CN100511731C - 倒装焊发光二极管芯片的制备方法 - Google Patents
倒装焊发光二极管芯片的制备方法 Download PDFInfo
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- CN100511731C CN100511731C CNB2004100276465A CN200410027646A CN100511731C CN 100511731 C CN100511731 C CN 100511731C CN B2004100276465 A CNB2004100276465 A CN B2004100276465A CN 200410027646 A CN200410027646 A CN 200410027646A CN 100511731 C CN100511731 C CN 100511731C
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- gallium nitride
- film
- metal
- conductive film
- type gallium
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2004100276465A CN100511731C (zh) | 2004-06-14 | 2004-06-14 | 倒装焊发光二极管芯片的制备方法 |
Applications Claiming Priority (1)
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CNB2004100276465A CN100511731C (zh) | 2004-06-14 | 2004-06-14 | 倒装焊发光二极管芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN1716645A CN1716645A (zh) | 2006-01-04 |
CN100511731C true CN100511731C (zh) | 2009-07-08 |
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Application Number | Title | Priority Date | Filing Date |
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CNB2004100276465A Expired - Fee Related CN100511731C (zh) | 2004-06-14 | 2004-06-14 | 倒装焊发光二极管芯片的制备方法 |
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CN (1) | CN100511731C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9130122B2 (en) | 2013-09-06 | 2015-09-08 | Industrial Technology Research Institute | Light emitting diode |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2135302A2 (en) * | 2007-03-08 | 2009-12-23 | Sensors For Medicine And Science, Inc. | Light emitting diode for harsh environments |
CN102347434B (zh) * | 2010-08-03 | 2014-12-10 | 上海蓝光科技有限公司 | 倒装结构的发光二极管芯片及制作方法 |
CN102315353B (zh) * | 2011-09-30 | 2013-05-22 | 安徽三安光电有限公司 | 一种倒装集成发光二极管及其制备方法 |
CN105355744B (zh) * | 2015-12-11 | 2017-10-31 | 厦门乾照光电股份有限公司 | 一种倒装蓝绿发光二极管芯片 |
CN107240624B (zh) * | 2017-05-08 | 2019-04-16 | 上海大学 | NiO复合薄膜、量子点发光器件及其制备和应用 |
US11349052B2 (en) * | 2019-02-05 | 2022-05-31 | Facebook Technologies, Llc | Bonding interface for hybrid TFT-based micro display projector |
CN114395747B (zh) * | 2021-12-24 | 2023-10-24 | 兰州空间技术物理研究所 | 一种高发射系数耐轰击二次电子发射薄膜结构与制备方法 |
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2004
- 2004-06-14 CN CNB2004100276465A patent/CN100511731C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9130122B2 (en) | 2013-09-06 | 2015-09-08 | Industrial Technology Research Institute | Light emitting diode |
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Publication number | Publication date |
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CN1716645A (zh) | 2006-01-04 |
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Owner name: SHENZHEN CITY FANGDA GUOKE OPTOELECTRONICS TECHNO Free format text: FORMER OWNER: FANGDA GROUP CO LTD Effective date: 20070810 |
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Effective date of registration: 20070810 Address after: 518055 Guangdong city of Shenzhen province Nanshan District Xili, Longjing Fangda Applicant after: Shenzhen Fangda Guoke Optical Electronic Technology Co., Ltd. Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xili, Longjing Fangda Applicant before: Fangda Group Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHENYANG FANGDA SEMICONDUCTOR LIGHTING CO., LTD. Free format text: FORMER OWNER: SHENZHEN FANGDA GUOKE PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20110908 |
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Free format text: CORRECT: ADDRESS; FROM: 518055 SHENZHEN, GUANGDONG PROVINCE TO: 110168 SHENYANG, LIAONING PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20110908 Address after: 110168 Shenyang Hunnan New District Wende Street No. 6 Patentee after: Shenzhen Fangda Guoke Optoelectronic Technology Co., Ltd. Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xili, Longjing Fangda Patentee before: Shenzhen Fangda Guoke Optical Electronic Technology Co., Ltd. |
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Granted publication date: 20090708 Termination date: 20130614 |