CN100460895C - Infrared cut-off light filtering films on germanium-base parts surface and plating method thereof - Google Patents
Infrared cut-off light filtering films on germanium-base parts surface and plating method thereof Download PDFInfo
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- CN100460895C CN100460895C CNB2007101235822A CN200710123582A CN100460895C CN 100460895 C CN100460895 C CN 100460895C CN B2007101235822 A CNB2007101235822 A CN B2007101235822A CN 200710123582 A CN200710123582 A CN 200710123582A CN 100460895 C CN100460895 C CN 100460895C
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Abstract
The invention relates to optical thin film manufacturing technique used in infrared germanium substrate parts cutting light filter plating. Its feature is that the film has high reflectivity in 3.5mum-4.8mum wave band range, high transmittance in 7.5mum-11mum wave band range. The adopted optical parts can be used in infrared double light paths optical system , which can divide the light with two wave bands, increase infrared optical instrument performance, and reduce its weight and volume.
Description
Technical field
The invention belongs to the optical thin film manufacturing technology, relate to a kind of infrared cut-off light filtering films film system and plating method thereof of germanium substrate piece surface.
Background technology
Infrared cut-off light filtering films is applied to have the optical system of the double light path unification of specific anti-espionage requirement, owing to can select for use infrared coating materials kind few, every tunic is all thicker, and the firmness of rete, optical characteristics require high, and technology difficulty is big.Do not find the report or the data that are coated with infrared cut-off light filtering films of the present invention.
Summary of the invention
The objective of the invention is: infrared cut-off light filtering films film system and plating method thereof that the firm a kind of germanium substrate piece surface of a kind of rete is provided.
Technical scheme of the present invention is: this film system is made up of 13 tunics from the inside to surface, and its odd-level coating materials is a zinc sulphide, and the even level coating materials is a germanium; The optical thickness of every tunic is:
| Sequence number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
| The optical thickness of rete (nm) | 552 | 1001 | 1121 | 910 | 923 | 1173 | 956 | 682 | 1224 | 954 | 702 | 1986 | 2313 |
Device therefor need dispose E type electron beam evaporation source, thermoelectric group evaporation source, quartz crystal control assembly, ion beam-assisted device, heated baking device;
Processing step is as follows:
(1) cleaning is used ultrasound wave and/or detersive that germanium substrate part coated surface is carried out cleaning by the plating part.
(2) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, be evacuated down to 1 * 10
-2During Pa, heating substrate to 120 ℃～180 ℃, temperature retention time 1～2 hour.
(3) be coated with the ZnS film, the ZnS coating materials is placed in the thermoelectric group evaporation boat and carries out evaporation, and vacuum tightness is 5 * 10 during evaporation
-3Pa～1 * 10
-3Pa, evaporation rate is 0.7nm/S～1nm/S, and thicknesses of layers is by the control of quartz crystal controller, and its geometric thickness is 473～483nm.
(4) be coated with the Ge film, the Ge coating materials is placed in the crucible of rotatable electron gun evaporation source and carries out evaporation by electron beam, and vacuum tightness is 5 * 10 during evaporation
-3Pa～2 * 10
-3Pa, evaporation rate is 0.4nm/S～0.6nm/S, and thicknesses of layers is by the control of quartz crystal controller, and its geometric thickness is 382～390nm.
(5) repeating step (3) and (4) alternately are coated with other all retes.The used coating materials of all odd number retes in 1～13 tunic, technological parameter are identical with step (3); The used coating materials of all even number retes, technological parameter are identical with step (4).
(6) optical element that has been coated with film system is taken out in the cooling back.
Advantage of the present invention
The present invention has following advantage: adopt film system of the present invention and plating method, its
● rejection zone reflectivity height, 〉=99%;
● rete transmission band transmissison characteristic is good, and 〉=96%;
● the drift of rete centre wavelength is very little ,≤5nm;
● the rete firmness is good, is better than the requirement of GB regulation.
Embodiment
Below the present invention is described in further details.Rete of the present invention is 13 layers of non-regular thin film structure that two kinds of coating materials are formed.This film system is made up of 13 tunics from the inside to surface, uses two kinds of coating materials, and all odd-level coating materials are zinc sulphide, and all even level coating materials are germanium; All even level coating materials of 1～13 tunic, technological parameter are all identical, and all odd-level coating materials, technological parameter are all identical.The optical thickness of every tunic sees Table 1.
Table 1: film is the optical thickness value table of every tunic
| Sequence number | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 |
| The optical thickness of rete (nm) | 552 | 1001 | 1121 | 910 | 923 | 1173 | 956 | 682 | 1224 | 954 | 702 | 1986 | 2313 |
Be coated with rete to equipment configratioin requirement:
Device therefor need dispose E type electron beam evaporation source, thermoelectric group evaporation source, quartz crystal control assembly, ion beam-assisted device, heated baking device.The APS1104 high vacuum coating equipment that for example can use German Leybold company to produce.
The processing step that is coated with rete is as follows:
(1) cleaning is used ultrasound wave and/or detersive that cleaning is carried out in the substrate of plated film on the optical element by the plating part.
(2) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, be evacuated down to 1 * 10
-2During Pa, heating substrate to 120 ℃～180 ℃, temperature retention time 1～2 hour.
(3) be coated with the ZnS film, the ZnS coating materials is placed in the thermoelectric group evaporation boat and carries out evaporation, and vacuum tightness is 5 * 10 during evaporation
-3Pa～1 * 10
-3Pa, evaporation rate is 0.8nm/S～1nm/S, and thicknesses of layers is by the control of quartz crystal controller, and geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.86, and one-tenth-value thickness 1/10 is 475nm.
(4) be coated with the Ge film, the Ge coating materials is placed in the crucible of rotatable electron gun evaporation source and carries out evaporation by electron beam, and vacuum tightness is 5 * 10 during evaporation
-3Pa～2 * 10
-3Pa, evaporation rate is 0.4nm/S～0.6nm/S, and thicknesses of layers is by the control of quartz crystal controller, and geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.385, and one-tenth-value thickness 1/10 is 386nm.
(5) repeating step (3) and (4) alternately are coated with other all retes.The used coating materials of all odd number retes in 1～13 tunic, technological parameter are identical with (3), and the geometric thickness of rete is that the optical thickness of corresponding layer in the table 1 is on duty with coefficient 0.86; The used coating materials of all even number retes, technological parameter are with identical with (4), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.385.
(6) optical element that has been coated with film system is taken out in the cooling back.
Embodiment 1
Adopt the optical thickness of film structure of the present invention and table 1, the technological process of plated film is as follows:
(1) prepare: cleaning clamp, replacing crystal control strip, zinc sulphide and germanium coating materials are respectively charged in fixing evaporation boat and the crucible, debugging plated film program.
(2) cleaning is plated part: dip in alcohol ether mixed liquor cleaning piece surface with degreasing cloth earlier, ultrasonic cleaning is carried out the stifling and vacuum chamber of packing into of isopropyl alcohol at last then.
(3) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, and starting outfit is evacuated down to 1 * 10
-2During Pa, heating base reservoir temperature to 150 ℃, temperature retention time 1 hour.
(4) be coated with the ZnS film, vacuum tightness 1.5 * 10 during evaporation
-3Pa, evaporation rate 0.9m/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.86, one-tenth-value thickness 1/10 is 475nm, anchor clamps rotating speed 30%;
(5) be coated with the Ge film, vacuum tightness 3 * 10 during evaporation
-3Pa, evaporation rate 0.5nm/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.385, anchor clamps rotating speed 30%;
(6) repeating step (4) and (5) alternately are coated with other all retes.The used coating materials of all odd number retes in 1～13 tunic, technological parameter are identical with (4), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.86; The used coating materials of all even number retes, technological parameter are with identical with (5), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.385, and whole retes of film system use the geometric thickness of same crystal wafer control rete;
(7) optical element that has been coated with film system is taken out in the cooling back.
Embodiment 2
Adopt the optical thickness of film structure of the present invention and table 1, the technological process of plated film is as follows:
(1) prepare: cleaning clamp, zinc sulphide and germanium coating materials are respectively charged in fixing evaporation boat and the crucible, debugging plated film program.
(2) cleaning is plated part: dip in alcohol ether mixed liquor cleaning piece surface with degreasing cloth earlier, ultrasonic cleaning is carried out the stifling and vacuum chamber of packing into of isopropyl alcohol at last then.
(3) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, and starting outfit is evacuated down to 1 * 10
-2During Pa, heating base reservoir temperature to 170 ℃, temperature retention time 2 hours.
(4) be coated with the ZnS film, vacuum tightness 2.8 * 10 during evaporation
-3Pa, evaporation rate 1.0m/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.84, one-tenth-value thickness 1/10 is 464nm, anchor clamps rotating speed 40%;
(5) be coated with the Ge film, vacuum tightness 3.6 * 10 during evaporation
-3Pa, evaporation rate 0.4nm/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.375, one-tenth-value thickness 1/10 is 376nm, anchor clamps rotating speed 40%;
(6) repeating step (4) and (5) alternately are coated with other all retes.The used coating materials of all odd number retes in 1～13 tunic, technological parameter are identical with (4), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.84; The used coating materials of all even number retes, technological parameter are identical with (5), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.375, and whole retes of film system use the geometric thickness of same crystal wafer control rete;
(7) optical element that has been coated with film system is taken out in the cooling back.
Embodiment 3
Adopt the optical thickness of film structure of the present invention and table 1, the technological process of plated film is as follows:
(1) prepare: cleaning clamp, zinc sulphide and germanium coating materials are respectively charged in fixing evaporation boat and the crucible, debugging plated film program.
(2) cleaning is plated part: dip in alcohol ether mixed liquor cleaning piece surface with degreasing cloth earlier, ultrasonic cleaning is carried out the stifling and vacuum chamber of packing into of isopropyl alcohol at last then.
(3) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, and starting outfit is evacuated down to 2 * 10
-2During Pa, heating base reservoir temperature to 130 ℃, temperature retention time 2 hours.
(4) be coated with the ZnS film, vacuum tightness 1.6 * 10 during evaporation
-3Pa, evaporation rate 0.85/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.85, one-tenth-value thickness 1/10 is 470nm, anchor clamps rotating speed 25%;
(5) be coated with the Ge film, vacuum tightness 3.8 * 10 during evaporation
-3Pa, evaporation rate 0.55nm/S, crystal control strip control rete geometric thickness, geometric thickness is that the optical thickness in the table 1 is on duty with coefficient 0.38, one-tenth-value thickness 1/10 is 381nm, anchor clamps rotating speed 25%;
(6) repeating step (4) and (5) alternately are coated with other all retes.The used coating materials of all odd number retes in 1～13 tunic, technological parameter are identical with (4), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.85; The used coating materials of all even number retes, technological parameter are with identical with (5), and the geometric thickness of rete is that the optical thickness of respective layer in the table 1 is on duty with coefficient 0.38, and whole retes of film system use the geometric thickness of same crystal wafer control rete;
(7) optical element that has been coated with film system is taken out in the cooling back.
Be coated with the related characteristics of rete three times
Every characteristic index of the rete that is coated with for three times all meets the demands, and specific targets are as follows:
Claims (2)
1. the infrared cut-off light filtering films film of germanium substrate piece surface system is characterized in that, this film system is made up of 13 tunics from the inside to surface, and its odd-level coating materials is a zinc sulphide, and the even level coating materials is a germanium; The optical thickness of every tunic is:
。
2. method that is coated with the system of infrared cut-off light filtering films film according to claim 1 at the germanium substrate surface, it is characterized in that device therefor need dispose E type electron beam evaporation source, thermoelectric group evaporation source, quartz crystal control assembly, ion beam-assisted device, heated baking device;
Processing step is as follows:
(1) cleaning is used ultrasound wave and/or detersive that germanium substrate part coated surface is carried out cleaning by the plating part;
(2) baking substrate will be clamped in by the plating part and put into high vacuum coating equipment on the anchor clamps, be evacuated down to 1 * 10
-2During Pa, heating substrate to 120 ℃～180 ℃, temperature retention time 1～2 hour;
(3) be coated with the ZnS film, the ZnS coating materials is placed in the thermoelectric group evaporation boat and carries out evaporation, and vacuum tightness is 5 * 10 during evaporation
-3Pa～1 * 10
-3Pa, evaporation rate is 0.8nm/S～1nm/S, and thicknesses of layers is by the control of quartz crystal controller, and the geometric thickness value of rete is on duty with coefficient 0.86 by the optical thickness of sequence number 1 corresponding rete in claim 1 table, and promptly the geometric thickness value is 475nm;
(4) be coated with the Ge film, the Ge coating materials is placed in the crucible of rotatable electron gun evaporation source and carries out evaporation by electron beam, and vacuum tightness is 5 * 10 during evaporation
-3Pa～2 * 10
-3Pa, evaporation rate is 0.4nm/S～0.6nm/S, and thicknesses of layers is by the control of quartz crystal controller, and the geometric thickness value of rete is on duty with coefficient 0.385 by the optical thickness of sequence number 2 corresponding retes in claim 1 table, and promptly the geometric thickness value is 386nm;
(5) repeating step (3) and (4), alternately be coated with other all retes, the used coating materials of all odd number retes in 3～13 tunics, technological parameter are identical with step (3), and the geometric thickness of rete is that the optical thickness of its institute's respective layer in claim 1 table is on duty with coefficient 0.86; The used coating materials of all even number retes, technological parameter are identical with step (4), and the geometric thickness of rete is that the optical thickness of its institute's respective layer in claim 1 table is on duty with coefficient 0.385;
(6) optical element that has been coated with film system is taken out in the cooling back.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007101235822A CN100460895C (en) | 2007-07-04 | 2007-07-04 | Infrared cut-off light filtering films on germanium-base parts surface and plating method thereof |
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|---|---|---|---|
| CNB2007101235822A CN100460895C (en) | 2007-07-04 | 2007-07-04 | Infrared cut-off light filtering films on germanium-base parts surface and plating method thereof |
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| CN100460895C true CN100460895C (en) | 2009-02-11 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101620280B (en) * | 2009-06-30 | 2011-01-26 | 中国航空工业集团公司洛阳电光设备研究所 | Film system of infrared double-waveband antireflection film system and plating method thereof |
| CN101738652B (en) * | 2009-12-15 | 2011-07-20 | 西南技术物理研究所 | Method for preparing ultrawide wave band high antireflection film combining three lights |
| CN101863152B (en) * | 2010-05-07 | 2012-04-25 | 中国人民解放军63983部队 | Infrared radiation inhibiting material with nano periodic structure and method for preparing same |
| CN101900848B (en) * | 2010-07-27 | 2012-01-25 | 中国航空工业集团公司洛阳电光设备研究所 | Resin base narrow-band negative film filter system, optical filter and preparation method thereof |
| CN102368097B (en) * | 2011-09-29 | 2014-07-23 | 中国航空工业集团公司洛阳电光设备研究所 | Dim light and laser transmission and medium-infrared reflection film and prism, preparation method of prism |
| CN105137514B (en) * | 2015-09-11 | 2017-07-28 | 兰州空间技术物理研究所 | 4.2~4.45 μm pass through medium-wave infrared optical filter and preparation method |
| CN109103088B (en) * | 2018-08-30 | 2020-09-01 | 成都海威华芯科技有限公司 | Evaporation method for ohmic contact metal germanium and application thereof |
| CN111045118A (en) * | 2019-12-26 | 2020-04-21 | 兰州空间技术物理研究所 | Damp-heat-resistant infrared high-reflection photonic crystal film and preparation method thereof |
| CN114199382A (en) * | 2021-12-15 | 2022-03-18 | 武汉高德智感科技有限公司 | Infrared temperature measurement lens and temperature measurement method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828708A (en) * | 1981-08-12 | 1983-02-19 | Tokyo Optical Co Ltd | Long pass filter |
| JPH06230202A (en) * | 1993-02-04 | 1994-08-19 | Matsushita Electric Ind Co Ltd | Formation of thin film |
| JPH08334603A (en) * | 1995-06-08 | 1996-12-17 | Mitsubishi Electric Corp | Optical film and optical element for infrared region |
| JP2006153976A (en) * | 2004-11-25 | 2006-06-15 | Nippon Shinku Kogaku Kk | Infra-red light transmission filter |
-
2007
- 2007-07-04 CN CNB2007101235822A patent/CN100460895C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5828708A (en) * | 1981-08-12 | 1983-02-19 | Tokyo Optical Co Ltd | Long pass filter |
| JPH06230202A (en) * | 1993-02-04 | 1994-08-19 | Matsushita Electric Ind Co Ltd | Formation of thin film |
| JPH08334603A (en) * | 1995-06-08 | 1996-12-17 | Mitsubishi Electric Corp | Optical film and optical element for infrared region |
| JP2006153976A (en) * | 2004-11-25 | 2006-06-15 | Nippon Shinku Kogaku Kk | Infra-red light transmission filter |
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