CN100527365C - Plasma film-forming method and plasma film-forming apparatus - Google Patents
Plasma film-forming method and plasma film-forming apparatus Download PDFInfo
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- CN100527365C CN100527365C CNB2004800106138A CN200480010613A CN100527365C CN 100527365 C CN100527365 C CN 100527365C CN B2004800106138 A CNB2004800106138 A CN B2004800106138A CN 200480010613 A CN200480010613 A CN 200480010613A CN 100527365 C CN100527365 C CN 100527365C
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Abstract
In the plasma filming method and the device, the upper opening of a vacuum chamber is blocked through dielectric medium and a plane antenna component is arranged on the opening. A coaxial waveguide tube is arranged on the plane antenna component so that a microwave generator is connected with the waveguide tube. A plurality of slits whose lengths are half of the wavelength of the microwave are arranged on the plane antenna component and are shaped like concentric circles; the material gas is processed with plasma ionization by the microwave emitted to the processing atmosphere in a circularly polarized wave mode from the slits so that the plasma is defined by the mean square velocity and the fluorocarbon film is formed by the plasma with the electronic temperature which is under 3eV and the electronic intensity which is more than 5*10<11>/cm<3>. Under the situation, the operational pressure is set to be under 19.95Pa for the operation. Based on the proposal, when the plasma is used to form fluorocarbon film, the molecular chain of the material gas such as the C5F8 gas is decomposed property to obtain the chain structure of longer CF chain; thereby, the excellent layer insulation film with small dielectric constant and small leakage current is formed.
Description
Technical field
The present invention relates to form the plasma film forming method and the plasma film forming device of dielectric film, for example fluoridize carbon film (fluorocarbon film) by plasma.
Background technology
As a kind of method that makes the semiconductor device Highgrade integration, people adopt Miltilayer wiring structure.In order to adopt Miltilayer wiring structure, make between the wiring layer of the wiring layer of n layer and (n+1) layer to link to each other, and will form the film that is known as interlayer dielectric in the zone outside conductive layer by conductive layer.Representative interlayer dielectric has silicon oxide film, and in order further to improve the operating rate of device, the dielectric constant of interlayer dielectric is reduced.
Under this background, the fluoridize carbon film is subjected to people's attention, compares with silicon oxide film, adopts above-mentioned fluoridize carbon film can reduce dielectric constant significantly.As the film build method of this fluoridize carbon film, it is known that the spy opens flat 11-162960 communique.Record according to the paragraph 0016 to 0018 of the document, that the unstrpped gas of this fluoridize carbon film is used is the C5F8 of structure with linked rings, the interaction in microwave by 2.45GHz and 875 Gausses' magnetic field produces electron cyclotron resonace (ECR) makes Ar gas etc. be used for producing isoionic gas plasmaization, makes above-mentioned C5F8 gas plasmaization make the fluoridize carbon film go up film forming at semiconductor wafer (below be called wafer) by this plasma.
As unstrpped gas, people also know C4F8 etc., but as shown in Figure 8, use C5F8 then to make its decomposition product be stereochemical structure easily, thereby has such advantage, that is, can access the interlayer dielectric that the C-F chain is more firm thereby dielectric constant is low, leakage current is also little and film strength is high and the stress tolerance is high.
Yet, when forming film,, under gas phase condition, reacting easily if improve operational pressure by plasma, the particle that this reaction produced can be attached on the wafer, and this particle might become dust and disperses everywhere in course of conveying.In addition, can make isoionic electron density reduction and cause film forming speed to reduce, can't adapt to the requirement of mass production because productivity ratio is low.Therefore, its prerequisite is operational pressure (handling the pressure of atmosphere) will be set under the lower pressure that for example is lower than 100Pa and carry out film forming.
But if operational pressure is low excessively, then the electron temperature in the plasma improves, and causes the unstrpped gas excessive decomposition, is that molecule is become diverse The Nomenclature Composition and Structure of Complexes by the fine disjunction of what is called, can't make original raw material The Nomenclature Composition and Structure of Complexes obtain utilizing.In the occasion of for example C5F8 gas being used as raw material, by the decomposition product of fine decomposition with accumulation on wafer and be disordered state, thereby can't obtain the low film of dielectric constant, and chemical property variation such as mechanical performance such as electric property, film strength and stress tolerance such as leakage current and resistance to water.Though the advantage of C5F8 gas is for example can obtain the chain structure of the solid of (CF2), but excellent fluoridize carbon film such as the low and mechanical performance of dielectric constant obtained, but present situation is that this advantage fails to be fully played in the middle of actual.Though improve operational pressure electron temperature is reduced, avoid the raw material excessive decomposition, but this also can bring problems such as aforementioned dust, film forming speed, its result, these parameters exist conflicting relation, finally become to hinder to realize the film formed reason of fluorocarbon.
Summary of the invention
The present invention aims to provide a kind of like this device and method, that is, when forming dielectric film making the unstrpped gas plasma, raw material is formed utilized and obtained having the dielectric film of original strand.Another object of the present invention provides a kind of film formation device and film build method that can access the low and dielectric film that electric property is excellent of dielectric constant.
For achieving the above object, technical solution of the present invention 1 is on the substrate on a kind of placement section in being placed on airtight container handling, the plasma that is produced by the unstrpped gas plasma forms the plasma film forming method of dielectric film, it is characterized in that, the electron temperature that defines with mean square velocity that plasma between the surface of unstrpped gas supply port and said substrate produces in the space is below the 3eV, and electron density is 5 * 10
11Individual/cm
3More than.
According to this technical scheme, because electron temperature is below the 3eV, thereby can avoid the unstrpped gas excessive decomposition, therefore, can access original molecular structure of the performance of having utilized unstrpped gas, obtain the dielectric film that for example dielectric constant is low and electric property is excellent.
The feature of technical solution of the present invention 2 is, with microwave via waveguide to the flat plane antenna member channeling conduct that is provided with in opposite directions with placement section, launch said microwave from a plurality of slits that on this flat plane antenna member, along the circumferential direction form, utilize the energy of this microwave to make the unstrpped gas plasma.
The feature of technical solution of the present invention 3 is, the length dimension of said slit be set in said flat plane antenna member said waveguide one side microwave wavelength 1/2, and the said plasma of said flat plane antenna member produce space one side microwave wavelength 1/2 between.
The feature of technical solution of the present invention 4 is that said a plurality of slits are that the center is concentric circles or the vortex shape is arranged with the central authorities of said flat plane antenna member.
The feature of technical solution of the present invention 5 is that microwave is launched as circularly polarized wave or linearly polarized wave from said flat plane antenna member.
The feature of technical solution of the present invention 6 is that the pressure of handling atmosphere is below 19.95Pa.According to this technical scheme, owing to be to carry out film forming below the pressure in the container handling is set in 19.95Pa (150mTorr), therefore, by in the example of experiment described later also as can be known, by process conditions being selected can obtain the dielectric film that dielectric constant is low and electric property is excellent.
The feature of technical solution of the present invention 7 is that the dielectric film that forms on said substrate is the fluoridize carbon film.
The feature of technical solution of the present invention 8 is that said unstrpped gas is C5F8 gas.
The feature of technical solution of the present invention 9 is to comprise: airtight container handling, inside are provided with the placement section of placing substrate; The unstrpped gas supply unit is supplied with the unstrpped gas that is used for forming dielectric film on the said substrate in said container handling; Microwave generator produces the microwave that is used for making said unstrpped gas plasma; Waveguide will be produced by this microwave generating mechanism and be directed to microwave in said container handling; And the flat plane antenna member, be connected on this waveguide and and be provided with in opposite directions with said placement section, along the circumferential direction be formed with a plurality of slits; And, produce the electron temperature that defines with mean square velocity in the space below 3eV with the plasma between the surface of the unstrpped gas supply port that can make said unstrpped gas supply unit and said substrate, and electron density is 5 * 10
11Individual/cm
3More than.
The feature of technical solution of the present invention 10 is, the length dimension of said slit be set in said flat plane antenna member said waveguide one side microwave wavelength 1/2, and the said plasma of said flat plane antenna member produce space one side microwave wavelength 1/2 between.
The feature of technical solution of the present invention 11 is that said a plurality of slits are that the center is concentric circles or the vortex shape is arranged with the central authorities of said flat plane antenna member.
The feature of technical solution of the present invention 12 is that microwave is launched as circularly polarized wave or linearly polarized wave from said flat plane antenna member.
The feature of technical solution of the present invention 13 is that the dielectric film that forms on said substrate is the fluoridize carbon film.
The feature of technical solution of the present invention 14 is that said unstrpped gas is C5F8 gas.
Description of drawings
Fig. 1 constitutes the longitudinal sectional view of showing to the summary as the plasma film forming device of form of implementation of the present invention.
Fig. 2 is the vertical view that employed the 2nd gas supply part in the above-mentioned plasma film forming device is showed.
Fig. 3 is the stereogram after the biopsy cavity marker devices of employed antenna part in the above-mentioned plasma film forming device.
Fig. 4 is the vertical view of employed flat plane antenna member in the above-mentioned plasma film forming device.
Fig. 5 is the key diagram of the relation of electron number and electron temperature being showed for the definition to electron temperature describes.
Fig. 6 is the key diagram that the experimental result of the dielectric constant of dielectric film and leakage current is showed.
Fig. 7 is the key diagram that the experimental result of the dielectric constant of dielectric film and leakage current is showed.
Fig. 8 is the key diagram that the molecular structure of the molecular structure of unstrpped gas and dielectric film is showed.
Embodiment
Below, just a form of implementation of plasma film forming device of the present invention describes in conjunction with Fig. 1 to Fig. 7.As shown in Figure 1, this plasma film formation device is to utilize the radial slit antenna to produce isoionic CVD (chemical vapor deposition) device.Among the figure 1 is the container handling (vacuum chamber) that for example is cylinder-shaped formation generally, and the sidewall of container handling 1 and bottom for example constitute by mixing al stainless steel etc., are formed with the diaphragm that is formed by aluminium oxide on the inner wall surface.
At the position, about center of container handling 1, serving as a contrast below being provided with that insulating material 11a is provided with, as the mounting table 11 of the placement section that is used for placing substrate, for example wafer W.This mounting table 11 is for example by aluminium nitride (AlN) or aluminium oxide (Al
2O
3) constitute, inside is provided with the but cooling water pipe 11b of medium circulation of cooling, and is provided with the not shown heater that forms warm accent portion with this cooling water pipe 11b.The placed side of mounting table 11 constitutes to have static sticking function.In addition, it is that the biasing of for example 13.56MHz links to each other with mounting table 11 with high frequency electric source 12 that frequency is arranged, and can make the surface of mounting table 11 become negative potential with high frequency can very vertically to attract ion in the ion plasma thereby setover.
The top of said container handling 1 is open, in this part, is serving as a contrast seal (not shown), the shape when for example overlooking such as O type ring with mounting table 11 with being provided with opposite to each other in the middle of being provided with and is being roughly the 1st circular gas supply part 2.This gas supply part 2 is for example by Al
2O
3Constitute, with mounting table 11 face in opposite directions on be formed with a plurality of gas supply holes 21.An end that is formed with gas flowing path 22, the 1 gas feed paths 23 that are communicated with an end of gas supply hole 21 in the inside of gas supply part 2 links to each other with this gas flowing path 22.On the other hand, the other end of the 1st gas feed path 23 is connected to the supply source 24 and the hydrogen (H of argon gas (Ar) as plasma gas or krypton gas (Kr) etc.
2) supply source 25 on, these gases are supplied with to gas flowing path 22 via the 1st gas feed path 23, supply with to the space of the below of the 1st gas supply part 2 equably via said gas supply hole 21.In this example, be 50mm with the distance setting between the surface of the lower surface of the 1st gas supply part 2 and the wafer W on the mounting table 11.
In addition, separated shape when for example overlooking was roughly the 2nd circular gas supply part 3 between said container handling 1 had for example with them between its mounting table 11 and the 1st gas supply part 2.The 2nd gas supply part 3 is by the aluminium that for example contains magnesium (Mg) (Al) alloy or mix electric conductor such as Al stainless steel and constitute, with mounting table 11 face in opposite directions on be formed with a plurality of the 2nd gas supply holes 31.In the inside of the 2nd gas supply part 3, an end that is formed with grid-like gas flowing path 32, the 2 gas feed paths 33 that are communicated with an end of gas supply hole 31 for example shown in Figure 2 links to each other with this gas flowing path 32.In addition, on the 2nd gas supply part 3, be formed with a plurality of peristomes 34 that run through this gas supply part 3.This peristome 34 is to go for unstrpped gas in plasma or the plasma can be passed in the space of these gas supply part 3 belows, for example is to form between adjacent gas flowing path 32.
Here, the 2nd gas supply part 3 with supply with via the 2nd gas feed path 33 as the unstrpped gas that contains fluorine and carbon of unstrpped gas for example the supply source 35 of C5F8 gas link to each other, this unstrpped gas flows through from gas flowing path 32 successively via the 2nd gas feed path 33, and supplies with equably to the following side space of the 2nd gas supply part 3 via said gas supply hole 31.V1～V3 among the figure is a valve, 101～103rd, and the flow adjustment part.
On the top of said the 1st gas supply part 3, the centre is serving as a contrast seals (not shown) such as O type ring and is being provided with for example by Al
2O
3 Cover plate 13 Deng dielectric constitutes on the top of this cover plate 13, is provided with the antenna part 4 that closely contacts with this cover plate 13.This antenna part 4 as shown in Figure 3, has the flat antenna body 41 that is shaped as circular lower surface one side opening when overlooking and with the flat plane antenna member (slit plate) 42 of the peristome shutoff circular plate type that get up, that be formed with a plurality of slits of said lower surface one side of this antenna body 41, above-mentioned antenna body 41 and flat plane antenna member 42 are made of conductor, have constituted the circular waveguide of flat hollow.
In addition, between said flat plane antenna member 42 and antenna body 41, be provided with for example by Al
2O
3Or silica (SiO
2), silicon nitride (Si
3N
4) the stagnant phase-plate 43 that waits lower loss material to constitute.The phase-plate 43 that should stagnate is to shorten for the wavelength that shortens microwave makes its wavelength in said waveguide.In this form of implementation, constituted the radial slit antenna by above-mentioned antenna body 41, flat plane antenna member 42, the phase-plate 43 that stagnates.
As above the antenna part 4 of Gou Chenging is to be installed on the container handling 1 with the situation that cover plate 13 closely contacts to serve as a contrast not shown seal in the middle of its said flat plane antenna member 42.And this antenna part 4 links to each other with the microwave generating mechanism 45 of outside via coaxial waveguide 44, and for example supplying with, frequency is the microwave of 2.45GHz or 8.3GHz.At this moment, the waveguide 44A of the outside of coaxial waveguide 44 links to each other with antenna body 41, and center conductor 44B links to each other with flat plane antenna member 42 via formed peristome on the stagnant phase-plate 43.
Said flat plane antenna member 42 is that copper coin about 1mm constitutes by thickness for example, and as shown in Figure 3 and Figure 4, is formed with a plurality of slits 46 that for example are used for taking place circularly polarized wave.This slit 46 is that to be a pair of slit 46A, the 46B that the T font arranges with the small distance very of being separated by be one group, along the circumferential direction for example is concentric circles or vortex shape and forms.Because slit 46A and slit 46B roughly to arrange perpendicularly each other, therefore, can launch the circularly polarized wave that contains two kinds of perpendicular polarized wave compositions as mentioned above.
At this moment, with the central authorities of flat plane antenna member 42 is that to be slit 46A, 46B that concentric circles or vortex shape arrange be that the wavelength that stagnates after phase-plate 43 compressions with the quilt with microwave is spaced accordingly at the center, therefore, microwave will roughly become plane wave to emit from flat plane antenna member 42.Specifically, in this example, with the size of the long L1 of slit of each slit 46A, 46B for example be set at plasma between 1/2 and flat plane antenna member 42 of the wavelength of the microwave of waveguide one side of flat plane antenna member 42 produce space one side microwave wavelength 1/2 between.Promptly, its size is set at flat plane antenna member 42 coaxial waveguide 44 1 sides microwave wavelength below 1/2 and produce greater than the plasma of flat plane antenna member 42 space (in the container handling a 1) side microwave wavelength 1/2, make microwave can pass slit 46 and enter the plasma space and can not return coaxial waveguide 44 1 sides from the plasma space.In addition, for being the slit 46 that concentric circles is arranged, the interval L2 between the slit 46 of the slit 46 of interior ring and outer shroud is set at coaxial waveguide 44 1 sides for example microwave wavelength 1/2.
In addition, have blast pipe 14 to be attached thereto in the bottom of container handling 1, this blast pipe 14 is connected on the vacuum pump as vacuum exhaust mechanism via pressure adjustment part 51, can will be evacuated down to set pressure in the container handling 1.
Below, just an example of the film build method of implementing with this device of the present invention describes.At first, the wafer W that will be for example be formed with the substrate of aluminum wiring as the surface by not shown gate valve is sent into and is placed on the mounting table 11.Next, the inside of container handling 1 is evacuated to set pressure, and via the 1st gas feed path 23 to the 1st gas supply part 2 with set flow for example 300sccm supply with plasma gas, for example Ar gas, via the 2nd gas feed path 33 with set flow, for example 150sccm to the 2nd gas supply part 3 base feed gases, for example C5F8 as the unstrpped gas supply unit.Afterwards, make and keep for example operational pressure 13.3Pa in the container handling 1, the surface temperature of mounting table 11 is set at 350 ℃.
On the other hand, when supplying with the high frequency (microwave) of 2.45GHz, 2000W by the microwave generating mechanism, this microwave will transmit in coaxial waveguide 44 with TM pattern or TE pattern or TE pattern and arrive flat plane antenna member 42 places of antenna part 4, via the inner conductor 44B of coaxial waveguide from the centre of flat plane antenna member 42 towards the process that transmit radially the neighboring area, microwave from slit to 46A, 46B via the processing spatial emission of cover plate the 13, the 1st gas supply part 2 towards the below of this gas supply part 2.Here, cover plate 13 and the 1st gas supply part 2 are by the transparent material of microwave, for example Al
2O
3Constitute, therefore, can play the effect of microwave penetration window, microwave can see through expeditiously.
At this moment, because slit to 46A, 46B such as precedingly explanatorily arrange, therefore, can be launched circularly polarized wave from the whole face of flat plane antenna member 42 equably, make that the electric field density in processing space of its below is even.Under the effect of this microwave energy, can motivate high density and plasma uniformly in the whole regional extent in the processing space of broad.This plasma flows into via the peristome 34 of the 2nd gas supply part 3 in the processing space of below of these gas supply parts 3, make from this gas supply part 3 to the C5F8 gas activation of this processings space supply, be plasma and form active matter.The plasma of the C5F8 gas of Chan Shenging like this, the value of its electron temperature are low for example to be 1.2eV.In addition, because operational pressure is low, thereby electron density is 10
12Individual/cm
3Level.
Here said electron temperature defines with mean square velocity, and its mensuration mode can be arbitrarily.And measuring point is in gas supply hole 31 and the space between the wafer W as the gas supply port of 2nd gas supply part 3 suitable with the supply unit of unstrpped gas, do not comprise near the wall of container handling 1 or mounting table 11 around bottom etc. locate.In addition, so-called define, be meant that the relation between the electron temperature and electron number is Mike's Si Boltzmann as shown in Figure 5 to distribute, the electron temperature when its mean value is got in addition again behind each electron number square with mean square velocity.P1～P3 is respectively maximum establishment speed, mean square velocity, effective speed among Fig. 5.
Why obtaining the low and electron-dense isoionic reason of electron temperature does not as mentioned above still understand, but can consider whether be because the microwave that formed slit 46 emits from the circumferencial direction of flat plane antenna member 42 when making the unstrpped gas plasma, electronics improves with respect to the followability of electric field.That is to say, whether can infer its main cause like this, promptly, follow the occasion of electric field motion making electronics, then must strengthen electric field if followability is bad, even but if followability well then do not strengthen the electric field raw material also can plasma, and the wall of breaking away from electric field and container handling 1 bumps against and the electronics of disappearance also can lack.
On the other hand, though the active matter that is transported on the wafer W will be as the CF film and film forming, but under the effect of plasma attraction, attracted to the Ar ion on the wafer W this moment with bias voltage, the CF film of corner part that will be formed at the Wiring pattern on wafer W surface because of sputter effect meeting reams, when enlarging at interval, the CF film is from the bottom film forming of the groove of Wiring pattern, and the CF film is filled in the recess.The wafer W that the CF film as above forms is sent from container handling 1 via not shown gate valve.
According to above-mentioned form of implementation, be that plasma low by electron temperature and that density is high forms dielectric film, therefore, also can learn by the embodiment of back, can obtain the CF film that dielectric constant is low and leakage current is little thereby electric property is good.Its reason is, can not make the C5F8 excessive decomposition of using as unstrpped gas and cause each loop chain all to disconnect, and CF chain appropriateness is disconnected, that is to say, a part of loop chain is disconnected, and can link to each other between the C5F8 that disconnects and obtain the very long stereochemical structure of CF chain.That is to say, raw material is formed utilized and obtained having the CF film of original strand that therefore, this CF film is because of film strength height, stress tolerance high mechanical performance excellence, and chemical property such as resistance to water is also very excellent.Owing to can guarantee very high electron density, therefore, needn't worry that film forming speed is low and can't in the batch process system, be applied.
In addition, as the unstrpped gas of CF film, being not limited to C5F8 gas, for example can also be C3F6 gas, C4F6 gas or C4F8 gas etc.In addition, the dielectric film of institute's film forming is not limited to the CF film among the present invention, can also be as the SiOF film of the compound of silicon, oxygen and fluorine etc., for other dielectric film raw material is formed and be obtained utilizing and having original chain structure, obtain excellent dielectric films such as electric property.
In addition, formed slit 46 is not limited to top illustrated slit 46A, the 46B that the T font is arranged that roughly be on the flat plane antenna member 42, and slit designs can be become make microwave is not with circularly polarized wave but with the slit of linearly polarized wave emission yet.In addition, the present invention also comprises such scheme, promptly, for utilizing electron cyclotron resonace to encourage isoionic ECR type plasma treatment appts, parallel plate-type plasma treatment appts or inductance coupling high type plasma treatment appts, by taking measures aspect the formation of process conditions and device, generating electron temperature and be the following and electron density of 3eV is 5 * 10
11Individual/cm
3Above plasma and form dielectric film.
(embodiment 1)
Use the plasma film forming device of Fig. 1, under different unstrpped gas kinds and process conditions, form the CF film, detect its dielectric constant and leakage current, obtained result shown in Figure 6 for each CF film.In Fig. 6, the longitudinal axis is the value of the leakage current when dielectric film is applied the electric field of 1MV/cm, and transverse axis is the dielectric constant of dielectric film.For each unstrpped gas, the inventor has gathered lot of data, and the variation tendency of data is identical, therefore, representative data only is shown among Fig. 6.
Data when is unstrpped gas use C3F6 gas, the data when △ is to use C4F6 gas, the data when ■ is to use C4F8 gas, the data when ◇ is to use C5F8 gas.As corresponding with these data, for obtaining the process conditions that the CF film is set, make operational pressure 6.65～19.95Pa (50～150mTorr), microwave power changes between 40～105mm in the distance of flow between the lower surface of 50～200sccm, wafer W and the 2nd gas supply part 3 of 100～500sccm, unstrpped gas at the flow of 1500～3000W, argon gas, is the following plasma of 2eV thereby generated electron temperature.When using C3F6 gas or C4F8 gas, also want hydrogen supply.
About the mensuration of electron temperature, be under the same conditions supply port to the space between the wafer from unstrpped gas to be measured with Langmuir probe in advance.The electron temperature that defines with mean square velocity is between 1.1eV～2.0eV.In addition, (50～150mTorr) these lower pressure, therefore, electron density is 10 because operational pressure is set at 6.65～19.95Pa
12Individual/cm
3Level, this point are measured by Langmuir probe and are obtained confirming.When under a certain process conditions, using such as unstrpped gas film forming such as C3F6 gases, the method of asking for the value of electron temperature under these process conditions and electron density is, under identical process conditions, change unstrpped gas and use argon gas to produce plasma, this plasma is measured electron temperature and electron density with Langmuir probe.That is to say, with regard to the mensuration of electron temperature and electron density, be to use argon gas to estimate.Its reason is, is that gas can produce corrosion to Langmuir probe though use CF, as electron temperature and electron density, even it is also roughly the same to change gaseous species, therefore, can not go wrong as evaluation method.
As an example, enumerate with dielectric constant is the concrete numerical value of the corresponding process conditions of data of 1.9～2.1 3 ◇, its operational pressure is that 13.3P (100mTorr), microwave power are that the flow of 2000W, argon gas is that the flow of 300sccm, unstrpped gas is that distance between the lower surface of 100sccm, wafer W and flat plane antenna member is 50mm, and electron temperature is 1.1eV.In addition, the value representation of data is the mean value of 3 data on the wafer.
On the other hand, zero expression be the data of unstrpped gas when using C5F8 gas, be the ECR plasma apparatus that film formation device uses aforementioned patent document 1 to be put down in writing, the generation electron temperature is that the plasma of 5eV～6eV obtains the CF film, afterwards the data that this CF film is detected.
Make it become excellent interlayer dielectric, require that its dielectric constant is low, leakage current is little, the inventor is with the dielectric constant below 2.2,1.0E-08 (1 * 10
-8) A/cm
2Following leakage current is as target.By result shown in Figure 6 as can be known, if electron temperature is the value of the higher 5eV of surpassing, then the dielectric constant of CF film will more than 2.5 and leakage current also will be 1.0E-07 (1 * 10
-7) A/cm
2There is gap in the value that this is bigger with desired value, and if electron temperature is below the 2eV, then or dielectric constant reduces or leakage current reduces, also or the two all reduce, close to desired value generally.
By these data as can be known, even electron temperature greater than 2eV, as long as for example be 3eV to the maximum, is then compared the close data in lower left that can obtain to the curve of Fig. 6 with the data of 5eV, that is, can obtain the effect that dielectric constant reduces, leakage current reduces.Therefore, making electron temperature is can suppress the unstrpped gas excessive decomposition below the 3eV to obtain original molecular structure this point and obtained proof.For example use the occasion of C5F8 at raw material, quite close with desired value, can make such deduction, that is, the CF chain in the molecule of each C5F8 is cut off by appropriateness, links to each other between the cut C5F8 molecule and has formed the backbone of CF, therefore, make the dielectric constant of dielectric film low, leakage current is little.And, can think that if electron temperature is this higher value of 5eV, C5F8 is with incoherent and can't obtain original chain structure with respect to this.
About electron density, do not take less than 5 * 10
11Individual/cm
3The time data, and existing ECR etc. device just can access low electron temperature as long as improve pressure when adopting common using method, but electron density will reduce this moment, therefore, in the present invention, in order to distinguish and electron density to be stipulated with this gimmick.That is, on experience, obtain sufficiently high film forming speed in order to make gas separations, as long as make electron density reach 5 * 10
11Individual/cm
3Below just do not have any problem, this point is grasped, and the present invention carries out operation with lower electron temperature on the basis that with this condition is prerequisite.
(embodiment 2)
Secondly, use the plasma film forming device of Fig. 1, the pressure (operational pressure) that unstrpped gas uses C5F8 also will handle atmosphere is set at 6.65Pa (50mTorr), 13.3Pa (100mTorr), 19.95Pa (150mTorr), 4 kinds of pressure of 26.6Pa (200mTorr), under various pressure, change process conditions and after forming the CF film, the dielectric constant and the leakage current of each CF film detected.Its result as shown in Figure 7.Among Fig. 7, the longitudinal axis is the value of the leakage current when dielectric film is applied the electric field of 1MV/cm, and transverse axis is the dielectric constant of dielectric film.So-called process conditions, distance (with reference to Fig. 1), microwave power, argon flow amount, raw material gas flow and chip temperature etc. between the 2nd gas supply part 3 and the wafer are arranged, in this experiment, do not change operational pressure and above-mentioned process conditions are carried out different combinations to form the CF film.
As shown in Figure 7, along with the change of process conditions, the value of leakage current and dielectric constant has very big beat.When comparing, the CF film that CF film that forms when for example pressure being made as 13.3Pa and pressure form when being made as 26.6Pa finds, the former CF film both occurred having compared with the data of latter CF film, the data of relation in contrast also occurred having in the relation of all excellent (little) aspect leakage current and the dielectric constant.With regard to the CF film, leakage current is more little and dielectric constant is more little, and the performance of dielectric film is good more, and therefore, as the data among Fig. 7, the performance by the lower left dielectric film of curve is good more more.
Here, also the result of Fig. 7 is analyzed in conjunction with the result of the experimental example 1 of front, the process conditions that comprise operational pressure by change, the value of leakage current and the value of dielectric constant are all changed, and, even in the certain occasion of operational pressure, change other process conditions and still can make data discrete, but the mode of data discrete can change along with the size of operational pressure.That is to say, can make data close, but it changes near the difference of mode meeting owing to the size of operational pressure to the lower left of Fig. 7 by the adjusting process condition.In operational pressure is occasion below the 19.95Pa, can obtain dielectric constant near 2.2 and leakage current approach 1.0E-08 (1 * 10
-8) A/cm
2Value, and be the occasion of 26.6Pa in operational pressure, dielectric constant is reached below 2.3.
Below, variation tendency to process conditions and leakage current and dielectric constant describes, though we can say to exist and diminish along with chip temperature reduces leakage current, along with dwindling the trend that dielectric constant diminishes as the 2nd gas supply part 3 of gas tip and the distance between the wafer, but, do fine adjustment to the process conditions that comprise gas flow in order to make data close to the lower left of Fig. 7.As can be known from the above results, in isoionic electron temperature is below the 3eV, preferably below the 2eV, and electron density is the occasion of carrying out operation under the above condition of 5 * 1011/cm3, making operational pressure is below the 19.95Pa (150mTorr), and the dielectric film that has superperformance for acquisition is the way that should take.Lower limit for operational pressure is not particularly limited, if can realize lower operational pressure by using vacuum exhaust pump capacious, then as long as carry out operation under this pressure.In addition, in Fig. 7, with regard to dielectric constant be below 2.3 and leakage current be 5.0E-8 (with regard to the following data of 5 * 10-8) A/cm2, by the result of Fig. 6 of front as can be known its electron temperature certainly below 2eV.
Claims (9)
1. a plasma film forming method on the substrate on the placement section in being placed on airtight container handling, makes the C5F8 gas activation form dielectric film by plasma, it is characterized in that,
Electron temperature in the space between the supply port of said C5F8 gas and the surface of said substrate is below the 2eV, and electron density is 5 * 10
11Individual/cm
3More than;
The pressure of handling atmosphere is below 19.95Pa;
The dielectric film that forms on said substrate is that dielectric constant is below 2.3, and leakage current is 5 * 10
-8A/cm
2Following fluoridize carbon film.
2. the plasma film forming method of putting down in writing as claim 1, it is characterized in that, with microwave via waveguide to the flat plane antenna member channeling conduct that is provided with in opposite directions with placement section, launch said microwave from a plurality of slits that on this flat plane antenna member, along the circumferential direction form, utilize the energy of this microwave to make said C5F8 gas plasmaization.
3. the plasma film forming method of putting down in writing as claim 2, it is characterized in that, the length dimension of said slit be set in said flat plane antenna member said waveguide one side microwave wavelength 1/2, and the plasma of said flat plane antenna member produce space one side microwave wavelength 1/2 between.
4. the plasma film forming method of being put down in writing as claim 2 or 3 is characterized in that, said a plurality of slits are that the center is concentric circles or the vortex shape is arranged with the central authorities of said flat plane antenna member.
5. the plasma film forming method of being put down in writing as claim 2 or 3 is characterized in that, microwave is launched as circularly polarized wave or linearly polarized wave from said flat plane antenna member.
6. a plasma film forming device is characterized in that, comprising:
Airtight container handling, inside are provided with the placement section of placing substrate;
The C5F8 gas supply part is supplied with the C5F8 gas that is used for forming dielectric film on the said substrate in said container handling;
Microwave generator produces the microwave that is used for making said C5F8 gas plasmaization;
Waveguide will be directed in the said container handling by the microwave that this microwave generating mechanism produces; And,
The flat plane antenna member is connected on this waveguide and with said placement section and is provided with in opposite directions, along the circumferential direction is formed with a plurality of slits;
And, making the C5F8 gas activation by plasma, the electron temperature in the space between the surface of the supply port of said C5F8 gas and said substrate is below the 2eV, electron density is 5 * 10
11Individual/cm
3More than, the pressure of handling atmosphere carries out the film forming processing to the substrate that is placed on the said placement section under the situation below the 19.95Pa, and forming dielectric constant is below 2.3 and leakage current is 5 * 10
-8A/cm
2Following fluorocarbon dielectric film.
7. the plasma film forming device of putting down in writing as claim 6, it is characterized in that, the length dimension of said slit be set in said flat plane antenna member said waveguide one side microwave wavelength 1/2, and the plasma of said flat plane antenna member produce space one side microwave wavelength 1/2 between.
8. the plasma film forming device of being put down in writing as claim 6 or 7 is characterized in that, said a plurality of slits are that the center is concentric circles or the vortex shape is arranged with the central authorities of said flat plane antenna member.
9. the plasma film forming device of being put down in writing as claim 6 or 7 is characterized in that, microwave is launched as circularly polarized wave or linearly polarized wave from said flat plane antenna member.
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| JP2003083292 | 2003-03-25 | ||
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