CN100466428C - Medium power low voltage frequency converter based on insulation grating bipolar transistor - Google Patents
Medium power low voltage frequency converter based on insulation grating bipolar transistor Download PDFInfo
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- CN100466428C CN100466428C CNB2006101696152A CN200610169615A CN100466428C CN 100466428 C CN100466428 C CN 100466428C CN B2006101696152 A CNB2006101696152 A CN B2006101696152A CN 200610169615 A CN200610169615 A CN 200610169615A CN 100466428 C CN100466428 C CN 100466428C
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Abstract
This invention relates to a mid-power low voltage frequency converter based on an insulation grid dual polarity transistor including: a mean-voltage resistor, a DC capacitor, an absorption capacitor, a cascade bus, a cascade bus insulation board, an IGBT power module, an input power terminal, a redtifying diode, an output power terminal, a radiator, a fan, a wheel and a current sensor, which is advantaged that the structure is compact, the volume is small, power density is big and easy to be installed.
Description
Technical field
The invention belongs to the semiconductor switch technical field, a kind of medium power low voltage inverter based on insulated gate bipolar transistor (IGBT) is provided especially, it is applicable in the frequency converter of 210～800KVA power that the frequency converter that is made of this power circuit can be widely used in the transmission field.
Background technology
IGBT is that (Insulated Gate Bipolar Transistor-IGBT), the invention original intention of IGBT is for the drive circuit of simplifying power device and reduces driving power consumption for the abbreviation of gated transistor English name.The sixties in last century transistor and thyristor are all full-fledged as power device.But this bipolarity power device driving power consumption is big and the complicated equipment cost height that makes of circuit.The seventies power MOSFET is studied successfully, and it is the majority carrier device of insulated gate electrode control, the loss of static drive be bordering on zero and also switching speed very fast.But the high tension apparatus on state resistance is bigger, is subjected to the inspiration of MOSFET, and the researcher expects coming the power controlling transistor with the principle of insulated gate electrode, and this just facilitates the invention of IGBT, and this also is the origin of igbt title.Yet IGBT is the integrated morphology of a complexity, and operation principle is more complicated, and one of outstanding behaviours is that its operating frequency can be far above bipolar transistor.IGBT with its input impedance height, switching speed is fast, on state voltage is low, blocking voltage is high, bear characteristics such as electric current is big, has become the main flow device of current power semiconductor development.Since the early 1980s, the phase succeeded in developing, its technology and parameter were updated and are improved, and its unit for electrical property parameters is gradually improved, and the IGBT module is synchronized development on this basis also.And also constantly promoting and development based on the performance parameter of the frequency converter of IGBT.
Summary of the invention
The object of the present invention is to provide a kind of IGBT medium power low voltage inverter, its compact conformation, volume is less, and power density is big, and it is convenient to install, and the assorted living inductance between the circuit is very little, and power output can reach designing requirement fully.
Structure of the present invention as shown in drawings, it comprises: grading resistor 1, dc capacitor 2, absorb electric capacity 3, stacked bus 4, stacked bus insulation plate 5, IGBT power model 6, input power terminal 7, rectifier diode 8, power output terminal 9, radiator 10, blower fan 11, wheel 12 and current sensor 13.Three IGBT power model 6 parallel longitudinals are arranged, the bottom closely is fixed on the radiator 10, grading resistor 1 vertically is arranged in radiator 10 tops, blower fan 11 is fixed on radiator 10 bottoms, dc capacitor 2 serial arrangement are in the right side of radiator, stacked bus 4, stacked bus insulation plate 5 tightly is overlying on serial arrangement on the described dc capacitor on the right side of radiator, stacked bus 4 one ends connect the rectifier diode 8 under the above-mentioned IGBT power model 6, the other end is by absorbing the input that electric capacity 3 is connected IGBT power model 6, the output of IGBT power model 6 passes current sensor 13 connections and is positioned on the power output terminal 9 of the frequency converter back lower place, the input power terminal 7 parallel right sides that are connected rectifier diode, two groups of wheels 12 are equipped with in the bottom of frequency converter, and cabinet can move forward and backward.
Being electrically connected by stacked bus 4 between IGBT power model 6 of the present invention, dc capacitor 2 and the rectifier diode 8 realizes that stacked bus 4 contains 2 layers of connection bus altogether, and two-layer connection bus separates with stacked bus insulation plate 5.
In the medium power low voltage inverter power structure of the present invention, the output of single IGBT power model 6 is by the bus parallel connection.Described radiator 10 is an air-cooled radiator, and bottom of device has wheel, can move forward and backward.
The invention has the advantages that: with devices such as IGBT power model and diode power module being fixed on the air-cooled radiator according to heat radiation requirement and circuit topology rule; effectively reduce device integral body and taken volume; improved the power density of frequency converter; and the modularized design of low voltage frequency converter power circuit structure has made things convenient for work such as the installation, debugging of system; improved operating efficiency, also provide condition simultaneously for maintenance and the maintenance of in minimum downtime, finishing system.Overall construction design has taken into account simultaneously that volume minimizes and the requirement of actual application.Compact conformation, volume is less, and it is convenient to install, and the assorted living inductance between the circuit is very little, and power output can reach designing requirement fully.
Description of drawings
Accompanying drawing is a kind of structural representation of the present invention.Wherein, grading resistor 1, dc capacitor 2, absorption electric capacity 3, stacked bus 4, stacked bus insulation plate 5, IGBT power model 6, input power terminal 7, rectifier diode 8, power output terminal 9 and air-cooled radiator 10, blower fan 11, wheel 12 and current sensor 13.
Embodiment
Accompanying drawing is one embodiment of the present invention.Wherein, stacked bus 4 contains 2 layers of connection bus altogether, and two-layer connection bus separates with stacked bus insulation plate 5.Stacked bus is covered on the dc capacitor 2, and a side is connected with diode (led) module, and opposite side directly is connected with absorption electric capacity 3 usefulness screws with the dc terminal of IGBT power model 6.The lead-out terminal of each IGBT power model is by the bus parallel connection.
Being electrically connected among the present invention between the circuit of each IGBT power device adopts stacked bus to realize, and stacked bus is close on the device, structurally reduced the loop area of connection line, result of the test proves that this design significantly reduces the assorted living inductance of connection line, has improved the power output of power model and even whole frequency converter.
Claims (4)
1. medium power low voltage inverter based on insulated gate bipolar transistor, it is characterized in that, comprising: grading resistor (1), dc capacitor (2), absorption electric capacity (3), stacked bus (4), stacked bus insulation plate (5), IGBT power model (6), input power terminal (7), rectifier diode (8), power output terminal (9), radiator (10), blower fan (11), wheel (12) and current sensor (13); Three IGBT power models (6) parallel longitudinal is arranged, the bottom closely is fixed on the radiator (10), grading resistor (1) vertically is arranged in radiator (10) top, blower fan (11) is fixed on radiator (10) bottom, dc capacitor (2) serial arrangement is in the right side of radiator, stacked bus (4), stacked bus insulation plate (5) tightly is overlying on serial arrangement on the described dc capacitor on the right side of radiator, stacked bus (4) one ends connect the rectifier diode (8) under the above-mentioned IGBT power model (6), the other end is by absorbing the input that electric capacity (3) is connected IGBT power model (6), the output of IGBT power model (6) passes current sensor (13) connection and is positioned on the power output terminal (9) of the frequency converter back lower place, the parallel right side that is connected rectifier diode of input power terminal (7), two groups of wheels (12) are equipped with in the bottom of frequency converter.
2. according to the described frequency converter of claim 1, it is characterized in that: being electrically connected by stacked bus (4) between IGBT power model (6), dc capacitor (2) and the rectifier diode (8) realizes, stacked bus (4) contains 2 layers of connection bus altogether, and two-layer connection bus separates with stacked bus insulation plate (5).
3. according to the described frequency converter of claim 1, it is characterized in that the output of single IGBT power model (6) is by the bus parallel connection.
4. according to the described frequency converter of claim 1, it is characterized in that radiator (10) is an air-cooled radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101696152A CN100466428C (en) | 2006-12-25 | 2006-12-25 | Medium power low voltage frequency converter based on insulation grating bipolar transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101696152A CN100466428C (en) | 2006-12-25 | 2006-12-25 | Medium power low voltage frequency converter based on insulation grating bipolar transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1988338A CN1988338A (en) | 2007-06-27 |
| CN100466428C true CN100466428C (en) | 2009-03-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101696152A Expired - Fee Related CN100466428C (en) | 2006-12-25 | 2006-12-25 | Medium power low voltage frequency converter based on insulation grating bipolar transistor |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053920B2 (en) * | 2007-07-30 | 2011-11-08 | GM Global Technology Operations LLC | Compact terminal assembly for power converters |
| CN101860246A (en) * | 2010-04-16 | 2010-10-13 | 常州佳讯光电产业发展有限公司 | Inversion unit modularization structure device of photovoltaic inverter |
| CN102447260A (en) * | 2011-10-31 | 2012-05-09 | 中国电力科学研究院 | High-voltage reactive power compensation IGBT power cabinet |
| CN104410249B (en) * | 2014-12-12 | 2017-02-22 | 天津电气科学研究院有限公司 | Part arrangement structure for modularized power units |
| CN105939095A (en) * | 2016-06-27 | 2016-09-14 | 武汉中直电气股份有限公司 | Charging device power module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2498743Y (en) * | 2001-08-30 | 2002-07-03 | 北京金自天正智能控制股份有限公司 | Cooling structure for power thyristor converter |
| CN1645725A (en) * | 2005-03-10 | 2005-07-27 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of integrated gate pole |
| CN1645724A (en) * | 2005-03-10 | 2005-07-27 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
-
2006
- 2006-12-25 CN CNB2006101696152A patent/CN100466428C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2498743Y (en) * | 2001-08-30 | 2002-07-03 | 北京金自天正智能控制股份有限公司 | Cooling structure for power thyristor converter |
| CN1645725A (en) * | 2005-03-10 | 2005-07-27 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of integrated gate pole |
| CN1645724A (en) * | 2005-03-10 | 2005-07-27 | 冶金自动化研究设计院 | Commutating crystal brake tube power-phase module of impacted integrated gate pole |
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| CN1988338A (en) | 2007-06-27 |
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