CN100487975C - Dielectric substance filter - Google Patents
Dielectric substance filter Download PDFInfo
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- CN100487975C CN100487975C CNB021593973A CN02159397A CN100487975C CN 100487975 C CN100487975 C CN 100487975C CN B021593973 A CNB021593973 A CN B021593973A CN 02159397 A CN02159397 A CN 02159397A CN 100487975 C CN100487975 C CN 100487975C
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- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011812 mixed powder Substances 0.000 description 4
- 239000011265 semifinished product Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- XBYNNYGGLWJASC-UHFFFAOYSA-N barium titanium Chemical compound [Ti].[Ba] XBYNNYGGLWJASC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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Abstract
A filter comprises a plurality of internal layer ground electrodes 22A, 22B, 24A, and 24B formed to contain each open end of resonant electrodes 14A, 14B, 14C, 16A, 16B, and 16C so as to sandwich in the laminating direction of dielectric layers. The dielectric ratio of a third to a sixth dielectric layers, S3 to S6 contained among these internal layer earth electrodes 22A, 22B and 24A, and 24B, is set higher than these of other dielectric layers (a first and a second dielectric layers S1 and S2, a seventh to ninth dielectric layers S7 to S9).
Description
Technical field
The present invention relates to a kind of dielectric filter that is used for mobile phone for example or is used for the high-frequency circuit of wireless communication terminal.
Background technology
Recently, dielectric filter is used for for example mobile phone and wireless communication terminal.This filter only allows the interior signal of the required frequency band of system pass through, and makes the signal attenuation outside the required frequency band of system.
Stripline resonator is used in the aforesaid high-frequency dielectric fluid filter.Adjust frequency by the length that changes resonator.
Along with for example variation of mobile phone of recent wireless communication system, be starved of and make the dielectric filter miniaturization.When making the compact outline of communication system, also need to make the resonator miniaturization.Therefore, the width of resonance electrode changes from the intermediate portion, and/or use the internal layer grounding electrode, to be used for changing step by step the impedance of resonator.Like this, can reduce to an equivalence value that makes compact outline to resonance frequency.
In general, in resonator, also resonance can take place under the resonance frequency of integral multiple.Therefore, can not in being higher than the frequency band of resonance frequency, signal sufficiently be decayed sometimes.
For example, an end of transmission line in the resonator of 1/4 wavelength of other end open circuit, is observed resonance at the frequency place of resonance frequency odd-multiple by short circuit therein.
Dielectric filter comprises resonator, and this resonator so that the signal in the required frequency band is passed through, and makes the interior signal attenuation of frequency band outside the required frequency band at the required frequency place resonance that signal is passed through.But, as mentioned above, resonance is also equaling 3 times or 5 times frequency place generation of required frequency.Therefore, the attenuation characteristic in above-mentioned frequency band becomes bad.
By as seen above-mentioned, well-known, relative by for example making the internal layer grounding electrode with the open end part of resonance electrode, insert dielectric layer therebetween at this resonance electrode, make the mid portion step-down of characteristic impedance from resonance electrode.Therefore, the resonance that occurs in the odd multiple number of frequency place of resonance frequency can be moved to higher frequency band, thereby can improve parasitic character.
Supposition now forms dielectric substrate by stacked a plurality of dielectric layers, and resonator is configured to along the stacked direction of the dielectric layer in the dielectric substrate.Form the internal layer grounding electrode, to be used for partly changing the impedance of resonance electrode from the centre.
At first, (1) increases the impedance ratio of each resonance electrode.Specifically, impedance is lowered at open end, and/or impedance is raised at short-circuit end.Secondly, (2) equate the electrical length of the short-circuit end with high impedance and the electrical length with low-impedance open end.
Can make the frequency shifts that equals 3 times of resonance frequencys arrive higher frequency band by method (1) and (2).
Impedance for the open end that reduces resonance electrode can utilize two methods, and promptly (1) increases the electrode width of open end, and (2) reduce the thickness between resonance electrode and internal layer grounding electrode.Yet in each case, the scope of change all is restricted.
In order to increase the impedance of short-circuit end, reduce the width of the short-circuit end of resonance electrode.Yet this makes characteristic become bad (reduction of Q value).Therefore, this method can not adopt.
Has the method that another kind is used to improve parasitic character.The electrical length of the short-circuit end with high impedance is equated with the electrical length with low-impedance open end.But, need this internal layer grounding electrode of lengthening.Yet in this case, the resonance frequency of (1) internal layer grounding electrode itself is lowered.Therefore, the peak value that is produced by the resonance of internal layer grounding electrode is moved on such frequency band, and the frequency in this frequency band equals the twice of frequency of filter passbands or three times.As a result, the decay quantitative change is bad in parasitic frequency band.In addition, (2) Q value is lowered, thereby the insertion of filter loss becomes bad.In addition, the input and output electrode is set (3) and the area minimizing of electrode is adjusted in coupling, thereby can not obtain required filter characteristic.
Summary of the invention
The present invention considers the problems referred to above and makes, thereby the objective of the invention is to, and a kind of dielectric filter is provided, and it can shorten the electrical length of short-circuit end and not change the length of resonance electrode, thereby it can improve the attenuation characteristic in the parasitic frequency band.
According to the present invention, a kind of dielectric filter is provided, it comprises: by the dielectric substrate of stacked a plurality of dielectric layers formation; Resonance electrode in described dielectric substrate, each described resonance electrode has the effective dielectric constant that changes according to its part; A plurality of internal layer grounding electrodes; Wherein, the open end of each described resonance electrode is inserted between the described dielectric layer along the stacked direction of described dielectric layer, is inserted in the dielectric constant of the dielectric constant of at least one the described dielectric layer in the described dielectric layer between described a plurality of internal layer grounding electrode greater than other any described dielectric layer.
In the present invention, when dielectric substrate comprised the dielectric layer with high-k, at least one dielectric layer that is inserted in the described dielectric layer between a plurality of internal layer grounding electrodes comprised the dielectric layer with low-k.Therefore, only be lowered at the effective dielectric constant of short-circuit end.As a result, though be constant, be increased in the impedance of short-circuit end, and electrical length is shortened at the impedance and the electrical length of open end.Thereby the parasitic character of dielectric layer is improved.
In resonance electrode, at the dielectric constant of short-circuit end with high impedance less than dielectric constant with low-impedance open end.Therefore, the electrical length of short-circuit end can only be shortened, and the length of resonance electrode can not be changed.Thereby the resonance of the higher-order of resonance electrode is moved to higher frequency band, thereby can improve parasitic character.
Can also be included in internal layer grounding electrode in the dielectric substrate according to dielectric filter of the present invention, it is used for providing electric capacity between the open end of resonance electrode and internal layer grounding electrode.In this structure, the open end of resonance electrode can insert between the internal layer grounding electrode along the stacked direction of dielectric layer, wherein is inserted at least one or several dielectric layer between a plurality of internal layer grounding electrodes and can has dielectric constant greater than any other dielectric layer.
When the explanation below also reading in conjunction with the accompanying drawing of expression the preferred embodiments of the present invention, can clearly be seen that above-mentioned purpose of the present invention, feature and advantage.
Description of drawings
Fig. 1 is the perspective view that is used to illustrate the dielectric filter of embodiments of the invention;
Fig. 2 is the longitudinal section that is used to illustrate the dielectric filter of embodiments of the invention; And
Fig. 3 is the decomposition diagram that is used to illustrate according to dielectric filter of the present invention.
Embodiment
To the embodiment of Fig. 3 explanation, the dielectric filter of stacked type has been shown in these accompanying drawings below with reference to Fig. 1 according to dielectric filter of the present invention.
As shown in Figure 1, have dielectric substrate 12 according to the dielectric filter 10 of embodiments of the invention, it comprises by stacked, sintering and be integrated a plurality of dielectric layers (S1 sees Fig. 3 to S9) of a unit, also comprises being formed on lip-deep grounding electrode 20.Two pairs of resonators 14,16 are formed in the dielectric substrate 12.
Each resonator 14 and 16 comprises 3 resonance electrode 14A that for example are stacked together along stacked direction, 14B, 14C and 16A, 16B, 16C.Dielectric layer is inserted into dielectric layer 14A along stacked direction respectively, 16A and 14B, and with dielectric layer 14B, 16B and 14C are between the 16C between the 16B.
As each resonance electrode 14A, 14B when 14C and 16A, 16B, 16C for example are 1/4 wave resonance electrode, adopts following structure as shown in Figure 2.Grounding electrode 20 is formed on the resonance electrode 14A in a plurality of sides of dielectric substrate 12,14B, and 14C and 16A, on the surface that 16B, 16C are exposed, and corresponding resonance electrode 14A, 14B, 14C and 16A, 16B, first end of 16C is by grounding electrode 20 short circuits.
In this structure, each resonance electrode 14A, 14B, 14C and 16A, 16B, the open end of 16C be by means of internal layer grounding electrode 22A, 22B, 24A, 24B and grounding electrode 20 capacitive coupling.Therefore, can shorten each resonance electrode 14A, 14B, 14C and 16A, 16B, the electrical length of 16C.Below to by internal layer grounding electrode 22A, 22B, 24A, this function that 24B realizes describes.
The structure of dielectric filter 10 describes with reference to Fig. 3.At first, dielectric substrate 12 comprise a plurality of dielectric layers (the first and second dielectric layer S1 for example, S2), wherein each dielectric layer has low dielectric constant (for example DIELECTRIC CONSTANT r=7); A plurality of dielectric layers (the 3rd to the 6th dielectric layer S3-S6), wherein each dielectric layer has high dielectric constant (for example DIELECTRIC CONSTANT r=80); And a plurality of dielectric layers (for example the 7th to the 9th dielectric layer S7-S9), wherein each dielectric layer has low dielectric constant (for example DIELECTRIC CONSTANT r=7), and these dielectric layers are stacked together mutually.Each dielectric layer in the 1st to the 9th dielectric layer is formed by one or more layers.
Two couples of resonance electrode 14A, 14B, 14C and 16A, 16B, 16C are formed on the corresponding first type surface of the 4th to the 6th dielectric layer S4-S6.Particularly, be formed on the corresponding resonance electrode 14A on the first type surface of the 4th dielectric layer S4,16A has the electrode 30,32 of introducing, so that connect input 26 and output 28 (see figure 1)s.
Internal layer grounding electrode 22A, 24A is formed on the first type surface of the 3rd dielectric layer S3, and is positioned at resonance electrode 14A shown in Figure 3, the top of the corresponding open end of 16A.At resonance electrode 14A, the corresponding open end of 16A and internal layer grounding electrode 22A provide electric capacity between the 24A.In addition, form coupling and adjust electrode 34, so that adjust the degree of coupling between the resonator 14,16.
Internal layer grounding electrode 22B, 24B is formed on the first type surface of the 7th dielectric layer S7, and is positioned at resonance electrode 14C shown in Figure 3, the below of the corresponding open end of 16C.At resonance electrode 14C, the corresponding open end of 16C and internal layer grounding electrode 22B provide electric capacity between the 24B.
As mentioned above, have a plurality of internal layer grounding electrode 22A according to the dielectric filter 10 of embodiments of the invention, 22B, 24A, 24B, they along the stacked direction of dielectric layer with resonance electrode 14A, 14B, 14C and 16A, 16B, the corresponding open end of 16C is clipped in the middle.Be inserted in internal layer grounding electrode 22A, 22B, the dielectric constant of 24A, the 3rd between the 24B each dielectric layer in the 6th dielectric layer S3-S6 is greater than the dielectric constant of other each dielectric layer (the 1st and the 2nd dielectric layer S1, S2, and the 7th to the 9th dielectric layer S7-S9).
Supposition dielectric substrate 12 has a plurality of dielectric layers now, and wherein each dielectric layer has high-k.Under this hypothesis, do as a whole, corresponding resonance electrode 14A, 14B, 14C, 16A, 16B, 16C is covered by the dielectric layer (the 4th to the 6th dielectric layer S4-S6) that each all has high-k.From this state, finely tune or similar operations, so that adjust to a predetermined passband.
Therefore, if at each resonance electrode 14A, 14B, 14C, and 16A, 16B, the short-circuit end of 16C changes impedance and electrical length, then needs to reduce in the impedance of open end and the change of electrical length.
But, in this embodiment, be clipped in internal layer grounding electrode 22A, 22B, 24A, the 3rd between the 24B has dielectric constant greater than other each dielectric layer (the first and second dielectric layer S1 and S2 and the 7th to the 9th dielectric layer S7-S9) to each dielectric layer among the 6th dielectric layer S3-S6.Therefore, have only effective dielectric constant to be lowered at short-circuit end.As a result, can only shorten at each resonance electrode 14A, 14B, 14C and 16A, 16B, the electrical length of the short-circuit end of 16C, and do not change each resonance electrode 14A, 14B, 14C, and 16A, 16B, the resonance electrode length of 16C.Thereby, resonance electrode 14A, 14B, 14C, and 16A, 16B, the resonance of the higher-order of each of 16C is moved to higher frequency band, thereby can improve parasitic character.
The following describes the method that is used to make according to the dielectric filter 10 of embodiments of the invention.
In dielectric filter 10, in dielectric substrate 12, between layer, form various types of electrodes (perhaps including electrode) in inside according to present embodiment.Therefore, preferably use the electrode that has little loss and have low resistance coefficient.
Preferably use the ceramic dielectric body as dielectric, because its reliability height, and dielectric constant can be selected in a wide scope.When using this dielectric, can make dielectric filter 10 miniaturizations effectively.
As a kind of manufacture method, form electrode pattern by coated with conductive cream on the briquetting of ceramic powders.After this, each briquetting is integrated into a unit by stacked, sintering, densification and with the ceramic dielectric body that wherein is stacked with conductor.
When using based on silver or during based on the conductor of copper, being difficult to make conductor and common dielectric material co-sintered to be in the same place, this is because this conductor has low fusing point.Therefore, need to use and to be lower than the dielectric material that carries out sintering under the fusing point of conductor (being not more than 1100 ℃).
From it seems as the performance of the device of microwave filter, preferably use such dielectric material, that is, use this material that the temperature characterisitic (temperature coefficient) of the resonance frequency of the resonant circuit that must form is not more than ± 50ppm/ ℃.
Above-mentioned dielectric material can comprise the material based on glass, for example based on glass powder, the TiO of cordierite
2Powder and Nd
2Ti
2O
7The mixture of powder; Add to based on BaO-TiO by glass formation composition and/or glass powder trace
2-Re
2O
3-Bi
2O
3Composition in (Re: the material that obtains rare earth element); And add the material that obtains in the magnetic dielectric powder based on the combination of oxidation barium-titanium oxide-neodymia to by glass powder with trace.
For example, by abundant mixing 73% glass powder by weight percentage, the Ti available on the market of 17% percentage by weight
2O
2The Nd of powder and 10% percentage by weight
2Ti
2O
7The mixed-powder that powder obtains is used as the mixed-powder of the 3rd to the 6th dielectric layer S3-S6 (the ε r=80 of dielectric constant) of the dielectric filter 10 of embodiments of the invention, and wherein the glass powder composition is (18% percentage by weight) MgO-(37% percentage by weight) Al
2O
3-(37% weight) SiO
2-(5% percentage by weight) B
2O
3-(3% percentage by weight) TiO
2
Use therein Nd
2Ti
2O
7Powder passes through Nd
2O
3Powder and TiO
2Powder obtains 1200 ℃ of calcinings after pulverizing.
By abundant mixing 100% percentage by weight by (17mol%'s) ZnO-(24mol%'s) BaO-(49%mol's) TiO
2-(5mol%'s) Mn and (5mol%'s) Al
2O
3The mixed-powder that the composition that constitutes and the glass powder of 5% percentage by weight obtain is as the first and second dielectric layer S1, S2 and 7-the 9th dielectric layer S7-S9 (DIELECTRIC CONSTANT r=7).
Then, the solvent of acrylic acid organic bond, plasticizer, toluene and ethanol based is added in each mixed-powder, fully mixes with alumina balls then, thereby makes slurry.Use this slurry to be prepared into the semi-finished product band of thickness by doctor blade method as 0.05mm-0.5mm.
Then, use silver paste to print conductor fig shown in Figure 3 respectively as conductive paste.Then, as shown in Figure 3, the semi-finished product band is by stacked, and these semi-finished product are that to adjust the thickness of the semi-finished product band that is printed with conductor fig on it required.After this, they for example are being sintered under 900 ℃ the temperature, thereby make dielectric substrate 12.
When adopting above-mentioned production method, can easily produce and have a plurality of internal layer grounding electrode 22A, 22B, 24A, the dielectric filter 10 of 24B.Resonance electrode 14A, 14B, 14C, 16A, 16B, the open end of 16C is inserted into internal layer grounding electrode 22A, 22B along the stacked direction of dielectric layer, 24A, between the 24B, wherein insert a plurality of internal layer grounding electrode 22A, 22B, 24A, the dielectric constant of the dielectric layer of 24B is higher than the dielectric constant of any other dielectric layer.
Certainly be not limited to the above embodiments according to dielectric filter of the present invention, do not break away under the situation of design of the present invention or basic substantive characteristics, the present invention can implement with different forms.
Claims (1)
1. dielectric filter, it comprises:
Dielectric substrate (12) by stacked a plurality of dielectric layers formation;
Resonance electrode in described dielectric substrate (12) (14A, 14B, 14C, 16A, 16B, 16C);
A plurality of internal layer grounding electrodes (22A, 22B, 24A, 24B);
Wherein, described resonance electrode (14A, 14B, 14C, 16A, 16B, each open end 16C) is inserted between the described internal layer grounding electrode along the stacked direction of described dielectric layer, is inserted in described a plurality of internal layer grounding electrode (22A, 22B, 24A, 24B) dielectric constant of at least one the described dielectric layer in the described dielectric layer between is greater than the dielectric constant of other any described dielectric layer, and described resonance electrode (14A, 14B, 14C, 16A, 16B, the impedance of each open end part 16C) is less than described resonance electrode (14A, 14B, 14C, 16A, 16B, the impedance of each short-circuit end part 16C), and described internal layer grounding electrode (22A, 22B, 24A 24B) is used at described resonance electrode (14A, 14B, 14C, 16A, 16B, open end 16C) and described internal layer grounding electrode (22A, 22B, 24A provides electric capacity between 24B).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP396166/01 | 2001-12-27 | ||
| JP2001396166A JP2003198206A (en) | 2001-12-27 | 2001-12-27 | Laminated dielectric filter |
| JP396166/2001 | 2001-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1430308A CN1430308A (en) | 2003-07-16 |
| CN100487975C true CN100487975C (en) | 2009-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB021593973A Expired - Fee Related CN100487975C (en) | 2001-12-27 | 2002-12-27 | Dielectric substance filter |
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| Country | Link |
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| JP (1) | JP2003198206A (en) |
| CN (1) | CN100487975C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5005915B2 (en) * | 2005-12-07 | 2012-08-22 | 宇部興産株式会社 | Multilayer dielectric resonator and multilayer dielectric filter |
| DE102008020597B4 (en) * | 2008-04-24 | 2017-11-23 | Epcos Ag | circuitry |
| JP6317890B2 (en) | 2013-05-17 | 2018-04-25 | 太陽誘電株式会社 | High frequency filter and high frequency module including the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1274476A (en) * | 1998-05-29 | 2000-11-22 | 皇家菲利浦电子有限公司 | Dielectric filter |
-
2001
- 2001-12-27 JP JP2001396166A patent/JP2003198206A/en active Pending
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2002
- 2002-12-27 CN CNB021593973A patent/CN100487975C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1274476A (en) * | 1998-05-29 | 2000-11-22 | 皇家菲利浦电子有限公司 | Dielectric filter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1430308A (en) | 2003-07-16 |
| JP2003198206A (en) | 2003-07-11 |
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