CN100530504C - Light emitting screen structure and image forming apparatus - Google Patents
Light emitting screen structure and image forming apparatus Download PDFInfo
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- CN100530504C CN100530504C CNB2005101204666A CN200510120466A CN100530504C CN 100530504 C CN100530504 C CN 100530504C CN B2005101204666 A CNB2005101204666 A CN B2005101204666A CN 200510120466 A CN200510120466 A CN 200510120466A CN 100530504 C CN100530504 C CN 100530504C
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Abstract
In a flat type image forming apparatus formed by electron emitting devices, the invention is to provide a light emitting substrate, capable of relaxing influence of an abnormal discharge on the electron emitting devices. On a glass substrate 1 , a resistor member 4 extending in X- and Y-direction, and a black member 6 extending in X- and Y-directions are formed. Phosphors 5 are positioned in apertures of the black member 6 , and are covered by metal backs 7 divided in X- and Y-directions. The metal backs 7 and the resistor member 4 are electrically connected through the black member 6 , and the resistance between the metal backs 7 is defined by the resistor member 4 in the Y-direction in which the adjacent metal backs 7 have a wider gap than in the X-direction.
Description
Technical field
The present invention relates to be used for making up together the light emitting screen structure (luminous substrate) of imaging device (for example image display device), and relate to the imaging device that utilizes this luminous substrate with electron emission device.
Background technology
Utilize the electron emitting device of electron emission device to be applied to, for example, imaging device.For example, known have a kind of plane electron beam display floater, it is constructed as follows: the electron source substrate with a plurality of cold cathode electron emitter spares, one has and is used to quicken from the metal backing of electron emission device electrons emitted or the anode substrate of transparency electrode, and a fluorophor that is arranged opposite to each other and leaves a gap between these substrates.Compare with the cathode ray tube (CRT) of current popular, the weight of plane electron beam display floater is lighter, size is bigger.In addition, with other two-d display panel, for example liquid crystal two-d display panel, plasma display or electroluminescent display are compared, and it can provide higher brightness and the picture quality of Geng Gao.
In the imaging device of following type, wherein between cold cathode multiple electron source and aforementioned metal backing that is used for accelerated electron or transparency electrode, apply high pressure, higher voltage has the maximized advantage of the brightness that makes light emitted line.In addition, in some type of device, electrons emitted bifurcated before arriving comparative electrode, thus distance between electrodes is short in more realizing that high-resolution display is favourable more.
Yet, in this configuration, because between comparative electrode, can form high electric field inevitably, so thereby discharge may take place damages electron emission device.In the example of this discharge, meeting causes producing the hot spot phenomenon whereby with the electric current that the mode that concentrates forms on some part of shown image in addition.
For fear of these shortcomings, need to reduce discharge frequency or damage avoiding by reducing discharge as far as possible.
The damage that is caused by discharge is assumed to be it is because the big electric current that concentrates in single position causes in short-term, thereby it produces heat damage electron emission device, or because the instantaneous increase of voltage on the electron emission device causes electron emission device to damage.
Can be in order to reduce because discharge cause the electric current that damages, people have found out a kind of method, promptly limit a resistor between anode electrode and power supply, as shown in Figure 7 serially.Yet, when connecting 500 unit that are positioned on the vertical direction by the unit of row and column distribution in the horizontal direction by 1000, and with line ordered mode (line-sequential mode) when driving these elements, need open about 1000 devices simultaneously, this pattern causes following shortcoming.
When opening about 1000 devices simultaneously with the emission current that is assumed to each device 5 μ A, the electric current that can cause 0 to 5mA flows into anode.When the series resistance device that externally inserts a 1M Ω, as shown in Figure 7, and anode can produce 0 to 5kV voltage drop according to the device count of opening simultaneously when applying the voltage of 10kV.The brightness irregularities that will cause as a result, up 50%.
In addition, owing to applied high voltage, then also need to be considered as an electric charge that capacitor accumulated to relative flat board (panel and backboard) 71,72.For example, when as shown in Figure 7 negative electrode and the area of anode be 100cm
2, distance is 1mm, when potential difference was 10kV, the electric charge that is accumulated reached 1 * 10
6Coulomb, even then discharge 1 μ s, it also can cause producing a position electric current of 1A.This discharging current can cause device failure, thereby even there is not aforesaid brightness irregularities, configuration shown in Figure 7 can not solve this shortcoming fully.
For these shortcomings, present patent application proposes in references 1, cut apart an electrode, mode with non-parallel connection applies voltage to the scanning lines direction, and a resistor is provided between electrode and accelerating voltage bringing device, be suppressed at the discharging current that produces between the relative flat board whereby.
Fig. 8 has shown an one example, and Fig. 9 has shown its equivalent circuit.In the accompanying drawings, shown and cut apart electrode 81, resistor 82, secondary terminal 83, high resistance area 84, common electrode 85, panel 91 and backboard 92.Each is cut apart electrode 81 (for example being formed by the ITO film) and links to each other with common electrode 85 at an one terminal resistor 82 (for example being formed by the NiO film) that passes through, and can apply a high voltage from terminal 83 whereby.In this configuration, the electrode that is positioned at panel 91 1 sides shown in Figure 9 is cut apart, and cuts apart high resistance device R1 of insertion in the electrode at each, so that reduce the electric capacity of capacitor, reduces discharging current Ib2 whereby.So just might reduce the device voltage rising that causes by discharging current, thereby alleviate the damage of discharge place.
Disclose a kind of cold-cathode field emission display in addition in references 2, the gap L g between its anode voltage Va and the anode unit satisfies following Va/Lg＜1 (kV/ μ m) that concerns.By this configuration, the discharge in the time of might being reduced in improper the discharge between the anode unit reduces the size of discharging whereby.
References 1: Japan Patent No.3199682 (EP866491A)
References 2: Japanese Patent Application Publication No.2004-47408
As already explained, in the imaging device that constitutes by electron emission device, wish further to reduce the discharging current in the luminous substrate (anode substrate), so as when to be reduced in improper discharge to the damage of electron emission device.When between anode and the negative electrode improper discharge taking place, special hope is reduced in the secondary discharge that produces between the adjacent anode.On the other hand, wish to reduce the gap between the adjacent anode, so that obtain the more image of high definition.
Summary of the invention
An object of the present invention is to provide a kind of light emitting screen structure, it is used for further reducing discharging current, alleviates the influence of improper discharge to electron emission device whereby, thereby makes imaging device obtain gratifying durability and long-life.Especially, the invention provides a kind of luminous substrate structure, it can prevent in the distance between the adjacent anode that electricity from damaging not increasing.
Aspect first, the invention provides a kind of light emitting screen structure, it comprises:
Substrate;
A plurality of modes with row and column are arranged in on-chip light-emitting component;
A plurality of conductors, its each cover at least one light-emitting component, and they arrange with certain interval, thereby form the form of row and column; With
The resistor element that is electrically connected with a plurality of conductors;
Wherein resistor element forms grille-like, comprise the capable strip portion of extending along line direction, row strip portion along the column direction extension, and the aperture part between row strip portion and row strip portion, and the gap between conductor adjacent on the line direction is positioned at the aperture of grill-shaped resistor.
Aspect second, the invention provides a kind of imaging device, it comprises a plurality of electron emission devices, one has the electron source substrate that is used for applying to electron emission device the wiring of voltage, with a light emitting screen structure with light-emitting component, this light-emitting component is launched light by electron emission device emitting electrons ray, and wherein light emitting screen structure has the structure described in described light emitting screen structure (the present invention first aspect).
Description of drawings
Figure 1A and 1B are respectively profile and the plane graphs that schematically shows the luminous substrate configuration of first embodiment of the invention;
Fig. 2 is the perspective view that schematically shows display panel configurations among the embodiment of imaging device of the present invention;
Fig. 3 A and 3B are the sketches that schematically shows the configuration of luminous substrate in the second embodiment of the invention;
Fig. 4 A and 4B are the sketches that schematically shows the configuration of luminous substrate in the third embodiment of the invention;
Fig. 5 A and 5B are the sketches that schematically shows the configuration of luminous substrate in the fourth embodiment of the invention;
Fig. 6 A and 6B are the sketches that schematically shows the configuration of luminous substrate in the fifth embodiment of the invention;
Fig. 7 is the schematic diagram that shows the configuration of previous imaging device;
Fig. 8 is the schematic diagram that shows the configuration of previous luminous substrate;
Fig. 9 is the equivalent circuit figure of luminous substrate shown in Figure 8.
Embodiment
Luminous substrate of the present invention and imaging device relate to a kind of dull and stereotyped electron beam display unit.Especially, the electron beam display unit of utilizing field electronic emitter spare or surface conductive electron emission device is the preferred form of application of the present invention, and wherein general anode applies high voltage.
With reference now to Figure 1A and the luminous substrate of 1B explanation the present invention, basic configuration.
Figure 1A and 1B are the schematic diagrames that shows the configuration of a preferred embodiment of the luminous substrate of the present invention, and wherein a part is cut, so that illustrate the position component relation.In Figure 1A and 1B, shown glass substrate 1, common electrode 2, connected resistor 3, formed the resistor element 4 of grille-like, the fluorophor 5 that constitutes light-emitting component of the present invention, grill-shaped black element (blackmember) 6 and the metal backing 7 that constitutes anode.Hereinafter, grill-shaped black element 6 will be called the black element.
In the present invention, each resistor element 4 and black element 6 all form a grille-like along X and the extension of Y direction, and fluorophor 5 is installed in the aperture of black element 6.Metal backing 7 is arranged to cover one or more fluorophor 5, and each metal backing 7 is electrically connected with resistor element 4.In the present embodiment, resistor 4 overlaps with fluorophor 5 along the strip portion (Y direction strip portion) of Y direction extension.Resistor 4 links to each other with the common electrode 2 that is formed at glass substrate 1 outer peripheral portion by connecting resistor 3 along an end of Y direction extension in addition, and applies a high voltage by the secondary terminal (not shown).
In this configuration, the sheet resistance of resistor element 4 is lower than the sheet resistance of black element 6, and the resistance between the adjacent metal backboard 7 is limited by resistor element 4 on X and the Y direction whereby.In addition, by along applying a more high-resistance black element 6 in the gap of the metal backing 7 of directions X, can improve the puncture voltage (breakdownvoltage) between the metal backing 7.
When improper discharge, produce hundreds of potential differences that lie prostrate thousands of volts on the directions X between the adjacent metal backboard 7, it depends on the voltage that applied and the resistance of resistor element 4 certainly.When applying 3kV or higher voltage, can produce the potential difference of about 500V with the image that obtains to become clear.Suppose that in addition the gap of metal backing is 100 μ m to the maximum on the directions X, then can adopt puncture voltage is 5 * 10
6V/m or higher black element 6.
In resistor element 4, the strip portion (directions X strip portion) of extending along directions X overlaps with black element 6 in a parallel manner, and is positioned at the width of black element.In addition, resistor 4 strip portion (Y direction strip portion) of the extending position that must be positioned at and not overlap along the gap of directions X adjacent metal backboard along the Y direction.In other words, need following layout, promptly the gap of the aperture of resistor and metal backing overlaps.This is because if at the resistor 4 that is lower than black element 6 along resistance of existence between the directions X adjacent metal backboard 7, then puncture voltage can reduce.In this configuration, resistance along directions X adjacent metal backboard 7 can be remained on high level than metal backing along the longer circuit in the adjacent gap of directions X (by resistor 4) by one.As a result, resistor 4 does not show that current density increases, thereby has avoided electric damage.
Each is cut apart metal backing 7 and all links to each other with the part that resistor 4 extends along the Y direction, thereby the number of the Y direction strip portion of resistor 4 equals the number of cutting apart of metal backing 7 on the directions X.Yet, when the width of the Y of resistor 4 direction strip portion has in limited time, can adopt many (N) individual resistor to be used for same function, and in the example shown in Fig. 4 A and 4B, each metal backing all link to each other with many (N) individual Y direction strip portion of resistor element 4.
In addition, when resistor element 4 usefulness opaque materials constitute, with the Y direction strip portion of resistor 4 and fluorophor 5 superimposed be unfavorable.In this case, shown in Fig. 4 A and 4B, the Y direction strip portion that makes resistor 4 is than narrower with the black element of black element 6 superimposed layouts, so that avoid influence to show.Resistor 4 also might form aperture shown in Fig. 5 A and 5B along the strip portion of Y direction, is located immediately at the below of fluorophor.
Electrical connection between metal backing 7 and the resistor 4 is not particularly limited.At Figure 1A, 1B, 3A, 3B, 4A, 4B among 5A and the 5B, is electrically connected by black element 6, but also may forms the aperture in black element 6, and connects metal backing 7 and resistor 4 by these apertures.In addition, if necessary, can make the conducting element of connection by other.An example of this configuration will be explained with reference to figure 6A and 6B.In Fig. 6 A and 6B, the Y direction strip portion of resistor 4 has from the outstanding lead portion (lead portion) 9 of this strip portion.Black element 6 has an aperture in the zone corresponding to this lead portion 9 in addition.Fill with electric conducting material in aperture 8, thereby obtain to be electrically connected between resistor 4 and metal backing 7.As electric conducting material 8, preferably adopt the ruthenium-oxide of low-resistivity, but the present invention is not limited to this.
Grill-shaped resistor element 4 can form with any material that can controlling resistance, and when with fluorophor 5 when superimposed, shown in Figure 1A and 1B, nesa coating is preferred, because it can not cover the image demonstration.In this case, can adopt ITO or analog, preferably have 100k Ω/square (sheet resistance of k Ω/square).
In the present invention, a purpose utilizing metal backing 7 is that the light that will send and import from fluorophor 5 carries out direct reflection to glass substrate 1, improves brightness whereby.Another purpose comprises utilizes metal backing as the electrode that applies the resistance beam accelerating voltage, and protects fluorophor 5 not damaged by the anionic collision that produces in envelope shown in Figure 2 (envelope) 18, and this will make an explanation in the back.
Cutting apart metal backing 7 can be rectangular, but under the situation of improper discharge, is cutting apart meeting generation potential difference between the metal backing, and electric field concentrates on the core whereby, and can produce the electric leakage discharge.Therefore, the rectangle that preferably has fillet.For the purpose of avoiding discharging, its radius of curvature is preferably bigger, but must consider that the shape of irradiated region and electron beam is determined.In the surface conductive electron emission device (SCE) that the present invention adopts,, therefore more preferably be to adopt the curvature that is complementary with this arc because electron beam is curved.
The formation of the metal backing of cutting apart along X and Y direction 7 is by forming metal backing 7 on the whole substrate of fluorophor 5 bearing, and by the photoetch composition.Can also adopt the method for evaporation, its utilization has the metal mask (being called the mask evaporation) in expectation aperture.
And metal backing 7 preferably is divided into red, green and blue look phosphor elements, and it is arranged continuously along directions X.In this case, it is higher that the resistance of resistor element 4 can become, littler because the electrorheological of resistor element Y direction strip portion gets, and can further reduce discharging current whereby.Yet, consider along the puncture voltage between the directions X adjacent metal backboard 7, on directions X, be that the unit is cut apart preferably with two or more fluorophor, be the unit preferably with the pixel that forms by a series of red, green and blue look fluorophor.Yet, can also be that the unit is cut apart with two or more pixels.Figure 1A and 1B have shown with the fluorophor to be the example that the unit is cut apart, and Fig. 4 A-6B has shown with the pixel to be the example that the unit is cut apart.In addition, can be that the unit carries out cutting apart on the Y direction with two or more pixels.
Under the driving condition of imaging device, the resistance of grill-shaped resistor element 4 can be owing to voltage drop causes significant luminance loss.Emission current at each electron emission device is under the situation of 1 to 10 μ A, and resistor element 4 preferably has the resistance of 1k Ω to 1G Ω.The actual upper bound of resistance is limited in the following scope, and promptly voltage is reduced to 10% to 20% of the voltage that applies, and can not produce the inhomogeneous of brightness.In addition, the puncture voltage of resistor element 4 is preferably 1 * 10
6V/m or higher.When the volume resistivity of resistor element 4 is 1 * 10
-4Ω cm or when higher then thinks to have obtained this puncture voltage.
In addition, cause the directions X strip portion of the concentrated grill-shaped resistor element 4 of electric field and the cross section of Y direction strip portion easily, preferably have the curvature shown in Figure 1A and 1B.The radius of curvature preferably width with the resistor element 4 that extends along X and Y direction is identical or littler, makes electric field concentration saturated and avoid secondary to damage when discharge whereby.
In Figure 1A and 1B, what connect resistor element 4Y direction strip portion and common electrode 2 is connected resistor 3, and its resistance is preferably between 10k Ω to 1G Ω, more preferably between 10k Ω to 1M Ω.Even thereby when discharge takes place, also discharging current might be limited in backboard near common electrode 2.
The sheet resistance of black element 6 need be enough higher than resistor element 4, is preferably 100M Ω/square or higher.In addition, black element 6 need have high puncture voltage.Say clearly, need 5 * 10
6V/m or higher puncture voltage.More preferably, 4 * 10
7V/m or higher puncture voltage allow to apply higher voltage to metal backing, obtain the image of high brightness whereby.In order to obtain this puncture voltage, need the volume resistivity of at least 100 Ω m, be preferably 10k Ω m or higher.
Except the material that mainly is made of graphite of common employing, black element 6 can be formed by the material of any demonstration poor light transmission and reflectivity.No matter show still in the example that colour shows in monochrome, can by preformed precipitate method or printing process with phosphor coated on glass substrate 1.
Hereinafter, as an example of the imaging device that adopts the luminous substrate of the present invention, will explain the configuration of electron beam display floater with reference to figure 2.In Fig. 2, shown electron source substrate 11, it is corresponding to backboard, panel 17, it constitutes the anode substrate corresponding to the luminous substrate of the present invention, base element 15 and housing 16, wherein panel 17, base element 15 and housing 16 constitute vacuum envelopes 18.In addition, electron emission device 14, scan line 12 and holding wire 13 link to each other with the device electrode of electron emission device 14 respectively.Substrate at electron source substrate 11 has under the situation of sufficient intensity, and housing 16 can be directly installed on the substrate, can need not base element 15.
In order in this display floater, to form image, apply predetermined voltage continuously to scan line 12 and holding wire 13, thereby selectively drive electron emission device 14, use emitting electrons irradiation fluorophor 5 whereby, thereby obtain bright spot at assigned address.Metal backing 7 is high pressure Hv in addition, thereby guarantees that current potential is higher than electron emission device, so that quicken institute's electrons emitted and obtain bright spot with higher brightness.The voltage that is applied in the hundreds of volt arrives the scope of several kilovolts, also depends on the performance of fluorophor 5 usually certainly.Therefore, the distance between backboard 11 and the panel 17 is chosen in 100 μ m usually to several millimeters, so that can not produce dielectric breakdown (i.e. discharge) under the voltage in a vacuum this applying.
In the example that utilizes luminous substrate preparation imaging device of the present invention, can provide gettering material in addition, so that make envelope keep high vacuum in 18 inherent long times.
In this example, if gettering material is placed in the zone of being shone by the electron emission device electrons emitted, then can reduce the energy of electron beam, thus the brightness that can not obtain to expect.Therefore, gettering material is preferably located in and avoids the zone shone by electron beam.In addition, in order to increase the area of getter, it preferably forms on a rough surface.
(example)
(example 1)
Having the luminous substrate that disposes shown in Figure 1A and 1B is prepared with following program.
On glass substrate 1, form the ITO film in entire upper surface, and handle formation grill-shaped figure, so that obtain resistor element 4 by the lithographic plate photographic printing.Then, form the NiO film of composition as connecting resistor 3.Then, form common electrode 2, thereby be connected resistor 3 contacts with whole with Ag cream.Then, on the ITO film of composition, print NP-7803 (manufacturing of Noritake Kizai company) and, then be coated with and cure red, green and blue look fluorophor 5 as black element 6.At last, on fluorophor 5, form island shape metal backing 7 by vacuum evaporation method.
In this example, adopting the thickness of being made by Asahi glass company is the glass substrate PD200 of 2.8mm.In addition in rectangular resistor element 4, the width of the ITO film that extends along the Y direction is 100 μ m, thickness is 100nm, and the sheet resistance of regulating the ITO film is 30k Ω/square, thereby along the resistance that obtains about 120k Ω between the Y direction adjacent metal backboard 7.In addition, the width of the ITO film that extends along directions X is 30 μ m, thereby along the resistance that obtains about 400k Ω between the directions X adjacent metal backboard (resistance separately).In order not disturb this resistance relation, the sheet resistance of black element 6 is adjusted to 1 * 10
13Ω/square (volume resistivity: 1 * 10
8Ω m, film thickness: 10nm), its sheet resistance than ITO is sufficiently high.In addition, because just in case discharge, producing high electric field between the adjacent metal backboard 7 on the directions X, so the puncture voltage of black element 6 is 4 * 10
7V/m.
The resistance that connects resistor 3 is 10M Ω.Directions X strip portion that resistor element 4 extends along directions X with along in the cross section between the Y direction strip portion of Y direction extension, in case because discharge then current density can increase, so form certain curvature so that discharge this current concentration.In this example, radius of curvature is chosen as 30 μ m, is complementary with fillet bandwidth on the directions X.Like this, obtained the luminous substrate (light emitting screen structure) shown in Figure 1A and 1B, wherein arrangement of parts becomes to make the gap of metal backing on the directions X consistent with the aperture of grill-shaped resistor element 4.
The imaging device of Fig. 2 is prepared as panel 17 by adopting luminous substrate of the present invention.On backboard 11, by the N * M on the substrate 11 arrangements of cells surface conductive electron emission device, it comprises that one has electron emission part and is connected conducting film between a pair of device electrode.These electron emission devices with M scan line 12 of even resin formation and N holding wire 13 distribution in addition, obtain multiple electron beam source by respectively whereby.In this example, scan line 12 is positioned on the holding wire 13, crosses over the interlayer dielectric (not shown).Scan line 12 receives sweep signal by lead end Dx1-Dxm, and holding wire 13 receives modulation signal (picture signal) by lead end Dy1-Dyn.
By conducting film being carried out known electroforming and electricity activation formation surface conductive electron emission device.So the backboard of preparation and panel are sealed around housing 16, thereby obtain imaging device.Electroforming is handled, the preparation of electric activation processing and imaging device can be carried out by the processing that illustrates among the Japan Patent No.3199682 for example.
The discharge resistance test of carrying out by the inner vacuum of studying (lessoning) this imaging device can confirm that the current ratio that flows into panel 17 and backboard 11 during discharge is not along vertical little with the configuration divided in horizontal direction metal backing.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 250V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 2)
The luminous substrate that disposes shown in preparation Fig. 3 A and the 3B.This example is similar to example 1, and just 3 red, green and blue fluorophor 5 arranging continuously along directions X are covered by a monometallic backboard 7 together.
In this example, the ITO resistor is 100 μ m along the width of the Y direction strip portion that the Y direction is extended, thickness is 100nm, and the sheet resistance of ITO film is adjusted to 30k Ω/square, thereby at the resistance along the about 120k Ω of acquisition between the Y direction adjacent metal backboard 7.In addition, the width of the ITO film that extends along directions X is 50 μ m, thereby along the resistance that obtains about 800k Ω between the directions X adjacent metal backboard (resistance separately).In addition, the cross section of resistive element 4 grid graphs has the radius of curvature of 50 μ m, is complementary with fillet bandwidth on the directions X.
Like this, obtained the luminous substrate (light emitting screen structure) shown in Fig. 3 A and 3B, it is consistent with the aperture of grill-shaped resistor element 4 that wherein parts are arranged to make the gap along between the metal backing of directions X.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 3)
The luminous substrate that disposes shown in preparation Fig. 4 A and the 4B.This example is similar to example 1, and just resistor element 4 is positioned under the black element 6, and the Y direction strip portion of two resistor elements 4 is provided for each metal backing along the Y direction.
In this example, the width of ITO resistor, Y direction strip portion is 50 μ m, and the sheet resistance of ITO film is adjusted to 30k Ω/square, thereby at the resistance along the about 120k Ω of acquisition between the Y direction adjacent metal backboard 7.In addition, the width of the directions X strip portion of ITO film is 30 μ m, thereby at the resistance (resistance separately) along the about 800k Ω of acquisition between the directions X adjacent metal backboard.In addition, the cross section of resistive element 4 grid graphs has the radius of curvature of 50 μ m, is complementary with fillet bandwidth on the directions X.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 4)
The luminous substrate that disposes shown in preparation Fig. 5 A and the 5B.This example is similar to example 2, and just the aperture that forms in the Y of resistor element 4 direction strip portion is located immediately under the fluorophor.
In this example, in the Y direction strip portion of ITO resistor element 4, be 50 μ m corresponding to the width of the part (part that is divided into two bands) of fluorophor, the width of other parts is 100 μ m.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 5)
The luminous substrate that disposes shown in preparation Fig. 6 A and the 6B.This example is similar to example 4, just formed an outstanding lead portion 9 of Y direction strip portion from the resistor element 4 that extends along the Y direction, in the part of black element 6, formed an aperture corresponding to lead portion 9, and fill this aperture with electric conducting material 8, thereby be electrically connected resistor element 4 and metal backing 7 by this electric conducting material.
In this example, when being formed at the whole lip-deep ITO composition of glass substrate 1, form lead portion 9 simultaneously.Give black element 6 printing apertures then, be coated with fluorophor 5 afterwards, also cured by printing process printing conductive material 8.Electric conducting material 8 is made of ruthenium-oxide.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 6)
To prepare luminous substrate with example 2 similar modes, just the further broadening on the Y direction of the metal backing 7 shown in Fig. 3 A and the 3B arrives and covers two pixels.
In this example, the ITO resistor is 100 μ m along the width of the Y direction strip portion that the Y direction is extended, and the sheet resistance of ITO film is adjusted to 60k Ω/square, thereby at the resistance along the about 240k Ω of acquisition between the Y direction adjacent metal backboard 7.In addition, the width of the directions X strip portion of ITO film is 50 μ m, thereby at the resistance (resistance separately) along the about 1.6M Ω of acquisition between the directions X adjacent metal backboard.In addition, the cross section of resistive element 4 grid graphs has the radius of curvature of 50 μ m, is complementary with fillet bandwidth on the directions X.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
(example 7)
To prepare luminous substrate with example 2 similar modes, just the further broadening on the Y direction of the metal backing 7 shown in Fig. 3 A and the 3B arrives and covers two pixels.In addition, the resistor element 4 Y direction strip portion of extending along the Y direction be arranged to 6 fluorophor arranging along directions X in the 3rd fluorophor 5 overlap.
In this example, the ITO resistor is 100 μ m along the width of the Y direction strip portion that the Y direction is extended, and the sheet resistance of ITO film is adjusted to 30k Ω/square, thereby at the resistance along the about 120k Ω of acquisition between the Y direction adjacent metal backboard 7.In addition, the width of the directions X strip portion of ITO film is 60 μ m, thereby at the resistance (resistance separately) along the about 1.6M Ω of acquisition between the directions X adjacent metal backboard.In addition, the cross section of resistive element 4 grid graphs has the radius of curvature of 50 μ m, is complementary with fillet bandwidth on the directions X.
To prepare imaging device shown in Figure 2, still adopted the luminous substrate of this example as panel with example 1 identical mode.
The discharge resistance test of carrying out by the inner vacuum of studying this imaging device can confirm, it is little that the current ratio that flows into panel 17 and backboard 11 during discharge is not cut apart the configuration of metal backing along the vertical and horizontal directions.
Imaging device does not produce point defect at point of discharge, and the state before can keeping discharging.
In addition, imaging device demonstrates 275V or lower voltage drop in driven, thereby in visible observation, the reduction of brightness is in gratifying level.
In the present invention, conductor (metal backing or anode) is cut apart along X and Y direction, thereby the metal backing of cutting apart is electrically connected by the grill-shaped resistor element.Therefore, even under the final situation that takes place to discharge between metal backing and the electron emission device, also can reduce the potential difference between the adjacent metal backboard by the resistance of control resistor element.Thereby might suppress because the secondary discharge (discharge between the adjacent metal backboard) that the discharge that produces between metal backing and the electron emission device causes.This secondary discharge means the short circuit between the adjacent metal backboard, promptly relates to from the electric charge supply of metal backing that links to each other, thereby causes the discharging current between metal backing and the electron emission device to increase.In the present invention, the adjacent metal backboard is not insulated fully, but is connected by certain controllable resistor.Therefore,, between the adjacent metal backboard, also can only bring out faint electric current, reduce the potential difference between them whereby, prevent short circuit owing to secondary discharge just in case between metal backing and electron emission device, finally discharge.In the present invention, because have narrower gap, so between this adjacent metal backboard, resistor is not set along directions X adjacent metal backboard.In other words, this layout makes that the gap of metal backing overlaps on the aperture of grill-shaped resistor element and the directions X.On directions X, provide enough high-resistance black element in the gap between metal backing.When between the adjacent metal backboard, setting up enough puncture voltages, this configuration with along existing the example of resistance to compare in the gap between the metal backing of directions X, allow between directions X adjacent metal backboard, obtaining high resistance.Thereby for to set up enough puncture voltages, prevent to occur between the adjacent metal backboard on the directions X too much electric current simultaneously possibility is provided, reduce the size of discharging between metal backing and the electron emission device whereby.Therefore, in this configuration, discharging current is controlled by the resistance of grill-shaped resistor, thereby is limited by grill-shaped resistor element (current-limit resistor), the effect of the inhibition discharging current that can obtain to expect whereby.
Therefore, utilize the imaging device of light emitting screen structure of the present invention (luminous substrate) can prevent the influence of improper discharge to electron emission device, and prevent that the electricity between the metal backing from damaging, can also provide have the excellent in resistance expenditure, the imaging device of long life more.
The application requires in the priority of the Japanese patent application No.2004-334071 of submission on November 18th, 2004, and the full content of this application is being hereby incorporated by reference.
Claims (14)
1. light emitting screen structure comprises:
Substrate;
A plurality of light-emitting components, its figure by row and column on substrate is arranged;
A plurality of conductors, wherein each conductor covers at least one light-emitting component, thereby and these a plurality of conductors arrange the figure that forms row and column at certain intervals; With
Resistor element, it is electrically connected described a plurality of conductor;
Wherein resistor element forms grille-like, the row strip portion and the aperture part between capable strip portion and row strip portion that comprise the capable strip portion that follows direction and extend, extend along column direction, and the gap that follows the adjacent conductor of direction is positioned at the aperture of grill-shaped resistor.
2. according to the light emitting screen structure of claim 1, the gap that wherein follows the adjacent conductor of direction is less than the gap along the adjacent conductor of column direction.
3. according to the light emitting screen structure of claim 2, wherein in the gap portion of capable strip portion between the conductor adjacent of resistor element along column direction.
4. according to the light emitting screen structure of claim 1, wherein said a plurality of light-emitting components are a plurality of fluorophor of arranging at certain intervals, thereby a black element is clipped between the adjacent fluorophor.
5. according to the light emitting screen structure of claim 4, wherein the sheet resistance of resistor element is less than the sheet resistance of black element.
6. according to the light emitting screen structure of claim 4, wherein the grill-shaped resistor element is electrically connected with metal backing by the aperture that is located in the black element.
7. according to the light emitting screen structure of claim 1, each in wherein said a plurality of conductors is rectangular, has curvature at its corner part.
8. according to the light emitting screen structure of claim 1, wherein the grill-shaped resistor element is formed by transparent resistance device film.
9. according to the light emitting screen structure of claim 1, wherein the sheet resistance of resistor element is 100k Ω/square or lower.
10. according to the light emitting screen structure of claim 1, wherein the volume resistivity of resistor element is 1 * 10
-4Ω cm or higher.
11. according to the light emitting screen structure of claim 4, wherein the volume resistivity of black element is 100 Ω m or higher.
12. according to the light emitting screen structure of claim 4, wherein the volume resistivity of black element is 10k Ω m or higher.
13. according to the light emitting screen structure of claim 4, wherein the sheet resistance of black element is 100M Ω/square or higher.
14. imaging device, it comprises a plurality of electron emission devices, electron source substrate and light emitting screen structure, electron source substrate has the wiring that is used for applying to described electron emission device voltage, this light emitting screen structure has light-emitting component, this light-emitting component is by launching light by the irradiation of described electron emission device electrons emitted, and wherein this light emitting screen structure has structure according to claim 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004334071 | 2004-11-18 | ||
| JP2004334071 | 2004-11-18 | ||
| JP2005320713 | 2005-11-04 |
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| Publication Number | Publication Date |
|---|---|
| CN1801445A CN1801445A (en) | 2006-07-12 |
| CN100530504C true CN100530504C (en) | 2009-08-19 |
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|---|---|---|---|
| CNB2005101204666A Expired - Fee Related CN100530504C (en) | 2004-11-18 | 2005-11-18 | Light emitting screen structure and image forming apparatus |
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| CN (1) | CN100530504C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010061999A (en) * | 2008-09-04 | 2010-03-18 | Canon Inc | Emitter substrate and image display apparatus using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1476626A (en) * | 2000-11-24 | 2004-02-18 | ��ʽ���綫֥ | Display |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1476626A (en) * | 2000-11-24 | 2004-02-18 | ��ʽ���綫֥ | Display |
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| CN1801445A (en) | 2006-07-12 |
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