CN100491584C - Method for preparing different refractivity film layer - Google Patents
Method for preparing different refractivity film layer Download PDFInfo
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- CN100491584C CN100491584C CNB200510086464XA CN200510086464A CN100491584C CN 100491584 C CN100491584 C CN 100491584C CN B200510086464X A CNB200510086464X A CN B200510086464XA CN 200510086464 A CN200510086464 A CN 200510086464A CN 100491584 C CN100491584 C CN 100491584C
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Abstract
The invention relates to a manufacture method that could realize different refractive index film. It includes the following steps: two gun electron beams irradiating to high refractive index film and low refractive index synchronously in vacuum, the refractive index is continuously variable between the two films, and the value could be accurately adjusted by controlling the deposition rate of the two films. The method is easy to operate.
Description
Technical field
The invention belongs to optical film technology field, be meant a kind of preparation method who realizes different refractivity film layer especially.
Background technology
Realize the film structure of various requirement for the deposited by electron beam evaporation technology, usually require to have the coating materials of various specific refractory poweres, but, occurring in nature, the optics coating materials that can be used for the blooming preparation is very limited, and, some coating materials belongs to the mantle material, poor performance such as some coating materials protection against the tide, can selectively be used for high-quality coating materials then still less like this, the present invention is by using the height of various better performances, low two kinds of specific refractory power coating materials, the mode of steaming altogether with the bielectron rifle, realize the coating materials of different refractivity, by control of process condition, realize the size of different refractivity, and technology is simple, membranous layer stability is good, good reliability, specific refractory power is controlled, can regulate as required etc.
Summary of the invention
The method of realization different refractivity coating materials of the present invention is mainly used in the technology of preparing of various optical thin films, particularly some coating materials specific refractory poweres are required than higher field, in the special field of optical films of optical communication, semiconducter device and other needs, important use is arranged all, can realize the optical film structure that is not easy to realize with the conventional electrical beam evaporation.
The objective of the invention is to, a kind of technology of preparing of different refractivity film layer is provided, particularly the refractive index of those special optical films needs requires harsh rete technology of preparing, this technology of preparing is that two kinds of specific refractory power coating materials of the simultaneously common evaporation height of deposited by electron beam evaporation technology are realized technical use bielectron rifle device structure.
Technical scheme
A kind of preparation method who realizes different refractivity film layer, this method is used the rush-harvesting and rush-planting electron beam to evaporate high low-refraction coating materials simultaneously and is realized, the vaporator rate ratio of strict control evaporation height coating materials changes the refractive index value that the evaporation speed ratio can be regulated rete in the evaporate process, comprises the steps:
Step 1: high and low two kinds of specific refractory power coating materials silicon and silicon-dioxide are contained in respectively in two crucibles, then the rush-harvesting and rush-planting electron beam coater are extracted into high vacuum, promptly the vacuum tightness value is smaller or equal to 1 * 10
-4Pascal;
Step 2: substrate is heated to 200 to 300 ℃, and temperature control;
Step 3: set the vaporator rate of two kinds of coating materials silicon and silicon-dioxide in computer-controlled program, unlocking electronic rifle master switch starts the deposit program then;
Step 4: under computer control, adopt two quartz crystal vibrators to control the vaporator rate of two kinds of coating materials silicon and silicon-dioxide respectively, the vaporator rate ratio of silicon and silicon-dioxide is 1.05, realizes the refractivity film layer that needs.
The preparation method of described realization different refractivity film layer wherein uses two electron beam gun different specific refractory power coating materials of evaporation simultaneously.
The making method of described realization different refractivity film layer is wherein controlled the vaporator rate of two kinds of coating materials respectively with the quartz crystal controller.
The preparation method of described realization different refractivity film layer, the method that changes the evaporation thin-film refractive index adjust by the deposition rate of evaporation coating materials ratio.
The making method of described realization different refractivity film layer in the process of deposition membrane, requires the thermostatic control substrate temperature, and this temperature is 200 to 300 ℃.
The making method of described realization different refractivity film layer, used substrate is an optical glass surface, or semiconductor photoelectronic device chamber face.
Realize the method for different refractivity film layer, the specific refractory power of rete is the arbitrary refractive index between two kinds of specific refractory poweres of height.
Characteristics of the present invention are:
(1) characteristics of the different refractivity film layer technology of preparing of the present invention's proposition are: the evaporation technique that uses is the rush-harvesting and rush-planting electron beam evaporation technique, by the different refractivity film layer of evaporation technology parameter realization of two kinds of coating materials of control evaporation;
When (2) using the rush-harvesting and rush-planting electron beam evaporation, the mode of taking is the mode of steaming altogether simultaneously, starts electron beam gun simultaneously by computer-controlled program;
(3) two kinds of coating materials mentioning of the present invention are respectively the coating materials with high and low refractive index value, and their vaporization temperature can be close, also bigger difference can be arranged;
(4) the thin-film refractive index size of the realization mentioned of the present invention can be the arbitrary refractive index value between the high and low refractive index coating materials;
(5) the special refractivity film layer mentioned of the present invention is a kind of mixing material rete, and the specific refractory power size can be by control two kinds of coating materials velocity rates sizes control of evaporation simultaneously.
Description of drawings
Fig. 1 is the schema of the method for realization different refractivity film layer of the present invention.
Embodiment
The flow process of the method for the realization different refractivity film layer of Fig. 1, specific as follows:
Under high vacuum, the deposited by electron beam evaporation technology prepares the film rete that specific refractory power is 2.74 (wavelength is 1550nm), and two kinds of coating materials of evaporation silicon and silicon-dioxide are realized simultaneously.Control the evaporate process of two kinds of specific refractory power coating materials of common steaming simultaneously by computer, control the vaporator rate of two kinds of coating materials respectively with two quartz crystal vibrators, thereby realize the accurate control of refractive index, when preparing the film rete of this example, the vaporator rate ratio of silicon and silicon-dioxide is 1.05.Certainly, the equipment difference that evaporation is used, the precision difference of substrate temperature difference, quartz crystal vibrator control, evaporation speed used during evaporation need be carried out suitable fine setting, finally reaches needed refractive index value.
Claims (7)
1, a kind of preparation method who realizes different refractivity film layer is characterized in that, this method uses the rush-harvesting and rush-planting electron beam to evaporate high low-refraction coating materials silicon simultaneously and silicon-dioxide is realized, comprises the steps:
Step 1: high and low two kinds of specific refractory power coating materials silicon and silicon-dioxide are contained in respectively in two crucibles, then the rush-harvesting and rush-planting electron beam coater are extracted into high vacuum, the vacuum tightness value is smaller or equal to 1 * 10
-4Pascal;
Step 2: substrate is heated to 200 to 300 ℃, and temperature control;
Step 3: set the vaporator rate of silicon and two kinds of coating materials of silicon-dioxide in computer-controlled program, unlocking electronic rifle master switch starts the deposit program then;
Step 4: under computer control, adopt two quartz crystal vibrators to control the vaporator rate of silicon and two kinds of coating materials of silicon-dioxide respectively, the vaporator rate ratio of silicon and silicon-dioxide is 1.05, realizes the refractivity film layer that needs.
2, the making method of realization different refractivity film layer according to claim 1 is characterized in that, wherein uses two electron beam gun different specific refractory power coating materials of evaporation simultaneously.
3, the making method of realization different refractivity film layer according to claim 1 is characterized in that, wherein controls the vaporator rate of two kinds of coating materials respectively with the quartz crystal controller.
4, the making method of realization different refractivity film layer according to claim 1 is characterized in that, the method that changes the evaporation thin-film refractive index is to adjust by the deposition rate of evaporation coating materials ratio.
5, the making method of realization different refractivity film layer according to claim 1 is characterized in that, in the process of deposition membrane, requires the thermostatic control substrate temperature, and this temperature is 200 to 300 ℃.
6, the making method of realization different refractivity film layer according to claim 1 is characterized in that, used substrate is an optical glass surface, or semiconductor photoelectronic device chamber face.
7, the making method of realization different refractivity film layer according to claim 1 is characterized in that, the specific refractory power of rete is the arbitrary refractive index between two kinds of specific refractory poweres of height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510086464XA CN100491584C (en) | 2005-09-22 | 2005-09-22 | Method for preparing different refractivity film layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510086464XA CN100491584C (en) | 2005-09-22 | 2005-09-22 | Method for preparing different refractivity film layer |
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| CN1936069A CN1936069A (en) | 2007-03-28 |
| CN100491584C true CN100491584C (en) | 2009-05-27 |
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| CNB200510086464XA Expired - Fee Related CN100491584C (en) | 2005-09-22 | 2005-09-22 | Method for preparing different refractivity film layer |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101551527B (en) * | 2009-05-07 | 2011-09-14 | 厦门美澜光电科技有限公司 | Preparing method of optical substrate hidden pattern |
| CN101550533B (en) * | 2009-05-07 | 2011-04-13 | 厦门美澜光电科技有限公司 | Antistatic optical substrate preparation method |
| CN103367580A (en) * | 2013-07-25 | 2013-10-23 | 马鞍山圆融光电科技有限公司 | LED (Light-Emitting Diode) chip with high luminous efficiency and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806493A2 (en) * | 1996-05-10 | 1997-11-12 | Satis Vacuum Industries Vertriebs - AG | Vapor deposition apparatus for coating optical substrates |
| EP0880153A1 (en) * | 1997-04-25 | 1998-11-25 | Toray Industries, Inc. | A metallized film, a production method thereof, and a capacitor using it |
| GB2342929A (en) * | 1998-10-20 | 2000-04-26 | Leybold Systems Gmbh | Vapourisation device |
| CN1268922A (en) * | 1997-06-06 | 2000-10-04 | 康宁股份有限公司 | Method for forming a silicon layer on a surface |
-
2005
- 2005-09-22 CN CNB200510086464XA patent/CN100491584C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0806493A2 (en) * | 1996-05-10 | 1997-11-12 | Satis Vacuum Industries Vertriebs - AG | Vapor deposition apparatus for coating optical substrates |
| EP0880153A1 (en) * | 1997-04-25 | 1998-11-25 | Toray Industries, Inc. | A metallized film, a production method thereof, and a capacitor using it |
| CN1268922A (en) * | 1997-06-06 | 2000-10-04 | 康宁股份有限公司 | Method for forming a silicon layer on a surface |
| GB2342929A (en) * | 1998-10-20 | 2000-04-26 | Leybold Systems Gmbh | Vapourisation device |
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Granted publication date: 20090527 Termination date: 20091022 |