CN100568542C - A kind of PIN type indoor temperature nucleus radiation detector and preparation method thereof - Google Patents
A kind of PIN type indoor temperature nucleus radiation detector and preparation method thereof Download PDFInfo
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- CN100568542C CN100568542C CNB2008100198322A CN200810019832A CN100568542C CN 100568542 C CN100568542 C CN 100568542C CN B2008100198322 A CNB2008100198322 A CN B2008100198322A CN 200810019832 A CN200810019832 A CN 200810019832A CN 100568542 C CN100568542 C CN 100568542C
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- 230000005855 radiation Effects 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 40
- 239000013078 crystal Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 229910001425 magnesium ion Inorganic materials 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 8
- 229910004611 CdZnTe Inorganic materials 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002178 crystalline material Substances 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
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- 238000001228 spectrum Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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Abstract
The invention discloses a kind of PIN type indoor temperature nucleus radiation detector, comprise GaN substrate, n type doped layer, p type doped layer and two contact electrodes, it is characterized in that: described GaN substrate is a bulk structure, its thickness is 100um～200um, described n type doped layer is the GaN film of doped silicon, be produced on the one side of described GaN substrate, described p type doped layer is magnesium-doped GaN film, be produced on the another side of GaN substrate, two contact electrodes are produced in the outer surface of n type doped layer and p type doped layer.Indoor temperature nucleus radiation detector of the present invention has good room temperature sensitivity, detection efficient and stability, more is applicable to the field of detecting of high radiation field; Simultaneously, manufacturing process of the present invention is simple, and is with low cost, is suitable for industrialization promotion.
Description
Technical field
The present invention relates to a kind of nuclear radiation detector and preparation method thereof, be specifically related to a kind of PIN type indoor temperature nucleus radiation detector and preparation method thereof.
Background technology
Indoor temperature nucleus radiation detector is a class new detector that grows up after gas detector, scintillator detector, have that room temperature is highly sensitive, noise is low, the response light spectrum width, the burst length is short, detection efficient is high, strong, the stable advantages of higher of radioresistance injury reinforcing ability, have purposes widely in fields such as prominent anti-, the Aero-Space of environmental monitoring, nuclear medicine, industrial nondestructive testing, safety inspection, nuclear weapon, astrophysics and high-energy physics, become one of forward position research focus of modern high-tech field.
Yet, owing to indoor temperature nucleus radiation detector requires at room temperature to work, and energy resolution and detection efficient are had relatively high expectations, so the material of preparation detector has also been proposed very high requirement.It is generally acknowledged and must satisfy following requirement: 1. higher atomic number, guaranteeing has higher stopping power to gamma-rays, thereby guarantees that detector has higher detection efficient; 2. bigger energy gap when guaranteeing that detector is at room temperature worked, has higher resistivity and lower leakage current; 3. favorable manufacturability energy makes purity height, monocrystal that integrality is good easily, has good mechanical performance and chemical stability simultaneously, is convenient to carry out machining, is made into potential barrier contact or ohmic contact easily; 4. You Yi physical property, the reverse biased that ability is higher, reverse leakage current is little, and forward current is also little, and mobility of charge carrier rate-life-span long-pendingly wants big in the material simultaneously, guarantee that detector has excellent energy resolution.In addition, these semi-conducting materials also should have comparatively ripe technology in the processing of its crystal growth, crystal, and therefore, the material that meets above-mentioned requirements seldom.
At present, studying maximum is CdZnTe (CZT) indoor temperature nucleus radiation detector, state such as the U.S., Russia is all with CZT crystalline material and detector commercialization thereof, yet, there are the following problems for this crystalline material: 1. because the pyroconductivity of CZT crystalline material is extremely low, its stacking defective forms can be less, make it in crystal growing process, factors such as temperature fluctuation very easily cause the appearance of twin; 2. because its critical shear stress is low, very easily produce dislocation; 3. in its component, the partial vapour pressure of Cd is much higher than the partial vapour pressure of other two kinds of components, easily causes the rich Te of melt; 4. in the temperature-fall period of its crystal growth, its width of solution area that high temperature exists down will be contracted to " 0 " when room temperature, and forming Te easily precipitates/be mingled with, thereby influences material property; Therefore, preparing high-quality CZT crystal and detector thereof is the comparison difficulty, and its cost is also very expensive.
Now as the GaN and the multicomponent alloy material thereof of third generation semi-conducting material representative, because of its unique excellent optics and electric property, enjoy the concern and the favor of academia and industrial quarters, especially active in the research and the application in photoelectron (as issuing diode (LED) and laser diode) and microelectronics (high electron mobility transistor (HEMT)) field especially, be the international focus of current semiconductor circle.
In the detector field, the GaN sill also becomes the research focus of ultraviolet detector, particularly sunlight blind ultraviolet detector gradually.For example, " semiconductor journal " the 25th volume the 6th phase " GaN based Schottky structure UV detector " literary composition of the 711st page to 714 pages, a kind of ultraviolet detector of GaN base is promptly disclosed, constitute by the GaN resilient coating that is grown in 20 nanometers on the Sapphire Substrate, 1 micron n type GaN epitaxial loayer and 0.6 micron intrinsic GaN epitaxial loayer, the surface preparation Schottky electrode, and on n type GaN epitaxial loayer, prepare Ohmic electrode by photoetching, have good ultraviolet detection performance.Because GaN has premium properties such as broad-band gap, strong covalent bond combination, high-melting-point, high breakdown electric field, anticorrosive, radioresistance, therefore the inventor thinks that it can be used as the indoor temperature nucleus radiation detector semi-conducting material, solves the problem that existing CZT indoor temperature nucleus radiation detector exists.Yet existing GaN ultraviolet detector thickness has only 1～2 micron, and is not suitable for the indoor temperature nucleus radiation detection.
On the other hand, in the prior art, in preparation during detector, employing be unidirectional growth technology, adopt the mode of multistep photoetching to prepare contact electrode, thereby preparation technology's more complicated, this has also increased the cost of manufacture of detector simultaneously.
Summary of the invention
The object of the invention provides a kind of PIN type indoor temperature nucleus radiation detector and preparation method thereof, and the detector of acquisition should have good room temperature sensitivity, detection efficient and stability, simultaneously, simplifies preparation technology, reduces cost.
For achieving the above object, the technical solution used in the present invention is: a kind of PIN type indoor temperature nucleus radiation detector, comprise GaN substrate, n type doped layer, p type doped layer and two contact electrodes, described GaN substrate is a bulk structure, its thickness is 100um～200um, described n type doped layer is the GaN film of doped silicon, be produced on the one side of described GaN substrate, described p type doped layer is magnesium-doped GaN film, be produced on the another side of GaN substrate, two contact electrodes are produced in the outer surface of n type doped layer and p type doped layer.
In the technique scheme, described GaN substrate GaN single-crystal thick films, its resistivity is 10
6～10
9Ω cm, dislocation density is less than 10
6Cm
-2
In the technique scheme, the contact electrode that links to each other with n type doped layer is to form at the Ti/Au of n type doped layer outside deposition 10nm～30nm, and the contact electrode that links to each other with p type doped layer is to form at the Ni/Au of p type doped layer outside deposition 10nm～30nm.
In the technique scheme, the thickness of described n type doped layer is 1um～3um, and the thickness of described p type doped layer is 1um～3um.
The preparation method of described PIN type indoor temperature nucleus radiation detector comprises the steps:
1) adopt mocvd method, growing GaN film on Sapphire Substrate, film thickness are 1um～4um;
2) with above-mentioned GaN film as new substrate, the growing GaN single-crystal thick films, thickness is 100um～200um, during growth ending, lowers the temperature, and the GaN single-crystal thick films is separated from substrate, obtains GaN single-crystal thick films substrate;
3) at the one side growth n-GaN (Si) of above-mentioned GaN single-crystal thick films substrate film, Si ion doping concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming n type doped layer, thickness is 1um～3um; The above-mentioned substrate that overturns, at the another side growth p-GaN (Mg) of substrate film, Mg ion doping concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming p type doped layer, thickness is 1um～3um;
4) on said n type doped layer, deposit the Ti/Au of 10nm～30nm, on above-mentioned p type doped layer, deposit the Ni/Au of 10nm～30nm, make Ohm contact electrode;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
Another kind of preparation method correspondingly comprises the steps:
1) adopt mocvd method, growing GaN film on Sapphire Substrate, film thickness are 1um～4um;
2) with above-mentioned GaN film as new substrate, the growing GaN single-crystal thick films, thickness is 100um～200um, during growth ending, lowers the temperature, and the GaN single-crystal thick films is separated from substrate, obtains GaN single-crystal thick films substrate;
3) inject the Si ion in the one side of above-mentioned GaN single-crystal thick films substrate, it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming n type doped layer, thickness is 1um～3um; The above-mentioned substrate that overturns injects the Mg ion at the another side of substrate, and it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming P type doped layer, thickness is 1um～3um;
4) on said n type doped layer, deposit the Ti/Au of 10nm～30nm, on above-mentioned p type doped layer, deposit the Ni/Au of 10nm～30nm, make Ohm contact electrode;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
Because the use of technique scheme, the present invention compared with prior art has following advantage:
1. because the GaN thick film thickness that the present invention adopts has 100um～200um, be adapted to the bigger situation of nuclear radiation energy, the GaN material has premium properties such as high resistivity, thick atom ordinal number, strong covalent bond combination, high-melting-point, high breakdown electric field, anticorrosive, radioresistance, therefore, indoor temperature nucleus radiation detector with its preparation has good room temperature sensitivity, detection efficient and stability, more is applicable to the field of detecting of high radiation field;
2. the present invention adopts thick film, can break away from Sapphire Substrate, and electrode is produced in the detector two sides, thereby has saved the alignment photoetching process, the growing method novelty, and manufacture craft is simple;
3. because the GaN material that the present invention uses has favorable mechanical performance and chemical stability, its material growth technique is comparatively ripe, easily prepares the high quality GaN crystalline material.
4. GaN material of the present invention has wideer energy gap (GaN is 3.39, and CZT is 1.5), and therefore indoor temperature nucleus radiation detector prepared therefrom does not need to reduce thermal noise by cooling, can really realize working and room temperature.
Description of drawings
Accompanying drawing 1 is the hierarchical structure schematic diagram of the embodiment of the invention one.
Wherein: 1, GaN substrate; 2, n type doped layer; 3, p type doped layer; 4, n type Ohm contact electrode; 5, p type Ohm contact electrode.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one: shown in accompanying drawing 1, a kind of PIN type GaN indoor temperature nucleus radiation detector, comprise GaN substrate 1, n type doped layer 2, p type doped layer 3 and two contact electrodes 4,5, described n type doped layer 2 is produced on the one side of described GaN substrate 1, described p type doped layer 3 is produced on the another side of GaN substrate 1, and contact electrode 4 and 5 is produced on the outer surface of n type and p type doped layer.Described GaN substrate 1 is the GaN single-crystal thick films, and its thickness is 100～200um, and resistivity is 10
6～10
9Ω cm, dislocation density is less than 10
6Cm
-2The thickness of described n type doped layer 2 is 2um, and the thickness of described p type doped layer 3 is 2um.
The preparation method of the PIN type GaN indoor temperature nucleus radiation detector of present embodiment comprises the steps:
1) adopting MOCVD epitaxy method growth thickness on Sapphire Substrate is the GaN film of 3um, obtains the smooth surface GaN film of high crystalline quality;
2) with above-mentioned GaN film as new substrate, use HVPE epitaxy method growing GaN single-crystal thick films, thickness is 100～200um;
3) with above-mentioned GaN single-crystal thick films as new substrate, at the one side of substrate growth n-GaN (Si) film, form n type doped layer, thickness is 2um; At the another side growth p-GaN (Mg) of above-mentioned substrate film, form p type doped layer, thickness is 2um;
4) Ti/Au of deposition 10/30nm on said n type doped layer, the Ni/Au of deposition 10/30nm makes contact electrode on above-mentioned P type doped layer;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
Embodiment two: a kind of preparation method of PIN type GaN indoor temperature nucleus radiation detector comprises the steps:
1) adopting MOCVD epitaxy method growth thickness on Sapphire Substrate is the GaN film of 3um, obtains the smooth surface GaN film of high crystalline quality;
2) with above-mentioned GaN film as new substrate, use HVPE epitaxy method growing GaN single-crystal thick films, thickness is 100～200um;
3) inject the Si ion in the one side of above-mentioned GaN single-crystal thick films substrate, it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming n type doped layer, thickness is 1um; The above-mentioned substrate that overturns injects the Mg ion at the another side of substrate, and it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming P type doped layer, thickness is 1um;
4) Ti/Au of deposition 10nm/20nm on said n type doped layer, the Ni/Au of deposition 10nm/20nm makes contact electrode on above-mentioned p type doped layer;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
Claims (6)
1. PIN type indoor temperature nucleus radiation detector, comprise GaN substrate, n type doped layer, p type doped layer and two contact electrodes, it is characterized in that: described GaN substrate is a bulk structure, its thickness is 100um～200um, described n type doped layer is the GaN film of doped silicon, is produced on the one side of described GaN substrate, and described p type doped layer is magnesium-doped GaN film, be produced on the another side of GaN substrate, two contact electrodes are produced in the outer surface of n type doped layer and p type doped layer.
2. PIN type indoor temperature nucleus radiation detector according to claim 1 is characterized in that: described GaN substrate is the GaN single-crystal thick films, and its resistivity is 10
6～10
9Ω cm, dislocation density is less than 10
6Cm
-2
3. PIN type indoor temperature nucleus radiation detector according to claim 1, it is characterized in that: the contact electrode that links to each other with n type doped layer is to form at the Ti/Au of n type doped layer outside deposition 10nm～30nm, and the contact electrode that links to each other with p type doped layer is to form at the Ni/Au of p type doped layer outside deposition 10nm～30nm.
4. PIN type indoor temperature nucleus radiation detector according to claim 1 is characterized in that: the thickness of described n type doped layer is 1um～3um, and the thickness of described p type doped layer is 1um～3um.
5. the preparation method of a PIN type indoor temperature nucleus radiation detector is characterized in that: comprise the steps:
1) adopt mocvd method, growing GaN film on Sapphire Substrate, film thickness are 1um～4um;
2) with above-mentioned GaN film as new substrate, the growing GaN single-crystal thick films, thickness is 100um～200um, during growth ending, lowers the temperature, and the GaN single-crystal thick films is separated from substrate, obtains GaN single-crystal thick films substrate;
3) at the one side growth n-GaN (Si) of above-mentioned GaN single-crystal thick films substrate film, Si ion doping concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming n type doped layer, thickness is 1um～3um; The above-mentioned substrate that overturns, at the another side growth p-GaN (Mg) of substrate film, Mg ion doping concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming p type doped layer, thickness is 1um～3um;
4) on said n type doped layer, deposit the Ti/Au of 10nm～30nm, on above-mentioned p type doped layer, deposit the Ni/Au of 10nm～30nm, make Ohm contact electrode;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
6. the preparation method of a PIN type indoor temperature nucleus radiation detector is characterized in that: comprise the steps:
1) adopt mocvd method, growing GaN film on Sapphire Substrate, film thickness are 1um～4um;
2) with above-mentioned GaN film as new substrate, the growing GaN single-crystal thick films, thickness is 100um～200um, during growth ending, lowers the temperature, and the GaN single-crystal thick films is separated from substrate, obtains GaN single-crystal thick films substrate;
3) inject the Si ion in the one side of above-mentioned GaN single-crystal thick films substrate, it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming n type doped layer, thickness is 1um～3um; The above-mentioned substrate that overturns injects the Mg ion at the another side of substrate, and it injects ion concentration is 5 * 10
18/ cm
3～5 * 10
19/ cm
3, forming P type doped layer, thickness is 1um～3um;
4) on said n type doped layer, deposit the Ti/Au of 10nm～30nm, on above-mentioned p type doped layer, deposit the Ni/Au of 10nm～30nm, make Ohm contact electrode;
5) after passivation, encapsulation, make PIN type GaN indoor temperature nucleus radiation detector.
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| CN100568542C true CN100568542C (en) | 2009-12-09 |
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| CN102339893A (en) * | 2010-07-23 | 2012-02-01 | 上海凯世通半导体有限公司 | Preparation method for solar wafer |
| CN102064229A (en) * | 2010-09-14 | 2011-05-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | High resistance GaN room temperature nuclear detector and preparation method thereof |
| CN103605150B (en) * | 2013-10-26 | 2016-08-17 | 河北工业大学 | A kind of Schottky neutron detector and preparation method thereof |
| EP3651213A4 (en) * | 2017-08-09 | 2020-05-20 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion device |
| CN108493292B (en) * | 2018-04-12 | 2020-06-09 | 大连理工大学 | Silicon carbide single crystal-based X-ray detector and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1744326A (en) * | 2004-09-01 | 2006-03-08 | 住友电气工业株式会社 | Epitaxial substrate and semiconductor element |
| CN1747184A (en) * | 2004-09-10 | 2006-03-15 | 中国科学院半导体研究所 | PIN structure gallium nitride-base ultraviolet detector and preparation method thereof |
| JP2007227790A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Electric Ind Ltd | Nitride semiconductor device |
| US20080054296A1 (en) * | 2006-09-06 | 2008-03-06 | Samsung Electronics Co., Ltd. | Nitride-based semiconductor light emitting device and method of manufacturing the same |
-
2008
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1744326A (en) * | 2004-09-01 | 2006-03-08 | 住友电气工业株式会社 | Epitaxial substrate and semiconductor element |
| CN1747184A (en) * | 2004-09-10 | 2006-03-15 | 中国科学院半导体研究所 | PIN structure gallium nitride-base ultraviolet detector and preparation method thereof |
| JP2007227790A (en) * | 2006-02-24 | 2007-09-06 | Sumitomo Electric Ind Ltd | Nitride semiconductor device |
| US20080054296A1 (en) * | 2006-09-06 | 2008-03-06 | Samsung Electronics Co., Ltd. | Nitride-based semiconductor light emitting device and method of manufacturing the same |
Non-Patent Citations (1)
| Title |
|---|
| Current-voltage and reverse recovery characteristicsofbulkGaN p-i-n rectifiers. Y. Irokawa et al.Applied Physics Letters,Vol.83 No.11. 2003 * |
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