CN100481355C - Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same - Google Patents
Polysilicon transverse crystallizing method and polysilicon thin-film transistor manufactured by the same Download PDFInfo
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- CN100481355C CN100481355C CNB2007100008677A CN200710000867A CN100481355C CN 100481355 C CN100481355 C CN 100481355C CN B2007100008677 A CNB2007100008677 A CN B2007100008677A CN 200710000867 A CN200710000867 A CN 200710000867A CN 100481355 C CN100481355 C CN 100481355C
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Abstract
A horizontal-crystallizing method of poly-silicon includes forming the first non-crystal silicon layer on substrate, oxidizing surface of the first non-crystal silicon layer to form silicon oxide layer, forming the second non-crystal silicon layer on silicon oxide layer, removing off the second non-crystal silicon layer and silicon oxide layer at preset block on substrate to from reserving block, carrying out the first laser crystallization process to crystallize preset block to be the first poly-silicon layer and to crystallize reserving block to be the second poly-silicon layer.
Description
Technical field
The present invention relates to a kind of polysilicon transverse crystallizing method; Specifically, the present invention relates to a kind of polysilicon transverse crystallizing method, be used to make polycrystalline SiTFT.
Background technology
(Liquid Crystal Display LCD) is widely used on the various electronic products such as computer, TV and mobile phone LCD.LCD drives with integrated circuit, and therefore, the speed of the transistor operation of integrated circuit becomes one of key factor that influences the LCD performance.
Compare with electric charge carrier in the amorphous silicon, the mobility (Mobility) of electric charge carrier is higher in the polysilicon.Therefore polysilicon type thin-film transistor is widely used in the integrated circuit of LCD.Desire increases the mobility (Mobility) of electric charge carrier in the polysilicon, can increase the crystallization grain size, or grain boundary (Grain Boundary) number in the raceway groove (Channel) of minimizing transistor component.
The crystallization technique of known low temperature polycrystalline silicon is to utilize the amorphous silicon type silicon thin film of laser beam (Line Beam) scanning film forming on substrate, is solidified into polysilicon again after making amorphous silicon fuse into liquid state.Yet, use the made polysilicon of said method, its crystallization grain size (Grain Size) is difficult for surpassing 0.3um, and form is the checkerboard distribution.That is the crystallization grain size be difficult for to increase, and the grain boundary number is difficult for reducing, and is difficult to increase the mobility of electric charge carrier in the polysilicon.Therefore, above-mentioned polymorphic silicon manufacture method still has improved space.
Summary of the invention
Main purpose of the present invention is to provide a kind of polysilicon transverse crystallizing method, is used to improve the size of crystal grain (Grain).
Another main purpose of the present invention is to provide a kind of polysilicon transverse crystallizing method, is used to control the position of grain boundary.
Another main purpose of the present invention is to provide a kind of polysilicon transverse crystallizing method, is used to reduce the energy density of the required laser of Crystallization Procedure.
Another main purpose of the present invention is to provide a kind of polycrystalline SiTFT, and it has and is parallel to the polysilicon layer that substrate laterally forms toward intercrystalline.
Polysilicon transverse crystallizing method step of the present invention comprises: form first amorphous silicon layer on substrate; The surface of oxidation first amorphous silicon layer is to form silicon oxide layer; On the silicon oxide layer surface, form second amorphous silicon layer; Remove second amorphous silicon layer and the silicon oxide layer of the predetermined block on the substrate, on substrate, to form reservation block with first amorphous silicon layer, silicon oxide layer and second amorphous silicon layer; And carry out the first laser crystallization operation, and make the first amorphous silicon layer crystallization of predetermined block become first polysilicon layer, make first amorphous silicon layer, the amorphous silicon in the silicon oxide layer and the second amorphous silicon layer cocrystallization that keep block become second polysilicon layer.Second polysilicon layer is begun by the edge that keeps block, is parallel to substrate, laterally carries out crystallization toward in.
Oxidation step comprises first amorphous silicon layer is exposed in the aerobic environment.The thickness that silicon oxide layer formation step comprises the controlled oxidation silicon layer exists
Extremely
In the scope, the concentration of oxygen atom is greater than 5 * 10 in the silicon oxide layer
21Atomicity/cubic centimetre.Second amorphous silicon layer formation step comprises the thickness of controlling second amorphous silicon layer and exists
Extremely
Scope in.
Remove step and comprise second amorphous silicon layer and the silicon oxide layer that uses photoetch operation (photo etching process) to remove predetermined block.The first laser crystallization process comprises the oxygen that makes in the silicon oxide layer that keeps block and is dissolved in second polysilicon layer.The employed laser energy density of the first laser crystallization operation is at 200mJ/cm
2To 400mJ/cm
2Scope in.
Polysilicon transverse crystallizing method of the present invention also comprises and carries out the second laser crystallization operation, and the crystal grain in first polysilicon layer is increased.The employed laser energy density of the second laser crystallization operation is less than the employed laser energy density of the first laser crystallization operation, and at 160mJ/cm
2To 360mJ/cm
2Scope in.
Polycrystalline SiTFT of the present invention comprises substrate and substrate polysilicon layer.The substrate polysilicon layer is formed at substrate surface, comprises first polysilicon layer and second polysilicon layer.Second polysilicon layer is adjacent with first polysilicon layer, and second polysilicon layer begins by the edge of second polysilicon layer, is parallel to substrate, laterally forms toward intercrystalline.The oxygen concentration at arbitrary place is greater than first polysilicon layer in second polysilicon layer.
First polysilicon layer is source/drain region.Second polysilicon layer is a channel region.Substrate comprises an insulated substrate.The oxygen concentration at arbitrary place is greater than 5 * 10 in second polysilicon layer
20Atomicity/cubic centimetre.Second polysilicon layer exists toward the substrate degree of depth from the surface
Extremely
Scope in oxygen concentration greater than 5 * 10
21Atomicity/cubic centimetre.The Cmax of oxygen is present in second polysilicon layer from the surface toward the substrate degree of depth at least in second polysilicon layer
The place.
Description of drawings
Fig. 1 is the preferred embodiment flow chart of polysilicon transverse crystallizing method of the present invention;
Fig. 2 is the embodiment schematic diagram that first amorphous silicon layer of the present invention forms step;
Fig. 3 is the embodiment schematic diagram that silicon oxide layer of the present invention forms step;
Fig. 4 is the embodiment schematic diagram that second amorphous silicon layer of the present invention forms step;
Fig. 5 is the embodiment schematic diagram of removal step of the present invention;
Fig. 6 is the embodiment schematic diagram of the first laser crystallization process of the present invention;
Fig. 7 is the embodiment schematic diagram of polycrystalline SiTFT of the present invention;
Fig. 8 is another preferred embodiment flow chart of polysilicon transverse crystallizing method of the present invention;
Fig. 9 is the embodiment schematic diagram of top of the present invention grid type polycrystalline SiTFT.
Wherein, Reference numeral:
100 substrates
200 polycrystalline SiTFTs
220 top grid type polycrystalline SiTFTs
310 first amorphous silicon layers
330 second amorphous silicon layers
400 laser
510 silicon oxide layers
530 gate insulation layers
600 grid metal levels
710 predetermined blocks
730 keep block
820 are parallel to substrate laterally toward interior direction
900 substrate polysilicon layers
910 first polysilicon layers
930 second polysilicon layers
Embodiment
The invention provides a kind of polysilicon transverse crystallizing method, and use the polycrystalline SiTFT that this method for crystallising is made.
Be illustrated in figure 1 as polysilicon transverse crystallizing method embodiment flow chart of the present invention.Step 3001 is included in and forms first amorphous silicon layer on the substrate.Step 3003 comprises the surface of oxidation first amorphous silicon layer, to form silicon oxide layer.Step 3005 is included in and forms second amorphous silicon layer on the silicon oxide layer surface.Step 3007 comprises second amorphous silicon layer and the silicon oxide layer of removing the predetermined block on the substrate, keeps block to form on substrate.Step 3009 comprises carries out the first laser crystallization operation, makes fate agllutination crystalline substance become first polysilicon layer, makes reserved area agllutination crystalline substance become second polysilicon layer.Each step below is described.
Preferred embodiment as shown in Figure 2 at first, forms first amorphous silicon layer 310 on substrate 100.In preferred embodiment, substrate is an insulated substrate, and is selected from macromolecule, oxidized metal, glass, and non-conducting material such as pottery.Form first amorphous silicon layer 310 and comprise modes such as using chemical vapour deposition (CVD).
As shown in Figure 3, on substrate 100, form after first amorphous silicon layer 310, follow the surface of oxidation first amorphous silicon layer 310, to form silicon oxide layer 510.In preferred embodiment, first amorphous silicon layer 310 is exposed in the aerobic environments such as comprising cleaned air and oxygen, to carry out oxidation step.When forming silicon oxide layer 510, comprise that then the thickness of controlled oxidation silicon layer 510 exists
Extremely
Scope in, and in the silicon oxide layer 510 concentration of oxygen atom greater than 5 * 10
21Atomicity/cubic centimetre.
As shown in Figure 4, form after the silicon oxide layer 510, then on silicon oxide layer 510 surfaces, form second amorphous silicon layer 330.In preferred embodiment, when forming second amorphous silicon layer 330, comprise the thickness of controlling second amorphous silicon layer 330 and exist
Extremely
Scope in.Form second amorphous silicon layer 330 and comprise modes such as using chemical vapour deposition (CVD).
As shown in Figure 5, on silicon oxide layer 510 surfaces, form after second amorphous silicon layer 330, then remove second amorphous silicon layer 330 and silicon oxide layer 510 of predetermined block 710 on the substrate 100, have first amorphous silicon layer 310 on substrate 100, to form, silicon oxide layer 510, with the reservation block 730 of second amorphous silicon layer 330.In preferred embodiment, when second amorphous silicon layer 330 of the predetermined block 710 of removal and silicon oxide layer 510, comprise and use the photoetch operation.
Remove after second amorphous silicon layer 330 and silicon oxide layer 510 of the predetermined block 710 on the substrate 100, then carry out the first laser crystallization operation.Utilize the irradiation of laser 400, make as shown in Figure 6 first amorphous silicon layer, 310 crystallizations of predetermined block 710 become as shown in Figure 7 first polysilicon layer 910, make first amorphous silicon layer 310 that keeps block 730 as shown in Figure 5, the amorphous silicon in the silicon oxide layer 510, become as shown in Figure 7 second polysilicon layer 930 with second amorphous silicon layer, 330 cocrystallizations.In preferred embodiment, the first laser crystallization process comprises the oxygen that makes in the silicon oxide layer 510 that keeps block 730 and is dissolved in second polysilicon layer 930.The energy density of the employed laser 400 of the first laser crystallization operation is at 200mJ/cm
2To 400mJ/cm
2Scope in.
Because the existence of silicon oxide layer 510 can make the required energy of laser crystallization reduce.Therefore, it is lower than making the required laser energy of predetermined block 710 complete meltings to make the required laser energy of complete melting.That is, in the preferred embodiment as Fig. 6, when the laser 400 of irradiation identical energy density keeps block 730 and predetermined block 710 with complete melting, the temperature that keeps block 730 will be higher than the temperature of predetermined block 710.Therefore, keep block 730 and 710 of predetermined blocks the formation temperature gradient difference is made second polysilicon layer 330 as shown in Figure 5, begin, laterally carry out crystallization toward interior direction 820 to be parallel to substrate 100 by the edge that keeps block 730.
Required energy reduces because the existence of silicon oxide layer 510 can make laser crystallization, therefore, can reduce the required energy density of laser radiation.In addition, the crystallization that utilizes the transverse temperature gradient difference with respect to substrate 100 to be produced can have bigger crystallization crystal grain (Grain) size, and the position of control grain boundary.Therefore, can increase the crystallization grain size, grain boundary (Grain Boundary) number in the raceway groove (Channel) of minimizing transistor component, and then the mobility (Mobility) of the interior electric charge carrier of raising polysilicon.As shown in Figure 7, in preferred embodiment, the position of grain boundary is positioned at the central authorities of second polysilicon layer 930.
Preferred embodiment flow chart of the present invention as shown in Figure 8, in preferred embodiment, polysilicon transverse crystallizing method of the present invention also comprises step 3011.Step 3011 comprises carries out the second laser crystallization operation, and the crystal grain in first polysilicon layer is increased, and makes too high in resistance with the tiny crystal grains of avoiding first polysilicon layer.In preferred embodiment.The employed laser energy density of the second laser crystallization operation is less than the employed laser energy density of the first laser crystallization operation, and at 160mJ/cm
2To 360mJ/cm
2Scope in.One laser energy density can reach the effect that crystal grain increases, and aforesaid side crystallization melt back is disappeared.
By above-described polysilicon transverse crystallizing method, can be made into polycrystalline SiTFT, have and be parallel to the polysilicon layer that substrate laterally forms toward intercrystalline.Preferred embodiment as shown in Figure 7, polycrystalline SiTFT 200 of the present invention comprises substrate 100 and substrate polysilicon layer 900.Substrate polysilicon layer 900 is formed at substrate 100 surfaces, comprises first polysilicon layer 910 and second polysilicon layer 930.Second polysilicon layer 930 is adjacent with first polysilicon layer 910, and second polysilicon layer 930 begins by the edge of second polysilicon layer 930, is parallel to substrate 100, laterally forms toward intercrystalline.The oxygen concentration at arbitrary place is greater than first polysilicon layer 910 in second polysilicon layer 930.
In preferred embodiment, can further use above-mentioned polycrystalline SiTFT 200 to make top grid type polycrystalline SiTFT.Preferred embodiment as shown in Figure 9, top grid type polycrystalline SiTFT 220 comprises polycrystalline SiTFT 200, gate insulation layer 530 and grid metal level 600.Polycrystalline SiTFT 200 comprises substrate 100, substrate polysilicon layer 900.Substrate polysilicon layer 900 comprises first polysilicon layer 910 and second polysilicon layer 930.Gate insulation layer 530 is covered on first polysilicon layer 910 and second polysilicon layer 930.Grid metal level 600 is positioned at second polysilicon layer, 930 tops on the gate insulation layer 530.
The present invention is described by above-mentioned related embodiment, yet the foregoing description is only for implementing example of the present invention.Must be pointed out that the embodiment that has described does not limit the scope of the invention.On the contrary, being contained in spirit of claims and modification and the equivalent in the scope all is contained in the scope of the present invention.
Claims (16)
1. the manufacture method of a polycrystalline SiTFT is characterized in that, comprises following steps:
On a substrate, form one first amorphous silicon layer;
The surface of this first amorphous silicon layer of oxidation is to form one silica layer;
On this silicon oxide layer surface, form one second amorphous silicon layer;
Remove this second amorphous silicon layer and this silicon oxide layer of the predetermined block of one on this substrate, on this substrate, to form a reservation block, wherein should be scheduled to the both sides that block is positioned at this reservation block with this first amorphous silicon layer, this silicon oxide layer and this second amorphous silicon layer; And
Carry out one first laser crystallization operation, make this first amorphous silicon layer crystallization of this predetermined block become one first polysilicon layer, make this reservation block this first amorphous silicon layer, the amorphous silicon in this silicon oxide layer, become one second polysilicon layer with this second amorphous silicon layer cocrystallization, wherein this second polysilicon layer is begun by the edge of this reservation block, be parallel to this substrate, laterally carry out crystallization, and in this reservation block, be formed centrally crystalline boundary toward in.
2. method according to claim 1, it is characterized in that, this first polysilicon layer that the channel region that this second polysilicon layer that crystallizes at this reserved area piece is a polycrystalline SiTFT, the fate piece in these reservation block both sides crystallize into is the source/drain region of this polycrystalline SiTFT.
3. method according to claim 1 is characterized in that, this oxidation step comprises this first amorphous silicon layer of exposure in aerobic environment.
4. method according to claim 1 is characterized in that, this silicon oxide layer form step comprise control this silicon oxide layer thickness 25
To 100
Scope in, the concentration of oxygen atom is greater than 5 * 10 in this silicon oxide layer
21Atomicity/cubic centimetre.
5. method according to claim 1 is characterized in that, this second amorphous silicon layer form step comprise control this second amorphous silicon layer thickness 20
To 100
Scope in.
6. method according to claim 1 is characterized in that, this removal step comprises this second amorphous silicon layer and this silicon oxide layer that uses a photoetch operation to remove this predetermined block.
7. method according to claim 1 is characterized in that, the oxygen that this first laser crystallization process comprises in this silicon oxide layer that makes this reservation block is dissolved in this second polysilicon layer.
8. method according to claim 1 is characterized in that, the employed laser energy density of this first laser crystallization operation is at 200mJ/cm
2To 400mJ/cm
2Scope in.
9. method according to claim 1 is characterized in that, also comprises to carry out one second laser crystallization operation, and the crystal grain in this first polysilicon layer is increased.
10. method according to claim 9 is characterized in that, the employed laser energy density of this second laser crystallization operation is less than the employed laser energy density of this first laser crystallization operation, and at 160mJ/cm
2To 360mJ/cm
2Scope in.
11. a polycrystalline SiTFT is characterized in that, comprises:
One substrate;
One substrate polysilicon layer, it is formed at this substrate surface, comprises:
One first polysilicon layer; And
One second polysilicon layer, itself and this first polysilicon layer is adjacent, and this second polysilicon layer is begun by the edge of this second polysilicon layer, be parallel to this substrate, laterally form toward intercrystalline, wherein, on this substrate, form one first amorphous silicon layer, the surface of this first amorphous silicon layer of oxidation, to form one silica layer, on this silicon oxide layer surface, form one second amorphous silicon layer, remove this second amorphous silicon layer and this silicon oxide layer of the predetermined block of one on this substrate, on this substrate, form and have this first amorphous silicon layer, one of this silicon oxide layer and this second amorphous silicon layer keeps block, should be scheduled to the both sides that block is positioned at this reservation block, utilize the irradiation of laser, and make the first amorphous silicon layer crystallization of predetermined block become first polysilicon layer, make first amorphous silicon layer that keeps block, amorphous silicon in the silicon oxide layer, become second polysilicon layer with the second amorphous silicon layer cocrystallization, so that the oxygen concentration at the interior arbitrary place of this second polysilicon layer is greater than this first polysilicon layer.
12. transistor according to claim 11 is characterized in that, the oxygen concentration at arbitrary place is greater than 5 * 10 in this second polysilicon layer
20Atomicity/cubic centimetre.
13. transistor according to claim 11 is characterized in that, surperficial certainly past this substrate degree of depth of this second polysilicon layer is 20
To 100
Scope in oxygen concentration greater than 5 * 10
21Atomicity/cubic centimetre.
14. transistor according to claim 11 is characterized in that, the Cmax of oxygen is present in this second polysilicon layer from the surperficial past substrate degree of depth at least 35 in this second polysilicon layer
The place.
15. transistor according to claim 11, it is characterized in that, this second polysilicon layer that crystallizes at this reserved area piece is the channel region of this polycrystalline SiTFT, and this first polysilicon layer that the fate piece in these reservation block both sides crystallizes into is the source/drain region of this polycrystalline SiTFT.
16. transistor according to claim 11 is characterized in that, the thickness of the channel region of this polycrystalline SiTFT is greater than the thickness of the source/drain region of this polycrystalline SiTFT.
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