CN100514555C - 基板处理装置 - Google Patents
基板处理装置 Download PDFInfo
- Publication number
- CN100514555C CN100514555C CNB2007100914050A CN200710091405A CN100514555C CN 100514555 C CN100514555 C CN 100514555C CN B2007100914050 A CNB2007100914050 A CN B2007100914050A CN 200710091405 A CN200710091405 A CN 200710091405A CN 100514555 C CN100514555 C CN 100514555C
- Authority
- CN
- China
- Prior art keywords
- substrate
- carrier gas
- dry
- dry gas
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 239000007789 gas Substances 0.000 claims abstract description 138
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000011282 treatment Methods 0.000 claims description 67
- 239000012159 carrier gas Substances 0.000 claims description 41
- 230000008676 import Effects 0.000 claims description 12
- 230000009471 action Effects 0.000 claims description 10
- 238000000605 extraction Methods 0.000 claims description 7
- 239000012808 vapor phase Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 104
- 238000001035 drying Methods 0.000 abstract description 38
- 238000001704 evaporation Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 2
- 230000005587 bubbling Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 description 51
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 30
- 238000000034 method Methods 0.000 description 12
- 238000006073 displacement reaction Methods 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 235000014347 soups Nutrition 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000000280 densification Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229960000834 vinyl ether Drugs 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 229940052303 ethers for general anesthesia Drugs 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006098132 | 2006-03-31 | ||
JP2006098132A JP2007273758A (ja) | 2006-03-31 | 2006-03-31 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101047116A CN101047116A (zh) | 2007-10-03 |
CN100514555C true CN100514555C (zh) | 2009-07-15 |
Family
ID=38556790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100914050A Active CN100514555C (zh) | 2006-03-31 | 2007-03-28 | 基板处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070227032A1 (zh) |
JP (1) | JP2007273758A (zh) |
KR (1) | KR100830011B1 (zh) |
CN (1) | CN100514555C (zh) |
TW (1) | TWI369727B (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8015984B2 (en) * | 2005-06-22 | 2011-09-13 | Tokyo Electron Limited | Substrate processing apparatus including a drying mechanism using a fluid mixture of purified water and a volatile organic solvent |
CN101561218B (zh) * | 2008-04-16 | 2010-12-08 | 富葵精密组件(深圳)有限公司 | 真空氮气烘箱 |
US20130081301A1 (en) * | 2011-09-30 | 2013-04-04 | Applied Materials, Inc. | Stiction-free drying of high aspect ratio devices |
CN105665339B (zh) * | 2016-02-17 | 2018-04-06 | 上海华力微电子有限公司 | 一种用于槽型湿法设备的干燥装置及干燥方法 |
JP2017157800A (ja) * | 2016-03-04 | 2017-09-07 | 東京エレクトロン株式会社 | 液処理方法、基板処理装置、及び記憶媒体 |
TWI645913B (zh) * | 2016-11-10 | 2019-01-01 | 辛耘企業股份有限公司 | 液體製程裝置 |
CN110307698B (zh) * | 2018-03-27 | 2020-10-23 | 创意电子股份有限公司 | 烘干设备 |
CN112420485B (zh) * | 2019-08-21 | 2023-03-31 | 长鑫存储技术有限公司 | 晶圆加工方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6401353B2 (en) * | 2000-03-08 | 2002-06-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate dryer |
CN1501439A (zh) * | 2002-11-18 | 2004-06-02 | 大日本网目版制造株式会社 | 基板处理方法、基板处理装置和基板处理*** |
JP3585199B2 (ja) * | 1997-03-31 | 2004-11-04 | 大日本スクリーン製造株式会社 | 基板処理装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5954911A (en) * | 1995-10-12 | 1999-09-21 | Semitool, Inc. | Semiconductor processing using vapor mixtures |
KR100205518B1 (ko) * | 1996-08-31 | 1999-07-01 | 구자홍 | 노광장치 및 노광방법 |
KR100366479B1 (ko) * | 1996-11-26 | 2004-03-20 | 주식회사 코오롱 | 태양광선 제어 필름 |
US5884640A (en) * | 1997-08-07 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for drying substrates |
DE10256696A1 (de) * | 2002-12-04 | 2004-06-24 | Mattson Wet Products Gmbh | Verfahren zum Trocknen von Substraten |
US7637029B2 (en) * | 2005-07-08 | 2009-12-29 | Tokyo Electron Limited | Vapor drying method, apparatus and recording medium for use in the method |
-
2006
- 2006-03-31 JP JP2006098132A patent/JP2007273758A/ja not_active Abandoned
-
2007
- 2007-03-05 TW TW096107437A patent/TWI369727B/zh active
- 2007-03-20 KR KR1020070027334A patent/KR100830011B1/ko active IP Right Grant
- 2007-03-28 CN CNB2007100914050A patent/CN100514555C/zh active Active
- 2007-03-29 US US11/693,429 patent/US20070227032A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3585199B2 (ja) * | 1997-03-31 | 2004-11-04 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US6401353B2 (en) * | 2000-03-08 | 2002-06-11 | Dainippon Screen Mfg. Co., Ltd. | Substrate dryer |
CN1501439A (zh) * | 2002-11-18 | 2004-06-02 | 大日本网目版制造株式会社 | 基板处理方法、基板处理装置和基板处理*** |
Also Published As
Publication number | Publication date |
---|---|
KR100830011B1 (ko) | 2008-05-15 |
TW200802571A (en) | 2008-01-01 |
CN101047116A (zh) | 2007-10-03 |
KR20070098532A (ko) | 2007-10-05 |
TWI369727B (en) | 2012-08-01 |
JP2007273758A (ja) | 2007-10-18 |
US20070227032A1 (en) | 2007-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: DAINIPPON SCREEN MFG. CO., LTD. Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD. Owner name: SCREEN GROUP CO., LTD. Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kyoto City, Kyoto, Japan Patentee after: Skilling Group Address before: Kyoto City, Kyoto, Japan Patentee before: DAINIPPON SCREEN MFG Co.,Ltd. Address after: Kyoto City, Kyoto, Japan Patentee after: DAINIPPON SCREEN MFG Co.,Ltd. Address before: Kyoto City, Kyoto, Japan Patentee before: Dainippon Screen Mfg. Co.,Ltd. |