CN100583353C - Method for preparing field emission display - Google Patents
Method for preparing field emission display Download PDFInfo
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- CN100583353C CN100583353C CN200410027405A CN200410027405A CN100583353C CN 100583353 C CN100583353 C CN 100583353C CN 200410027405 A CN200410027405 A CN 200410027405A CN 200410027405 A CN200410027405 A CN 200410027405A CN 100583353 C CN100583353 C CN 100583353C
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- field emission
- emission display
- carbon nano
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- tube
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
- H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Abstract
A method for preparing field emission display device for solving beam divergence, which contains 1, distributing carbon nano tube the conductive cathode layer on insulated substrate, 2, forming in quadrature insulation layer on conductive cathode layer, 3, forming conductive grid on said insulation layer, 4, vertically standing the carbon nano tube on the conductive cathode layer, 5, packaging fluorescent screen and sealing side wall, said grid has double action of emitting and focusing electron to emitting electron and controlling electron emission direction.
Description
[technical field]
The present invention relates to a kind of preparation of flat-panel screens, relate in particular to a kind of preparation method of carbon nano-tube field emission display.
[background technology]
Field Emission Display is after cathode ray tube (CRT) display and liquid crystal (LCD) display, the most potential emerging technology of future generation.With respect to existing display, Field Emission Display has that display effect is good, the visual angle is big, power consumption is little and advantage such as volume is little, especially based on the Field Emission Display of carbon nano-tube, promptly carbon nano-tube field emission display (CNT-FED) more and more comes into one's own in recent years.
Carbon nano-tube is a kind of new carbon, it has extremely excellent electric conductivity, and almost long-pending (tip end surface is long-pending littler near the tip end surface of theoretical limit, its internal field more concentrates, and field enhancement factor is bigger), so carbon nano-tube is known best field emmision material, it has extremely low unlatching electric field (about 2 volts/micron), can transmit great current density, and the emission current stabilizer pole, thereby be fit to very much do the emitter of Field Emission Display.Increasingly mature along with the carbon nano tube growth technology, the research of carbon nano-tube field emission display has obtained a series of impressive progresses.
Generally speaking, the structure of Field Emission Display can be divided into diarch and triple-pole type.So-called diarch promptly includes the field emitting structural of anode and negative electrode, and this structure be owing to need apply high voltage, and uniformity and electronics emission be difficult to control, and drive circuit cost height is not suitable for the practical application of high resolution display basically.The triple-pole type structure then is to improve on the diarch basis, and increasing has grid to control the electronics emission, can be implemented under the low voltage condition and send electronics, and the electronics emission is accurately controlled by grid easily.
As shown in figure 11, at present typical triple-pole type field emission apparatus, it comprises a substrate 101, be formed at the insulating barrier 102 in the substrate 101, be formed at the grid 103 on the insulating barrier 102, wherein insulating barrier 102 and grid 103 are formed with perforation 104 and pass for emitting electrons, are formed with the radiated element 105 of emitting electrons in perforation 104 bottoms, and it also is a negative electrode herein.In addition, the position that keeps at a certain distance away above grid 103 is anode 106 and fluorescence coating 107.During use, apply different voltages at anode 106, grid 103 and negative electrode, electronics can be launched from radiated element 105, and passes perforation 104, quicken to arrive anode 106 and fluorescence coating 107 then under the electric field action that anode 106 forms, fluorescence excitation layer 107 sends visible light.General anode 106 voltages are several kilovolts, and the voltage of grid 103 is about 100 volts.The field emission display device of this structure, electrons emitted has most electronics 110 and 111 deflections that can take place than wide-angle owing to be subjected to the electric field action of both sides grid 103, gets to fluorescence coating 107 zone in addition.And get to radiated element 105 over against the electronics of the center in zone seldom, so just cause the pixel that shows bigger, be difficult to adapt to high-resolution plane show; Even the sub-fraction electronics can be got to the zone of fluorescence coating 107, also be that to get to the electronics of fringe region many, beat at the electronics of middle position fewly, cause picture point central authorities dark, the ill effect that the edge is bright.
See also Figure 12, for addressing the above problem, people such as the researcher Hironori Asai of Toshiba company propose a kind of improved structure the 6th, 445, No. 124 in the United States Patent (USP) of bulletin on September 3rd, 2002, mainly comprise a substrate 211, one cathode layer 203 is formed in the substrate 211, and insulating barrier 202 and grid 201 orders are formed on the cathode layer 203, and are formed with perforation, on the bottom of boring a hole, cathode layer 203, be formed with electron emission layer 207, in order to emitting electrons.Its improvements are that said structure need meet L/S 〉=1, and wherein S is the diameter of perforation, and L is that electronics penetrates the beeline that arrives grid 201, that is to say the beeline of electron emission layer 207 and grid 201.This structure is because L needs bigger, the distance that is the electron transmitting terminal of electron emission layer 207 and grid 201 is bigger, making grid 201 need very high voltage can form enough electric field actions transfers to electronics from electron emission layer 207, so be unfavorable for reducing emission voltage, also can improve the power consumption of this device; In addition, because electron emission layer 207 is positioned at insulating barrier 202 bottoms, electronic launching point is far away apart from grid 201, the very most layer 202 that is insulated of the electronics of launching stops absorption (this point also is the reason that this structure can reduce the horizontal proliferation electronics), so the effective rate of utilization of emitting electrons is very low, unavoidably can influence the display brightness of image.
[summary of the invention]
For solving the field transmitting display apparatus grid emission voltage height of prior art, and because the grid around the electron emitter is launched generation diffusion technical problem to electronics, the present invention's purpose is to provide a kind of preparation method of Field Emission Display, Field Emission Display obtained by this method can be in emitting electrons under the low-voltage, can effectively control the direction of emitting electrons, electron beam is focused on corresponding pixel region, reduce the width of beam spot, realize that high-definition picture shows.
For achieving the above object, the invention provides a kind of preparation method of Field Emission Display, it comprises the following steps: step 1, carbon nano-tube is distributed on the conductive cathode layer of dielectric base surface formation; Step 2, quadrature forms insulating barrier on the conductive cathode layer; Step 3 forms conductive grid on described insulating barrier; Step 4 stands on the described conductive cathode layer carbon nano-tube on the conductive cathode layer that is distributed in described conductive grid both sides; Step 5, encapsulation phosphor screen and sealing sidewall.
Compared with prior art, the inventive method has following advantage: carbon nano-tube centers on the grid at center and forms, this structure can make grid have the effect of emitting electrons and focused electron simultaneously, just the electric field of grid can change the electron beam travel direction, the spot that electron beam is got on the phosphor screen diminishes, thereby realizes that high-resolution plane shows.
[description of drawings]
Fig. 1 to Fig. 6 is each step schematic diagram of Field Emission Display preparation method embodiment of the present invention.
Fig. 7 is the emitting electrons principle schematic of the Field Emission Display for preparing of the inventive method.
Fig. 8 to Figure 10 is the schematic diagram of the difformity structure insulating barrier that adopts of the present invention.
Figure 11 is the structure and the electronics emission schematic diagram of prior art triple-pole type Field Emission Display.
Figure 12 is a United States Patent (USP) the 6th, 445, the field emission apparatus structural representation of No. 124 exposure.
[embodiment]
Below in conjunction with Figure of description and specific embodiment embodiments of the present invention are described in detail.
At first see also Fig. 6, it is the schematic diagram of the Field Emission Display 1 of the embodiment of the invention, comprise the negative electrode 12 that is formed on substrate of glass 10 surfaces, press the insulating barrier of putting on negative electrode 12 13 perpendicular to negative electrode 12 length directions, be formed on the grid 14 on the insulating barrier 13, uprightly be distributed in the carbon nano-tube 16 on the negative electrode 12 of insulating barrier 13 both sides, be formed in fluorescence coating 19 on the anode 18 at the correspondence position that keeps at a certain distance away above the grid 14, wherein anode 18 is to adhere to the surface that is formed on transparency glass plate 17 faces cathode 12.
Above-mentioned negative electrode 12 is by electric conducting material, as ITO (indium tin oxide) conducting film or metal level make rectangular or banded, be formed on the substrate of glass 10; Obviously, when a plurality of negative electrode 12 is arranged, can parallel to each otherly be formed on substrate of glass 10 surfaces.
Insulating barrier 13 is to be made by insulating material, for example glass.
The aspect ratio insulating barrier 13 low certain distances of carbon nano-tube 16, promptly the top of carbon nano-tube 16 is positioned at a distance, grid 14 below, to avoid negative electrode 12 and grid 14 short circuits; But the height of carbon nano-tube 16 itself does not have any restriction, and, the distance of its top and grid 14 does not have similar United States Patent (USP) the 6th, 445,124 scope restriction, promptly the top of carbon nano-tube 16 can be near grid 14 (but not contacting), consider that undue close grid 14 might produce short circuit, so the distance of the top of carbon nano-tube 16 and grid 14 should be moderate, promptly under the situation that does not influence electronics 20 emissions, for reducing cut-in voltage, can be as far as possible near grid 14.
Need to prove in addition, in fact the height of carbon nano-tube 16, diameter are very little, and usually exist with the form of carbon nano-tube bundle, single-root carbon nano-tube shown in the figure 16 only be for simple, be convenient to explanation, so, can not therefore limit the scope of the invention.
Above-mentioned anode 18 supports by the spaced-apart sidewalls 15 of insulation, and is spaced apart with negative electrode 12, grid 14 and carbon nano-tube 16, and is evacuated after the sealing, forms an inner space.
Preferably, the shape of insulating barrier 13 is wedge shape, i.e. the bottom width maximum that contacts with negative electrode 12 of insulating barrier 13, and the end face width minimum that contacts with grid 14, the width from this bottom surface to this section of end face dwindles gradually.
Please together referring to Fig. 1 to Fig. 6, the preparation method of Field Emission Display of the present invention comprises the following steps:
A) go out hydrophilic negative electrode 12 in substrate of glass 10 surface preparation earlier;
B) then at the hydrophobic photoresist 11 of substrate of glass 10 surface-coated one decks, and the photoresist 11 on negative electrode 12 surfaces is removed, made negative electrode 12 reveal (as shown in Figure 1) with the photoetching process of standard;
C) carbon nano-tube is dissolved in organic solvent, it is standby to be mixed with carbon nano-tube solution after ultrasonic dispersion;
D) with the above-mentioned substrate of glass of handling well 10 vertical immersions in the carbon nano-tube solution for preparing, make carbon nano-tube stick to hydrophilic negative electrode 12 surfaces;
D) use eluant, eluent (for example acetone) with photoresist 11 flush awaies, be evenly distributed with one deck carbon nano-tube (as shown in Figure 2, wherein carbon nano-tube is not shown) on negative electrode 12 surfaces like this.
Step 3 forms grid 14 on described insulating barrier 13 tops; Grid 14 generally is a conductivity good metal material, and for example silver, copper etc. only are that example illustrates here with silver.The method that forms grid 14 can stamp one deck silver paste on insulating barrier 13 tops with silk screen print method, and sintering forms grid 14 (as shown in Figure 4) then.
Step 4 erects the carbon nano-tube 16 on negative electrode 12 surfaces that are distributed in described grid 14 both sides; This step can have accomplished in many ways: can be affixed on cathode surface with the adhesive tape (figure does not show) of viscosity, the end that above-mentioned steps two forms be insulated layer 13 cover push down, the other end exposes outside part carbon nano-tube and near the tacky surfaces that is adhered to adhesive tape of part carbon nano-tube one ends the insulating barrier 13, the pull-up adhesive tape will lodge originally in carbon nano-tube 16 pull-ups on negative electrode 12 surfaces then, make it stand upright on negative electrode 12 surfaces substantially; Perhaps act on carbon nano-tube 16, make it stand upright on negative electrode 12 surfaces substantially by highfield.The result who obtains as shown in Figure 5, these upright carbon nano-tube 16 just can be used as electron emitter.
Step 5, encapsulation phosphor screen and sidewall 15.Phosphor screen comprises transparent glass plate 17, anode 18 and fluorescence coating 19.Through centering, exhaust (vacuumizing), Field Emission Display 1 (as shown in Figure 6) is finished in encapsulation at last.
See also Fig. 6 again, when Field Emission Display 1 uses, apply different voltages respectively and give anode 18, (generally speaking, the voltage of anode 18 is at 1000 volts thousands of volts extremely for grid 14 and negative electrode 12, the voltage of grid 14 is about tens volts to 100 volts, negative electrode 12 is ground connection or no-voltage), under the electric field action of grid 14, electronics 20 emits from carbon nano-tube 16 tops, and under the electric field action of anode 18, pass the inner space and quicken to bombard to fluorescence coating 19 and send visible light.In of the present invention the emitting structural, the position of grid 14 is corresponding to each pixel center of fluorescence coating 19,16 of electron emitter carbon nano-tube lay respectively at grid 14 both sides, and this structure can be described as central grid structure, are the crucial parts of Field Emission Display of the present invention.Like this, grid 14 not only plays the effect that electronics " is extracted " from carbon nano-tube 16 tops, also play the effect of focused beam, be that the electronics 20 that carbon nano-tube 16 is launched is subjected to grid 14 electric field actions of central authorities, focus on the central authorities of fluorescence coating 19, the spot of getting on the phosphor screen 19 diminishes, thereby realizes that electronics bombards correctly, accurately in desired location, can realize that the plane of high-resolution shows.
For the concrete structure of further understanding the Field Emission Display that the present invention obtains, realize principle and other characteristics that electron beam focuses on, describe in further detail below.
Seeing also Fig. 7, is the principle schematic of Field Emission Display emitting electrons of the present invention.For ease of explanation, only carbon nano-tube 16 electrons emitted are explained here, in fact there are many such carbon nano-tube respectively in grid 14 both sides, and effect and orbit that their electrons emitted are subjected to are similar.Basically, the electronics that carbon nano-tube 16 emits is subjected to electric field action can be divided into four classes, i.e. external electrical 21, internal electron 22, the electronics of being intercepted and captured 23 and the electronics 24 that is reflected.The electronics of the inceptive direction offset from center grid 14 when so-called external electrical 21 is promptly launched, this electron-like is subjected to the electric field action of grid 14 to the deflection of the center of central grid, focus on the position at a distance of fluorescence coating 19 centre distance R at last, electron beam was not got to the more close center, position (dotted line is represented among the figure) of phosphor screen 19 when this distance R had central grid 14 than prior art.The grid 14 of the inceptive direction deflection central authorities when internal electron 22 is emission, and be subjected to grid 14 further deflection of electric field action, but do not have deflection to get to the electronics of insulating barrier 13 or grid 14, this electron-like can be got to the position of fluorescence coating 19 with respect to the opposite side of carbon nano-tube 16 at last, and the center of the more close phosphor screen 19 in position of phosphor screen 19 is got to than external electrical 21 in this position, promptly less than distance R.Electronics 23 and the internal electron 22 intercepted and captured are similar, also are the grids 14 that deflects into central authorities, but because the angle of deflection is bigger, directly beat at grid 14, are intercepted and captured by grid 14, can not beat on fluorescence coating 19.And the bigger electronics of deflection promptly is the electronics 24 that is reflected, this electron-like deflection angle maximum, and directly deflection is beaten on insulating barrier 13, is insulated the centre that focuses on fluorescence coating 19 after layer 13 reflects.From top analysis as can be seen, the width of finally getting to the beam spot of fluorescence coating 19 is 2R.
Because the specific position of grid 14 and the structure of Field Emission Display of the present invention, determined the present invention that above-mentioned four electron-likes are had the good focusing function, most electronics all can focus on the middle section of fluorescence coating 19, and the electronics of beating edge region is less relatively.In addition,, promptly strengthen the effect of 14 pairs of electron beams of grid of central authorities, weaken the effect of 18 pairs of electron beams of anode, also can further regulate the focusing effect of electronics by regulating the voltage of grid 14 and anode 18.Therefore, can increase the voltage of grid 14, or the voltage of reduction anode 18 achieves the goal; The distance that also can increase grid 14 and anode 18 achieves this end.In addition, increase the thickness of the grid 14 of central authorities, then its ability of intercepting and capturing wide-angle deflection electronics 23 is strong more.
The insulating barrier 13 of the foregoing description is wedge shape, and bottom width is bigger, and the end face width is less.The shape of grid 14 also is wedge shape, and the width of bottom surface is identical with insulating barrier 13 end face width, and the end face width minimum of grid 14.Certainly, the shape of grid 14 also can be cuboid or other suitable shape.
Please together referring to Fig. 8, Fig. 9 and Figure 10, Field Emission Display of the present invention can also adopt non-wedge shape, other difform insulating barrier and grid structures.The cross section of the insulating barrier 43 that Fig. 8 adopts is rectangles, and the width of insulating barrier 43 is identical with grid 44, and carbon nano-tube 46 is distributed in both sides.The cross section of the insulating barrier 53 that Fig. 9 adopts also is a rectangle, but its width is littler than grid 54, and carbon nano-tube 56 is distributed in grid 54 both sides.The cross section of the insulating barrier 66 that Figure 10 adopts is shapes that the two ends width is big up and down, intermediate width reduces gradually, and carbon nano-tube 66 is positioned at both sides, grid 64 below.The variation of said structure can cause the tracks of electrons emitted bundle and above-mentioned wedge structure different, but not depart from the scope of the present invention.
Claims (14)
1. the preparation method of a Field Emission Display is characterized in that comprising the following steps: step 1, carbon nano-tube is distributed on the conductive cathode layer of dielectric base surface formation; Step 2, quadrature forms insulating barrier on the conductive cathode layer; Step 3 forms conductive grid on described insulating barrier; Step 4 stands on the described conductive cathode layer carbon nano-tube on the conductive cathode layer that is distributed in described conductive grid both sides; Step 5, encapsulation phosphor screen and sealing sidewall.
2. the preparation method of Field Emission Display according to claim 1, it is step by step following to it is characterized in that described step 1 comprises: the conductive cathode laminar surface that the carbon nano-tube slurry directly is coated in the dielectric base surface for preparing.
3. the preparation method of Field Emission Display according to claim 1, it is step by step following to it is characterized in that described step 1 comprises: form hydrophilic conductive cathode layer in the dielectric base surface preparation; At the hydrophobic photoresist of dielectric base surface-coated one deck, and remove the photoresist of conductive cathode laminar surface with photoetching process; The preparation carbon nano-tube solution is standby; The above-mentioned dielectric base of handling well is immersed in the carbon nano-tube solution for preparing, make carbon nano-tube stick to hydrophilic conductive cathode laminar surface; The remaining photoresist of flush away.
4. the preparation method of Field Emission Display according to claim 1 is characterized in that the thickness of the length of described carbon nano-tube less than insulating barrier.
5. the preparation method of Field Emission Display according to claim 1 is characterized in that described insulating barrier is that glass material is made.
6. the preparation method of Field Emission Display according to claim 5 is characterized in that described insulating barrier is to utilize silk screen print method that glass paste is printed on surface of insulating layer, forms through oversintering again.
7. the preparation method of Field Emission Display according to claim 1 is characterized in that described insulating barrier is a wedge structure, the bottom width maximum that it contacts with the conductive cathode layer, the end face width minimum that contacts with grid.
8. the preparation method of Field Emission Display according to claim 1 is characterized in that described insulating barrier is a strip.
9. the preparation method of Field Emission Display according to claim 1 is characterized in that described conductive grid is by silk screen print method silver paste to be printed on the insulating barrier top, forms through oversintering again.
10. the preparation method of Field Emission Display according to claim 1, it is step by step following to it is characterized in that described step 4 comprises: be affixed on the conductive cathode laminar surface with adhesive tape, the carbon nano-tube that the pull-up adhesive tape will lodge originally at the conductive cathode laminar surface stands on the conductive cathode laminar surface.
11. the preparation method of Field Emission Display according to claim 1, it is step by step following to it is characterized in that step 4 comprises: produce highfield and act on described carbon nano-tube, make carbon nano-tube stand on the conductive cathode laminar surface under electric field action.
12. the preparation method of Field Emission Display according to claim 1 is characterized in that the conductive cathode layer comprises a conductive film.
13. the preparation method of Field Emission Display according to claim 12 is characterized in that described conductive film comprises the ITO conducting film.
14. the preparation method of Field Emission Display according to claim 1 is characterized in that described phosphor screen comprises transparency carrier, anode and fluorescence coating.
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| CN200410027405A CN100583353C (en) | 2004-05-26 | 2004-05-26 | Method for preparing field emission display |
| US11/107,256 US7473154B2 (en) | 2004-05-26 | 2005-04-15 | Method for manufacturing carbon nanotube field emission display |
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| CN200410027405A CN100583353C (en) | 2004-05-26 | 2004-05-26 | Method for preparing field emission display |
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Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7629604B2 (en) * | 2005-11-10 | 2009-12-08 | Schlumberger Technology Corporation | Nano-based device and method |
| CN101110308B (en) * | 2006-07-19 | 2011-05-04 | 清华大学 | Field emission cathode manufacturing method |
| CN101400198B (en) * | 2007-09-28 | 2010-09-29 | 北京富纳特创新科技有限公司 | Surface heating light source, preparation thereof and method for heat object application |
| CN101409962B (en) * | 2007-10-10 | 2010-11-10 | 清华大学 | Surface heat light source and preparation method thereof |
| CN101409961B (en) * | 2007-10-10 | 2010-06-16 | 清华大学 | Surface heat light source, preparation method thereof and method for heating object using the same |
| CN101499389B (en) * | 2008-02-01 | 2011-03-23 | 鸿富锦精密工业（深圳）有限公司 | Electronic emitter |
| US20100122980A1 (en) * | 2008-06-13 | 2010-05-20 | Tsinghua University | Carbon nanotube heater |
| US20100126985A1 (en) * | 2008-06-13 | 2010-05-27 | Tsinghua University | Carbon nanotube heater |
| CN101880035A (en) | 2010-06-29 | 2010-11-10 | 清华大学 | Carbon nanotube structure |
| CN103426718B (en) * | 2013-03-25 | 2016-08-10 | 上海显恒光电科技股份有限公司 | Flat-panel radiating light source 3D print system and light source thereof |
| US10264627B2 (en) * | 2016-12-08 | 2019-04-16 | Goodrich Corporation | Adjusting CNT resistance using perforated CNT sheets |
| US10424455B2 (en) | 2017-07-22 | 2019-09-24 | Modern Electron, LLC | Suspended grid structures for electrodes in vacuum electronics |
| US10658144B2 (en) * | 2017-07-22 | 2020-05-19 | Modern Electron, LLC | Shadowed grid structures for electrodes in vacuum electronics |
| US10811212B2 (en) | 2017-07-22 | 2020-10-20 | Modern Electron, LLC | Suspended grid structures for electrodes in vacuum electronics |
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| JP2000251614A (en) | 1999-02-24 | 2000-09-14 | Futaba Corp | Field emission element and manufacture thereof |
| JP2001101977A (en) | 1999-09-30 | 2001-04-13 | Toshiba Corp | Vacuum micro device |
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Non-Patent Citations (2)
| Title |
|---|
| 碳纳米管的薄膜场发射. 张兆祥等.真空科学与技术，第23卷第1期. 2003 |
| 碳纳米管的薄膜场发射. 张兆祥等.真空科学与技术，第23卷第1期. 2003 * |
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| CN1705060A (en) | 2005-12-07 |
| US7473154B2 (en) | 2009-01-06 |
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