CN100504750C - 闪存控制器 - Google Patents
闪存控制器 Download PDFInfo
- Publication number
- CN100504750C CN100504750C CNB2007100736551A CN200710073655A CN100504750C CN 100504750 C CN100504750 C CN 100504750C CN B2007100736551 A CNB2007100736551 A CN B2007100736551A CN 200710073655 A CN200710073655 A CN 200710073655A CN 100504750 C CN100504750 C CN 100504750C
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- Prior art keywords
- flash
- instruction
- flash memory
- data
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000015654 memory Effects 0.000 claims abstract description 48
- 230000005540 biological transmission Effects 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 12
- 230000008054 signal transmission Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 abstract description 3
- 230000006870 function Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000005055 memory storage Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100736551A CN100504750C (zh) | 2007-03-23 | 2007-03-23 | 闪存控制器 |
TW96136199A TW200915082A (en) | 2007-03-23 | 2007-09-28 | Flash memory controller |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007100736551A CN100504750C (zh) | 2007-03-23 | 2007-03-23 | 闪存控制器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101046725A CN101046725A (zh) | 2007-10-03 |
CN100504750C true CN100504750C (zh) | 2009-06-24 |
Family
ID=38771376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100736551A Active CN100504750C (zh) | 2007-03-23 | 2007-03-23 | 闪存控制器 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN100504750C (zh) |
TW (1) | TW200915082A (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101740102B (zh) * | 2008-11-11 | 2014-03-26 | 西安奇维测控科技有限公司 | 一种多通道闪存芯片阵列结构及其写入和读出方法 |
US20100318720A1 (en) * | 2009-06-16 | 2010-12-16 | Saranyan Rajagopalan | Multi-Bank Non-Volatile Memory System with Satellite File System |
CN101901116A (zh) * | 2010-07-26 | 2010-12-01 | 邓昕岳 | 一种将小容量nand flash芯片扩展成大容量模块的方法 |
CN102117243A (zh) * | 2010-12-29 | 2011-07-06 | 杭州晟元芯片技术有限公司 | 一种在Flash存储器中高效的使用软件断点调试的方法 |
CN102591823A (zh) * | 2011-01-17 | 2012-07-18 | 上海华虹集成电路有限责任公司 | 一种具有指令队列功能的Nandflash控制器 |
TWI454911B (zh) * | 2011-10-12 | 2014-10-01 | Phison Electronics Corp | 資料寫入方法、記憶體控制器與記憶體儲存裝置 |
CN102799391B (zh) * | 2012-06-14 | 2015-05-27 | 记忆科技(深圳)有限公司 | 一种闪存控制器及其控制方法、闪存存储设备 |
CN102768647B (zh) * | 2012-06-14 | 2015-11-25 | 记忆科技(深圳)有限公司 | 一种闪存控制器及其控制方法、闪存存储设备 |
CN105320472A (zh) * | 2015-12-04 | 2016-02-10 | 上海斐讯数据通信技术有限公司 | 一种大容量NOR Flash存储芯片及其扩展方法 |
CN105912307B (zh) * | 2016-04-27 | 2018-09-07 | 浪潮(北京)电子信息产业有限公司 | 一种Flash控制器数据处理方法及装置 |
CN109977070A (zh) * | 2017-12-27 | 2019-07-05 | 北京兆易创新科技股份有限公司 | 一种芯片控制方法和装置 |
CN114090480B (zh) * | 2022-01-17 | 2022-04-22 | 英韧科技(南京)有限公司 | 主控内嵌式指令和数据记录装置 |
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2007
- 2007-03-23 CN CNB2007100736551A patent/CN100504750C/zh active Active
- 2007-09-28 TW TW96136199A patent/TW200915082A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN101046725A (zh) | 2007-10-03 |
TW200915082A (en) | 2009-04-01 |
TWI349857B (zh) | 2011-10-01 |
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Owner name: MEMORIGHT MEMORITECH (WUHAN) CO., LTD. Free format text: FORMER OWNER: MEMORIGHT MEMORITECH (SHENZHEN) CO., LTD. Effective date: 20101110 |
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Address after: 430074 Hubei city of Wuhan province East Lake New Technology Development Zone Road No. two high Guan Nan Industrial Park Building No. two West 3 floor Patentee after: MEMORIGHT (WUHAN) Co.,Ltd. Address before: 430074 Hubei city of Wuhan province Kuanshan Road, Optics Valley software park three building C3 room 301-303 building Patentee before: MEMORIGHT (WUHAN)CO.,LTD. |
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Address after: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee after: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Address before: 430074 west 3 floor, two Guan Nan Industrial Park, two new road, Wuhan, Hubei, East Lake. Patentee before: MEMORIGHT (WUHAN) Co.,Ltd. |
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Denomination of invention: flash memory controller Effective date of registration: 20220120 Granted publication date: 20090624 Pledgee: Wuhan area branch of Hubei pilot free trade zone of Bank of China Ltd. Pledgor: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. Registration number: Y2022420000020 |
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Address after: 430000 west of 2-3 / F, No.2 factory building, Guannan Industrial Park, No.1 Gaoxin 2nd Road, Wuhan Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: Zhiyu Technology Co.,Ltd. Address before: 430070 Wuhan, Hubei Wuhan East Lake New Technology Development Zone, high-tech two Road No. 1 South Guan Industrial Park 2 factory 2-3 floor West. Patentee before: EXASCEND TECHNOLOGY (WUHAN) CO.,LTD. |