CN100494517C - Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 - Google Patents
Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 Download PDFInfo
- Publication number
- CN100494517C CN100494517C CNB2007101138428A CN200710113842A CN100494517C CN 100494517 C CN100494517 C CN 100494517C CN B2007101138428 A CNB2007101138428 A CN B2007101138428A CN 200710113842 A CN200710113842 A CN 200710113842A CN 100494517 C CN100494517 C CN 100494517C
- Authority
- CN
- China
- Prior art keywords
- crystal
- lnvo
- self
- laser
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 191
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 40
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 30
- 229910052769 Ytterbium Inorganic materials 0.000 claims abstract description 24
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 12
- 229910052765 Lutetium Inorganic materials 0.000 claims abstract description 12
- 238000005086 pumping Methods 0.000 claims abstract description 8
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical group [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 15
- 229910009372 YVO4 Inorganic materials 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 13
- 238000005498 polishing Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000007599 discharging Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- -1 Re3+ Substances 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 31
- 238000010521 absorption reaction Methods 0.000 abstract description 22
- 229920006395 saturated elastomer Polymers 0.000 abstract description 10
- 229910052727 yttrium Inorganic materials 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000011982 device technology Methods 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 92
- 229910052804 chromium Inorganic materials 0.000 description 25
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 24
- 239000000126 substance Substances 0.000 description 12
- 238000000137 annealing Methods 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 7
- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 4
- 229910003443 lutetium oxide Inorganic materials 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 4
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 2
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007101138428A CN100494517C (zh) | 2007-09-26 | 2007-09-26 | Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2007101138428A CN100494517C (zh) | 2007-09-26 | 2007-09-26 | Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101135060A CN101135060A (zh) | 2008-03-05 |
CN100494517C true CN100494517C (zh) | 2009-06-03 |
Family
ID=39159383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101138428A Active CN100494517C (zh) | 2007-09-26 | 2007-09-26 | Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100494517C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101603206B (zh) * | 2009-07-07 | 2012-05-23 | 福州高意通讯有限公司 | Cr3+、Nd3+:YVO4晶体和Cr4+、Nd3+:YVO4晶体的制备方法 |
CN104051959A (zh) * | 2014-07-04 | 2014-09-17 | 青岛镭视光电科技有限公司 | 一种自调q激光器 |
CN108923236B (zh) * | 2018-08-01 | 2020-02-14 | 山东大学 | 一种基于钕离子掺杂的钒酸盐晶体激光器 |
CN109950784B (zh) * | 2019-04-10 | 2021-05-28 | 上海禾赛科技股份有限公司 | 激光器和激光雷达 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1779000A (zh) * | 2004-11-25 | 2006-05-31 | 中国科学院福建物质结构研究所 | 新型闪烁晶体掺铈钒酸盐晶体材料 |
-
2007
- 2007-09-26 CN CNB2007101138428A patent/CN100494517C/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1779000A (zh) * | 2004-11-25 | 2006-05-31 | 中国科学院福建物质结构研究所 | 新型闪烁晶体掺铈钒酸盐晶体材料 |
Non-Patent Citations (3)
Title |
---|
GdVO4晶体的生长及其性能研究. 梁红艳,于浩海,张怀金等.人工晶体学报,第36卷第1期. 2007 * |
光学显微术研究激光晶体Nd:GdVO4. 孙建亮,张吉果,陶绪堂.功能材料,第35卷第增刊期. 2004 * |
钛宝石激光泵浦Nd:GdVO4微片激光器. 王营,王正平,张怀金等.光电子.激光,第17卷第5期. 2006 * |
Also Published As
Publication number | Publication date |
---|---|
CN101135060A (zh) | 2008-03-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Lu et al. | 110 W Ceramic Nd 3+: Y 3 Al 5 O 12 Laser | |
CN100494517C (zh) | Re3+,Cr5+:LnVO4自调制激光晶体及制备方法与应用 | |
Griebner et al. | Laser operation of epitaxially grown Yb: KLu (WO/sub 4/)/sub 2/--KLu (WO/sub 4/)/sub 2/composites with monoclinic Crystalline structure | |
US20140098411A1 (en) | RARE EARTH DOPED Lu2O3 POLYCRYSTALLINE CERAMIC LASER GAIN MEDIUM | |
CN114108072B (zh) | 稀土离子掺杂的GdScO3激光晶体制备及其应用 | |
CN104018225B (zh) | 掺钕A3BGa3Si2O14系列晶体及其制备方法与应用 | |
CN104711677B (zh) | 一种自调q的石榴石晶体及其制作的自调q器件、自调q脉冲激光器 | |
CN102162133A (zh) | 一种锆铒镱三掺铌酸锂晶体及其制备方法 | |
CN111101198B (zh) | 掺钕硼酸锌铋自倍频晶体材料、切型及其制备方法与应用 | |
CN101174756A (zh) | 掺镱铌酸钙激光晶体及其制备方法 | |
WO2019042191A1 (zh) | 一类铒离子掺杂的硅酸盐晶体及其1.5微米波段激光器件 | |
CN105887200A (zh) | 一种铥钬共掺镓酸锶镧激光晶体、制造方法及其应用 | |
CN100549246C (zh) | Cr5+:RVO4晶体、制备方法和激光被动调Q器件 | |
CN101717998A (zh) | 掺钕的硅酸钇镥激光晶体及其制备方法 | |
CN105821478A (zh) | 一种铥钬共掺镓酸钡镧激光晶体、制造方法及其应用 | |
CN113067245B (zh) | 铽激活硼酸盐晶体及544nm或586nm波段激光器 | |
Liu et al. | Efficient laser oscillation of a new disordered Yb: CLNGG crystal | |
CN101709507A (zh) | 掺钕的硅酸钇钆激光晶体及其制备方法 | |
EP4083276A1 (en) | Absorbing material based on samarium-doped garnet for suppression of amplified spontaneous emission of the active medium of solid-state laser, use of this material, method of its production and monolithic element containing this absorbing material | |
CN114635179B (zh) | 一种宽谱带中红外Er,Dy:YAP激光晶体及其制备方法和应用 | |
CN101387010A (zh) | 掺钕硅酸钪激光晶体及其制备方法 | |
CN117051468A (zh) | 一种赝硅灰石结构SrGeO3晶体及其制备方法和应用 | |
CN101386416A (zh) | 掺Bi碱土硼酸盐晶体及其制备方法和应用 | |
JP2570497B2 (ja) | 非線形光学レーザ素子 | |
CN115161770A (zh) | 一种稀土离子掺杂四硼酸镓盐晶体、键合晶体、及晶体的制备方法和用途 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: QINGDAO LEICHUANG OPTOELECTRONIC TECHNOLOGY CO., L Free format text: FORMER OWNER: SHANDONG UNIVERSITY Effective date: 20100613 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 250012 NO.44, WENHUA WEST ROAD, LIXIA DISTRICT, JINAN CITY, SHANDONG PROVINCE TO: 266107 NO.13, XIANSHAN EAST ROAD, CHENGYANG DISTRICT, QINGDAO CITY, SHANDONG PROVINCE |
|
TR01 | Transfer of patent right |
Effective date of registration: 20100613 Address after: Chengyang District of Shandong city in Qingdao Province mountain road 266107 No. 13 Patentee after: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Address before: 250012 No. 44 West Wenhua Road, Lixia District, Shandong, Ji'nan Patentee before: Shandong University |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Re3+, Cr5+: LnVO4 self modulating laser crystal, preparation method and application thereof Effective date of registration: 20160918 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2016990000789 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170821 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2016990000789 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Re3+,Cr5+:LnVO4Self - modulated laser crystal and its preparation method and application Effective date of registration: 20170928 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2017370010063 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20180816 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2017370010063 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Re3+,Cr5+:LnVO4Self-modulating laser crystal and preparation method and application thereof Effective date of registration: 20190201 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: Qingdao Leichuang Photoelectric Technology Co.,Ltd. Registration number: 2019370010014 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20200915 Granted publication date: 20090603 Pledgee: Qingdao high technology financing Company limited by guarantee Pledgor: QINGDAO LASENCE PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Registration number: 2019370010014 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |