CN100468955C

CN100468955C - Cascode and serial low-noise amplifier implemented by single-end input and differential output

Info

Publication number: CN100468955C
Application number: CNB2006100041365A
Authority: CN
Inventors: 苏烱光; 刘慈祥; 陈家豪; 陈志纬; 陈韶华; 吴汉豪
Original assignee: Ali Corp
Current assignee: Ali Corp
Priority date: 2006-02-21
Filing date: 2006-02-21
Publication date: 2009-03-11
Anticipated expiration: 2026-02-21
Also published as: CN101026357A

Abstract

Possessing characteristics of low noise and high gain, the amplifier with low noise includes first transistor, first inductance type impedance, first grid voltage source, matching circuit, input end, second inductance type impedance, second transistor, first capacitance type impedance, second grid voltage source, third transistor, third grid voltage source, second capacitance type impedance, first impedance, second impedance, DC power supply, first output end, second output end, first resistance, second resistance, third resistance, first reference element, second reference element, and third reference element.

Description

String repeatedly with concatenation type and the low noise amplifier implemented with the differential output of single-ended input

Technical field

The present invention discloses a kind of low noise amplifier, refer to especially a kind of string repeatedly with concatenation type and the low noise amplifier implemented with the differential output of single-ended input.

Background technology

Low noise amplifier belongs to the part of receiver in the communication system (receiver), is playing the part of the function that the signal that will receive amplifies and suppress the noise of receiver itself in the receiver design of general communication system.General design major part all is the framework of the single-ended output of single-ended input, yet the framework of the single-ended output of single-ended input makes that being connected on low noise amplifier frequency mixer (mixer) afterwards must be designed to single-ended input type frequency mixer, therefore can't effectively reduce the common-mode noise of frequency mixer and the signal that is reached frequency mixer output by oscillator.

When the low noise amplifier of the differential output of design, the simplest and easy and the most common framework is the low noise amplifier of the differential output of differential input.Yet the low noise amplifier of the differential output of differential input must add the transducer (balun) of one-level balance-to-nonbalance on the previous stage of this low noise amplifier, so that the single-ended received signal of antenna end transfers differential wave to.Add the transducer that uses this balance-to-nonbalance and realize the cost of low noise amplifier that except the meeting increase loss of the transducer of this balance-to-nonbalance itself also can relatedly make the noise pointer (noise figure) of whole receiver increase.

See also Fig. 1, it is a kind of use passive type transducer of the prior art schematic diagram with the low noise amplifier 100 of realizing the differential output of single-ended input.As shown in Figure 1, low noise amplifier 100 comprises transducer 102, comprise first inductance 104 and second inductance 106 and input 108, the first transistor 110, its gate coupled is in first end of second inductance 106, DC current source 112, be coupled in the source electrode of the first transistor 110, transistor seconds 114, its gate coupled is in second end of inductance 106, and source-coupled is in current source 112, first exports matched impedance 116, is coupled in the drain electrode of the first transistor 110, the second output matched impedance 118, be coupled in the drain electrode of transistor seconds 114, first output 120 is coupled in the drain electrode of the first transistor 110 and second output 122, be coupled in the drain electrode of transistor seconds 114, and first output 120 and second output 122 are that to form the differential output of low noise amplifier 100 right.The inductance 104 and 106 that transducer 102 comprises is to be formed by the coiling of the metal on the integrated circuit, and transducer 102 provides the signal of the first transistor 110 with transistor seconds 114 1 phase differences 180 by inductance 104 and 106, by the first transistor 110 and transistor seconds 114 this signal is amplified to produce high-frequency signal again.

See also Fig. 2, it is a kind of schematic diagram with the low noise amplifier 200 of an end ground connection of differential pair of transistors of prior art.As shown in Figure 2, low noise amplifier 200 comprises the first input matched impedance 202, input 208, be coupled in first end of the first input matched impedance 202, the first transistor 210, its gate coupled is in second end of the first input matched impedance 202, DC current source 212, be coupled in the source electrode of the first transistor 210, transistor seconds 214, its source-coupled is in current source 212, the second input matched impedances 204, be coupled in the grid of transistor seconds 214, first exports matched impedance 216, is coupled in the drain electrode of the first transistor 210, the second output matched impedance 218, be coupled in the drain electrode of transistor seconds 214, first output 220 is coupled in the drain electrode of the first transistor 210 and second output 222, be coupled in the drain electrode of transistor seconds 214, and the differential output of first output 220 and second output, 222 formation low noise amplifiers 200 is right.As shown in Figure 2, low noise amplifier 200 is directly with a transistorized end ground connection, therefore compared to low noise amplifier shown in Figure 1 100, can directly save more space consuming metal coiling, that is omit the inductance 104 and 106 that transducer 102 is comprised, also can reduce the loss that transducer 102 is brought.But because under high-frequency operation, the ghost effect of assembly very obviously, so the first transistor 210 and the operation of transistor seconds 214 can present the symmetry of extreme difference.

Fig. 1 and low noise amplifier shown in Figure 2 are main framework with differential pair of transistors all, therefore under identical service voltage, the electric current of current source 112 be flow through the first transistor 110 and transistor seconds 114 electric current and, and the electric current of current source 212 be flow through the first transistor 210 and transistor seconds 214 electric current and.

See also Fig. 3, it is the disclosed single-ended schematic diagram that inputs to the low noise amplifier 300 of differential output of a kind of prior art.Low noise amplifier 300 comprises the first transistor 302, first inductance 304, its first end is coupled in the collection utmost point of the first transistor 302, and the second end ground connection, transistor seconds 306, second inductance 308, its first end is coupled in the collection utmost point of transistor seconds 306, and the second end ground connection, first electric capacity 310, its first end is coupled in the emitter-base bandgap grading of the first transistor 302, and second end is coupled in the base stage of transistor seconds 306, the 3rd transistor 312, its collection utmost point is coupled in the emitter-base bandgap grading of the first transistor 302, the 4th transistor 314, its collection utmost point is coupled in the emitter-base bandgap grading of transistor seconds 306, second electric capacity 316, its first end is to be coupled in the base stage of the 3rd transistor 312 and the base stage of the 4th transistor 314, and the second end ground connection, the first inductance type impedance 318, its first end is coupled in the emitter-base bandgap grading of the 3rd transistor 312, and second is connected to direct voltage source VDD, the second inductance type impedance 320, its first end is coupled in the emitter-base bandgap grading of the 4th transistor 314, and second is connected to direct voltage source VDD, the 3rd electric capacity 322, its first end is coupled in the emitter-base bandgap grading of the 3rd transistor 312, the 4th electric capacity 324, and its first end is coupled in the emitter-base bandgap grading of the 4th transistor 314, input 326, be coupled in the base stage of the first transistor 302, bias voltage input 328 is coupled in the base stage of the 3rd transistor 312 and the base stage of the 4th transistor 314, first output 330, be coupled in second end of the 3rd electric capacity 322, and second output 332, be coupled in second end of the 4th electric capacity 324.As shown in Figure 3, the base stage that input signal is imported and entered the first transistor 302 by input 326, this input signal is two-way in node A punishment shown in Figure 3 after amplifying via the first transistor 302.One road signal arrives second output 332 via transistor seconds 306 and the 4th transistor 314, and because transistor seconds 306 forms common emitter (common-emitter) configuration, therefore input and the output signal via transistor seconds 306 can produce 180 phase differences of spending.And other one the tunnel arrive first output 330 via the 3rd transistor 312, and because the 3rd transistor 312 be common base (common-base) and dispose that so its input has identical phase place with output signal herein.Therefore, can produce the phase difference of 180 degree at the signal of first output 330 and second output 332.

Summary of the invention

The invention provides a kind of string repeatedly (cascode) and the low noise amplifier that is connected in series (cascade) formula and implements with the differential output of single-ended input, it comprises the first transistor, the first inductance type impedance, its first end is connected in the source electrode of this first transistor, and the second end ground connection, the primary grid voltage source, be coupled in the grid of this first transistor, match circuit, its first end is coupled in the grid of this first transistor, the second end ground connection, input, be coupled in the 3rd end of this match circuit, the second inductance type impedance, its first end is connected in the drain electrode of this first transistor, transistor seconds, its source electrode is connected in second end of this second inductance type impedance, the first condenser type impedance, and its first end is connected in the drain electrode of this first transistor, second end is connected in the grid of this transistor seconds, the second grid voltage source is coupled in the grid of this transistor seconds, the 3rd transistor, its source electrode is connected to the drain electrode of this first transistor, the 3rd gate-voltage source is coupled in the 3rd transistorized grid, the second condenser type impedance, its first end is connected to the 3rd transistorized grid, the second end ground connection, first impedance, its first end is connected in the drain electrode of this transistor seconds, second impedance, its first end is connected in the 3rd transistor drain, and DC power supply is connected in second end of this first impedance and second end of this second impedance, first voltage output end, be connected in the drain electrode of this transistor seconds, and second voltage output end, be connected in the 3rd transistor drain.

The present invention also provide a kind of string repeatedly with concatenation type and the low noise amplifier implemented with the differential output of single-ended input, it comprises: the first transistor; The first inductance type impedance, its first end is connected in the drain electrode of this first transistor; The primary grid voltage source is coupled in the grid of this first transistor; Match circuit, its first end is coupled in the grid of this first transistor; Input is coupled in second end of this match circuit; The second inductance type impedance, its first end is connected in the source electrode of this first transistor; Transistor seconds, its drain electrode are connected in second end of this second inductance type impedance; The first condenser type impedance, its first end is connected in the source electrode of this first transistor, and second end is connected in the grid of this transistor seconds; The second grid voltage source is coupled in the grid of this transistor seconds; The 3rd transistor, its drain electrode is connected to the source electrode of this first transistor; The 3rd gate-voltage source is coupled in the 3rd transistorized grid; The second condenser type impedance, its first end is connected to the 3rd transistorized grid; First impedance, its first end is connected in the source electrode of this transistor seconds, the second end ground connection; Second impedance, its first end is connected in the 3rd transistorized source electrode, the second end ground connection; DC power supply, be connected in second end, this match circuit of this first inductance type impedance the 3rd end, with second end of this second condenser type impedance; First voltage output end is connected in the source electrode of this transistor seconds; And second voltage output end, be connected in the 3rd transistorized source electrode.

Description of drawings

Fig. 1 is the previous schematic diagram that uses the passive type transducer with the low noise amplifier of realizing the differential output of single-ended input.

Fig. 2 is before with the schematic diagram of the low noise amplifier of an end ground connection of differential pair of transistors.

Fig. 3 is the previous single-ended schematic diagram that inputs to the low noise amplifier of differential output.

Fig. 4 is the single-ended schematic diagram that inputs to the low noise amplifier of differential output proposed by the invention.

Fig. 5 is the schematic diagram of the present invention with the low noise amplifier of P-type mos field-effect transistor enforcement.

Fig. 6 is the schematic diagram of the present invention with the low noise amplifier of NPN bipolar transistor enforcement.

Fig. 7 is the schematic diagram of the present invention with the low noise amplifier of PNP bipolar transistor enforcement.

[main element label declaration]

Low noise amplifier 100,200,300,400,500,600,700

Transducer 102

Inductance 104,106,304,308

Input 108,208,326,410

N type metal oxide semiconductor 110,114,210,214,402,414,420

P-type mos 502,514,520

NPN bipolar transistor 302,306,312,314,602,614,620

PNP bipolar transistor 702,714,720

Current source 112,212

Output matched impedance 116,118,216,218

Output 120,122,220,222,330,332,432,434

Input matched impedance 202,204

Electric capacity 310,316,322,324

Inductance type impedance 318,320,404,412

Bias voltage input 328

Gate-voltage source 406,418,422

Match circuit 408

Condenser type impedance 416,424

Impedance 426,428

DC power supply 430

Resistance 436,438,440

Reference element 442,444,446

Embodiment

See also Fig. 4, it is the single-ended schematic diagram that inputs to the low noise amplifier 400 of differential output proposed by the invention.As shown in Figure 4, low noise amplifier 400 comprises the first transistor 402, the first inductance type impedance 404, its first end is connected in the source electrode of the first transistor 402, and the second end ground connection, primary grid voltage source 406, be coupled in the grid of the first transistor 402, match circuit 408, its first end is coupled in the grid of the first transistor 402, the second end ground connection, input 410, be coupled in the 3rd end of match circuit 408, the second inductance type impedance 412, its first end is connected in the drain electrode of the first transistor 402, transistor seconds 414, its source electrode is connected in second end of the second inductance type impedance 412, the first condenser type impedance 416, its first end is connected in the drain electrode of the first transistor 402, second end is connected in the grid of transistor seconds 414, second grid voltage source 418, be coupled in the grid of transistor seconds 414, the 3rd transistor 420, its source electrode is connected in the drain electrode of the first transistor 402, the 3rd gate-voltage source 422, be coupled in the grid of the 3rd transistor 420, the second condenser type impedance 424, its first end is connected in the grid of the 3rd transistor 420, the second end ground connection, first impedance 426, its first end is connected to the drain electrode of transistor seconds 414, second impedance 428, its first end is connected in the drain electrode of the 3rd transistor 420, DC power supply 430, be connected in second end of first impedance 426 and second end of second impedance 428, first output 432, be connected in the drain electrode of transistor seconds 414, second output 434, be connected in the drain electrode of the 3rd transistor 420, first resistance 436, be connected between the grid and primary grid voltage source 406 of the first transistor 402, second resistance 438, be connected between the grid and second grid voltage source 418 of transistor seconds 414, the 3rd resistance 440 is connected between the grid and the 3rd gate-voltage source 422 of the 3rd transistor 420, first reference element 442, its first end is coupled in the substrate (bulk) of the first transistor 402, second reference element 444, and its first end is coupled in the substrate of transistor seconds 414, and the 3rd reference element 446, its first end is coupled in the substrate of the 3rd transistor 420.

In Fig. 4, the first transistor 402, transistor seconds 414, the 3rd transistor 420 are N type metal oxide semiconductor field-effect transistor (N-MOSFET).First resistance 436, second resistance 438, the 3rd resistance 440 are high-impedance resistors, are used for preventing that under high-frequency operation signal is leaked to bias circuit by the grid of the first transistor 402, transistor seconds 414, the 3rd transistor 420.The first inductance type impedance 404 is to be used for auxiliary impedance matching effect.The second inductance type impedance 412 is to be used under high-frequency operation, the high-frequency signal of the drain electrode of isolation the first transistor 402 and the source electrode of transistor seconds 414, but can make the direct current between flow.The first condenser type impedance 416 is to be used under high-frequency operation, makes the drain electrode of the first transistor 402 and the gate turn-on of transistor seconds 414, but can completely cut off between the two direct voltage and electric current.The second condenser type impedance 424 is to be used under high-frequency operation, make the current potential of grid of the 3rd transistor 420 near earth terminal but do not influence the DC potential of the grid of the 3rd transistor 420 itself again.First impedance 426 and second impedance 428 are a pair of matched impedance, are used for being used as the matched impedance of output, and make resistance value can reach set point.Match circuit 408 is general known match circuit, can be implemented in a different manner.First reference element 442, second reference element 444, the 3rd reference element 446 are direct voltage source, and the needs of the visual bias voltage of its second end are connected in separately the transistorized source electrode of coupling simultaneously, or are connected in direct voltage source, or ground connection.

When low noise amplifier 400 was in high-frequency operation, high-frequency signal was entered by input 410, arrived the drain electrode of the first transistor 402 through match circuit 408 and the first transistor 402.Because the characteristic of metal oxide semiconductcor field effect transistor itself, the input of the first transistor 402 and output voltage can produce the phase difference near 180 degree.Can arrive the grid of transistor secondses 414 by the first condenser type impedance 416 at the signal of the first transistor 402 drain electrode, therefore be positioned at the first transistor 402 drain electrode signal can with the signal same-phase of the grid that is positioned at transistor seconds 414.Moreover, owing between the source electrode of the drain electrode of the first transistor 402 and transistor seconds 414, have the second inductance type impedance 412, can prevent that therefore high-frequency signal from being seen through the drain electrode of passage (channel) the arrival transistor seconds 414 of the source electrode of transistor seconds 414 and transistor seconds 414 by the drain electrode of the first transistor 402.Can be amplified to the drain electrode of transistor seconds 414 through the common source configuration of transistor seconds 414 at the signal of transistor seconds 414 grids, that is first output 432, and phase difference near 180 degree can and be arranged between the signal of transistor seconds 414 grids at the signal of first output 432.Therefore, the phase differences of 360 degree can and be arranged between the signal of first output 432 at the signal of input 410, that is in the signal of input 410 and signal same-phase at first output 432.

Simultaneously, the signal that is positioned at the drain electrode of the first transistor 402 can be amplified through the common gate configuration of the 3rd transistor 420, and outputs to the drain electrode of the 3rd transistor 420, that is outputs to second output 434.Because the characteristic of metal oxide semiconductcor field effect transistor itself is added in the configuration of the common gate of the 3rd transistor 420, therefore the signal of the 3rd transistor 420 source electrodes can with the signal same-phase at the 3rd transistor drain, that is the signal of the 3rd transistor 420 source electrodes can with the signal same-phase at second output 434.Therefore produce phase differences at the signal system of input 410 and signal, therefore at the signal of first output 432 and the signal of second output 434 180 phase differences of spending of can having an appointment near 180 degree at second output.Originally the high-frequency signal by 410 single-ended inputs of input has produced the phase difference of 180 degree at two outputs, thereby has realized the single-ended low noise amplifier that inputs to differential output.

In Fig. 4, transistor seconds 414 might not equate with bias voltage with the size of the 3rd transistor 420, and size that can be by adjusting transistor seconds 414 and the 3rd transistor 420 and bias voltage obtain the required linearity, gain (gain), and 180 phase differences of spending.

Compared to low noise amplifier shown in Figure 1 100, low noise amplifier 400 is except the metal coiling area that the transducer 102 that can save down low noise amplifier 100 takies, under identical direct voltage supply and identical electric current, low noise amplifier 400 of the present invention has higher gain and lower noise pointer.In addition, transistor of the present invention combination and low noise amplifier 100 shown in Figure 1 under identical VDD direct voltage, the string that all the comprises two-staged transistor structure that changes, so its linearity does not also have impairment compared to low noise amplifier shown in Figure 1 100.

Compared to the low noise amplifier 200 of an end ground connection of differential pair of transistors shown in Figure 2, low noise amplifier of the present invention 400 is same has the gain and lower noise pointer higher than low noise amplifier 200 under identical direct voltage supply and identical electric current.And because the first transistor 402 that low noise amplifier 400 of the present invention comprises is the common source configuration, therefore more accurate than low noise amplifier 200 on the high frequency coupling of noise pointer and gain, the complexity of design is also lower.

Compared to the single-ended low noise amplifier 300 that inputs to differential output shown in Figure 3, the first transistor 402 that low noise amplifier 400 of the present invention comprises has the first transistor 302 identical common sources that comprise with low noise amplifier 300 and disposes, and because the first transistor 302 is bipolar junction transistor (bipolar junction transistor, BJT), therefore the configuration of the first transistor 302 is to be called the common emitter configuration, therefore on the high frequency matching Design of gain and noise pointer low noise amplifier 200 all more shown in Figure 2 accurately and the complexity of design also lower.Yet, because in Fig. 3, the first transistor 302 of flowing through equates with the electric current of the 3rd transistor 312, and the transistor seconds 306 of flowing through equates with the electric current of the 4th transistor 314, so low noise amplifier 300 employed electric currents are the electric current sum of the first transistor 302 and transistor seconds 306 of flowing through.And in the low noise amplifier 400 of the present invention, the electric current of the first transistor 402 of flowing through is the electric current sum of transistor seconds 414 and the 3rd transistor 420 of flowing through, so the electric current of the first transistor 402 of flowing through is low noise amplifier 400 employed electric currents.Under the condition of the same total direct current of low noise amplifier, the first transistor 302 that the first transistor 402 that low noise amplifier 400 of the present invention comprises comprises than low noise amplifier 300 has the performance than low noise and higher gain, and this phenomenon system leads because of the first transistor 302 in the first transistor 402 of the present invention under identical total direct current compared to low noise amplifier 300 and can be loaded with due to the more electric current.Moreover, output signal for the low noise amplifier 300 of Fig. 3, the input signal of high frequency system through the first transistor 302, transistor seconds 306, with the amplification of the 4th transistor 314, therefore comparatively limited in the performance of the linearity, and the transistorized amplification of low noise amplifier of the present invention 400 processes secondary, so restriction is little than low noise amplifier 300 in the performance of the linearity.

Implement the employed transistor of low noise amplifier of the present invention except N type metal oxide semiconductor field-effect transistor shown in Figure 4, still can use P-type mos field-effect transistor and bipolar junction transistor etc., and low noise amplifier 400 shown in Figure 4 only is a most preferred embodiment of the present invention, also be about to assembly of the present invention and replaced still within the scope of the invention, be not subjected to restriction shown in Figure 4.Fig. 5 extremely shown in Figure 7 being is replaced the embodiment that is produced with assembly of the present invention.

See also Fig. 5, it is the schematic diagram of the present invention with the low noise amplifier 500 of P-type mos field-effect transistor enforcement.Except the accurate position in DC power supply 430 and ground is changed, and the N type metal oxide semiconductor field-effect transistor that low noise amplifier 400 is comprised all is replaced into P-type mos field-effect transistor (P-MOSFET) in addition, the structure of low noise amplifier 500 and low noise amplifier of the present invention 400 are much at one, that is only transistor 402 is replaced into transistor 502, transistor 414 is replaced into transistor 514, and transistor 420 is replaced into transistor 520.Transistor 502,514, and 514 be all the P-type mos field-effect transistor.

See also Fig. 6, it is the schematic diagram of the present invention with the low noise amplifier 600 of NPN bipolar transistor enforcement.Except the N type metal oxide semiconductor field-effect transistor that low noise amplifier 400 is comprised all is replaced into NPN bipolar junction transistors (NPN bipolar junction transistor), the structure of low noise amplifier 600 and low noise amplifier of the present invention 400 are much at one, that is only transistor 402 is replaced into transistor 602, transistor 414 is replaced into transistor 614, and transistor 420 is replaced into transistor 620.Transistor 602,614, and 614 be all the NPN bipolar transistor.

See also Fig. 7, it is the schematic diagram of the present invention with the low noise amplifier 700 of PNP bipolar transistor enforcement.Except the accurate position in DC power supply 430 and ground is changed, and the N type metal oxide semiconductor field-effect transistor that low noise amplifier 400 is comprised all is replaced into PNP bipolar junction transistor (PNPbipolar junction transistor) in addition, the structure of low noise amplifier 700 and low noise amplifier of the present invention 400 are much at one, that is only transistor 402 is replaced into transistor 702, transistor 414 is replaced into transistor 714, and transistor 420 is replaced into transistor 720.Transistor 702,714, and 720 be all the PNP bipolar transistor.

The present invention is to use string repeatedly to implement the low noise amplifier of the differential output of single-ended input with the structure that is connected in series, under identical DC consumption power and high-frequency operation, low noise amplifier provided by the present invention is the advantage with high-gain and low noise pointer, particularly the characteristic under high-frequency operation also can design accurately than the disclosed low noise amplifier of prior art, and the performance on the linearity is also identical with the disclosed part low noise amplifier of prior art, even good than the part low noise amplifier.

The above only is preferred embodiment of the present invention, and all equalizations of being done according to claim scope of the present invention change and modify, and all should belong to covering scope of the present invention.

Claims

A string repeatedly with concatenation type and the low noise amplifier implemented with the differential output of single-ended input, it comprises:

The first transistor;

The first inductance type impedance, its first end is connected in the source electrode of this first transistor, and the second end ground connection;

The primary grid voltage source is coupled in the grid of this first transistor;

Match circuit, its first end is coupled in the grid of this first transistor, the second end ground connection;

Input is coupled in the 3rd end of this match circuit;

The second inductance type impedance, its first end is connected in the drain electrode of this first transistor;

Transistor seconds, its source electrode are connected in second end of this second inductance type impedance;

The first condenser type impedance, its first end is connected in the drain electrode of this first transistor, and second end is connected in the grid of this transistor seconds;

The second grid voltage source is coupled in the grid of this transistor seconds;

The 3rd transistor, its source electrode is connected to the drain electrode of this first transistor;

The 3rd gate-voltage source is coupled in the 3rd transistorized grid;

The second condenser type impedance, its first end is connected to the 3rd transistorized grid, the second end ground connection;

First impedance, its first end is connected in the drain electrode of this transistor seconds;

Second impedance, its first end is connected in the 3rd transistor drain;

DC power supply is connected in second end of this first impedance and second end of this second impedance;

First voltage output end is connected in the drain electrode of this transistor seconds; And

Second voltage output end is connected in the 3rd transistor drain.
2. low noise amplifier according to claim 1, wherein this three transistors the first transistor, transistor seconds and the 3rd transistor are N type metal oxide semiconductor transistor.
3. low noise amplifier according to claim 2, wherein the substrate of this first transistor is the emitter-base bandgap grading that is connected in this first transistor.
4. low noise amplifier according to claim 2, wherein the substrate of this transistor seconds is the emitter-base bandgap grading that is connected in this transistor seconds, the 3rd transistorized substrate is to be connected in the 3rd transistorized emitter-base bandgap grading.
5. low noise amplifier according to claim 1, wherein the substrate of this first transistor is ground connection or direct voltage source.
6. low noise amplifier according to claim 1, wherein the substrate of this transistor seconds is ground connection or is connected in direct voltage source, the 3rd transistorized substrate is ground connection or is connected in direct voltage source.
7. low noise amplifier according to claim 2 also comprises:

First resistance is connected between the grid and this primary grid voltage source of this first transistor;

Second resistance is connected between the grid and this second grid voltage source of this transistor seconds; And

The 3rd resistance is connected between the 3rd transistorized grid and the 3rd gate-voltage source.
8. low noise amplifier according to claim 1, wherein this first transistor, transistor seconds and the 3rd transistor are the NPN bipolar junction transistor.
9. low noise amplifier according to claim 8, wherein the substrate of this first transistor is the emitter-base bandgap grading that is connected in this first transistor.
10. low noise amplifier according to claim 8, wherein the substrate of this transistor seconds is the emitter-base bandgap grading that is connected in this transistor seconds, the 3rd transistorized substrate is to be connected in the 3rd transistorized emitter-base bandgap grading.
11. a string repeatedly with concatenation type and the low noise amplifier implemented with the differential output of single-ended input, it comprises:

The first transistor;

The first inductance type impedance, its first end is connected in the drain electrode of this first transistor;

The primary grid voltage source is coupled in the grid of this first transistor;

Match circuit, its first end is coupled in the grid of this first transistor;

Input is coupled in second end of this match circuit;

The second inductance type impedance, its first end is connected in the source electrode of this first transistor;

Transistor seconds, its drain electrode are connected in second end of this second inductance type impedance;

The first condenser type impedance, its first end is connected in the source electrode of this first transistor, and second end is connected in the grid of this transistor seconds;

The second grid voltage source is coupled in the grid of this transistor seconds;

The 3rd transistor, its drain electrode is connected to the source electrode of this first transistor;

The 3rd gate-voltage source is coupled in the 3rd transistorized grid;

The second condenser type impedance, its first end is connected to the 3rd transistorized grid;

First impedance, its first end is connected in the source electrode of this transistor seconds, the second end ground connection;

Second impedance, its first end is connected in the 3rd transistorized source electrode, the second end ground connection;

DC power supply, be connected in second end, this match circuit of this first inductance type impedance the 3rd end, with second end of this second condenser type impedance;

First voltage output end is connected in the source electrode of this transistor seconds; And

Second voltage output end is connected in the 3rd transistorized source electrode.
12. low noise amplifier according to claim 11, wherein this first transistor, transistor seconds and the 3rd transistor are the P-type mos transistor.
13. low noise amplifier according to claim 12, wherein the substrate of this first transistor is the source electrode that is connected in this first transistor.
14. low noise amplifier according to claim 12, wherein the substrate of this transistor seconds is the source electrode that is connected in this transistor seconds, and the 3rd transistorized substrate is to be connected in the 3rd transistorized source electrode.
15. low noise amplifier according to claim 11, wherein the substrate of this first transistor is ground connection or direct voltage source.
16. low noise amplifier according to claim 11, wherein the substrate of this transistor seconds is ground connection or is connected in direct voltage source, and the 3rd transistorized substrate is ground connection or is connected in direct voltage source.
17. low noise amplifier according to claim 12 also comprises:

First resistance is connected between the grid and this primary grid voltage source of this first transistor;

Second resistance is connected between the grid and this second grid voltage source of this transistor seconds; And

The 3rd resistance is connected between the 3rd transistorized grid and the 3rd gate-voltage source.
18. low noise amplifier according to claim 11, wherein this first transistor, transistor seconds and the 3rd transistor are the PNP bipolar junction transistor.
19. low noise amplifier according to claim 18, wherein the substrate of this first transistor is the collection utmost point that is connected in this first transistor.
20. low noise amplifier according to claim 18, wherein the substrate of this transistor seconds is the collection utmost point that is connected in this transistor seconds, and the 3rd transistorized substrate is to be connected in the 3rd transistorized collection utmost point.