CN100576488C - A kind of device for clamping wafer - Google Patents
A kind of device for clamping wafer Download PDFInfo
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- CN100576488C CN100576488C CN200710121040A CN200710121040A CN100576488C CN 100576488 C CN100576488 C CN 100576488C CN 200710121040 A CN200710121040 A CN 200710121040A CN 200710121040 A CN200710121040 A CN 200710121040A CN 100576488 C CN100576488 C CN 100576488C
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- module
- clamping wafer
- pedestal
- insulating barrier
- wafer
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Abstract
The invention discloses a kind of being used at the device for clamping wafer of semiconductor machining/processing procedure by means of the fixing processed device of electrostatic attraction.This device for clamping wafer comprises insulating barrier and pedestal, and described processed device places on the described insulating barrier, and described pedestal has two-stage step at least, and described insulating barrier places on the upper level step of described pedestal.This device for clamping wafer also comprises and increases module, the described module that increases is arranged on the step of one-level at least under the described upper level step, in order to increasing the height of this one-level step, thereby dwindle the distance between described plane, insulating barrier upper surface place and described this plane, one-level step upper surface place.Device for clamping wafer provided by the invention can promote that plasma evenly distributes, and can reduce the difference of the processing speed of processed device central area and fringe region, and then improves the uniformity of processing.
Description
Technical field
The present invention relates to microelectronics technology, employed a kind of device for clamping wafer in semiconductor machining/processing procedure.
Background technology
In integrated circuit (IC) process for making, particularly in the technical processs such as plasma etching (ETCH), physical vapor deposition (PVD), chemical vapor deposition (CVD), in order to fix, support and transmit wafer processed devices such as (Wafer), avoid processed device to occur moving or inconsistent phenomenon, often use electrostatic chuck (Electro Static Chuck is called for short ESC).
Electrostatic chuck utilizes electrostatic attraction to fix processed devices such as wafer, and it can be divided into coulomb and two types of Johnson-Rahbek.Because electrostatic chuck is to adopt the mode of electrostatic attraction rather than traditional mechanical system to fix processed devices such as wafer, therefore, its can reduce in the traditional mechanical mode because of mechanical reasons such as pressure, collision to the damages that can not repair that processed device caused such as wafers, and reduce the particle contamination that produces because of mechanical collision.In addition, adopt electrostatic chuck can also increase effective working (finishing) area of processed devices such as wafer, and processed devices such as electrostatic chuck and wafer are contacted fully, thereby help carrying out heat conduction more.
Existing electrostatic chuck generally includes insulating barrier and pedestal.At present, insulating barrier adopts ceramic material (AL usually
2O
3, ALN etc.) process, or form with the form manufacturing of ceramic spraying.Buried the DC electrode layer by modes such as sintering or sprayings in the insulating barrier, electrostatic chuck utilizes the electrostatic attraction that produces between this DC electrode layer and the wafer to fix processed devices such as wafer.Pedestal adopts metallic aluminium to process usually, in order to the supports insulative layer.Pedestal also is used for importing radio-frequency power supply (RF), so that form the RF bias voltage between electrostatic chuck and wafer.
This electrostatic chuck disposes temperature control device (Chiller), and the pipeline of this temperature control device is connected with pedestal, to realize the temperature control to electrostatic chuck.Yet this temperature control method can only carry out temperature control to electrostatic chuck integral body, and can not realize the subregion accurate temperature controlling, so also just can not satisfy higher technological requirement, thereby have certain limitation.
In order to overcome above-mentioned deficiency, satisfy higher technological requirement, people have proposed a kind of novel electrostatic chuck with double-heater, and are applied to semiconductor machining/treatment facilities such as etching machine of 12 inches.This kind electrostatic chuck has inner ring heater and outer two circle heaters, the power that changes inside and outside circle heater can carry out temperature control to the zone corresponding to inside and outside circle heater on the insulating barrier, and then the etch rate of adjustment center wafer and edge, thereby the etching homogeneity of raising wafer.So-called etch rate is meant the speed of removing the wafer surface material in the etching process.So-called etching homogeneity is meant the consistency of manufacturing property in the etching process, and the performance unanimity that this had both comprised entire wafer comprises the performance unanimity between same batch or each batch again.In the semiconducter process process, particularly in the high density plasma etch process, very strict to the requirement of etching homogeneity.
See also Fig. 1, in existing classicalpiston etching machine, the top of reative cell 2 is provided with quartz window 1, bottom in the reative cell 2 is equipped with electrostatic chuck 4, basic ring 5 and focusing ring 6 are installed on the electrostatic chuck 4 successively, (that is the card top of electrostatic chuck 4) sticking has wafer 3 above focusing ring 6.The part that coincides with wafer 3 bottom edge on the focusing ring 6 downwards (promptly, bottom to reative cell 2) recessed, make to have certain clearance between wafer 3 and the focusing ring 6, do not contact each other, thereby guarantee fully to contact between wafer 3 and the electrostatic chuck 4 that exceeds described recess.
In the actual process process, 2 inside, entire reaction chamber are full of plasma.The uniformity of plasma distribution is having a strong impact on the uniformity of etching.Therefore, need to guarantee the uniformity of plasma distribution in the reative cell 2.As everyone knows, electrostatic chuck article on plasma body distributes and plays crucial effects.
As shown in Figure 2, existing typical electrostatic chuck mainly comprises insulating barrier 7 and aluminium base 8.Wherein, insulating barrier 7 is with pottery (AL
2O
3) be main material, process by the mode of sintering and obtain.And this insulating barrier 7 is embedded with the DC electrode layer, and electrostatic chuck utilizes the electrostatic attraction that produces between the processed devices such as this DC electrode layer and wafer to fix processed devices such as wafer.Be simplified illustration, hereinafter the upper surface with this insulating barrier 7 is called the B face.
Aluminium base 8 is set to the step-like structure of two-stage, and upper level step is provided with aforementioned dielectric layer 7.Be simplified illustration, upper surface that hereinafter will next stage step is called the C face.On the C face, dispose aforementioned basic ring 5 and focusing ring 6 from bottom to top successively.And, be provided with the water channel that links to each other with temperature control device in the inside of aluminium base 8, to realize temperature control to electrostatic chuck.
Need to prove, be upper level step with that one-level step that is placed with insulating barrier on the pedestal herein, be next stage step with that one-level step (that is that one-level step of base bottom) away from insulating barrier.In other words, herein with that side that is placed with insulating barrier on the pedestal for " on ", be D score away from that side of insulating barrier.
In existing electrostatic chuck, basic ring 5 and focusing ring 6 normal nonmetallic materials (for example, the quartzy or pottery (AL that adopt
2O
3)) make, and there is bigger spacing between B face and the C face, that is to say that the distance between the upper surface of the next stage step of aluminium base 8 and the upper surface of insulating barrier 7 is bigger.Such structure is unfavorable for forming at the edge of electrostatic chuck big RF bias voltage, thereby has a strong impact on processing (for example etching) speed of processed devices such as wafer 3 in its edge.
In addition, owing to there is focusing ring 6, behind the plasma to be excited, plasma to the area just above of focusing ring 6 (promptly, regional A shown in Figure 1) assembles, make like this and spare with plasma distribution density unevenness, and then influence processing (for example etching) uniformity of processed devices such as wafer 3 at wafer 3 zone lines in the plasma distribution density at wafer 3 fringe region A places.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of device for clamping wafer, it can promote that plasma evenly distributes, and can reduce the difference of the processing speed of processed device central area such as wafer and fringe region, and then improves the uniformity of processing.
For this reason, the invention provides a kind of device for clamping wafer, be used in semiconductor machining/processing procedure by means of the fixing processed device of electrostatic attraction, described device for clamping wafer comprises insulating barrier and pedestal, described processed device places on the described insulating barrier, described pedestal has two-stage step at least, and described insulating barrier places on the upper level step of described pedestal.This device for clamping wafer also comprises and increases module, the described module that increases is arranged on the step of one-level at least under the described upper level step, in order to increasing the height of this one-level step, thereby dwindle the distance between described plane, insulating barrier upper surface place and described this plane, one-level step upper surface place.
Wherein, the described module that increases can be one-body molded with described pedestal; Also can with the independent machine-shaping respectively of described pedestal, and cooperatively interact and link together.
Wherein, the described module that increases is a circulus, and connects together securely with described pedestal.
Wherein, the described diameter that increases module is less than or equal to the diameter of the next stage step of described pedestal.
Wherein, the described diameter that increases module is less than or equal to the diameter of that one-level step at its place.
Wherein, described cross section of increasing module is rectangle or is stair-stepping structure.
Wherein, described module and the described pedestal of increasing adopts identical materials to make.Preferably, described module and the described pedestal of increasing adopts metallic aluminium and obtains through the processing of persulfuric acid hard anodizing.
Wherein, described base configuration has basic ring and focusing ring, the shape and size of described basic ring and described to increase module suitable, and place described increasing on the module, described focusing ring places on the described basic ring.
Because device for clamping wafer provided by the invention is to have increased to increase module on the basis of existing pedestal, promptly, on the step of one-level at least under the upper level step of existing pedestal, be provided with and increase module, this height sum that increases module and its place step is inevitable greater than the original height of its place step, therefore, set up this and increase the height that module has been equivalent to increase this one-level step, thereby can dwindle distance between plane, insulating barrier upper surface place and described this plane, one-level step upper surface place.For example, be equivalent to reduce face C shown in Figure 2 to the distance between the face B.Like this, will help reducing the difference between processing (for example, the etching) speed of processing (for example, the etching) speed in the processed device edge zones such as wafer on this device for clamping wafer and central area, thereby improve the uniformity of processing.
In addition, device for clamping wafer provided by the invention increases module by setting up, the RF bias voltage that produces in processed device edge places such as wafers is increased, in other words, set up and increase module and can enlarge such area, that is, in this area, device for clamping wafer can produce bigger RF bias voltage.Thereby, set up and increase module and will help improving in the fringe region of processed devices such as wafer and the plasma distribution situation of central area, promote that plasma evenly distributes, thereby further improve the uniformity of the processing (for example, etching) of processed devices such as wafer.
Description of drawings
Fig. 1 is the principle schematic of typical plasma etching machine in the prior art;
Fig. 2 is the end view of the electrostatic chuck in the plasma etching machine shown in Figure 1;
Fig. 3 is the end view of the device for clamping wafer of first embodiment of the invention;
Fig. 4 is the phantom of device for clamping wafer shown in Figure 3;
Fig. 5 is the cutaway view of the device for clamping wafer of second embodiment of the invention.
Embodiment
For making those skilled in the art person understand technical scheme of the present invention better, device for clamping wafer provided by the invention is described in detail below in conjunction with accompanying drawing.
See also Fig. 3, the device for clamping wafer in the first embodiment of the invention comprises aluminium base 9 and insulating barrier 10.Wherein, aluminium base 9 and insulating barrier 10 employed rapidoprints are similar to aforementioned prior art, do not repeat them here.
In the present embodiment, insulating barrier 10 is embedded with equally in order to produce the DC electrode layer of electrostatic attraction.Be simplified illustration, hereinafter the upper surface with this insulating barrier 10 is called face D.
Aluminium base 9 is in order to supports insulative layer 10.It is set to have three grades of step-like structures, and in other words, the aluminium base 9 in the present embodiment is to have increased the one-level step on the basis of aforementioned aluminium base 8 shown in Figure 2 again.Be simplified illustration, hereinafter the upper surface with this step is called face E, and the upper surface of aluminium base 9 next stage steps is called face F.
As can be seen from Figure 3, face D and face F correspond respectively to face B and the face C among Fig. 2, and the height of face E is between face D and face F, and the diameter of face E is also between face D and face F.
Three grades of step-like structures that it is pointed out that in the present embodiment to be adopted are based on a large amount of tests and selected, and the existence of face E to go up existing threaded mounting hole with influence surface C not be design premises.The height of face E and diameter also are to be based upon on the basis of a large amount of engineer testings and to determine.
See also Fig. 4, the device for clamping wafer 13 with three grades of step-like structures disposes the basic ring 12 suitable with its shape and structure.Particularly, the section of this basic ring 12 is inverted "L" shaped, and is suitable with the shape and size of the middle one-level step of device for clamping wafer 13, and is buckled on this grade step.The top of basic ring 12 is provided with focusing ring 11, focuses in order to the article on plasma body.
In the actual course of processing, processed wafer 3 places the top of device for clamping wafer 13.The part that coincides with wafer 3 bottom edge on the focusing ring 11 is recessed down, makes there is certain clearance between wafer 3 and the focusing ring 11 that like this, wafer 3 will not contact focusing ring 11, and only is to contact fully with device for clamping wafer 13.
By Fig. 3 and first embodiment shown in Figure 4 as can be known, increase face E (promptly, set up the one-level step) be equivalent to reduce the upper level step of aluminium base 9 of device for clamping wafer 13 and the distance between next upper level step, in other words, be equivalent to reduce face C shown in Figure 2 to the distance between the face B, the inferior upper level step that has just reduced aluminium base 9 is to the distance between the focusing ring 11.Like this, will help reducing the edge etch rate of wafer 3 and the difference between the etch rate of central area, thereby improve the etching homogeneity of wafer 3.
In addition, increase the RF bias voltage increase that face E can make device for clamping wafer 13 produce in face E institute corresponding position, in other words, increase face E and can enlarge such area, that is, in this area, device for clamping wafer 13 can produce bigger RF bias voltage.Thereby increase face E helps improving the plasma distribution situation in wafer 3 fringe regions and wafer 3 central areas, promotes that plasma evenly distributes, thereby further improves the etching homogeneity of wafer 3.
See also Fig. 5, the aluminium base of the device for clamping wafer 13 in the second embodiment of the invention has two stage steps shape structure shown in Figure 2,, only has upper level step and next stage step (time upper level step just) that is.Be provided with insulating barrier (figure does not show) on upper level step, be simplified illustration, hereinafter the upper surface with this insulating barrier is called face D, and the upper surface of next stage step is called face F.In the actual course of processing, processed wafer 3 places on the face D.
Device for clamping wafer 13 in the present embodiment also face F is provided with aluminium base ring 14.This aluminium base ring 14 is circular, and section is a rectangle.The bottom surface of aluminium base ring 14 places on the face F, and its medial surface is near the facade of the upper level step of device for clamping wafer 13, and aluminium base like this ring 14 just is placed on the device for clamping wafer 13.
In fact, this aluminium base ring 14 being set is equivalent to set up the one-level step for device for clamping wafer 13.As for the material of this aluminium base ring 14, can adopt and the aluminium base identical materials, that is, adopt metallic aluminium and obtain this aluminium base ring 14 through the processing of persulfuric acid hard anodizing.As for the height and the diameter of this aluminium base ring 14, be similar to height and the diameter of face E among aforementioned first embodiment, do not repeat them here.As for the shape and structure of this aluminium base ring 14, also can be designed to section is stair-stepping structure.
Device for clamping wafer 13 in the present embodiment can be continued to use existing electrostatic chuck, as long as the aluminium base ring 14 of configuration sets up step for aluminium base in addition, just can realize aforementioned goal of the invention.This mode simple and flexible can be set up the step with difformity and structure for aluminium base by the shape and the structure that change aluminium base ring 14 according to actual needs.
This shows that the device for clamping wafer that previous embodiment provided is realized goal of the invention by set up step on the aluminium base of existing electrostatic chuck.As for the mode of setting up step, can be to make this step and aluminium base one-body molded, first embodiment for example; Or passing through described in the embodiment two disposed aluminium base ring and sets up step as described above.In addition, device for clamping wafer provided by the invention need not be confined to three grades of step-like structures described in the previous embodiment, but also can adopt more multistage step-like structure, as long as can realize aforementioned goal of the invention.
Certainly, device for clamping wafer provided by the invention need not be confined to set up the mode of step, but also can adopt such structure,, increases the height of the next stage step of existing electrostatic chuck that is, in other words, raises the height of face C.Like this, can reduce the distance between face C and the face D equally, and then realize aforementioned goal of the invention.
Be understandable that, no matter be to adopt the mode of setting up step described in aforementioned first and second embodiment, still adopt the mode of any one-level shoulder height under the upper level step that increases electrostatic chuck, so all quite set up one or more modules that increase.Certainly, this increase module can be one-body molded with the pedestal of device for clamping wafer; Also can with the independent machine-shaping respectively of described pedestal, and cooperatively interact and link together, for example, can adopt the socket connected mode among aforementioned second embodiment.In other words, the increase of being mentioned among the present invention/set up and increase module, can be understood as one of the following situation that comprises at least: one, when the pedestal of processing and manufacturing device for clamping wafer provided by the invention, the height of at least one-level step of the pedestal that makes coming of new under its upper level step is greater than the height of corresponding one-level step in the electrostatic chuck that prior art provided; Its two, when processing and manufacturing device for clamping wafer provided by the invention, be the one or more modules of configuration in addition of the step of one-level at least under the upper level step of existing pedestal, and itself and pedestal cooperated together such as ring-type.
As for the diameter that increases module, can be less than or equal to the diameter of the next stage step of described pedestal; The diameter that also can be less than or equal to that one-level step at its place.
In addition, device for clamping wafer provided by the invention not only is confined to be applied in the etching apparatus, but also can be applied to other semiconductor machining/treatment facilities.In addition, processed device also not only is confined to wafer, but also can be other devices that can be processed/be handled by above-mentioned semiconductor machining/treatment facility.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. device for clamping wafer, be used in semiconductor machining/processing procedure by means of the fixing processed device of electrostatic attraction, described device for clamping wafer comprises insulating barrier and pedestal, described processed device places on the described insulating barrier, described pedestal has two-stage step at least, described insulating barrier places on the upper level step of described pedestal, it is characterized in that also comprising and increase module, the described module that increases is arranged on the step of one-level at least under the described upper level step, in order to increasing the height of this one-level step, thereby dwindle the distance between described plane, insulating barrier upper surface place and described this plane, one-level step upper surface place.
2. device for clamping wafer according to claim 1 is characterized in that, describedly increases module and described pedestal is one-body molded.
3. device for clamping wafer according to claim 1 is characterized in that, describedly increases the independent machine-shaping respectively of module and described pedestal, and cooperatively interacts and link together.
4. device for clamping wafer according to claim 3 is characterized in that, the described module that increases is a circulus, and connects together securely with described pedestal.
5. device for clamping wafer according to claim 1 is characterized in that, the described diameter that increases module is less than or equal to the diameter of the next stage step of described pedestal.
6. device for clamping wafer according to claim 1 is characterized in that, the described diameter that increases module is less than or equal to the diameter of that one-level step at its place.
7. device for clamping wafer according to claim 1 is characterized in that, described cross section of increasing module is rectangle or is stair-stepping structure.
8. device for clamping wafer according to claim 1 is characterized in that, described module and the described pedestal of increasing adopts identical materials to make.
9. device for clamping wafer according to claim 8 is characterized in that, described module and the described pedestal of increasing adopts metallic aluminium and obtain through the processing of persulfuric acid hard anodizing.
10. according to any described device for clamping wafer in the claim 1 to 9, it is characterized in that described base configuration has basic ring and focusing ring, the shape and size of described basic ring and described to increase module suitable, and place described increasing on the module, described focusing ring places on the described basic ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710121040A CN100576488C (en) | 2007-08-29 | 2007-08-29 | A kind of device for clamping wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710121040A CN100576488C (en) | 2007-08-29 | 2007-08-29 | A kind of device for clamping wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101378028A CN101378028A (en) | 2009-03-04 |
| CN100576488C true CN100576488C (en) | 2009-12-30 |
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|---|---|---|---|
| CN200710121040A Active CN100576488C (en) | 2007-08-29 | 2007-08-29 | A kind of device for clamping wafer |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104810317B (en) * | 2014-01-23 | 2017-10-27 | 无锡华润上华科技有限公司 | Wafer deep groove etching method |
| CN108538744B (en) * | 2017-03-01 | 2021-03-02 | 北京北方华创微电子装备有限公司 | Chuck device and semiconductor processing equipment |
| CN110055508B (en) * | 2019-05-30 | 2021-11-23 | 武汉华星光电技术有限公司 | Base plate fixing device |
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2007
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| Publication number | Publication date |
|---|---|
| CN101378028A (en) | 2009-03-04 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Beijing, Jiuxianqiao, East Road, No. 1, M5 floor, South floor, floor, layer two Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |