CN100508235C - Preparation method of phase storage unit device - Google Patents
Preparation method of phase storage unit device Download PDFInfo
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- CN100508235C CN100508235C CNB2004100157432A CN200410015743A CN100508235C CN 100508235 C CN100508235 C CN 100508235C CN B2004100157432 A CNB2004100157432 A CN B2004100157432A CN 200410015743 A CN200410015743 A CN 200410015743A CN 100508235 C CN100508235 C CN 100508235C
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- China
- Prior art keywords
- preparation
- memory unit
- phase
- change memory
- hearth electrode
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- 238000002360 preparation method Methods 0.000 title claims description 18
- 238000003860 storage Methods 0.000 title description 5
- 230000015654 memory Effects 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 13
- 239000012782 phase change material Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000007772 electrode material Substances 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 7
- 239000010432 diamond Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract 1
- 239000003292 glue Substances 0.000 abstract 1
- 238000003825 pressing Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004080 punching Methods 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 150000001786 chalcogen compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 chalcogenide compound Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Abstract
The invention relates to a method for manufacturing phase change memory unit device, which belongs to microelectronic technology field. The character lies in: the bottom electrode material is deposited on the substrate material at first, and then the piezoelectric media material, then using pressing head with triangular pyramid, cone or other shape, made up of diamond, adamant to drill a hole on the film, making the small hole penetrate the electric media layer, the pin head is connected with the bottom material. Following, a thin layer of phase change material is deposited, the surface is polished. Then the photoetching glue is painted with stripping technology, carrying on exposure and development, thus the small hole is extruded out, then it is deposited on the electrode material, then the product can be produced after degumming. The merits lie in: the contacting area between the phase change material and the substrate electrode is small, it reaches several hundreds of nanometers, thus a small current can generate a large amount of heat, and the phase change can be carried on in a short period. The device made with the invention has small energy consumption, short responding time; the invention can upgrade the performance of device greatly.
Description
Technical field
The present invention relates to a kind of preparation method of phase-change memory unit element, belong to microelectronics technology.
Background technology
Before more than 80 year, people have found the chalcogen compound phase transformation and the variation of the conductivity that causes for the first time.The 1950's, chalcogen compound alloy crystalline state and amorphous semiconductor property are widely studied.To early 1960s, have and report and new reversible transition material and programmable optical electric device have occurred, these device purposes are the not volatile memory that are used for computer.These reports have stimulated the broad research in related application field, and laser induced chalcogen compound alloy causes the compact disc recordable of phase transformation to enter commodity production.
Now, in the random asccess memory, dynamic random access memory (DRAM), static random access memory (SRAM), flash memory (Flash) dominate.But along with development of semiconductor, DRAM does not more and more satisfy the requirement of development.At present, scientist is seeking alternative articles for use.Main candidate has: magnetic storage (MRAM), ferroelectric memory (FeRAM), phase transition storage (PRAM) etc.And compare and other memories, PRAM has some advantages: data are volatibility not, the superelevation integrated level, and Low-voltage Low-power, switching rate height, non-damage read, and anti-irradiation is up to 10
12Erasable number of times etc.
And in recent years, along with read-write CD extensive use, the understanding of chalcogen compound alloy is deepened; Understanding to the device performance details is further deepened; Photoetching technique further develops, and lithographic dimensionedly also dwindles greatly.This series of development makes that adopting the phase transformation semiconductor storage unit to prepare practical high-performance memory element becomes possibility.Therefore, have reason to believe that the PRAM chip with the ability that can replace Flash, DRAM and SRAM will come into the market to the more than ten years coming years.
Yet at present the size of phase transition storage also is in tens above scopes of micron, and its superiority only reaches nanoscale in size and could embody to greatest extent.The preparation of nanometer electronic device mainly is subjected to want technologic restriction, as exposure technique, and lithographic technique etc.Mainly contain electron beam exposure (EB) for the exposure technique solution, focused ion beam exposure (FIB), ((1) J.Kedzierski, P.Xuan such as spacer technology, E.Anderson, J.Bokor, T.-J.King, and C.Hu, Complementary silicdesource/drain thin-body MOSFET ' s for the 20 nm gate length regime, in IEDMTech.Dig., 2000.pp.57-60. (2) Yang-Kyu Choi, Tsu-Jae King, Member, IEEE, and Chenming Hu, Fellow, IEEE, IEEE Transactions On Electron Devices, Vol.49 No.3,436.).Problem is complex process, the cost costliness.Whether can be with convenient and succinct method is prepared nano level contact-making surface, thus the response speed of device improved, reduce power consumption.This is the target that people pursue.
Summary of the invention
The invention provides a kind of method for preparing phase-change memory unit element.Its concrete preparation process is:
(1) cleaning deposition hearth electrode film (BE) on the back substrate material, thickness is at 100nm-300nm.Follow deposit dielectric material (ILD), thickness is 200-300mm.Its effect is to stop heat conduction as dielectric substance, thereby reduces the influence between each device, improves its service behaviour.Backing material can be Si, SiO
2In a kind of.
(2) by mechanical means, get very little hole on dielectric substance, hole depth is slightly larger than dielectric layer thickness, makes the hole penetrate dielectric and contacts with the hearth electrode material.The used pressure head that punches is triangular pyramid or taper shape, and it is to be made by diamond or diamond.The head meter area is less than 1um
2
(3) mainly use the polynary phase-change material of magnetron sputtering deposition.Its thickness is at 20nm-50nm, and then with surface finish, phase-change material and hearth electrode contact-making surface are very little, can reach the hundreds of nanometer.
(4) at last with peeling off (liftoff) technology, promptly gluing exposes, and develops, and aperture is come out.Deposit upper electrode material then, thickness is at 300nm-400nm.Remove photoresist, just can obtain simple unit component.
Described dielectric substance is mainly Si
3N
4Or SiO
2:
Described gluing is general commercially available photoresist, as 1818,6809 etc.
Described hearth electrode material can be W, Li, and one or both among the Pt etc., gross thickness is between 100nm-300nm.Can increase between hearth electrode and backing material really and adhesive force, can be to add a barrier layer between substrate and hearth electrode, barrier layer thickness is 10-50nm, material is TiN.
Crucial part of the present invention obtains aperture with regard to being with the method for mechanical punching.Because consider from the device performance aspect, must make electrode and phase-change material contact-making surface little, can reduce power consumption greatly like this, improve response speed.But be subjected to the restriction of semiconductor technological condition up till now, be difficult to reach the requirement of tens nanometers.Though and the method for etching also can realize, the terminal point of etching is difficult to control.Use mechanical punching among the present invention, as long as know dielectric layer thickness, and the shape of pressure head, just can obtain the aperture of different size.Because phase-change material and hearth electrode contact-making surface are very little, can reach the hundreds of nanometer, so very little electric current just can produce very big heat, phase-change material just can be undergone phase transition in very short time.So, have less power consumption with the device of method provided by the invention preparation, the very short response time, improve a lot for the performance of device.For laser drilling, though can obtain small size, be shaped as cylindrically, the sediment phase change material has certain problem during top electrode.As form the cavity, do not reach etc.Thereby cause damage to device.
Description of drawings
Fig. 1 is concrete preparation technology's schematic diagram of cell phase change memory
(a) on backing material, deposit hearth electrode material and dielectric substance successively
(b) punch on dielectric substance by mechanical means
(c) sediment phase change material, surface finish
(d) gluing, exposure is developed
(e) deposition upper electrode material
(a) remove photoresist, peel off, obtain device
Among the figure: 1-base substrate, 2-hearth electrode, 3-dielectric, 4-phase-change material, 5-photoresist, 6-top electrode
Embodiment
The preparation method of cell phase change memory provided by the invention, 1 its specific embodiment is in conjunction with the accompanying drawings:
(1) silicon chip of selection p type (100) with acetone ultrasonic cleaning 5 minutes, to remove the greasy dirt that sticks on the silicon chip, is used deionized water rinsing earlier afterwards.Silicon chip is immersed in H
2O:H
2O
2: NH
4Boil in the mixed liquor of OH=5:1.5:1 and boil 10 minutes, cooling back deionized water rinsing; Again silicon chip is being immersed in H
2O:H
2O
2: boil in the mixed liquor of HCl=5:1.5:1 and boil 10 minutes, use deionized water rinsing behind the natural cooling.With 4% HF silicon chip is carried out processed at last.
(2) deposited barrier layer, the preparation of hearth electrode and dielectric layer.On cleaned silicon chip, successively prepare TiN, W film and SiO with magnetron sputtering method
2Layer, thickness is respectively: 20nm, 250nm and 200nm; Magnetron sputtering base vacuum degree is 10
-7Torr, sputter vacuum degree is 0.18Pa, sputtering power 300W, underlayer temperature are 70 ℃.Use TiN as the barrier layer here, can increase adhesive force, improve device performance.(Fig. 1 (a))
(3) mechanical punching.With diamond indenter at SiO
2Punching on the layer, degree of depth 250nm.Guarantee that the hole point contacts with the W layer.(Fig. 1 (b))
(4) magnetron sputtering deposition thickness is the chalcogenide compound material of 50nm, only needs very thin one deck, thickness 50nm.(Fig. 1 (c)), its deposition process parameters is with above-mentioned step (2); Make the contact-making surface of chalcogenide compound and hearth electrode W reach 500 nanometers.
(5) gluing by steps such as exposure imagings, exposes aperture, is using magnetron sputtering deposition top electrode W (Fig. 1 (d), (e), (f)) then, and its technology is identical with step (2), removes photoresist at last and peels off, and lead-in wire just can obtain unit component.
Select SiO for use
2Substrate, hearth electrode are W and Pt, and gross thickness 250nm, dielectric substance are Si
3N
4, thickness is 300nm; With diamond penetrator at Si
3N
4Last punching, hole depth 320nm makes the hole point contact with hearth electrode.All the other conditions are with embodiment 1.
Claims (9)
1. the preparation method of a phase-change memory unit element comprises the cleaning of backing material, it is characterized in that:
(1) on the substrate after the cleaning, deposits hearth electrode material and dielectric substance successively;
(2) punch at dielectric layer by mechanical pressure head then, mechanical pressure head is triangular pyramid or taper shape, and the degree of depth in the hole of being beaten makes the hole point contact with hearth electrode greater than the dielectric layer degree of depth;
(3) deposit polynary phase-change material at last, by lift-off technology aperture is come out after the surface finish, deposit top electrode again.
2. by the preparation method of the described phase-change memory unit element of claim 1, it is characterized in that described hearth electrode material be among W, Li or the Pt one or both; Described dielectric substance is Si
3N
4Or SiO
2Backing material is Si or SiO
2
3. by the preparation method of claim 1 or 2 described phase-change memory unit elements, it is characterized in that described hearth electrode thickness at 100-300nm, the dielectric substance thickness of deposition is 200-300nm.
4. by the preparation method of the described phase-change memory unit element of claim 1, it is characterized in that described mechanical pressure head is to be made by diamond or diamond, the head meter area is less than 1 μ m
2
5. by the preparation method of the described phase-change memory unit element of claim 1, the deposition that it is characterized in that polynary phase-change material is to use magnetically controlled sputter method, and thickness is at 20-50nm; Phase-change material and hearth electrode contact-making surface are the hundreds of nanometer.
6. by the preparation method of the described phase-change memory unit element of claim 1, it is characterized in that depositing top electrode thickness 300-400nm behind the lift-off technology.
7. by the preparation method of the described phase-change memory unit element of claim 1, it is characterized in that on the substrate after the cleaning deposition hearth electrode or dielectric substance are to use magnetically controlled sputter method.
8. by the preparation method of claim 5 or 7 described phase-change memory unit elements, it is characterized in that magnetron sputtering base vacuum degree is lower than 10
-7Torr, sputter vacuum degree is 0.18Pa, underlayer temperature is 70 ℃.
9. by the preparation method of the described phase-change memory unit element of claim 1, the cleaning that it is characterized in that backing material is to use acetone ultrasonic cleaning 5 minutes earlier, to remove the greasy dirt that sticks on the silicon chip, uses deionized water rinsing afterwards; Again silicon chip is immersed in H
2O:H
2O
2: boil in the mixed liquor of NH4OH=5:1.5:1 and boil 10 minutes, cooling back deionized water rinsing; Again silicon chip is being immersed in H at last
2O:H
2O
2: boil in the mixed liquor of HCI=5:1.5:1 and boil 10 minutes, use deionized water rinsing behind the natural cooling; HF with 4% carries out processed to silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100157432A CN100508235C (en) | 2004-01-09 | 2004-01-09 | Preparation method of phase storage unit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100157432A CN100508235C (en) | 2004-01-09 | 2004-01-09 | Preparation method of phase storage unit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1556550A CN1556550A (en) | 2004-12-22 |
| CN100508235C true CN100508235C (en) | 2009-07-01 |
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|---|---|---|---|
| CNB2004100157432A Expired - Lifetime CN100508235C (en) | 2004-01-09 | 2004-01-09 | Preparation method of phase storage unit device |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100442566C (en) * | 2005-01-19 | 2008-12-10 | 财团法人工业技术研究院 | Phase-change storage and its manufacturing method |
| CN101364567B (en) * | 2007-08-06 | 2011-09-14 | 上海市纳米科技与产业发展促进中心 | Preparation of nano-scale phase-changing memory cell array |
| CN101504948B (en) * | 2008-02-05 | 2011-04-06 | 财团法人工业技术研究院 | Hollow pen tip like structure, apparatus comprising the same, and manufacturing method therefor |
| CN108735895B (en) * | 2017-04-14 | 2022-04-01 | 上海磁宇信息科技有限公司 | Magnetic random access memory bottom electrode contact and method of forming the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034841A (en) * | 1989-02-04 | 1989-08-16 | 梁植林 | The manufacture method of printed substrate |
| US6586761B2 (en) * | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
| CN1449062A (en) * | 2002-04-04 | 2003-10-15 | 惠普公司 | Composite electrode having low heat consumption and small contact area for memory device of phase-changing medium |
-
2004
- 2004-01-09 CN CNB2004100157432A patent/CN100508235C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034841A (en) * | 1989-02-04 | 1989-08-16 | 梁植林 | The manufacture method of printed substrate |
| US6586761B2 (en) * | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
| CN1449062A (en) * | 2002-04-04 | 2003-10-15 | 惠普公司 | Composite electrode having low heat consumption and small contact area for memory device of phase-changing medium |
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| Publication number | Publication date |
|---|---|
| CN1556550A (en) | 2004-12-22 |
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