacted integrated gate pole (3), stacked bus (4), output bus (5), water inlet pipe (6), outlet pipe (7), soft water pipe (8), snap joint (9); Three power-phase modules (3) upper, middle and lower parallel transverse in cabinet (1) is placed, and the outside, each power-phase module (3) two ends, the left and right sides has pulley to ride on the cabinet inner structure bracing frame (2); Each power-phase module (3) rear side is the stacked bus (4) that is parallel to phase module and close phase module, the output bus of power-phase module is positioned at the stacked bus of phase module rear downside (4) below, the upright water pipe of the left and right sides is respectively water inlet pipe (6) and outlet pipe (7) in the cabinet, is connected with the water main of bottom of cabinet bulk; The soft water pipe (8) that links to each other with water inlet pipe (6), the water inlet of the radiator by snap joint (9) and power-phase module is connected, and the delivery port of the radiator of power-phase module is connected to the soft water pipe (8) that links to each other with outlet pipe (7) by snap joint (9).
2. according to the described frequency-converter power cabinet of claim 1, it is characterized in that: described radiator is a water-filled radiator.
3. according to the described frequency-converter power cabinet of claim 1, it is characterized in that: the joint between soft water pipe and the radiator is snap joint.
4, according to the described frequency-converter power cabinet of claim 1, it is characterized in that: described commutating crystal brake tube power-phase module of impacted integrated gate pole is for being compacted into series connection such as IGCT, diode, radiator by clamping frame, screw rod and other construction packages the string assembly of three be parallel to each other " parallel connections ", the clamping frame of three public both sides of string assembly, clamp resistance is positioned at the anterior left and right sides of string, the clamp reactor is positioned at this string left and right sides, and the clamping capacitance device is connected bus clip and is held in this string rear middle part; Being electrically connected by connection bus between string of semiconductor device such as IGCT, diode realize, connection bus is and vertically is pressed between three string assemblies between string, and the end face of the semiconductor device that is connected and the end face of radiator are close in its surface.
5, according to the described frequency-converter power cabinet of claim 1, it is characterized in that: corresponding successively P, N, the M output potential that is connected in dc capacitor of described stacked bus, the potential point of the laminated bus bar correspondence of three commutating crystal brake tube power-phase module of impacted integrated gate pole needs in parallel.
6, according to the described frequency-converter power cabinet of claim 1, it is characterized in that: the output bus of described three commutating crystal brake tube power-phase module of impacted integrated gate pole constitutes U, V, the output of W three-phase of inverter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100632410A CN100426639C (en) | 2007-01-04 | 2007-01-04 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100632410A CN100426639C (en) | 2007-01-04 | 2007-01-04 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101001044A true CN101001044A (en) | 2007-07-18 |
| CN100426639C CN100426639C (en) | 2008-10-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100632410A Expired - Fee Related CN100426639C (en) | 2007-01-04 | 2007-01-04 | High-tension integral gate change transistor three-level frequency-converter power cabinet |
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| CN (1) | CN100426639C (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764570A (en) * | 2010-02-11 | 2010-06-30 | 中冶京诚工程技术有限公司 | Outdoor box type frequency conversion control station |
| CN102055305A (en) * | 2009-10-31 | 2011-05-11 | 赛米控电子股份有限公司 | Current transformer system of modularized structure |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN102097941A (en) * | 2010-12-30 | 2011-06-15 | 冶金自动化研究设计院 | Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet |
| CN102158057A (en) * | 2011-04-01 | 2011-08-17 | 株洲南车时代电气股份有限公司 | Modularized power cabinet |
| CN102437714A (en) * | 2011-12-29 | 2012-05-02 | 徐州中矿大传动与自动化有限公司 | Three-level transducer water-cooling heat-radiating structure |
| CN103051207A (en) * | 2012-07-31 | 2013-04-17 | 广东电网公司东莞供电局 | Injection enhanced gate transistor (IEGT)-based high-capacity water-cooled modular H-bridge structure for converter |
| CN103994684A (en) * | 2014-01-21 | 2014-08-20 | 常州博瑞电力自动化设备有限公司 | Cooling jellyfish tube for flexible DC transmission converter valve tower |
| CN104201867A (en) * | 2014-09-16 | 2014-12-10 | 北京金自天正智能控制股份有限公司 | Three-level IGBT power cabinet based on heat pipe radiator |
| WO2016201821A1 (en) * | 2015-06-18 | 2016-12-22 | 国电南瑞科技股份有限公司 | Iegt-based high-power three-level converter power unit |
| CN107800306A (en) * | 2017-11-23 | 2018-03-13 | 北京金自天正智能控制股份有限公司 | A kind of high-power AC and DC drive rectifier cabinet based on heat pipe heat radiation technology |
| CN108075620A (en) * | 2018-01-02 | 2018-05-25 | 清华四川能源互联网研究院 | The power unit structure that a kind of IGCT thyristors are formed |
| CN108966609A (en) * | 2018-09-10 | 2018-12-07 | 珠海格力电器股份有限公司 | Radiator and electrical part |
| CN109687689A (en) * | 2018-12-03 | 2019-04-26 | 深圳市越疆科技有限公司 | Modular event driven device electrical system, combined method and servo control system |
| CN110311537A (en) * | 2018-03-21 | 2019-10-08 | 中车株洲电力机车研究所有限公司 | Power cabinet and current transformer |
| CN115312480A (en) * | 2022-10-11 | 2022-11-08 | 合肥中恒微半导体有限公司 | DBC substrate for IGBT power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7106589B2 (en) * | 2003-12-23 | 2006-09-12 | Aall Power Heatsinks, Inc. | Heat sink, assembly, and method of making |
| CN100341234C (en) * | 2005-03-10 | 2007-10-03 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of integrated gate pole |
| CN2798313Y (en) * | 2005-04-09 | 2006-07-19 | 襄樊台基半导体有限公司 | Water cooled radiator for power semiconductor component |
-
2007
- 2007-01-04 CN CNB2007100632410A patent/CN100426639C/en not_active Expired - Fee Related
Cited By (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055305A (en) * | 2009-10-31 | 2011-05-11 | 赛米控电子股份有限公司 | Current transformer system of modularized structure |
| CN102055305B (en) * | 2009-10-31 | 2014-08-06 | 赛米控电子股份有限公司 | Current transformer system of modularized structure |
| CN101764570B (en) * | 2010-02-11 | 2012-09-05 | 中冶京诚工程技术有限公司 | Outdoor box type frequency conversion control station |
| CN101764570A (en) * | 2010-02-11 | 2010-06-30 | 中冶京诚工程技术有限公司 | Outdoor box type frequency conversion control station |
| CN102097941A (en) * | 2010-12-30 | 2011-06-15 | 冶金自动化研究设计院 | Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet |
| CN102064676B (en) * | 2010-12-30 | 2012-11-28 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN102097941B (en) * | 2010-12-30 | 2012-12-26 | 冶金自动化研究设计院 | Dual PWM (pulse width modulation) integrated gate commutated thyristor three-level power cabinet |
| CN102064676A (en) * | 2010-12-30 | 2011-05-18 | 冶金自动化研究设计院 | Integrated gate commutated thyristor (IGCT) three-level power module |
| CN102158057A (en) * | 2011-04-01 | 2011-08-17 | 株洲南车时代电气股份有限公司 | Modularized power cabinet |
| CN102158057B (en) * | 2011-04-01 | 2013-05-01 | 株洲南车时代电气股份有限公司 | Modularized power cabinet |
| CN102437714A (en) * | 2011-12-29 | 2012-05-02 | 徐州中矿大传动与自动化有限公司 | Three-level transducer water-cooling heat-radiating structure |
| CN103051207A (en) * | 2012-07-31 | 2013-04-17 | 广东电网公司东莞供电局 | Injection enhanced gate transistor (IEGT)-based high-capacity water-cooled modular H-bridge structure for converter |
| CN103051207B (en) * | 2012-07-31 | 2015-09-16 | 广东电网公司东莞供电局 | A kind of Large Copacity current transformer water cooling module H bridge construction based on IEGT |
| CN103994684A (en) * | 2014-01-21 | 2014-08-20 | 常州博瑞电力自动化设备有限公司 | Cooling jellyfish tube for flexible DC transmission converter valve tower |
| CN104201867A (en) * | 2014-09-16 | 2014-12-10 | 北京金自天正智能控制股份有限公司 | Three-level IGBT power cabinet based on heat pipe radiator |
| WO2016201821A1 (en) * | 2015-06-18 | 2016-12-22 | 国电南瑞科技股份有限公司 | Iegt-based high-power three-level converter power unit |
| CN107800306A (en) * | 2017-11-23 | 2018-03-13 | 北京金自天正智能控制股份有限公司 | A kind of high-power AC and DC drive rectifier cabinet based on heat pipe heat radiation technology |
| CN108075620A (en) * | 2018-01-02 | 2018-05-25 | 清华四川能源互联网研究院 | The power unit structure that a kind of IGCT thyristors are formed |
| CN108075620B (en) * | 2018-01-02 | 2024-04-09 | 清华四川能源互联网研究院 | High-power unit structure formed by IGCT thyristors |
| CN110311537A (en) * | 2018-03-21 | 2019-10-08 | 中车株洲电力机车研究所有限公司 | Power cabinet and current transformer |
| CN108966609A (en) * | 2018-09-10 | 2018-12-07 | 珠海格力电器股份有限公司 | Radiator and electrical part |
| CN108966609B (en) * | 2018-09-10 | 2023-10-10 | 珠海格力电器股份有限公司 | Heat dissipating device and electric device |
| CN109687689A (en) * | 2018-12-03 | 2019-04-26 | 深圳市越疆科技有限公司 | Modular event driven device electrical system, combined method and servo control system |
| CN115312480A (en) * | 2022-10-11 | 2022-11-08 | 合肥中恒微半导体有限公司 | DBC substrate for IGBT power module |
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Effective date of registration: 20130220 Address after: 100070 No. 6 Fu Feng Road, Fengtai Science City, Beijing Patentee after: Beijing Jinzi Energy Technology Development Co.,Ltd. Patentee after: Research & Design Inst. of Metallurgical Automation Patentee after: Beijing Jinzitianzheng Intelligent Control Co., Ltd. Address before: 100071 Beijing West Fourth Ring Road, Fengtai District, No. 72 Patentee before: Research & Design Inst. of Metallurgical Automation Patentee before: Beijing Jinzitianzheng Intelligent Control Co., Ltd. |
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