CN100559595C - The BiFeO that is used for ferroelectric memory 3-based sandwich structural membrane and preparation method thereof - Google Patents
The BiFeO that is used for ferroelectric memory 3-based sandwich structural membrane and preparation method thereof Download PDFInfo
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- CN100559595C CN100559595C CNB2008101583543A CN200810158354A CN100559595C CN 100559595 C CN100559595 C CN 100559595C CN B2008101583543 A CNB2008101583543 A CN B2008101583543A CN 200810158354 A CN200810158354 A CN 200810158354A CN 100559595 C CN100559595 C CN 100559595C
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000012528 membrane Substances 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000002243 precursor Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims abstract description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 30
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 28
- 150000002500 ions Chemical class 0.000 claims description 23
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 16
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 10
- 238000005303 weighing Methods 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000007796 conventional method Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910021644 lanthanide ion Inorganic materials 0.000 claims description 4
- 210000002615 epidermis Anatomy 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 230000000536 complexating effect Effects 0.000 claims description 2
- 230000007062 hydrolysis Effects 0.000 claims description 2
- 238000006460 hydrolysis reaction Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000010287 polarization Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000002156 mixing Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000011572 manganese Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 2
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 2
- JVOQKOIQWNPOMI-UHFFFAOYSA-N ethanol;tantalum Chemical compound [Ta].CCO JVOQKOIQWNPOMI-UHFFFAOYSA-N 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- FYDKNKUEBJQCCN-UHFFFAOYSA-N lanthanum(3+);trinitrate Chemical compound [La+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O FYDKNKUEBJQCCN-UHFFFAOYSA-N 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- DBRMBYFUMAFZOB-UHFFFAOYSA-N molybdenum nitric acid Chemical compound [Mo].[N+](=O)(O)[O-] DBRMBYFUMAFZOB-UHFFFAOYSA-N 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention relates to a kind of BiFeO that is used for ferroelectric memory
3-based sandwich structural membrane and preparation method thereof belongs to the microelectronics new material technology field.Described BiFeO
3The upper and lower top layer component of-based sandwich structural membrane is BiFe
1-xH
xO
3, tetravalence and the tetravalence above high valence ion of H for mixing, the intermediate layer component is BiFe
1-xL
xO
3, trivalent and the trivalent following ion of L for mixing; Its preparation method makes the top layer that precursor solution is deposited on different materials with spin-coating method for adopting chemical solution method combination annealing process layer by layer.The present invention is by adopting special sandwich structure, greatly reduce the leakage current of film, effectively reduce coercive field simultaneously, significantly improve the electric charge confining force, under 500 ℃～600 ℃ annealing temperature, obtained having low-leakage current, big residual polarization, low coercive field, well the ferroelectric thin film of electric charge confining force has good practical prospect in the ferroelectric memory in future.
Description
Technical field
The present invention relates to a kind of BiFeO that is used for ferroelectric memory
3-based sandwich structural membrane and preparation method thereof belongs to the microelectronics new material technology field.
Background technology
BiFeO
3Material has simple perovskite structure, at room temperature have simultaneously two kinds structurally ordered be ferroelectric in order (T
C～830 ℃) and G-sections magnetic order (T
N～370 ℃), be to have one of ferroelectricity and ferromagnetic ferromagnetic electric material under the minority room temperature simultaneously.Recently, the researcher has proved BiFeO
3Have good ferroelectric properties, be hopeful to be applied in the ferroelectric memory device.But, the BiFeO that utilizes chemical solution method to prepare
3The material leakage current is higher, in addition, because BiFeO
3Very high (the T of the Curie point of film
C～830 ℃), and preparation temperature very low (≤550 ℃), it is aging that this makes that in preparation process film just begins experience, thereby caused BiFeO
3Therefore the high coercive field of-base film and low electric charge confining force have limited the application of this material.Although researcher is taked the way at beta-position doping high valence ion (〉=4), can reduce coercive field to a certain extent, bad as technical process control, leakage current is very high usually, and the rectangle degree of electric hysteresis loop is relatively poor; Doping trivalent lanthanide series, when reducing leakage current and coercive field, residual polarization decreases; Trivalent ion such as Mn
3+And Cr
3+Doping, improving the residual polarization value, when reducing leakage current, also improved coercive field; Mixing altogether of divalence and quadrivalent ion is undoubtedly a kind of reduction leakage current, improve film electric charge confining force with the effective ways that reduce coercive field, but also can't reach the requirement of application at present.
Summary of the invention
For solving BiFeO
3The ferroelectric thin film leakage current is higher, coercive field is higher and easy problem such as aging, and the present invention aims to provide a kind of BiFeO that is used for ferroelectric memory
3-based sandwich structural membrane has obtained having high residual polarization, the ferroelectric thin film of low-leakage current, low coercive field, high electric charge confining force, has good practical prospect in the ferroelectric memory device in future.
The present invention also provides described BiFeO
3The preparation method of-based sandwich structural membrane.
The present invention is achieved by the following technical solutions:
The BiFeO that is used for ferroelectric memory of the present invention
3-based sandwich structural membrane, its special character is: upper and lower skin-material is the BiFeO of doping tetravalence and the above high valence ion of tetravalence
3Film, intermediate layer material are the following BiFeO of ion at a low price of doping trivalent and trivalent
3Film; The above high valence ion of described tetravalence and tetravalence is Ti
4+, Zr
4+, Hf
4+, V
5+, Ta
5+, Nb
5+, Mo
6+Or W
6+In a kind of; The following ion at a low price of described trivalent and trivalent is Mn
3+, Cr
3+, Zn
2+, Ni
2+, Cu
2+Or a kind of in the lanthanide ion.
The component of described upper and lower skin-material is BiFe
1-xH
xO
3, wherein, x is the molar equivalent of dopant ion H, 0＜x≤0.02, and H is Ti
4+, Zr
4+, Hf
4+, V
5+, Ta
5+, Nb
5+, Mo
6+Or W
6+In a kind of.
The component of described intermediate layer material is BiFe
1-xL
xO
3, wherein, x is the molar equivalent of dopant ion L, and its scope is 0＜x≤0.05, and L is Mn
3+, Cr
3+, Zn
2+, Ni
2+, Cu
2+Or a kind of in the lanthanide ion.
The thickness of described upper and lower skin-material is 10～50nm; The thickness of described intermediate layer material is 100～200nm.
When described intermediate layer material was divalent ion when dopant ion, its thickness is more excellent to be 100～150nm, and when dopant ion was trivalent ion, its thickness is more excellent to be 150～200nm.
The preparation method of sandwich structure film of the present invention, adopt following steps:
(1) preparation of upper and lower top layer and intermediate layer precursor solution: adopt chemical solution method, the raw material that take by weighing bismuth nitrate, ferric nitrate and contain doped chemical by stoichiometric proportion, be dissolved in the ethylene glycol, titanium, tantalum source are for preventing that hydrolysis should be earlier and the acetylacetone,2,4-pentanedione complexing, be mixed with precursor solution according to a conventional method, solution concentration is 0.05mol/L～0.15mol/L;
(2) preparation of thin-film material: adopt annealing process layer by layer, to descend the top layer precursor solution to be deposited on the backing material with spin-coating method, intermediate layer and upper epidermis precursor solution are deposited on separately the lower film successively, then material is placed on the hot plate and dries, the film of drying is placed quick anneal oven heat treatment, and heat treatment temperature is 500 ℃～600 ℃, and nitrogen atmosphere is adopted in annealing, repeat this step, film thickness meets the requirements up to the top layer;
(3) the sandwich structure film that will reach thickness requirement is annealed half an hour in 500 ℃～600 ℃ scopes under nitrogen atmosphere, obtains dense film.
Wherein, described backing material is preferably Pt/Ti/SiO
2/ Si, Pt/TiO
2/ SiO
2A kind of among/Si, LNO/Si or the ITO/Si.
The invention has the beneficial effects as follows: by adopting special sandwich structure, greatly reduce the leakage current of film, simultaneously, effectively reduced BiFeO
3The film coercive field, and obviously improved the electric charge confining force, obtained having big residual polarization, low-leakage current, low coercive field under 500 ℃～600 ℃ annealing temperature, well the ferroelectric thin film of electric charge confining force has good practical prospect in the ferroelectric memory in future.
Description of drawings
Fig. 1 is the sandwich structure schematic diagram of film of the present invention
The BiFeO that Fig. 2 obtains for embodiment 1
3The electric hysteresis loop collection of illustrative plates of-based sandwich structure.
The BiFeO that Fig. 3 obtains for embodiment 1
3The retention performance of-based sandwich structure.
Embodiment
The invention will be further described below in conjunction with specific embodiment.
Embodiment 1
The BiFeO that is used for ferroelectric memory of present embodiment
3-based sandwich structural membrane, its upper and lower skin-material is BiFe
0.98Ti
0.02O
3Film, intermediate layer material are BiFe
0.98Zn
0.02O
3
The preparation method of above-mentioned sandwich structure film is:
(1) taking by weighing mol ratio respectively is 1.02: 0.98: 0.02 bismuth nitrate, ferric nitrate and butyl titanate, with 40ml ethylene glycol dissolving bismuth nitrate and ferric nitrate, be configured to solution A, get with the isopyknic acetylacetone,2,4-pentanedione of butyl titanate and form complex solution B, after solution A and B stirred 40 minutes respectively, mixed preparing concentration was the BiFe of 0.10mol/L
0.98Ti
0.02O
3Precursor solution; The bismuth nitrate, ferric nitrate and the zinc nitrate that took by weighing mol ratio respectively and be 1.02: 0.98: 0.02 are dissolved in the 40ml ethylene glycol, are mixed with the BiFe that concentration is 0.10mol/L according to a conventional method
0.98Zn
0.02O
3Precursor solution;
(2) adopt spin-coating method will descend the precursor solution on top layer to be deposited on backing material Pt/Ti/SiO
2On/the Si, material is placed on the hot plate dries then, the film of drying is placed quick anneal oven heat treatment, heat treatment temperature is 550 ℃, and nitrogen atmosphere is adopted in annealing, repeats this step, reaches 35nm up to thickness; The precursor solution of intermediate layer material is deposited on following table layer film surface, then material is placed on hot plate oven dry, the film of drying is placed quick anneal oven heat treatment, heat treatment temperature is 550 ℃, nitrogen atmosphere is adopted in annealing, repeats this step, reaches 100nm up to this layer film thickness; The upper epidermis film preparation method and following table layer film identical, making film thickness is 35nm.
The sandwich structure film that will reach thickness requirement is annealed half an hour, is obtained dense film for 550 ℃ under nitrogen atmosphere.
Embodiment 2
The BiFeO that is used for ferroelectric memory of present embodiment
3-based sandwich structural membrane, its upper and lower skin-material is BiFe
0.98Zr
0.02O
3Film, intermediate layer material are BiFe
0.97La
0.03O
3
The preparation method of above-mentioned sandwich structure film is:
(1) taking by weighing mol ratio respectively is 1.02: 0.98: 0.02 bismuth nitrate, ferric nitrate and zirconium iso-propoxide, with 40ml ethylene glycol dissolving bismuth nitrate and ferric nitrate, is mixed with the BiFe that concentration is 0.10mol/L
0.98Zr
0.02O
3Precursor solution; The bismuth nitrate, ferric nitrate and the lanthanum nitrate that took by weighing mol ratio respectively and be 1.02: 0.97: 0.03 are dissolved in the 40ml ethylene glycol, are mixed with the BiFe that concentration is 0.10mol/L according to a conventional method
0.97La
0.03O
3Precursor solution;
(2) employing deposits precursor solution successively with embodiment 1 identical method, and the precursor solution on following top layer is deposited on the backing material LNO/Si, and heat treatment temperature is 600 ℃, and the top layer film thickness is 45nm about making, and middle table layer film thickness is 150nm.The sandwich structure film that will reach thickness requirement is annealed half an hour, is obtained dense film for 600 ℃ under nitrogen atmosphere.
Embodiment 3
The BiFeO that is used for ferroelectric memory of present embodiment
3-based sandwich structural membrane, its upper and lower skin-material is BiFe
0.99Ta
0.01O
3Film, intermediate layer material are BiFe
0.95Mn
0.05O
3
The preparation method of above-mentioned sandwich structure film is:
(1) taking by weighing mol ratio respectively is 1.02: 0.99: 0.01 bismuth nitrate, ferric nitrate and ethanol tantalum, with 40ml ethylene glycol dissolving bismuth nitrate and ferric nitrate, be configured to solution A, get with the isopyknic acetylacetone,2,4-pentanedione of ethanol tantalum and form complex solution B, after solution A and B stirred 40 minutes respectively, mixed preparing concentration was the BiFe of 0.05mol/L
0.99Ta
0.01O
3Precursor solution; The bismuth nitrate, ferric nitrate and the manganese nitrate that took by weighing mol ratio respectively and be 1.02: 0.95: 0.05 are dissolved in the 40ml ethylene glycol, are mixed with the BiFe of 0.15mol/L
0.95Mn
0.05O
3The film precursor solution.
(2) step of preparation thin-film material is with embodiment 1, and heat treatment temperature is 520 ℃, and the top layer film thickness is 25nm about making, and intermediate layer film thickness is 180nm.
The sandwich structure film that will reach thickness requirement is annealed half an hour, is obtained dense film for 580 ℃ under nitrogen atmosphere.
Embodiment 4
The BiFeO that is used for ferroelectric memory of present embodiment
3-based sandwich structural membrane, its upper and lower skin-material is BiFe
0.97Mo
0.03O
3Film, intermediate layer material are BiFe
0.95Mn
0.05O
3
The preparation method of above-mentioned sandwich structure film is:
(1) taking by weighing mol ratio respectively is 1.02: 0.97: 0.03 bismuth nitrate, ferric nitrate and nitric acid molybdenum, with 40ml ethylene glycol dissolving bismuth nitrate and ferric nitrate, is mixed with the BiFe that concentration is 0.10mol/L
0.97Mo
0.03O
3Precursor solution; The bismuth nitrate, ferric nitrate and the manganese nitrate that took by weighing mol ratio respectively and be 1.02: 0.95: 0.05 are dissolved in the 40ml ethylene glycol, are mixed with the BiFe of 0.10mol/L
0.95Mn
0.05O
3The film precursor solution.
(2) step of preparation thin-film material is with embodiment 1, and heat treatment temperature is 560 ℃, and the top layer film thickness is 15nm about making, and intermediate layer film thickness is 200nm.
The sandwich structure film that will reach thickness requirement is annealed half an hour, is obtained dense film for 550 ℃ under nitrogen atmosphere.
Claims (7)
1. BiFeO who is used for ferroelectric memory
3-based sandwich structural membrane is characterized in that: upper and lower skin-material is the BiFeO of doping tetravalence and the above high valence ion of tetravalence
3Film, intermediate layer material are the following BiFeO of ion at a low price of doping trivalent and trivalent
3Film; The above high valence ion of described tetravalence and tetravalence is Ti
4+, Zr
4+, Hf
4+, V
5+, Ta
5+, Nb
5+, Mo
6+Or W
6+In a kind of; The following ion at a low price of described trivalent and trivalent is Mn
3+, Cr
3+, Zn
2+, Ni
2+, Cu
2+Or a kind of in the lanthanide ion.
2. sandwich structure film according to claim 1 is characterized in that: the component of described upper and lower skin-material is BiFe
1-xH
xO
3, wherein, x is the molar equivalent of dopant ion H, 0＜x≤0.02, and H is Ti
4+, Zr
4+, Hf
4+, V
5+, Ta
5+, Nb
5+, Mo
6+Or W
6+In a kind of.
3. sandwich structure film according to claim 1 is characterized in that: the component of described intermediate layer material is BiFe
1-xL
xO
3, wherein, x is the molar equivalent of dopant ion L, and its scope is 0＜x≤0.05, and L is Mn
3+, Cr
3+, Zn
2+, Ni
2+, Cu
2+Or a kind of in the lanthanide ion.
4. according to claim 1,2 or 3 described sandwich structure films, it is characterized in that: the thickness of described upper and lower skin-material is 10～50nm; The thickness of described intermediate layer material is 100～200nm.
5. sandwich structure film according to claim 4 is characterized in that: when described intermediate layer material was divalent ion when dopant ion, its thickness was 100～150nm, and when dopant ion was trivalent ion, its thickness was 150～200nm.
6. the preparation method of the described sandwich structure film of claim 1 is characterized in that adopting following steps:
(1) preparation of upper and lower top layer and intermediate layer precursor solution: adopt chemical solution method, the raw material that take by weighing bismuth nitrate, ferric nitrate and contain doped chemical by stoichiometric proportion, be dissolved in the ethylene glycol, titanium, tantalum source are for preventing that hydrolysis should be earlier and the acetylacetone,2,4-pentanedione complexing, be mixed with precursor solution according to a conventional method, solution concentration is 0.05mol/L～0.15mol/L;
(2) preparation of thin-film material: adopt annealing process layer by layer, to descend the top layer precursor solution to be deposited on the backing material with spin-coating method, intermediate layer and upper epidermis precursor solution are deposited on separately the lower film successively, then material is placed on the hot plate and dries, the film of drying is placed quick anneal oven heat treatment, and heat treatment temperature is 500 ℃～600 ℃, and nitrogen atmosphere is adopted in annealing, repeat this step, meet the requirements up to film thickness;
(3) the sandwich structure film that will reach thickness requirement is annealed half an hour in 500 ℃～600 ℃ scopes under nitrogen atmosphere, obtains dense film.
7. the preparation method of sandwich structure film according to claim 6 is characterized in that: described backing material is Pt/Ti/SiO
2/ Si, Pt/TiO
2/ SiO
2A kind of among/Si, LNO/Si or the ITO/Si.
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| CN101789490B (en) * | 2010-01-28 | 2012-09-05 | 复旦大学 | Ferroelectric oxide/semiconductor composite film diode resistance change memory |
| CN102683577B (en) * | 2011-10-28 | 2013-10-30 | 闫静 | BiFe1-yMnyO3 epitaxial composite film and preparation method thereof |
| CN103058646B (en) * | 2012-11-07 | 2014-12-24 | 陕西科技大学 | Method for preparing Tb/Cr-codoped high-remanent-polarization BiFeO3 film by sol-gel process |
| CN103601250B (en) * | 2013-11-04 | 2015-06-24 | 陕西科技大学 | Layer-by-layer alternatively doped low-leakage-current BiFeO3 film and preparation method thereof |
| CN104681710A (en) * | 2015-02-13 | 2015-06-03 | 中国科学院物理研究所 | Electromagnetic conversion device |
| CN109087997A (en) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | Manufacturing method, ferroelectric tunnel junction unit, memory component and its write-in of ferroelectric film and read method |
| CN107814567B (en) * | 2017-11-03 | 2020-10-02 | 天津师范大学 | Extrinsic ferroelectric ceramic device with lower coercive field and preparation method thereof |
| CN110752289A (en) * | 2018-07-23 | 2020-02-04 | 天津理工大学 | Based on MnZn codoped BiFeO3Resistive random access memory of thin film and preparation method thereof |
| CN110395768A (en) * | 2018-10-26 | 2019-11-01 | 济南大学 | A kind of preparation method of flexibility self poling ferrous acid bismuth-based thin films |
| CN109761596B (en) * | 2019-03-15 | 2021-09-14 | 中南大学 | La and Zn co-doped bismuth ferrite film and preparation method and application thereof |
| CN111755447B (en) * | 2020-07-13 | 2023-05-12 | 湘潭大学 | High-density ferroelectric memory cell based on multiple logic states and regulation and control method thereof |
| CN114409395B (en) * | 2021-12-20 | 2023-03-28 | 北京科技大学 | Ferroelectric photovoltaic film with adjustable polarization and band gap and preparation method thereof |
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| 溶胶－凝胶法制备掺钙钛酸锶铋铁电薄膜. 范素华等.硅酸盐学报，第36卷第2期. 2008 |
| 溶胶－凝胶法制备掺钙钛酸锶铋铁电薄膜. 范素华等.硅酸盐学报，第36卷第2期. 2008 * |
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