CN100584973C - Method for preparing Co based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method - Google Patents
Method for preparing Co based single-crystal refractory alloy by employing combination of seed crystal method and screw selecting method Download PDFInfo
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- CN100584973C CN100584973C CN200710179685A CN200710179685A CN100584973C CN 100584973 C CN100584973 C CN 100584973C CN 200710179685 A CN200710179685 A CN 200710179685A CN 200710179685 A CN200710179685 A CN 200710179685A CN 100584973 C CN100584973 C CN 100584973C
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Abstract
The present invention discloses a method adopting a seed crystal method combined with a spiral crystal selecting method to prepare Co-based single crystal superalloy. seed crystal with certain crystal orientation is directionally cut on a Co-based single crystal superalloy body; the seed crystal is put into one end of a spiral crystal selecting machine wax mold; the other end of the spiral crystal selecting machine wax mold is connected with a part wax mold; ceramic refractory slurry is smeared outside the seed crystal, the spiral crystal selecting machine wax mold and the part wax mold; a ceramic mold shell with the seed crystal is prepared through dewaxing and roasting; the ceramic mold shell is cast and molded in a single crystal furnace to prepare Co-based single crystal superalloy materials. The single crystal preparation technology of the present invention can accurately control the crystal orientation and microstructure of single crystal, so as to prepare the Co-based single crystal superalloy materials of good quality.
Description
Technical field
The present invention relates to a kind of Co based single-crystal high-temperature alloy preparation methods, more particularly say, be meant that a kind of combination of adopting seed crystal method and two kinds of technologies of spiral crystal separation method is prepared the method for Co based single-crystal high-temperature alloy.
Background technology
The high development of aeronautical and space technology requires engine to have the higher working efficiency when of having an high regard for, and this just requires engine to have higher working temperature.At present, single crystal super alloy is a critical material of making advanced aero engine turbine blades and turning vane owing to have advantages such as fusing point height, hot strength and creep-resistant property be good.Single crystal super alloy is in the directional freeze process, the direction of growth shows tangible preferred orientation, this preferred orientation often with the certain drift angle of axial existence, the performance of single crystal casting is significantly descended, widespread use for aircraft engine brings disadvantageous effect, so the control of crystalline orientation is particularly important.
The spiral crystal separation method is meant that the superseded gradually crystal grain of the coupling of the preferential growth under unidirectional heat-flux conditions by spiral type crystal growth passage and crystal grain prepares the method for single crystal.
The seed crystal method is meant the seed crystal that cuts certain crystalline orientation on the good single crystal of choosing, and adopts to go out single crystal in the seed crystal face epitaxy, and the crystalline orientation of obtained single crystal is consistent with the crystalline orientation of seed crystal.
The processing method of making the single crystal super alloy blade now in the aircraft industry mainly is the spiral crystal separation method, its monocrystalline success ratio height, but crystal separation method can not be controlled the crystalline orientation and the solidified structure of single crystal super alloy, and mainly is crystalline orientation and solidified structure to the influence factor of monocrystalline mechanical property.Though the seed crystal method can effectively be controlled the crystalline orientation and the solidified structure of monocrystalline, its monocrystalline success ratio is extremely low.
Summary of the invention
The objective of the invention is to propose the method that a kind of Co based single-crystal high-temperature alloy adopts seed crystal method and spiral crystal separation method combined preparation, this compositions, process is by means of accurate control and the spiral crystal separation method high monocrystalline success ratio of seed crystal method to crystalline orientation and solidified structure, and the Co based single-crystal high-temperature alloy that combination makes has and the consistent crystalline orientation of Co based single-crystal high-temperature alloy seed crystal; Prepare the single crystal high-temperature alloy material process combination by two kinds, thus the good single crystal high-temperature alloy material of obtained performance.
The present invention is a kind of method that adopts seed crystal method and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, and this combination process comprises following preparation steps:
The first step, the seed crystal of preparation Co based single-crystal high-temperature alloy;
Orientation cuts out the test block with certain crystalline orientation on Co based single-crystal high-temperature alloy body, and the crystal face of test block is carried out polished finish and surface corrosion processing, obtains Co based single-crystal high-temperature alloy seed crystal;
Polished finish condition: adopt the crystal face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, on polishing machine, carry out polished finish then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2～10min, promptly gets Co based single-crystal high-temperature alloy seed crystal;
Described Co based single-crystal high-temperature alloy is Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al;
Described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 10～50ml hydrofluoric acid and 40～100ml glycerine in every 10ml nitric acid;
Perhaps described etching reagent is made up of hydrochloric acid and hydrogen peroxide, and adds 5～30ml hydrogen peroxide in every 10ml hydrochloric acid;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make spiral crystal selector wax-pattern 2;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make part wax-pattern 3;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
The 4th step extended the crystal face of the Co based single-crystal high-temperature alloy seed crystal 1 that makes in the above-mentioned the first step in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step to the upper edge, and Co based single-crystal high-temperature alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 0.5～10mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 3～20mm in the outside of Co based single-crystal high-temperature alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 120～500 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind roast 5～15h under 800～1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace, temperature to 1300 in the adjusting single crystal growing furnace～1800 ℃, Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al molten metal flows in the ceramic shell mould by sprue gate 4, after 2～30min is waited in insulation; Speed with 0.1～15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to room temperature with the furnace, promptly makes and the make peace Co based single-crystal high-temperature alloy material of good solidified structure of Co based single-crystal high-temperature alloy seed crystal orientation one; The temperature of described molten metal is 1300～1650 ℃.
Description of drawings
Fig. 1 is on the Co based single-crystal high-temperature alloy body＜001〉orientation synoptic diagram.
Fig. 2 is on the Co based single-crystal high-temperature alloy body＜011〉orientation synoptic diagram.
Fig. 3 is on the Co based single-crystal high-temperature alloy body＜111〉orientation synoptic diagram.
Fig. 4 is a wax-pattern model assembling synoptic diagram.
Fig. 5 A is the metallograph of Co based single-crystal high-temperature alloy seed crystal.
Fig. 5 B is the metallograph of the Co based single-crystal high-temperature alloy that makes through the inventive method.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
The present invention is a kind of method that adopts seed crystal method and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, and this combination process comprises following preparation steps:
The first step, the seed crystal of preparation Co based single-crystal high-temperature alloy;
Referring to shown in Figure 1, orientation cuts out and has＜001〉orientation test block on Co based single-crystal high-temperature alloy body, and (001) face of test block is carried out polished finish and surface corrosion is handled, and obtains Co based single-crystal high-temperature alloy seed crystal;
Described (001) face is the face of A, B, C, 4 formation of D;
Polished finish condition: adopt (001) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, on polishing machine, carry out polished finish then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2～10min, promptly gets Co based single-crystal high-temperature alloy seed crystal;
Described etching reagent is nitric acid HNO
3, hydrofluoric acid HF and glycerine C
3H
8O
3Form, and add 10～50ml hydrofluoric acid and 40～100ml glycerine in every 10ml nitric acid;
Perhaps described etching reagent is by hydrochloric acid HCl and hydrogen peroxide H
2O
2Form, and add 5～30ml hydrogen peroxide in every 10ml hydrochloric acid;
Described Co based single-crystal high-temperature alloy is Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make spiral crystal selector wax-pattern 2;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make part wax-pattern 3;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
Referring to shown in Figure 4, the 4th step, (001) of the Co based single-crystal high-temperature alloy seed crystal 1 that makes in the above-mentioned the first step is extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co based single-crystal high-temperature alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 0.5～10mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 3～20mm in the outside of Co based single-crystal high-temperature alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 120～500 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind roast 5～15h under 800～1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace, temperature to 1300 in the adjusting single crystal growing furnace～1800 ℃, Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al molten metal flows in the ceramic shell mould by sprue gate 4, after 2～30min is waited in insulation; Speed with 0.1～15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to room temperature with the furnace, promptly make to have＜001〉orientation and good solidified structure Co based single-crystal high-temperature alloy material.The temperature of described molten metal is 1300～1650 ℃.
In order to prepare the Co based single-crystal high-temperature alloy of different orientation, in the first step of the present invention, can be on Co based single-crystal high-temperature alloy body orientation cut out have＜011〉orientation or＜111〉orientation test block, adopt method same as described above preparation＜011 then〉the Co based single-crystal high-temperature alloy material of orientation and good solidified structure, perhaps＜111〉be orientated and the Co based single-crystal high-temperature alloy material of good solidified structure.
Preparation＜011〉step of orientation and the good Co based single-crystal high-temperature alloy material of solidified structure is:
The first step, the seed crystal of preparation Co based single-crystal high-temperature alloy;
Referring to shown in Figure 2, orientation cuts out and has＜011〉orientation test block on Co based single-crystal high-temperature alloy body, and (011) face of test block is carried out polished finish and surface corrosion is handled, and obtains Co based single-crystal high-temperature alloy seed crystal;
Described (011) face is the face of C, D, E, 4 formation of F;
Polished finish condition: adopt (011) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, on polishing machine, carry out polished finish then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2～10min, promptly gets Co based single-crystal high-temperature alloy seed crystal;
Described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 10～50ml hydrofluoric acid and 40～100ml glycerine in every 10ml nitric acid;
Perhaps described etching reagent is made up of hydrochloric acid and hydrogen peroxide, and adds 5～30ml hydrogen peroxide in every 10ml hydrochloric acid;
Described Co based single-crystal high-temperature alloy is Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make spiral crystal selector wax-pattern 2;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make part wax-pattern 3;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
Referring to shown in Figure 4, the 4th step, (011) of the Co based single-crystal high-temperature alloy seed crystal 1 that makes in the above-mentioned the first step is extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co based single-crystal high-temperature alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 0.5～10mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 3～20mm in the outside of Co based single-crystal high-temperature alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 120～500 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind roast 5～15h under 800～1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace, temperature to 1300 in the adjusting single crystal growing furnace～1800 ℃, Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al molten metal flows in the ceramic shell mould by sprue gate 4, after 2～30min is waited in insulation; Speed with 0.1～15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to room temperature with the furnace, promptly make to have＜011〉orientation and good solidified structure Co based single-crystal high-temperature alloy material.The temperature of described molten metal is 1300～1650 ℃.
Preparation＜111〉step of orientation and the good Co based single-crystal high-temperature alloy material of solidified structure is:
The first step, the seed crystal of preparation Co based single-crystal high-temperature alloy;
Referring to shown in Figure 3, orientation cuts out and has＜111〉orientation test block on Co based single-crystal high-temperature alloy body, and (111) face of test block is carried out polished finish and surface corrosion is handled, and obtains Co based single-crystal high-temperature alloy seed crystal;
Described (111) face is the face of C, D, E, 4 formation of F;
Polished finish condition: adopt (111) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, on polishing machine, carry out polished finish then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2～10min, promptly gets Co based single-crystal high-temperature alloy seed crystal;
Described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 10～50ml hydrofluoric acid and 40～100ml glycerine in every 10ml nitric acid;
Perhaps described etching reagent is made up of hydrochloric acid and hydrogen peroxide, and adds 5～30ml hydrogen peroxide in every 10ml hydrochloric acid;
Described Co based single-crystal high-temperature alloy is Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 60～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make spiral crystal selector wax-pattern 2;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make part wax-pattern 3;
Described wax material is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark;
Referring to shown in Figure 4, the 4th step, (111) of the Co based single-crystal high-temperature alloy seed crystal 1 that makes in the above-mentioned the first step are extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co based single-crystal high-temperature alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 1～10mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 3～20mm in the outside of Co based single-crystal high-temperature alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 120～500 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind roast 5～15h under 800～1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace, temperature to 1300 in the adjusting single crystal growing furnace～1800 ℃, Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al molten metal flows in the ceramic shell mould by sprue gate 4, after 2～30min is waited in insulation; Speed with 0.1～15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to room temperature with the furnace, promptly make to have＜111〉orientation and good solidified structure Co based single-crystal high-temperature alloy material.The temperature of described molten metal is 1300～1650 ℃.
Embodiment 1:
Preparation has＜001〉orientation and the step of the Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material of good solidified structure be:
The first step, the seed crystal of preparation Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy;
Referring to shown in Figure 1, on Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy body orientation cut out have＜001 the orientation test block, and (001) face of test block carried out polished finish and surface corrosion is handled, obtain Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal;
Described (001) face is the face of A, B, C, 4 formation of D;
The polished finish condition: adopt (001) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, (precision instrumentation company limited in Shanghai carries out polished finish on PG-1A) at polishing machine then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 5min, promptly gets Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal;
Described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 30ml hydrofluoric acid and 50ml glycerine in every 10ml nitric acid;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject mould under 75 ℃ temperature condition, and compression moulding under 0.5MPa pressure, make spiral crystal selector wax-pattern; Described wax material is the wax material of the π BKB trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 75 ℃ temperature condition, and compression moulding under 0.5MPa pressure, make part wax-pattern 3; Described wax material is the wax material of the π BKB trade mark;
Referring to shown in Figure 4, the 4th step, (001) of the Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1 that makes in the above-mentioned the first step is extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 5mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 10mm in the outside of Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 140 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind the roast 10h under 1000 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace (German DZG-0.025 N-type waferN growth furnace), regulate in the single crystal growing furnace temperature to 1550 ℃, Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti molten metal (temperature of molten metal is 1300 ℃) flows in the ceramic shell mould by sprue gate 4, after 2min is waited in insulation; Speed with 3mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to 20 ℃ with the furnace, promptly make to have＜001〉orientation and good solidified structure Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material.
It is＜001〉direction that the Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material employing X ray back scattering Laue method of above-mentioned preparation is measured crystalline orientation.
Adopt the Olympus metaloscope that the microtexture of Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti seed crystal is observed, its metallograph is shown in Fig. 5 A; Adopt the Olympus metaloscope that the microtexture of the Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy that makes through the inventive method is observed, its metallograph is shown in Fig. 5 B.By the photo contrast to Fig. 5 A and Fig. 5 B, its microtexture pattern is identical, and visible primary dendritic spacing is identical, and the secondary dendrite pattern is identical, so have good solidified structure.
Adopt the above-mentioned second identical step to the 5th step, to have＜011〉orientation,＜111〉orientation Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal is prepared, the Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy that makes measures crystalline orientation through X ray back scattering Laue method and is respectively＜011〉orientation,＜111〉orientation.
Embodiment 2:
Preparation has＜011〉orientation and the step of the Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material of good solidified structure be:
The first step, the seed crystal of preparation Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy;
Referring to shown in Figure 2, on Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy body orientation cut out have＜011 the orientation test block, and (011) face of test block carried out polished finish and surface corrosion is handled, obtain Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal;
Described (011) face is the face of A, B, C, 4 formation of D;
The polished finish condition: adopt (011) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, (precision instrumentation company limited in Shanghai carries out polished finish on PG-1A) at polishing machine then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2min, promptly gets Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal;
Described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 30ml hydrofluoric acid and 60ml glycerine in every 10ml nitric acid;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 80 ℃ temperature condition, and compression moulding under 3MPa pressure, make spiral crystal selector wax-pattern 2; Described wax material is the wax material of the OH-4 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 100 ℃ temperature condition, and compression moulding under 0.5MPa pressure, make part wax-pattern 3; Described wax material is the wax material of the P-3 trade mark;
Referring to shown in Figure 4, the 4th step, (011) of the Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1 that makes in the above-mentioned the first step is extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 10mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 20mm in the outside of Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 250 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind the roast 12h under 1300 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace (German DZG-0.025 N-type waferN growth furnace), regulate in the single crystal growing furnace temperature to 1650 ℃, Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti molten metal (temperature of molten metal is 1500 ℃) flows in the ceramic shell mould by sprue gate 4, after 10min is waited in insulation; Speed with 15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to 20 ℃ with the furnace, promptly make＜011〉orientation and the good Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material of solidified structure.
It is＜011〉direction that the Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal high-temperature alloy material employing X ray back scattering Laue method of above-mentioned preparation is measured crystalline orientation.
Adopt the Olympus metaloscope that the microtexture of Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti seed crystal is observed, adopt the Olympus metaloscope that the microtexture of the Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy that makes through the inventive method is observed, both microtexture patterns are identical, as seen primary dendritic spacing is identical, the secondary dendrite pattern is identical, so have good solidified structure.
Adopt the above-mentioned second identical step to the 5th step, to have＜001〉orientation,＜111〉orientation Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy seed crystal is prepared, the Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy that makes measures crystalline orientation through X ray back scattering Laue method and is respectively＜001〉orientation,＜111〉orientation.
Embodiment 3:
Preparation has＜111〉orientation and the step of the Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal high-temperature alloy material of good solidified structure be:
The first step, the seed crystal of preparation Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy;
Referring to shown in Figure 3, on Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy body orientation cut out have＜111 the orientation test block, and (111) face of test block carried out polished finish and surface corrosion is handled, obtain Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal;
Described (111) face is the face of A, B, C, 4 formation of D;
The polished finish condition: adopt (111) face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, (precision instrumentation company limited in Shanghai carries out polished finish on PG-1A) at polishing machine then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 6min, promptly gets Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal;
Described etching reagent is that hydrochloric acid and hydrogen peroxide are formed, and adds the 10ml hydrogen peroxide in every 10ml hydrochloric acid;
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 120 ℃ temperature condition, and compression moulding under 10MPa pressure, make spiral crystal selector wax-pattern 2; Described wax material is the wax material of the P-3 trade mark;
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 120 ℃ temperature condition, and compression moulding under 3MPa pressure, make part wax-pattern 3; Described wax material is the wax material of the OH-1 trade mark;
Referring to shown in Figure 4, the 4th step, (111) of the Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal 1 that makes in the above-mentioned the first step are extended in the spiral crystal selector wax-pattern 2 that makes in above-mentioned second step towards the upper edge, and Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal 1 stretches into spiral crystal selector wax-pattern 2 0.5mm is arranged; The upper ends part wax-pattern 3 of spiral crystal selector wax-pattern 2;
Be coated with the thick ceramic fire resistant slurry of extension 5mm in the outside of Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal 1, spiral crystal selector wax-pattern 2 and part wax-pattern 3, under 300 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind the roast 5h under 1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace (German DZG-0.025 N-type waferN growth furnace), regulate in the single crystal growing furnace temperature to 1700 ℃, Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti molten metal (temperature of molten metal is 1650 ℃) flows in the ceramic shell mould by sprue gate 4, after 5min is waited in insulation; Speed with 4mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to 20 ℃ with the furnace, promptly make＜111〉orientation and the good Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal high-temperature alloy material of solidified structure.
It is＜111〉direction that the Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal high-temperature alloy material employing X ray back scattering Laue method of above-mentioned preparation is measured crystalline orientation.
Adopt the Olympus metaloscope that the microtexture of Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti seed crystal is observed, adopt the Olympus metaloscope that the microtexture of the Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy that makes through the inventive method is observed, both microtexture patterns are identical, as seen primary dendritic spacing is identical, the secondary dendrite pattern is identical, so have good solidified structure.
Adopt the above-mentioned second identical step to the 5th step, to have＜001〉orientation,＜011〉orientation Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy seed crystal is prepared, the Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy that makes measures crystalline orientation through X ray back scattering Laue method and is respectively＜001〉orientation,＜011〉orientation.
The present invention adopts the combination process of seed crystal method and spiral crystal separation method to prepare Co based single-crystal high-temperature alloy material not only can obtain high monocrystalline success ratio, can also guarantee simultaneously the controllability of crystalline orientation and solidified structure, make it have good performance, effectively reduce the manufacturing cost of aircraft engine.Therefore, adopt the technology of seed crystal method and spiral crystal separation method combined preparation monocrystalline high-temperature structural material can further satisfy the requirement that the aero gas turbine engine machine develops to high thrust-weight ratio, low-cost direction.
Claims (8)
1, a kind of method that adopts seed crystal method and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy is characterized in that including the following step:
The first step, the seed crystal of preparation Co based single-crystal high-temperature alloy;
Orientation cuts out the test block with certain crystalline orientation on Co based single-crystal high-temperature alloy body, and the crystal face of test block is carried out polished finish and surface corrosion processing, obtains Co based single-crystal high-temperature alloy seed crystal;
Polished finish condition: adopt the crystal face of 150#, 360#, 500#, 1000#, 2000# silicon carbide paper polishing test block, on polishing machine, carry out polished finish then;
The surface corrosion treatment condition: the test block after will polishing is taken out after adopting etching reagent surface treatment 2～10min, promptly gets Co based single-crystal high-temperature alloy seed crystal (1);
Second step, preparation spiral crystal selector wax-pattern;
Wax material is melted the back inject spiral crystal selector mould under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make spiral crystal selector wax-pattern (2);
The 3rd step, preparation part wax-pattern;
Wax material is melted the back inject component die under 40～120 ℃ temperature condition, and compression moulding under 0.5～10MPa pressure, make part wax-pattern (3);
The 4th step, the crystal face of the Co based single-crystal high-temperature alloy seed crystal (1) that makes in the above-mentioned the first step is extended in the spiral crystal selector wax-pattern (2) that makes in above-mentioned second step to the upper edge, and Co based single-crystal high-temperature alloy seed crystal (1) stretches into spiral crystal selector wax-pattern (2) 0.5～10mm is arranged; The upper ends part wax-pattern (3) of spiral crystal selector wax-pattern (2);
Be coated with the thick ceramic fire resistant slurry of extension 3～20mm in the outside of Co based single-crystal high-temperature alloy seed crystal (1), spiral crystal selector wax-pattern (2) and part wax-pattern (3), under 120～500 ℃ of temperature, dewax then, making the ceramic shell mould that has seed crystal behind roast 5～15h under 800～1700 ℃ of temperature;
The 5th step, the ceramic shell mould that makes in above-mentioned the 4th step is put into single crystal growing furnace, temperature to 1300 in the adjusting single crystal growing furnace～1800 ℃, Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al molten metal flows in the ceramic shell mould by sprue gate (4), after 2～30min is waited in insulation; Speed with 0.1～15mm/min moves down crystal pulling, after crystal pulling finishes, takes out after cooling to room temperature with the furnace, promptly makes and the make peace Co based single-crystal high-temperature alloy material of good solidified structure of Co based single-crystal high-temperature alloy seed crystal orientation one;
The temperature of described molten metal is 1300～1650 ℃.
2, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, it is characterized in that: described Co based single-crystal high-temperature alloy is Co-(0～0.6) C-(20～28) Cr-(8～13) Ni-(5～10) W-(0～0.8) Mo-(0～0.5) Ti-(0～2) Al.
3, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, it is characterized in that: described Co based single-crystal high-temperature alloy is Co-0.4C-24.5Cr-10Ni-7W-0.2Mo-1Al-0.2Ti single crystal super alloy, Co-0.5C-25Cr-9.5Ni-8W-0.2Mo-1Al-0.2Ti single crystal super alloy or Co-0.45C-26Cr-9.5Ni-8W-0.4Mo-1Al-0.3Ti single crystal super alloy.
4, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy is characterized in that: described crystalline orientation be meant Co based single-crystal high-temperature alloy body＜001 the orientation,＜011 the orientation or＜111 the orientation;
Described crystal face is meant (001) face, (011) face or (111) face; Described (001) face is the face of A, B, C, 4 formation of D; (011) face is the face of C, D, E, 4 formation of F; (111) face is the face of D, E, 3 formation of G.
5, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy is characterized in that: the described wax material in second step and the 3rd step is the wax material of the π BKB trade mark, the wax material of the OH-1 trade mark, the wax material of the OH-2 trade mark, the wax material of the OH-3 trade mark, the wax material of the OH-4 trade mark, the wax material of the P-3 trade mark, the wax material of the B-1 trade mark or the wax material of the π C50-50 trade mark.
6, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, it is characterized in that: described etching reagent is that nitric acid, hydrofluoric acid and glycerine are formed, and adds 10～50ml hydrofluoric acid and 40～100ml glycerine in every 10ml nitric acid.
7, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, it is characterized in that: described etching reagent is made up of hydrochloric acid and hydrogen peroxide, and adds 5～30ml hydrogen peroxide in every 10ml hydrochloric acid.
8, the method for employing seed crystal method according to claim 1 and spiral crystal separation method combined preparation Co based single-crystal high-temperature alloy, it is characterized in that: the Co based single-crystal high-temperature alloy that makes is identical with the primary dendritic spacing of Co based single-crystal high-temperature alloy seed crystal, and the secondary dendrite pattern is identical.
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| CN102019354B (en) * | 2010-12-27 | 2012-11-07 | 沈阳黎明航空发动机(集团)有限责任公司 | Directional solidification method of ultra-thin and long shrouded blade |
| FR3000910B1 (en) * | 2013-01-17 | 2015-05-01 | Snecma | PROCESS FOR MANUFACTURING A PIECE BY LOST WAX FOUNDRY AND DIRECTED COOLING |
| CN103464690B (en) * | 2013-08-26 | 2016-12-07 | 西安交通大学 | A kind of manufacture method of ceramic mold of monocrystal turbine blade |
| CN103894539B (en) * | 2014-03-31 | 2016-04-20 | 东方电气集团东方汽轮机有限公司 | A kind of method preparing monocrystalline spiral crystal selector wax-pattern |
| CN104846441B (en) * | 2015-05-28 | 2017-09-08 | 北京航空航天大学 | A kind of cutting preparation method cast with Crystal Nickel-based Superalloy seed crystal |
| CN105603260A (en) * | 2015-12-24 | 2016-05-25 | 宁波天阁汽车零部件有限公司 | High-temperature-resistant turbocharger turbine wheel |
| CN106872317A (en) * | 2017-02-20 | 2017-06-20 | 中国电子产品可靠性与环境试验研究所 | The preprocess method and measuring method of soft magnetic ferrite crystallite dimension measurement |
| CN108620538B (en) * | 2017-03-22 | 2019-11-01 | 中国科学院金属研究所 | A kind of high-throughput preparation method of high-temperature alloy material |
| CN107745093B (en) * | 2017-12-06 | 2023-06-06 | 安徽应流航源动力科技有限公司 | Fine casting module and casting method for preparing nickel-based single crystal guide vane with precisely controllable crystal orientation by utilizing fine casting module |
| CN113070454A (en) * | 2021-03-16 | 2021-07-06 | 贵阳航发精密铸造有限公司 | Casting device and method for non-preferred orientation single crystal guide hollow blade |
| CN113084088B (en) * | 2021-03-30 | 2022-11-01 | 贵阳航发精密铸造有限公司 | Casting method of duplex single crystal guide blade with precisely controlled service direction crystal orientation |
| CN112974729B (en) * | 2021-05-11 | 2021-08-10 | 中国航发北京航空材料研究院 | Method for combining twin-crystal blade wax molds |
| CN112974732B (en) * | 2021-05-12 | 2021-07-30 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy by combining solid solution columnar crystal with crystal selection |
| CN114622270B (en) * | 2022-03-11 | 2024-02-09 | 中国航发北京航空材料研究院 | Method for preparing single crystal superalloy test bar |
| CN117401992A (en) * | 2023-10-26 | 2024-01-16 | 西安交通大学 | Single-crystal superalloy-carbon fiber reinforced ceramic matrix composite connecting piece and preparation method thereof |
-
2007
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Non-Patent Citations (2)
| Title |
|---|
| 定向凝固技术制取高温合金单晶铸件的思考. 刘健，李理，曾斌，彭广威.湖南工程学院学报，第15卷第2期. 2005 |
| 定向凝固技术制取高温合金单晶铸件的思考. 刘健，李理，曾斌，彭广威.湖南工程学院学报，第15卷第2期. 2005 * |
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