CN100572269C - The device and method of oriented growth of carbon nanometer tube array - Google Patents
The device and method of oriented growth of carbon nanometer tube array Download PDFInfo
- Publication number
- CN100572269C CN100572269C CNB2005101015594A CN200510101559A CN100572269C CN 100572269 C CN100572269 C CN 100572269C CN B2005101015594 A CNB2005101015594 A CN B2005101015594A CN 200510101559 A CN200510101559 A CN 200510101559A CN 100572269 C CN100572269 C CN 100572269C
- Authority
- CN
- China
- Prior art keywords
- metal sheet
- tube array
- oriented growth
- nanometer tube
- carbon nanometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention discloses a kind of device of oriented growth of carbon nanometer tube array, and it comprises: a reaction chamber; One has direct supply anodal and negative pole; Be arranged on first metal sheet that links to each other with the positive pole of described power supply of this reaction chamber inside; One second metal sheet that links to each other and parallel with the negative pole of described power supply with first metal sheet; And a substrate that is between this first metal sheet and second metal sheet, it is relative with this second metal sheet that this substrate is used to form the surface of catalyzer.In addition, the present invention also provides a kind of method that adopts this device oriented growth of carbon nanometer tube array.Carbon nano tube array grows of the present invention, its cost is lower and be easy to realize the oriented growth of carbon nano pipe array.
Description
[technical field]
The present invention relates to technical field of nano material, especially about a kind of device and method of oriented growth of carbon nanometer tube array.
[background technology]
Carbon nanotube is the seamless nano level cylinder that is curled and form by certain helicity by the single or multiple lift graphite flake, because the confinement effect that radially is subjected to nanoscale of carbon nanotube is the One-dimensional Quantum line of standard, it can show many quantum mechanical effects; And along with the variation of carbon nanotube helicity, it can present metallicity or semiconductive etc.Just because the unique property of carbon nanotube makes it have broad application prospects at each ambit.
The method of traditional carbon nano tube growth has arc discharge method, laser evaporation method and chemical Vapor deposition process etc.Arc discharge method is to utilize geseous discharge that electric energy is changed into heat energy and luminous energy, makes the solid carbon source evaporation carry out structural rearrangement then and comes carbon nano-tube.The laser evaporation method is to utilize the laser light illumination solid carbon source to be translated into gaseous carbon, and grows into carbon nanotube under catalyst action.Chemical Vapor deposition process can be described as catalytic pyrolysis method again, and it is to be carbon source with labile hydro carbons organism, utilizes the transition metal element to produce carbon atom as the catalyst decomposes carbon source and forms carbon nanotube.
Arc discharge method and laser evaporation method all are difficult to direct growth and become directed carbon nano pipe array.
Chemical Vapor deposition process can be realized the oriented growth of carbon nano pipe array.The chemical Vapor deposition process of existing oriented growth of carbon nanometer tube has plasma-assisted chemical vapour deposition method and thermal chemical vapor deposition method.Yet the plasma-assisted chemical vapour deposition method needs extra the use to produce isoionic vacuum system, causes it to have higher cost; Thermal chemical vapor deposition method has the growth area and maximize and the low advantage of cost, but it requires the reaction conditions strictness, has the unmanageable shortcoming of reaction parameter, so its growth fraction that will realize directional carbon nanotube array is difficult.
Therefore, be necessary to provide a kind of cost lower and be easy to realize the device and method of oriented growth of carbon nanometer tube array.
[summary of the invention]
Below will provide a kind of device and method of oriented growth of carbon nanometer tube array with embodiment.
A kind of device of oriented growth of carbon nanometer tube array comprises a reaction chamber; One has direct supply anodal and negative pole; Be arranged on first metal sheet that links to each other with the positive pole of described power supply of this reaction chamber inside; One second metal sheet that links to each other and parallel with the negative pole of described power supply with first metal sheet; And a substrate that is between this first metal sheet and second metal sheet, it is relative with this second metal sheet that this substrate is used to form the surface of catalyzer.
And a kind of method of oriented growth of carbon nanometer tube array is formed on catalyzer in the substrate; This substrate is arranged between first metal sheet and second metal sheet, and the surface of this substrate formation catalyzer is relative with this second metal sheet; Connect direct supply, make between this first metal sheet and second metal sheet and produce electric field; The reacting by heating chamber; And feeding carbon source gas, reaction generates directional carbon nanotube array.
Compared with prior art, the device and method of above-mentioned oriented growth of carbon nanometer tube array, adopt two metal sheets to produce electric field, under electric field action, carbon nanotube can form dipole, it is identical with the direction of electric field that the dipole orientation needs, impel then carbon nanotube along with the direction of an electric field growth, and be easy to the carbon nano pipe array that obtains to align; And the process of this oriented growth of carbon nanometer tube array only needs the extra electric field that increases, and its required cost is lower; The device and method of therefore above-mentioned oriented growth of carbon nanometer tube array has and is easy to realize oriented growth of carbon nanometer tube array and lower-cost advantage.
[description of drawings]
Fig. 1 is the first embodiment synoptic diagram of the device of oriented growth of carbon nanometer tube array.
Fig. 2 is that first metal sheet and the second metal sheet position of first embodiment concerns synoptic diagram.
Fig. 3 is the second embodiment synoptic diagram of the device of oriented growth of carbon nanometer tube array.
[embodiment]
Below in conjunction with accompanying drawing the embodiment of the invention is described in further detail.
See also Fig. 1, it is the device first embodiment synoptic diagram of oriented growth of carbon nanometer tube array, and it comprises that a reaction chamber 1, has the direct supply 2 of positive pole 3 and negative pole 4, and one first metal sheet 5 that is arranged on this reaction chamber 1 inside; One second metal sheet 6; An and substrate 8.Wherein this first metal sheet 5 electrically connects with the positive pole 3 usefulness leads 7 of described power supply 2; This second metal sheet 6 electrically connects with the negative pole 4 usefulness leads 7 of described power supply 2, and parallels with this first metal sheet 5; This substrate 8 is between this first metal sheet 5 and second metal sheet 6, and this substrate 8 to be used to form the substrate surface 9 of catalyzer relative with this second metal sheet 6.
When this first metal sheet 5 and 6 energisings of second metal sheet, it can produce electric field.When the reaction carbon nano tube array grows, owing to there is electric field to exist, polarization can take place and produce dipole in carbon nanotube; If dipole is not towards being on the same direction with electric field, then electrical forces can make the dipole moment that rotates, cause dipole final form identical with the electric field equidirectional towards; Therefore carbon nanotube can be impelled along the direction growth identical with electric field, and is easy to the carbon nano pipe array that obtains to align.
See also Fig. 2, substrate 8 is between this first metal sheet 5 and one second metal sheet 6, according to carbon nano tube array grows towards requiring, rotatable or this first metal sheet 5 of this substrate 8 and second metal sheet 6 rotate simultaneously, make the line of centres of this first metal sheet 5 and second metal sheet 6 and substrate surface 9 θ at angle, and obtaining the electric field of different directions, this angle θ span is 0 °＜θ＜90 °; Preferably, the line of centres of this first metal sheet 5 and second metal sheet 6 is by the center of this substrate surface 9.For example, when the reaction carbon nano tube array grows requires perpendicular to this substrate surface 9, the line of centres of this first metal sheet 5 and second metal sheet 6 and substrate surface 9 angulation θ can be 90 °, so that this first metal sheet 5 and second metal sheet 6 can form the electric field perpendicular to substrate surface 9.
The material of first metal sheet 5 and second metal sheet 6 and the conductive material of this lead 7 are the higher material of fusing point, specifically be that this material can not be melted under the required temperature of carbon nano tube growth, it can be one or several alloy of gold (fusing point is 1064 ℃), copper (fusing point is 1083 ℃), platinum (fusing point is 1772 ℃), palladium (fusing point is 1552 ℃), iron (fusing point is 1535 ℃), cobalt (fusing point is 1495 ℃) and nickel (fusing point is 1453 ℃) etc.
Further, see also Fig. 3, for the carbon particles of avoiding carbon source gas to decompose being produced directly is deposited on this first metal sheet 5 and second metal sheet 6, and pollution metal plate and influence the homogeneity of its generation electric field can be provided with one deck safety guard 10 outside it.In addition, the part that lead 7 is in the reaction chamber 1 also can be provided with a safety guard 10, directly is deposited on its surface to avoid carbon.And one deck safety guard 10 is set, also can be of value to the cleaning after instrument uses.
This safety guard material is higher and insulating material, for example a silica tube of fusing point.
Further, the device of this oriented growth of carbon nanometer tube array also comprises a temperature controlling system 11, the shape of visual response chamber and deciding, and it can be in the outer or reaction chamber 1 of reaction chamber 1, and specific requirement is that it can be realized the reaction chamber even heating; Preferably this temperature controlling system 11 comprises a plurality of well heaters, and is evenly distributed on the inwall or the outer wall of this reaction chamber 1.Even heating is easy to make the speed of reaction chamber interior 1 generation carbon nanotube everywhere even, and then is easier to make that carbon nano pipe array aligns.
In addition, the method for above-mentioned oriented growth of carbon nanometer tube array comprises the steps:
Step 1 is formed on catalyzer in the substrate 8.This catalyzer can be one or several combination of iron, cobalt, nickel, molybdenum, vanadium, ferric oxide, nickel oxide and cobalt oxide etc.
In the reaction process, because the effect of electric field that has described first metal sheet 5 and second metal sheet 6 to be produced, the polarized generation dipole of carbon nanotube meeting impels the direction growth of carbon nanotube towards electric field, generates the carbon nano pipe array with 9 one-tenth θ angles of substrate surface then.Plasma-assisted chemical vapour deposition method compared to prior art needs the higher isoionic vacuum system of generation of extra cost of use, in the process of this oriented growth of carbon nanometer tube array, only need increase the oriented growth that an electric field can be realized carbon nano pipe array, its required cost reduces.
Compared with prior art, the device and method of above-mentioned oriented growth of carbon nanometer tube array adopts the One metallic plate 5 and second metallic plate 6 produce electric field, and under the effect of electric field, CNT can form Dipole, dipole orientation need identical with the direction of electric field, then impel CNT along with electricity Field direction growth, and be easy to the carbon nano pipe array that obtains to align; And this oriented growth of carbon nanometer tube Only need the extra electric field that increases in the process of array, its required cost is lower; So above-mentioned oriented growth The device and method of carbon nano pipe array has and is easy to realize oriented growth of carbon nanometer tube array and its cost Lower advantage.
Claims (14)
1. the device of an oriented growth of carbon nanometer tube array comprises a reaction chamber; One has direct supply anodal and negative pole; Be arranged on one first metal sheet of this reaction chamber inside, the positive pole of itself and described power supply electrically connects; One second metal sheet, the negative pole of itself and described power supply electrically connects, and parallels with this first metal sheet; And a substrate, it is between this first metal sheet and second metal sheet, and this substrate to be used to form the surface of catalyzer relative with this second metal sheet.
2. the device of oriented growth of carbon nanometer tube array according to claim 1 is characterized in that, online center by this substrate, the center of this first metal sheet and second metal sheet.
3. the device of oriented growth of carbon nanometer tube array according to claim 1 is characterized in that, the material of this first metal sheet and this second metal sheet is one or several a alloy of gold, copper, platinum, palladium, iron, cobalt and nickel.
4. the device of oriented growth of carbon nanometer tube array according to claim 1 is characterized in that the device of this oriented growth of carbon nanometer tube array further comprises a safety guard, and this first metal sheet is located at its inside.
5. the device of oriented growth of carbon nanometer tube array according to claim 1 is characterized in that the device of this oriented growth of carbon nanometer tube array further comprises another safety guard, and this second metal sheet is located at its inside.
6. as the device of oriented growth of carbon nanometer tube array as described in claim 4 or 5, it is characterized in that this safety guard is a silica tube.
7. the device of oriented growth of carbon nanometer tube array according to claim 1 is characterized in that the device of this oriented growth of carbon nanometer tube array further comprises a temperature controlling system, and it is arranged on the inwall or the outer wall of this reaction chamber.
8. the method for an oriented growth of carbon nanometer tube array, it comprises the steps:
Catalyzer is formed in the substrate;
This substrate is arranged between first metal sheet and second metal sheet, and the surface of this substrate formation catalyzer is relative with this second metal sheet;
Connect described direct supply, make between this first metal sheet and second metal sheet and produce electric field;
The reacting by heating chamber; And
Feed carbon source gas, reaction generates directional carbon nanotube array.
9. as the method for oriented growth of carbon nanometer tube array as described in the claim 8, it is characterized in that this catalyzer is one or several combination of iron, cobalt, nickel, molybdenum, vanadium, ferric oxide, nickel oxide and cobalt oxide.
10. as the method for oriented growth of carbon nanometer tube array as described in the claim 8, it is characterized in that the voltage of supply of this direct supply is below 500 volts.
11. the method as oriented growth of carbon nanometer tube array as described in the claim 8 is characterized in that one or several mixture that this carbon source gas is methyl alcohol, ethanol, propyl alcohol, Virahol, methane, ethene, acetylene, propylene, propadiene and carbon monoxide.
12. the method as oriented growth of carbon nanometer tube array as described in the claim 8 is characterized in that further comprise a safety guard, this first metal sheet is located at its inside.
13. the method as oriented growth of carbon nanometer tube array as described in the claim 8 is characterized in that further comprise another safety guard, this second metal sheet is located at its inside.
14. the method as oriented growth of carbon nanometer tube array as described in claim 12 or 13 is characterized in that this safety guard is a silica tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101015594A CN100572269C (en) | 2005-11-18 | 2005-11-18 | The device and method of oriented growth of carbon nanometer tube array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101015594A CN100572269C (en) | 2005-11-18 | 2005-11-18 | The device and method of oriented growth of carbon nanometer tube array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1966402A CN1966402A (en) | 2007-05-23 |
| CN100572269C true CN100572269C (en) | 2009-12-23 |
Family
ID=38075421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101015594A Expired - Fee Related CN100572269C (en) | 2005-11-18 | 2005-11-18 | The device and method of oriented growth of carbon nanometer tube array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100572269C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110207947A (en) * | 2019-05-08 | 2019-09-06 | 南京航空航天大学 | Drop accelerator and method |
| CN114235900B (en) * | 2021-12-22 | 2024-02-27 | 浙江大学 | Device and method for measuring orientation degree of carbon nano tube for terahertz device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353084A (en) * | 2000-11-13 | 2002-06-12 | 国际商业机器公司 | Manufacturing method and application of single wall carbon nano tube |
| CN1395270A (en) * | 2001-03-27 | 2003-02-05 | 佳能株式会社 | Catalyst for forming carbon fibre, its making method and electronic transmitter |
| CN1451785A (en) * | 2002-04-15 | 2003-10-29 | 中国科学院化学研究所 | Process for electrochemically preparing nanoline array of Fullerenes |
| CN1509982A (en) * | 2002-12-21 | 2004-07-07 | �廪��ѧ | Carbon nanometer tube array structure and growing method thereof |
| US20050170089A1 (en) * | 2004-01-15 | 2005-08-04 | David Lashmore | Systems and methods for synthesis of extended length nanostructures |
-
2005
- 2005-11-18 CN CNB2005101015594A patent/CN100572269C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1353084A (en) * | 2000-11-13 | 2002-06-12 | 国际商业机器公司 | Manufacturing method and application of single wall carbon nano tube |
| CN1395270A (en) * | 2001-03-27 | 2003-02-05 | 佳能株式会社 | Catalyst for forming carbon fibre, its making method and electronic transmitter |
| CN1451785A (en) * | 2002-04-15 | 2003-10-29 | 中国科学院化学研究所 | Process for electrochemically preparing nanoline array of Fullerenes |
| CN1509982A (en) * | 2002-12-21 | 2004-07-07 | �廪��ѧ | Carbon nanometer tube array structure and growing method thereof |
| US20050170089A1 (en) * | 2004-01-15 | 2005-08-04 | David Lashmore | Systems and methods for synthesis of extended length nanostructures |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1966402A (en) | 2007-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wang et al. | Carbon nanomaterials with sp2 or/and sp hybridization in energy conversion and storage applications: A review | |
| CN100418876C (en) | Device and method for preparing array of Nano carbon tube | |
| Mabena et al. | Nitrogen-doped carbon nanotubes as a metal catalyst support | |
| Wang et al. | Controllable growth, structure, and low field emission of well-aligned CN x nanotubes | |
| Guo et al. | Graphene nanosheet: synthesis, molecular engineering, thin film, hybrids, and energy and analytical applications | |
| Sheng et al. | Catalyst-free synthesis of nitrogen-doped graphene via thermal annealing graphite oxide with melamine and its excellent electrocatalysis | |
| Qu et al. | Nitrogen-doped graphene as efficient metal-free electrocatalyst for oxygen reduction in fuel cells | |
| CN102482076B (en) | Carbonaceous Nanocomposite having novel structure and fabrication method thereof | |
| Kairi et al. | Recent trends in graphene materials synthesized by CVD with various carbon precursors | |
| TWI386511B (en) | Apparatus and method for producing aligned carbon nanotube arrays | |
| KR101294596B1 (en) | Composition and method of carbon nanotube paste for flat heating element device | |
| KR101418237B1 (en) | Fabrication method of carbon-alloy composite by using intense pulsed light | |
| Ding et al. | One-pot fabrication of g-C3N4/MWCNTs nanocomposites with superior visible-light photocatalytic performance | |
| Ding et al. | Electrochemistry in carbon‐based quantum dots | |
| Yuge et al. | Highly efficient field emission from carbon nanotube− nanohorn hybrids prepared by chemical vapor deposition | |
| CN102994980A (en) | Preparation method and device of high-conductivity carbon nanotube film | |
| Hu et al. | Carbon nanotubes and carbon nanotubes/metal oxide heterostructures: synthesis, characterization and electrochemical property | |
| US9187823B2 (en) | High electric field fabrication of oriented nanostructures | |
| Gacem et al. | Recent advances in methods for synthesis of carbon nanotubes and carbon nanocomposite and their emerging applications: A descriptive review | |
| Chang et al. | A short review of synthesis of graphdiyne and its potential applications | |
| CN100572269C (en) | The device and method of oriented growth of carbon nanometer tube array | |
| Sun et al. | Strategies for scalable gas-phase preparation of free-standing graphene | |
| Chadha et al. | Chemical structures and stability of carbon-doped graphene nanomaterials and the growth temperature of carbon nanomaterials grown by chemical vapor deposition for electrochemical catalysis reactions | |
| Vir Singh et al. | Catalytic chemical vapor deposition methodology for carbon nanotubes synthesis | |
| Tepale-Cortés et al. | Multi-walled carbon nanotubes synthesis by arc discharge method in a glass chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091223 Termination date: 20161118 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |