CN100463243C - Push-out light electrode and its production - Google Patents
Push-out light electrode and its production Download PDFInfo
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- CN100463243C CN100463243C CNB2004100480768A CN200410048076A CN100463243C CN 100463243 C CN100463243 C CN 100463243C CN B2004100480768 A CNB2004100480768 A CN B2004100480768A CN 200410048076 A CN200410048076 A CN 200410048076A CN 100463243 C CN100463243 C CN 100463243C
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Abstract
The photo electrode consists of substrate, organic luminescent layer on the substrate, Al layer on the organic luminescent layer, and Au layer on the Al layer. The thin Al/Au layer or LiF/Al/Au laminate layer is used to be as upper electrode of photo electrode. The thin film can be coated by using vacuum deposition process. The transmittance of electrode is about 40-50% higher than Al/Ag layer
Description
Technical field
The present invention relates to liftout optical electroluminescence device and preparation method thereof in the luminescent device field, particularly relate to a kind of liftout optical electrode and preparation method thereof.
Background technology
Organic light emission has progressively possessed the big and efficient advantages of higher of brightness after obtaining important breakthrough in 1987, can satisfy the requirement that the plane shows.At present, common organic electroluminescence device is to be substrate with transparent electro-conductive glass; If with the opaque material is substrate, must adopt the mode that ejects light.The Organic Light Emitting Diode that ejects light has been opened up the frontier of organic luminescent device research and more wide application prospect, for example, when adopting silicon chip to make substrate, can on Si, carry out the organic light-emitting device drive circuit in advance, make organic luminous layer then, prepare liftout optical electrode at last, so just realized that silica-based photoelectricity is integrated.The resolution of silica-based organic display spare, refresh rate and power consumption generally all are better than existing organic luminescent device based on ITO, report, this technology has been applied in the development and production of micro-display device.
For the luminous organic luminescent device in top, the selectable material of top electrode is many, but finally must try to achieve balance between light transmittance and conductivity.Adopt at present more have ITO and thin Al/Ag or LiF/Al/Ag composite bed (Al often is the nm magnitude), still, the former has very high requirement because deposit ITO is easy to damage organic luminous layer for equipment and technology; And latter's light transmittance is lower, and stability is also relatively poor.
Summary of the invention
The purpose of this invention is to provide a kind of light transmittance height, liftout optical electrode that chemical stability is good and preparation method thereof.
Liftout optical electrode provided by the present invention comprises substrate and is positioned at organic luminous layer on the substrate, it is characterized in that: also have the Al layer on the described organic luminous layer and be positioned at Au layer on the Al layer.
The aluminium lamination of described liftout optical electrode should be according to the process conditions of preparation, adjust thickness as vacuum degree and used purity of raw materials, generally between 0.6-15.0nm, Al layer thickness 0.6nm at least is to be metal than low work function for what guarantee to contact with organic luminous layer; For the electrical stability that improves described top electrode and the working life of entire device, the gold layer of described top electrode should be between 3.0-20.0nm; For guaranteeing higher light transmittance and lower square resistance, should be controlled at the gross thickness of Au/Al composite membrane about 20nm.
Inject electronic capability in order to improve electrode, improve luminous efficiency, often add one deck electron injecting layer LiF layer between Al layer and the organic luminous layer, its thickness is at 0.1-1.0nm.
Electrode substrate can be Si substrate, sheet metal, ito glass etc., and its organic luminous layer can be existing any structure, and NPB (50nm) commonly used/AlQ (50nm) can prepare according to a conventional method.
Can add the masterplate of any figure at above-mentioned top electrode as required in use.
The preparation method of described liftout optical electrode comprises the steps: 1) on substrate, prepare organic luminous layer; 2) plated metal aluminium on described organic luminous layer; 3) plated metal gold on described metal aluminium lamination.
When depositing Al layer and Au layer, the vacuum degree of sample room is 10
-5More than the holder, device therefor can be vacuum evaporation apparatus, observing and controlling sputtering equipment, electronics (ion) beam evaporation, Solid State Source molecular beam epitaxial device etc.
Liftout optical electrode structural representation of the present invention as shown in Figure 1, wherein A is the electrode structure schematic diagram that contains the Al/Au layer, B is the electrode structure schematic diagram that contains LiF/Al/Au, 1 is the Au layer among the figure; 2 is the Al layer; 3 is organic luminous layer; 4 is substrate; 5 is the LiF layer.
The present invention can take into account key elements such as light transmittance, stability and low cost with approaching Al/Au layer or LiF/Al/Au composite bed as the upper electrode material of liftout optical electrode.This thin layer can be with common vacuum deposition method (10
-5Holder) finishes, the electrode transmits light rate is than the about 40-50% of thin Al/Ag floor height, and outer field Au film unlike the Ag film, be easy to oxidized, thereby better guaranteed the electrical stability and the stability of photoluminescence of device, have again simultaneously to prevent that preferably steam from penetrating the effect of organic layer.Liftout optical electrode of the present invention is at inorganic thin film and semiconductor light emitting, and there is extensive use aspects such as photoelectric device and photo-detector.
Description of drawings
Fig. 1 is the structural representation of liftout optical electrode
Embodiment
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, AM aluminum metallization and gold successively, thickness are respectively 1.0 and 19.0nm, and this is top electrode (negative electrode).Require vacuum degree 10
-7More than the holder, material purity is more than 99.99%, and used substrate is the Si substrate, and its organic luminous layer is NPB (50nm)/AlQ (50nm), according to a conventional method preparation.This moment, light transmittance determined that by the light transmittance of gold layer average transmittance is about 40%, at 520nm higher light transmittance is arranged in the past.This scheme more is applicable to the short-wave long light-emitting device.
Embodiment 2, preparation have the liftout optical electrode of Al/Au layer
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, AM aluminum metallization and gold successively, thickness are respectively 0.6 and 15.0nm.Require vacuum degree 10
-6More than the holder, material purity is more than 99.99%, and the electrode used therein substrate is a sheet metal, and its organic luminous layer is NPB (50nm)/AlQ (50nm), according to a conventional method preparation.This moment, light transmittance determined jointly that by gold layer and aluminium lamination average transmittance is about 30%, and electric conductivity is stable.
Embodiment 3, preparation have the liftout optical electrode of LiF/Al/Au layer
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation LiF, aluminium and gold successively, thickness are respectively 0.1,15.0 and 3.0nm.Vacuum degree requires 10
-5More than the holder, material purity is all more than 99.99%, and the electrode used therein substrate is an ito glass, its organic luminous layer NPB (50nm)/AlQ (50nm), preparation according to a conventional method.This moment, light transmittance mainly determined that by aluminium lamination average transmittance is about 10%, and electric conductivity is stable.
Use the vacuum thermal evaporation filming equipment, behind deposit organic luminous layer on the substrate, evaporation LiF, aluminium and gold successively, thickness are respectively 1.0,12.0 and 6.0nm.Vacuum degree requires 10
-5More than the holder, material purity is all more than 99.99%, and the electrode used therein substrate is the Si substrate, and its organic luminous layer is NPB (50nm)/AlQ (50nm), according to a conventional method preparation.This moment, light transmittance mainly determined that by aluminium lamination average transmittance is about 10%, and electric conductivity is stable.
Claims (5)
1. liftout optical electrode, comprise substrate and the organic luminous layer that is positioned on the substrate, it is characterized in that: described organic luminous layer is provided with the LiF layer, and described LiF layer is provided with the Al layer that thickness is 0.6-15nm, and being provided with thickness on described Al layer is the Au layer of 3-20nm.
2. liftout optical electrode according to claim 1 is characterized in that: described LiF layer thickness is 0.1-1nm.
3. liftout optical electrode according to claim 1 and 2 is characterized in that: the gross thickness of described Al layer and Au layer is not more than 20nm.
4. prepare the method for the described liftout optical electrode of claim 1, comprise the steps: 1) on substrate, prepare organic luminous layer; 2) deposition LiF layer on organic luminous layer; 3) deposit thickness is the metallic aluminium of 0.6-15nm on described LiF layer; 4) deposit thickness is the metallic gold of 3-20nm on described metal aluminium lamination.
5. preparation method according to claim 4 is characterized in that: the thickness of described LiF layer is 0.1-1nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100480768A CN100463243C (en) | 2004-06-14 | 2004-06-14 | Push-out light electrode and its production |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100480768A CN100463243C (en) | 2004-06-14 | 2004-06-14 | Push-out light electrode and its production |
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| Publication Number | Publication Date |
|---|---|
| CN1713408A CN1713408A (en) | 2005-12-28 |
| CN100463243C true CN100463243C (en) | 2009-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100480768A Expired - Fee Related CN100463243C (en) | 2004-06-14 | 2004-06-14 | Push-out light electrode and its production |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001196574A (en) * | 2000-01-11 | 2001-07-19 | Furukawa Electric Co Ltd:The | Forming method of electrode on n-type gallium nitride compound semiconductor layer |
| CN1330416A (en) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | Semiconductor light-emitting component and its manufacturing mehtod and semiconductor luminescent device |
| US6734622B1 (en) * | 1999-03-24 | 2004-05-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Organic electroluminescent component for an organic light-emitting diode |
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2004
- 2004-06-14 CN CNB2004100480768A patent/CN100463243C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6734622B1 (en) * | 1999-03-24 | 2004-05-11 | Osram Opto Semiconductors Gmbh & Co. Ohg | Organic electroluminescent component for an organic light-emitting diode |
| JP2001196574A (en) * | 2000-01-11 | 2001-07-19 | Furukawa Electric Co Ltd:The | Forming method of electrode on n-type gallium nitride compound semiconductor layer |
| CN1330416A (en) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | Semiconductor light-emitting component and its manufacturing mehtod and semiconductor luminescent device |
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| CN1713408A (en) | 2005-12-28 |
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Granted publication date: 20090218 Termination date: 20120614 |