CN100487463C - Microelectronic mechanical system probe card equipment and method based on elastic substrate - Google Patents
Microelectronic mechanical system probe card equipment and method based on elastic substrate Download PDFInfo
- Publication number
- CN100487463C CN100487463C CN 200710042311 CN200710042311A CN100487463C CN 100487463 C CN100487463 C CN 100487463C CN 200710042311 CN200710042311 CN 200710042311 CN 200710042311 A CN200710042311 A CN 200710042311A CN 100487463 C CN100487463 C CN 100487463C
- Authority
- CN
- China
- Prior art keywords
- probe
- circuit lead
- polyimide
- electroforming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
The invention relates to a probe-card preparation method for MEMS based on elastic basement. By adopting secondary lithography and electroforming technology poly (dimethylsiloxane) and polyimide are coated on the surface of glass or silicon chip to constitute the elastic basement, which is used to take the place of cantilever beam and simple supported beam at present to bear and generate bigger impaling oxide film stress and adjust probe displacement by changing thickness of elastic basement. Circuit lead wire is set on the elastic basement. Probes are located at the top of circuit lead wire and are arranged in array according to pin positions of testing chip. Probe pinpoints are corresponded with corresponding pin positions of chip. The bottom end of probe is circuit lead wire obtained by electroforming. Circuit lead wires are connected with periphery of probe card from probe bottom ends. The periphery is connected on the corresponding printed circuit board by spot welding so that signal circuit from probe to testing machine station is connected. Probe card prepared by the invention is provided with simple process, high yield, very high overlay accuracy and bigger bearing stress.
Description
Technical field
The present invention relates to a kind of microelectronic mechanical system probe card based on elastic substrates, the exploration card that makes is used for IC chip test, belongs to the ic test technique field.
Background technology
Test semiconductor wafer be by under uncut state to the integrated circuit on wafer and the wafer comprise short circuit, electric performance test such as open circuit, check the integrated circuit ideal operation state on wafer and the wafer, thereby found out the method that improves yield rate, reduces the chip manufacturing cost and promote chip functions.Along with very large scale integration technology develops to bigger integrated level and more speed, make the quantity of I/O (Input/Output) sharply increase, the size of chip pin and spacing are corresponding dwindles.So not only manufacturing technology is extremely important, and it is crucial more that the detection means of product also becomes, and the epoxy resin pin type exploration card that traditional-handwork is made more and more is difficult to satisfy request for utilization.Along with the development of microelectromechanical systems (MEMS:Microelectro mechanical systems) technology, brought new method for the preparation of exploration card, and obtained remarkable progress.Reported the MEMS exploration card that multiple employing distinct methods is realized at present, as people such as MasoudZargari at " A BiCOMS Active Substrate Probe-Card Technology for DigitalTesting " (IEEE Journal of Solid-State Circuits, Vol.34, No.8, ugust 1999) report is made in the article film exploration card, be to process contact salient point at Kapton also to connect with little transmission line of photoetching, distance narrows down to 100 μ m between two probes, improved flatness, reduced infringement to weld pad, simultaneously can shorten signal path length, reduce the interference that transmission signals is subjected to.But because all probes on the film exploration card must touch chip simultaneously under a simple stress, so become serious problems along with the increase of chip complexity and contact point quantity.(The 12 at " Si-based microprobe card with shape knife-edged tips combined metal deposition " for people such as Younghak Cho
ThInternational conference on solid sensors and microsystems, Boston, June 8-12,2003) reported the cantilever beam type probe structure of making by silicon micromachining technology in the article, but the subject matter of this class MEMS exploration card is the size of probe can not be born and produce and destroy natural oxidizing layer or the needed stress of pollution layer on the metal pins surface when continuing to reduce.A kind of simple-beam type microelectronic mechanical system detection card of applications such as quiet Xiang Meng and preparation method thereof (number of patent application: 200610117283.3), adopt many photoetching of UV-LIGA, electroforming process on glass or silicon chip substrate, to prepare the elastic metallic probe, structurally adopt simple beam structure to replace traditional cantilever beam structure, can bear and produce bigger stress, method by the plated metal circuit lead is guided signal into periphery from probe, and be connected on the pcb board by spot welding, be convenient to the maintenance and the replacing of probe, but this technical matters step is more.
Utilize the MEMS processing technology, prepare that number of probes is many, spacing is little, can bear the elasticity exploration card of bigger stress, and can connect the development trend that existing peripherals becomes exploration card.
Summary of the invention
The objective of the invention is at the deficiencies in the prior art, a kind of microelectronic mechanical system probe card based on elastic substrates is provided, it is simple to have technology, the yield rate height, and the probe shape controllable size can be born bigger advantages such as stress.
For realizing this purpose, the present invention adopts secondary photoetching and electroforming process, apply dimethyl silicone polymer (PDMS) and polyimide (PI) formation elastic substrates successively at glass or silicon chip substrate surface, in order to replace present cantilever beam structure and simple beam structure, bear and produce the bigger oxide film stress that pierces through, and regulate the displacement of probe by the thickness that changes elastic substrates.Arrange circuit lead on the elastic substrates, probe is positioned at the top of circuit lead, and according to the position array arrangement of the chip pin that will test, probe tip is corresponding one by one with the relevant chip Pin locations.The bottom of probe is the circuit lead that electroforming obtains, and circuit lead is connected to the exploration card periphery from the probe bottom, and the periphery is connected to above the corresponding printed circuit board (PCB) by spot welding again, thereby is communicated with the signal circuit from the probe to the tester table.
Method of the present invention realizes as follows:
1, adopting glass or silicon chip is substrate, uses the washed with de-ionized water substrate, oven dry; Apply 100-500 μ m elastic substrates dimethyl silicone polymer (PDMS:Polydimethylsiloxane) at substrate surface then, again the cracking when the thick polyimide (PI:Polyimide) of coating 50-200 μ m on the PDMS is used to increase adhesion and prevents PDMS in sputter.
2, at the Cr/Cu metal counterdie of polyimide surface sputter 50-150nm, photoetching then, copper electroforming or gold prepare the highly circuit lead of 1-20 μ m, live width 5-100 μ m.
3, on the circuit lead top, photoetching, electroforming metal nickel, the probe of preparation height 20-100 μ m, diameter 5-50 μ m.
4, remove photoresist, remove the Cr/Cu metal counterdie on the polyimide.
5, adopt the method connecting circuit lead-in wire and the printed circuit board (PCB) of spot welding.
The MEMS exploration card advantage based on elastic substrates of utilizing the present invention to make is: (1) technology is simple, the yield rate height only adopts secondary photoetching electroforming process, and this method can well be controlled the probe shape size, have very high alignment precision, be very suitable for large-scale production; (2) with respect to present cantilever beam type MEMS exploration card, exploration card of the present invention can bear and produce bigger stress; (3) guide signal into periphery from probe by the method for electroforming metal circuit lead, and be connected on the printed circuit board (PCB), be convenient to the maintenance and the replacing of probe,, can save cost, enlarge the adaptability of exploration card preparation with respect to through hole lead-in wire method by spot welding; (4) glass substrate and metal probe structure are all high temperature resistant, are applicable to the chip aging test, and (5) are compared with simple-beam type microelectronic mechanical system detection card, and manufacture craft of the present invention is simpler, and cost is lower.
Description of drawings
Fig. 1 is the MEMS exploration card structural representation based on elastic substrates provided by the invention.
Among Fig. 1,1 is substrate, and 2 is dimethyl silicone polymer (PDMS), and 3 is polyimide (PI), and 5 is circuit lead, and 7 is probe.
Fig. 2 is the manufacture craft flow process of the MEMS exploration card based on elastic substrates of the present invention.
Among Fig. 2,1 is substrate, and 2 is dimethyl silicone polymer (PDMS), and 3 is polyimide (PI), and 4 is the metal counterdie, and 5 is circuit lead, and 6 is photoresist, and 7 is probe.
Step 1: apply PDMS and polyimide; Step 2: sputter, photoetching, electroforming circuit lead; Step 3: photoetching, electroforming metal probe; Step 4: remove photoresist and metal counterdie.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment technical scheme of the present invention is further described.Following examples do not constitute limitation of the invention.
Exploration card structural parameters: glass substrate, dimethyl silicone polymer thickness 100 μ m, polyimide thickness 100 μ m, copper circuit lead-in wire, probe diameter 20 μ m, probe height 20 μ m.
The preparation method is as shown in Figure 2:
(1) elastic substrates preparation
Employing thickness is that the glass sheet of 2mm is a substrate 1, at first carries out substrate and handles: clean with acetone, alcohol and deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of vacuum drying ovens.Spin coating thickness is the thick dimethyl silicone polymers 2 of 100 μ m on substrate then, and rotating speed is 1000rpm, is cured in following 2 hours at 80 ℃, and spin coating thickness is the polyimide 3 of 100 μ m then, and rotating speed is 1000rpm, is cured in following 2 hours at 250 ℃.
(2) the metallic circuit lead-in wire is made
At first at the Cr/Cu metal counterdie 4 of polyimide surface sputter 100nm, the positive glue AZ4620 that spin coating 7 μ m are thick, adopt the German Karl Suss MA6 of company photo-etching machine exposal, time shutter is 50 seconds, development time is 60 seconds, the metallic copper circuitry lead-in wire 5 of electroforming thickness 5 μ m, width 20 μ m, strength of current 200mA, 50 minutes electroforming time.
(3) metal probe is made
The thick positive glue AZ4903 (photoresist 6) of spin coating 22 μ m on the metallic circuit lead-in wire, the time shutter is 220 seconds, development time is 180 seconds, the metallic nickel probe 7 that electroforming 20 μ m are thick, strength of current is 12mA, the electroforming time is 60 minutes.
(4) removal of photoresist and metal counterdie
At 5.5mW/cm
2Exposure machine exposed 5 minutes down, developed 10 minutes in developer solution then, removed photoresist 6.The Cr/Cu metal counterdie 4 of polyimide surface adopts the method for argon plasma etching to remove etching power 20kW, gas flow 40sccm, etching time 15 minutes.
(5) adopt the method connecting circuit of spot welding to go between and printed circuit board (PCB), finish the exploration card preparation.
Exploration card structural parameters: glass substrate, PDMS thickness 200 μ m, polyimide thickness 50 μ m, copper circuit lead-in wire, probe diameter 50 μ m, probe height 40 μ m.
(1) elastic substrates preparation
Employing thickness is that the glass sheet of 2mm is a substrate, at first carries out substrate and handles: clean with acetone, alcohol and deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of vacuum drying ovens.Spin coating thickness is the thick dimethyl silicone polymers of 200 μ m on substrate then, and rotating speed is 600rpm, is cured in following 2 hours at 85 ℃, and spin coating thickness is the polyimide of 50 μ m then, and rotating speed is 2000rpm, is cured in following 2 hours at 250 ℃.
(2) the metallic circuit lead-in wire is made
At first at the Cr/Cu metal counterdie of polyimide surface sputter 100nm, the positive glue AZ4620 that spin coating 7 μ m are thick, adopt the German Karl Suss MA6 of company photo-etching machine exposal, time shutter is 50 seconds, development time is 60 seconds, electroforming thickness is that 5 μ m, width are the metallic copper circuitry lead-in wire of 20 μ m, strength of current 200mA, 50 minutes electroforming time.
(3) metal probe is made
The thick positive glue AZ4903 of spin coating 22 μ m on circuit lead, the time shutter is 220 seconds, development time is 180 seconds, the thick metallic nickel of electroforming 20 μ m, strength of current is 12mA, the electroforming time is 60 minutes; For increasing probe height, repeat this technology once, the thick positive glue AZ4903 of spin coating 22 μ m above probe, the time shutter is 220 seconds, development time is 180 seconds, the metallic nickel probe that electroforming 20 μ m are thick, strength of current is 12mA, the electroforming time is 60 minutes.
(4) removal of photoresist and metal counterdie
At 5.5mW/cm
2Exposure machine exposed 5 minutes down, developed 10 minutes in developer solution then, removed photoresist.The Cr/Cu metal counterdie of bottom adopts the method for argon plasma etching to remove etching power 20kW, gas flow 40sccm, etching time 15 minutes.
(5) adopt the method connecting circuit of spot welding to go between and printed circuit board (PCB), finish the exploration card preparation.
Exploration card structural parameters: silicon chip, PDMS thickness 500 μ m, polyimide thickness 50 μ m, golden circuit lead, probe diameter 5 μ m, probe height 20 μ m.
(1) elastic substrates preparation
Employing thickness is that the silicon chip of 1mm is a substrate, at first carries out substrate and handles: clean with acetone, alcohol and deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of vacuum drying ovens.Spin coating thickness is the thick dimethyl silicone polymers of 500 μ m on substrate then, and rotating speed is 200rpm, is cured in following 2 hours at 90 ℃, and spin coating thickness is the polyimide of 50 μ m then, and rotating speed is 2000rpm, is cured in following 2 hours at 250 ℃.
(2) the metallic circuit lead-in wire is made
At first at the Cr/Cu metal counterdie of polyimide surface sputter 100nm, the positive glue AZ4620 that spin coating 7 μ m are thick, adopt the German Karl Suss MA6 of company photo-etching machine exposal, time shutter is 50 seconds, development time is 60 seconds, electroforming thickness 5 μ m, width are the metallic gold circuit lead of 20 μ m, and strength of current is 200mA, and the electroforming time is 50 minutes.
(3) metal probe is made
The thick positive glue AZ4903 of spin coating 22 μ m above circuit lead, the time shutter is 220 seconds, development time is 180 seconds, the metallic nickel probe that electroforming 20 μ m are thick, strength of current is 12mA, the electroforming time is 60 minutes.
(4) removal of photoresist and metal counterdie
At 5.5mW/cm
2Exposure machine exposed 5 minutes down, developed 10 minutes in developer solution then, removed photoresist.The Cr/Cu metal counterdie of bottom adopts the method for argon plasma etching to remove etching power 20kW, gas flow 40sccm, etching time 15 minutes.
(5) adopt the method connecting circuit of spot welding to go between and printed circuit board (PCB), finish the exploration card preparation.
Claims (2)
1, a kind of microelectronic mechanical system detection card based on elastic substrates, comprise substrate (1), probe (7) and circuit lead (5), it is characterized in that described substrate (1) surface applies dimethyl silicone polymer (2) successively and polyimide (3) constitutes elastic substrates, arrange circuit lead (5) on the elastic substrates, probe (7) is positioned at the top of circuit lead (5), and according to the position array arrangement of the chip pin that will test, probe tip is corresponding one by one with the relevant chip Pin locations, the circuit lead (5) of probe (7) bottom is linked the periphery and is connected on the printed circuit board (PCB) by spot welding, is connected to tester table by printed circuit board (PCB) again.
2, the preparation method of the microelectronic mechanical system detection card based on elastic substrates as claimed in claim 1 is characterized in that comprising the steps:
1) adopting glass or silicon chip is substrate, with washed with de-ionized water and oven dry; Apply 100-500 μ m dimethyl silicone polymer at substrate surface then, on dimethyl silicone polymer, apply the thick polyimide of 50-100 μ m again;
2) at the Cr/Cu metal counterdie of polyimide surface sputter 50-150nm, photoetching then, copper electroforming or gold prepare the highly circuit lead of 2-20 μ m, live width 5-100 μ m;
3) on the circuit lead top, after resist coating, exposure, the development, electroforming metal nickel is made the highly metal probe of 20-100 μ m, diameter 5-50 μ m;
4) remove photoresist, remove the Cr/Cu metal counterdie on the polyimide;
5) adopt the method connecting circuit of spot welding to go between and printed circuit board (PCB).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710042311 CN100487463C (en) | 2007-06-21 | 2007-06-21 | Microelectronic mechanical system probe card equipment and method based on elastic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710042311 CN100487463C (en) | 2007-06-21 | 2007-06-21 | Microelectronic mechanical system probe card equipment and method based on elastic substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101078738A CN101078738A (en) | 2007-11-28 |
| CN100487463C true CN100487463C (en) | 2009-05-13 |
Family
ID=38906306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200710042311 Expired - Fee Related CN100487463C (en) | 2007-06-21 | 2007-06-21 | Microelectronic mechanical system probe card equipment and method based on elastic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100487463C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101700869B (en) * | 2009-11-12 | 2011-06-01 | 上海交通大学 | Method for preparing flexible substrate biological microelectrode array based on substrate graph |
| CN101949946B (en) * | 2010-09-03 | 2012-11-07 | 东华大学 | Method for producing photoelectrochemical microfluidic detection chip of three-electrode system |
| CN103412164B (en) * | 2013-07-16 | 2015-12-23 | 上海交通大学 | The MEMS (micro electro mechanical system) probe gone between based on elastic substrates and the back side and preparation method |
| CN103412163B (en) * | 2013-07-16 | 2016-08-17 | 上海交通大学 | Microelectromechanical systems probe card keyset based on elastic polymer material |
| CN206920558U (en) * | 2017-03-31 | 2018-01-23 | 张咪 | A kind of modular i C test benches and IC test devices |
| CN111983272B (en) * | 2020-08-14 | 2021-02-12 | 强一半导体（苏州）有限公司 | Method for manufacturing guide plate MEMS probe structure |
-
2007
- 2007-06-21 CN CN 200710042311 patent/CN100487463C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101078738A (en) | 2007-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100487463C (en) | Microelectronic mechanical system probe card equipment and method based on elastic substrate | |
| KR100502125B1 (en) | Method of producing a contact structure | |
| KR100508419B1 (en) | Contact structure formed by microfabrication process | |
| US6579804B1 (en) | Contact structure and production method thereof and probe contact assembly using same | |
| US6677245B2 (en) | Contact structure production method | |
| US20010004556A1 (en) | Contact structure and production method thereof and probe contact assembly using same | |
| US7452212B2 (en) | Metalized elastomeric electrical contacts | |
| CN103412164B (en) | The MEMS (micro electro mechanical system) probe gone between based on elastic substrates and the back side and preparation method | |
| KR20010076422A (en) | Contact structure and production method thereof | |
| US6641430B2 (en) | Contact structure and production method thereof and probe contact assembly using same | |
| US20010026166A1 (en) | Probe contactor and production method thereof | |
| CN100445750C (en) | Simple-beam type microelectronic mechanical system detection card and producing method thereof | |
| JP2001091539A (en) | Contact structure formed by microfabrication | |
| KR20000053655A (en) | Contact structure formed by photolithography process | |
| JP4560221B2 (en) | Contact structure and manufacturing method thereof | |
| JP2008089461A (en) | Prober for inspecting semiconductor integrated circuit | |
| KR20090026815A (en) | Contact structure and production method thereof and probe contact assembly using same | |
| CN112362925A (en) | Micro-electromechanical probe and manufacturing method | |
| US8832936B2 (en) | Method of forming metallized elastomeric electrical contacts | |
| US20090053908A1 (en) | Metalized Elastomeric Electrical Contacts | |
| KR100841134B1 (en) | Method for multi layer ceramic substrate in probe card | |
| KR100877076B1 (en) | Insulating method of tips for probe card by glass ink coating method | |
| KR101301740B1 (en) | Method for producing probe card and probe card thereby | |
| KR100842395B1 (en) | A manufacturing method of tip constituting probe card by using electroless plating | |
| KR101334458B1 (en) | A Probe Structure And Making Method For The Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090513 Termination date: 20120621 |