CN100505319C - 栅控二极管及其形成方法 - Google Patents
栅控二极管及其形成方法 Download PDFInfo
- Publication number
- CN100505319C CN100505319C CNB2007100018433A CN200710001843A CN100505319C CN 100505319 C CN100505319 C CN 100505319C CN B2007100018433 A CNB2007100018433 A CN B2007100018433A CN 200710001843 A CN200710001843 A CN 200710001843A CN 100505319 C CN100505319 C CN 100505319C
- Authority
- CN
- China
- Prior art keywords
- gate control
- control diode
- semiconductor layer
- active area
- trench electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims description 56
- 239000004020 conductor Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000011049 filling Methods 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Dram (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (24)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/334,170 US7385251B2 (en) | 2006-01-18 | 2006-01-18 | Area-efficient gated diode structure and method of forming same |
US11/334,170 | 2006-01-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101005099A CN101005099A (zh) | 2007-07-25 |
CN100505319C true CN100505319C (zh) | 2009-06-24 |
Family
ID=38262376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100018433A Expired - Fee Related CN100505319C (zh) | 2006-01-18 | 2007-01-05 | 栅控二极管及其形成方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7385251B2 (zh) |
JP (1) | JP5089163B2 (zh) |
CN (1) | CN100505319C (zh) |
TW (1) | TW200742095A (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7385251B2 (en) * | 2006-01-18 | 2008-06-10 | International Business Machines Corporation | Area-efficient gated diode structure and method of forming same |
JP2007266569A (ja) * | 2006-02-28 | 2007-10-11 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
KR100816733B1 (ko) * | 2006-06-29 | 2008-03-25 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 게이트 제조 방법 |
KR100763337B1 (ko) * | 2006-10-02 | 2007-10-04 | 삼성전자주식회사 | 매립 게이트 라인을 갖는 반도체소자 및 그 제조방법 |
US8232624B2 (en) * | 2009-09-14 | 2012-07-31 | International Business Machines Corporation | Semiconductor structure having varactor with parallel DC path adjacent thereto |
US8643070B2 (en) * | 2010-12-08 | 2014-02-04 | Shu-Ming Chang | Chip package and method for forming the same |
CN102610659B (zh) * | 2011-01-19 | 2014-08-13 | 上海华虹宏力半导体制造有限公司 | 电压控制变容器及其制备方法 |
US20140232451A1 (en) * | 2013-02-19 | 2014-08-21 | Qualcomm Incorporated | Three terminal semiconductor device with variable capacitance |
US10096696B2 (en) * | 2014-06-03 | 2018-10-09 | Micron Technology, Inc. | Field effect transistors having a fin |
JP6635900B2 (ja) * | 2016-09-13 | 2020-01-29 | 株式会社東芝 | 半導体装置 |
KR102316293B1 (ko) | 2017-09-18 | 2021-10-22 | 삼성전자주식회사 | 반도체 장치 |
CN108962880B (zh) * | 2018-07-17 | 2024-05-03 | 昆山思特威集成电路有限公司 | 一种高密度多层堆叠mim电容器及像素电路与成像装置 |
US10680087B2 (en) | 2018-09-05 | 2020-06-09 | Nxp B.V. | Gated diode having fingers with elevated gates |
WO2020062275A1 (zh) | 2018-09-30 | 2020-04-02 | 华为技术有限公司 | 栅控二极管及芯片 |
CN111312802B (zh) * | 2020-02-27 | 2022-01-28 | 电子科技大学 | 低开启电压和低导通电阻的碳化硅二极管及制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5978259A (en) * | 1997-07-22 | 1999-11-02 | Semicon Co., Ltd. | Semiconductor memory device |
CN1627435A (zh) * | 2003-12-11 | 2005-06-15 | 国际商业机器公司 | 栅控二极管存储器单元及其写入方法 |
CN1691204A (zh) * | 2004-01-05 | 2005-11-02 | 国际商业机器公司 | 使用栅控二极管的存储器单元及其使用方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5225697A (en) * | 1984-09-27 | 1993-07-06 | Texas Instruments, Incorporated | dRAM cell and method |
US4713678A (en) * | 1984-12-07 | 1987-12-15 | Texas Instruments Incorporated | dRAM cell and method |
US4649625A (en) * | 1985-10-21 | 1987-03-17 | International Business Machines Corporation | Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
JPH08222710A (ja) * | 1995-02-17 | 1996-08-30 | Mitsubishi Electric Corp | 半導体装置 |
US5793075A (en) * | 1996-07-30 | 1998-08-11 | International Business Machines Corporation | Deep trench cell capacitor with inverting counter electrode |
US5981332A (en) * | 1997-09-30 | 1999-11-09 | Siemens Aktiengesellschaft | Reduced parasitic leakage in semiconductor devices |
US8324667B2 (en) | 2004-01-05 | 2012-12-04 | International Business Machines Corporation | Amplifiers using gated diodes |
US7385251B2 (en) * | 2006-01-18 | 2008-06-10 | International Business Machines Corporation | Area-efficient gated diode structure and method of forming same |
-
2006
- 2006-01-18 US US11/334,170 patent/US7385251B2/en not_active Expired - Fee Related
- 2006-12-26 JP JP2006348919A patent/JP5089163B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-05 CN CNB2007100018433A patent/CN100505319C/zh not_active Expired - Fee Related
- 2007-01-15 TW TW096101396A patent/TW200742095A/zh unknown
-
2008
- 2008-03-19 US US12/051,116 patent/US7884411B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5978259A (en) * | 1997-07-22 | 1999-11-02 | Semicon Co., Ltd. | Semiconductor memory device |
CN1627435A (zh) * | 2003-12-11 | 2005-06-15 | 国际商业机器公司 | 栅控二极管存储器单元及其写入方法 |
CN1691204A (zh) * | 2004-01-05 | 2005-11-02 | 国际商业机器公司 | 使用栅控二极管的存储器单元及其使用方法 |
Also Published As
Publication number | Publication date |
---|---|
US7385251B2 (en) | 2008-06-10 |
TW200742095A (en) | 2007-11-01 |
JP5089163B2 (ja) | 2012-12-05 |
US20070164359A1 (en) | 2007-07-19 |
US7884411B2 (en) | 2011-02-08 |
US20080164507A1 (en) | 2008-07-10 |
JP2007194622A (ja) | 2007-08-02 |
CN101005099A (zh) | 2007-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100505319C (zh) | 栅控二极管及其形成方法 | |
CN101681909B (zh) | 垂直电流受控绝缘体上硅(soi)器件及其形成方法 | |
US10068897B2 (en) | Shallow trench isolation area having buried capacitor | |
US8119474B2 (en) | High performance capacitors in planar back gates CMOS | |
CN101350351B (zh) | 半导体结构及其形成方法 | |
CN100485961C (zh) | 具有增强的屏蔽结构的金属氧化物半导体器件 | |
US8390068B2 (en) | Electrostatic discharge protection device and method of fabricating same | |
KR101210014B1 (ko) | Mos 장치, mos 장치 제조 방법 및 집적 회로 | |
TWI409946B (zh) | 半導體裝置及其形成方法 | |
CN103503140B (zh) | 绝缘体上硅芯片上的独立电压控制的硅区域 | |
US20040262679A1 (en) | Semiconductor storage device and semiconductor integrated circuit | |
US8115273B2 (en) | Deep trench isolation structures in integrated semiconductor devices | |
US20200006489A1 (en) | MOSFET Having Drain Region Formed Between Two Gate Electrodes with Body Contact Region and Source Region Formed in a Double Well Region | |
US7038273B2 (en) | Semiconductor device | |
CN113053943A (zh) | 半导体结构及其形成方法 | |
CN112928110A (zh) | 半导体器件 | |
US20050280063A1 (en) | Microelectronic element having trench capacitors with different capacitance values | |
CN218244271U (zh) | 存储器单元和电子设备 | |
CN112786600B (zh) | 三维存储器、电路芯片及其制备方法 | |
KR101023079B1 (ko) | 반도체 소자 및 그의 제조 방법 | |
KR20210074159A (ko) | 정전기 방전 보호 소자 및 이를 포함하는 반도체 장치 | |
JPS63100776A (ja) | 半導体装置 | |
JPH02369A (ja) | 半導体装置 | |
JPS62120067A (ja) | ダイナミツクランダムアクセスメモリセル | |
JP3421693B2 (ja) | 単結晶薄膜形半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171130 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171130 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090624 Termination date: 20190105 |