CN100523292C - Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof - Google Patents
Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof Download PDFInfo
- Publication number
- CN100523292C CN100523292C CNB2007100185192A CN200710018519A CN100523292C CN 100523292 C CN100523292 C CN 100523292C CN B2007100185192 A CNB2007100185192 A CN B2007100185192A CN 200710018519 A CN200710018519 A CN 200710018519A CN 100523292 C CN100523292 C CN 100523292C
- Authority
- CN
- China
- Prior art keywords
- gas
- amorphous carbon
- substrate
- fluoridation
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses an electron cyclotron resonance plasma chemical vapor deposition fluorinated amorphous carbon film approach and a film structure. The approach is to deposite the fluorinated amorphous carbon film on a plurality of substrates inside a deposition chamber by taking a carbon-hydrogen gas as well as a luorocarbon source gas as precursor gases, absorb the microwave energy and decomposite the precursor gases by utilizing the electron cyclotron resonance effect, and form the fluorinated amorphous carbon film with low dielectric constant and good thermal stability. The specific process is that the substrate is placed in a process room after being thoroughly washed; the process room is vacuum-pumping; a mix gas enters into the process room; the fluorinated amorphous carbon film is deposited on the sunstrate; the process room is purified. Wherein, before or after the deposition of the fluorinated amorphous carbon film, a deposition silicon carbide film adhesion thin-layer and a silicon nitride film coating thin-layer can be chosen to form a multi-layer low dielectric constant dielectric structure. The invention has the advantages of the good thermal stability, low dielectric constant and high deposition speed; the invention is capable of being used in the IC interconnect or the fabrication of some optical device.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly the method for plasma chemistry vapor depositing fluoridation amorphous carbon membrane is used to make unicircuit low-k connected medium layer.
Background technology
Always according to the Moore's Law high speed development, the chip features size constantly reduces integrated circuit technique in the past few decades, and the quantity of device also constantly increases in the unit surface.Along with semi-conductor industry enters the deep-submicron epoch, interconnection problems has become one of principal element that influences the circuit performance raising.The semiconductor technology evolves blueprint of american semiconductor TIA revision in 1997 shows, will be decreased to 70 nanometers to characteristic dimension in 2009, and the interconnection of ultra-large integrated (VLSI) electric circuit metal will reach 9 layers.Reduction along with the VLSI characteristic dimension, the depth-width ratio of metal connecting line increases, stray capacitance increases sharply between line, and the rising of the interconnection number of plies also can cause the increase of interlayer stray capacitance, and interconnect delay has surpassed the biggest obstacle that gate delay becomes restriction circuit working speed.In addition, electric capacity increases and causes the enhancing of crosstalking between line between the chip center line, and the power dissipation that is caused by stray capacitance also increases thereupon, has seriously limited the further raising of performance of integrated circuits.Copper enchasing technology and low-k, promptly to be used in combination new interconnection process less than 3.9 material be the effective measure that address the above problem to dielectric constant values k.Adopt advanced low-k materials as between the interconnection line line, inter-level dielectric can effectively reduce interconnection capacitance.Adopt the littler copper Cu of resistivity to replace aluminium Al as interconnect material, because the resistivity of Cu is lower approximately by 35% than Al, thereby can reduce interconnection line resistance effectively, and the low k multilayer interconnection technology of Cu/ has become the inexorable trend of integrated circuit interconnection technical development.
Fluoride amorphous carbon (a-C:F) film is to be hopeful one of advanced low-k materials that is applied to unicircuit, and its specific inductivity is about 2.1～2.9, uses carbon fluorine such as CF more
4With hydrocarbon as CH
4Gas is prepared by chemical vapour deposition CVD method.In chemical vapor deposition process, the reactant gases and the carrier gas of given composition and flow are introduced in the reaction chamber by air-path control system.Gas molecule transports to substrate, and is attracted to substrate surface, through behind surface transport and the film forming chemical reaction on substrate deposition film, for example fluoridation amorphous carbon membrane.The reactant gases by product then also finally is drawn out of reaction chamber by band from substrate surface.The motivating force of film forming chemical reaction can be supplied with by several method usually, for example heat, light, radio frequency, catalyzer or plasma body.Conventional chemical vapour deposition system generally includes gas source, gas circuit, gas flow controller, reaction chamber, temperature sensor, vacuum measuring device, power source, substrate bias, heating and swivel arrangement etc.The chemical vapour deposition of electron cyclotron resonace ecr plasma is a kind of Special Circumstances of CVD technology.When equaling electron gyro-frequency, the microwave frequency of input resonates, microwave energy is coupled to electronics, the electron ionization neutral gas molecule that obtains energy forms plasma discharge, and makes the high reactivity composition in the plasma body form thin-film deposition at substrate surface.When microwave frequency is 2.45 * 10
9During hertz, the magnetic induction density B that reaches electron cyclotron resonace is 8.75 * 10
-2Tesla.Ecr plasma has, and operating air pressure is low, density is high, ionization level is high, big area is even, but the simple steady running of processing unit and parameter are easy to advantages such as control, can realize the surface treatment of efficient pollution-free, in comprising integrated circuit (IC) manufacturing process such as the thin-film deposition of low dielectric constant material film, plasma etching, huge application potential be arranged.But because there are the contradiction of compromise in the specific inductivity of fluoridation amorphous carbon membrane and thermostability, poor heat stability when promptly specific inductivity is low can't satisfy the requirement of unicircuit to stability of material; And its specific inductivity is higher during Heat stability is good, can't embody the advantage of advanced low-k materials.Simultaneously, when preparing fluoridation amorphous carbon membrane with the Ecr plasma chemical vapour deposition, general deposition rate is on the low side, can't satisfy the needs of unicircuit scale production.So far the method that does not also have sophisticated Ecr plasma chemistry vapor depositing fluoridation amorphous carbon membrane.
The content of invention
The method that the purpose of this invention is to provide a kind of plasma chemistry vapor depositing fluoridation amorphous carbon membrane, to solve the contradiction of above-mentioned specific inductivity and thermostability compromise, under the prerequisite that guarantees thermostability, prepare the lower fluoridation amorphous carbon membrane of specific inductivity with higher growth velocity.
The know-why that realizes the object of the invention is: use carbon fluorine and hydrocarbon as source gas deposit fluoridation amorphous carbon membrane on the substrate in deposition chamber, utilize the electron cyclotron resonace effect to absorb microwave energy and decompose carbon fluorine and hydrocarbon source gas, and on substrate, form amorphous carbon fluoride film.Wherein, before and after the deposit fluoridation amorphous carbon membrane, can in same equipment, select deposit silicon carbide film adhesion thin layer and silicon nitride film to cover thin layer and form one or more layers medium with low dielectric constant structure.Concrete scheme is as follows:
To be placed on chamber after the substrate cleaning, and chamber is vacuumized;
To feed chamber after hydrocarbon source gas and the carbon fluorine source mixed gases;
The microwave source energy that utilizes the electron cyclotron resonace effect to absorb carries out the ionization decomposition to mixed hydrocarbon source gas and carbon fluorine source gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, by following processing condition deposit fluoridation amorphous carbon membrane on substrate:
Process chamber pressure: 0.1Pa～5Pa;
Microwave power: 600W～2000W;
Deposition temperature: 30 ℃～300 ℃;
The flow of hydrocarbon gas: 5～10sccm;
The flow of carbon fluorine gas: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the fluoridation amorphous carbon membrane of 600 dusts to 2200 dusts.
Technical scheme 2
1. vacuumize after being placed on chamber after the Si substrate being cleaned;
2. on the Si substrate, press following condition growth fluoridation amorphous carbon membrane:
Process chamber pressure: 0.1Pa～5Pa;
Microwave power: 1000W～2000W;
Deposition temperature: 200 ℃～300 ℃;
C
2H
2Flow: 5～10sccm;
C
4F
8Flow: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the fluoridation amorphous carbon membrane of 800 dusts to 2200 dusts.
3. on the a-C:F layer, press following condition growth SiN film:
Process chamber pressure: 1Pa;
Microwave power: 1200W;
Deposition temperature: 50 ℃;
SiH
4The flow of source gas: 5sccm;
N
2The flow of gas: 10sccm;
Ar gas flow: 100sccm;
Deposition time: 10 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the SiN film of 100 dusts.
Technical scheme 3
1. vacuumize after being placed on chamber after the Si substrate being cleaned;
2. on the Si substrate, press following condition deposit carborundum films:
Process chamber pressure: 1Pa;
Chamber base vacuum: 10
-5Pa;
Microwave power: 1500W;
Deposition temperature: 400 ℃;
The flow of Ar gas: 100sccm;
CH
4Flow: 50sccm;
SiH
4Flow: 5sccm;
Deposition time: 10 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the silicon carbide film layer of about 100 dusts;
3. on silicon carbide film layer, press following condition growth fluoridation amorphous carbon membrane:
Process chamber pressure: 0.1Pa～5Pa;
Microwave power: 1000W～2000W;
Deposition temperature: 200 ℃～300 ℃;
C
2H
2Flow: 5～10sccm;
C
4F
8Flow: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the fluoridation amorphous carbon membrane of 800 dusts to 2200 dusts.
4. on the fluorinated amorphous carbon-coating, press following condition growth SiN film:
Process chamber pressure: 1Pa;
Microwave power: 1200W;
Deposition temperature: 50 ℃;
SiH
4The flow of source gas: 5sccm;
N
2The flow of gas: 10sccm;
Ar gas flow: 100sccm;
Deposition time: 10 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the SiN film of about 100 dusts;
Obtain the Si/SiC/a-C:F/SiN structure.
The fluoride amorphous carbon rete structure of making of technical solution of the present invention 2 comprises substrate, fluoride amorphous carbon, wherein is provided with one deck silicon nitride on fluoride amorphous carbon.
The fluoride amorphous carbon rete structure of making of technical solution of the present invention 3 comprises substrate, fluoride amorphous carbon, wherein is provided with one deck SiC rete between Si substrate and fluorinated amorphous carbon-coating, is provided with one deck silicon nitride on fluoride amorphous carbon.
The present invention has following advantage:
The present invention can obtain the amorphous carbon fluoride film of high commissure structure, and effectively improve film heat stability owing to having adopted the hydrocarbon of many carbon and carbon fluorine macromole gas as precursor gas; Simultaneously since precursor gas F/C than higher, so the specific inductivity of the amorphous carbon fluoride film of deposit is lower; In addition owing to adopt adhesion layer, low dielectric constant films layer and tectal dielectric multi-layer optical thin film structure also can effectively improve the thermostability of low dielectric constant films; Compared with prior art, the method for deposit low dielectric constant films of the present invention also has the deposition rate height, technological temperature is low, area is big, the advantage of homogeneity and good reproducibility.
Description of drawings
Fig. 1 is the ECRCVD device structure synoptic diagram that the present invention is used to form fluoridation amorphous carbon membrane;
Fig. 2 is the gas circuit structure synoptic diagram of the ECRCVD equipment that uses of the present invention;
Fig. 3 is the process flow sheet that the present invention prepares the individual layer fluoridation amorphous carbon membrane;
Fig. 4 is the process flow sheet that the present invention prepares two layer medium layer structure Si/a-C:F/SiN;
Fig. 5 is the process flow sheet that the present invention prepares three layers of medium layer structure Si/SiC/a-C:F/SiN;
Fig. 6 is the structural representation of the two layer medium layer Si/a-C:F/SiN that prepare of the present invention;
Fig. 7 is the structural representation of three layers of medium layer Si/SiC/a-C:F/SiN preparing of the present invention;
Fig. 8 is the change curve of the deposition rate of amorphous carbon fluoride film of the present invention with processing condition;
Fig. 9 is the change curve of the thermostability of amorphous carbon fluoride film of the present invention with processing condition;
Figure 10 is the change curve of the specific inductivity of amorphous carbon fluoride film of the present invention with processing condition.
Embodiment
See figures.1.and.2, the microwave ECR CVD equipment that deposit amorphous carbon fluoride film of the present invention uses is made up of microwave power source and transmission system 21, ecr plasma source 22, chamber 23, air-channel system 24, vacuum system 25, microcomputer control system 26.
Microwave power source and transmission system 21 provide stable microwave energy for the ecr plasma source, and its frequency is 2.45GHz, and power is at 0～3KW, and is adjustable controlled.It is made of microwave power source 201, hydrokineter 202, water load 203, resistance dynamometer 204, directional coupler 205, load tuner 206.Microwave power source adopts WY50002-1C type continuous microwave power source.BJ-26 rectangular waveguide 207 is adopted in microwave transmission, by three pin tuners 206 and short-circuit plunger 208 regulating load coupling and reflective powers.The microwave transmission loop comprises that the coaxial waveguide that 209, one inner wires of a waveguide-coaxial converter and outer conductor constitute is extended to tapered tube 210 and coaxial-type resonator 211 with 45.
2.45GHz microwave be incorporated near the resonator opening surface Al through the transmission loop
2O
3On the ceramic window 220.This ceramic window lower surface has an O type rubber seal 221, the vacuum-sealing of double as discharge chamber.The ceramic window upper surface has distributed permanent magnet steel system, and this system is made up of magnetism-free stainless steel disk 222, soft iron shielding slab 223 and Nd-Fe-B permanent magnetic steel 224.Permanent magnetic steel 224 is embedded on the magnetism-free stainless steel on the disk 222, is covered by soft iron shielding slab 223 on it.Microwave is transported to the center by the outer rim of ceramic window 220, thereby forms uniform surface-duided wave electric field distribution on ceramic window 220 surfaces of discharge chamber one side, under the effect in this electric field and magnetic field, has formed even heavy caliber ecr plasma in the discharge chamber.
Air-channel system 24 is finished input, measurement and the control of the required working gas of processing unit, reactant gases and purge gas such as nitrogen.Air-channel system is established 6 tunnel gas circuits altogether, first via gas circuit partly is made up of reacting gas source 3011, reducing valve 302, pressure display unit 310, magnetic valve 303, magnetic valve 305, magnetic valve 306, magnetic valve 308 and magnetic valve 311, mass flow controller 304, mixed gas tank 307, purge gas source 309 and stainless steel pipeline etc., as shown in Figure 2.Before the thin-film deposition, reactant gases in the source of the gas 3011 is behind decompress(ion) valve 302 decompress(ion)s, enter in the mixed gas tank 307 by mass flowmeter 304 controls, the pressure of gas circuit node is read by pressure display unit 310, this moment, magnetic valve 303 and magnetic valve 305 were opened, and magnetic valve 306, magnetic valve 311 and magnetic valve 308 are closed.Opening magnetic valve 308 during deposit gets final product.Source of the gas 309 is a purge gas source, opens magnetic valve 311 and closes other source of the gas and can clean gas circuit.Other five road source of the gas and corresponding gas circuit thereof are identical with above-mentioned first via source of the gas 3011 and corresponding gas circuit thereof, representing the second road source of the gas 3012, Third Road source of the gas 3013, the four road source of the gas 3014, the five road source of the gas 3015 and the six road source of the gas 3016, six tunnel gas circuits respectively for the simplicity of illustration with dashed lines is connected in parallel.
With reference to Fig. 3, the present invention utilizes the technological process of aforesaid device deposit individual layer fluoridation amorphous carbon membrane as follows:
The first step, substrate cleans and puts into chamber.
Quartz plate is used acetone ultrasonic cleaning 20 minutes; Comprised 6 circulations in 5 minutes with washed with de-ionized water; Rotation under the nitrogen atmosphere protection dries to be handled, and promptly 80 seconds washed with de-ionized water are put into chamber after rotation in 120 seconds dries.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
In the 3rd step, feed mixed gas.
Close the magnetic valve 308 that mixes gas tank and chamber junction, open hydrocarbon source of the gas and carbon fluorine source gas respectively and lead to and mix magnetic valve and the under meter in the gas tank gas circuit branch and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix mix more than 5 seconds in the gas tank after, this carbon fluorine gas is selected C for use
4F
8, gas flow is 50sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 5sccm, process chamber pressure is 0.1Pa, opens magnetic valve 308, and mixed gas is fed in chamber 23.
The 4th step, deposit amorphous carbon fluoride film on substrate.
1. control sample table speed of rotation is 60 rpms, opens rotation control, makes the substrate uniform rotation;
2. it is 600W that microwave power is set, deposition temperature is 30 ℃, open microwave source, microwave energy is fed in the ecr plasma source, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization is transported to substrate surface;
3. but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 600 dusts deposit in 1 minute discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 2
With reference to Fig. 3, the present invention utilizes the technological process of aforesaid device deposit individual layer fluoridation amorphous carbon membrane as follows:
Chamber is cleaned and put into to the first step to substrate.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries.Clean acquisition surface, back and put into chamber by the saturated clean silicon surface of H key.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
In the 3rd step, feed mixed gas.
Close the magnetic valve 308 that mixes gas tank and chamber junction, open hydrocarbon source of the gas and carbon fluorine source gas respectively and lead to and mix magnetic valve and the under meter in the gas tank gas circuit branch and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix mix more than 5 seconds in the gas tank after, this carbon fluorine gas is selected C for use
4F
8, gas flow is 200sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 10sccm, process chamber pressure is 5Pa.Open magnetic valve 308, mixed gas is fed in chamber 23.
The 4th step, deposit amorphous carbon fluoride film on substrate.
1. control sample table speed of rotation is 60 rpms, opens rotation control, makes the substrate uniform rotation;
2. setting microwave power is 2000W, deposition temperature is 300 ℃, open microwave source, microwave energy is fed in the ecr plasma source, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization is transported to substrate surface;
3. but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is about 2200 dusts deposit in 1 minute discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber are purified.
Embodiment 3
With reference to Fig. 3, the present invention utilizes the technological process of aforesaid device deposit individual layer fluoridation amorphous carbon membrane as follows:
Chamber is cleaned and put into to the first step to substrate.
The NaCl sheet was cleaned 20 minutes with acetone tide sound; Rotation under the nitrogen atmosphere protection is put into chamber after drying in 120 seconds and handling.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
In the 3rd step, feed mixed gas.
Close the magnetic valve 308 that mixes gas tank and chamber junction, open hydrocarbon source of the gas and carbon fluorine source gas respectively and lead to and mix magnetic valve and the under meter in the gas tank gas circuit branch and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix mix more than 5 seconds in the gas tank after, this carbon fluorine gas is selected C for use
2F
4, gas flow is 100sccm, this hydrocarbon gas is elected CH as
4, gas flow is 8sccm, process chamber pressure is 1Pa.Open magnetic valve 308, in the mixed gas feeding is in chamber 23.
The 4th step, deposit amorphous carbon fluoride film on substrate.
1. control sample table speed of rotation is 60 rpms, opens rotation control, makes the substrate uniform rotation;
2. it is 1500W that microwave power is set, deposition temperature is 200 ℃, open microwave source, microwave energy is fed in the ecr plasma source, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and ionization is decomposed the effect by permanent magnetic field of the active charged particle that produced and be transported to substrate surface;
3. but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is about 1400 dusts deposit in 1 minute discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 4
With reference to Fig. 4, the present invention utilizes the technological process of aforesaid device deposit low-k two layer medium Si/a-C:F/SiN structure as follows:
The first step is cleaned the Si substrate, puts into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
The 3rd step, deposit amorphous carbon fluoride film on the Si substrate.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open hydrocarbon source of the gas and carbon fluorine source gas respectively and lead to and mix magnetic valve and the under meter in the gas tank gas circuit branch and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 50sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 5sccm, process chamber pressure is 0.1Pa;
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 200 ℃, microwave power is 1000W, open rotation control and make the substrate uniform rotation, open microwave source, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 800 dusts deposit in 1 minute discharge time.
The 4th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.Embodiment 5
With reference to Fig. 4, the present invention utilizes the technological process of aforesaid device deposit low-k two layer medium Si/a-C:F/SiN structure as follows:
The first step is cleaned the Si substrate, puts into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
The 3rd step, deposit amorphous carbon fluoride film on the Si substrate.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open carbon fluorine gas and hydrocarbon gas place gas circuit respectively and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 200sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 10sccm, process chamber pressure is 5Pa;
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 300 ℃, microwave power is 2000W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 2200 dusts deposit in 1 minute discharge time.
The 4th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 6
With reference to Fig. 4, the present invention utilizes the technological process of aforesaid device deposit low-k two layer medium Si/a-C:F/SiN structure as follows:
The first step is cleaned the Si substrate, puts into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data about chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
The 3rd step, deposit amorphous carbon fluoride film on the Si substrate.
1. close the magnetic valve that mixes gas tank and chamber junction, open carbon fluorine gas and hydrocarbon gas place gas circuit respectively and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 120sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 6sccm, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 250 ℃, microwave power is 1600W, open rotating control assembly, open microwave source, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization is transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 1500 dusts deposit in 1 minute discharge time.
The 4th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 5th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 7
With reference to Fig. 5, the present invention utilizes the technological process of three layers of medium Si/SiC/a-C:F/SiN of aforesaid device deposit low-k structure as follows:
The first step is cleaned the Si substrate and is put into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
The 3rd step, deposit SiC film on the Si substrate.
1. close the magnetic valve that mixes gas tank and chamber junction, open SiH respectively
4, CH
4With Ar gas place gas circuit and close other gas circuit, make SiH
4, CH
4Flow into to mix in the gas tank and mix more than 5 seconds with the flow of 5sccm, 50sccm and 100sccm respectively with Ar gas and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 400 ℃, microwave power is 1500W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiC carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 4th step, deposit amorphous carbon fluoride film on SiC.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open hydrocarbon source of the gas and carbon fluorine source gas respectively and lead to and mix magnetic valve and the under meter in the gas tank gas circuit branch and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 50sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 5sccm, process chamber pressure is 0.1Pa;
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 200 ℃, microwave power is 1000W, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 800 dusts deposit in 1 minute discharge time.
The 5th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 6th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 8
With reference to Fig. 5, the present invention utilizes the technological process of three layers of medium Si/SiC/a-C:F/SiN of aforesaid device deposit low-k structure as follows:
The first step is cleaned the Si substrate and is put into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5Handkerchief.
The 3rd step, deposit SiC film on the Si substrate.
1. close the magnetic valve that mixes gas tank and chamber junction, open SiH respectively
4, CH
4With Ar gas place gas circuit and close other gas circuit, make SiH
4, CH
4Flow into to mix in the gas tank and mix more than 5 seconds with the flow of 5sccm, 50sccm and 100sccm respectively with Ar gas and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 400 ℃, microwave power is 1500W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiC carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 4th step, deposit amorphous carbon fluoride film on SiC.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open carbon fluorine gas and hydrocarbon gas place gas circuit respectively and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 200sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 10sccm, process chamber pressure is 5Pa;
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 300 ℃, microwave power is 2000W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 2200 dusts deposit in 1 minute discharge time.
The 5th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 6th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
Embodiment 9
With reference to Fig. 5, the present invention utilizes the technological process of three layers of medium Si/SiC/a-C:F/SiN of aforesaid device deposit low-k structure as follows:
The first step is cleaned the Si substrate and is put into chamber.
Silicon chip is immersed the H of 4:1
2SO
4: H
2O
2Solution cleaned 10 minutes, and solution temperature is 90 ℃; Washed with de-ionized water 5 minutes comprises 6 circulations; Silicon chip is immersed the H of 5:1:1
2O:H
2O
2: cleaned 10 minutes in the HCl solution, solution temperature is 70 ℃; Washed with de-ionized water comprised 6 circulations in 5 minutes; Silicon chip is immersed in the HF solution of 50:1 15 to 30 seconds; Washed with de-ionized water comprised 6 circulations in 5 minutes; Rotation under the nitrogen atmosphere protection dries to be handled, promptly 80 seconds washed with de-ionized water, and rotation in 120 seconds dries and puts into chamber.
In second step, chamber vacuumizes.
The applying pressure telltale obtains the data of chamber 23 pressure, and the desired pressure of depositing technics is represented by the total pressure in the chamber 23.Present embodiment is pumped to 1.0 * 10 with chamber 23 base vacuums before deposit
-5The 3rd step of handkerchief, deposit SiC film on the Si substrate.
1. close the magnetic valve that mixes gas tank and chamber junction, open SiH respectively
4, CH
4With Ar gas place gas circuit and close other gas circuit, make SiH
4, CH
4Flow into to mix in the gas tank and mix more than 5 seconds with the flow of 5sccm, 50sccm and 100sccm respectively with Ar gas and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 400 ℃, microwave power is 1500W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiC carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 4th step, deposit amorphous carbon fluoride film on SiC.
1. close the magnetic valve that mixes gas tank and chamber junction, open carbon fluorine gas and hydrocarbon gas place gas circuit respectively and close other gas circuit, carbon fluorine gas and hydrocarbon gas are flowed into simultaneously mix and mix back the feeding in the chamber more than 5 seconds in the gas tank, this carbon fluorine gas is selected C for use
4F
8, gas flow is 120sccm, this hydrocarbon gas is elected C as
2H
2, gas flow is 6sccm, process chamber pressure is 1Pa.
2. setting the sample table speed of rotation is 60 rpms, deposition temperature is 250 ℃, microwave power is 1600W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, the microwave source energy that utilizes the electron cyclotron resonace effect to absorb decomposes mixed carbon fluorine gas and hydrocarbon gas, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface, but controlled microwave goes out the fluoridation amorphous carbon membrane that thickness is 1500 dusts deposit in 1 minute discharge time.
The 5th step, deposit SiN film on fluoridation amorphous carbon membrane.
1. close the magnetic valve 308 that mixes gas tank and chamber junction, open SiH respectively
4Gas, N
2Gas, Ar gas place gas circuit are also closed other gas circuit, make SiH
4, N
2, Ar gas flows into the flow of 5sccm, 10sccm and 100sccm respectively and mixes in the gas tank and mix more than 5 seconds and feed in the chamber, process chamber pressure is 1Pa;
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 6th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
2. setting the sample table speed of rotation and be 60 rpms, deposition temperature and be 50 ℃, microwave power is 1200W, open rotation control and make the substrate uniform rotation, the unlatching microwave source is fed to microwave energy in the ecr plasma source and produces plasma body, but controlled microwave goes out the SiN carbon film that thickness is 100 dusts deposit in 10 seconds discharge time.
The 6th step, the purification process chamber.
After deposit is finished, close source gas, feed nitrogen pipeline and chamber 23 are purified.
With fluoride amorphous carbon membrane structure such as Fig. 6 that present embodiment 4,5,6 is made, wherein, 401 is the Si substrate, and 402 is the fluoride amorphous carbon rete, and 403 is silicon nitride film layer.
With fluoride amorphous carbon membrane structure such as Fig. 7 that present embodiment 4,5,6 is made, 501 is the Si substrate, and 502 is silicon carbide film layer, and 503 is the fluoride amorphous carbon rete, and 504 is silicon nitride film layer.
Effect of the present invention can further specify by following test result:
With reference to Fig. 8, the present invention has tested the deposition rate of fluoridation amorphous carbon membrane under the different technology conditions.Wherein, 601 is the variation relation of deposition rate with total gas flow rate, and 602 is the variation relation of deposition rate with gas flow ratio.As can be seen from Figure 8, the deposition rate of fluoridation amorphous carbon membrane rises with the increase of gas flow ratio and total gas flow rate; Deposition rate maximum value in test specification surpasses 200nm/min, and can further improve by increasing gas flow ratio or total gas flow rate.
With reference to Fig. 9, the present invention has tested the thermostability that adopts low dielectric coefficient medium layer after the different technologies scheme.Wherein, 701 for adopting the low dielectric coefficient medium layer heat stability testing result of technical scheme 1 making, 702 for adopting the low dielectric coefficient medium layer heat stability testing result of technical scheme 2 making, and 703 is the low dielectric coefficient medium layer heat stability testing result who adopts technical scheme 3 to make.As can be seen from Figure 9, all less than 5%, so thermostability is higher than 400 ℃ to each low dielectric coefficient medium layer 400 ℃ of annealing rear film variation in thickness; Adopt the thermal stability of technical scheme 2 and 3 low dielectric coefficient medium layers of making approaching, all a little more than the low dielectric coefficient medium layer that adopts technical scheme 1 to make.
With reference to Figure 10, the present invention has tested the dielectric constant values of the fluoridation amorphous carbon membrane of making under the different technology conditions.As can be seen from Figure 10, the dielectric constant values of fluoridation amorphous carbon membrane reduces and reduces with gas flow ratio, and the specific inductivity minimum value is near 2.1 in test specification, and maximum value is lower than 2.35, belongs to the ultralow dielectric scope.
Claims (7)
1. the method for a plasma chemical vapor deposition fluoridation amorphous carbon membrane comprises following process:
To be placed on chamber after the substrate cleaning;
To feed chamber after complementary hydrocarbon source gas and the carbon fluorine source mixed gases;
Utilize microwave source energy that the electron cyclotron resonace effect absorbs that mixed hydrocarbon source gas and carbon fluorine source gas are carried out ionization and decompose, and the effect by permanent magnetic field of active charged particle that the back produced is decomposed in ionization be transported to substrate surface;
Press following processing condition deposit fluoridation amorphous carbon membrane on substrate:
Process chamber pressure: 0.1Pa～5Pa;
Chamber base vacuum: 10
-5Pa;
Microwave power: 600W～2000W;
Deposition temperature: room temperature～300 ℃ scope;
The flow of complementary hydrocarbon source gas: 5～10sccm;
The flow of carbon fluorine source gas: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the individual layer fluoridation amorphous carbon membrane of 600 dusts to 2200 dusts.
2. the method for deposit fluoridation amorphous carbon membrane according to claim 1 is characterized in that substrate adopts Si or quartz or NaCl sheet.
3. the method for deposit fluoridation amorphous carbon membrane according to claim 1 is characterized in that carbon fluorine source gas is C
4F
8Or C
2F
4, hydrocarbon source gas is C
2H
2Or CH
4
4. the method for a plasma chemical vapor deposition fluoridation amorphous carbon membrane comprises following process:
To be placed on chamber after the cleaning of Si substrate;
On the Si substrate, press following condition growth fluoridation amorphous carbon membrane;
Source gas: C
4F
8, CH
4Mixed gas;
Process chamber pressure: 0.1Pa～5Pa;
Microwave power: 1000W～2000W;
Deposition temperature: 200 ℃～300 ℃;
C
2H
2Flow: 5～10sccm;
C
4F
8Flow: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the fluoridation amorphous carbon membrane of 800 dusts to 2200 dusts;
On fluoridation amorphous carbon membrane, press following condition growth SiN film:
Source gas: SiH
4With N
2Mixed gas;
Process chamber pressure: 1Pa;
Chamber base vacuum: 10
-5Pa;
Microwave power: 1200W;
Deposition temperature: 50 ℃;
SiH
4The flow of source gas: 10sccm;
N
2The flow of gas: 5sccm;
Ar gas flow: 100sccm;
Deposition time: 10 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the SiN film of 100 dusts.
5. the method for a plasma chemical vapor deposition fluoridation amorphous carbon membrane comprises following process:
To be placed on chamber after the cleaning of Si substrate;
On the Si substrate, press following condition deposit carborundum films:
Source gas: SiH
4Gas, Ar gas and CH
4Mixed gas;
Process chamber pressure: 1Pa;
Chamber base vacuum: 10
-5Pa;
Microwave power: 1200W;
Deposition temperature: 400 ℃;
The flow of Ar gas: 100sccm;
CH
4Flow: 10sccm;
SiH
4Flow: 10sccm;
Deposition time: 10 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the silicon carbide film layer of 40 dusts;
On silicon carbide film layer, press following condition growth fluoridation amorphous carbon membrane:
Source gas: C
4F
8, CH
4Mixed gas;
Process chamber pressure: 0.1Pa～5Pa;
Microwave power: 1000W～2000W;
Deposition temperature: 200 ℃～300 ℃;
C
2H
2Flow: 5～10sccm;
C
4F
8Flow: 50～200sccm;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the fluoridation amorphous carbon membrane of 800 dusts to 2200 dusts;
On fluoridation amorphous carbon membrane, press following condition growth SiN film:
Source gas: SiH
4With N
2Mixed gas;
Process chamber pressure: 1Pa;
Chamber base vacuum: 10
-5Pa;
Microwave power: 1200W;
Deposition temperature: 200 ℃;
SiH
4The flow of source gas: 10sccm;
N
2The flow of gas: 5sccm;
Ar gas flow: 100sccm;
Deposition time: 20 seconds;
Substrate is the rotating shaft rotation with the center of circle, and speed of rotation remains 60 rev/mins;
Obtain the SiN film of 100 dusts.
6. a fluoride amorphous carbon rete structure that obtains with the method for claim 4 comprises substrate, fluoride amorphous carbon, it is characterized in that being provided with on fluoride amorphous carbon one deck silicon nitride.
7. a fluoride amorphous carbon rete structure that obtains with the method for claim 5 comprises substrate, fluoride amorphous carbon, it is characterized in that being provided with one deck SiC rete between Si substrate and fluorinated amorphous carbon-coating, is provided with one deck silicon nitride on fluoride amorphous carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100185192A CN100523292C (en) | 2007-08-21 | 2007-08-21 | Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100185192A CN100523292C (en) | 2007-08-21 | 2007-08-21 | Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101109077A CN101109077A (en) | 2008-01-23 |
| CN100523292C true CN100523292C (en) | 2009-08-05 |
Family
ID=39041331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100185192A Expired - Fee Related CN100523292C (en) | 2007-08-21 | 2007-08-21 | Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100523292C (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296006A (en) * | 2012-02-24 | 2013-09-11 | 中国科学院微电子研究所 | Diffusion blocking layer and metal interconnection structure and manufacturing method thereof |
| CN103352205B (en) * | 2013-05-31 | 2015-11-25 | 上海华力微电子有限公司 | The cleaning method of CVD (Chemical Vapor Deposition) chamber |
| CN104445986B (en) * | 2014-11-20 | 2016-06-08 | 中国工程物理研究院化工材料研究所 | A kind of plating carbon method of the quartz ampoule for crystal growth |
| CN109524304B (en) * | 2018-11-21 | 2021-04-27 | 北京国联万众半导体科技有限公司 | Method for processing silicon carbide gate dielectric fluorine plasma and silicon carbide power device |
| CN111229337B (en) * | 2020-01-17 | 2021-11-30 | 上海新微技术研发中心有限公司 | Method for manufacturing optical waveguide multi-micro-channel chip |
| CN111229339B (en) * | 2020-01-17 | 2021-11-30 | 上海新微技术研发中心有限公司 | Method for manufacturing grating waveguide microfluid chip |
| CN111430713A (en) * | 2020-03-31 | 2020-07-17 | 天目湖先进储能技术研究院有限公司 | Preparation method of metal lithium cathode, battery and application |
| KR20230169654A (en) * | 2022-06-09 | 2023-12-18 | 충남대학교산학협력단 | High-k Amorphous Fluorinated Carbon Thin Films, Preparation Method thereof and Applications to Semiconductor or Capacitor Devices |
-
2007
- 2007-08-21 CN CNB2007100185192A patent/CN100523292C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101109077A (en) | 2008-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100523292C (en) | Method of plasma chemistry vapor depositing fluoridation amorphous carbon membrane and membrane layer structure thereof | |
| US5156881A (en) | Method for forming a film on a substrate by activating a reactive gas | |
| JP2634743B2 (en) | Low temperature chemical vapor deposition | |
| JP3930840B2 (en) | Low-κ dielectric inorganic / organic hybrid film | |
| US20040076767A1 (en) | Method of manufacturing silicon carbide film | |
| US5643838A (en) | Low temperature deposition of silicon oxides for device fabrication | |
| JP4881422B2 (en) | Method for producing hydrogenated silicon oxycarbide film having low dielectric constant | |
| KR100930430B1 (en) | Deposition Method and Deposition Device | |
| TW495805B (en) | Gas distribution system for a CVD processing chamber | |
| EP1123991A2 (en) | Low dielectric constant materials and processes | |
| EP0934433B1 (en) | Method for depositing fluorine doped silicon dioxide films | |
| KR20050034566A (en) | Method of manufacturing silicon carbide film | |
| JPH0982495A (en) | Plasma producing device and method | |
| JP3178375B2 (en) | Method of forming insulating film | |
| JP4743470B2 (en) | Method for forming a film in contact with a Cu layer on a semiconductor substrate | |
| EP1039522A1 (en) | Process for producing insulating film | |
| CN207973800U (en) | System for handling substrate | |
| TW454266B (en) | Method for producing silicon a series of nitride film | |
| CN101925690A (en) | Insulating film material, the film that uses this insulating film material and insulating film | |
| JP4015510B2 (en) | Interlayer insulating film for multilayer wiring of semiconductor integrated circuit and manufacturing method thereof | |
| JPH1197533A (en) | Semiconductor integrated circuit and manufacture therefor | |
| CN101104925A (en) | Method for chemical gaseous phase deposition of silicon nitride film by electron cyclotron resonance plasma | |
| EP1191582A1 (en) | Production method for semiconductor device | |
| EP1035569A1 (en) | Method for forming plasma films | |
| CN100584999C (en) | Chemical vapor depositing method of low dielectric constant silicon oxide membrane |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090805 Termination date: 20190821 |