CN100593361C - Plasma processing apparatus and method - Google Patents
Plasma processing apparatus and method Download PDFInfo
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- CN100593361C CN100593361C CN200610066914A CN200610066914A CN100593361C CN 100593361 C CN100593361 C CN 100593361C CN 200610066914 A CN200610066914 A CN 200610066914A CN 200610066914 A CN200610066914 A CN 200610066914A CN 100593361 C CN100593361 C CN 100593361C
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Abstract
A plasma processing apparatus that passes a microwave, which is introduced into a waveguide, through a slot and propagates the microwave to a dielectric, converts a predetermined gas supplied into a processing chamber into plasma, and applies plasma processing to a substrate, in which a plurality of the waveguides are disposed side by side, a plurality of dielectrics are provided for each of the waveguides, and one slot, or two or more slots is or are provided for each of the dielectrics, is provided. The area of each of the dielectrics can be made extremely small, and a microwave can be reliably propagated into the entire surface of the dielectric. A thin support member that supports the dielectric can be used, a uniform electromagnetic field can be formed in an entire area above the substrate, and uniform plasma can be generated in the processing chamber.
Description
Technical field
The present invention relates to generate plasma, substrate carries out plasma processing apparatus and the method that film forming etc. is handled relatively.
Background technology
For example, in the manufacturing process of LCD device etc., utilize microwave, use and in process chamber, produce plasma, carry out on the LCD substrate that CVD handles or the device of etch processes etc.As plasma processing apparatus, known have a device (with reference to TOHKEMY 2004-200646 communique, TOHKEMY 2004-152876 communique) that is set side by side with many waveguides above process chamber abreast.Below this waveguide, have a plurality of grooves side by side, in addition, below waveguide, be provided with flat dielectric.Equipment constitutes: with the surface of microwave propagation to dielectric, utilize the energy (electromagnetic field) of microwave, with processing gas (rare gas that plasma exciatiaon is used and/or the plasma processing gas) plasmaization of supplying with in the process chamber by groove.
Yet along with the maximization of substrate etc., processing unit also becomes greatly, the manufacturing difficulty of the dielectric of Da Xinghuaing particularly, manufacturing cost height.In addition, when dielectric weighed greatly, the support unit that supports it must have firm structure, but thus, appeared at the stripped uneven problem of the grade that produces in the process chamber easily.That is: the support unit of maximization becomes obstruction, hinders above substrate whole to form uniform electric magnetic field.In addition, because the area of dielectric itself is big,, make to be difficult on the whole surface of dielectric, propagate uniformly microwave because of the kind of processing gas or the difference of the various conditions such as pressure in the process chamber.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of easy to manufacturely, and can in process chamber, produce the plasma processing apparatus and the method for uniform plasma.
In order to address the above problem, according to the invention provides a kind of plasma processing apparatus, make the microwave that imports waveguide propagate on the dielectric by groove, make and supply to the interior regulation gaseous plasmaization of container handling, substrate is implemented plasma treatment, it is characterized in that, dispose many above-mentioned waveguides side by side, on each root waveguide, be respectively arranged with a plurality of dielectrics, and each dielectric is provided with the groove more than 1 or 2.In this plasma processing unit, also can on above-mentioned many each waveguide that disposes side by side, be respectively arranged with a plurality of grooves, on each groove, dielectric is set.
In addition,, provide a kind of plasma processing apparatus, make the microwave that imports waveguide propagate on the dielectric, make to supply to the interior regulation gaseous plasmaization of container handling, substrate is implemented plasma treatment by groove according to the present invention; It is characterized in that, dispose many above-mentioned waveguides side by side, be respectively arranged with a plurality of dielectrics on each root of the waveguide more than 2, and each dielectric is provided with the groove more than 1 or 2.In this plasma processing unit, also can stride across the groove configuration dielectric that on the waveguide more than 2, forms respectively.
In these plasma processing apparatus, above-mentioned waveguide for example is a square waveguide.In addition, above-mentioned a plurality of dielectric for example is square tabular.Wherein, for example around above-mentioned a plurality of dielectrics, be respectively arranged with regulation gas is supplied to the gas ejection ports more than 1 or 2 in the container handling.In addition, also can on the support unit of the above-mentioned a plurality of dielectrics of supporting, the above-mentioned gas jet be set.
In addition, according to the present invention, a kind of method of plasma processing is provided, make the microwave that imports waveguide propagate on the dielectric by groove, the feasible gaseous plasmaization of supplying with the regulation in the container handling is implemented plasma treatment to substrate, it is characterized in that, microwave is imported respectively in the many waveguides that dispose side by side, make microwave respectively by being arranged on the groove more than 1 or 2 on each dielectric, propagating on a plurality of dielectrics that are arranged on each waveguide.
In addition, according to the invention provides a kind of method of plasma processing, make the microwave that imports waveguide propagate on the dielectric by groove, the feasible gaseous plasmaization of supplying with the regulation in the container handling, substrate is implemented plasma treatment, it is characterized in that, microwave is imported many side by side in the waveguides of configuration, microwave is propagated on a plurality of each dielectric in each of the waveguide that is separately positioned on more than 2 by the groove more than 1 or 2 respectively.
Description of drawings
Fig. 1 is the longitudinal section of the general configuration of the plasma processing apparatus of expression embodiments of the present invention.
Fig. 2 is bearing in the bottom view of the configuration of a plurality of dielectrics on lid following for expression.
Fig. 3 is the longitudinal section that the part of lid is amplified.
Fig. 4 is for being level with the E face at the short side direction of the cross sectional shape of waveguide, is that the part of the lid of the execution mode that disposes of vertical mode is amplified longitudinal section at the H of long side direction face.
Fig. 5 is the key diagram of the gas ejection ports on being configured in below the support unit.
Fig. 6 for support from the below each dielectric below the key diagram of the support unit that constitutes of the mode of corner portion.
The bottom view of the lid that Fig. 7 disposes in the mode that strides across 2 waveguides for a plurality of rectangular dielectrics.
Fig. 8 is the longitudinal section of the amplification of the lid in the X-X cross section among Fig. 7.
Fig. 9 is the longitudinal section of the amplification of the lid in the Y-Y cross section among Fig. 7.
Embodiment
Below, the plasma processing apparatus of handling according to the CVD (chemical vapour deposition Chemical vapor deposition) that carries out as an example of plasma treatment 1 illustrates embodiments of the present invention.Fig. 1 is the longitudinal section of the general configuration of the plasma processing apparatus 1 of expression embodiments of the present invention.Fig. 2 is bearing in the bottom view of the configuration of a plurality of dielectrics 22 on lid 3 that this plasma processing unit 1 has following for expression.Fig. 3 is the longitudinal section that the part of lid 3 is amplified.
This plasma processing unit 1 comprises the container handling that end cube shaped is arranged 2 of upper opening and clogs the lid 3 of the top of this container handling 2.This container handling 2 and lid 3 are made of aluminum, all are ground state.
Be provided with pedestal 4 in the inside of container handling 2, as the mounting table of mounting as glass substrate (hereinafter referred to as " the substrate ") G of substrate.This pedestal 4 is formed by aluminium nitride, and portion is provided with the power supply 5 of the inside that at Electrostatic Absorption substrate G, simultaneously the bias voltage of regulation is applied to container handling 2 and substrate G is heated to the heater 6 of set point of temperature within it.Be arranged on container handling 2 the outside apply the high frequency electric source 7 that bias voltage is used, be connected with power supply 5 by adaptation 7 ' with capacitor etc., simultaneously, the high-voltage DC power supply 8 that Electrostatic Absorption is used is connected with power supply 5 by coil 8 '.Equally, the AC power 9 that is arranged on the outside of container handling 2 is connected with heater 6.
Be provided with exhaust outlet 13 in the bottom of container handling 2, the exhaust apparatus (not shown) that is used for the vacuum pump etc. of the outside by being arranged on container handling 2 carries out exhaust to the atmosphere in the container handling 2.In addition, be provided with cowling panel 14 around the pedestal 4 in container handling 2, be used for the gas flow in the container handling 2 is controlled at preferred condition.
Constituting of lid 3: below the lid main body of making by for example aluminium 20, slot antenna 21 is installed, polylith dielectric 22 is installed below slot antenna 21 again.Wherein, lid main body 20 and slot antenna 21 constitute one.As shown in Figure 1, utilize lid 3 clog container handling 2 above state under, utilize to be configured in the O shape ring 23 between the following periphery that cover main body 20 and container handling 2 top and to be configured in O shape ring 41 around each groove 40 described later to keep the interior air-tightness of container handlings 2.
Below lid main body 20, be formed with many waveguides 25.In this embodiment, have 6 waveguides 25 that all extend on straight line, each waveguide 25 disposes side by side in parallel each other mode.In addition, each waveguide 25 formation cross sectional shapes are square so-called square waveguide.For example under the situation of TE10 pattern, be level with H face at the long side direction of the cross sectional shape (square shape) of each waveguide 25, be that vertical mode disposes at the E of short side direction face.Wherein, how long side direction and short side direction dispose, and change because of pattern is different.In addition, for example Al of the inside of each waveguide 25
2O
3, filling such as quartz, fluororesin.
As shown in Figure 2, branch-waveguide path 26 is connected with the end of each waveguide 25, and the microwave of for example 2.45GHz that is taken place by the microwave feeding means 27 of the outside that is arranged on container handling 2 through this branch's guided wave path 26, imports respectively in each waveguide 25.In addition, be provided with the gas flow path 31 that circulation is supplied with the water route 29 of the cooling water that flows out from the cooling water supply source 28 of the outside that is arranged on container handling 2 and supplied with equally the regulation gas of sending from the gas supply source 30 of the outside that is arranged on container handling 2 in the inside of lid main body 20.In the present embodiment, prepare argon gas feed source 35 as gas supply source 30, prepare silane gas supply source 36 and hydrogen supply source 37 as film forming gas, by each valve 35a, 36a, 37a, mass flow controller 35b, 36b, 37b, valve 35c, 36c, 37c are connected with gas flow path 31.
The slot antenna 21 that forms below lid main body 20 is made by the material with conductivity, is for example made by Al.In addition, on slot antenna 21, equally spaced dispose a plurality of groove 40 as open-work.Each groove 40 interval each other is set at for example λ g/2 (λ g is the wavelength in the waveguide).In this form, when overlooking, each groove 40 forms the slotted hole of slot shape, in the long side direction of each groove 40 mode consistent with the long side direction of waveguide 25, disposes each groove 40 side by side on straight line.In addition, on each waveguide 25, form a plurality of grooves 40 respectively, in illustrated form, on 6 each waveguides 25, on each, form 6 grooves 40 respectively, be aggregated in cover main body 20 whole below on, distribute equably and dispose 6 * 6=36 groove 40.
As shown in Figure 3, be provided with the O shape ring 41 that disposes in the mode of surrounding each groove 40 below lid main body 20 and between above the slot antenna 21.For example under atmospheric pressure state, microwave is imported in the waveguide 25,, therefore can keep the air-tightness in the container handling 2 owing to dispose O shape ring 31 in the mode of each groove 40 of above-mentioned encirclement.
As shown in Figure 2, in this form, be formed on slot antenna 21 below the structure that constitutes foursquare flat polylith dielectric 22 is installed.Each dielectric 22 is for example by quartz glass, AlN, Al
2O
3, sapphire, SiN, pottery etc. make.Each groove 40 that forms at slot antenna 21 is installed on each dielectric 22 one to one.Therefore, in illustrated form, add up to 6 * 6=36 piece dielectric 22 evenly to distribute to be configured in and cover below main body 20 whole.
Each dielectric 22 forms cancellate support unit 45 supportings by utilization, keeps the following state that is installed in slot antenna 21.Support unit 45 is made of aluminum, forms ground state with slot antenna 21.By this support unit 45, periphery below each dielectric 22 of lower support can make the following major part of each dielectric 22 form the state that is exposed in the container handling 2.
Thus, forming on each crosspoint part of cancellate support unit 45, around each dielectric 22 gas ejection ports 46 is set respectively, is used for regulation gas is supplied in the container handling 2, jet 46 distributes equably to be configured in and covers below main body 20 whole.Formerly between Shuo Ming lid main body 20 gas inside streams 31 and each gas ejection ports 46, be respectively arranged with the gas piping 47 that connects slot antenna 21 and support unit 45.Thus, supply to the regulation gas of gas flow path 31,, be injected in the container handling 2 from gas ejection ports 46 by gas piping 47 from gas supply source 30.
In addition, in the plasma processing apparatus 1 of the embodiments of the present invention of above formation, for example situation of amorphous silicon film forming is illustrated.During processing, substrate G is positioned on the pedestal 4 in the container handling 2, from gas supply source 30, from gas flow path 31 process gas pipings 47, gas ejection ports 46, regulation gas is supplied in the container handling 2, for example the mist with argon gas/silane gas/hydrogen supplies in the container handling 2, from exhaust outlet 13 exhausts, will be set at the pressure of regulation in the container handling 2.At this moment, by being configured in the gas that covers the gas ejection ports 46 ejection regulations below main body 20 whole from distribution, the gas of regulation is supplied on the whole surface of the substrate G that is positioned on the pedestal 4 uniformly.
Thus, the gas of stipulating is supplied in the container handling 2, on the other hand, utilize heater 6 substrate G to be heated to the temperature of regulation.In addition, the microwave of for example 2.45GHz that is produced by microwave feeding means shown in Figure 2 27 through branch's guided wave path 26, from each waveguide 25, propagates in each dielectric 22 by each groove 40 respectively.Thus, utilize the energy that propagates into the microwave in each dielectric 22, in container handling 2, form electromagnetic field,, can carry out the amorphous silicon film forming on the surface on the substrate G by making the above-mentioned processing gaseous plasmaization in the container handling 2.At this moment, utilize for example low electron temperature, 10 of 0.7eV～2.0eV
11～10
13Cm
-3High-density plasma, on substrate G, damage few uniform film forming.The condition of amorphous silicon film forming is as follows: for example the pressure in the container handling 2 is 5～100Pa, is preferably 10～60Pa; The temperature of substrate G is 200～300 ℃, is preferably 250 ℃～300 ℃; The power output of microwave feeding means is 500～5000W, is preferably 1500～2500W.
Adopt this plasma processing unit 1,, can realize the miniaturization and the lightweight of each dielectric 22 on each waveguide 25 by a plurality of dielectrics 22 are set respectively.Therefore, plasma processing apparatus 1 is easy to manufacture, and cost is low, can improve with respect to the counter stress that increases of the area of substrate.In addition, on each dielectric 22, groove 40 is set respectively, and each dielectric 22 area one by one reduces significantly, therefore, can make microwave propagate into the whole surface of each dielectric 22 reliably as surface wave.When making as the microwave propagation of surface wave to large-area dielectric surperficial, make spread state produce deviation by treatment conditions etc., have to obtain uniform situation.Relative therewith, adopt this plasma processing unit 1, because the area of each dielectric 22 significantly reduces, can make microwave (surface) propagate into the whole surface of each dielectric 22 equably, can in the entire process chamber, carry out uniform plasma treatment.Therefore, can widen the processing window, carry out stable plasma processing.In addition, because the support unit 46 of supporting dielectric 22 can be very thin, therefore, the following major part of each dielectric 22 is exposed in the container handling 2, when in container handling 2, forming electromagnetic field, support unit 46 constitutes obstacle hardly, can form uniform electric magnetic field above substrate G is whole, makes to produce uniform plasma in process chamber.
In addition, plasma processing apparatus 1 as this execution mode, the supporting member 45 of supporting dielectric 22 is provided with the gas ejection ports 46 of supplying with regulation gas, need be in process chamber configuration process gas to supply with the spray of usefulness first-class, therefore can simplification device.Simultaneously, it is first-class to have omitted spray, can shorten the distance of dielectric 22 and substrate G, makes equipment miniaturization, can realize stipulating the minimizing of gas flow.Moreover, owing between dielectric 22 and substrate G, do not have unnecessary parts, can produce plasma more equably.Wherein, so described in the execution mode, utilize metal formation support units 45 such as aluminium, then easy processing gas jet 46 and gas piping 47 etc.
More than, an example of preferred implementation of the present invention has been described, but the present invention is not limited to described mode.In the illustrated embodiment, 6 dielectrics 22 are set all on each root of 6 waveguides 25 respectively, waveguide 25 also can be many arbitrarily, and in addition, the number that is separately positioned on each dielectric 22 on each waveguide 25 also can be for a plurality of arbitrarily.In addition, be arranged on the number of the dielectric 22 on each waveguide 25 can be identical mutually also can be different.In addition, each dielectric 22 is provided with a groove 30 in the example, also a plurality of grooves 30 can be set on each dielectric 22, and the different groove of number 30 perhaps is set on each dielectric 22.
As shown in Figure 4, can be level also with E face at the short side direction of the cross sectional shape (square) of each waveguide 25, be that vertical mode disposes at the H of long side direction face.Under kind of situation, on the groove 40 that forms on the slot antenna 21 is configured in E face as the short side direction of waveguide 25.Wherein, execution mode shown in Figure 4, except so that be level at the E face of the short side direction of the cross sectional shape (square) of waveguide 25, the H face that makes at long side direction is outside vertical mode disposes, and has and the same structure of mode that illustrates in above-mentioned Fig. 3 etc.Therefore, in Fig. 4, use identical symbolic representation, and the repetitive description thereof will be omitted.Adopt mode shown in Figure 4,, therefore the water route 29 of cooling water can be configured in the side of each conduit 25 because each waveguide 25 gap is each other broadened.Can also further increase the radical of waveguide 25.
The shape of the groove 40 that forms on slot antenna 21 is not limited to the slot shape, can form different shape.In addition, except being configured in a plurality of grooves 40 on the straight line, can constitute the so-called radial transmission line slot antenna that is configured to scroll or concentric circles.In addition, the shape of dielectric 22 also can not be a square, for example can make rectangularity, triangle, arbitrary polygon, plectane, ellipse etc.In addition, each dielectric 22 each other shape can be the same or different.
In the gas ejection ports 46 that forms on the support unit 45 is not must be configured on each crosspoint part of support unit 45, shown in 5 figure, also can be with between gas ejection ports 46 each crosspoint parts of configuration, below support unit 45, the mode on every side that supplies to each dielectric 22 with the gas with regulation constitutes.In this case, shown in the chain-dotted line among Fig. 5, also can be between each crosspoint part, with a plurality of gas ejection ports 46 be configured in support unit 45 below.In addition, also can be in configuration gas ejection ports 46 on both between each crosspoint part of support unit 45 and each the crosspoint part.
The support unit 45 that supports each dielectric 22 is not limited only to make clathrate.For example, as shown in Figure 6, also can use from the below support each dielectric 22 below the support unit 45 ' of corner portion.In this case, the jet 46 ' that will handle gas equally is arranged on the support unit 45 ', regulation gas can be supplied to thus each dielectric 22 around.Wherein, at the cancellate support unit 45 that forms that uses described in Fig. 2 etc., below lower support dielectric 22 under the situation of periphery, by disposing O shape ring etc. between periphery below dielectric layer 22 and the cancellate support unit 45, the bubble-tight advantage that can keep more accurately in the container handling 2 is arranged.
In the above embodiment, the example that carries out as the amorphous silicon film forming of an example of plasma treatment has been described, in the present invention, except the amorphous silicon film forming, also can handle (silane hydrogen), oxide-film processing, silane oxygen processing (silane oxygen) at oxide-film film forming, polysilicon film forming, silane ammonia treatment (silane ammonia), polycarbosilane hydroxide, other CVD uses in handling, and can also use in etch processes.
More than, the execution mode that a plurality of dielectrics 22 are set respectively on each of each waveguide 25 has been described, also can on each of the waveguide more than 2 25, a plurality of dielectrics 22 be set respectively.Fig. 7 is the bottom view that the lid 3 of a plurality of dielectrics 22 enforcements is set respectively on each root of 2 waveguides 25.Fig. 8 is the longitudinal section of amplification of the lid 3 in the X-X cross section among Fig. 7.Fig. 9 is the amplification longitudinal section of the lid 3 in the Y-Y cross section among Fig. 7.Wherein,, be illustrated in the execution mode that a plurality of dielectrics 22 are set respectively on each roots of 2 waveguides 25, a plurality of dielectrics 22 can certainly be set respectively on each root of the waveguide more than 3 25 as an example.
In the execution mode shown in Fig. 7～9, with previous same at the execution mode described in Fig. 1,2, the constituting of lid 3: integrally formed slot antenna 21 below lid main body 20, and below slot antenna 21 dielectric 22 of a plurality of tiles of installation.With at above-mentioned Fig. 1, in the execution mode described in 2, it is relative that dielectric 22 is made quadrate, in this execution mode, dielectric 22 forms rectangle.Lid main body 20 and slot antenna 21 are made of conductive material one such as aluminium, are state electrical ground.
Each square waveguide 25 that forms in the inside of lid main body 20 serve as vertically with the H face at the long side direction of its cross sectional shape (square), is that the mode of level disposes at the E of short side direction face.Wherein, how long side direction and short side direction dispose, and change because of pattern is different.In addition, in this execution mode, the inside of each square waveguide 25 is filled with the dielectric components 25 ' of fluororesin (for example, Telfon (registered trade mark)) respectively.Wherein, the material of dielectric components 25 ' also can be used for example Al except fluororesin
2O
3, dielectric material such as quartz.
Below constituting each square waveguide 25 of slot antenna 21, equally spaced dispose a plurality of groove 40 as open-work along the length direction of each square waveguide 25.In this execution mode (being equivalent to G5), series connection is set up in parallel 12 grooves 40 respectively on each of each square waveguide 25, on whole slot antenna 21, (slot antenna 21) evenly distributes and is provided with 12 * 6 and is listed as=72 grooves 40 below lid main body 20 whole.Each groove 40 interval each other is so that the interval of the groove 40 that is close to mutually on the long side direction of each square waveguide 25 is set in the mode of counting λ g '/2 (λ g ' is the wavelength in waveguide of the microwave under the 2.45GHz situation) between the central shaft.Wherein, the number of the groove 40 that forms on each square waveguide 25 is arbitrarily, for example also can on each of each square waveguide 25 13 grooves 40 be set, on slot antenna 21 all, (slot antenna 21) distributes equably and 13 * 6 is listed as=78 grooves 40 below lid main body 20 whole.
Thus, the inside of each groove 40 of the configuration that evenly distributes on whole slot antenna 21 is filled Al respectively
2O
3The dielectric components of making 40 '.Wherein, can use dielectric materials such as fluororesin, quartz as dielectric components 40 '.In addition, below this each groove 40, as mentioned above, configuration is installed in a plurality of dielectrics 22 below the slot antenna 21 respectively.Each dielectric 22 can be by for example quartz glass, AlN, Al
2O
3, dielectric material such as sapphire, SiN, pottery makes.
In this execution mode, each dielectric 22 disposes in the mode that strides across 2 square waveguides 25 that are connected with microwave feeding means 27 by Y branched pipe 26 respectively.As mentioned above, dispose whole 6 square waveguides 25 abreast in the inside of lid main body 20, each dielectric 22 is configured to three row, makes each corresponding with 2 square waveguides 25 respectively.
In addition, as mentioned above, below each square waveguide 25 (slot antenna 21), arranged side by side 12 grooves 40 of configuration of series connection respectively on each, each dielectric 22 is installed in each groove 40 mode each other that strides across interconnective 2 square waveguides 25 (by 2 square waveguides 25 of Y branched pipe 26 with identical microwave feeding means 27 connections).Thus ,=36 dielectrics 22 of whole installation 12 * 3 row below slot antenna 21.Setting forms cancellate beam 45 below slot antenna 21, is used for supporting 36 dielectrics 22 that assortment is the state of 12 * 3 row.Wherein, the number of the groove 40 that forms below each square waveguide 25 is arbitrarily.For example, also can be respectively below each of each square waveguide 25 13 grooves 40 be set respectively, below slot antenna 21, configuration all is=39 dielectrics 22 of 13 * 3 row.
Use seal members such as O shape ring between each dielectric 22 and each groove 40, form sealing state.For example under atmospheric pressure state, microwave is imported each square waveguide 25 that forms in the inside of lid main body 20, can seal respectively between each dielectric 22 and each groove 40 thus, can keep the hermetic seal in the process chamber 4.
Each dielectric 22 forms the free space wavelength λ=about 120mm of the length L of its long side direction greater than the microwave in the process chamber 4 that vacuumizes, and the length M of broadside is less than the short rectangle of the wavelength X of free space.Wherein, in Fig. 7, charge to the length L of long side direction of dielectric 22 and the length M of broadside.Utilizing microwave feeding means 27 to produce, for example under the situation of the microwave of 2.45GHz, the wavelength X of the microwave of propagating on the dielectric surface is substantially equal to the wavelength X of free space.Thus, set the length L of each dielectric 22 long side direction greater than 120mm, for example 188mm.In addition, set the length M of each dielectric 22 broadside less than 120mm, for example 40mm.
In addition, as shown in Figure 8, form on below each dielectric 22 concavo-convex.That is: in this execution mode, below forming rectangular each dielectric 22, dispose 7 recesses 50,50 ' side by side along its long side direction series connection.Overlook and (see from below under the state of lid 3) under the state that these each recesses 50,50 ' all form roughly the same rectangle.In addition, the medial surface of each recess 50,50 ' forms the wall of approximate vertical.
The degree of depth of each recess 50,50 ' need not be identical all, also can part or all degree of depth difference.In execution mode shown in Figure 8, the degree of depth of recess 50 ' of middle that is positioned at 2 grooves 40 is the darkest, and the degree of depth of other recesses 50 is all than the depth as shallow of recess 50 '.Thus, on the position of recess 50, the thickness setting of dielectric 22 is not for hindering the thickness of microwave propagation in fact.Relative therewith, in recess 50 ' position, the thickness of dielectric 22 is arranged to by producing the thickness that microwave is not propagated in so-called disconnection in fact.Thus, be configured in the propagation of recess 50 locational microwaves of groove 40 sides of a square waveguide 25, propagation with the recess 50 locational microwaves of groove 40 sides that are configured in another square waveguide 25, be disconnected in recess 50 ' position, therefore do not interfere with one another, can prevent from the microwave of groove 40 outputs of a square waveguide 25 with from the interference of the microwave of groove 40 outputs of another square waveguide 25.
Identical with the execution mode described in above-mentioned Fig. 1,2, below the beam 45 of each dielectric 22 of supporting, be respectively arranged with gas ejection ports 46, be used for will regulation gas supply near each dielectric 22 the process chamber 4.With surround each dielectric 22 around mode form gas ejection ports 46 in a plurality of positions, thus, gas ejection ports 46 distributes equably and is configured in above process chamber 4 whole.
Wherein, except dispose a plurality of rectangular dielectrics 22 in the mode that strides across 2 waveguides 25, and below each dielectric 22 formation concavo-convex outside, the structure of the execution mode shown in Fig. 7～9 and above-mentioned Fig. 1,2 described execution modes are roughly the same, therefore omit the repeat specification with spline structure.
Utilize the execution mode shown in Fig. 7～9 etc. ex vivo treatment device 1, by the dielectric 22 of a plurality of tiles of installation on process chamber 4, can be so that each dielectric 22 miniaturizations and lightweight.Therefore, plasma processing apparatus is easy to manufacture, and cost is low, and can improve the counter stress to the area increase of substrate G.In addition, owing on each dielectric 22, be respectively arranged with groove 40, and the area of each dielectric 22 significantly reduces singly, and the last in its lower section recess 50 that forms, 50 ', therefore, can make microwave propagate into each dielectric 22 inside uniformly, can below each dielectric 22 whole, generate plasma expeditiously.Therefore, can in entire process chamber 4, carry out uniform plasma treatment.In addition, because the beam 45 (support unit) of supporting dielectric 22 can be made very carefully, make the following major part of each dielectric 22 be exposed in the process chamber 4, when in process chamber 4, forming electromagnetic field, beam 45 constitutes obstacle hardly, can above substrate G whole, form uniform electric magnetic field, in process chamber 4, generate uniform plasma.
In addition, by be configured in the gas that covers the gas ejection ports 46 ejection regulations below main body 20 whole from distribution, the gas of regulation can be supplied to uniformly the whole surface of substrate G.
Wherein, when making the microwave that imports in the square waveguide 25, when each dielectric 22 was propagated, if groove 40 is big or small insufficient, microwave can not enter in the groove 40 from square waveguide 25 from each groove 40.Yet, in the execution mode shown in Fig. 7～9, in each groove 40, fill fluororesin, the Al that dielectric constant is higher than air
2O
3, dielectric components 40 ' such as quartz.Therefore, even the size of groove 40 is insufficient, but since dielectric components 40 ' exist, can be on the surface so that microwave enters, have the function same with abundant large-sized groove 40.Thus, can propagate into each dielectric 22 from each groove 40 reliably so that import the microwave of square waveguide 25.
In addition, be formed with recess 50,50 ' on below each dielectric 22, therefore, utilize the energy of the microwave of in dielectric 22, propagating, can be at these recesses 50,50 ' medial surface (on the wall) forms the electric field of approximate vertical, generates plasma in its vicinity efficiently.In addition, also can make plasma generate position stability.In addition, be for example 40mm by the transverse width that makes dielectric 22, free space wavelength λ=about 120mm than microwave is narrow, make the length of dielectric 22 long side directions be for example 188mm, wavelength X than the free space of microwave is long, and surface wave is propagated on the long side direction of dielectric 22.In addition, utilize the recess 50 ' at the center that is arranged on each dielectric 22, can prevent the microwave interference each other of propagating from 2 grooves 40.
Wherein, with internal configurations fluororesin, Al are arranged at each square waveguide 25
2O
3, dielectric components 25 ' such as quartz describes for example, but each square waveguide 25 inside also can be hollow.In the situation of square waveguide 25 internal configurations dielectric components 25 ',, can shorten wavelength in pipe λ g with the situation comparison of the hollow that makes square waveguide 25 inside.Thus, only, just can increase the number of groove 40 because can shorten each groove 40 interval each other that disposes side by side along the length direction of square waveguide 25.Therefore, can make dielectric 22 thinner, the piece number that easier increase is provided with can be realized the miniaturization and the lightweight of dielectric 22, further improves the effect of carrying out uniform plasma treatment in entire process chamber 4.
In addition, 7 recesses 50,50 ' being set below dielectric 22, but be arranged on the number of the recess below the dielectric 22 or the shape of recess, can be provided with arbitrarily for example describes.Shape difference that also can each recess.In addition, by below dielectric 22, protuberance being set, also can be below dielectric 22 formation concavo-convex.In a word, if below dielectric 22, be provided with concavo-convex, the wall of formation approximate vertical below dielectric 22, just can utilize the electric field of the energy formation approximate vertical of the microwave of in this vertical wall, propagating, can generate plasma in its vicinity expeditiously, also can make the generation position stability of plasma.
The present invention handles, loses agent applicable to for example CVD and handles.
According to the present invention, by a plurality of dielectrics are set, or on each root of the waveguide more than 2, a plurality of dielectrics are set respectively on many waveguides, each dielectric miniaturization, lightweight can be made, and the counter stress that substrate area is increased can be improved.Therefore, plasma processing apparatus easy to manufacture, and cost is low.In addition, on each of each dielectric, be respectively arranged with the groove more than 1 or 2,, can make microwave propagation reliably on the whole surface of dielectric because the area of each dielectric significantly reduces.In addition,, can above substrate whole, form uniform electric magnetic field, can in process chamber, produce uniform plasma because the support unit of supporting dielectric is thin.
Wherein, if gas ejection ports that supply with to handle gas is set on the support unit of supporting dielectric since between dielectric that need be in process chamber and the substrate configuration process gas to supply with the spray of usefulness first-class, device is oversimplified.In addition, first-class by omitting spray, can shorten the distance of dielectric and substrate, can improve that film forming is handled, etched speed, make equipment miniaturization, reduce to handle the amount of gas.
Claims (15)
1. a plasma processing apparatus makes the microwave that imports waveguide propagate on the dielectric by groove, makes the regulation gaseous plasmaization that supplies in the container handling, and substrate is carried out plasma treatment, it is characterized in that,
Disposes many described waveguides side by side, on each root waveguide, be respectively arranged with a plurality of dielectrics, and each dielectric is provided with the groove more than 1 or 2,
Described a plurality of dielectric is square tabular,
The length of described dielectric short side direction is less than the wavelength of the free space of microwave,
The length of the long side direction of described dielectric is greater than the wavelength of the free space of microwave.
2. plasma processing apparatus as claimed in claim 1 is characterized in that, is respectively arranged with a plurality of grooves on each waveguide of described many and row arrangement, and each groove is provided with dielectric.
3. plasma processing apparatus as claimed in claim 1 is characterized in that, described waveguide is a square waveguide.
4. plasma processing apparatus as claimed in claim 1 is characterized in that, is respectively arranged with around described a plurality of dielectrics regulation gas is supplied to the gas ejection ports more than 1 or 2 in the container handling.
5. plasma processing apparatus as claimed in claim 4 is characterized in that, the support unit of the described a plurality of dielectrics of supporting is provided with described gas ejection ports.
6. plasma processing apparatus as claimed in claim 1 is characterized in that, the long side direction quadrature of the long side direction of described waveguide and described dielectric.
7. a plasma processing apparatus makes the microwave that imports waveguide propagate on the dielectric by groove, makes the regulation gaseous plasmaization that supplies in the container handling, and substrate is carried out plasma treatment, it is characterized in that,
Disposes many described waveguides side by side, on each root of the waveguide more than 2, be respectively arranged with a plurality of dielectrics, and each dielectric is provided with the groove more than 1 or 2,
Described a plurality of dielectric is square tabular,
The length of described dielectric short side direction is less than the wavelength of the free space of microwave,
The length of the long side direction of described dielectric is greater than the wavelength of the free space of microwave.
8. plasma processing apparatus as claimed in claim 7 is characterized in that, dielectric disposes in the mode that strides across the groove that forms respectively on the waveguide more than 2.
9. plasma processing apparatus as claimed in claim 7 is characterized in that, described waveguide is a square waveguide.
10. plasma processing apparatus as claimed in claim 7 is characterized in that, described a plurality of dielectrics are square tabular.
11. plasma processing apparatus as claimed in claim 7 is characterized in that, is respectively arranged with around described a plurality of dielectrics regulation gas is supplied to the gas ejection ports more than 1 or 2 in the container handling.
12. plasma processing apparatus as claimed in claim 11 is characterized in that, the support unit of the described a plurality of dielectrics of supporting is provided with described gas ejection ports.
13. plasma processing apparatus as claimed in claim 7 is characterized in that, the long side direction quadrature of the long side direction of described waveguide and described dielectric.
14. a method of plasma processing makes the microwave that imports waveguide propagate on the dielectric by groove, makes the regulation gaseous plasmaization that supplies in the container handling, and substrate is carried out plasma treatment, it is characterized in that,
Microwave is imported many side by side in the waveguides of configuration, makes microwave pass through groove more than 1 or 2, propagate on a plurality of each dielectric that are arranged on each waveguide,
Described a plurality of dielectric is square tabular,
The length of described dielectric short side direction is less than the wavelength of the free space of microwave,
The length of the long side direction of described dielectric is greater than the wavelength of the free space of microwave.
15. a method of plasma processing makes the microwave that imports waveguide propagate on the dielectric by groove, makes the regulation gaseous plasmaization that supplies in the container handling, and substrate is carried out plasma treatment, it is characterized in that,
Microwave is imported many side by side in the waveguides of configuration, makes microwave pass through groove more than 1 or 2, propagate on a plurality of each dielectric that in each of the waveguide more than 2, are provided with respectively,
Described a plurality of dielectric is square tabular,
The length of described dielectric short side direction is less than the wavelength of the free space of microwave,
The length of the long side direction of described dielectric is greater than the wavelength of the free space of microwave.
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| JP4850592B2 (en) * | 2006-06-14 | 2012-01-11 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| DE112008001130T5 (en) * | 2007-06-11 | 2010-04-29 | Tokyo Electron Ltd. | A plasma processing apparatus, a power supply apparatus, and a method of operating the plasma processing apparatus |
| KR101117150B1 (en) * | 2007-06-11 | 2012-03-13 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | Plasma processing apparatus and plasma processing method |
| JP4705967B2 (en) * | 2008-02-26 | 2011-06-22 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5103223B2 (en) * | 2008-02-27 | 2012-12-19 | 東京エレクトロン株式会社 | Microwave plasma processing apparatus and method of using microwave plasma processing apparatus |
| US20110114600A1 (en) * | 2008-06-11 | 2011-05-19 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| JP5745812B2 (en) * | 2010-10-27 | 2015-07-08 | 東京エレクトロン株式会社 | Plasma processing equipment |
| CN108878243B (en) * | 2017-05-11 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Surface wave plasma processing apparatus |
| CN112911781B (en) * | 2021-01-15 | 2023-10-13 | 成都奋羽电子科技有限公司 | Array type rectangular cavity microwave plasma generator |
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