CN100476909C - Electrooptic apparatus substrate and method of examining such a substrate, electrooptic apparatus and electronic equipment - Google Patents

Electrooptic apparatus substrate and method of examining such a substrate, electrooptic apparatus and electronic equipment Download PDF

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Publication number
CN100476909C
CN100476909C CNB2005800269816A CN200580026981A CN100476909C CN 100476909 C CN100476909 C CN 100476909C CN B2005800269816 A CNB2005800269816 A CN B2005800269816A CN 200580026981 A CN200580026981 A CN 200580026981A CN 100476909 C CN100476909 C CN 100476909C
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signal
pixel
electromotive force
electric potential
electro
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CN101002245A (en
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石井达也
山地重文
水垣浩一
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

An electrooptic apparatus substrate and examination method therefor can be provided which can implement an examination without requiring bringing a probe into contact thereto from the outside and with satisfactory measuring accuracy. A substrate 1 of the present invention includes a video line 7 and transmission gate portion 6 through multiple switching elements for writing a first potential signal in multiple pixels through a signal line. The substrate 1 further includes a display data reading circuit portion 4 having a differential amplifier 4a for lowering a lower potential and heightening a higher potential and outputting it to the signal line and a transmission gate portion 6 and video line 7 for reading the first potential signal and a reference second potential signal.

Description

Electro-optical device substrate and detection method thereof and electro-optical device and electronic equipment
Technical field
The present invention relates to electro-optical device substrate and detection method thereof and electro-optical device and electronic installation.Especially, the present invention relates to wherein in a plurality of pixels, provide electro-optical device substrate and detection method and the electro-optical device and the electronic installation of a plurality of switchgears.
Background technology
Such as the display device of liquid crystal apparatus traditionally and be widely used in the equipment such as portable phone and projector.Liquid crystal display with TFT (thin film transistor (TFT)) comprises TFT substrate and covered substrate, these two kinds of substrates are pasted mutually, and this equipment has the liquid crystal that is sealed between these two substrates.Generally speaking, finished product is detected, to check prepared liquid crystal apparatus.For example, can be with the predetermined picture signal as video data input, projection be shown on the liquid crystal apparatus, thus video data and check whether there is any defective pixels exactly.
Yet from the viewpoint of management manufacturing step, the method that detects finished product is not preferred.This is to exist because of the detection to ropy product to postpone, and reason is just to detect this ropy product after the step of making substrate.
The detection that has increased like this product of poor quality feeds back to the time that step administrative institute needs.Therefore, the low-producing cycle is elongated, has also increased manufacturing cost.And in sample, since elongated from estimating this sample to feeding back to the time of designing program, R﹠D cycle and R﹠D costs may be increased.In addition, after having finished this product to the maintenance difficult of ropy point.
Be to wish within the step of making this substrate, to detect ropy point, particularly defective pixels in the display device accordingly.
One of this detection method that is proposed is the technology (for example referring to patent documentation 1) by detecting device being contacted with the electrode pads of liquid crystal display and providing the electric current of scheduled volume to detect liquid crystal display to this electrode.In addition, proposed another kind of technology, wherein considered the capacitance characteristic of pixel, the voltage of scheduled volume has been applied to each pixel on the TFT substrate, and according to the function (for example referring to patent documentation 2) of this TFT of wave test of discharge current and sparking voltage.
In addition, proposed another kind of technology, wherein, detected the work (for example referring to patent documentation 3) of each pixel motor thus by utilizing the potential change amount that detects pixel electrode on the TFT substrate corresponding to the comparative electrode that is used to detect of pixel electrode.
[patent documentation 1]: Japanese Unexamined Patent Application communique No.5-341302;
[patent documentation 2]: Japanese Unexamined Patent Application communique No.7-333278; With
[patent documentation 3]: Japanese Unexamined Patent Application communique No.10-104563.
Summary of the invention
Problem to be solved by this invention
Yet, utilizing disclosed technology in patent documentation 1 and 3, this pick-up unit need mechanically obtain positional precision, so that predetermined detector is contacted or approaching with electrode pads from the outside of substrate.Therefore, the problem that the detection time of the length of needs occurred in order to obtain the mechanical registeration precision.In addition, these methods may be unsuitable for the high-resolution liquid crystal display device, and this is because thin detector is contacted with many electrode pads.
Disclosed method is subjected to the influence of capacitive component between liquid crystal display and the measuring equipment in the patent documentation 2, and this capacitive component is the electric capacity in source electrode line, image signal line, the electrode pads terminal etc. for example.Therefore, the problem of gratifying measuring accuracy has appearred can not obtaining when pixel has smaller capacitive.
Consider the problems referred to above, proposed the present invention, the purpose of this invention is to provide electro-optical device and detection method thereof, thus can needn't with the contacted situation of outer locator under realize detection with gratifying measuring accuracy.
The means of dealing with problems
Electro-optical device substrate of the present invention comprises cross one another a plurality of sweep trace and a plurality of signal wire, the a plurality of pixels that are provided with according to the intersection point of these a plurality of sweep traces and a plurality of signal wires, and the amplifying unit that is electrically connected with signal wire, the signal that is input to pixel is input to this amplifying unit by signal wire, thus the electromotive force of amplification input signal.
This amplifying unit can be electrically connected with a pair of described signal wire, and amplifies from the electric potential difference between this signal that each signal wire signal wire is provided.
Electro-optical device substrate of the present invention comprises cross one another a plurality of sweep trace and a plurality of signal wire, be set to a plurality of pixels of matrix according to the intersection point of these a plurality of sweep traces and a plurality of signal wires, each a plurality of on-off element that provide in a plurality of pixels are provided, also comprise amplifying unit, first electric signal is input to this amplifying unit by first signal wire in described a plurality of signal wires, and input is as second electric potential signal of reference potential, and the data-reading unit that is used for the output potential signal from amplifying unit output is read described a plurality of signal wires.In this case, this amplifying unit can compare first electric potential signal and second electric potential signal, and, if first electric potential signal is little, then reduce the electromotive force of described signal wire, and the output potential signal after will reducing outputs to described signal wire, if first electric potential signal is big, then improve the electromotive force of described signal wire, and the output potential signal after will improving outputs to described signal wire.
Under this structure, a kind of electro-optical device substrate and detection method thereof can be provided, it need not to make detector just can realize detecting with gratifying measuring accuracy from outside contacting with this substrate.
In electro-optical device substrate of the present invention, first electric potential signal can have the electromotive force of signal that offers all or part of pixel of these a plurality of pixels by described a plurality of on-off elements, and the electromotive force of second electric potential signal can be the electromotive force that provides from the reference signal line.
Under this structure, can detect fault pixel in each pixel as fault.
In electro-optical device substrate of the present invention, first electric potential signal and second electric potential signal can have the electromotive force of signal that offers all or part of pixel of these a plurality of pixels by described a plurality of on-off elements, and first electric potential signal and second electric potential signal can be offered corresponding amplifying unit by first signal wire and the secondary signal line of described a plurality of signal wires respectively.
Under this structure, if any one in two pixels breaks down, because the electromotive force of two pixels relatively then can detect this fault.
In electro-optical device substrate of the present invention, this amplifying unit can be a differential amplifier.
In electro-optical device substrate of the present invention, this data-reading unit can have the differential amplifier that is used to export the electric potential signal that reads.
Under this structure, can clarify and export the electric potential difference of two signal wires.
In electro-optical device substrate of the present invention, each in described a plurality of pixels can have additional capacitors.
Under this structure, can detect the fault in the additional capacitor.
Electro-optical device substrate of the present invention may further include the pre-charge circuit that links to each other with described a plurality of signal wires, so that the electromotive force of described a plurality of signal wires is pre-charged to predetermined potential.
Under this structure, the present invention can be used to detect characteristic.
Electro-optical device substrate of the present invention may further include and is used to described a plurality of pixel that the image signal line of picture signal is provided, and a plurality of transmission gates that are used for the picture signal that image signal line provides is offered described a plurality of signal wires, wherein this data-reading unit comprises described image signal line.
Under this structure, control a plurality of transmission gates and make it possible to picture signal is offered video signal cable and can be from video signal cable reading images signal.
Provide electro-optical substance in the electro-optical device of the present invention between a pair of substrate, this electro-optical device can be included in this to the described electro-optical device substrate on one of substrate.
Electronic equipment of the present invention comprises electro-optical device of the present invention.
Under this structure, electro-optical device or electronic equipment with electro-optical device substrate can be provided, it can need not to make detector realize detecting with gratifying measuring accuracy under outside situation contacted with it.
A kind ofly be used for electro-optical device substrate detecting method of the present invention, this electro-optical device substrate has cross one another a plurality of sweep trace and a plurality of signal wire, a plurality of pixels of the matrix form that is provided with at the intersection point of described a plurality of sweep traces and a plurality of signal wires, and be respectively each a plurality of on-off element that provide in a plurality of pixels, this method comprises: step is provided, first electric potential signal is offered pixel corresponding to one of signal wire, read step, read first electric potential signal that offers this pixel by signal wire, the output step, to have the electromotive force that is different from first electric potential signal and compare with first electric potential signal that reads as second electric potential signal of reference signal, and, if first electric potential signal is little, then reduce the electromotive force of this signal wire and will reduce after the output potential signal output to described signal wire, if first electric potential signal is big, then improve the electromotive force of described signal wire and will improve after the output potential signal output to described signal wire, and comparison step, the output potential signal that first electric potential signal and the output step that provide step to provide are exported compares.
Under this structure, can need not to make detector to realize the detection method of this electro-optical device under outside and the contacted situation of electro-optical device with gratifying measuring accuracy.
Electro-optical device substrate detecting method of the present invention may further include precharge step, makes described signal wire have predetermined pre-charge potential before read step.
Under this structure, can detect the characteristic of electro-optical device substrate.
In electro-optical device substrate detecting method of the present invention, predetermined pre-charge potential can be the intermediate electric potential between first electric potential signal and second electric potential signal.
Under this structure, first and second electric potential signals that write can be compared with respect to this intermediate electric potential.
In electro-optical device substrate detecting method of the present invention, each in described a plurality of pixels preferably has additional capacitors.
Under this structure, can detect the fault of additional capacitor.
In electro-optical device substrate detecting method of the present invention, the electromotive force that the electromotive force of second electric potential signal can provide for the outside.
Under this structure, can for each pixel detection fault pixel as fault.
In electro-optical device substrate detecting method of the present invention, provide in the step described, first and second electric potential signals preferably have the electromotive force that offers the signal of two pixels by a plurality of on-off elements, and in read step, preferably two signal wires by separately read first and second electric potential signals.
Under this structure,,, then can detect this fault because the electromotive force of two pixels is compared if there is fault in any one in described two pixels.
Preferably, in electro-optical device substrate detecting method of the present invention, step is being provided, one in described two pixels is handled as examining pixel, and high signal is offered this as first electric potential signal examined pixel, and in described two pixels another handled as benchmark pixel, and low signal is offered described benchmark pixel as second electric potential signal, in comparison step, if from examining the electric potential signal that pixel reads is low, then determine the additional capacitor fault.
Under this structure, can determine the fault of pixel capacitance.
In electro-optical device substrate detecting method of the present invention, the electromotive force of the public fixed electorde of additional capacitor can be lower than the electromotive force when described low signal is provided.
Under this structure, make and read electromotive force and become and be lower than reference potential, thereby the change in voltage that produces owing to leak current fault occurs.
In electro-optical device substrate detecting method of the present invention, predetermined pre-charge potential can be greater than the described electromotive force of output step raising.
Under this structure, first and second electric potential signals that write can be compared with respect to described higher electromotive force.
In electro-optical device substrate detecting method of the present invention, in step is provided, one in described two pixels can be handled as examining pixel, and low signal can be offered this as first electromotive force and be examined pixel, in described two pixels another can be handled as benchmark pixel, high signal can be offered benchmark pixel as second electromotive force, in comparison step, if, then determine to have fault in this on-off element from being examined electric potential signal that pixel reads for high.
Under this structure, can determine to have fault in the on-off element of pixel.
In electro-optical device substrate detecting method of the present invention, in step is provided, one in described two pixels can be handled as examining pixel, and low or high signal can be offered this as first electromotive force and be examined pixel, and in described two pixels another can be handled as benchmark pixel, and the intermediate electric potential signal with the electromotive force between the electromotive force of first low signal and high signal can be offered benchmark pixel as second electromotive force, in comparison step, if inconsistent, then can determine the fault of described on-off element or additional capacitor from being examined the electromotive force and first electromotive force that pixel reads.
Under this structure, can detect the fault of the electric capacity or the on-off element of pixel.
In electro-optical device substrate detecting method of the present invention, preferably described two signal wires are adjacent one another are.
Under this structure, because neighbor is subjected to the influence of external noise with being equal to, so in the output step, be not easy to occur maloperation.
In electro-optical device substrate detecting method of the present invention, preferably provide step, read step, output step and comparison step to described a plurality of pixels successively.
Under this structure, can detect all pixels that need in the matrix.
Industrial applicibility
The present invention not only can be used for the liquid crystal display of the above-mentioned TFT of comprising, can also be used for the display device of driven with active matrix.
Description of drawings
Fig. 1 is the circuit diagram according to the device substrate of the liquid crystal display of first embodiment;
Fig. 2 is the equivalent circuit diagram according to the pixel of first embodiment;
Fig. 3 is the circuit diagram according to the differential amplifier of first embodiment;
Fig. 4 is the structural drawing according to the detection system of first embodiment;
Fig. 5 is the process flow diagram of expression according to the example of the testing process of first embodiment;
Each expression of each figure that Fig. 6 comprises is according to the pixel data state in the pixel of writing of first embodiment;
Fig. 7 is the sequential chart of explanation according to the read operation of first embodiment;
Fig. 8 is the sequential chart according to another read operation of first embodiment;
Fig. 9 is the sequential chart according to another read operation of first embodiment;
Figure 10 represents to write the pixel data stateful example in the pixel;
Figure 11 is the circuit diagram of expression according to the variation example of the circuit of the device substrate of first embodiment;
Figure 12 is the circuit diagram according to the device substrate of the liquid crystal display of second embodiment of the invention;
Figure 13 is the sequential chart of explanation according to the read operation of second embodiment;
Figure 14 is the circuit diagram of device substrate of the variation example of second embodiment;
Figure 15 is the circuit diagram according to the device substrate of the liquid crystal display of third embodiment of the invention;
Figure 16 is the sequential chart of explanation according to the read operation of the 3rd embodiment;
Figure 17 is the circuit diagram that connects the improved form of door among expression Figure 15;
Figure 18 is the outside drawing of personal computer, and it is for using the example of electronic installation of the present invention;
Figure 19 is the outside drawing of portable phone, and it is for using another electronic installation example of the present invention;
Figure 20 is the outside drawing of personal computer, and it is for using another electronic installation example of the present invention.
Reference numeral
1 and the 1A device substrate
2 display component array parts
3 pre-charge circuit parts
4 video datas read circuit part
The 4a differential amplifier
6 transmission gate portion
7 image signal lines
Embodiment
Below embodiment of the invention will be described with reference to drawings.
Herein, the active array type display apparatus substrate that will be used for liquid crystal display is described as the example of electro-optic device substrate of the present invention.
First embodiment
At first, Fig. 1 is the circuit diagram according to the component substrate of the liquid crystal display of first embodiment of the invention.The component substrate of this liquid crystal display is the active array type display apparatus substrate.Component substrate 1 comprises that display component array part 2, pre-charge circuit part 3 and video data read circuit part 4.This display component array part 2 is as the display part, and it comprises a plurality of pixel cells that form two-dimentional m * n matrix.Herein, m and n are integer.Also comprise X driver portion 5a, Y driver portion 5b, transmission gate portion 6 and image signal line 7 in this component substrate, so that drive a plurality of pixel 2a that arrange along the directions X (horizontal direction) and the Y direction (vertical direction) of this display element array portion 2.X driver portion 5a, Y driver portion 5b, transmission gate portion 6 and image signal line 7 are as data write unit and data-reading unit.
This transmission gate portion 6 provides from the pixel data signal of image signal line 7 inputs in response to the output timing signal from X driver portion 5a.This image signal line 7 have be used for signal offer matrix form display component array part 2 odd column signal wire and be used for signal is offered the signal wire of the even column of this display component array part, this image signal line 7 is connected to corresponding terminal ino and ine.
This display component array part 2 has matrix, it comprise first row that begin from the right side, secondary series ... and the n row multiply by first row that begins from the top, second row ... and m is capable.Yet for the purpose of simplifying the description, Fig. 1 has represented to comprise the practical circuit of the pixel of 4 (row) * 6 (OK) matrix forms.
Be used to make each source electrode line to be precharged as predetermined potential pre-charge circuit part 3 to carry out Characteristics Detection, as hereinafter described.
This video data reads circuit part 4 and has a plurality of differential amplifier 4a, and each differential amplifier is connected to the pair of source polar curve, and it comprises odd column source electrode line S (odd number) and even column source electrode line S (even number) in the two-dimensional matrix.Provide this video data to read circuit part 4 on the device substrate of the LCD panel of driven with active matrix, it plays the effect of the test circuit that is used to detect.
Then, will describe pixel 2a, it is the unit display element of display component array part 2.Fig. 2 is the equivalent circuit diagram according to a pixel that is used as a storage unit of present embodiment.
Each pixel 2a comprises thin film transistor (TFT) (hereinafter being called TFT) 11, liquid crystal capacitance C1c and the additional capacitor Cs in parallel with this liquid crystal capacitance C1c that plays the on-off element effect.End on each of liquid crystal capacitance C1c and additional capacitor Cs is connected to the drain electrode end of TFT 11.The other end of additional capacitor Cs is connected to public fixed potential CsCOM.Comprise semiconductor substance in component substrate 1, for example under the situation of monocrystalline silicon or semiconducting compound, transistor can play the effect of the on-off element of each pixel.The gate terminal g of TFT11 is connected to the sweep trace G from Y driver 5b.When connecting this TFT11 in response to the predetermined voltage signals of the gate terminal g that is input to TFT11, the voltage that is applied to the source terminal s of the TFT11 that links to each other with source electrode line S is applied to liquid crystal capacitance C1c and additional capacitor Cs, thereby the predetermined potential that provided can be provided.
Fig. 3 is the circuit diagram that video data reads the differential amplifier 4a of circuit part 4.In Fig. 3, for n pixel on the direction of described two-dimensional matrix provides (n/2) differential amplifier 4a (wherein n is an even number), this direction is a directions X in this case.Therefore, should link to each other with the corresponding multiple source polar curve of the pixel of n row by (n/2) differential amplifier 4a.
Each differential amplifier 4a comprises two p channel transistors 21 and 22 and two N channel transistors 23 and 24.First series circuit that comprises transistor 21 and 23 is in parallel with second series circuit that comprises transistor 22 and 24.
The gate terminal of transistor 21 and transistor 22 link to each other with tie point so of 24.The gate terminal of transistor 22 and transistor 21 link to each other with 23 tie point se.The gate terminal of transistor 23 and transistor 22 link to each other with tie point so of 24.The gate terminal of transistor 24 and transistor 21 link to each other with 23 tie point se.Source electrode line S1, the S3 of the pixel of described tie point so and odd column, S5 ... link to each other.Source electrode line S2, the S4 of the pixel of described tie point se and even column, S6 ... link to each other.The transistor 21 of each differential amplifier 4a links to each other with terminal 4b with 22 tie point sp, is used to provide video data to read the first driving power SAp-ch of circuit part 4.The transistor 23 of each differential amplifier 4a links to each other with terminal 4c with 24 tie point sn, is used to provide video data to read the second driving power SAn-ch of circuit part 4.
When high voltage is offered with differential amplifier 4a in two source electrode line S linking to each other with se of tie point so (be source electrode line S (odd number) in the odd column and the source electrode line S (even number) in the even column, one of as described later), and when low-voltage offered another source electrode line, this differential amplifier 4a reduces the voltage of the source electrode line with low voltage and the voltage of the source electrode line that raising has high voltage according to the electric potential difference that occurs among two source electrode line S (odd number) in odd column and the even column and the S (even number), this differential amplifier 4a plays the effect of amplifying unit as crosslinked (cross-link) amplifier.In other words, this differential amplifier 4a has the function of the electric potential difference of amplifying the signal that is input to tie point so and se.
Among the differential amplifier 4a in Fig. 3, the tie point sp that links to each other with terminal 4b is used for output level is become the terminal of the timing signal of high signal (hereafter is done high) for input.The tie point sn that links to each other with terminal 4c is used for output level is become the terminal of the timing signal of low signal (hereafter is done low) for input.
In the course of the work, at first connect transistor 24 at the electromotive force of tie point se under than the slightly high situation of electromotive force of tie point so.Therefore, because this transistor 24 is connected, tie point so is reduced to the low earth potential of terminal 4c.Because tie point so is reduced to the low earth potential of terminal 4c, the transistor 21 with the gate terminal that links to each other with tie point so is switched on.Therefore, tie point se brings up to the high power voltage Vdd of terminal 4b.
Like this, differential amplifier 4a is used for improving the electromotive force that two adjacent source polar curves have the source electrode line of high potential, and reduces the electromotive force that has than the source electrode line of low potential.
According to present embodiment, for two adjacent source provide a differential amplifier 4a.This is because provide this differential amplifier 4a easily on component substrate 1, and extraneous noise (even existence) influence that two source electrode lines are had same degree.Alternatively, can provide a differential amplifier for the source electrode line of pixel not adjacent to each other.
According to present embodiment, in manufacturing step in making the component substrate process of this liquid crystal display, this component substrate is being bonded to relative substrate and before filling liquid crystal between two substrates, can estimate or detect the electrical characteristics of this component substrate self, this liquid crystal display is the active matrix display device with said structure.The fault that will detect at described electrical characteristics can comprise because the data of this each pixel of component substrate are preserved the low persistent fault (LOW fixing failure) that the electric leakage of electric capacity (additional capacitor Cs) causes, and owing to be used as the high persistent fault (HIGH fixing failure) that source electrode-drain leakage of the TFT of on-off element causes.
At first, before the detection to component substrate 1 in describing manufacture process, will describe by in conjunction with TFT substrate shown in Figure 1 and substrate and filling liquid crystal is made between two substrates the liquid crystal display operation of display image normally relatively.The pixel data signal that at first will comprise even number and odd column picture element signal is input to two the input terminal ine and the ino of image signal line 7.In response to array selecting signal, the transistor of pixel data signal by transmission gate portion 6 offered source electrode line S from X driver 5a.
The picture element signal that offers source electrode line S makes the sweep trace G from Y driver 5b become height and writes among the pixel 2a that selects thus.Therefore, the pixel data signal that will offer source electrode line S in selected sweep trace G offers respective pixel 2a as the pixel data signal that shows usefulness, and is kept in this pixel.Implement this operation by row, thereby on the display component array part 2 of liquid crystal display, can show the image of hope.
Pre-charge circuit part 3 is for being used for applying to each source electrode line S the circuit of pre-charge voltage Vpc before sweep trace G becomes height.Pre-charge voltage Vpc is offered the terminal 3a of pre-charge circuit part 3.Provide the timing of pre-charge voltage Vpc to depend on the voltage that offers the extreme 3b of precharge gate.
Therefore, when having realized that as this liquid crystal display of product or model machine image shows, the video data of this component substrate 1 reads circuit part 4 and does not work and be not used.
Then, will describe and detect step, after having made circuit part shown in Figure 1, the situation of this device substrate 1 be carried out this detection step by the semiconductor processes step.In the testing process to device substrate 1, this video data reads circuit part 4 work and is used.
At first, use description to realize the detection system of this detection method.Fig. 4 is the arrangement plan according to the detection system of present embodiment.This component substrate 1 connects by being connected cable 32 with testing apparatus 31.This testing apparatus 31 can write and reads pixel data.This connection cable 32 can be electrically connected to this testing apparatus 31 with the terminal 3a of the terminal 4b of the terminal ino of the data line 7 of component substrate 1 and the signal wire that ine, video data read circuit part 4 and 4c, pre-charge circuit part 3 and 3b etc.
Provide the voltage of scheduled volume from testing apparatus 31 to described terminal according to predetermined order, make it possible to the electrical characteristics of detecting element substrate 1, this predetermined order will be explained hereinafter.For the concrete condition of detection is described, below describe to detect whether have the above-mentioned low persistent fault and the step of high persistent fault.
Then, will the flow process of whole detection be described.Fig. 5 is the process flow diagram of expression testing process example.
Do not encourage video data to read the differential amplifier 4a of circuit part 4.More specifically, change the first driving power SAp-ch and the second driving power SAn-ch, make them have the intermediate electric potential (Vdd/2) of supply voltage Vdd and earth potential.In this case, input terminal ino and the ine from image signal line 7 imports predetermined pixel data signal, promptly write the described pixel as the unit (step (hereinafter being abbreviated as S) 1).
More particularly, high voltage and low-voltage are offered odd number source electrode line S (odd number) and even number source electrode line S (even number) respectively, thereby high voltage and low-voltage can be write the odd and even number pixel of select row respectively.Each row in all row is implemented this write step.Fig. 6 (a) is that expression writes low (L) of the pixel data in the pixel of 4 (OK) * 6 (row) matrixes and the chart of height (H) state.Shown in Fig. 6 (a), the matrix of the pixel data of this display component array part 2 has low (L) and high (H) of alternate column.
That then, utilizes that in running order video data reads that circuit part 4 reads each row writes pixel data (S2).The work that video data reads circuit part 4 will be described in the back.As described later, when this video data read circuit part 4 work, the precharge cycle during beginning was slightly long, made voltage to preserve the electric current leakage phenomenon in the electric capacity (Cs) and change definitely owing to data.In other words, this video data reads the output step that circuit part 4 enforcements are amplified and exported the signal of exporting on the signal wire, so that reads pixel data.
Then, this testing apparatus 31 compares (S3) with the pixel data that writes in the pixel data that reads in the read step and the write step.In comparison step, determine in each pixel, to write whether consistent with the pixel data that from each pixel, reads.
These testing apparatus 31 identifications write pixel data and the inconsistent unit of reads pixel data (being pixel), and output is to show the data (S4) such as the unit number of anomaly unit on the screen (not shown) of monitor.
The operation of reads pixel data among the S2 of Fig. 5 then, is described with reference to the sequential chart of Fig. 7.Fig. 7 is the sequential chart of read operation in the circuit in the key drawing 1.Whether normally implement pixel detection by determining inspected row with respect to reference column.In this case, this benchmark is classified even column as, and the inspected odd column of classifying as.Testing apparatus 31 generates timing signal shown in Figure 7, and this signal is offered described terminal.
At first, shown in Fig. 6 (a), the pixel of handling in the even column writes to carry out reference data, and will hang down with high voltage and write even pixel and inspected odd pixel respectively, thereby detects the pixel in the inspected odd column.
As shown in Figure 7, after above-mentioned intended pixel data were write all pixels, the pre-charge voltage PCG that will offer the terminal 3b of pre-charge circuit part 3 was become high voltage, thereby made source electrode line S precharge.Under pre-charge state,, begin read operation through after the schedule time.Change pre-charge potential (promptly will be applied to the voltage that pre-charge voltage the applies terminal 3a) Vpc of source electrode line S, make it have intermediate electric potential between the high and low voltage, and CsCOM electromotive force shown in Figure 2 is become (low potential-Δ V).The CsCOM electromotive force is become (low potential-Δ V), so that make the described electromotive force that reads become and be lower than reference potential.This is because when data preservation capacitor C s had leak current fault, the CsCOM electromotive force that is subjected to the electric capacity of effect of leakage was (low potential-Δ V).Therefore, limiting slightly long precharge cycle when beginning makes voltage owing to leak current fault changes.
Read first the row operation in, at first precharge gate voltage PCG is become low, thereby stop precharge.Then, the electromotive force of sweep trace G1 is become height, and connect the TFT11 of the first row place as pixel transistor.Connect the TFT11 of all pixels that link to each other with sweep trace G1 simultaneously.Therefore, the electromotive force that writes capacitor C s moves on to source electrode line S.The odd number source electrode line (S (odd number)) that wherein writes high potential has the more high potential of bringing up to slightly near intermediate electric potential, and benchmark even number source electrode line (S (even number)) has the more low potential that is reduced to slightly near intermediate electric potential.The SAn-ch driving power is become low, and then the SAp-ch driving power is become height, read circuit part 4 thereby can start this video data.
Yet when the data preservation capacitor C s of odd pixel had electric leakage, the electromotive force of odd number source electrode line (S (odd number)) became the electromotive force that is lower than even number source electrode line (S (even number)), shown in dotted line L1 among Fig. 7.Therefore, the electromotive force of even number source electrode line improves shown in dotted line L2.
The low feasible described electromotive force a little less than intermediate electric potential of SAn-ch driving power becomes low potential, and the height of SAp-ch driving power makes the electromotive force a little more than intermediate electric potential become high potential then.This be because, as mentioned above, two high and low potential level that the operation that video data reads the differential amplifier 4a of circuit part 4 can be distinguished one from the other and be occurred among two source electrode line S.All pixels that link to each other with sweep trace G1 are implemented this operation simultaneously.
Then, the transistorized door TG1 that sequentially opens transmission gate portion 6 is to TGn (promptly becoming high potential), and reads the pixel data of the first capable pixel in order from image signal line 7.
After opening last transmission gate TGn, start precharge operation once more.That is to say that in this precharge operation, the second time and precharge time subsequently needn't be the same with the precharge time first time long.
Therefore, as mentioned above, pixel data that relatively writes and the pixel data that reads (S3).Have low potential if should have the inspected odd pixel that is written into of high potential, can determine that then this odd pixel has low persistent fault.The pixel that will have low persistent fault, promptly anomaly unit outputs to for example display device (not shown) (S4) from testing apparatus 31.
After precharge operation stops, the electromotive force of the second sweep trace G2 become have high potential, and connect the TFT 11 of the pixel of second row.To carrying out same operation, that is to say the pixel data that reads up to each pixel of the capable pixel of m up to each pixel of the pixel that links to each other with last sweep trace Gm.
Pixel data that relatively reads and the pixel data that writes, thus can check whether each pixel in the inspected odd column has low persistent fault.
Then, make the relation counter-rotating between even column and the odd column, promptly in odd pixel and inspected even pixel, write low potential and high potential signal respectively.Implement processing same as shown in Figure 5, thereby can check whether even pixel has low persistent fault with respect to the odd pixel of benchmark.
As mentioned above, the odd and even number row are all detected, whether have low persistent fault with respect to the pixel in another row, whether have low persistent fault thereby can detect each pixel to check the pixel in one of odd and even number row.
Then, describe whether there being the detection of high persistent fault with reference to Fig. 8.Fig. 8 explains to detect the sequential chart that whether has the read operation in the high persistent fault process.
Be similar to detection, at first in even pixel, write reference data low persistent fault.Yet, in writing the pixel data process, in even pixel and inspected odd pixel, write high and low potential signal respectively.
After pixel data that will be shown in Fig. 6 (b) (that is, having the pixel data of the inverse relation between the H and L among Fig. 6 (a)) writes all pixels, under pre-charge state, begin read operation through after the schedule time.This moment, pre-charge potential (will be applied to the voltage that pre-charge voltage the applies terminal 3a) Vpc with source electrode line S became (high potential+Δ V).With the electromotive force of (high potential+Δ V) as pre-charge potential Vpc be for have than reference potential high read electromotive force, this is because when appearance between the source electrode of TFT11 and the drain electrode was leaked electricity, the electromotive force of the source electrode line S of the pixel that stands to leak electricity was (high potential+Δ V).
In read operation, at first stop precharge, then the electromotive force with sweep trace G1 becomes high to disconnect this TFT11.The TFT11 of all pixels that will link to each other with sweep trace G1 connects simultaneously.Change the electromotive force of the benchmark even number source electrode line S (even number) that writes high potential, make it have the electromotive force more lower slightly (promptly becoming high potential) than pre-charge potential Vpc, change the electromotive force of the odd number source electrode line S (odd number) that writes low potential simultaneously, make it have much lower electromotive force than pre-charge potential Vpc.Therefore, differential amplifier 4a has reduced the electromotive force of the odd number source electrode line S (odd number) that writes low potential, and maintenance writes the high potential of the even number source electrode line S (even number) of high potential.
Yet when electric leakage occurring between the source electrode of the TFT11 of inspected odd pixel and the drain electrode, the electromotive force of the capacitor C s of the pixel that stands to leak electricity is (high potential+Δ V), and it is higher than the electromotive force of benchmark even pixel.Therefore, in the reads pixel data process, the electromotive force of odd number source electrode line S (odd number) remains on pre-charge potential (high potential+Δ V), and can not change like that shown in Fig. 8 dotted line L3 very bigly.In other words, the electromotive force of odd number source electrode line S (odd number) is higher than the electromotive force of even number source electrode line S (even number).Make the SAn-ch driving power become that low to make that lower electromotive force becomes low, make higher electromotive force become height and make the SAp-ch driving power become height subsequently.Therefore, shown in dotted line L4, it is low that the electromotive force of even number source electrode line S (even number) is become, and make the electromotive force of odd number source electrode line S (odd number) become height.
Because in being examined pixel cell to write pixel data different with reads pixel data, so can detect unusual unit.
Differential amplifier operation subsequently is identical with the operation that is used to detect low persistent fault.By to as the odd pixel of benchmark and this moment inspected even pixel carry out aforesaid operations, can detect the high persistent fault of all pixels.
As mentioned above, hang down persistent fault by dual numbers and odd column detects (when detecting at every turn, between even number and odd column, switch benchmark), and dual numbers and odd column carry out high persistent fault and detect (when each the detection, between even number and odd column, switch benchmark), can detect all pixels and whether have low persistent fault and high persistent fault.
Although in benchmark pixel, to write high or low electromotive force in order detecting in this example, the intermediate electric potential signal can be write in the benchmark pixel.
With reference to Fig. 9, the intermediate electric potential of describing high potential and low potential is write the method to detect in the benchmark pixel.
Be similar to detection, at first reference data write in the even pixel, and when writing high potential or low potential in the inspected odd pixel, the intermediate electric potential of high potential and low potential is write in the even pixel low persistent fault.For example, as shown in figure 10, at first high potential is write in the odd pixel, and the intermediate electric potential (M) of high potential and low potential is write in the even pixel.
After writing all pixels, under pre-charge state, after the process schedule time, begin read operation.The pre-charge potential (being applied to the voltage that pre-charge voltage applies terminal 3a) of source electrode line S is become the intermediate electric potential of high potential and low potential herein.
In read operation, at first stop precharge, then the electromotive force with sweep trace G1 becomes height, and this electromotive force is connected TFT 11.Connected simultaneously with the TFT11 in all pixels that sweep trace G1 links to each other.The electromotive force of benchmark even number source electrode line remains on the intermediate electric potential of pre-charge potential, and can not change.Owing in odd number source electrode line S, write high potential, omit height than intermediate electric potential so its electromotive force becomes.Therefore, it is low and high that differential amplifier 4a makes even number side and odd side become respectively, this means that the pixel data that writes odd side keeps high.
Yet when electric leakage occurring among the capacitor C s that is examined pixel, the electromotive force of odd number source electrode line S (odd number) becomes and is slightly less than intermediate electric potential.Therefore, shown in the dotted line L5 among Fig. 9, differential amplifier 4a becomes odd side low, and shown in dotted line L6, the even number side is become height, and the pixel data that this expression writes odd side becomes low rather than high.
Operation when operation is subsequently hanged down persistent fault with detection is identical.Subsequently, according to same way as from all the row reads pixel data.
Then, low potential is write odd side (referring to the state that produces owing to the variation from H to L among Figure 10), and intermediate electric potential is write benchmark even number side.Subsequently all pixels are implemented and the operation identical operations that high potential is write odd side and reads pixel data.
Therefore, testing apparatus 31 can obtain in both cases to be examined in the pixel and data that reads pixel data produces owing to high potential and low potential are write.Compare pixel data that writes under the both of these case and the pixel data that reads with high potential and low potential.In this case, from pixel, read low potential at every turn, can think at first that then the capacitor C s of this pixel has leak current fault under the both of these case low potential and high potential being write in the pixel.
The high impedance of described electric capacity or TFT or source electrode-drain leakage of TFT make inspected source electrode line electromotive force become pre-charge potential, that is to say, have caused the comparison to pre-charge potential, rather than have read and amplifieroperation.For this reason, can determine that an inspected side always tends to low potential, this is because this circuit intrinsic characteristic decision.
The high potential that reads has in both cases only been eliminated capacitor C s and the possibility of leak current fault occurred, and can still show the likelihood of failure identical with low potential.In other words, by intermediate electric potential being write reference side and low potential and high potential being write inspected opposite side (wherein can at first write low or high), reads pixel data and they are compared in both cases, capacitor C s that can detecting unit or the fault of TFT.
Then, by then the odd column of handling as reference side being carried out identical detection with the even column of handling as inspected opposite side, can detect the fault that exists among the capacitor C s of all pixels or the TFT.
As mentioned above, utilize the operation shown in Fig. 9, the data stationary that will have high potential and low potential when reading is low potential or high potential, can determine that capacitor C s or TFT have some faults.
Figure 11 is the circuit diagram of variation instance of the circuit of expression device substrate shown in Figure 1.In Fig. 1, between source electrode line S that exports from pre-charge circuit part 3 and transmission gate portion 7, provide the video data of device substrate 1A to read circuit part 4.In Figure 11, by connection door section 9 video data is read circuit part 4 and link to each other with the source electrode line S that exports from pre-charge circuit part 3.
In structure shown in Figure 11, by signal wire 9c with the gate terminal of the transistor 9a of transmission gate portion 9 be connected gate terminal 9b and link to each other.Generally speaking, about connecting the electromotive force of gate terminal 9b, because the gate terminal of transistor 9d is high, so signal wire 9c is low, and video data reads circuit part 4 and source electrode line isolation.Therefore, advantageously in the structure of Figure 11, when it is under the unused state, video data reads circuit part 44 is isolated fully, thereby makes the unstable mode of operation of differential amplifier 4a to exert an influence to it.
In read operation, thereby signal wire 9c is become height, can handle this demonstration and read circuit part 4 by the electromotive force of control linkage gate terminal 9b.
This image signal line 7 comprises differential amplifier 10, and it comprises the current mirror amplifier.This be for the difference that prevents high and low signal owing to the capacitive component that for example image signal line 7 itself has reduces.Therefore, can divide aloof from politics and material pursuits to a greater degree and low signal, and can export this output signal outo and oute fast with high precision.
Although all pixels for display component array part provide video data to read circuit part in the present embodiment, can provide described video data to read circuit part for the one part of pixel that is used as the display part, rather than provide for all pixels.
As mentioned above, according to embodiments of the invention and variation instance, can be in the fault of detecting element substrate after the device substrate step of having finished product or sample.Therefore, can shorten the low yield time, can reduce the assembling of ropy product like this, thereby can reduce cost.Especially, can reduce the research and development time and the R﹠D costs of sample.
In addition, because can detection failure, so easier to the so-called maintenance of device substrate in the device substrate stage.
In addition, can change the electric charge (it is analog information) that fills in the electric capacity into numerical information (voltage logic) because utilize video data to read circuit part, so the detection sensitivity height in the testing process.
In addition,, thereby be difficult to be subjected to the external noise influence, the differential amplifier that links to each other with non-conterminous source electrode line can be provided although differential amplifier links to each other with adjacent source electrode line in this example.Therefore, can eliminate the influence that the electric leakage possibility between the adjacent source polar curve causes.
Second embodiment
Then, the second embodiment of the present invention is described.Figure 12 is the circuit diagram according to the device substrate of the liquid crystal display of second embodiment of the invention.In Figure 12, identical Reference numeral is represented the parts identical with first embodiment, and has omitted the explanation to them.
Device substrate 1B according to the liquid crystal display of present embodiment comprises that also display component array part 2, video data read circuit part 4, X driver portion 5a, Y driver portion 5b (not shown among Figure 12), transmission gate portion 6, image signal line 7 and differential amplifier 10.According to present embodiment, device substrate 1B comprises that also pre-charge circuit part 13, connection door section 14 and reference voltage provide part 15.
The pre-charge circuit part 13 of second embodiment has and is arranged in each row, promptly is arranged in the transistor 13b of each source electrode line.The source electrode of each transistor 13b links to each other with the tie point se of each differential amplifier 4a by source electrode line S with drain electrode, provides line REF to link to each other with tie point so of differential amplifier 4a by reference voltage.The grid of each transistor 13b links to each other to be used for precharge with gate terminal 13a.
In connecting door section 14, as shown in figure 12, tie point so of each differential amplifier 4a links to each other with the terminal 15a that reference voltage provides line REF and reference voltage that part 15 is provided by a transistor 14b who connects door section 14.Reference voltage V ref is offered terminal 15a.Another tie point se of each differential amplifier 4a links to each other with source electrode line S by another transistor 14c that connects door section 14.The grid of transistor 14b and 14c be used for the gate terminal 14a that test circuit is connected and link to each other.Test circuit is connected signal TE offer gate terminal 14a, this circuit connects signal TE and will be explained hereinafter.
To be used for precharge transistor 13b provides line REF to link to each other with reference voltage, and the terminal 15a that this reference voltage provides line REF and reference voltage that part 15 is provided links to each other.Therefore, the gate voltage of oxide-semiconductor control transistors 13b, thus can connect this transistor 13b, and reference voltage V ref can be applied to source electrode line S by this transistor 13b.
The operation of the reads pixel data among the S2 among Fig. 5 then, is described with reference to the sequential chart of Figure 13.Figure 13 is the sequential chart of the read operation of the circuit of explanation in Figure 12.Whether normally realize detection by determining every row to pixel.Utilize testing apparatus 31 to generate timing signal shown in Figure 13, and this signal is offered described terminal.
At first, connect all sweep trace G of element arrays part 2, and high potential is write in all pixels.Although in order to describe, in this case high potential is write each pixel, also can write low potential.Although hereinafter will describe high potential is write all pixels to detect the example of substrate 1B, can detect partial pixel.After writing, disconnect the grid of sweep trace G.
As shown in figure 13, after writing predetermined pixel data (being high potential) in all pixels herein, the precharge gate pole tension PCG that offers the terminal 13a of pre-charge circuit part 13 is become height, so that guarantee data holding time t1, and in the preset time section, keep transistor 13b to connect.In addition, the test circuit that will be used for the gate terminal 14a that test circuit connects connects signal TE and becomes height.Through after the data holding time t1, begin reads pixel data.
Gate lines G keeps disconnecting, and needn't be in pre-charge state always, and this is because the interior transistor 13b of section keeps connecting at the fixed time, makes reference voltage V ref can both occur in source electrode line S and reference side signal wire REF.When connecting transistor 13b, the test circuit that is used for the gate terminal 14a of test circuit connection connects signal TE and needn't be height.Therefore, through after the data holding time t1,, thereby carry out precharge if precharge gate pole tension PCG is for low then it is become height.
The reference voltage V ref that will be in high and low intermediate electric potential provides part 15 to be applied to terminal 15a as pre-charge potential from reference voltage.Therefore, after writing the intended pixel data, source electrode line S and tie point se and tie point so have described intermediate electric potential.
Then, through after the data holding time t1, precharge gate pole tension PCG is become low, with the cancellation pre-charge state.In this case, test circuit is connected signal TE remain height, and the electromotive force of the first driving power SAp-ch and the second driving power SAn-ch is remained described intermediate electric potential, thereby can stop this differential amplifier 4a work.
Note, precharge gate pole tension PCG is become low after, before differential amplifier 4a starts working, stop to provide the precharge gate pole tension to terminal 15a.
When being become, precharge gate pole tension PCG connects gate lines G 1 at once after low, simultaneously pixel data output from linking to each other with gate lines G 1.More particularly, the electric charge that will write and be kept at simultaneously among each capacitor C s moves to each source electrode line S.As shown in figure 13, the electromotive force of source electrode line S improves slightly.If it is low that the electric leakage of capacitor C s becomes the data of each pixel, the electromotive force of source electrode line S is shown in dotted line to be reduced slightly.
In order to handle this differential amplifier 4a after through the schedule time after disconnecting gate lines G 1, at first the electromotive force with the second driving power SAn-ch becomes low from middle electromotive force.Simultaneously or near the electromotive force of the described second driving power SAn-ch becomes the low moment, test circuit is connected signal TE to be become low, and the transistor 14b and the 14c that will connect door section 14 in preset time section t2 keep disconnecting, thereby define the information about the source electrode line electromotive force that improves slightly in differential amplifier 4a.
With the SAn-ch driving power become low electromotive force a little less than intermediate electric potential will be become low.Therefore, each differential amplifier 4a compares reference voltage V ref with the voltage of corresponding source electrode line S, and this reference voltage V ref is the intermediate electric potential that provides from the outside.If pixel is normal, then the electromotive force of source electrode line S is a little more than intermediate electric potential.Therefore, tie point so of each differential amplifier 4a has the electromotive force lower than tie point se.Therefore, as shown in figure 13, electromotive force of tie point so reduces.Herein, the electromotive force of tie point se is kept intact.
Then, the SAp-ch driving power is become the p channel transistor 21 and 22 that each differential amplifier 4a has been handled in the higher position.In other words, the SAp-ch driving power is become the higher position and will become height a little more than the described electromotive force of intermediate electric potential.If described pixel is normal, then the electromotive force of source electrode line S is a little more than intermediate electric potential.Therefore, the tie point se of differential amplifier 4a has the electromotive force higher than tie point so.Therefore, as shown in figure 13, the electromotive force of tie point se increases.
If there is fault in described pixel, if for example the electric leakage of capacitor C s that data in each pixel are become is low, as shown in phantom in Figure 13, the electromotive force of source electrode line S reduces slightly.In this case, when the SAn-ch driving power becomes when low, the electromotive force of tie point se reduces as shown in phantom in Figure 13.In addition, when the SAp-ch driving power becomes when high, electromotive force of tie point so improves as shown in phantom in Figure 13.
In this case, disconnect because test circuit connects signal TE, therefore can work fast under the capacitive effect without any source electrode line S, this electric capacity is load.In addition, because reference voltage V ref does not have the electromotive force in the pixel of writing, so the fault that detects a pixel is as the fault in this pixel.In other words, because can be confirmed to be fault in a pixel, so can at length classify to fault signature.
When the logic with the tie point se of differential amplifier 4a and tie point so is fixed as when one of high and low, test circuit is connected signal TE become height, and described fixed logic data are write source electrode line S once more.
Because the electromotive force of each pixel that will link to each other with gate lines G 1 reads each corresponding source electrode line S, so the transistorized door TG1 that opens transmission gate portion 6 is to TGn (promptly becoming height).Then, read the pixel data of each pixel of first row in order from image signal line 7, and it is outputed to lead-out terminal outo and oute.
After the data that read all pixels that link to each other with gate lines G 1, it is low that gate lines G 1 is become, and change SAn-ch driving power and SAp-ch driving power, makes it have described intermediate electric potential to stop the operation of differential amplifier 4a.Then, PCG becomes height with the precharge gate pole tension, and makes all source electrode line S precharge.
Subsequently, all gate lines G 2 to Gm are repeated this operation, thereby can sequentially detect the pixel on the substrate.
The low potential data are write in all pixels, and it is carried out identical detection by the high potential data being write after detecting operation that all pixels implement finishes aforesaid, finished all detections thus.Therefore, detection time is shorter than the detection time of first embodiment, and this is because all pixels are only needed to carry out twice detection.
As mentioned above, different according to present embodiment with first embodiment, can detect the pixel that needs detection at situation about wherein breaking down.
Variation instance
The variation instance of second embodiment then, is described.Figure 14 has represented the device substrate 1B ' according to the variation instance of second embodiment.In Figure 14, identical Reference numeral represent with Figure 12 in identical parts, and omitted explanation to it.
The pre-charge circuit part 13 of second embodiment have be in every row, be transistor 13b and the 13c in each source electrode line.The drain electrode of each transistor 13b provides the terminal 15a of part 15 to link to each other with the tie point se of differential amplifier 4a with reference voltage with source electrode.In addition, each transistorized source electrode provides the terminal 15a of part 15 and tie point so of differential amplifier 4a to link to each other with drain electrode and reference voltage.Reference voltage V ref is offered terminal 15a.The grid of each transistor 13b and 13c be used for precharge gate terminal 13a and link to each other.
In connecting door section 14, the tie point se of each differential amplifier 4a links to each other with each corresponding source electrode line S by the transistor 14c that connects door section 14.The grid of each transistor 14c links to each other with gate terminal 14a and is connected to be used for test circuit.Test circuit is connected signal TE offer gate terminal 14a, this test circuit connects signal TE and will be explained hereinafter.
To be used for precharge transistor 13b provides line REF to link to each other with 13c with reference voltage, and the terminal 15a that this reference voltage provides line and reference voltage that part 15 is provided links to each other.Therefore, the grid voltage of oxide- semiconductor control transistors 13b and 13c, thus can connect this transistor 13b and 13c.In addition, control is connected the grid voltage of the continuous transistor 14c of gate terminal 14a with test circuit, thereby can connect transistor 14c.Therefore, reference voltage V ref can be applied to tie point se and the so of source electrode line S and differential amplifier 4a by transistor 13b, 13c and 14c.
Under this structure, to pull 1B different with the element base among Figure 12, the precharge gate pole tension is provided or stops the switch of this precharge gate pole tension precharge gate pole tension PCG being become do not need after low to be used to control to terminal 15a.
And in this variation instance, implement operation according to sequential chart shown in Figure 13.The difference of embodiment only is the work of transistor 13b, 13c and 14c among this variation instance and Figure 12.
In other words, after intended pixel data (herein for high) are write all pixels, the precharge gate pole tension PCG that will offer the terminal 13a of pre-charge circuit part 13 is become height, guaranteeing data holding time t1, and connect transistor 13b and 13c and keep within the predetermined time connecting.In addition, the test circuit that will be used for the gate terminal 14a that test circuit connects connects signal TE and becomes height.Through after the data holding time t1, begin reads pixel data.
Note, although being connected signal TE with the test circuit that is used for the gate terminal that test circuit is connected, transistor 13b and 13c become height, but gate lines G can be remained disconnection, and needn't be pre-charge state always, make benchmark Vref to occur among the tie point se of source electrode line S and differential amplifier 4a and the so.Therefore,,, then it is become height if precharge gate pole tension PCG is low through after the data holding time t1, and if test circuit to connect signal TE be low, then it is become height, thereby carries out precharge.
In order to handle this differential amplifier 4a after through the schedule time after opening gate lines G 1, at first the electromotive force with the second driving power SAn-ch becomes low from middle electromotive force.Simultaneously or in moment of the change of the electromotive force that approaches the second driving power SAn-ch, test circuit is connected signal TE to be become low, and disconnect the transistor 14c that connects door section 14, and in preset time t2, keep off-state, thereby in differential amplifier 4a, define information about the source electrode line electromotive force that improves slightly.
Other operations are identical with the operation of embodiment among Figure 12.
The 3rd embodiment
Then, the third embodiment of the present invention is described.Figure 15 is the circuit diagram according to the device substrate of the liquid crystal display of third embodiment of the invention.In Figure 15, identical Reference numeral is represented the parts identical with first embodiment, and has omitted the explanation to it.
Device substrate 1C according to the liquid crystal display of present embodiment comprises that also display component array part 2, video data read circuit part 4, X driver portion 5a, Y driver portion 5b (not shown among Figure 15), transmission gate portion 6, image signal line 7 and differential amplifier 10.According to present embodiment, device substrate 1C comprises that also pre-charge circuit part 16, connection door section 17 and reference voltage provide part 18.
The pre-charge circuit part 16 of the 3rd embodiment has pair of transistor 16b and the 16c that is arranged in the pair of source polar curve, and described pair of source polar curve is the source electrode line S (even number) in source electrode line S (odd number) and the even column in the odd column.The source electrode of each transistor 16b and 16c links to each other with se with tie point so of each differential amplifier 4a with even number source electrode line S (even number) by odd number source electrode line S (odd number) with drain electrode, wherein this transistorized source electrode and drain electrode series connection.The grid of each transistor 16b and 16c be used for precharge gate terminal 16a and link to each other.The tie point of transistor 16b and 16c provides the terminal 18a of part 18 to link to each other with reference voltage.Reference voltage V ref is offered this terminal 18a.Therefore, the grid voltage of oxide-semiconductor control transistors 16b and 16c, thus can connect this transistor 16b and 16c.Therefore, the reference voltage V ref that provides from device substrate 1C outside can be applied to source electrode line by transistor 16b and 16c.Note, can in device substrate 1C, generate reference voltage V ref.This reference voltage V ref is the voltage that is in the intermediate electric potential between high potential and the low potential.
In connecting door section 17, as shown in figure 15, tie point so of each differential amplifier 4a links to each other with odd number source electrode line S (odd number) by a transistor 17b who connects door section 17.Another tie point se of each differential amplifier 4a links to each other with even number source electrode line S (even number) by another transistor 17c that connects door section 17.The grid of transistor 17b and 17c be used for gate terminal 17a1 that the odd number test circuit is connected and be used for the gate terminal 17a2 that the even number test circuit is connected and link to each other.Test circuit is connected signal TEo and Tee offers gate terminal 17a1 and 17a2, this test circuit connects signal TEo and Tee will be explained hereinafter.
Therefore, if any one among test circuit connection signal TEo and the TEe becomes height, then utilize a differential amplifier 4a only can read the data of a pixel among odd number source electrode line S (odd number) and the even number source electrode line S (even number).Then, will occur among the source electrode line S and send to differential amplifier 4a by any one transistor transistor 17b and the 17c from the electromotive force (potential change slightly) that this source electrode line reads.After in a single day the transistor of connecting and open closes, in differential amplifier 4a, amplify described electromotive force.Then, open the described transistor of once closing once more, and this transistor is written in source electrode line, by image signal line 7 these electromotive forces of output.
The operation of circuit shown in Figure 15 then, is described with reference to the sequential chart among Figure 16.The operation of reads pixel data in step S2 among Fig. 5 is described.Figure 16 is the sequential chart of the read operation of circuit among explanation Figure 15.By determining every row, determine respectively promptly whether odd column and even column be normal, and pixel is detected.Testing apparatus 31 generates timing signal shown in Figure 16, and this timing signal is provided for described terminal.
At first, connect all sweep trace G of element arrays part 2, and high potential is write in all pixels in the odd column.Note, high potential can be write in all pixels.In the present embodiment, respectively the pixel among pixel among the odd number source electrode line S (odd number) and the even number source electrode line S (even number) is detected.Although in this case high potential to be write in each pixel in order illustrating, also low potential can be write in each pixel.Although hereinafter describe high potential is write in all pixels in the odd column to detect the example of substrate 1C, can detect partial pixel.After writing, disconnect the grid of sweep trace G.Test circuit is connected the influence that signal TEe becomes low potential just prevented that electromotive force is transferred to even number source electrode line S (even number) by differential amplifier 4a from display component array part 2.
As shown in figure 16, after writing intended pixel data (being high potential) in the pixel in the odd column herein, the precharge gate pole tension PCG that will offer the terminal 16a of pre-charge circuit part 16 is become height, to guarantee data holding time t1, and connect transistor 16b and 16c, and keep within the predetermined time connecting.In addition, the test circuit that also will be used for the gate terminal 17a1 that test circuit connects connects signal TEo and becomes height.Through after the data holding time t1, begin reads pixel data.
Gate lines G keep to be disconnected and needn't always have pre-charge state, this is owing to make transistor 16b and 16c remain connection within the predetermined time, thereby reference voltage V ref can occur in two the tie point so of differential amplifier 4a and se.When connecting transistor 16b and 16c, the test circuit that is used for the gate terminal 17a1 of test circuit connection connects signal TEo and needn't be height.Therefore, through after the data holding time t1, if precharge gate pole tension PCG is low, then it is become height, to carry out precharge.
The reference voltage V ref that will be in high and low intermediate electric potential provides part 18 to be applied to terminal 18a as pre-charge potential from reference voltage.Therefore, after writing the intended pixel data, source electrode line S (odd number) and tie point se and tie point so have intermediate electric potential.
Then, through after the data holding time t1, precharge gate pole tension PCG is become low, to eliminate pre-charge state.In this case, test circuit is connected signal TEo keep high, and the electromotive force of the first driving power SAp-ch and the second driving power SAn-ch is remained intermediate electric potential, thereby can stop this differential amplifier 4a work.
When precharge gate pole tension PCG being become when connecting gate lines G 1 at once after low, the pixel data output from linking to each other simultaneously with gate lines G 1.More particularly, make the electric charge that writes and be kept among the capacitor C s move to separately source electrode line S (odd number) simultaneously.As shown in figure 16, the electromotive force of source electrode line S (odd number) increases slightly.If it is low that the electric leakage among the capacitor C s becomes the data of each pixel, then the electromotive force of source electrode line S (odd number) is shown in dotted line reduces slightly.In this case, be low because test circuit connects signal TEe, so the electromotive force of even number source electrode line S (even number) is insignificant.
In order to handle this differential amplifier 4a after through preset time after opening gate lines G 1, at first the electromotive force with the second driving power SAn-ch becomes low from middle electromotive force.Become the low moment simultaneously or at the electromotive force that approaches the second driving power SAn-ch, test circuit is connected signal TEo to be become low, and disconnect the transistor 17b that connects door section 17, thereby in differential amplifier 4a, define information about odd number source electrode line S (odd number) electromotive force that improves slightly.
The SAn-ch driving power become low just make that lower slightly electromotive force becomes low among tie point so and the se.Therefore, each differential amplifier 4a will compare as the reference voltage V ref of the intermediate electric potential that applies from the outside and the voltage of corresponding odd number source electrode line S.If this pixel is normal, then the electromotive force of odd number source electrode line S (odd number) is slightly larger than intermediate electric potential.Therefore, the tie point se of each differential amplifier 4a has the electromotive force lower than tie point so.Therefore, as shown in figure 16, the electromotive force of tie point se reduces.At this moment, electromotive force of tie point so is kept intact.
Then, thus the SAp-ch driving power is become the p channel transistor 21 and 22 that height is handled each differential amplifier 4a.In other words, the SAp-ch driving power is become the higher position electromotive force slightly high between tie point so and the se is become height.If this pixel is normal, then the electromotive force of odd number source electrode line S (odd number) is a little more than intermediate electric potential.Therefore, tie point so of differential amplifier 4a has the electromotive force higher than tie point se.Therefore, as shown in figure 16, electromotive force of tie point so improves.
If pixel is of poor quality, low if the electric leakage for example among the capacitor C s becomes data in each pixel, then the electromotive force of odd number source electrode line S (odd number) reduces slightly as shown in phantom in Figure 16.In this case, when the SAn-ch driving power being become when low, as shown in phantom in Figure 16, the electromotive force of tie point se reduces.In addition, when the SAp-ch driving power being become when high, as shown in phantom in Figure 16, electromotive force of tie point so increases.
In this case, because test circuit connects signal TEo and TEe disconnects, so can under the situation of any influence of the electric capacity that does not have source electrode line S (it is load), operate fast.In addition, because reference voltage V ref does not have the electromotive force that writes in described pixel, so can detect a fault in the pixel as the fault in this pixel.In other words, because can confirm a defective in the pixel, can at length classify to fault characteristic.
When logic of the tie point se that makes differential amplifier 4a and tie point so is fixed as one of high potential and low potential, test circuit is connected signal TEo become height, and described fixed logic data are write among the odd number source electrode line S (odd number) once more.Because the electromotive force of each pixel that will link to each other with gate lines G 1 reads each corresponding odd number source electrode line S (odd number), so open transistorized odd gates TG1, TG3, the TG5 TGn (perhaps TGn-1) (be about to these grids and become height) to the end of transmission gate portion 6.Then, read the pixel data of the pixel that is in first row in order from image signal line 7, and it is outputed to lead-out terminal outo and oute.
After the data that read all pixels that link to each other with gate lines G 1, gate lines G 1 is become low, and change SAn-ch driving power and SAp-ch driving power, make it have intermediate electric potential to stop the operation of differential amplifier 4a.Then, PCG becomes height with the precharge gate pole tension, and makes all source electrode line S precharge.
Subsequently, all gate lines G 2 to Gm are repeated this operation, thereby can sequentially detect each gate line.
Be through with aforesaidly, the low potential data write in all pixels in the odd column, and it is carried out identical detection, finishing all detections thus by after the high potential data being write the detecting operation that all pixels implement.
Then, the pixel in the antithesis ordered series of numbers detects.In other words, the test circuit that utilization is fixed to low potential connects signal TEo, and utilize the test circuit that changes to connect signal TEe, the high potential data being write the pixel in the even column and the low potential data being write under the situation of the pixel in the even column, carry out and the identical detection that the pixel in the odd column is carried out.
Although a differential amplifier 4a is used for a source electrode line according to the second embodiment needs, but according to the 3rd embodiment for two source electrode lines differential amplifier 4a of needs only, this can reduce the quantity of differential amplifier 4a on the substrate, therefore can improve each transistorized size in the differential amplifier 4a.Because transistorized degree of asymmetry reduces in the differential amplifier 4a, so can improve driving power, minimizing performance change etc., this differential amplifier 4a can have stability and high sensitive.Figure 17 is the circuit diagram of the improved form of the connection door section 17 among expression Figure 15.Connect in the door section 17 at this, as shown in figure 15, tie point so of each differential amplifier 4a links to each other with odd number source electrode line S (odd number) by a transistor 17b who connects door section 17.Another tie point se of each differential amplifier 4a links to each other with even number source electrode line S (even number) by another transistor 17c that connects door section 17.In Figure 17, the grid of transistor 17b be used for the door that test circuit is connected and select (gate select) terminal 17a11 to link to each other, link to each other with the grid of transistor 17c by transistor 17d simultaneously, this transistor 17d have with phase inverter with enable the grid that (gate-enable) terminal 17a21 links to each other.Test circuit is connected door select a signal TGS (test gate selections) to offer to select a terminal 17a11, and test circuit is connected signal TE (test enable) offer and enable terminal 17a21.
Therefore, door is enabled terminal 17a21 become the higher position and connected among transistor 17b and the 17c one, make a differential amplifier 4a only can read the data of a pixel among odd number source electrode line S (odd number) and the even number source electrode line S (even number).
When test circuit connects door to select a signal TGS is high, switch on and off transistor 17b and 17c respectively, make it possible to read the data of the pixel among the odd number source electrode line S (odd number).On the other hand, select a signal TGS when low, switch on and off transistor 17c and 17b respectively, make it possible to read the data of the pixel among the even number source electrode line S (even number) when test circuit connects door.Apply voltage signal when not selecting terminal 17a11 and door to enable terminal 17a21 to door, when promptly being in floating state, transistor 17b and 17c are disconnection, isolate this test circuit thus.
Provide phase inverter can prevent that odd number source electrode line S (odd number) links to each other with differential amplifier 4a with even number source electrode line S (even number) simultaneously between the grid of transistor 17b and 17c, this can further prevent maloperation in advance.
As mentioned above, be used as two faults in the pixel although detect a fault in the pixel according to first embodiment, according to the second and the 3rd embodiment, can be with the fault in the detected pixel as the fault in the pixel.Therefore, under circuit structure, can in more detail fault characteristic be classified according to the circuit structure of first embodiment by beguine according to the second and the 3rd embodiment.
According to the second and the 3rd embodiment, can under the influence of the electric capacity that does not have source electrode line S (as load), operate fast, utilize test circuit to connect signal TEo and TEe like this and reduced load in the differential amplifier course of work.
In addition, according to the second and the 3rd embodiment, because apply this reference voltage, so can be from this reference voltage of external control from the outside.Therefore, can be used for the detection of detailed assessment, for example electromotive force is preserved in search.
In three embodiment, active array type display apparatus substrate as electro-optic device substrate example of the present invention has been described, but the invention is not restricted to these embodiment, but can under the situation of scope that does not deviate from structure of the present invention or spirit, carry out various variations, modification etc.
For example, the present invention can also be used for having input function, its pixel has the display apparatus substrate of optical sensor.In this case, can be with the amplifier of this differential amplifier 4a as output signal.
The present invention can also be used for having in pixel the display apparatus substrate of memory element (for example SRAM and FERAM).In this case, can utilize and read circuit part 4 and detect these memory elements.
The objective of the invention is to improve the precision that reads to the electromotive force (detection signal) that offers pixel.Read the viewpoint of the precision of signal for improvement, the present invention also is used for the purposes except that pixel detection.
For example, in the purposes of the driving that is used for image display, the present invention can be used in black precharge and/or the insertion that shows.
For example, circuit according to a second embodiment of the present invention can be used for this purpose.
Be used for making the driving method of the polarities of potentials of picture signal with respect to the reversal of poles of central electromotive force, according to second embodiment picture signal that will offer each pixel is input to the se of differential amplifier 4a as the signal corresponding to described detection signal (being high signal and low signal), and the central electromotive force that will have with the polarities of potentials opposite polarity of this picture signal is input to so as the signal corresponding to reference voltage V ref.
Then, in differential amplifier 4a, the described central electromotive force (being input to so) that offers the electromotive force (being input to se) of the described picture signal of this pixel and have a reversed polarity is compared, and amplify electric potential difference between them.In other words, when the electromotive force of described picture signal during greater than (positive polarity) central electromotive force, the electromotive force of output se is as the highest electromotive force (high signal).When the electromotive force of described picture signal during less than (negative polarity) central electromotive force, the electromotive force of output se is as minimum electromotive force (low signal) (and output of so has opposite relation).
Herein, under general white mode (white mode), central electromotive force is corresponding to white demonstration, and the highest electromotive force and minimum electromotive force show corresponding to black.Therefore, can obtain corresponding to the output of the electromotive force of picture signal as se and so with minimum intensity (black show).
In this case, output potential of the output potential of se and so has the polarity of counter-rotating with respect to central electromotive force.
Herein, by in effective display cycle, output potential of se or so being offered the insertion (pulsed drive) that each pixel can realize black signal.
When in each horizontal scanning period, making the polarities of potentials counter-rotating of picture signal, promptly when implementing so-called 1H inversion driving, output potential with so in horizontal flyback period offers each source electrode line, thereby can be to make source electrode line precharge corresponding to the black electromotive force that shows in the 1H Umklapp process.
The present invention also comprises the electro-optic device with electro-optic device substrate of the present invention.
For example, the present invention can comprise the electro-optic device with a pair of substrate, has electro-optical substance between this is to substrate, and a described substrate is an electro-optic device substrate of the present invention.
The present invention also comprises the electronic installation with described electro-optic device.Figure 18 to 20 has represented the example of this electronic installation.Figure 18 is the outside drawing according to the personal computer of an example.Figure 19 is the outside drawing according to the portable phone of an embodiment.
As shown in figure 18, will be used as the display part 101 of personal computer 100 such as the electro-optic device of liquid crystal display, this personal computer is exactly described electronic installation.As shown in figure 19, will be used as the display part 201 of portable phone 200 such as the electro-optic device of liquid crystal display, this portable phone is exactly described electronic installation.
Figure 20 is the explanatory sketch of projection type color display apparatus, and it is the example that has as the electronic installation of the electro-optic device of bulb.
In Figure 20, the liquid crystal projection apparatus 1100 as projection type color display apparatus example according to present embodiment has three Liquid Crystal Modules, this module comprises liquid crystal display, it comprises the driving circuit that is installed on the tft array substrate, and this liquid crystal projection apparatus is the projector that has as the Liquid Crystal Module of the bulb 100R, the 100G that are used for the RGB look and 100B.In liquid crystal projection apparatus 1100, the projected light that to launch from the lamp unit 1102 (such as metal halide lamp) of white light source is divided into light component R, G and the B corresponding to three primary colors RGB, and utilizes three catoptrons 1106 and two dichroic mirrors (dichromic mirror) 1108 that it is directed to bulb 100R, 100G and 100B corresponding to these three colors.In this case, because the light loss that optical path length causes especially makes the guiding of B light by relay lens system 1121, it comprises input lens 1122, relay lens 1123 and output lens 1124 in order to prevent.Then, utilize dichroic prism 1112 to make the synthetic again of process bulb 100R, 100G and 100B modulation, project on the screen 1120 by projecting lens 1114 as coloured image then corresponding to trichromatic light component.
This electronic installation may further include TV, viewfinder type/monitor direct viewing catalog camera, automobile navigation apparatus, pager, electronic notebook, counter, word processor, workstation, videophone, POS terminal, digital still camera and comprises the device of touch pad.The electronic installation that clearly, can be used for these types according to display board of the present invention.

Claims (24)

1. electro-optical device substrate comprises:
Cross one another a plurality of sweep trace and a plurality of signal wire;
The a plurality of pixels that are provided with according to the intersection point of these a plurality of sweep traces and a plurality of signal wires; And
The amplifying circuit that is electrically connected with described signal wire, the signal that wherein will be input to pixel is input to this amplifying circuit by described signal wire, thereby amplifies the electromotive force of this input signal;
Wherein this amplifying circuit is electrically connected with a pair of signal wire, and amplifies from the electric potential difference between this signal that each signal wire signal wire is provided.
2. electro-optical device substrate comprises:
Cross one another a plurality of sweep trace and a plurality of signal wire;
Be set to a plurality of pixels of matrix according to the intersection point of these a plurality of sweep traces and a plurality of signal wires;
Each a plurality of on-off element that provide in described a plurality of pixel are provided;
Amplifying circuit is input to this amplifying circuit with first electric signal by first signal wire in described a plurality of signal wires, and will be input to this amplifying circuit as second electric potential signal of reference potential; And
Data reader, it reads the output potential signal that outputs to described a plurality of signal wires from described amplifying circuit,
Wherein this amplifying circuit compares first electric potential signal and second electric potential signal, and, if first electric potential signal is lower, then reduce the electromotive force of this signal wire and will reduce after the output potential signal output to described signal wire, if the first electric potential signal height, then improve the electromotive force of described signal wire and will improve after the output potential signal output to described signal wire.
3. electro-optical device substrate according to claim 2, wherein:
First electric potential signal has by described a plurality of on-off elements and offers all or part of the electromotive force of signal in these a plurality of pixels;
The electromotive force of the electromotive force of second electric potential signal for providing from the reference signal line.
4. electro-optical device substrate according to claim 2, wherein:
First electric potential signal and second electric potential signal have the electromotive force that offers all or part of signal of these a plurality of pixels by described a plurality of on-off elements; And
First signal wire by described a plurality of signal wires and secondary signal line offer separately amplifying circuit respectively with first electric potential signal and second electric potential signal.
5. according to each described electro-optical device substrate in the claim 2 to 4, wherein this amplifying circuit is a differential amplifier.
6. according to each described electro-optical device substrate in the claim 2 to 5, wherein this data reader has and is used to export the described differential amplifier that reads electric potential signal.
7. according to each described electro-optical device substrate in the claim 2 to 6, wherein each in these a plurality of pixels has additional capacitors.
8. according to each described electro-optical device substrate in the claim 2 to 7, also comprise the pre-charge circuit that links to each other with described a plurality of signal wires, be used for the electromotive force of described a plurality of signal wires is pre-charged to predetermined potential.
9. according to each described electro-optical device substrate in the claim 2 to 8, also comprise:
Be used to provide the image signal line of picture signal, this picture signal is provided for described a plurality of pixel, and the picture signal that is used for providing from described image signal line offers a plurality of transmission gates of described a plurality of signal wires,
Wherein this data reader comprises described image signal line.
10. an electro-optical device wherein provides electro-optical substance between a pair of substrate, this device comprise be arranged in this on one of substrate according to each described electro-optical device substrate of claim 2 to 9.
11. an electronic equipment, it comprises electro-optical device according to claim 10.
12. one kind is used for the electro-optical device substrate detecting method, this electro-optical device substrate has cross one another a plurality of sweep trace and a plurality of signal wire, be set to a plurality of pixels of matrix according to the intersection point of described a plurality of sweep traces and a plurality of signal wires, and each a plurality of on-off element that provide in described a plurality of pixel are provided, this method comprises:
Step is provided, first electric potential signal is offered pixel corresponding to one of described signal wire;
Read step reads first electric potential signal that offers this pixel by described signal wire;
The output step, to have different electromotive forces and compare as second electric potential signal and described first electric potential signal that reads of reference signal with first electric potential signal, if described first electric potential signal is low, then reduce the electromotive force of described signal wire, and the output potential signal after will reducing outputs to described signal wire, and, if the described first electric potential signal height, then improve the electromotive force of described signal wire, and the output potential signal after the described raising is outputed to described signal wire; And
Comparison step, the described output potential signal that described first electric potential signal and the output step that provide step to provide are exported compares.
13. electro-optical device substrate detecting method according to claim 12 also comprises precharge step, this step makes described signal wire have predetermined pre-charge potential before read step.
14. electro-optical device substrate detecting method according to claim 13, wherein said predetermined pre-charge potential are the intermediate electric potential between described first electric potential signal and described second electric potential signal.
15. according to each described electro-optical device substrate detecting method in the claim 12 to 14, each in wherein said a plurality of pixels has additional capacitors.
16. according to each described electro-optical device substrate detecting method in the claim 12 to 15, the electromotive force that provides for the outside of the electromotive force of second electric potential signal wherein.
17. electro-optical device substrate detecting method according to claim 12, wherein:
In step was provided, first and second electric potential signals had the electromotive force that offers the described signal of two pixels by described a plurality of on-off elements; And
In read step, two signal wires by separately read first and second electric potential signals.
18. electro-optical device substrate detecting method according to claim 17, wherein:
Step is being provided, with one in described two pixels as being examined processes pixel, and high signal is offered this as first electric potential signal examined pixel, and in described two pixels another handled as benchmark pixel, and low signal is offered this benchmark pixel as second electric potential signal; And
In comparison step,, then determine described additional capacitor fault if to be examined the electric potential signal that pixel reads be low from described.
19. electro-optical device substrate detecting method according to claim 18, the electromotive force of the public fixed electorde of wherein said additional capacitor are lower than the described electromotive force when described low signal is provided.
20. electro-optical device substrate detecting method according to claim 13, wherein said predetermined pre-charge potential are the electromotive force that is higher than the described electromotive force of output step raising.
21. electro-optical device substrate detecting method according to claim 20, wherein:
In step is provided, with one in described two pixels as being examined processes pixel, and low signal is offered this as first electromotive force examined pixel, in described two pixels another handled as benchmark pixel, and high signal is offered described benchmark pixel as second electromotive force; And
In comparison step,, then determine to have fault in the described on-off element if examined electric potential signal that pixel reads for high from described.
22. electro-optical device substrate detecting method according to claim 14, wherein:
In step is provided, with one in described two pixels as being examined processes pixel, and low or high signal is offered this as first electromotive force examined pixel, in described two pixels another handled as benchmark pixel, and the intermediate electric potential signal that will have an electromotive force between the electromotive force of described first low signal and described high signal offers described benchmark pixel as second electromotive force; And
In comparison step,, then determine the fault of described on-off element or described additional capacitor if to be examined the electromotive force and first electromotive force that pixel reads inconsistent from described.
23. according to claim 17,18,19,21 and 22 described electro-optical device substrate detecting method, wherein said two signal wires are adjacent one another are.
24., wherein successively described a plurality of pixels are carried out step, read step, output step and comparison step are provided according to each described electro-optical device substrate detecting method in the claim 12 to 23.
CNB2005800269816A 2004-08-10 2005-08-08 Electrooptic apparatus substrate and method of examining such a substrate, electrooptic apparatus and electronic equipment Expired - Fee Related CN100476909C (en)

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