CN100549819C - Metal mask plate - Google Patents
Metal mask plate Download PDFInfo
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- CN100549819C CN100549819C CNB031235735A CN03123573A CN100549819C CN 100549819 C CN100549819 C CN 100549819C CN B031235735 A CNB031235735 A CN B031235735A CN 03123573 A CN03123573 A CN 03123573A CN 100549819 C CN100549819 C CN 100549819C
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- metal mask
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- mask plate
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- chrome
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Abstract
The present invention is a metal mask plate, it adds the identical chromium of upper surface or lower surface or upper and lower surface figure and gold or copper or silver or aluminum metal thin layer figure by substrate and constitutes, have Micropicture structural metal mask plate by rayed and produce the very short plasma wave of wavelength, pass nano graph hole and seam propagation property, make general wavelength or long wavelength light pass the nano metal mask and carry out photoetching.Overcome the nano graph manufacturing technology complexity of existing chrome mask version, again owing to be subjected to the restriction of diffraction limit, can not have been passed simultaneously, can't carry out the shortcoming of photoetching by general wavelength or long wavelength light.With 193-1000nm wavelength laser illumination, but also photoetching making goes out the figure of nanometer scale.
Description
Technical field
The present invention relates to metal mask plate and application thereof that a kind of photolithographic exposure system makes superfine graph, belong to the mask technique field that Micrometer-Nanometer Processing Technology is made superfine graph.
Background technology
Along with global communication technology and high-tech rapid development of information technology, press for Micrometer-Nanometer Processing Technology and make hypervelocity, super high frequency nanometer magnitude IC device.Make nanometer IC device and need increase substantially the resolution that has photoetching technique now.Because the restriction of diffraction limit, usually for the mask graph hole dimension during much smaller than the nano graph of wavelength, light can not pass this hole, also just can not carry out the nano graph photoetching.So generally all adopt the method that shortens the wavelength light etching making to improve resolution, main method has deep ultraviolet, extreme ultraviolet, X ray, ion beam projection, electron beam and atom lithography or the like.But these methods all need utmost point short wavelength light source electromagnetic radiation system and optical system, not only very complicated technically, and investment is also all very expensive, simultaneously in the making of mask figure, because figure has reached nanometer scale, make quite trouble and complicated, need the approach effect correction technique, and resolution enhance technology such as phase shifting mask technology or dual masks photoetching technique or the like, the complexity of its manufacturing technology and the height of cost, remove countries and regions economically developed and that technical foundation is good, and beyond strong major company carried out or researching and developing, other country and unit seemed that all some is too far behind to catch up.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome above-mentioned the deficiencies in the prior art, providing a kind of neither needs with utmost point short wavelength light source complex and expensive lithographic equipment, need when making the mask figure, must not use technology such as approach effect correction and phase shifting mask yet, and manufacturing technology is simple relatively, and photoetching resolution but can reach the metal mask plate and the application thereof of nanometer scale equally.
Purpose of the present invention can realize by following technical measures: metal mask plate is made up of sio2 film or substrate, chrome mask figure thin layer and metal mask figure thin layer, make the metal mask plate of superfine graph, be manufactured with chrome mask figure thin layer, this figure thin layer is to be produced on the sio2 film substrate of thickness greater than 1 μ m, on chrome mask figure thin layer, also make to have the identical metal mask thin layer of figure, the metal material of metal mask thin layer is gold, silver or copper or aluminium, its thickness is 5-150nm, and the thickness of chrome mask figure thin layer is 5-150nm.
Purpose of the present invention also can realize by following technical measures: greater than work below the sio2 substrate of 1 μ m or the film metal mask figure thin layer is arranged at thickness, metal material is gold, silver or copper or aluminium, its thickness is 5-150nm, it below the metal mask figure thin layer chrome mask graphic films layer, its thickness is 5-150nm, and metal mask figure thin layer is identical with chrome mask thin layer figure.
Purpose of the present invention also can realize by following technical measures: in the top and bottom of quartz base plate or film all is chrome mask figure thin layer, on chrome mask figure thin layer or chrome mask figure thin layer below all be metal mask figure thin layer, wherein the thickness of quartz base plate or film is the integral multiple of λ/2, λ is an optical wavelength, the thickness of chrome mask figure thin layer is 5-150nm, the metal material of metal mask figure thin layer is gold, silver or copper or aluminium, its thickness is 5-150nm, chrome mask figure thin layer is identical with metal mask figure thin layer figure up and down, and alignment.
The metal mask plate that the present invention is above-mentioned three types, be applied to projection imaging photolithographic exposure system, it is characterized in that: this system comprises by general wavelength or long wavelength laser light source, catoptron and illumination beam-expanding system are formed uniform illumination system, above-mentioned metal mask plate, projection imaging object lens and the silicon chip composition that scribbles resist coating, the wavelength that is sent by general wavelength or long wavelength laser light source is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate by illuminator, by the projection imaging object lens ultra tiny mask graph is imaged on the resist coating on the silicon chip again, make resist sensitization.
The metal mask plate that the present invention is above-mentioned three types, be applied to contact in the proximity photolithographic exposure system, it comprises by general wavelength or long wavelength laser light source, catoptron and illumination beam-expanding system are formed uniform illumination system, above-mentioned metal mask plate and lay thereunder high-resolution photoresist coating, distance between metal mask plate and the high-resolution photoresist coating is 0.005-1000 μ m, sending wavelength by general wavelength or long wavelength laser light source is that any wavelength laser of 193-1000nm throws light on the superfine graph face of metal mask plate by uniform illumination system, light penetrates from the lower surface of metal mask plate, make evenly to be applied on the silicon chip and the approaching high-resolution photoresist coating sensitization that is placed in the metal mask plate below of contact, make the superfine graph of nanometer scale by lithography.
The present invention compared with prior art has the following advantages:
1. when using this metal mask plate, make original because the diffraction limit restriction, become and to pass with general wavelength or long wavelength light impenetrable nanometer mask graph hole and seam, do not need to shorten wavelength, very expensive utmost point short wavelength light source electromagnetic radiation system and complicated optical system be can save, manufacturing technology difficulty and lithographic equipment cost greatly reduced;
2. when using this metal mask plate, the making of mask need not be adopted the manufacturing technology of the chrome mask plate that conventional lithography uses, as strengthening with resolution such as phase shifts and complex technology such as proximity effect correction, manufacturing technology is simple relatively, can reduce the cost of manufacture of mask;
3. when using this metal mask plate, the resolution limit of litho pattern is not limited by lambda1-wavelength by the decision of the size of mask graph, so photoetching resolution can do very highly, reaches nanometer scale.
Description of drawings
Fig. 1 is the structural drawing of the embodiment of the invention 1;
Fig. 2 is the structural drawing of the embodiment of the invention 2;
Fig. 3 is the structural drawing of the embodiment of the invention 3;
Fig. 4 is applied to light channel structure synoptic diagram in the projection imaging photolithographic exposure system for the present invention;
Fig. 5 is applied to contact light channel structure synoptic diagram in the proximity imaging and photo-etching exposure system for the present invention.
Embodiment
As shown in Figure 1, the embodiment of the invention 1 is made up of with chrome mask figure thin layer 2 identical metal mask figure thin layers 1 with the figure that is positioned at the top chrome mask figure thin layer 2, the sio2 film that is positioned at the below or substrate 3, wherein the thickness of sio2 film or substrate 3 is at least more than the 1 μ m, the thickness of chrome mask figure thin layer 2 is 5-150nm, the metal material of metal mask figure thin layer 1 is gold, silver or copper or aluminium, and its thickness is 5-150nm.General wavelength or long wavelength laser can pass through the much smaller nano metal mask of figure scale ratio wavelength, be because the metal mask that has a superfine graph under the irradiation of general wavelength or long wavelength laser, produced the very short surface plasma-wave of wavelength, plasma wave can pass the hole of nanometer chrome mask figure thin layer 2 figures and propagate ejaculation with seam, just looks like to be that general wavelength or long wavelength laser directly pass the ejaculation of nano metal mask graph equally.
As shown in Figure 2, the embodiment of the invention 2 by be positioned at the top sio2 substrate or film 3, be positioned at the below chrome mask figure thin layer 2 form with chrome mask figure thin layer 2 identical metal mask figure thin layers 1, wherein the thickness of sio2 substrate or film 3 is greater than 1 μ m, the thickness of chrome mask figure thin layer 2 is 5-150nm, the metal material of metal mask figure thin layer 1 is gold, silver or copper or aluminium, and its thickness is 5-150nm.With embodiment 1 in like manner, general wavelength or long wavelength laser can pass through the much smaller nano metal mask of figure scale ratio wavelength, be because the metal mask that has a superfine graph under the irradiation of general wavelength or long wavelength laser, produced the very short surface plasma-wave of wavelength, plasma wave can pass the hole of nanometer chrome mask figure thin layer 2 and propagate ejaculation with seam, just looks like to be that general wavelength or long wavelength laser directly pass the ejaculation of nano metal mask graph equally.
As shown in Figure 3, the structural representation of the embodiment of the invention 3, it is by quartz base plate or film 4, chrome mask figure thin layer 2 and following chrome mask figure thin layer 2 ', and be positioned at the top or the metal mask figure thin layer 1 and the play metal mask figure thin layer 1 ' composition of below, wherein the thickness of quartz base plate or film 3 is the integral multiple (λ is an optical wavelength) of λ/2, the thickness of chrome mask figure thin layer 2 and following chrome mask figure thin layer 2 ' is 5-150nm, the metal material of metal mask figure thin layer 1 and following metal mask figure thin layer 1 ' is a gold, silver or copper or aluminium, its thickness is 5-150nm, and chrome mask figure thin layer 2 and following chrome mask figure thin layer 2 ' and metal mask figure thin layer 1 are identical with following metal mask figure thin layer 1 ' figure and align.With embodiment 2 in like manner, general wavelength or long wavelength laser can pass through the much smaller nano metal mask graph of figure scale ratio wavelength, also be because the metal mask figure thin layer 1 that has a superfine graph under the irradiation of general wavelength or long wavelength laser, produced the very short surface plasma-wave of wavelength, hole and seam that plasma wave can pass mask upper surface nanometer chrome mask figure thin layer 2 propagate in quartz base plate or the film 4, because the distance between the mask upper and lower surface is the integral multiple structure of λ/2, can make plasma wave between upper and lower surface, produce resonance, penetrating with small divergence angle from the hole of following chrome mask figure thin layer 2 ' and seam, just looks like to be that general wavelength or long wavelength laser directly pass the nano metal mask graph and penetrate the same.
As shown in Figure 4, the metal mask plate of above-mentioned three kinds of embodiment is applied to projection imaging photolithographic exposure system, it forms uniform illumination system by general wavelength or long wavelength laser light source 7, catoptron 5 and illumination beam-expanding system 6, metal mask 8, projection imaging object lens 9 and silicon chip 11 compositions that scribble resist coating 10.The wavelength that is sent by general wavelength or long wavelength laser light source 7 is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate 8 by illuminator, propagate by producing the very short surface plasma-wave of wavelength, passing the hole and the seam ejaculation of the chromium thin layer figure on the mask or the back of passing through to resonate penetrates, by projection imaging object lens 9 ultra tiny mask graph is imaged on the resist coating 10 on the silicon chip 11 again, make resist sensitization, make the superfine graph of nanometer scale by lithography.
As shown in Figure 5, metal mask plate of the present invention is applied to contact proximity photolithographic exposure system, it is by general wavelength or long wavelength laser light source 7, catoptron 5 and illumination beam-expanding system 6 are formed uniform illumination system, above-mentioned metal mask plate 8 and the silicon chip of laying thereunder that scribbles resist coating 10 11 are formed, metal mask plate 8 and the distance that scribbles between the silicon chip 11 of resist coating 10 are 0.005-1000 μ m, the wavelength that is sent by general wavelength or long wavelength laser light source 7 is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate 8 by illuminator, light penetrates from the lower surface of metal mask plate 8, make evenly also approaching resist coating 10 sensitization that are placed in metal mask plate 8 belows of contact on silicon chip 11, make the superfine graph of nanometer scale by lithography.
Claims (9)
1, metal mask plate, it is characterized in that: described metal mask plate (8) is made up of sio2 film or substrate (3), chrome mask figure thin layer (2) and metal mask figure thin layer (1), chrome mask figure thin layer (2) is to be produced on the sio2 film or substrate (3) of thickness greater than 1 μ m, on chrome mask figure thin layer (2), also make to have the identical metal mask figure thin layer (1) of figure, the metal material of metal mask figure thin layer (1) is gold or silver or copper or aluminium, its thickness is 5-150nm, and the thickness of chrome mask figure thin layer (2) is 5-150nm.
2, a kind of projection imaging photolithographic exposure system that adopts the described metal mask plate of claim 1, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, metal mask plate (8), projection imaging object lens (9) and silicon chip (11) composition that scribbles resist coating (10), the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, by projection imaging object lens (9) ultra tiny mask graph is imaged on the resist coating (10) on the silicon chip (11) again, make resist sensitization, make the superfine graph of nanometer scale by lithography.
3, a kind of contact proximity photolithographic exposure system that adopts the described metal mask plate of claim 1, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, above-mentioned metal mask plate (8) and the silicon chip of laying thereunder that scribbles resist coating (10) (11) are formed, metal mask plate and the distance that scribbles between the silicon chip (11) of resist coating (10) are 0.005-1000 μ m, the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, light penetrates from the lower surface of metal mask plate (8), make evenly to be applied to last and approaching resist coating (10) sensitization that is placed in metal mask plate (8) below of contact of silicon chip (11), make the superfine graph of nanometer scale by lithography.
4, metal mask plate, it is characterized in that: described metal mask plate (8) is by sio2 film or substrate (3), chrome mask figure thin layer (2) and metal mask figure thin layer (1) are formed, greater than work below the sio2 substrate of 1 μ m or the film (3) metal mask figure thin layer (1) is arranged at thickness, the metal material of metal mask figure thin layer (1) is gold or silver or copper or aluminium, its thickness is 5-150nm, it below the metal mask figure thin layer (1) chrome mask figure thin layer (2), its thickness is 5-150nm, and metal mask figure thin layer (1) is identical with the figure of chrome mask figure thin layer (2).
5, a kind of projection imaging photolithographic exposure system that adopts the described metal mask plate of claim 4, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, metal mask plate (8), projection imaging object lens (9) and silicon chip (11) composition that scribbles resist coating (10), the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, by projection imaging object lens (9) ultra tiny mask graph is imaged on the resist coating (10) on the silicon chip (11) again, make resist sensitization, make the superfine graph of nanometer scale by lithography.
6, a kind of contact proximity photolithographic exposure system that adopts the described metal mask plate of claim 4, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, above-mentioned metal mask plate (8) and the silicon chip of laying thereunder that scribbles resist coating (10) (11) are formed, metal mask plate (8) and the distance that scribbles between the silicon chip (11) of resist coating (10) are 0.005-1000 μ m, the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, light penetrates from the lower surface of metal mask plate (8), make evenly and go up and approaching resist coating (10) sensitization that is placed in metal mask plate (8) below of contact, make the superfine graph of nanometer scale by lithography in silicon chip (11).
7, metal mask plate, its feature also is: described metal mask plate (8) is by sio2 film or substrate (4), chrome mask figure thin layer (2), following chrome mask figure thin layer (2 '), metal mask figure thin layer (1) and following metal mask figure thin layer (1 ') are formed, on the quartz base plate of metal mask plate (8) or film (4), be respectively chrome mask figure thin layer (2) and following chrome mask figure thin layer (2 ') below, on chrome mask figure thin layer (2) or down chrome mask figure thin layer (2 ') below all be respectively metal mask figure thin layer (1) and following metal mask figure thin layer (1 '), the metal material of metal mask figure thin layer (1) and following metal mask figure thin layer (1 ') is gold or silver or copper or aluminium, its thickness is 5-150nm, the thickness of quartz base plate or metal mask figure thin layer (1) is the integral multiple of λ/2, λ is an optical wavelength, the thickness of chrome mask figure thin layer (2) and following chrome mask figure thin layer (2 ') is 5-150nm, chrome mask figure thin layer (2) is identical with the figure of metal mask figure thin layer (1) and following metal mask figure thin layer (1 ') with following chrome mask figure thin layer (2 ') up and down, and alignment.
8, a kind of projection imaging photolithographic exposure system that adopts the described metal mask plate of claim 7, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, metal mask plate (8), projection imaging object lens (9) and silicon chip (11) composition that scribbles resist coating (10), the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, by projection imaging object lens (9) ultra tiny mask graph is imaged on the resist coating (10) on the silicon chip (11) again, make resist sensitization, make the superfine graph of nanometer scale by lithography.
9, a kind of contact proximity photolithographic exposure system that adopts the described metal mask plate of claim 7, it is characterized in that: it comprises by general wavelength or long wavelength laser light source (7), catoptron (5) and illumination beam-expanding system (6) are formed uniform illumination system, above-mentioned metal mask plate (8) and the silicon chip of laying thereunder that scribbles resist coating (10) (11) are formed, metal mask plate (8) and the distance that scribbles between the silicon chip (11) of resist coating (10) are 0.005-1000 μ m, the wavelength that is sent by general wavelength or long wavelength laser light source (7) is that the light of 193-1000nm evenly throws light on the superfine graph face of metal mask plate (8) by illuminator, light penetrates from the lower surface of metal mask plate (8), make evenly and go up and approaching resist coating (10) sensitization that is placed in metal mask plate (8) below of contact, make the superfine graph of nanometer scale by lithography in silicon chip (11).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031235735A CN100549819C (en) | 2003-05-29 | 2003-05-29 | Metal mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031235735A CN100549819C (en) | 2003-05-29 | 2003-05-29 | Metal mask plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1553283A CN1553283A (en) | 2004-12-08 |
| CN100549819C true CN100549819C (en) | 2009-10-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031235735A Expired - Fee Related CN100549819C (en) | 2003-05-29 | 2003-05-29 | Metal mask plate |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4933753B2 (en) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
| EP1746460B1 (en) * | 2005-07-21 | 2011-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, photomask and fabrication method thereof |
| JP5114367B2 (en) * | 2008-11-21 | 2013-01-09 | Ｈｏｙａ株式会社 | Photomask manufacturing method and pattern transfer method using the photomask |
| JP2011034681A (en) * | 2009-07-29 | 2011-02-17 | Hitachi Displays Ltd | Metal processing method, metal mask manufacturing method, and organic el display device manufacturing method |
| KR102097574B1 (en) * | 2012-01-12 | 2020-04-06 | 다이니폰 인사츠 가부시키가이샤 | Manufacturing method of metal mask formed resin layer |
| CN104793462A (en) * | 2014-01-16 | 2015-07-22 | 四川云盾光电科技有限公司 | Micro-nano-structure forming method |
| CN106660170B (en) * | 2014-07-01 | 2018-08-21 | 株式会社村田制作所 | Laser machining mask |
| CN105789031A (en) * | 2016-03-11 | 2016-07-20 | 中国建筑材料科学研究总院 | Mask for laser direct writing and etching method of mask |
| CN107414306B (en) * | 2016-05-20 | 2019-07-23 | 上海和辉光电有限公司 | A kind of metal mask preparation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1008870A1 (en) * | 1998-12-09 | 2000-06-14 | Nec Corporation | Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography |
| US6187482B1 (en) * | 1998-03-25 | 2001-02-13 | Canon Kabushiki Kaisha | Mask for evanescent light exposure, object to be exposed and apparatus using same |
-
2003
- 2003-05-29 CN CNB031235735A patent/CN100549819C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6187482B1 (en) * | 1998-03-25 | 2001-02-13 | Canon Kabushiki Kaisha | Mask for evanescent light exposure, object to be exposed and apparatus using same |
| EP1008870A1 (en) * | 1998-12-09 | 2000-06-14 | Nec Corporation | Enhanced optical transmission apparatus utilizing metal films having apertures and periodic surface topography |
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| CN1553283A (en) | 2004-12-08 |
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