CN100552823C - The word line voltage commutation circuit that is used for low pressure EEPROM - Google Patents
The word line voltage commutation circuit that is used for low pressure EEPROM Download PDFInfo
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- CN100552823C CN100552823C CNB2006100301184A CN200610030118A CN100552823C CN 100552823 C CN100552823 C CN 100552823C CN B2006100301184 A CNB2006100301184 A CN B2006100301184A CN 200610030118 A CN200610030118 A CN 200610030118A CN 100552823 C CN100552823 C CN 100552823C
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Abstract
The invention discloses a kind of word line voltage commutation circuit that is used for low pressure EEPROM, form by low pressure to level shifting circuit, high voltage intrinsic NMOS transistor and the high voltage feedback pull-up circuit of middle pressure; This circuit adopts general level shifting circuit to realize the switching of low pressure to middle pressure, reaches the word line output terminal by the high voltage intrinsic NMOS transistor again, realizes that low pressure was to the switching of middle pressure when EEPROM read; During programming, realized the switching of low pressure again to high pressure by high voltage feedback pull-up circuit.Circuit structure of the present invention is simple, helps saving chip area, and production cost is low.
Description
Technical field
The present invention relates to the word line voltage commutation circuit in a kind of integrated circuit, relate in particular to a kind of word line voltage commutation circuit that is used for low pressure EEPROM (Electrically Erasable Programmable Read-Only Memory, electrically-erasable ROM (read-only memory)).
Background technology
In low pressure EEPROM design, in order to improve reading speed, when reading of data, need raise the voltage on the word line, this voltage can be realized by charge pump, is referred to as middle pressure; When wiping or write data, then need the voltage on the word line to be raised to tens volts, be referred to as high pressure.In order to be implemented in the switching of the medium and high pressure on the word line under the different operating, just need by complicated commutation circuit, this has just increased chip area, can improve production cost.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of word line voltage commutation circuit that is used for low pressure EEPROM, and it is simple in structure, helps saving chip area, and production cost is low.
For solving the problems of the technologies described above, the invention provides a kind of word line voltage commutation circuit that is used for low pressure EEPROM, comprise the level shifting circuit of low pressure to middle pressure, also comprise high voltage intrinsic NMOS transistor and high voltage feedback pull-up circuit;
Described low pressure to the level shifting circuit of middle pressure comprises pressing in two among PMOS transistor MP1, MP2 and two presses nmos pass transistor MN1, MN2 and a low pressure phase inverter LINV; Press PMOS transistor MP1 in two, the source electrode of MP2 connects middle voltage source, the drain electrode of middle pressure PMOS transistor MP1 links to each other with the drain electrode of middle pressure nmos pass transistor MN1 and the grid of middle pressure PMOS transistor MP2, the drain electrode of middle pressure PMOS transistor MP2 links to each other with the drain electrode of middle pressure nmos pass transistor MN2 and the grid of middle pressure PMOS transistor MP1, press nmos pass transistor MN1 in two, the source ground of MN2, the grid of middle pressure nmos pass transistor MN1 connects the output of low pressure phase inverter LINV, the grid of middle pressure nmos pass transistor MN2 connects the input of low pressure phase inverter LINV, and the power supply of low pressure phase inverter LINV connects low-tension supply;
Described high voltage feedback pull-up circuit is depressed into the level shifting circuit of high pressure promptly, comprise a high pressure phase inverter and a high voltage PMOS transistor, the input end of high pressure phase inverter is a word line, the grid of its output terminal and high voltage PMOS transistor links to each other, the source electrode of this high voltage PMOS transistor connects high-voltage power supply, and its drain electrode links to each other with word line; Described high voltage intrinsic NMOS transistor drain also links to each other with word line, and its source electrode links to each other with the output terminal of described low pressure to the level shifting circuit of middle pressure, and its grid connects middle voltage source;
Described low pressure to the level shifting circuit of middle pressure is realized the switching of low pressure to middle pressure, reaches the word line output terminal by the high voltage intrinsic NMOS transistor again, switches to middle pressure by low pressure when EEPROM is read; During the EEPROM programming, middle pressure output signal by the high pressure phase inverter in the high voltage feedback pull-up circuit and the positive feedback of high voltage PMOS transistor, is pulled to high voltage level again, switches to high pressure by low pressure when making the EEPROM programming.
The high pressure phase inverter of described high voltage feedback pull-up circuit is made up of 1 high voltage PMOS transistor and 1 high pressure NMOS transistor, the source electrode of this high voltage PMOS transistor connects high-voltage power supply, its drain electrode and the interconnection of high pressure NMOS transistor drain, the transistorized gate interconnection of its grid and high pressure NMOS, the transistorized source ground of high pressure NMOS.
Compare with prior art, the present invention has following beneficial effect: the present invention adopts general level shifting circuit to realize the switching of low pressure to middle pressure, reach the word line output terminal by the high voltage intrinsic NMOS transistor again, low pressure was to the switching of high pressure when low pressure was to the switching of middle pressure and EEPROM programming when realizing that by high voltage feedback pull-up circuit EEPROM reads then.The word line voltage commutation circuit that is used for low pressure EEPROM of the present invention has been used in the EEPROM Development of Module, and it is simple in structure, saved chip area effectively, and production cost is low.
Description of drawings
Accompanying drawing is the word line voltage commutation circuit structural representation that the present invention is used for low pressure EEPROM.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
As shown in drawings, entire circuit of the present invention is divided into 3 ingredients:
1, low pressure is to the level shifting circuit of middle pressure, comprises pressing among 2 of left side in the accompanying drawing among PMOS transistor MP1, MP2 and 2 pressing nmos pass transistor MN1, MN2 and a low pressure phase inverter LINV; Press PMOS transistor MP1 in two, the source electrode of MP2 connects middle voltage source, the drain electrode of middle pressure PMOS transistor MP1 links to each other with the drain electrode of middle pressure nmos pass transistor MN1 and the grid of middle pressure PMOS transistor MP2, the drain electrode of middle pressure PMOS transistor MP2 links to each other with the drain electrode of middle pressure nmos pass transistor MN2 and the grid of middle pressure PMOS transistor MP1, press nmos pass transistor MN1 in two, the source ground of MN2, the grid of middle pressure nmos pass transistor MN1 connects the output of low pressure phase inverter LINV, the grid of middle pressure nmos pass transistor MN2 connects the input (being the word line input of whole commutation circuit) of low pressure phase inverter LINV, and the power supply of low pressure phase inverter LINV connects low-tension supply;
2, high voltage intrinsic NMOS transistor NN plays transmitting effect;
3, high voltage feedback pull-up circuit is depressed into the level shifting circuit of high pressure in promptly, comprises the high voltage PMOS transistor HP1 and a high pressure phase inverter on right side in the accompanying drawing, and this high pressure phase inverter is made of high voltage PMOS transistor HP2 and high pressure NMOS transistor HN1.The source electrode of high voltage PMOS transistor HP2 meets high-voltage power supply VDD3, the drain electrode interconnection of its drain electrode and high pressure NMOS transistor HN1, the gate interconnection of its grid and high pressure NMOS transistor HN1, the source ground of high pressure NMOS transistor HN1.The source electrode of high voltage PMOS transistor HP1 meets high-voltage power supply VDD3, and grid connects the output terminal of high pressure phase inverter, and drain electrode connects the drain electrode (being word line, also is the input end of high pressure phase inverter) of high voltage intrinsic NMOS transistor NN; The source electrode of high voltage intrinsic NMOS transistor NN and described low pressure to the output terminal of the level shifting circuit of middle pressure links to each other and (promptly links to each other with RA, RA is a bit between middle pressure PMOS transistor MP1 and middle pressure nmos pass transistor MN1 in the circuit), the grid of high voltage intrinsic NMOS transistor NN meets middle voltage source VDD2.
Foregoing circuit adopts general level shifting circuit to realize the switching of low pressure to middle pressure, reaches word line output terminal WL by high voltage intrinsic NMOS transistor NN again, realizes that low pressure was to the switching of middle pressure when EEPROM read; Insert high voltage PMOS transistor HP1 at word line output terminal WL and high-voltage power supply end VDD3, its gate is made as the inversion signal WB of word line output, middle positive feedback of pressing output signal by high pressure phase inverter (constituting) and high voltage PMOS transistor HP1 by high voltage PMOS transistor HP2 and high pressure NMOS transistor HN1, can be pulled to high voltage level, low pressure is to the switching of high pressure during with realization EEPROM programming.
The principle of work of this circuit is as follows:
Suppose that low-tension supply VDD1 is 1.8V (being the power supply of low pressure phase inverter); Middle voltage source VDD2 is 3V; High-voltage power supply VDD3 is 15V; Threshold voltage=0.1V of intrinsic N transistor npn npn NN.
1) when EEPROM programmes, requiring word line is high voltage level.At this moment, VDD2=VDD1=1.8V, VDD3=15V.
If input signal IN is 1.8V, then RA=IN=1.8V passes through transmission gate, and WL (word line output terminal) level is 1.7V; WB (inversion signal of word line output)=0V, the high-voltage P-type transistor HP1 conducting in the accompanying drawing, WL is pulled to 15V.
If input signal IN is 0V, then RA=IN=0V passes through transmission gate, and the WL level is 0V; WB=15V, the high-voltage P-type transistor HP1 in the accompanying drawing by, WL remains 0V.
2) when EEPROM reads, requiring word line is middle voltage level.At this moment, VDD1=1.8V, VDD2=3V, VDD3 open circuit.
If input signal IN is 1.8V, then RA=3V passes through transmission gate, and the WL level is 2.9V, and this word line is selected; Its WB=0V, the high-voltage P-type transistor HP1 conducting in the accompanying drawing, VDD3 is placed in 2.9V.
If input signal IN is 0V, then RA=0V passes through transmission gate, and the WL level is 0V; When having one in all word lines when selected, the front mentions that VDD3 will be placed in 2.9V, and not selected word line WL is 0V, its WB=2.9V, the high-voltage P-type transistor HP1 in the accompanying drawing by; If all word lines are all not selected, VDD3 will be in open-circuit condition, but because there be the forward PN junction of 1 drain terminal to the source end in the HP1 pipe, in fact the voltage of VDD3 is 2.9V-PN knot forward voltage drop, and all word lines then are 0V.
Claims (2)
1, a kind of word line voltage commutation circuit that is used for low pressure EEPROM comprises the level shifting circuit of low pressure to middle pressure, it is characterized in that, also comprises high voltage intrinsic NMOS transistor and high voltage feedback pull-up circuit;
Described low pressure to the level shifting circuit of middle pressure comprises pressing in two among PMOS transistor MP1, MP2 and two presses nmos pass transistor MN1, MN2 and a low pressure phase inverter LINV; Press PMOS transistor MP1 in two, the source electrode of MP2 connects middle voltage source, the drain electrode of middle pressure PMOS transistor MP1 links to each other with the drain electrode of middle pressure nmos pass transistor MN1 and the grid of middle pressure PMOS transistor MP2, the drain electrode of middle pressure PMOS transistor MP2 links to each other with the drain electrode of middle pressure nmos pass transistor MN2 and the grid of middle pressure PMOS transistor MP1, press nmos pass transistor MN1 in two, the source ground of MN2, the grid of middle pressure nmos pass transistor MN1 connects the output of low pressure phase inverter LINV, the grid of middle pressure nmos pass transistor MN2 connects the input of low pressure phase inverter LINV, and the power supply of low pressure phase inverter LINV connects low-tension supply;
Described high voltage feedback pull-up circuit is depressed into the level shifting circuit of high pressure promptly, comprise a high pressure phase inverter and a high voltage PMOS transistor, the input end of high pressure phase inverter is a word line, the grid of its output terminal and high voltage PMOS transistor links to each other, the source electrode of this high voltage PMOS transistor connects high-voltage power supply, and its drain electrode links to each other with word line; Described high voltage intrinsic NMOS transistor drain also links to each other with word line, and its source electrode links to each other with the output terminal of described low pressure to the level shifting circuit of middle pressure, and its grid connects middle voltage source;
Described low pressure to the level shifting circuit of middle pressure is realized the switching of low pressure to middle pressure, reaches the word line output terminal by the high voltage intrinsic NMOS transistor again, switches to middle pressure by low pressure when EEPROM is read; During the EEPROM programming, middle pressure output signal by the high pressure phase inverter in the high voltage feedback pull-up circuit and the positive feedback of high voltage PMOS transistor, is pulled to high voltage level again, switches to high pressure by low pressure when making the EEPROM programming.
2, the word line voltage commutation circuit that is used for low pressure EEPROM as claimed in claim 1, it is characterized in that, the high pressure phase inverter of described high voltage feedback pull-up circuit is made up of 1 high voltage PMOS transistor and 1 high pressure NMOS transistor, the source electrode of this high voltage PMOS transistor connects high-voltage power supply, its drain electrode and the interconnection of high pressure NMOS transistor drain, the transistorized gate interconnection of its grid and high pressure NMOS, the transistorized source ground of high pressure NMOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100301184A CN100552823C (en) | 2006-08-16 | 2006-08-16 | The word line voltage commutation circuit that is used for low pressure EEPROM |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100301184A CN100552823C (en) | 2006-08-16 | 2006-08-16 | The word line voltage commutation circuit that is used for low pressure EEPROM |
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| CN101127241A CN101127241A (en) | 2008-02-20 |
| CN100552823C true CN100552823C (en) | 2009-10-21 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101751061B (en) * | 2008-12-17 | 2012-04-18 | 上海华虹Nec电子有限公司 | High voltage stabilizer and high voltage intrinsic NMOS tube |
| US8638618B2 (en) * | 2010-12-23 | 2014-01-28 | Macronix International Co., Ltd. | Decoder for NAND memory |
| CN108573724A (en) * | 2017-03-13 | 2018-09-25 | 旺宏电子股份有限公司 | The operating method of memory device, word-line decoder and memory device |
| CN108694969B (en) * | 2017-04-05 | 2021-02-26 | 中芯国际集成电路制造(北京)有限公司 | Word line boosting circuit and memory including the same |
| CN112929020B (en) * | 2021-01-22 | 2023-09-26 | 珠海零边界集成电路有限公司 | Electronic device and level conversion circuit thereof |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
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Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |