CN100521849C - Double face display and making method thereof - Google Patents
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- CN100521849C CN100521849C CNB2005100848558A CN200510084855A CN100521849C CN 100521849 C CN100521849 C CN 100521849C CN B2005100848558 A CNB2005100848558 A CN B2005100848558A CN 200510084855 A CN200510084855 A CN 200510084855A CN 100521849 C CN100521849 C CN 100521849C
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Abstract
A double face display device includes a transparent base plate and a pixel array. The pixel array is set on the base plate, among which, every pixel contains at least a first sub-pixel and a second sub-pixel, the first one includes a first organic emitting diode driven by a first film transistor and a shading layer adhered on the first organic light emitting diode, the second sub-pixel includes second organic light emitting diode driven by a second film transistor and a shading layer formed between said transparent base plate and second light emitting diode.
Description
Technical field
The present invention relates to a kind of double-side display device, particularly relate to double-side display device of a kind of organic electric-excitation luminescent and preparation method thereof.
Background technology
The form of electronic product is variation gradually, and double-sided display function becomes the main characteristic of new generation electronic product.For example, the double-side display device of mobile phone inside can simultaneously show mobile phone function of tonic chord window, and another side shows the time.At present the double-side display device produced of industry is generally two single face display floaters subsides is formed, for example a display panels and an organic electroluminescence panel to paste, two display panels to paste or two organic electroluminescence panels to subsides.
Fig. 1 is existing double-side display device.Existing double-side display device 10 comprises one first display floater 11 and one second display floater 12.First display floater 11 has a transparency carrier 111, one first electrode 112, a luminous zone 113, one second electrode 114 and a cap 115.Luminous zone 113 is between first electrode 112 and second electrode 114.First electrode 112 is formed on the transparency carrier 111, and cap 115 is attached on the transparency carrier 111.Second display floater 12 also has a transparency carrier 121, a third electrode 122, a luminous zone 123, one the 4th electrode 124 and a cap 125.Luminous zone 123 is between third electrode 122 and the 4th electrode 124.Third electrode 122 is formed on the transparency carrier 121, and cap 125 is attached on the transparency carrier 121.The cap 115 of first display floater 11 and 125 pairs of subsides of the cap of second display floater 12 are to form double-side display device 10.
As mentioned above, existing double-side display device 10 has two caps 115 and 125 and two transparency carriers 111 and 121.Therefore, the volume of whole device is big, thickness is thicker, and weight is also heavier, and does not meet light, thin, short, the little trend of electronic product.In addition, two display floaters 11 and 12 get via the different process manufacturing respectively, thus its complicate fabrication process and time-consuming, and also two display floaters 11 and 12 must drive respectively.
The complex process of existing double-side display device and cap and substrate number are many, and make thickness be difficult to attenuation.The invention provides a kind of organic electroluminescence panel and technology thereof and solve above-mentioned shortcoming.
Summary of the invention
Main purpose of the present invention is to make double-side display device with the consistent technology of organic electroluminescence panel, reaches work simplification and reduces cap or the substrate number, so that a kind of thin double-side display device to be provided.
Double-side display device of the present invention comprises a transparency carrier and a pel array.Pel array is positioned on the transparency carrier, and wherein each pixel comprises at least one first sub-pixel and at least one second sub-pixel.First sub-pixel comprises first Organic Light Emitting Diode by the first film transistor driving, and has a photoresist layer and be formed between the transparency carrier and first Organic Light Emitting Diode.Second sub-pixel comprises second Organic Light Emitting Diode that is driven by second thin-film transistor, and has a filter and be attached on second Organic Light Emitting Diode.Also have a light shield layer and be attached to first Organic Light Emitting Diode top, cooperate the photoresist layer to control the zone of first light emission direction and photochromic.Have another light shield layer between the transparency carrier and second Organic Light Emitting Diode, and cooperate filter to control the zone of second light emission direction and photochromic, the photoresist layer is formed between this another light shield layer and the transparency carrier.Filter can decide pattern via the demand of different designs, to reach the purpose of part shading, part optical filtering.First sub-pixel is accepted one first signal of telecommunication, and showing one first image along one first light emission direction, and second sub-pixel accepts one second signal of telecommunication, to show one second image along one second light emission direction.
According to the manufacture method of double-side display device of the present invention, at first on transparency carrier, define a first area and a second area.Form two thin-film transistors subsequently on the transparency carrier in first area and second area.Then form a photoresist layer on the transparency carrier in the first area, and then form on the photoresist layer of an Organic Light Emitting Diode in the first area with second area in transparency carrier on.Again a filter is attached on the Organic Light Emitting Diode in the second area.Interfere with each other for fear of above-mentioned first image and second image, above first Organic Light Emitting Diode, attach a light shield layer, cooperate the photoresist layer to control the zone of first light emission direction and photochromic.The zone of second light emission direction and the photochromic deposition photoengraving lithography that can utilize are made light shield layers such as black matrix between the transparency carrier and second Organic Light Emitting Diode, and the mode that cooperates the outside contraposition of filter to fit is controlled.Light shield layer can comprise reflectorized material, utilizes reflecting effect to improve luminous efficiency, for example can be metal.Double-side display device of the present invention can the penetration white organic LED as host emitter, utilize transparency electrode to be used as the electrode of white organic LED.The material of above-mentioned transparency electrode comprises thin metal or materials such as metal oxide or semiconductor.Remove to drive the sub-pixel of different light emission directions with different thin-film transistors.
According to a preferred embodiment of the invention, under the light-emitting component of parton pixel region, can form a light shield layer, and cooperate the design on the optical filtering substrate, so that thin double-side display device to be provided, and simplify its technology.The advantage of said structure is: only need a substrate can make the display effect of two panels.The pixel drive of double-sided display is independent operation separately, and promptly the two sides can show different pictures simultaneously, and this picture is not limited to the display mode of monochrome or RGB (RGB) or red, green, blue and white (RGBW), and evaporation process is simplified, and need not use high meticulous shielding.
Description of drawings
Fig. 1 is existing double-side display device;
Fig. 2 is a double-side display device of the present invention;
Fig. 3 A is first sub-pixel structure of double-side display device of the present invention;
Fig. 3 B is second sub-pixel structure of double-side display device of the present invention;
Fig. 3 C-3D is the white organic LED of two kinds of different types; And
Fig. 4 A-4E is the manufacture method of double-side display device of the present invention.
The simple symbol explanation
10 double-side display devices (having now) 321b, first transparency electrode
11 first display floaters, 322 organic electric-excitation luminescent structures
111 transparency carrier 322a organic electric-excitation luminescent structures
112 first electrode 322b organic electric-excitation luminescent structures
113 luminous zones, 3221 blue light-emitting layers
114 second electrodes, 3222 look transition material layer
115 caps, 3223 red light emitting layers
12 second display floaters, 3224 green light emitting layers
121 transparency carriers, 3225 blue light-emitting layers
122 third electrodes, 323 transparency electrodes
123 luminous zone 323a, second transparency electrode
124 the 4th electrode 323b, second transparency electrode
125 caps, 33 light shield layers
20 double-side display devices (the present invention), 34 thin-film transistors
21 transparency carriers, 341 semiconductor layers
22 optical filtering substrates, 342 gate insulators
23 pixels, 343 grids
30 first sub-pixels, 344 source electrodes
345 drain electrodes of 31 translucent constructions
311 photoresist layers, 40 second sub-pixel
313 inner layer dielectric layers, 41 light tight structures
314 first passivation layers, 411 photoresist layers
315 second passivation layers, 412 light shield layers
316 cover layers, 42 second Organic Light Emitting Diodes
32 first Organic Light Emitting Diodes, 421 transparency electrodes
32a white organic LED 422 organic electric-excitation luminescent structures
32b white organic LED 423 transparency electrodes
321 transparency electrodes, 43 filter layers
321a first transparency electrode 44 thin-film transistors
Embodiment
Existing conjunction with figs. describes double-side display device of the present invention and preparation method thereof in detail, and enumerates preferred embodiment and be described as follows:
Fig. 2 is a double-side display device of the present invention.Double-side display device 20 comprises a transparency carrier 21, an optical filtering substrate 22 and a pel array 23 of being made up of a plurality of pixels 231.Pel array 23 is positioned on the transparency carrier 21, and wherein each pixel 231 comprises at least one first sub-pixel 30 and at least one second sub-pixel 40.First sub-pixel 30 has one first Organic Light Emitting Diode 32 that a translucent construction 31 reaches by the first film transistor driving, and translucent construction 31 is formed on the transparency carrier 21, and first Organic Light Emitting Diode 32 is formed on the translucent construction 31.One second Organic Light Emitting Diode 42 that second sub-pixel 40 has a light tight structure 41 and driven by second thin-film transistor, wherein light tight structure 41 is formed on the transparency carrier 21, and 42 of second Organic Light Emitting Diodes are formed on the light tight structure 41.Optical filtering substrate 22 is attached on first Organic Light Emitting Diode 32 and second Organic Light Emitting Diode 42.
The pattern of optical filtering substrate 22 is made of a light shield layer 33 and a filter 43, and light shield layer 33 follows optical filtering substrate 22 contrapositions to be attached on first Organic Light Emitting Diode 32, to cover the light that it sends; 43 of filters follow optical filtering substrate 22 contrapositions to be attached on second Organic Light Emitting Diode 42, to filter the light that it sends.As shown by arrows, the light that first Organic Light Emitting Diode 32 is sent only can be penetrated by transparency carrier 21, and the light that second organic light-emitting diodes 42 is sent only can be penetrated by optical filtering substrate 22.By said structure, when first sub-pixel is accepted one first signal of telecommunication, can show one first image along one first light emission direction; When second sub-pixel is accepted one second signal of telecommunication, then can show one second image along one second light emission direction.This first image and this second image can distinctly be controlled its demonstration time, for example roughly in same time showing.
Fig. 3 A is first sub-pixel structure of double-side display device of the present invention.First sub-pixel 30 mainly comprises above-mentioned translucent construction 31, first organic light-emitting diodes 32 and a first film transistor 34.The first film transistor 34 has semi-conductor layer 341, a gate insulator 342, a grid 343, one source pole 344 and a drain electrode 345.The material of semiconductor layer 341 is amorphous silicon or polysilicon, and itself and source electrode 344 or 345 the contact zone of draining impose heavy doping, for example looks the kind of thin-film transistor and selects doped p type dopant material or n type dopant material.Gate insulator 342 intercepts between semiconductor layer 341 and grid 343, is generally an oxide layer.Grid 343, source electrode 344 and to drain 345 be to separate with an inner layer dielectric layer (ILD) 313 each other.On source electrode 344 and drain electrode 345, make one first passivation layer 314 with insulating material such as silicon nitride or silica.First passivation layer 314 has an open-work provides drain electrode 345 to contact with a transparency electrode 321 of first Organic Light Emitting Diode 32 and the purpose that reaches driving first Organic Light Emitting Diode 32.
On translucent construction 31 and the first film transistor 34, form one second passivation layer 315, so that a flat surfaces to be provided.Second passivation layer 315 has the continue open-work of first passivation layer 314 of an open-work.The transparency electrode 321 of first Organic Light Emitting Diode 32 is formed on second passivation layer 315 and by this open-work and contacts with drain electrode 345.On the transparency electrode 321 an organic electric-excitation luminescent structure 322, and another transparency electrode 323.Cover layer (cap layer) 316 is interval between first Organic Light Emitting Diode 32 and other Organic Light Emitting Diode avoiding light leak or electric leakage, and in order to protect first Organic Light Emitting Diode 32.As shown in Figure 3A, first sub-pixel 30 comprises that also a light shield layer 33 is attached on first Organic Light Emitting Diode 32 to stop the upwards light of emission.
Fig. 3 B is second sub-pixel structure of double-side display device of the present invention.Second sub-pixel 40 mainly comprises light tight structure 41, second Organic Light Emitting Diode 42 and one second thin-film transistor 44.Second thin-film transistor 44 is in order to drive second Organic Light Emitting Diode 42, and its structure and the first film transistor 32 are similar, do not repeat them here.Compared to first sub-pixel 30, second sub-pixel 40 also comprises a light shield layer 412, it is formed between the transparency carrier 21 and second Organic Light Emitting Diode 42, and have a filter 43 and be attached on second Organic Light Emitting Diode 42, wherein light shield layer 412 comprises a black photo anti-corrosion agent material, light tight metal or metal oxide layer.
The photoresist layer 311 and filter 43 colors of above-mentioned first sub-pixel 30 or second sub-pixel 40 can be redness, green, blueness or transparent, and both can select roughly the same color.The transparency electrode of first Organic Light Emitting Diode 32 and second Organic Light Emitting Diode 42 can be tin indium oxide (ITO) or indium zinc oxide materials such as (IZO) is made.In principle, the present invention need not be limited with the light color of OLED, therefore can adopt the colored photic resist layer or the filter of white organic LED collocation redgreenblue, or make the sub-pixel of different colours with arrange in pairs or groups transparent photic resist layer or filter of ruddiness, green glow and three kinds of Organic Light Emitting Diodes of blue light.But the mode that adopts white organic LED can be avoided the different dyestuff of position evaporation according to RGB three sub pixels, so technology is comparatively simple.
Fig. 3 C-3D is the white organic LED 32a and the 32b of two kinds of patterns.With first Organic Light Emitting Diode 32 is example, and it can select to pile up the generation white light mutually with a blue light-emitting layer 3221 and transition material layer of the same colour 3222, and wherein look transition material layer 3222 comprises a yellow fluorescent material; Or with a red light emitting layer 3223, a green light emitting layer 3224 and a blue light-emitting layer 3225 mutual storehouses generation white lights.Same mode can be applicable to make second Organic Light Emitting Diode 42.In addition, organic electric-excitation luminescent structure 322a and 322b comprise electron injecting layer, electron transfer layer, hole injection layer or hole transmission layer etc. usually.Above-mentioned each layer belongs to prior art, do not repeat them here.
In sum, double-side display device of the present invention utilizes transparency electrode to be used as (comprising thin metal or metal oxide or semiconductor) electrode of Organic Light Emitting Diode.Remove to drive the Organic Light Emitting Diode of light-emitting zone up or down with different thin-film transistors.Utilize deposition photoengraving lithography to be made at light shield layers such as the photoresist layer of zones of different on the substrate or black matrix, the mode that cooperates the outside contraposition of filter to fit is simultaneously controlled different light-emitting zone and photochromic.Filter can decide pattern according to the different designs demand, to reach the purpose of part shading, part optical filtering.
Fig. 4 A-4F is the manufacture method of double-side display device 20 of the present invention.The manufacture method of double-side display device 20 comprises: a transparency carrier 21 is provided, and defines a first area 21a and a second area 21b on transparency carrier 21.Form two thin- film transistors 34 and 44 subsequently on the transparency carrier 21 in first area 21a and second area 21b.Then form a photoresist layer 311 on the transparency carrier 21 in the 21a of first area, afterwards on the photoresist layer 311 in the 21a of first area with second area 21b in transparency carrier 21 on form an Organic Light Emitting Diode 32 (as shown in Figure 3A).Then, a filter 43 is attached on the Organic Light Emitting Diode 42 (shown in Fig. 3 B) in the second area 21b.Be described in detail as follows.
Please refer to Fig. 4 A, transparency carrier 21, for example glass substrate after pre-treatments such as cleaning, doping, defines a plurality of pixel regions earlier, and each pixel region is divided into first area 21a and second area 21b.Carrying out thin-film transistor technology subsequently is made in the first film transistor 34 and second thin-film transistor 44 in first area 21a and the second area 21b respectively.
Please refer to Fig. 4 B, in the 21a of first area, form photoresist layer 311, and in second area 21b, form photoresist layer 411.Be noted that: photoresist layer 411 but for the planarization of structure, can form photoresist layer 411 in the same step of making photoresist layer 311 in the present invention and inessential usually.Because in the thin-film transistor technology formerly, gate insulator 342, inner layer dielectric layer 313 and first passivation layer 314 may be formed on the transparency carrier 21 by holomorphism, therefore, photoresist layer 311 and 411 and transparency carrier 21 between may have structures such as gate insulator 342, inner layer dielectric layer 313 and first passivation layer 314.
Please refer to Fig. 4 C, in second area 21b, form light shield layer 412 on photoresist layer 411, for example deposit the black photo anti-corrosion agent material.Light shield layer also can comprise reflectorized material, for example metal.
Then form first Organic Light Emitting Diode 32 on photoresist layer 311; Form second Organic Light Emitting Diode 42 on light shield layer 412.Please refer to Fig. 4 D, often be manufactured with two electrodes and the luminescent layer of OLED in the middle of the technology with evaporation coating method.For simplifying technology, can on the structure of Fig. 4 C, form an Organic Light Emitting Diode comprehensively, its part that is positioned at first area 21a is first Organic Light Emitting Diode 32, and the part that is positioned at second area 21b is second Organic Light Emitting Diode 42.In a preferred embodiment, form before the Organic Light Emitting Diode comprehensively, form second a smooth passivation layer 315 earlier; Be formed with after the OLED, patterning in addition again, then sedimentary cover 316 is with protection and separate into a plurality of Organic Light Emitting Diodes.
Please be simultaneously with reference to Fig. 3 C, during as if the employing white organic LED, the step of its formation also is included on the interior photoresist layer of first area 21a and formation one first transparency electrode 321a on the transparency carrier 21 in the second area 21b; Then forming blue light-emitting layer 3221 and look transition material layer 3222 is stacked on the first transparency electrode 321a mutually; And form one second transparency electrode 323a on those luminescent layers.In a preferred embodiment, look transition material layer 3222 doping one yellow fluorescent material.Please be simultaneously with reference to Fig. 3 D, another method of making white organic LED is included on the interior photoresist layer 311 of first area 21a and on the transparency carrier 21 in the second area 21b and forms one first transparency electrode 321b; Then forming red light emitting layer 3223, green light emitting layer 3224 and blue light-emitting layer 3225 is stacked on the first transparency electrode 321b mutually; And form one second transparency electrode 323b on those luminescent layers.
Please refer to Fig. 4 E, attach optical filtering substrate 22 in the superstructure of Fig. 4 D, light shield layer 33 contrapositions are fitted on first Organic Light Emitting Diode 32, filter 43 contrapositions simultaneously fit on second Organic Light Emitting Diode 42.Also end covering simultaneously after optical filtering substrate 22 is fitted and stop the aqueous vapor invasion as envelope.
Characteristics of the present invention cut into two different zones on existing luminous zone, it is luminous that a part of sub-pixel is responsible for front panel, and it is luminous that another partly is responsible for backplate.The colour developing pattern of front panel is finished by a thin-film transistor and the outer front filter that pastes, and rear board cooperates the photoresist layer to finish by another thin-film transistor.The illumination mode of its front and back panel can be the combination in any of monochrome or RGB (RGB) or red, green, blue and white (RGBW) or above-mentioned three kinds of methods.Simultaneously Organic Light Emitting Diode also is not limited only to white light, also can only be red (R), green (G), indigo plant (B) or combination in any wherein.With prior art in comparison, the present invention only needs a glass substrate can make the display effect of two panels.The pixel drive of double-sided display is independent operation separately, and promptly the two sides can show different pictures simultaneously.In addition, evaporation process is simplified, and need not use high meticulous shielding.
Above-listed detailed description specifies at the preferred embodiment of the present invention, and only the foregoing description is not in order to limiting claim of the present invention, does not allly break away from the equivalence that skill spirit of the present invention does and implements or change, all should be contained in the claim of the present invention.
Claims (24)
1. double-side display device comprises:
Transparency carrier; And
Pel array, be positioned on this transparency carrier, each pixel comprises at least one first sub-pixel and at least one second sub-pixel, wherein this at least one first sub-pixel comprises first Organic Light Emitting Diode by the first film transistor driving, and this at least one second sub-pixel comprises second Organic Light Emitting Diode that is driven by second thin-film transistor;
First light shield layer is attached on this first Organic Light Emitting Diode;
Second light shield layer is formed between this transparency carrier and this second Organic Light Emitting Diode;
Filter is attached on this second Organic Light Emitting Diode; And
The photoresist layer is formed between this transparency carrier and this first Organic Light Emitting Diode and between this transparency carrier and this second light shield layer.
2. double-side display device as claimed in claim 1, wherein this first Organic Light Emitting Diode is a white organic LED.
3. double-side display device as claimed in claim 1, wherein this second Organic Light Emitting Diode is a white organic LED.
4. double-side display device as claimed in claim 1, wherein this first light shield layer comprises a black photo anti-corrosion agent material.
5. double-side display device as claimed in claim 1, wherein this first light shield layer comprises a reflectorized material.
6. double-side display device as claimed in claim 1, wherein this first light shield layer is light tight metal.
7. double-side display device as claimed in claim 1, wherein this first light shield layer comprises a metal oxide.
8. double-side display device as claimed in claim 1, wherein this second light shield layer comprises a black photo anti-corrosion agent material.
9. double-side display device as claimed in claim 1, wherein this second light shield layer comprises a reflectorized material.
10. double-side display device as claimed in claim 1, wherein this second light shield layer is light tight metal.
11. double-side display device as claimed in claim 1, wherein this second light shield layer comprises a metal oxide.
12. double-side display device as claimed in claim 1, wherein the color of this photoresist layer and this filter is selected from by red, green, blue and the transparent group that constitutes.
13. double-side display device as claimed in claim 1, wherein the color of this photoresist layer and this filter is identical.
14. double-side display device as claimed in claim 1, wherein this first Organic Light Emitting Diode and this second Organic Light Emitting Diode respectively have two transparency electrodes.
15. double-side display device as claimed in claim 14, wherein this two transparency electrode be tin indium oxide and indium zinc oxide the two one of.
16. double-side display device as claimed in claim 1, wherein this first Organic Light Emitting Diode and this second Organic Light Emitting Diode comprise a red light emitting layer, a green light emitting layer and the mutual storehouse of a blue light-emitting layer.
17. double-side display device as claimed in claim 1, wherein this first Organic Light Emitting Diode and this second Organic Light Emitting Diode comprise a blue light-emitting layer and the mutual storehouse of transition material layer of the same colour.
18. double-side display device as claimed in claim 17, wherein this look transition material layer comprises a yellow fluorescent material.
19. double-side display device as claimed in claim 1, wherein this first sub-pixel is accepted one first signal of telecommunication, showing one first image along one first light emission direction, and this second sub-pixel accepts one second signal of telecommunication, to show one second image along one second light emission direction.
20. double-side display device as claimed in claim 19, wherein this first image and this second image are in same time showing.
21. the manufacture method of a double-side display device, this method comprises:
Transparency carrier is provided;
Definition first area and second area on this transparency carrier;
Respectively form thin-film transistor on the transparency carrier in this first area and this second area;
Form a photoresist layer on the transparency carrier in this first area and this second area;
Form light shield layer on this photoresist layer in this second area;
On the photoresist layer in this first area with this second area in this light shield layer on be formed with OLED separately; And
Anti-dazzling screen is attached on this Organic Light Emitting Diode in this first area; And
Attach on filter this Organic Light Emitting Diode in this second area.
22. as claim 21 a described method, the step of wherein above-mentioned those Organic Light Emitting Diodes of formation also comprises:
Form first transparency electrode on the photoresist layer on the light shield layer in this second area and this first area;
On this first transparency electrode, form red light emitting layer, green light emitting layer and blue light-emitting layer; And
On those luminescent layers, form second transparency electrode.
23. method as claimed in claim 21, the step of wherein above-mentioned those Organic Light Emitting Diodes of formation also comprises:
Form first transparency electrode on the photoresist layer on the light shield layer in this second area and this first area;
On this first transparency electrode, form blue light-emitting layer and look transition material layer; And
On this blue light-emitting layer and this look transition material layer, form second transparency electrode.
24. method as claimed in claim 23, the step of wherein above-mentioned this look transition material layer of formation also comprises:
The doping yellow fluorescent material is in this look transition material layer.
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| CNB2005100848558A CN100521849C (en) | 2005-07-19 | 2005-07-19 | Double face display and making method thereof |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102023435B (en) | 2009-09-23 | 2013-01-02 | 北京京东方光电科技有限公司 | Liquid crystal display and manufacturing method thereof |
| CN102914868A (en) * | 2011-08-02 | 2013-02-06 | 财团法人工业技术研究院 | Double-sided displaying monitor |
| CN103094312B (en) * | 2013-01-11 | 2015-08-19 | 京东方科技集团股份有限公司 | Organic electroluminescence display panel |
| CN107359175B (en) * | 2017-07-25 | 2020-02-11 | 上海天马微电子有限公司 | Micro light-emitting diode display panel and display device |
| CN107863372A (en) * | 2017-10-27 | 2018-03-30 | 朱秋华 | A kind of double-sided OLED display panel, display device and preparation method thereof |
| CN110197839B (en) | 2018-06-15 | 2021-08-03 | 京东方科技集团股份有限公司 | Double-sided display panel, preparation method thereof and double-sided display device |
| CN110738937B (en) * | 2018-07-20 | 2021-12-07 | 英属开曼群岛商镎创科技股份有限公司 | Display panel |
| CN108769673A (en) * | 2018-08-07 | 2018-11-06 | 布勒索特克斯光电设备（合肥）有限公司 | A kind of device and method of camera alignment and optical correction |
| CN110931652A (en) * | 2019-11-26 | 2020-03-27 | 深圳市华星光电半导体显示技术有限公司 | OLED double-sided display device |
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