CN100578370C - Method for producing aligning mark - Google Patents
Method for producing aligning mark Download PDFInfo
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- CN100578370C CN100578370C CN200610075276A CN200610075276A CN100578370C CN 100578370 C CN100578370 C CN 100578370C CN 200610075276 A CN200610075276 A CN 200610075276A CN 200610075276 A CN200610075276 A CN 200610075276A CN 100578370 C CN100578370 C CN 100578370C
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- alignment mark
- exposure machine
- photomask
- exposure
- substrate
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Abstract
A method for generating align mark on a baseboard comprises that providing a photo mask defining at least one align mark group which comprises a first align mark available for a first exposure machine and a second align mark available for a second exposure machine, and generating the first and the second align marks on the baseboard via the photo mask on the first exposure machine, wherein the first align mark is most near the second align mark.
Description
Technical field
The present invention relates to a kind of method that produces alignment mark with and photomask, particularly relate to a kind of generation can be applicable to two kinds of different exposure machines alignment mark method with and photomask.
Background technology
Among the field of semiconductor technology, photoetching process has been one of step indispensable in the manufacturing process; Known as industry, photoetching process comprises following several steps: painting photoresist above substrate, utilize photomask that the photoresist on the substrate is exposed with the circuit pattern (circuit pattern) of definition electronic product correspondence, so can carry out ensuing etching process, to form required circuit pattern to the substrate under the photoresist; Certainly, finishing of an electronic product must repeat for several times above-mentioned step, with liquid crystal panel as an example, just there are five photomasks must carry out photoetching, finish grid layer (gate electrode respectively, GE), and semiconductor layer (semiconductor, SE), source (source drain, SD), and contact layer (contact hole, CH), pixel electrode layer (pixelelectrode, PE) circuit pattern of five different layers.
Known as industry, before carrying out aforesaid exposure process, the necessary elder generation of photomask is align substrates correctly, and circuit pattern is projected on the substrate very accurately.And alignment mark (alignment mark) as its name suggests, is the alignment function that is used for supporting between aforementioned lights mask and the substrate.In general, the photomask of aforementioned corresponding grid layer (ground floor), not only has the pairing circuit pattern of electronic product, also has the alignment mark that pre-defines, therefore when carrying out the exposing operation of grid layer, alignment mark just can the while be formed on the substrate via the photomask of grid layer; And also had the alignment mark that pre-defines on a plurality of photomasks afterwards (for example each photomask of aforementioned corresponding semiconductor layer, source, contact layer, pixel electrode layer), therefore before the exposing operation of carrying out semiconductor layer, source, contact layer, pixel electrode layer, utilize the alignment mark above the photomask to remove to aim at the alignment mark that before had been formed at above the substrate, so just can guarantee the degree of accuracy of exposing operation.
Yet alignment mark is formed position on substrate, can directly have influence on the result of whole technology, sees also Fig. 1 at this, and Fig. 1 has illustrated the corresponding relation of alignment mark with the pattern of exposure of diverse location.At first, for the exposing operation of grid layer (ground floor), in practical operation, the exposure of ground floor unavoidably has the phenomenon (as curve among the figure 100) of distortion.
Desire to be exposed to precalculated position 110 at this hypothesis grid layer photomask defined alignment mark, but as previously mentioned, because the exposure of ground floor has the phenomenon of distortion, so alignment mark can contract in more than precalculated position 110 in position that substrate forms; Therefore when thereafter several layers of photomask will expose, just the alignment mark on the photomask can fall within the outside of alignment mark on the substrate, the situation that contracts in this circuit pattern (as dotted line among Fig. 1 150) that causes exposure to come out also has.
On the other hand, if hypothesis grid layer photomask defined alignment mark predetermined exposure is in the precalculated position 120, but also because the phenomenon of distortion, alignment mark 120 can comparatively extend out in the position that substrate forms, therefore when thereafter several layers of photomask will expose, alignment mark on the photomask just can fall within the inboard of alignment mark on the substrate, and this circuit pattern (as dotted line among Fig. 1 160) that causes exposure to come out also has the situation that extends out.
Hence one can see that, and the diverse location of alignment mark can cause error (as the residual quantity D among Fig. 1) for the formation position of circuit pattern; But because the photoetching process of this five roads photomask is finished by same exposure machine, for uniform machinery, five road photomasks utilize one group of identical alignment mark to expose, and the circuit pattern that comes out that therefore exposes does not have too big error yet.
But each liquid crystal panel manufacturer uses two kinds of different exposure machines to carry out the technology of liquid crystal panel sometimes.Because the consideration of speed of production, the dealer will consider with two kinds of exposure machines and mixes the mode of taking, next life the production fluid crystal panel.For instance, the dealer can utilize first kind of exposure machine (such as Canon exposure machine) to finish several photomask earlier, uses second kind of exposure machine (such as Nikon exposure machine) to finish remaining several photomask again.
See also Fig. 2 at this, Fig. 2 is the synoptic diagram of existing grid layer photomask 200.Because the specification difference of two kinds of exposure machines, its alignment mark is different, and the alignment mark of corresponding different exposure machines, and its putting position is difference to some extent also; Therefore when the grid layer photomask exposes, just the alignment mark of different exposure machines can be formed at the diverse location of glass substrate.As previously mentioned, when mixing, takes when making liquid crystal panel by the double-exposure machine, preceding several photomask is to expose according to first alignment mark 210, remaining photomask then is to expose according to second alignment mark 220, because the putting position of different exposure machine alignment marks differs, the circuit pattern that exposure is come out just can have corresponding error; In other words, circuit pattern may have different overlapping (overlap) situations.
Summary of the invention
Therefore one of fundamental purpose of the present invention method of being to provide a kind of alignment mark that can be applicable to two kinds of different exposure machines with and photomask, to solve the problems of the prior art.
According to one embodiment of the invention, the invention provides a kind of method that produces alignment mark (alignment mark) at a substrate, this method comprises: a photomask is provided, this photomask defines at least one aligning token groups, and this alignment mark group comprises spendable one first alignment mark of one first exposure machine and spendable one second alignment mark of one second exposure machine; And in this first exposure machine, utilize this photomask on this substrate, to produce this first alignment mark and this second alignment mark; Wherein this first alignment mark haply (substantially) be close to this second alignment mark.
In the alignment mark group of the present invention, the alignment mark of corresponding two machines is close to mutually, therefore when carrying out the technology of liquid crystal panel, can be owing to the distance between alignment mark is excessive, and cause the excessive situation of circuit pattern overlapping (overlap) skew, in other words, the present invention can reduce the exposure error of circuit pattern, improve yield rate, also make to mix and take two machines to make the mode of liquid crystal panel more feasible.
Description of drawings
Fig. 1 has illustrated the corresponding relation of alignment mark with the pattern of exposure of diverse location.
Fig. 2 is the synoptic diagram of existing grid layer photomask.
Fig. 3 is the synoptic diagram of grid layer photomask of the present invention.
Fig. 4 is the partial enlarged drawing of alignment mark group shown in Figure 3.
The simple symbol explanation
| The precalculated position | 110、120 | Circuit pattern | 150、160、230、330 |
| |
210、310 | |
220、320 |
| The |
200、300 | The |
340 |
| The zone, |
311、321 | Residual quantity | D |
Embodiment
In the following description book, the technology of also utilizing liquid crystal panel is as one embodiment of the invention.See also Fig. 3, Fig. 3 is the synoptic diagram of grid layer photomask 300 of the present invention.It comprises circuit pattern 330 and a plurality of alignment mark group 340 of liquid crystal panel, wherein each alignment mark group 340 also comprises one first alignment mark 310, one second alignment mark 320, this first alignment mark 310 is the alignment mark of Canon exposure machine, this second alignment mark 320 is the alignment mark of Nikon exposure machine, and in each alignment mark group 340, this first alignment mark 310 all is to be close to mutually with this second alignment mark 320.
Because this first alignment mark 310 of the present invention is close to mutually with this second alignment mark 320, therefore when grid layer photomask 300 carried out exposure technology, first alignment mark 310 of this on glass substrate also can be close to this second alignment mark 320.This first alignment mark 310 can cause different overlapping (overlap) situation of circuit pattern with the gap of these second alignment mark, 320 putting positions; When being close to mutually with this second alignment mark 320, can make this first alignment mark 310 and the spacing of this second alignment mark 320 reach minimum as this first alignment mark 310 of the present invention.When photomask must be when different exposure machines be carried out exposing operation, because the position of this first alignment mark 310 and this second alignment mark 320 is the same position on the counterpart substrate almost, the circuit pattern that exposure is come out does not have too big error yet, therefore, the present invention can effectively reduce overlapping (overlap) error of circuit pattern.
In addition, see also Fig. 4, Fig. 4 is the partial enlarged drawing of alignment mark group 340 shown in Figure 3.In general, when carrying out alignment function, for the zone, island (island) in the alignment mark or window zone (window) aims at; Therefore as shown in Figure 4, in the alignment mark group 340 of the present invention, the zone 311, island of this first alignment mark 310 is tightly adjacent with the zone, island 321 of mark 320, such configuration can be so that the distance of mark 310 and mark 320 reaches minimum, and, therefore can not have influence on the carrying out of each road photomask alignment function thereafter because zone 311, the island of this first alignment mark 310 is not overlapped with the zone, island 321 of this second alignment mark 320 yet.Certainly, the present invention does not limit the adjacent mode of two patterns, in other words, if desire utilizes the window zone to aim at, so also can be with the window zone of two marks with adjacent being configured mutually, so corresponding variation is also without prejudice to spirit of the present invention.
Though among the disclosure formerly, all with the technology of liquid crystal panel as one embodiment of the invention; Yet the present invention does not limit applied field; Various electronic products all can utilize spirit of the present invention, mix and to take two kinds of different exposure machines and make it, therefore, glass substrate also is one embodiment of the invention, but not restriction of the present invention, present invention may also be implemented on the general wafer (wafer), so corresponding variation also belongs to category of the present invention.
In addition, various exposure machine all can utilize spirit of the present invention to be mixed and take, and makes required electronic product, and so corresponding variation also belongs to category of the present invention.
Than prior art, in the alignment mark group of the present invention, the alignment mark of corresponding double-exposure machine is close to mutually, therefore when carrying out the technology of liquid crystal panel, can be owing to the distance between alignment mark is not excessive, and cause the excessive situation of circuit pattern overlapping (overlap) skew, in other words, the present invention can reduce the exposure error of circuit pattern, improves yield rate, also makes to mix to take the double-exposure machine to make the mode of liquid crystal panel more feasible.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (7)
1. method that on substrate, produces alignment mark, this method comprises:
Photomask is provided, and this photomask defines at least one alignment mark group, and this alignment mark group comprises spendable first alignment mark of first exposure machine and spendable second alignment mark of second exposure machine; And
In this first exposure machine, utilize this photomask on this substrate, to produce this first alignment mark and this second alignment mark;
Wherein this first alignment mark is close to this second alignment mark.
2, the method for claim 1, wherein this first exposure machine and this second exposure machine are different types of exposure machine.
3. the method for claim 1, wherein this photomask defines a plurality of alignment mark groups, and this first alignment mark in defined all the alignment mark groups of this photomask all is close to this second alignment mark.
4. the method for claim 1, wherein this substrate is a glass substrate.
5. method as claimed in claim 4, wherein this glass substrate is applicable to liquid crystal panel.
6. the method for claim 1, wherein this first exposure machine is the Canon exposure machine, and this first alignment mark alignment mark that is the Canon exposure machine.
7. the method for claim 1, wherein this second exposure machine is the Nikon exposure machine, and this second alignment mark alignment mark that is the Nikon exposure machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610075276A CN100578370C (en) | 2006-04-18 | 2006-04-18 | Method for producing aligning mark |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610075276A CN100578370C (en) | 2006-04-18 | 2006-04-18 | Method for producing aligning mark |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101059660A CN101059660A (en) | 2007-10-24 |
| CN100578370C true CN100578370C (en) | 2010-01-06 |
Family
ID=38865830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200610075276A Expired - Fee Related CN100578370C (en) | 2006-04-18 | 2006-04-18 | Method for producing aligning mark |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100578370C (en) |
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2006
- 2006-04-18 CN CN200610075276A patent/CN100578370C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN101059660A (en) | 2007-10-24 |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100106 Termination date: 20200418 |