CN100534712C - 对镜结构进行化学机械抛光的方法 - Google Patents
对镜结构进行化学机械抛光的方法 Download PDFInfo
- Publication number
- CN100534712C CN100534712C CNB2004100185644A CN200410018564A CN100534712C CN 100534712 C CN100534712 C CN 100534712C CN B2004100185644 A CNB2004100185644 A CN B2004100185644A CN 200410018564 A CN200410018564 A CN 200410018564A CN 100534712 C CN100534712 C CN 100534712C
- Authority
- CN
- China
- Prior art keywords
- polishing
- aluminium lamination
- dielectric layer
- glossing
- roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 77
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 57
- 238000005498 polishing Methods 0.000 title claims abstract description 53
- 239000004411 aluminium Substances 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000000059 patterning Methods 0.000 claims abstract description 5
- 238000003475 lamination Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000002002 slurry Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000008187 granular material Substances 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 230000003746 surface roughness Effects 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000002932 luster Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 58
- 239000004973 liquid crystal related substance Substances 0.000 description 20
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- -1 titanium nitrides Chemical class 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100185644A CN100534712C (zh) | 2004-05-18 | 2004-05-18 | 对镜结构进行化学机械抛光的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2004100185644A CN100534712C (zh) | 2004-05-18 | 2004-05-18 | 对镜结构进行化学机械抛光的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1699015A CN1699015A (zh) | 2005-11-23 |
CN100534712C true CN100534712C (zh) | 2009-09-02 |
Family
ID=35475347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100185644A Expired - Lifetime CN100534712C (zh) | 2004-05-18 | 2004-05-18 | 对镜结构进行化学机械抛光的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100534712C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5654365B2 (ja) * | 2011-01-26 | 2015-01-14 | 株式会社ディスコ | 研削装置 |
CN103008216B (zh) * | 2012-11-26 | 2015-10-07 | 中国计量科学研究院 | 铝合金压力气瓶的内壁处理工艺及处理装置 |
US9971073B2 (en) * | 2014-04-14 | 2018-05-15 | Corning Incorporated | Enhanced performance metallic based optical mirror substrates |
CN103915333A (zh) * | 2014-04-21 | 2014-07-09 | 上海联星电子有限公司 | 一种像素表面平整度实现方法 |
CN110596929A (zh) * | 2019-08-29 | 2019-12-20 | 深圳市科创数字显示技术有限公司 | 硅基液晶器件及其制作方法与波长选择开关 |
-
2004
- 2004-05-18 CN CNB2004100185644A patent/CN100534712C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1699015A (zh) | 2005-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111129 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corp. Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. |
|
CX01 | Expiry of patent term |
Granted publication date: 20090902 |
|
CX01 | Expiry of patent term |