CN100561148C - A kind of non-refrigerate infrared focal plane array seeker and preparation method thereof - Google Patents
A kind of non-refrigerate infrared focal plane array seeker and preparation method thereof Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 77
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 27
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Abstract
The invention discloses a kind of non-refrigerate infrared focal plane array seeker, comprising: by double-deck silicon nitride SiN
xSupporting construction that film forms respectively and micro-mirror structure, supporting construction is used to absorb infrared radiation simultaneously also as the infrared radiation absorption layer; Micro-mirror structure is used for forming the infrared absorption resonant cavity with supporting construction, absorbs infrared radiation, improves the absorption efficiency of supporting construction for infrared radiation, simultaneously the catoptron of also reading as optics; Described supporting construction and micro-mirror structure pass through SiN
xMaterial connects.The present invention discloses a kind of method for making of non-refrigerate infrared focal plane array seeker.Utilize the present invention, because supporting construction serves as the infrared radiation absorption layer simultaneously, the micro-mirror structure back metal can infrared reflecting, so improve absorption efficiency and the fill factor, curve factor of support membrane for infrared radiation greatly.In addition, the present invention has also improved system's detection limit sensitivity.
Description
Technical field
The present invention relates to non-refrigerate infrared focal plane array seeker technical field in the infrared imaging system, non-refrigerate infrared focal plane array seeker of relate in particular to a kind of high fill factor double membrane structure, reading based on optics and preparation method thereof.
Background technology
Non-refrigerate infrared focal plane array seeker spare is the core component of infrared imaging system.Traditional infrared focal plane detector utilizes the inner photoeffect of semiconductor material more, infrared radiation incides on the focus planardetector and causes temperature to raise, thereby cause that detector pixel resistance characteristic or voltage output characteristics change, survey the situation of change of the resistance or the voltage of each pixel by the signal read circuit that adds, and it is changed into and the corresponding heat picture of radiation profiles.
The subject matter that traditional infrared focal plane detector exists is that the signal read circuit manufacture difficulty is exponential increase with the increase of detector picture element density; Circuit itself can be introduced thermonoise, and circuit lead is again the good conductor of heat, and the radiation heat that causes inciding above the focal plane arrays (FPA) scatters and disappears easily, has limited the raising of system sensitivity.
For these reasons, the researchist proposed the applied optics read-out principle, based on the non-refrigeration type infrared focal plane imaging system of MEMS micro cantilever structure.Document M.Mao, et al. " Infrared vision using an uncooled thermo-opto-mechanical camera:Design; microfabrication; and performance; " Proc.IEEE MEMS Conf., pp.100-105, Jan.17-21,1999 disclose a kind of applied optics read-out principle, non-refrigeration type infrared focal plane imaging system based on the MEMS micro cantilever structure, this system mainly is made up of two parts: the 1) focal plane arrays (FPA) of being made up of the micro-cantilever array structure (focal plane array-FPA), it places in the vacuum chamber usually, and both sides are respectively infrared ray window and the saturating light window that detects; 2) optical detection part, by the non contact optical digital imaging len, processor and display are formed.
Be applied to optics and read non-refrigerating infrared focal plane (FPA) imager chip and form the face array by a series of image-generating units usually, each pixel is made up of a micromirror and two micro-cantilevers.Whole pixel is made of two kinds of very big materials of difference of thermal expansion coefficients, the infrared energy of incident causes the temperature rise of pixel micro-cantilever, thereby cause the distortion of beam, cause the corner of pixel to change, the temperature rise difference, the corner of each pixel changes also different, and the optical detection part is separated the corner of reading semi-girder by the variation that detects the micromirror output spectrum and changed and distribute, and shows with the mode of the plot of light intensity picture temperature field with testee.
Document Yang Zhao, et al., Optomechanical uncooled infrared imagingsystem:design, microfabrication, and performance, Journal of MEMS, 2,002 11 (2) .pp.136-146 disclose U.S. Berkeley university, document Tohru.Ishizuya.etal. " Optically readable bi-material infrared detector " .Proc.ofSPIE.2001.VOL 4369.pp.342-349 discloses Nikon.Corp, and document J.Zhao. " Highsensitivity photomechanical MW-LWIR imaging using an uncooled MEMSmicrocantilever array and optical readout " .Proc.of SPIE.2005.VOL 5783.pp.506-513 discloses the research that U.S. Agiltron Inc. company etc. was engaged in this non-refrigeration type infrared focal plane imaging system.Wherein, the spectrum plane pin hole filtering mode of 4f system and the infrared detection system of bi-material microcantilevel array are adopted in the research of Nikon.Corp;
Be used in the above-mentioned research light read with infrared absorption catoptron and supporting construction all in one plane, and support by the fixing semi-girder of silicon base, cause fill factor, curve factor lower, general fill factor, curve factor is all below 80%.In addition, the reflection of silicon base also causes the reduction of incident infrared radiation absorption efficiency.
Summary of the invention
(1) technical matters that will solve
In view of this, one object of the present invention is to provide a kind of non-refrigerate infrared focal plane array seeker, to improve fill factor, curve factor and infrared radiation absorption efficiency.
Another object of the present invention is to provide a kind of method for making of non-refrigerate infrared focal plane array seeker, to improve fill factor, curve factor and infrared radiation absorption efficiency.
(2) technical scheme
An aspect for achieving the above object the invention provides a kind of non-refrigerate infrared focal plane array seeker, and this detector comprises: by double-deck silicon nitride SiN
xSupporting construction that film forms respectively and micro-mirror structure, supporting construction is used to absorb infrared radiation simultaneously also as the infrared radiation absorption layer; Micro-mirror structure is used for forming the infrared absorption resonant cavity with supporting construction, absorbs infrared radiation, improves the absorption efficiency of supporting construction for infrared radiation, simultaneously the catoptron of also reading as optical signalling; Described supporting construction and micro-mirror structure pass through SiN
xMaterial connects.
Described supporting construction is a detector array, comprises a plurality of micro-joist units.
Described micro-joist unit is a detector cells, and its surface further is coated with layer of metal, is used for infrared reflecting, improves the absorption efficiency of supporting construction for infrared radiation.
The back side of described micro-reflector further is coated with layer of metal, is used for reflect visible light, for the optical signalling read-out system provides input signal.
Described metal is golden Au or aluminium Al.
Be another aspect that achieves the above object, the invention provides a kind of method for making of non-refrigerate infrared focal plane array seeker, this method adopts full hollow out body silicon and surface film technology to combine on manufacture craft, specifically comprises:
A, on silicon substrate, adopt low-pressure chemical vapor deposition LPCVD growth SiN
xFilm;
B, the SiN that is growing
xEtch micro reflector array on the film;
C, on the micro reflector array that etching forms deposit growing silicon oxide SiO
2Sacrifice layer, etching forms through hole;
D, LPCVD growth SiNx film forms supporting construction figure masking layer by photoetching process as supporting layer on the SiNx supporting layer on the through hole that forms, and adopts dry plasma etch SiNx film then, forms the supporting construction figure;
E, on the SiNx supporting construction figure that forms evaporated metal layer;
F, at silicon substrate back-etching windowing, erode silicon substrate and SiO in the window
2Sacrifice layer;
G, at micro reflector array back side evaporation metal, form non-refrigerate infrared focal plane array seeker.
Described steps A comprises:＜100〉to adopt the LPCVD growth thickness be 0.1 to 2 micron SiN for the tow sides of silicon chip
xFilm.
Described step B comprises:
B1, on the SiNx film, form micro reflector array figure masking layer by photoetching process;
B2, dry plasma etch SiNx film form the micro reflector array figure;
Described step B1 comprises: evaporating Al or Cr thin metal layer on the SiNx film, form micro reflector array photoresist figure by photoetching process, and wet etching removes Al or Cr, removes photoresist, and forms masking layer;
Perhaps, then behind thin Al of evaporation on the SiNx film or Cr metal level, form masking layer by stripping technology if adopt the photoetching of cloudy version.
Described step B2 comprises: adopt SF
6Gas, with the flow of 120sccm and the power isotropic etching SiNx film of 60w, form the micro reflector array figure.
Described step C comprises:
After C1, wet etching are removed masking layer, adopt LPCVD or PECVD deposit growth SiO on the micro reflector array that etching forms
2Film is as sacrifice layer, and thickness is 1.5 to 2.5 microns;
C2, at SiO
2Evaporating Al or Cr thin metal layer on the film form through hole photoresist figure by photoetching process, and wet etching removes Al or Cr, removes photoresist, and forms masking layer; If adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology;
C3, utilize the protection of masking layer, adopt CHF
3Gas, with the flow of 120sccm and the power isotropic etching SiO of 60w
2Film forms the via-hole array figure.
Described in the step D on the through hole that forms LPCVD growth SiN
xFilm comprises as supporting layer: after wet etching is removed masking layer, at SiO
2Adopting LPCVD deposit growth thickness on the sacrifice layer is that 0.1 to 2 micron SiNx film is as supporting layer;
Comprising by photoetching process formation supporting construction figure masking layer on the SiNx supporting layer described in the step D: first evaporating Al or Cr thin metal layer on the SiNx film, form supporting construction photoresist figure by photoetching process, wet etching removes Al or Cr, remove photoresist, form masking layer, if adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology;
Adopt dry plasma etch SiNx film described in the step D, form the supporting construction figure and comprise: adopt SF
6Gas, with the flow of 120sccm and the power isotropic etching SiN of 60w
xFilm forms the supporting construction array pattern.
Described step e comprises: first evaporating Al or Au metal level on the SiNx supporting construction figure that has formed, form supporting construction metal level photoresist figure by photoetching process, wet etching removes Al or Au, remove photoresist, form required metal level, if adopt the photoetching of cloudy version, then evaporating Al or Au metal level form required metal level by stripping technology.
Comprise at silicon substrate back-etching windowing described in the step F: adopt dual surface lithography technology at the silicon substrate back side, a photoetching, three times the plasma dry etching etches away SiN respectively
x/ SiO
2/ SiN
x/ film exposes silicon base;
Erode silicon substrate and SiO in the window described in the step F
2Sacrifice layer comprises: the silicon base in employing wet etching method or the dry etching method removal window and the SiO of the positive deposit of silicon chip
2Sacrifice layer discharges the double membrane structure micro reflector array of high fill factor.
Described step G comprises: Al or Au metal level at the direct evaporation desired thickness of mirror back surface of the double membrane structure micro reflector array of the high fill factor that has discharged form non-refrigerate infrared focal plane array seeker.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this non-refrigerate infrared focal plane array seeker provided by the invention is by double-deck SiN
xFilm forms supporting construction and micro-mirror structure respectively, because supporting construction serves as the infrared radiation absorption layer simultaneously, the micro-mirror structure back metal can infrared reflecting, so improve the absorption efficiency of support membrane for infrared radiation greatly.
2, this non-refrigerate infrared focal plane array seeker provided by the invention, its fill factor, curve factor reaches more than 95%, compares existing fill factor, curve factor mostly below 80%, has improved fill factor, curve factor greatly.
3, this non-refrigerate infrared focal plane array seeker provided by the invention, owing to eliminated silicon base, removed the emission of silicon base to the incident infrared radiation, under same target emanation intensity, the infrared flux that arrives the non-refrigerate infrared focal plane array seeker surface increases greatly, is equivalent to improve system's detection limit sensitivity.
Description of drawings
Fig. 1 is the structured flowchart of non-refrigerate infrared focal plane array seeker provided by the invention;
Fig. 2 is the synoptic diagram of non-refrigerate infrared focal plane array seeker provided by the invention;
Fig. 3 is the realization flow figure of making non-refrigerate infrared focal plane array seeker overall technological scheme provided by the invention;
Fig. 3-1 is the present invention SiN that grows on silicon substrate
xThe synoptic diagram of film;
Fig. 3-2 forms the synoptic diagram of micro reflector array figure masking layer on the SiNx film for the present invention;
Fig. 3-3 forms the synoptic diagram of micro reflector array figure for etching SiNx film of the present invention;
Fig. 3-4 removes masking layer for the present invention on the SiNx micro reflector array figure that forms, growth SiO
2The synoptic diagram of film;
Fig. 3-5 is the SiO of the present invention in growth
2Form the synoptic diagram of masking layer on the film;
Fig. 3-6 forms the synoptic diagram of via-hole array figure on the masking layer that forms for the present invention;
Fig. 3-7 removes masking layer for the present invention on the via-hole array figure that forms, the synoptic diagram of growth SiNx film;
Fig. 3-8 forms the synoptic diagram of masking layer on the SiNx film for the present invention;
Fig. 3-9 forms the synoptic diagram of supporting construction array pattern for the present invention;
Fig. 3-10 forms required metal level for the present invention on the supporting construction array pattern, expose the synoptic diagram of silicon base at silicon substrate back-etching SiNx film;
Fig. 3-11 removes the SiO of silicon base in the window and the positive deposit of silicon chip for the present invention
2Sacrifice layer discharges the synoptic diagram of the double membrane structure micro reflector array of high fill factor;
Fig. 3-12 is the metallic reflector of the present invention at mirror back surface evaporation desired thickness, forms the synoptic diagram of non-refrigerate infrared focal plane array seeker;
Fig. 4 is a method flow diagram of making non-refrigerate infrared focal plane array seeker according to the embodiment of the invention;
Fig. 4-1 is the SiN that grows according to the embodiment of the invention on silicon substrate
xThe synoptic diagram of film;
Fig. 4-2 is the synoptic diagram that forms micro reflector array figure masking layer according to the embodiment of the invention on the SiNx film;
Fig. 4-3 is the synoptic diagram that forms the micro reflector array figure according to embodiment of the invention etching SiNx film;
Fig. 4-4 is for removing masking layer according to the embodiment of the invention, growth SiO on the SiNx micro reflector array figure that forms
2The synoptic diagram of film;
Fig. 4-5 is according to the SiO of the embodiment of the invention in growth
2Form the synoptic diagram of masking layer on the film;
Fig. 4-6 is the synoptic diagram that forms the via-hole array figure according to the embodiment of the invention on the masking layer that forms;
Fig. 4-7 is for removing masking layer according to the embodiment of the invention, the synoptic diagram of growth SiNx film on the via-hole array figure that forms;
Fig. 4-8 is the synoptic diagram that forms masking layer according to the embodiment of the invention on the SiNx film;
Fig. 4-9 is the synoptic diagram that forms the supporting construction array pattern according to the embodiment of the invention;
Fig. 4-10 forms required metal level according to the embodiment of the invention on the supporting construction array pattern, expose the synoptic diagram of silicon base at silicon substrate back-etching SiNx film;
Fig. 4-11 is the SiO according to silicon base in the embodiment of the invention removal window and the positive deposit of silicon chip
2Sacrifice layer discharges the synoptic diagram of the double membrane structure micro reflector array of high fill factor;
Fig. 4-12 is according to the metallic reflector of the embodiment of the invention at mirror back surface evaporation desired thickness, forms the synoptic diagram of non-refrigerate infrared focal plane array seeker.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of employing double membrane structure design, non-refrigerated infrared focal plane probe structural design and the process for making read based on optics, characteristics are to form supporting construction and micro-mirror structure respectively by duplicature, support membrane serves as the infrared radiation absorption layer simultaneously, the micro-reflector back metal can infrared reflecting, to improve the absorption efficiency of support membrane for infrared radiation, this array device fill factor, curve factor reaches more than 95%, on manufacture craft, adopt full hollow out body silicon and surface film technology to combine, on silicon substrate, adopt low-pressure chemical vapor deposition (LPCVD) grown silicon nitride (SiNx) film, etch micro reflector array, again deposit growing silicon oxide (SiO
2) sacrifice layer, etching through hole, LPCVD growth SiNx film etches supporting construction and evaporated metal layer again, and etched open overleaf window erodes silicon substrate and SiO in the window
2Sacrifice layer is at last at micro-reflector back side evaporation metal.
As shown in Figure 1, Fig. 1 is the structured flowchart of non-refrigerate infrared focal plane array seeker provided by the invention, and this detector comprises: by double-deck silicon nitride SiN
xSupporting construction that film forms respectively and micro-mirror structure, supporting construction is used to absorb infrared radiation simultaneously also as the infrared radiation absorption layer; Micro-mirror structure is used for forming the infrared absorption resonant cavity with supporting construction, absorbs infrared radiation, improves the absorption efficiency of supporting construction for infrared radiation, simultaneously the catoptron of also reading as optical signalling; Described supporting construction and micro-mirror structure pass through SiN
xMaterial connects.
Described supporting construction is a detector array, comprises a plurality of micro-joist units.Described micro-joist unit is a detector cells, and its surface further is coated with layer of metal, is used for infrared reflecting, improves the absorption efficiency of supporting construction for infrared radiation.The back side of described micro-reflector further is coated with layer of metal, is used for reflect visible light, for the optical signalling read-out system provides input signal.Described metal is golden Au or aluminium Al.
For further specifying non-refrigerate infrared focal plane array seeker provided by the invention, Fig. 2 shows the synoptic diagram of this non-refrigerate infrared focal plane array seeker.Wherein, 10 is the coupling part of described supporting construction and micro-mirror structure, and 11 is supporting construction, and 12 is micro-mirror structure.
Structured flowchart based on non-refrigerate infrared focal plane array seeker shown in Figure 1, and the synoptic diagram of non-refrigerate infrared focal plane array seeker shown in Figure 2, Fig. 3 shows the realization flow figure of making non-refrigerate infrared focal plane array seeker overall technological scheme provided by the invention, and this method may further comprise the steps:
Step 301: on silicon substrate, adopt low-pressure chemical vapor deposition LPCVD growth SiN
xFilm;
In this step, being＜100〉to adopt the LPCVD growth thickness be 0.1 to 2 micron SiN for the tow sides of silicon chip
xFilm;
The technological process corresponding with this step is shown in Fig. 3-1, and Fig. 3-1 is the present invention SiN that grows on silicon substrate
xThe synoptic diagram of film.
Step 302: at the SiN of growth
xEtch micro reflector array on the film;
In this step, on the SiNx film, form micro reflector array figure masking layer earlier, specifically comprise: evaporating Al or Cr thin metal layer on the SiNx film by photoetching process, form micro reflector array photoresist figure by photoetching process, wet etching removes Al or Cr, removes photoresist, and forms masking layer; Perhaps, then behind thin Al of evaporation on the SiNx film or Cr metal level, form masking layer by stripping technology if adopt the photoetching of cloudy version; The technological process corresponding with this step is shown in Fig. 3-2, and Fig. 3-2 forms the synoptic diagram of micro reflector array figure masking layer on the SiNx film for the present invention;
Dry plasma etch SiNx film forms the micro reflector array figure then, specifically comprises: adopt SF
6Gas, with the flow of 120sccm and the power isotropic etching SiNx film of 60w, form the micro reflector array figure; The technological process corresponding with this step is shown in Fig. 3-3, and Fig. 3-3 forms the synoptic diagram of micro reflector array figure for etching SiNx film of the present invention.
Step 303: deposit growing silicon oxide SiO on the micro reflector array that etching forms
2Sacrifice layer, etching forms through hole;
This step specifically comprises following substep:
Step 3031: after wet etching is removed masking layer, adopt LPCVD or PECVD deposit growth SiO on the micro reflector array that etching forms
2Film is as sacrifice layer, and thickness is 1.5 to 2.5 microns; The technological process corresponding with this step as shown in Figure 3-4, Fig. 3-4 removes masking layer for the present invention on the SiNx micro reflector array figure that forms, growth SiO
2The synoptic diagram of film
Step 3032: at SiO
2Evaporating Al or Cr thin metal layer on the film form through hole photoresist figure by photoetching process, and wet etching removes Al or Cr, removes photoresist, and forms masking layer; If adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology; The technological process corresponding with this step is shown in Fig. 3-5, and Fig. 3-5 is the SiO of the present invention in growth
2Form the synoptic diagram of masking layer on the film;
Step 3033: utilize the protection of masking layer, adopt CHF
3Gas, with the flow of 120sccm and the power isotropic etching SiO of 60w
2Film forms the via-hole array figure.
The technological process corresponding with this step is shown in Fig. 3-6, and Fig. 3-6 forms the synoptic diagram of via-hole array figure on the masking layer that forms for the present invention.
Step 304: LPCVD growth SiNx film forms supporting construction figure masking layer by photoetching process as supporting layer on the SiNx supporting layer on the through hole that forms, and adopts dry plasma etch SiNx film then, forms the supporting construction figure;
In this step, described on the through hole that forms LPCVD growth SiN
xFilm comprises as supporting layer: after wet etching is removed masking layer, at SiO
2Adopting LPCVD deposit growth thickness on the sacrifice layer is that 0.1 to 2 micron SiNx film is as supporting layer; The technological process corresponding with this step is shown in Fig. 3-7, and Fig. 3-7 removes masking layer for the present invention on the via-hole array figure that forms, the synoptic diagram of growth SiNx film;
Describedly comprising forming supporting construction figure masking layer by photoetching process on the SiNx supporting layer: first evaporating Al or Cr thin metal layer on the SiNx film, form supporting construction photoresist figure by photoetching process, wet etching removes Al or Cr, remove photoresist, form masking layer, if adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology; The technological process corresponding with this step is shown in Fig. 3-8, and Fig. 3-8 forms the synoptic diagram of masking layer on the SiNx film for the present invention;
Described employing dry plasma etch SiNx film forms the supporting construction figure and comprises: adopts SF
6Gas, with the flow of 120sccm and the power isotropic etching SiN of 60w
xFilm forms the supporting construction array pattern; The technological process corresponding with this step is shown in Fig. 3-9, and Fig. 3-9 forms the synoptic diagram of supporting construction array pattern for the present invention.
Step 305: evaporated metal layer on the SiNx supporting construction figure that forms;
This step specifically comprises: first evaporating Al or Au metal level on the SiNx supporting construction figure that has formed, form supporting construction metal level photoresist figure by photoetching process, wet etching removes Al or Au, remove photoresist, form required metal level, if adopt the photoetching of cloudy version, then evaporating Al or Au metal level form required metal level by stripping technology.
Step 306:, erode silicon substrate and SiO in the window at silicon substrate back-etching windowing
2Sacrifice layer;
Comprise at silicon substrate back-etching windowing described in this step: adopt dual surface lithography technology at the silicon substrate back side, a photoetching, three times the plasma dry etching etches away SiN respectively
x/ SiO
2/ SiN
x/ film exposes silicon base;
With described in above-mentioned steps 305 and 306 in the corresponding technological process of silicon substrate back-etching windowing shown in Fig. 3-10, Fig. 3-10 forms required metal level for the present invention on the supporting construction array pattern, expose the synoptic diagram of silicon base at silicon substrate back-etching SiNx film;
Erode silicon substrate and SiO in the window described in this step
2Sacrifice layer comprises: the silicon base in employing wet etching method or the dry etching method removal window and the SiO of the positive deposit of silicon chip
2Sacrifice layer discharges the double membrane structure micro reflector array of high fill factor;
The technological process corresponding with this step is shown in Fig. 3-11, and Fig. 3-11 removes the SiO of silicon base in the window and the positive deposit of silicon chip for the present invention
2Sacrifice layer discharges the synoptic diagram of the double membrane structure micro reflector array of high fill factor.
Step 307:, form non-refrigerate infrared focal plane array seeker at micro reflector array back side evaporation metal;
This step specifically comprises: Al or Au metal level at the direct evaporation desired thickness of mirror back surface of the double membrane structure micro reflector array of the high fill factor that has discharged form non-refrigerate infrared focal plane array seeker;
The technological process corresponding with this step is shown in Fig. 3-12, and Fig. 3-12 is the metallic reflector of the present invention at mirror back surface evaporation desired thickness, forms the synoptic diagram of non-refrigerate infrared focal plane array seeker.
Based on the realization flow figure of making non-refrigerate infrared focal plane array seeker overall technological scheme shown in Figure 3, Fig. 4 shows the method flow diagram of making non-refrigerate infrared focal plane array seeker according to the embodiment of the invention, and this method may further comprise the steps:
Step 401:＜100〉silicon chip (201) tow sides, adopt LPCVD deposit SiNx film 202 and 209, thickness is 1.5 microns;
The technological process corresponding with this step is shown in Fig. 4-1, and Fig. 4-1 is the SiN that grows according to the embodiment of the invention on silicon substrate
xThe synoptic diagram of film.
Step 402: first evaporation Cr thin metal layer 203 on SiNx film 202,0.05 micron of thickness forms micro reflector array photoresist figure by photoetching process, and wet etching removes Cr, removes photoresist, and forms masking layer 203;
The technological process corresponding with this step is shown in Fig. 4-2, and Fig. 4-2 is the synoptic diagram that forms micro reflector array figure masking layer according to the embodiment of the invention on the SiNx film.
Step 403: adopt SF6 gas, with the flow of 120sccm and the power plasma dry isotropic etch SiNx film 202 of 60w, form the micro reflector array figure;
The technological process corresponding with this step is shown in Fig. 4-3, and Fig. 4-3 is the synoptic diagram that forms the micro reflector array figure according to embodiment of the invention etching SiNx film.
Step 404: on the SiNx micro reflector array figure that etching forms, adopt wet etching to remove Cr masking layer 203, LPCVD deposit growth SiO2 film (204), thickness is 2 microns;
The technological process corresponding with this step is shown in Fig. 4-4, and Fig. 4-4 is for removing masking layer according to the embodiment of the invention, growth SiO on the SiNx micro reflector array figure that forms
2The synoptic diagram of film.
Step 405: first evaporation Cr thin metal layer (205) on SiO2 film 204, form through hole photoresist figure by photoetching process, wet etching is removed Cr metal level 205, removes photoresist, and forms Cr masking layer 205;
The technological process corresponding with this step is shown in Fig. 4-5, and Fig. 4-5 is according to the SiO of the embodiment of the invention in growth
2Form the synoptic diagram of masking layer on the film.
Step 406: under the protection of Cr metal shadowing layer 205, adopt CHF3 gas, with the flow of 120sccm and the power isotropic etching SiO2 film 204 of 60w, form the via-hole array figure;
The technological process corresponding with this step is shown in Fig. 4-6, and Fig. 4-6 is the synoptic diagram that forms the via-hole array figure according to the embodiment of the invention on the masking layer that forms.
Step 407: after wet etching is removed Cr masking layer 205, on SiO2 sacrifice layer 204, adopt LPCVD deposit growth SiNx film (206), thickness is 2 microns;
The technological process corresponding with this step is shown in Fig. 4-7, and Fig. 4-7 is for removing masking layer according to the embodiment of the invention, the synoptic diagram of growth SiNx film on the via-hole array figure that forms.
Step 408: first evaporation Cr thin metal layer 207 on SiNx film 206, thickness is 0.05 micron, by the photoresist figure of photoetching process formation supporting construction, wet etching is removed Cr then, removes photoresist, and forms masking layer 207;
The technological process corresponding with this step is shown in Fig. 4-8, and Fig. 4-8 is the synoptic diagram that forms masking layer according to the embodiment of the invention on the SiNx film.
Step 409: under the protection of Cr masking layer 207, adopt SF6 gas, with the flow of 120sccm and the power isotropic etching SiNx film 206 of 60w, form the supporting construction array pattern;
The technological process corresponding with this step is shown in Fig. 4-9, and Fig. 4-9 is the synoptic diagram that forms the supporting construction array pattern according to the embodiment of the invention.
Step 410: after wet method is removed Cr masking layer 207, first evaporation Au metal level 208 on the SiNx supporting construction figure 206 that has formed, thickness is 0.2 micron, form supporting construction metal level photoresist figure by photoetching process, wet etching removes Au, removes photoresist, and forms required metal level 208; Adopt dual surface lithography technology and dry plasma etch to etch away silicon substrate back side SiNx film 209 respectively then at the silicon substrate back side, expose silicon base 201;
The technological process corresponding with this step is shown in Fig. 4-10, and Fig. 4-10 forms required metal level according to the embodiment of the invention on the supporting construction array pattern, expose the synoptic diagram of silicon base at silicon substrate back-etching SiNx film.
Step 411: adopt the KOH solution of 40% mass concentration, under 70 degree, wet etching method is removed the silicon base 201 in the window and the SiO2 sacrifice layer 204 of the positive deposit of silicon chip, discharges the double membrane structure micro reflector array of high fill factor;
The technological process corresponding with this step is shown in Fig. 4-11, and Fig. 4-11 is the SiO according to silicon base in the embodiment of the invention removal window and the positive deposit of silicon chip
2Sacrifice layer discharges the synoptic diagram of the double membrane structure micro reflector array of high fill factor.
Step 412:, finish high fill factor double membrane structure optics and read device of non-refrigerated infrared focal plane array at the Au metallic reflector 210 of 0.01 micron of the direct evaporation thickness of mirror back surface of the double membrane structure micro reflector array of the high fill factor that has discharged;
The technological process corresponding with this step is shown in Fig. 4-12, and Fig. 4-12 is according to the metallic reflector of the embodiment of the invention at mirror back surface evaporation desired thickness, forms the synoptic diagram of non-refrigerate infrared focal plane array seeker.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1, a kind of non-refrigerate infrared focal plane array seeker is characterized in that, this detector comprises:
By double-deck silicon nitride SiN
xSupporting construction that film forms respectively and micro-mirror structure;
This supporting construction is a detector array, comprises a plurality of micro-joist units, and this supporting construction is used to absorb infrared radiation simultaneously also as the infrared radiation absorption layer; This micro-joist unit is a detector cells, and its surface further is coated with layer of metal, is used for infrared reflecting, improves the absorption efficiency of supporting construction for infrared radiation;
This micro-mirror structure is used for forming the infrared absorption resonant cavity with supporting construction, absorbs infrared radiation, improves the absorption efficiency of supporting construction for infrared radiation, simultaneously the catoptron of also reading as optical signalling;
This supporting construction and this micro-mirror structure pass through SiN
xMaterial connects.
2, non-refrigerate infrared focal plane array seeker according to claim 1 is characterized in that, the back side of described micro-reflector further is coated with layer of metal, is used for reflect visible light, for the optical signalling read-out system provides input signal.
3, non-refrigerate infrared focal plane array seeker according to claim 1 and 2 is characterized in that, described metal is golden Au or aluminium Al.
4, a kind of method for making of non-refrigerate infrared focal plane array seeker is characterized in that, this method adopts full hollow out body silicon and surface film technology to combine on manufacture craft, specifically comprises:
A, on silicon substrate, adopt low-pressure chemical vapor deposition LPCVD growth SiN
xFilm;
B, the SiN that is growing
xEtch micro reflector array on the film;
C, on the micro reflector array that etching forms deposit growing silicon oxide SiO
2Sacrifice layer, etching forms through hole;
D, LPCVD growth SiNx film forms supporting construction figure masking layer by photoetching process as supporting layer on the SiNx supporting layer on the through hole that forms, and adopts dry plasma etch SiNx film then, forms the supporting construction figure;
E, on the SiNx supporting construction figure that forms evaporated metal layer;
F, at silicon substrate back-etching windowing, erode silicon substrate and SiO in the window
2Sacrifice layer;
G, at micro reflector array back side evaporation metal, form non-refrigerate infrared focal plane array seeker.
5, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that, described steps A comprises:
＜100〉to adopt the LPCVD growth thickness be 0.1 to 2 micron SiN for the tow sides of silicon chip
xFilm.
6, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that, described step B comprises:
B1, on the SiNx film, form micro reflector array figure masking layer by photoetching process;
B2, dry plasma etch SiNx film form the micro reflector array figure;
7, the method for making of non-refrigerate infrared focal plane array seeker according to claim 6 is characterized in that, described step B1 comprises:
Evaporating Al or Cr thin metal layer on the SiNx film form micro reflector array photoresist figure by photoetching process, and wet etching removes Al or Cr, removes photoresist, and forms masking layer;
Perhaps, then behind thin Al of evaporation on the SiNx film or Cr metal level, form masking layer by stripping technology if adopt the photoetching of cloudy version.
8, the method for making of non-refrigerate infrared focal plane array seeker according to claim 6 is characterized in that, described step B2 comprises:
Adopt SF
6Gas, with the flow of 120sccm and the power isotropic etching SiNx film of 60w, form the micro reflector array figure.
9, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that, described step C comprises:
After C1, wet etching are removed masking layer, adopt LPCVD or PECVD deposit growth SiO on the micro reflector array that etching forms
2Film is as sacrifice layer, and thickness is 1.5 to 2.5 microns;
C2, at SiO
2Evaporating Al or Cr thin metal layer on the film form through hole photoresist figure by photoetching process, and wet etching removes Al or Cr, removes photoresist, and forms masking layer; If adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology;
C3, utilize the protection of masking layer, adopt CHF
3Gas, with the flow of 120sccm and the power isotropic etching SiO of 60w
2Film forms the via-hole array figure.
10, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that,
Described in the step D on the through hole that forms LPCVD growth SiN
xFilm comprises as supporting layer: after wet etching is removed masking layer, at SiO
2Adopting LPCVD deposit growth thickness on the sacrifice layer is that 0.1 to 2 micron SiNx film is as supporting layer;
Comprising by photoetching process formation supporting construction figure masking layer on the SiNx supporting layer described in the step D: first evaporating Al or Cr thin metal layer on the SiNx film, form supporting construction photoresist figure by photoetching process, wet etching removes Al or Cr, remove photoresist, form masking layer, if adopt the photoetching of cloudy version, then thin Al of evaporation or Cr metal level form masking layer by stripping technology;
Adopt dry plasma etch SiNx film described in the step D, form the supporting construction figure and comprise: adopt SF
6Gas, with the flow of 120sccm and the power isotropic etching SiN of 60w
xFilm forms the supporting construction array pattern.
11, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that, described step e comprises:
First evaporating Al or Au metal level on the SiNx supporting construction figure that has formed, form supporting construction metal level photoresist figure by photoetching process, wet etching removes Al or Au, remove photoresist, form required metal level, if adopt the photoetching of cloudy version, then evaporating Al or Au metal level form required metal level by stripping technology.
12, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that,
Comprise at silicon substrate back-etching windowing described in the step F: adopt dual surface lithography technology at the silicon substrate back side, a photoetching, three times the plasma dry etching etches away SiN respectively
x/ SiO
2/ SiN
x/ film exposes silicon base;
Erode silicon substrate and SiO in the window described in the step F
2Sacrifice layer comprises: the silicon base in employing wet etching method or the dry etching method removal window and the SiO of the positive deposit of silicon chip
2Sacrifice layer discharges the double membrane structure micro reflector array of high fill factor.
13, the method for making of non-refrigerate infrared focal plane array seeker according to claim 4 is characterized in that, described step G comprises:
Al or Au metal level at the direct evaporation desired thickness of mirror back surface of the double membrane structure micro reflector array of the high fill factor that has discharged form non-refrigerate infrared focal plane array seeker.
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101871817B (en) * | 2009-04-27 | 2012-07-18 | 昆明物理研究所 | Hybrid-type pyroelectric uncooled focal plane detector and manufacturing process thereof |
| CN101726364B (en) * | 2009-11-18 | 2011-04-27 | 中国科学院上海技术物理研究所 | Method for enhancing internal absorption factor of infrared focal plane array device |
| CN101825516A (en) * | 2010-05-04 | 2010-09-08 | 电子科技大学 | Device and method for testing infrared focal plane array device |
| CN102244190B (en) * | 2010-05-10 | 2013-07-10 | 中国科学院微电子研究所 | Thermo-electric pile infrared detector |
| CN102226719B (en) * | 2011-04-08 | 2012-12-19 | 华中科技大学 | Infrared absorption structure and uncooled infrared detector based on infrared absorption structure |
| CN103241706B (en) * | 2012-02-06 | 2016-05-18 | 中国科学院微电子研究所 | The manufacture method of the bi-material microcantilevel of Stress match |
| CN103569946B (en) * | 2012-07-31 | 2015-10-07 | 昆山光微电子有限公司 | Non-brake method light reads infrared imaging focus plane array detector preparation method |
| CN102963861B (en) * | 2012-11-12 | 2015-07-29 | 北京大学 | A kind of method determining the sacrifice layer corrosion time in real time |
| CN108254082B (en) * | 2018-01-11 | 2020-05-08 | 中国科学院微电子研究所 | Diode type non-refrigeration infrared detector and preparation method thereof |
| WO2020242384A1 (en) * | 2019-05-30 | 2020-12-03 | Meridian Innovation Pte Ltd | Metamaterials-based focusing lenses for thermal imaging |
| CN113188669B (en) * | 2021-04-29 | 2023-06-27 | 上海翼捷工业安全设备股份有限公司 | Infrared absorption composite film structure and carbon dioxide pyroelectric infrared detector |
-
2006
- 2006-09-06 CN CNB2006101128845A patent/CN100561148C/en active Active
Non-Patent Citations (5)
| Title |
|---|
| High Sensitivity Photomechanical MW-LWIR Imaging usingan Uncooled MEMS Microcantilever Array and OpticalReadout. J. Zhao.SPIE,Vol.5783 . 2005 |
| High Sensitivity Photomechanical MW-LWIR Imaging usingan Uncooled MEMS Microcantilever Array and OpticalReadout. J.Zhao.SPIE,Vol.5783. 2005 * |
| Optically Readable Bi-material Infrared Detector. Tohru Ishizuya, Junji Suzuki, Keiichi Akagawa, TsuneyukiKazama.SPIE,Vol.4369 . 2001 |
| Optically Readable Bi-material Infrared Detector. Tohru Ishizuya,Junji Suzuki,Keiichi Akagawa,TsuneyukiKazama.SPIE,Vol.4369. 2001 * |
| 基于MEMS 技术的红外成像焦平面阵列. 李超波，焦斌斌，石莎莉，叶甜春，陈大鹏，张青川，郭哲颖，董凤良，伍小平.半导体学报，第27卷第1期. 2006 |
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