CN100554521C - The room temperature preparation method of titania nanotube combined electrode - Google Patents
The room temperature preparation method of titania nanotube combined electrode Download PDFInfo
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- CN100554521C CN100554521C CNB2008101239141A CN200810123914A CN100554521C CN 100554521 C CN100554521 C CN 100554521C CN B2008101239141 A CNB2008101239141 A CN B2008101239141A CN 200810123914 A CN200810123914 A CN 200810123914A CN 100554521 C CN100554521 C CN 100554521C
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Abstract
A kind of room temperature preparation method of titania nanotube combined electrode relates to electrode materials and semiconductor film preparation technology.The method of its preparation: at first adopt the method for magnetron sputtering on substrate, to deposit pure titanium film, sputtering parameter: sputtering power 105-150W, operating pressure 0.1-0.5Pa, substrate does not heat, and sputtering time is 0.5-2h; The anodic oxidation titanium film obtains the TiO of regular arrangement at ambient temperature then
2Nano-tube array, the anodic oxidation parameter is: the titanium film sample is an anode, and platinized platinum is as negative electrode, and two interpolar distance is 10-50cm, and material mass is than being H in the electrolytic solution
3PO
4: HF: H
2O=10: 0.5-1: 100, constant voltage is 10-20V; This electrode can be widely used in transparent optical device (as dye sensitization solar battery, electrochromic device etc.) and gas sensor, also is suitable for the assembling of microminiaturized device and the preparation of flexible electrode.
Description
Technical field
The present invention relates to a kind of at ambient temperature by obtaining the method for titanium dioxide nanotube array electrode on the titanium film on the anodic oxidation substrates of different, specially refer to the electrochemical preparation method of the Nano tube array of titanium dioxide of the high regularity of preparation on the vacuum technology of preparing of titanium film and the substrates of different, belong to semiconductor film fabricating technology field.
Background technology
Nano-TiO
2It is a kind of important inorganic functional material, because of having photoelectricity conversion, air-sensitive, dielectric effect and excellent advantages such as photocatalysis performance, make it important application prospects be arranged, become the focus of domestic and international research in fields such as solar cell, transmitter, dielectric materials, self-cleaning material and photocatalysis to degrade organic matter.Calendar year 2001 U.S. scientist Varghese utilizes the method for electrochemistry sunization, has prepared TiO first
2Nano-tube array (Dawei, G.J.Mater.Res., 2001,16:3331), cause people's very big concern.With respect to other preparation method, as template synthesis method, hydrothermal synthesis method etc., anonizing is comparatively simple, and with low cost and be easy to fix, and therefore is preparation TiO
2The topmost method of nano-tube array.
Present anodised research concentrates on by adjustment and optimizes the TiO that the direct oxidation on titanium foil of anodised parameter obtains different performance
2Nano-tube array.But prepared TiO
2Nanotube all is based on the titanium foil, so greatly restricted T iO
2The application of nanotube.Exist subject matter to be because there is the opaque titanium metal of 0.1-1mm thickness in the nanotube bottom, make some devices (as gas sensor) cause short circuit easily, limited simultaneously at the transparent optical device (as dye sensitization solar battery, electrochromic device) application also is not suitable for the assembling of microminiaturized device; Secondly, under the environment of vibration, be that the device of substrate lost efficacy in default of physical strength easily with the titanium foil.So the needs consideration is a kind of can both prepare TiO at any base material
2The novel method of nano-tube array.Mor research group in 2005 (Mor, G.K.Adv.Funct.Mater., 2005,15:1291) under 5 ℃ of conditions of low temperature, electrolyte is CH
3Under the COOH/HF condition respectively on glass substrate and conductive glass anode thin film of titanium oxide (the titanium film sputter temperature is 500 ℃) obtain TiO
2Nanotube; Other researchers also pass through with quadrat method at success (Yu, X.F.NanoTechnology, 2006,17:808 on silicon chip, glass substrate etc. under the cryogenic condition; Macak, J.M.Chemical Physics Letters, 2006,428:421; Chu, S.Z.Adv.Funct.Mater., 2005,15:1343) obtain TiO
2Nano-tube array; Leenheer (Leenheer, A.J.J.Mater.Res., 2007,22 (3): 681) adopt same procedure at ambient temperature in 2007 at CH
3In the COOH/HF system on conductive glass anode oxidation titanium film (underlayer temperature of sputter is 500 ℃), but can only obtain nano-porous structure, so need select suitable inorganic electrolyte liquid to prepare TiO fast at ambient temperature
2Nanotube though glycerol system can form, takes oversizely, and cost is higher; Secondly, for in the compliant conductive substrate, preparing nano-tube array, its heatproof is generally less than 200 ℃, can not adopt the method for high temperature deposition, must under the condition of normal temperature, prepare and have highdensity titanium film, so need at room temperature the pure titanium film of preparation density height, good uniformity under the situation of heated substrate not, to guarantee in the anode oxidation process, film is difficult for coming off from substrate, simultaneously for substrates such as conductive glass, obtain the high-density titanium film if also can at room temperature deposit, also will reduce the cost of its preparation film.
Summary of the invention:
Thereby the titanium film that the purpose of this invention is to provide on a kind of anodic oxidation substrates of different at ambient temperature obtains TiO fast
2The method of nanometer tube combination electrode.This method can make TiO
2Nanometer tube combination electrode is applied to transparent optical device (as dye sensitization solar battery, electrochromic device etc.) and gas sensor, also is suitable for the assembling of microminiaturized device and the preparation of flexible electrode.
The present invention realizes that the above-mentioned technical scheme that purpose adopted is:
1. the room temperature preparation of the pure titanium film of high-density on the substrate:
Elder generation's ultrasonic cleaning substrate, after sputter vacuum tightness reaches requirement, at sputtering power 105-150W, ar pressure 0.1-0.5Pa, substrate does not heat, and sputtering time is the parameter deposit titanium film of 0.5-2h;
2. TiO
2The room temperature preparation of nanometer tube combination electrode:
Sample after the sputter is nested on the metal fixture as anode, after whole sample be immersed in fully carry out anodic oxidation in the electrolytic solution under the room temperature; Wherein platinized platinum is as negative electrode, and two interpolar distance is 10-50cm, and material mass is than being H in the electrolytic solution
3PO
4: HF: H
2O=10: 0.5-1: 100, constant voltage is 10-20V, the reaction times is 30-60min.
The room temperature preparation method of above-mentioned titania nanotube combined electrode is characterized in that: 2. go on foot TiO
2In the preparation process of nanometer tube combination electrode, 2. go on foot TiO
2In the preparation process of nanometer tube combination electrode, utilize reometer to monitor its electric current and change, electric current has experienced the process that first rapid decline is slowly risen again, reaches stable state then.At the final stage electric current of stable state abrupt change can take place illustrate that promptly titanium film all is oxidized to TiO
2Nanotube, reaction finishes.
The room temperature preparation method of above-mentioned titania nanotube combined electrode is characterized in that: 2. go on foot TiO
2In the preparation process of nanometer tube combination electrode, described metal fixture making method is as follows: with scissors sheet metal is cut into 10-15mm * 10-15mm earlier, two long 2-5mm slits are opened in each 1-3mm place in the back about the distance center line on arbitrary limit, the intermediary metal is bent downwardly the sample that touch oxidation and plays electric action, and both sides are bent upwards and clamp sample and make its difficult drop-off, after sample clips, encapsulate the outside surface of its contact part to prevent electrolytic solution corroding metal anchor clamps with insulation paste again.
With existing preparation TiO
2The nanotube method is compared, and the present invention can realize waiting acquisition TiO under the room temperature on compliant conductive substrate, conductive glass, simple glass etc.
2Nanotube can obtain flexible flexible electrode and TiO
2The nanotube transparency electrode is expanded its range of application greatly; Next only need at room temperature obtain to have the pure titanium film of high-compactness on substrates of different, and in conjunction with firm, the anode oxidation process difficult drop-off; At last,, can at room temperature prepare nano-tube array, and nanotube is evenly distributed, promptly can in wide temperature range, obtains nano-tube array owing to adopt new electrolyte solution system.
Description of drawings
The table cross section shape appearance figure of titanium film under the different ar pressures of Fig. 1, Fig. 1 (a) (b), is 0.1Pa for the argon gas operating pressure respectively (c), 0.5Pa, 1.5Pa.
The table cross section shape appearance figure and the XRD figure of the different sputtering power titanium of Fig. 2 film, Fig. 2 (a) (b), (c), is 75W for sputtering power respectively (d), 150W, the XRD figure of 167W and different sputtering powers.
1. Fig. 3 metal fixture synoptic diagram wherein is copper cash, 2. is sheet metal, 3. is the current-carrying part of tinsel, 4. is the titanium film sample.
Fig. 4 room temperature condition is the TiO of preparation down
2The nanotube surface shape appearance figure.
Embodiment
Below by specific embodiment, describe the TiO on the substrates of different under the room temperature preparation of highdensity pure titanium film and the room temperature in detail
2The nanotube electrode preparation method.
Embodiment 1
Adopt magnetically controlled sputter method on glass substrate, to prepare and have highdensity pure titanium film.
Earlier glass substrate is soaked successively in acetone, alcohol, difference ultrasonic cleaning 15min puts into sputtering chamber and vacuumizes in the deionized water.When the vacuum tightness of sputtering chamber is lower than 7.0 * 10
-4Pa, feeding purity is 99.999% argon gas, earlier the titanium target is carried out pre-sputter 20min, removes the oxide compound of target material surface.
The first step is under the condition of 105W at sputtering power, (0.1-1.5Pa) titanium deposition film on glass substrate under different argon gas operating pressure.
Second step was under the condition of 0.5Pa in the argon gas operating pressure, at different sputtering power (75-167W) titanium deposition film on glass substrate.
The 3rd step was that 0.5Pa and sputtering power are under the condition of 105W in the argon gas operating pressure, at the titanium film of glass substrate deposition different thickness (0.5-2.5h).
Detected result: as shown in Figure 1, when the argon gas operating pressure increased to 1.5Pa by 0.1Pa, the film cross section was transformed into loose columnar structure from fine and close weave construction, and crystal boundary obviously and increase, surfaceness increases, and the argon gas operating pressure is preferably 0.1-0.5Pa; As can be seen from Figure 2, (002) peak of the close-packed hexagonal structure α phase of titanium has all appearred under different sputtering powers, sputtering power lower (＜105W) time, film tends to generate amorphous and the tiny polycrystalline structure (Fig. 1 (b), Fig. 2 (a)) of crystal grain; When sputtering power was 150W, titanium preferable grain orientation degree was strong, and (010) peak disappears, and (011) peak intensity weakens rapidly, preferential growth on (002) peak of Ti, and the hexagonal crystal surface morphology begins to occur and crystal boundary obvious (Fig. 2 (b)); When increasing to 167W, present obviously independently hexagonal crystal surface morphology, the crystal grain size is about 150nm, and the cross section has hole to occur, and density descends (Fig. 2 (c)), and sputtering power is optimized for 105-150W.At sputtering power is 105W, and sputtering time is respectively 0.5,1.0,1.5,2.0,2.5h, and the thickness of being surveyed is about 0.41,0.84,1.25 respectively, 1.67,2.08 μ m, thickness and sputtering time are linear approximate relationship, and sputter rate is about 0.23nm/s.For preparing titanium film in the substrates such as simple glass, general thickness requires at 400-2000nm; This is because the too thick quality of titanium film is difficult to guarantee, secondly for H
3PO
4/ HF electrolyte system, titanium film thickness are increased to TiO behind the certain thickness
2The length of nanotube increases not obvious, and is difficult to make titanium film all to be converted into TiO
2Nanotube is difficult to obtain transparency electrode.
The preparation of Nano tube array of titanium dioxide combined electrode on the FTO conductive glass.
The first step soaks the conductive glass substrate in acetone earlier successively, alcohol, and difference ultrasonic cleaning 15min puts into sputtering chamber and vacuumizes in the deionized water.When the vacuum tightness of sputtering chamber is lower than 7.0 * 10
-4Pa, feeding purity is 99.999% argon gas, earlier the titanium target is carried out pre-sputter 20min, removes the oxide compound of target material surface, the titanium film of deposition 700-900nm on conductive glass.
Second step, sample after the sputter is nested on the metal fixture as anode, as shown in Figure 3, earlier sheet metal is cut into 10mm * 10mm with scissors, two long 2-5mm slits are opened in each 1-3mm place in the back about the distance center line on arbitrary limit, the intermediary metal is bent downwardly the sample that touch oxidation and plays electric action, and the tight sample of angle coupling makes its difficult drop-off and both sides make progress; Encapsulate its contact part preventing electrolytic solution corroding metal anchor clamps with insulation paste then, after washed with de-ionized water dries up, whole sample is immersed in fully in the electrolytic solution that (20 ℃) carry out anodic oxidation under the room temperature.Wherein platinized platinum is as negative electrode, and two interpolar distance is 30cm, and electrolytic solution is that the material mass ratio is H in the electrolytic solution
3PO
4: HF: H
2O=10: 1: 100, constant voltage was 20V, and anodic oxidation 50min sampling is with drying up after the washed with de-ionized water.
Detected result: Fig. 4 is that anodic oxidation voltage is 20V under the room temperature, the surface topography map of the nano-tube array that oxidization time forms during for 50min.During oxidation 50min, the obvious and regular arrangement of the structure of nanotube, simultaneous oxidation film surface is comparatively clean, and bore is about 90nm, and tube wall is about 15nm, thereby has obtained TiO on conductive glass
2Nano-tube array.
Under the constant condition of other conditions, oxidation voltage changes at 10-20V, and the external diameter of nanotube changes at 30-105nm, and the length of nanotube also has corresponding variation; Other condition is constant, and the HF mass ratio in the electrolytic solution changes at 0.5-1, all can the growing nano-tube array, but the speed difference of reaction, caliber is constant substantially, and pipe range changes comparatively obvious; Other condition is constant, and anodizing time changes at 30-60min, and the length of nanotube changes between 250-400nm, and the caliber parameter is constant substantially, and the coverture of nanotube surface reduces gradually.
Change the substrate of conductive glass into the compliant conductive substrate material, simple glass, conductive glass, silicon chip, aluminium flake, iron plate and stainless steel all can obtain nano-tube array, and its anodised process is all similar.The conducting film of compliant conductive substrate is indium tin oxides film (indium-tin oxide, ITO), substrate is polyethylene terephthalate (PET) or PEN, because of its resistance to elevated temperatures relatively poor, need to adopt the low temperature deposit, but the thickness of titanium film is unsuitable blocked up, otherwise its flexibility obtains restriction; For simple glass, conductive glass and silicon chip, in electrolytic solution, be difficult for being corroded and the back side non-conductive, directly oxidation can obtain on metal fixture; For aluminium flake, iron plate and stainless steel, its back side is conducted electricity and easily is corroded in electrolytic solution, so need protect not part of aerobicization of its back side and other with insulation paste.
Claims (5)
1, a kind of room temperature preparation method of titania nanotube combined electrode is characterized in that may further comprise the steps:
1. the room temperature preparation of the pure titanium film of high-density on the substrate:
Elder generation's ultrasonic cleaning substrate, after sputter vacuum tightness reaches requirement, at sputtering power 105-150W, ar pressure 0.1-0.5Pa, substrate does not heat, and sputtering time is the parameter deposit titanium film of 0.5-2h;
2. TiO
2The room temperature preparation of nanometer tube combination electrode:
Sample after the sputter is nested on the metal fixture as anode, after whole sample be immersed in fully carry out anodic oxidation in the electrolytic solution under the room temperature; Wherein platinized platinum is as negative electrode, and two interpolar distance is 10-50cm, and material mass is than being H in the electrolytic solution
3PO
4: HF: H
2O=10: 0.5-1: 100, constant voltage is 10-20V, the reaction times is 30-60min.
2, the room temperature preparation method of titania nanotube combined electrode according to claim 1 is characterized in that: 2. go on foot TiO
2In the preparation process of nanometer tube combination electrode, utilize reometer to monitor its electric current and change, electric current has experienced the process that first rapid decline is slowly risen again, reaches stable state then, at the final stage electric current of stable state abrupt change can take place and illustrate that promptly titanium film all is oxidized to TiO
2Nanotube, reaction finishes.
3, the room temperature preparation method of titania nanotube combined electrode according to claim 1 is characterized in that: 2. go on foot TiO
2In the preparation process of nanometer tube combination electrode, described metal fixture making method is as follows: with scissors sheet metal is cut into 10-15mm * 10-15mm earlier, two long 2-5mm slits are opened in each 1-3mm place in the back about the distance center line on arbitrary limit, the intermediary metal is bent downwardly the sample that touch oxidation and plays electric action, and both sides are bent upwards and clamp sample and make its difficult drop-off, after sample clips, encapsulate the outside surface of its contact part to prevent electrolytic solution corroding metal anchor clamps with insulation paste again.
4, the room temperature preparation method of titania nanotube combined electrode according to claim 1 is characterized in that: described substrate is the polyethylene terephthalate or the PEN flexible substrates of conduction, and conducting film is an indium tin oxides film.
5, the room temperature preparation method of titania nanotube combined electrode according to claim 1 is characterized in that: described substrate is a simple glass, conductive glass, silicon chip, aluminium flake, any one in iron plate and the stainless steel.
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| CN101447341B (en) * | 2008-12-30 | 2011-02-09 | 南京航空航天大学 | Flexible dye-sensitized solar battery with stainless steel as substrate and preparation method thereof |
| CN102110723B (en) * | 2010-11-08 | 2012-10-03 | 浙江大学 | Anti-charged dust device used on surface of optical system or solar cell |
| CN102122580B (en) * | 2010-12-21 | 2012-05-30 | 北京化工大学 | Method for preparing modified titanium dioxide nanotube dye-sensitized photoanode thin film |
| CN102768227B (en) * | 2012-06-11 | 2015-04-22 | 江苏大学 | Production method of dye-sensitized TiO2 film based gas sensor |
| CN102899701B (en) * | 2012-09-13 | 2016-01-13 | 上海交通大学 | Al 2o 3tiO in ceramic bases 2the preparation of Nanotube Array |
| CN102864481B (en) * | 2012-09-18 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Titanium dioxide photo-catalyzed film and preparation method thereof |
| CN103253743A (en) * | 2013-04-28 | 2013-08-21 | 南京大学 | Preparation method and application of Fe-doped PTFE-PbO2/TiO2-NTs/Ti electrode |
| CN103388122B (en) * | 2013-07-09 | 2015-05-06 | 太原理工大学 | Preparation method of TiO2 depositing layer on stainless steel surface |
| CN107068408A (en) * | 2017-04-18 | 2017-08-18 | 河西学院 | It is a kind of for light anode of DSSC and preparation method thereof |
| CN107402242B (en) * | 2017-08-01 | 2020-05-05 | 南京航空航天大学 | Surface-modified titanium dioxide film gas sensor and preparation method thereof |
| CN109319832B (en) * | 2018-08-30 | 2021-04-30 | 中国石油天然气股份有限公司 | Linear porous titanium dioxide material and preparation method and application thereof |
| CN110118806A (en) * | 2019-05-29 | 2019-08-13 | 兰州大学 | Ceramic Tube Type gas sensor and preparation method thereof |
| CN113174577B (en) * | 2021-04-23 | 2023-02-07 | 浙江科技学院 | Porous TiO 2 In-situ growth preparation method of nano-cellulose network composite membrane |
| CN116130608B (en) * | 2023-04-04 | 2023-06-30 | 山东科技大学 | Method for preparing titanium oxide film flexible electrode by self-assembly technology |
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