CN100485381C - Gas sensor with pressure difference compensation function - Google Patents
Gas sensor with pressure difference compensation function Download PDFInfo
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- CN100485381C CN100485381C CNB2006100220153A CN200610022015A CN100485381C CN 100485381 C CN100485381 C CN 100485381C CN B2006100220153 A CNB2006100220153 A CN B2006100220153A CN 200610022015 A CN200610022015 A CN 200610022015A CN 100485381 C CN100485381 C CN 100485381C
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Abstract
This invention is one kind of gas sensor with the differential pressure compensatory function. Its composition is: two quite same and neighboring cup shape feeling pressure structures on the silicon substrate, each cup shape feeling pressure structure includes a feeling pressure diaphragm and the base with strut function in its periphery. The feeling pressure diaphragm has four strain resistances which connect to each other constituting Wheatstone bridge. One of the feeling press diaphragm of the cup-shape feeling presses structure, which surface attaches to polymer thin film which is sensitive to measured gas, is the gas feeling measure area; the surface of the other feeling press diaphragm is exposed as the differential pressure compensates area. This sensor also may integrate the temperature compensation area to realize the pressure difference compensation and temperature compensation simultaneously.
Description
Affiliated field
The present invention relates to sensor technical field, particularly gas sensor.
Background technology
Gas sensor detects at air environmental pollution, and fields such as inflammable, explosive, poisonous harmful gas detection, robot, medical diagnosis on disease and military affairs all have broad application prospects.At present the gas sensor of using mainly is that electricity is led control type sensor (having the body electricity to lead two kinds of control type and surface conductance control types), as publication number is the gas sensor of CN1146554A, its structure mainly comprises layer of metal oxide gas sensory and a well heater, its principle be according to the oxidation-reduction quality of gas gas sensory surperficial betatopic character, realize the detection of gas content.All need to be heated to about 300 ℃ of ability during this class gas sensor work and guarantee carrying out smoothly of redox reaction, this has brought following drawback just for such sensor: at first, need heating and temperature controlling device, increased the volume and the complexity of sensor, the power consumption height; Secondly, inconvenience is made of existing microelectronic technique, and integrated level is not high, because higher heating-up temperature makes the difficulty increasing that signal processing circuit and set of sensors is formed in same substrate; The 3rd, the most of organic gas more weak to oxidation-reduction quality, sensitivity is not high; Therefore, development is easy to integrated and batch process, volume is little, need not heating, and is low in energy consumption, can detect the new gas sensor of organic gas, has realistic meanings.
Summary of the invention
The purpose of this invention is to provide a kind of gas sensor with pressure difference compensation function, this kind gas sensor is easy to integrated and batch process, volume is little, need not heating, and is low in energy consumption, can detect organic gas, and the result with pressure difference compensation function, detection accurately, reliable.
The technical matters that the present invention solves, the technical scheme that is adopted is: a kind of gas sensor with pressure difference compensation function, it consists of: be manufactured with two identical and adjacent cup-shaped pressure-sensitive structures on the silicon chip, each cup-shaped pressure-sensitive structure comprises a silicone strained diaphragm and passive pedestal around it, the surrounding edge of silicone strained diaphragm and the top of pedestal are fixedly linked, be distributed with four strain resistors in the silicone strained diaphragm and link to each other and constitute Wheatstone bridge, the position distribution of four strain resistors of Wheatstone bridge should make: when silicone strained diaphragm does not have strain, the Wheatstone bridge balance, when silicone strained diaphragm had strain, Wheatstone bridge was unbalance; The upper surface of the silicone strained diaphragm of one of them cup-shaped pressure-sensitive structural top is attached with and can absorbs the thin polymer film that tested gas expands deformation, as the gas sensing district; The upper surface of the silicone strained diaphragm of another cup-shaped pressure-sensitive structural top is exposed, as the pressure difference compensation district.
Its principle of work is: when gas sensor of the present invention is among the environment of tested gas, that adheres in the gas sensing district also promptly can absorb the thin polymer film that tested gas expands deformation to tested gas sensitization, expand deformation because of absorbing this tested gas, the stress that expansion deformation produces makes it that strain take place in the silicone strained diaphragm under it, thereby change the resistance value that is positioned at four strain resistors on the silicone strained diaphragm, because when making, the position of four strain resistor distributions makes in the Wheatstone bridge: during silicone strained diaphragm generation strain, Wheatstone bridge is unbalance.Thereby originally the electric bridge of balance is unbalance, produces a certain size potential difference (PD) at the electric bridge output terminal, and tested gas concentration is big more, and this potential difference (PD) is big more, can realize the detection of gas concentration thus.Select for use different thin polymer films can detect dissimilar gas.
When there was certain draught head in the both sides of sensing film (being made up of thin polymer film and silicone strained diaphragm), this draught head also can make sensing film produce deformation, thereby produces a pressure reduction undesired signal at gas sensing district output terminal.
The gas sensing district of gas sensor of the present invention and pressure difference compensation district are integrated on the silicon chip and are adjacent, can think that the draught head that they bear is identical, and owing to can absorb the thin polymer film that tested gas expands deformation except that not adhering in the pressure difference compensation district, other structures and gas sensing district are identical.Therefore, the deformation in pressure difference compensation district and output signal are only relevant with pressure reduction and irrelevant with the concentration of tested gas, and the output signal in gas sensing district is deducted the output signal in pressure difference compensation district, can get rid of the interference of pressure reduction factor.
The present invention compared with prior art the invention has the beneficial effects as follows:
One, because gas sensor of the present invention adopts the micro-electronic mechanical skill processing and fabricating, technology is reliably ripe, is easy to integrated and batch process, and device volume is little.
Need not heating when two, gas sensor of the present invention is worked, but working and room temperature is low in energy consumption.
Three, more or less dilatational strain is all arranged behind the corresponding organic solvent gas of most polymers film absorption, therefore, gas sensor of the present invention can detect organic gas.
Four, select for use different thin polymer films can make the sensor that detects gas with various easily.
Five, have pressure difference compensation function, can get rid of the interference of pressure reduction factor to the output result, testing result is more accurate, reliable.
Also be manufactured with identical the 3rd cup-shaped pressure-sensitive structure on the above-mentioned silicon chip, the cup-shaped pressure-sensitive structure in the 3rd cup-shaped pressure-sensitive structure and described gas sensing district is adjacent, and the upper surface of the silicone strained diaphragm at its top also adheres to the identical thin polymer film of one deck and gas sensing district; And use, lower sealing cover seals the thin polymer film that the silicone strained diaphragm upper surface at this cup-shaped pressure-sensitive structure and top thereof adheres to, and itself and ambient atmos isolated, as the temperature compensation district.
When temperature variation, certain thermal expansion deformation also can take place in the thin polymer film in the gas sensing district, thereby the output terminal in the gas sensing district produces a temperature disturbance signal.Because gas sensing district and temperature compensation district are integrated on the same silicon chip and are adjacent, can think that their temperature is identical, the thermal expansion deformation degree of the thin polymer film on two zones of event is also identical, but because the temperature compensation district is isolated by gland bonnet and ambient atmos, therefore, the deformation of the thin polymer film in the temperature compensation district is only relevant with temperature and irrelevant with the variation of ambient atmos, the output signal in gas sensing district is deducted the output signal in temperature compensation district, can get rid of the interference of temperature factor, realize the function of temperature compensation.
Like this, the present invention can also get rid of the interference of temperature factor when getting rid of the interference of pressure reduction factor.
The invention will be further described below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 is the cross-sectional view of the embodiment of the invention one.
Fig. 2 is the plan structure synoptic diagram of the embodiment of the invention one.
Fig. 3 is the perspective view of the embodiment of the invention one.
Fig. 4 is the cross-sectional view of the embodiment of the invention two.
Fig. 5 is the perspective view of the embodiment of the invention two.
Embodiment
Embodiment one
Fig. 1,2,3 illustrate, a kind of a kind of embodiment with gas sensor of pressure difference compensation function of the present invention is: utilize conventional photoetching at the back side of a silicon chip 1, two identical and adjacent cup-shaped cavitys 12 of MEMS such as etching (MEMS (micro electro mechanical system)) technology processing, the top of cup-shaped cavity 12 promptly constitutes silicone strained diaphragm 3, the xsect of cup-shaped cavity 12 is a square, the shape that also is silicone strained diaphragm 3 is a square, in silicone strained diaphragm 3, form the bar shaped strain resistor 5 of four equivalences with diffusion method, 6,7,8, these four bar shaped strain resistors 5,6,7,8 lay respectively at the middle part of square silicone strained diaphragm 3 four edges edge 9 and are parallel to each other; Form metal interconnecting wires 10 with evaporation, photoetching process, the bar shaped strain resistor 5,6,7,8 of four equivalences is linked to be Wheatstone bridge.Silicone strained diaphragm 3 upper surfaces at one of them cup-shaped cavity 12 top are formed one deck with the spin-coating method accumulation can be absorbed tested gas and expand the thin polymer film 4 of deformation as the gas sensing district; Silicone strained diaphragm 3 upper surfaces at another cup-shaped cavity 12 tops are exposed, and non-cohesive thin polymer film 4 is as the pressure difference compensation district.
In this example, when thin polymer film 4 expands deformation and causes silicone strained diaphragm 3 that strains take place because of absorbing tested gas, resistance 6,8 is parallel with contiguous square silicone strained diaphragm 3 edges 9, the stress that is subjected to mainly is the stress of its Width, and this resistance 6,8 will produce corresponding change in resistance; Two resistance 5,7 are vertical with contiguous square silicone strained diaphragm 3 edges 9 in addition, and the stress that is subjected to mainly is the stress of its length direction, and this two resistance 5,7 will produce the change in resistance with above resistance 6,8 opposite trend; Thereby make the Wheatstone bridge out of trim and to produce an output potential poor, tested gas concentration is big more, and this potential difference (PD) is big more, can realize the detection of gas concentration thus.
The present invention when implementing as required, four strain resistors 5 in the Wheatstone bridge, 6,7,8 distribution also can be: it is right that two resistance of relative (also being non-conterminous in the electrical connection) constitute two resistance respectively, two resistance are to laying respectively at the different stressed zone of silicone strained diaphragm 3 upper stress directions, promptly a resistance is to being positioned at the zone at close center on the silicone strained diaphragm 3, another resistance is to being positioned at 9 the zone of keeping to the side on the silicone strained diaphragm 3, when thin polymer film 4 expands deformation and causes silicone strained diaphragm 3 that strains take place because of absorbing tested gas, this two resistance is opposite to the stress direction that is subjected to, opposite variation takes place in the right resistance of two resistance, thereby make Wheatstone bridge transfer to unbalance and to produce an output potential poor, can realize the detection of gas concentration thus by balance.For making making more convenient, common two resistance are to being positioned on same the straight line.
Can also there be other multiple distribution mode the position of four strain resistors 5,6,7,8 in the Wheatstone bridge, but because when deformation takes place in silicone strained diaphragm 3, maximum stress concentrates on the middle part at silicone strained diaphragm 3 each edge 9 usually, therefore, the stress that four strain resistors 5,6,7,8 are experienced in this example is the most powerful, and the sensing effect is best.
Embodiment two
Fig. 4,5 illustrate, a kind of another kind of embodiment with gas sensor of pressure difference compensation function of the present invention is: utilize conventional photoetching on a silicon chip 1, three identical and adjacent cup-shaped cavitys 12 of MEMS such as etching (MEMS (micro electro mechanical system)) technology processing, the top of cup-shaped cavity 12 promptly constitutes silicone strained diaphragm 3, the xsect of this cup-shaped cavity 12 is a square, the shape that also is silicone strained diaphragm 3 is a square, in silicone strained diaphragm 3, form the bar shaped strain resistor 5 of four equivalences with diffusion method, 6,7,8, these four bar shaped strain resistors 5,6,7,8 lay respectively at the middle part of square silicone strained diaphragm 3 four edges edge 9 and are parallel to each other, again with evaporation, photoetching process forms metal interconnecting wires 10, with the bar shaped strain resistor 5 of four equivalences, 6,7,8 are linked to be Wheatstone bridge.Silicone strained diaphragm 3 upper surfaces at one of them cup-shaped cavity 12 top can be absorbed the thin polymer film 4 that tested gas expands deformation with spin-coating method accumulation formation one deck, as the gas sensing district; The upper surface of the silicone strained diaphragm 3 at cup-shaped cavity 12 tops adjacent with the gas sensing district is exposed, as the pressure difference compensation district; Silicone strained diaphragm 3 upper surfaces at another cup-shaped cavity 12 tops adjacent with the gas sensing district use the same method and form one deck and gas sensing district shape, size, material, all identical thin polymer film 4 in position, use respectively again, lower sealing cover 11 seals the thin polymer film 4 that silicone strained diaphragm 3 upper surfaces at this cup-shaped cavity 12 and top thereof adhere to respectively, itself and ambient atmos are isolated, as the temperature compensation district.
Obviously, a kind of gas sensor with pressure difference compensation function of embodiment two also has the function of temperature compensation simultaneously.
The thin polymer film 4 of accumulation of the present invention can be selected for use various to specific gas sensitive polymers film.As polyvinyl alcohol film to escaping gas sensitivities such as ethanol, acetate film to escaping gas sensitivities such as methyl alcohol, plasticon to escaping gas sensitivities such as toluene, polyethylene oxide/nickel acetate complex thin film to gas sensitizations such as carbon monoxide, to chloroform, the polyvinyl chloride film of escaping gas sensitivities such as phenixin, to pentane, ether, cyclohexane, the polyethylene film of escaping gas sensitivities such as phenixin, film, to ether, phenixin, acetone, the polyurethane film of escaping gas sensitivities such as acetate is to gasoline, benzene, dimethylbenzene, tetrahydrofuran, hexane, the rubber film of escaping gas sensitivities such as ether etc.Therefore, the present invention only needs in the technology of accumulation thin polymer film 4, and the thin polymer film that accumulation is different promptly can be made into different gas sensors, and other all technologies are then general to all gas sensor of the present invention.
Method accumulation such as the also available curtain coating of the thin polymer film 4 among the present invention, injection, but the easier control of spin-coating method; Cup-shaped cavity 12 can also be made of chemical corrosion method; Strain resistor 5,6,7,8 also can be made of ion implantation; The shape of silicone strained diaphragm 3 can also be circle and rectangle; The material of upper and lower gland bonnet 11 can also be silicon, pottery, metal, plastics etc.
Claims (6)
1, a kind of gas sensor with pressure difference compensation function, it consists of: be manufactured with two identical and adjacent cup-shaped pressure-sensitive structures on the silicon chip (1), each cup-shaped pressure-sensitive structure comprises a silicone strained diaphragm (3) and passive pedestal (2) around it, the top of the surrounding edge of silicone strained diaphragm (3) and pedestal (2) is fixedly linked, be distributed with four strain resistors (5 in the silicone strained diaphragm (3), 6,7,8) also continuous formation Wheatstone bridge, four strain resistors (5 of Wheatstone bridge, 6,7,8) position distribution should make: silicone strained diaphragm (3) is not when having strain, the Wheatstone bridge balance, silicone strained diaphragm (3) is when having strain, and Wheatstone bridge is unbalance; The upper surface of the silicone strained diaphragm (3) of one of them cup-shaped pressure-sensitive structural top is attached with the thin polymer film (4) that can absorb tested gas and expand deformation, as the gas sensing district; The upper surface of the silicone strained diaphragm (3) of another cup-shaped pressure-sensitive structural top is exposed, as the pressure difference compensation district.
2, a kind of gas sensor with pressure difference compensation function according to claim 1 is characterized in that: described cup-shaped pressure-sensitive structure is made with the MEMS technology.
3, a kind of gas sensor with pressure difference compensation function according to claim 1 is characterized in that: described strain resistor is made of (5,6,7,8) diffusion method or ion implantation.
4, a kind of gas sensor with pressure difference compensation function according to claim 1 is characterized in that: the shape of described silicone strained diaphragm (3) is any in circle, square or the rectangle.
5, a kind of gas sensor according to claim 1 with pressure difference compensation function, it is characterized in that: the adjacent area in described gas sensing district also is manufactured with the 3rd identical cup-shaped pressure-sensitive structure, and the upper surface of the silicone strained diaphragm (3) of the 3rd cup-shaped pressure-sensitive structural top also adheres to the identical thin polymer film of one deck and gas sensing district (4); And use, lower sealing cover (11) seals the thin polymer film (4) that silicone strained diaphragm (3) upper surface at this cup-shaped pressure-sensitive structure and top thereof adheres to, and itself and ambient atmos isolated, as the temperature compensation district.
6, a kind of gas sensor with pressure difference compensation function according to claim 5 is characterized in that: the material of described upper and lower gland bonnet (11) is any in silicon, metal, glass, pottery, the plastics.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100220153A CN100485381C (en) | 2006-10-09 | 2006-10-09 | Gas sensor with pressure difference compensation function |
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| CNB2006100220153A CN100485381C (en) | 2006-10-09 | 2006-10-09 | Gas sensor with pressure difference compensation function |
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| CN1936563A CN1936563A (en) | 2007-03-28 |
| CN100485381C true CN100485381C (en) | 2009-05-06 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101329291B (en) * | 2007-06-20 | 2012-01-11 | 中国科学院微电子研究所 | Gas-sensitive sensor |
| CN106168514A (en) * | 2016-08-28 | 2016-11-30 | 桂林市晶准测控技术有限公司 | A kind of pressure sensor device |
| CN109342321B (en) * | 2018-05-10 | 2019-11-01 | 山东格蓝云天环境科技有限公司 | A kind of fiber grating gas sensor array |
| CN108872086A (en) * | 2018-05-10 | 2018-11-23 | 山东格蓝云天环境科技有限公司 | A kind of fiber grating gas sensor of composite air-sensitive Intumescent polymer film |
| CN108896101B (en) * | 2018-05-10 | 2019-12-17 | 山东格蓝云天环境科技有限公司 | Industrial waste gas online monitoring system and method based on fiber bragg grating gas sensor array |
| CN108982905B (en) * | 2018-07-27 | 2021-09-07 | 杭州电子科技大学 | MEMS buffer structure capable of reducing gas flow speed and integrating flow sensor |
| CN109341932B (en) * | 2018-11-09 | 2024-02-02 | 青岛歌尔微电子研究院有限公司 | Pressure sensor chip and manufacturing method thereof |
| CN110568028A (en) * | 2019-10-18 | 2019-12-13 | 安徽伯华氢能源科技有限公司 | Hydrogen sensor |
| CN116818851B (en) * | 2023-08-25 | 2023-12-29 | 宁德时代新能源科技股份有限公司 | Gas sensor, battery cell, battery and gas concentration detection method |
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| Improvement in real time detection and selectivity ofphthalocyanine gas sensors dedicated to oxidizing pollutantsevaluation. J.Brunet等.Thin Solid Films,Vol.490 . 2005 |
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