CN100521129C - A protection and sealing method of high-power semiconductor device - Google Patents
A protection and sealing method of high-power semiconductor device Download PDFInfo
- Publication number
- CN100521129C CN100521129C CNB2007101920311A CN200710192031A CN100521129C CN 100521129 C CN100521129 C CN 100521129C CN B2007101920311 A CNB2007101920311 A CN B2007101920311A CN 200710192031 A CN200710192031 A CN 200710192031A CN 100521129 C CN100521129 C CN 100521129C
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Abstract
The invention relates to a protective encapsulating method of an electrode of a high-power semiconductor device, and is characterized in that: a screw is screwed in a screw hole which is arranged on the end surface of the electrode, then the end surface of the screw is directly closely contacted with the end surface of the electrode or indirectly contacted with the end surface of the electrode by a sealing ring, so as to carry out the sealing shelter protection for the end surface of the electrode; then a chip and the electrode with the screw sealing shelter protection are wholly positioned in a mold cavity to carry out the injection encapsulating, and finally a molded encapsulation product is obtained by removing the screw sealing shelter protection. The invention solves the problems of adhesive leakage and the damages of the electrode and the chip which are generated in the injection molding encapsulating of the high-power semiconductor device. The invention is characterized by ingenious concept, simple process, being conductive to the scale production and good product thermal conductivity, thus being much better than the existing non-pressurized infusion epoxy process.
Description
Technical field
The present invention relates to the encapsulation technology field of semiconductor device, particularly a kind of protection packaging method of large power semiconductor device electrode.
Background technology
The high power semi-conductor chip often adopts metal column as the pin electrode in encapsulation, to bear big electric current.Such as, heavy-duty diode module shown in Figure 1 is made up of two power diode chips, a substrate and two electrodes, and substrate is as the common cathode of two chips or the electrode of anode altogether, and two metal columns are respectively as the electrode of two chips.At present, the method for packing that this diode power module is adopted is: elder generation's plastic frame of suit on chip to be packaged and electrode, and in plastic frame, pour into liquid epoxy again, and encapsulate by high temperature or normal temperature cure, see shown in Figure 2.The deficiency of this method for packing is: 1, will install plastic frame earlier additional in the encapsulation, could pour into epoxy packages then, operation is many, is not suitable for large-scale production; 2, the general pyroconductivity of liquid epoxy low (pyroconductivity of common designations epoxy is 0.21W/m.k, and high trade mark epoxy is 0.5W/m.k), poor thermal conductivity is unfavorable for the heat radiation of high power device; 3, very careful in the encapsulation, epoxy droplet (because electrode end surface is the end face that is used to be electrically connected) on electrode end surface in order to avoid increase contact resistance, therefore must not be had relatively high expectations to operation control.
The packaging technology of injection-compression molding is normally put into mold cavity with device to be packaged earlier and is located, and the epoxy with molten condition is expelled in the mold cavity by inlet pressure with press then, and the last cooling forming and the demoulding reach the encapsulation purpose.This method for packing is compared with above-mentioned perfusion epoxy packages method, and technology is simple on the one hand, is fit to large-scale production, can use the epoxy (pyroconductivity is 0.67-2.3W/m.k) of high thermoconductivity on the other hand.Be applied at present the encapsulation of a type, uniserial type low-power device, but be not applied to large power semiconductor device.Its reason is: large power semiconductor device makes encapsulation difficult because electrode size is big and rigidity is strong.
This injection-compression molding is packaged with following a few procedure:
1, will encapsulate preceding naked and install on the bed die, and the location.
2, matched moulds (upper and lower mould closes up, and naked part to be packaged enters in the seal chamber of mould).
3, pressure injection epoxy (epoxy enters in the seal chamber).
4、......。
Wherein, the matched moulds requirement is:
1) naked part to be packaged need enter in the seal chamber of mould.
2) to guarantee sealing in the cavity, when preventing the pressure injection epoxy, the epoxy seepage.
3) end face of electrode will expose seal chamber, can not be infected with by epoxy, and influence is electrically connected.
Difficult point is: this encapsulation has favorable mechanical to cooperate when requiring plastic package die with the electrode injection-compression molding, is similar to axle and the cooperating of axis hole.The end face of electrode will expose seal chamber, and the remainder of electrode will be enclosed in the seal chamber, and this just requires the appropriate section of mould and electrode that mechanically good being sealed and matched arranged.If the gap is big, epoxy seepage then is infected with the end face and the mould of electrode; If the gap is little, mould is run into electrode, lesion electrode, chip.Both of these case all can not take place, and the gap will be adjusted to is difficult just, (electrode size of axle type, uniserial type low-power device is little so present large power semiconductor device all can't adopt the injection-compression molding packaging technology, rigidity is little, even the gap between electrode and mould is little, mould run into electrode and the stress that produces can lesion electrode yet, chip, can ordinary production).
Summary of the invention
The invention provides a kind of protection packaging method of large power semiconductor device electrode; its objective is to solve the large power semiconductor device that has metal column exit electrode extraction electrode that in the injection-compression molding packaging technology, runs into and die sealing matching problem and epoxy bonds electrode end surface problem.
For achieving the above object, the technical solution used in the present invention is: a kind of protection packaging method of large power semiconductor device electrode, before the pressure injection encapsulation, be screwed into screw set on the electrode end surface of packed chip with screw, the screw end face directly or through sealing ring is closely contacted with electrode end surface indirectly, electrode end surface is sealed masking protection with this; Then the electrode integral body of chip and band screw sealing masking protection is positioned at and carries out the pressure injection encapsulation in the mold cavity, remove the packaged article that obtains moulding behind the screw sealing masking protection at last.
Related content in the technique scheme is explained as follows:
1, in the such scheme, described " electrode " is electric leading-out terminal.Described " electrode end surface " is meant and is used to the end face that is electrically connected on the electrode.
2, in the such scheme, the diameter of described screw ailhead is less than or equal to the external diameter of electrode end surface.
3, the present invention mainly solves the leakage glue of large power semiconductor device generation in the injection-compression molding encapsulation and damages pin, chip problem.Its core is that the whole injection-compression molding in back is sheltered in the electrode end surface sealing, obtains the goods that need after removal sealing is at last sheltered.
Because the technique scheme utilization, the present invention compared with prior art has following advantage and effect:
1, the present invention only needs epoxy injection-compression molding one procedure, and packaging process is simple, is suitable for large-scale production.
2, the present invention can use the epoxy (pyroconductivity is 0.67-2.3W/m.k) of high thermoconductivity, and thermal conductivity is good, helps heat radiation, the bring to power of high power device and reduces cost.
3, the present invention is by the sealing masking protection; preferably resolve the large power semiconductor device of metal column as electrode; electrode that in the injection-compression molding packaging technology, runs into and die sealing matching problem and epoxy bonds electrode end surface problem; its technical conceive is simplified ingenious, has higher utility.
Description of drawings
Accompanying drawing 1 is the stereogram of existing heavy-duty diode module suit plastic frame;
Accompanying drawing 2 is existing heavy-duty diode module perfusion epoxy packages stereogram;
Accompanying drawing 3 is naked stereogram before the heavy-duty diode module package of the present invention;
Accompanying drawing 4 is sealing masking protection stereogram before the heavy-duty diode module package of the present invention;
Accompanying drawing 5 is located schematic diagram for heavy-duty diode module of the present invention in mold cavity;
Accompanying drawing 6 is the stereogram after the heavy-duty diode module pressure injection encapsulation demoulding of the present invention;
Accompanying drawing 7 is the packaged article stereogram after heavy-duty diode module of the present invention is removed protection portion.
Among the last figure: 1, chip; 2, substrate; 3, electrode; 4, screw; 5, screw; 6, end face; 7, sealing ring; 8, mold cavity; 9, mould; 10, plastic frame; 11, protection portion; 12, epoxy.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment: a kind of protection packaging method of large power semiconductor device electrode
As shown in Figure 3, the heavy-duty diode module, form the bare chip assembly by two power diode chips 1, substrate 2 and two electrodes 3 (metal column), substrate 2 is as the common cathode or the common anode electrode of two chips 1, two electrodes 3 are respectively as the electric exit of two chips 1, and the end face 6 of each electrode 3 is provided with screw 4 and connects use (outer lead is screwed on electrode end surface by sheet metal) for the sheet metal outer lead.
As shown in Figure 4; before the pressure injection encapsulation; (now adopt brass with screw 5; also can adopt other metal material to make) be screwed into screw 4 set on the end face 6 of electrode 3; be provided with sealing ring 7 between screw 5 end faces and the electrode end surface 6, screw 5 end faces are closely contacted with electrode end surface 6 by sealing ring 7, seal masking protection with this end face 6 to electrode 3; avoid electrode end surface 6 to be infected with epoxy, influence device and be electrically connected performance from now on.The diameter of screw 5 ailheads should be less than or equal to the external diameter of electrode end surface 6 generally speaking.
As shown in Figure 5; after the sealing masking protection; the electrode integral body of chip 1 and band screw sealing masking protection is positioned in the mold cavity 8 by shown in Figure 5; and the outer lead end notch of mold cavity 8 correspondences should be greater than the electrode behind the device sealing masking protection 3; when making injection-compression molding, not damage device electrode 3 and chip 1.Epoxy with molten condition is expelled in the mold cavity 8 by inlet pressure with press then.The technology of compression moulding can be determined according to concrete condition adjustment such as moulds.Existing mould one mould can be made 32 modules, and clamping pressure is 110 tons, and changeing entrance pressure power is 3.5 tons.Mold temperature is 165 ℃.Epoxy adopts worker EME-1100RG.Curable epoxide time 240S.Behind the forming and hardening, material demoulding from the mould is taken off, and removes sealing masking protection portion 11, has just obtained the goods that compression moulding is finished.Fig. 6 is the stereogram of heavy-duty diode module after the demoulding.Remove the packaged article that obtains epoxy 12 injection-compression moldings after the screw sealing masking protection portion 11 at last, see shown in Figure 7.
The foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (2)
1, a kind of protection packaging method of large power semiconductor device electrode, it is characterized in that: before the pressure injection encapsulation, be screwed into screw set on the electrode end surface of packed chip with screw, the screw end face directly or through sealing ring is closely contacted with electrode end surface indirectly, electrode end surface is sealed masking protection with this; Then the electrode integral body of chip and band screw sealing masking protection is positioned at and carries out the pressure injection encapsulation in the mold cavity, remove the packaged article that obtains moulding behind the screw sealing masking protection at last.
2, protection packaging method according to claim 1 is characterized in that: the diameter of described screw ailhead is less than or equal to the external diameter of electrode end surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101920311A CN100521129C (en) | 2007-12-28 | 2007-12-28 | A protection and sealing method of high-power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101920311A CN100521129C (en) | 2007-12-28 | 2007-12-28 | A protection and sealing method of high-power semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101217121A CN101217121A (en) | 2008-07-09 |
| CN100521129C true CN100521129C (en) | 2009-07-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007101920311A Expired - Fee Related CN100521129C (en) | 2007-12-28 | 2007-12-28 | A protection and sealing method of high-power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100521129C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7939370B1 (en) * | 2009-10-29 | 2011-05-10 | Alpha And Omega Semiconductor Incorporated | Power semiconductor package |
| CN106783761B (en) * | 2017-01-11 | 2023-12-08 | 昆山晨伊半导体有限公司 | Multi-tower diode module and preparation method thereof |
-
2007
- 2007-12-28 CN CNB2007101920311A patent/CN100521129C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101217121A (en) | 2008-07-09 |
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Granted publication date: 20090729 Termination date: 20191228 |