CN100499118C - Heavy current three-phase rectification power electronic device module - Google Patents
Heavy current three-phase rectification power electronic device module Download PDFInfo
- Publication number
- CN100499118C CN100499118C CNB2005100386879A CN200510038687A CN100499118C CN 100499118 C CN100499118 C CN 100499118C CN B2005100386879 A CNB2005100386879 A CN B2005100386879A CN 200510038687 A CN200510038687 A CN 200510038687A CN 100499118 C CN100499118 C CN 100499118C
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- silicon
- insulation board
- device module
- albronze
- electronic device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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Abstract
The invention relates to a large current three-phase rectifying power electron device module. The conductor in the silicon diode is flexible conduit; the insulating plate is a DBC plate with three layers of compound structure, wherein the upper layer and the lower layer are aluminum copper alloy and the middle layer is insulating layer aluminum nitride; it uses a plurality of flexible conduits to connect the silicon chip and the insulating plate; one end of the flexible conduit is frit on the aluminum copper alloy of the insulating plate and the other end is frit on the silicon chip; when power on the current, the heat generated by the module can transmit to the copper base so that the deformation of the DBC insulating plate is small; the limit current of the three phase rectifying power electron device module can achieve to 2000A-3500A.
Description
Technical field
The present invention relates to a kind of three-phase rectification power electronic device module.
Background technology
The rated current of the three-phase rectification power electronic device module that generally uses all below 1000A, also can't be produced at big electric current more than the 1000A and the especially big electric current three phase rectifier module more than the 3000A for rated current at present.The existing following three phase rectifier module of 1000A all comprises six silicon diodes, they are pressed rectified three-phase circuit and connect, connected mode as shown in Figure 2, promptly by after three groups of series connection (ad, be, cf), again by after the negative electrode parallel connection of three diodes of abc the positive pole of DC power supply, the anode of three diodes of def in parallel the negative pole of DC power supply.Each silicon diode is by copper heating panel; insulation board; electrode slice; the protective layer molybdenum sheet; silicon and conductor are formed; silicon; the protective layer molybdenum sheet; electrode slice; insulation board; all be sintered into one between the copper heating panel by silver-colored tin; rigidly connected between silicon and the insulation board by whole copper sheet conductor; insulation board is the beryllium oxide plate that top and bottom are coated with nickel dam; beryllium oxide not only has very strong toxicity; normal phase contact damages people's cognition; and its coefficient of expansion and silicon differ greatly; beryllium oxide and silicon are crossed welding manner with the conductor dbus of rigidity to be coupled together; its deflection is very big after the big electric current of feeding is heated; very easily draw the damage silicon; cause voltage breakdown; in order to overcome this deficiency; people have specially set up the protective layer molybdenum sheet that can reduce insulation board temperature distortion amount at the beryllium oxide upper surface; even so; the magnitude of current that can increase is limited; when the electric current that passes through is increased to 1000A when above; the protective layer molybdenum sheet is then inoperative, and the three phase rectifier electric apparatus spare module of this structure can't realize to big sense of current development.Fettered the range of application of three phase rectifier electric apparatus spare module, incompatibility modern power electronic industrial expansion.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of heavy current three-phase rectification power electronic device module.
Heavy current three-phase rectification power electronic device module of the present invention; comprise six silicon diodes; be formed by connecting by rectified three-phase circuit; each silicon diode is by copper heating panel 1; insulation board 2; electrode slice 3; protective layer molybdenum sheet 4; silicon 5 and conductor 6 are formed; silicon 5; protective layer molybdenum sheet 4; electrode slice 3; all be sintered into one between insulation board 2 and the copper heating panel 1 by silver-colored tin; described conductor 6 is soft lead; described insulation board 2 is the DBC plate; the DBC plate is an albronze; aluminium nitride; the albronze composite board; it is a three-decker; levels is albronze 21; the centre is an aluminium nitride insulating barrier 22; link to each other by some soft leads between silicon 5 and the insulation board 2, an end sintering of soft lead is on the albronze 21 on DBC plate upper strata, and other end sintering is on silicon 5.
Described soft lead is silver line.
Owing to insulation board is changed into the DBC of three-decker by the beryllium oxide insulating barrier, insulating barrier wherein is an aluminium nitride, it not only has excellent insulation property, and avirulence, can not produce any injury to human body, albronze on the DBC insulation board not only has good conduction heat transfer property, and thermal coefficient of expansion is little, and its deflection is less after the big electric current of feeding is heated; Has excellent welding performance simultaneously; Replace integral type copper sheet conductor with some soft leads, can eliminate deflection because of the deflection of insulation board DBC after being heated and silicon differs and draws the phenomenon of damage silicon, completely cut off mutual influence by soft lead between the two, the limiting current that can bear of the three-phase rectification power electronic device module of this structure can reach 2000A～3500A.
Description of drawings:
Fig. 1 is the structural representation of three-phase rectification power electronic device module;
Fig. 2 is rectified three-phase circuit figure;
Fig. 3 is the structural representation of silicon;
Among the figure: the copper heating panel of 1-; The 2-insulation board; The 3-electrode slice; 4-protective layer molybdenum sheet; The 5-silicon; The 6-conductor;
Embodiment:
Below in conjunction with description of drawings the specific embodiment of the present invention:
Heavy current three-phase rectification power electronic device module of the present invention; comprise six silicon diodes; they are formed by connecting by rectified three-phase circuit; each silicon diode is by copper heating panel 1; insulation board 2; electrode slice 3; protective layer molybdenum sheet 4; silicon 5 and conductor 6 are formed; silicon 5; protective layer molybdenum sheet 4; electrode slice 3; all be sintered into one between insulation board 2 and the copper heating panel 1 by silver-colored tin; described conductor 6 is soft filamentary silver lead; described insulation board 2 is the DBC plate; the DBC plate is an albronze; aluminium nitride; the albronze composite board; it is a three-layer composite structure; on; lower floor is albronze 21; albronze 21 can conduct electricity and have good solderability; the centre is an aluminium nitride insulating barrier 22; link to each other by some soft filamentary silver leads between silicon 5 and the insulation board 2; one end sintering of soft filamentary silver lead is on the albronze 21 of insulation board 2, and other end sintering is on silicon 5.
In last example, the material of soft lead is the available silver alloy also.
Claims (2)
1; a kind of heavy current three-phase rectification power electronic device module; comprise six silicon diodes; be formed by connecting by rectified three-phase circuit; silicon diode is by copper heating panel (1); insulation board (2); electrode slice (3); protective layer molybdenum sheet (4); silicon (5) and conductor (6) are formed; silicon (5); protective layer molybdenum sheet (4); electrode slice (3); all be sintered into one between insulation board (2) and the copper heating panel (1) by silver-colored tin; it is characterized in that: described conductor (6) is made up of some soft leads; described insulation board (2) is the DBC plate; the DBC plate is an albronze; aluminium nitride; the albronze composite board; it is a three-decker; levels is albronze (21); the centre is aluminium nitride insulating barrier (22); link to each other by some soft leads between silicon (5) and the insulation board (2); one end sintering of soft lead is on the albronze (21) on DBC plate upper strata, and other end sintering is on silicon (5).
2, according to the described heavy current three-phase rectification power electronic device module of claim 1, it is characterized in that: the material of soft lead is argent or silver alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100386879A CN100499118C (en) | 2005-03-28 | 2005-03-28 | Heavy current three-phase rectification power electronic device module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100386879A CN100499118C (en) | 2005-03-28 | 2005-03-28 | Heavy current three-phase rectification power electronic device module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1841729A CN1841729A (en) | 2006-10-04 |
| CN100499118C true CN100499118C (en) | 2009-06-10 |
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ID=37030660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100386879A Active CN100499118C (en) | 2005-03-28 | 2005-03-28 | Heavy current three-phase rectification power electronic device module |
Country Status (1)
| Country | Link |
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| CN (1) | CN100499118C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179055B (en) * | 2007-12-14 | 2010-10-06 | 江苏宏微科技有限公司 | Semi-conductor power module and dissipating heat method thereof |
| CN101630676B (en) * | 2009-04-02 | 2011-05-11 | 嘉兴斯达微电子有限公司 | Novel isolated gate bipolar transistor module distributed with direct coated copper base plates |
| CN102560488B (en) * | 2012-02-02 | 2014-04-30 | 天津大学 | DBC (Direct Bonded Copper) substrate surface treatment process based on nano-silver soldering paste connecting chip |
| CN103795272A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Three-phase rectifier bridge power module |
-
2005
- 2005-03-28 CN CNB2005100386879A patent/CN100499118C/en active Active
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| Publication number | Publication date |
|---|---|
| CN1841729A (en) | 2006-10-04 |
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| C06 | Publication | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Changzhou Ruihua Power Electronic Devices Co., Ltd. Assignor: Chen Xingzhong|Yan Shufang Contract fulfillment period: 2009.6.25 to 2025.3.27 contract change Contract record no.: 2009320001100 Denomination of invention: Heavy current three-phase rectification power electronic device module Granted publication date: 20090610 License type: Exclusive license Record date: 2009.7.13 |
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| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2009.6.25 TO 2025.3.27; CHANGE OF CONTRACT Name of requester: CHANGZHOU RUNHUA POWER ELECTRONIC DEVICES CO., LTD Effective date: 20090713 |