CN100459101C - Display panel and its prdoucing method - Google Patents
Display panel and its prdoucing method Download PDFInfo
- Publication number
- CN100459101C CN100459101C CNB2004100713221A CN200410071322A CN100459101C CN 100459101 C CN100459101 C CN 100459101C CN B2004100713221 A CNB2004100713221 A CN B2004100713221A CN 200410071322 A CN200410071322 A CN 200410071322A CN 100459101 C CN100459101 C CN 100459101C
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- capacitor
- substrate
- display pixel
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a display image element with higher open ratio and prodn. method. The prodn method includes following steps: providing a base board, forming a transistor and a capacitor on section around the base board, the capacitor consists of first conductive layer, a dielectric layer and second conductive layer which are stacked on the base board and have rough surface, and forming an organic LED on a section of the base board around the transistor, a positive pole of said LED is electric connected to the transistor.
Description
Technical field
The present invention relates to a kind of display pixel structure of electro photo-luminescent apparatus, particularly relate to a kind of Organic Light Emitting Diode (organic light-emitting diode, OLED) display pixel structure of display unit and manufacture method thereof, it has than high aperture (aperture ratio).
Background technology
In current plane panel technology, Organic Light Emitting Diode (Organic Light EmittingDiode abbreviates OLED as) display has advantages such as self-luminous, wide viewing angle, slimming, lightweight, low driving voltage and manufacturing process are simple.In OLED display, adopt organic light emission compound as dyestuff, polymer or other luminescent material to be arranged between negative electrode and the anode as organic luminous layer and with it with stepped construction.And according to its type of drive, organic light emitting diode display then can be distinguished into active matrix drive-type (active matrix) and driving two kinds of passive-matrix.
Active matrix drive-type organic light emitting diode display (hereinafter to be referred as AM-OLED) is by current drives, at least need a thin-film transistor (thin film transistor in its each pixel region, be designated hereinafter simply as TFT) with as switch, and the size of regulating drive current according to the difference of electric capacity stored voltage, so that the brightness and the GTG degree of control pixel.Generally speaking, drive by two TFT in each pixel region of current AM-OLED, or by four TFT to drive it.
As shown in Figure 1, shown the schematic diagram of disclosed a kind of existing AM-OLED in the 6th, 492, No. 778 patents of the U.S., (thin film transistor TFT) drives it by two thin-film transistors in its each pixel region.Wherein, display pixel 10 has comprised two independently thin film transistor region T1 and T2, capacitor area C and Organic Light Emitting Diode (organic light-emitting diode is hereinafter to be referred as OLED) districts 11.Have a transistor (not label) that is linked to scan line 12 in thin film transistor region T1, its source/drain then links data wire 14 and capacitor area C by suitable contact structures (not shown) respectively.And in thin film transistor region T2, another thin-film transistor (not label) then links capacitor area C, OLED district 11 and source electrode line 16 by suitable contact structures.And for the purpose of the simplicity of illustration, in these shows in detail contact structures therebetween not.
Please refer to Fig. 2, shown, it typically is a storehouse type capacitor (stacked capacitor) along the section situation of the capacitor arrangement in the capacitor area C of line segment A-A ' in Fig. 1.Above-mentioned stack capacitor device comprises one first conductive layer 22, a capacitor layers 24 and one second conductive layer 26 that is stacked in regular turn on the substrate 20.So the stack capacitor device accounts for the set area of each display pixel 10 nearly 1/3, so that provide during picture element scan OLED district 11 enough and continuous electric current.Yet, since capacitor area C to account for each elemental area excessive, therefore just significantly lowered the aperture opening ratio of being contributed by OLED district 11.
So, just, need a kind of formation to have the display pixel and the manufacture method thereof of preferred aperture opening ratio.
Summary of the invention
In view of this, main purpose of the present invention just provides a kind of display pixel and manufacture method thereof that has than high aperture.So, effectively improve aperture ratio of pixels by the size that reduces capacitor area in each pixel.Capacitor sizes dwindle by form coarse capacitor (rugged capacitor) with and/or in capacitor, adopt and have high-k dielectric materials and reached.
A kind of display pixel is provided in the present invention, it has than high aperture, comprise: a capacitor and an Organic Light Emitting Diode, be arranged on the substrate, wherein this Organic Light Emitting Diode comprises one the 4th conductive layer, and above-mentioned capacitor comprises and is stacked over one first conductive layer, a dielectric layer and one second conductive layer that has rough surface on the substrate and respectively; One transistor is formed on the aforesaid substrate with electrically connect capacitor and Organic Light Emitting Diode, and wherein this transistor has one the 3rd conductive layer; An and insulating barrier, place on this transistor and this capacitor and cover on part the 4th conductive layer of this Organic Light Emitting Diode of marginal portion of the 3rd conductive layer, wherein the 3rd conductive layer forms this transistorized source/drain contact, and the marginal portion of the 4th conductive layer and the 3rd conductive layer overlaps and extends to the substrate remainder.
Moreover, the invention provides a kind of manufacture method of display pixel, comprise the following steps: to provide a substrate; Form a transistor and a coarse capacitor (ruggedcapacitor) in the adjacent portion of aforesaid substrate simultaneously, wherein coarse capacitor comprises and is stacked over one first conductive layer, a dielectric layer and one second conductive layer that has rough surface on this substrate respectively; Form three conductive layer of one the 4th conductive layer with a part in the covering transistor; And form an insulating barrier and cover the 4th conductive layer of this transistor and this rough type capacitor and a part to form an Organic Light Emitting Diode on contiguous above-mentioned transistorized a part of substrate, wherein an anode of this Organic Light Emitting Diode electrically contacts above-mentioned transistor, wherein the 3rd conductive layer forms this transistorized source/drain contact, and the marginal portion of the 4th conductive layer and the 3rd conductive layer overlaps and extends to the substrate remainder.
In one embodiment of the invention, the rough surface in the capacitor area forms by etching one resilient coating.
In another embodiment of the present invention, the rough surface in the capacitor area can be reached by the hemispherical structure of extra formation in capacitor.
Display pixel of the present invention has preferred aperture opening ratio and energy consumption.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborates.
Description of drawings
Fig. 1 looks schematic diagram on one, in order to show pixel region of the prior art;
Fig. 2 is a profile, has shown along the structure of existing storehouse type capacitor among Fig. 1 line segment A-A ';
Fig. 3 looks schematic diagram on one, in order to show the display pixel among the present invention;
Fig. 4 a～4d is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of one embodiment of the invention, along the section situation of A-A ' line segment among Fig. 3;
Fig. 5 a～5d is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of another embodiment of the present invention, along the section situation of B-B ' line segment among Fig. 3;
Fig. 6 a～6b is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of another embodiment of the present invention, along the section situation of A-A ' line segment among Fig. 3;
Fig. 7 a～7b is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of another embodiment of the present invention, along the section situation of B-B ' line segment among Fig. 3;
Fig. 8 a～8b is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of another embodiment of the present invention, along the section situation of A-A ' line segment among Fig. 3;
Fig. 9 a～9b is a series of schematic diagrames, in order to show the manufacture method according to the display pixel of another embodiment of the present invention, along the section situation of B-B ' line segment among Fig. 3.
The simple symbol explanation
T1, T2, T1 ', T2 '～thin film transistor region;
C, C '～capacitor area:
11,101～Organic Light Emitting Diode district;
10～pixel region; 12～scan line;
14～data wire; 16～source electrode line;
20,200～substrate; 22～the first conductive layers;
24～dielectric layer; 26～the second conductive layers;
202～resilient coating;
204a, 204b, 204a ', 204b '～first conductive layer;
204c～channel region; 204d～source/drain regions
205～protrusion; 206a, 206b～dielectric layer;
206a ', 206b '～dielectric layer with high dielectric constant;
208a, 208b～second conductive layer; 210～transistor;
212～coarse capacitor; 214～insulating barrier;
215～contact hole; 216～the 3rd conductive layers;
218～the 4th conductive layers; 220～insulating barrier;
222～organic luminous layer; 224～cathodic metal layer;
226～Organic Light Emitting Diode.
Embodiment
Please refer to Fig. 3, for looking schematic diagram on the AM-OLED with pel array of foundation one embodiment of the invention.As shown in Figure 3, biseptate thin film transistor region T1 ' and T2 ', capacitor area C ' and OLED district 101 in each display pixel 100, have been comprised.In thin film transistor region T1 ' then by a transistor that is linked to scan line 102 (not label) with the voltage of storage application in another thin film transistor region T2 ', its source/drain then is linked to data wire 104 and capacitor area C ' respectively by suitable contact structures (not shown).In thin film transistor region T2 ', another transistor (not label) then by suitable contact structures linking capacitor area C ' and OLED district 101, and be connected in source electrode line 106.At this, for the purpose of simplicity of illustration, these a little contact structures of shows in detail in graphic not.Thin-film transistor in thin film transistor region T2 ' then when picture element scan as switch in order to the supply continuous current to OLED district 101.
As shown in Figure 3, in the present invention, just can therefore decrease in the required surface area of manufacturing capacitor by the specific capacitance (unitcapacitance) that promotes among the capacitor area C '.So, because the minimizing of capacitor area C ' area occupied, and then provide additional areas to be used for the manufacturing of the electro photo-luminescent apparatus in the OLED district 101.Therefore, just can produce OLED district 101 and significantly promote aperture opening ratio in each display pixel 100 with big light-emitting zone.
Of the present invention have the capacitor area C of preferred unit electric capacity and have larger area OLED district 101 ' and can form simultaneously with thin film transistor region T2 ', and will its manufacturing process be described by the following example.
First embodiment:
Fig. 4 a～4d and Fig. 5 a～5d illustrate the manufacture method than the high aperture display pixel of having according to one embodiment of the invention respectively, its shown respectively in the manufacturing process along in the capacitor area C ' of Fig. 3 middle conductor A～A ' with the OLED district 101 and the interior section situation of thin film transistor region T2 ' of line segment B～B '.
Please refer to Fig. 4 a and Fig. 5 a, the substrate 200 as quartz glass, non-alkali glass or its analog material at first is provided.Then on substrate 200, form resilient coating 202, for example composite film for forming by insulating material such as oxide and nitride.
Then, by the use of patterning photomask and as the execution of the suitable etching step of wet etching, with the resilient coating 202 in the selective etch capacitor area C ', so that form coarse (rugged) resilient coating 202a in the capacitor area C ', its surface is uneven can provide big surf zone than other shown in Fig. 5 a smooth resilient coating 202.Preferably, the surface of coarse resilient coating 202a can be slynessization surface (rounded surface) so that bigger surf zone to be provided.
Please refer to Fig. 4 b and Fig. 5 b, then conformably form one first conductive layer on substrate 200, for example is through doped polycrystalline silicon layer.And after the execution (not shown) of a patterning step, stay the first conductive layer 204a on the coarse resilient coating 202a in capacitor area C ', and in thin-film transistor and OLED district, form the first conductive layer 204b with on the resilient coating 202 that is covered in a part.At this, the first conductive layer 204a in capacitor area C ' also shows a hackly surface.
Then, conformably forming a dielectric layer on substrate 200, for example is oxide skin(coating), nitride layer or even high-k dielectric materials layer.High-k dielectric materials layer institute materials used for example is tantalum pentoxide (Ta
2O
5), barium strontium titanate (BST), lead zirconate titanate (PZT) or its homologue.Then after the execution of a patterning step, go up the dielectric layer 206a that formation has rough surface, and on the first conductive layer 204b and its contiguous resilient coating 202, form a dielectric layer 206b in the first conductive layer 204a.
Then, compliance ground forms the resilient coating 202 of one second conductive layer to cover dielectric layer 206a, 206b and to expose on substrate 200.Second conductive layer for example material is the metal level of tungsten or tantalum.And after suitable patterning step, form the second conductive layer 208a, 208b respectively at last the going up of the dielectric layer 206b of a part with whole dielectric layer 206a.Then, the execution of injecting by source/drain ion, and adopt the second conductive layer 208b to mix suitable impurity as an ion injecting mask in being not in the first conductive layer 204b that covered of the second conductive layer 208b.So be convenient to form in the first conductive layer 204b channel region 204c and source/drain regions 204d.So, be convenient to form transistor 210 and capacitor 212 in the zones of different of substrate 200.Capacitor 212 can increase its interior specific capacitance because of having hackly surface, thereby can reduce the shared size of capacitor area C '.
Please refer to Fig. 4 c and Fig. 5 c, then on substrate 200, form insulating barrier 214 with covering transistor 210.At this, insulating barrier 214 for example is an oxide skin(coating).And follow patterned insulation layer 214, in insulating barrier 214, to have formed contact hole 215 with respect to the source/drain position.Then, the both sides respectively at transistor 210 contact to form source/drain with follow-up formation element with contact hole 215 interior the 3rd conductive layers 216 that form.
Please refer to Fig. 4 d and Fig. 5 d, then on substrate 200, form three conductive layer 216 of one the 4th conductive layer 218 with a part in the covering transistor 210.The material of the 4th conductive layer 218 for example is indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or its homologue.Then on substrate 200, form four conductive layer 218 of another insulating barrier 220 with the smooth property covered ground covering capacitor 212, transistor 210 and a part.Then, by the shielding (shadow mask) use optionally to form organic luminous layer 222 and cathodic metal layer 224 on the 4th conductive layer 218 that exposes on the substrate 200.At this, just formed the Organic Light Emitting Diode (OLED) 226 that is linked to transistor 210, and finished the manufacturing of the AM-OLED of present embodiment.
Shown in Fig. 4 d and Fig. 5 d, illustrate the single OLED display pixel of being formed by transistor 210, capacitor 212 and Organic Light Emitting Diode 226.Because the rough surface in the capacitor 212 has improved its specific capacitance and so dwindled the capacitor area required size, and then provide additional surface area with usefulness as formation OLED district.At last, just formed as shown in Figure 3 the display pixel than high aperture of having.
Second embodiment:
Fig. 6 a～6b and Fig. 7 a～7b illustrate the manufacture method than the high aperture display pixel of having according to another embodiment of the present invention respectively, and it has shown respectively in the manufacturing process along in the capacitor area C ' of Fig. 3 middle conductor A～A ' and the OLED district 101 of line segment B～B ' and the interior section situation of thin film transistor region T2 '.
Please refer to Fig. 6 a and Fig. 7 a, the substrate 200 as quartz glass, non-alkali glass or its analog material at first is provided.Then on substrate 200, form resilient coating 202, for example composite film for forming by insulating material such as oxide and nitride.
Then, conformably forming first conductive layer on substrate 200, for example is through doped polycrystalline silicon layer.And after the execution (not shown) of a patterning step, stay the first conductive layer 204a ' on the resilient coating 202 in capacitor area C ' and in thin-film transistor and OLED district, form the first conductive layer 204b ' to be covered on a part of resilient coating 202.
Then, optionally forming a plurality of protrusions 205 on the part surface of the first conductive layer 204a ', for example is by existing semispherical silicon crystal (hemispherical grained silicon, HSG) the formed semispherical silicon crystal of manufacturing process.Therefore, be convenient to form a hackly surface on the first conductive layer 204a ', and provide in order to increase the additional surface of specific capacitance value.As shown in the figure, the surface of the protrusion 205 of above-mentioned semispherical silicon crystal is preferably the slynessization surface and forms bigger surf zone so that the first conductive layer 204a ' goes up.
Then can continue to adopt the manufacturing step of Fig. 4 b～4d among previous first embodiment and Fig. 5 b～5d institute icon, obtain the transistor that constitutes the OLED display pixel 210, capacitor 212 and Organic Light Emitting Diode 226 shown in Fig. 6 b and Fig. 7 b at last.Since the lifting of the specific capacitance that rough surface provided in the capacitor 212, thereby can dwindle capacitor area, and then provide additional surface area with usefulness as formation OLED district.At last, just formed as shown in Figure 3 the display pixel than high aperture of having.
The 3rd embodiment:
Fig. 8 a～8b and Fig. 9 a～9b illustrate the manufacture method than the high aperture display pixel of having according to another embodiment of the present invention respectively, and it has shown respectively in manufacturing process along the OLED district 101 of the capacitor area C ' of Fig. 3 middle conductor A～A ' and line segment B～B ' and the section situation of thin film transistor region T2 '.
Please refer to Fig. 8 a and Fig. 9 a, the substrate 200 as quartz glass, non-alkali glass or its analog material at first is provided.Then on substrate 200, form resilient coating 202.Resilient coating 202 is the composite film for being made up of insulating material such as oxide and nitride for example.
Then, forming first conductive layer of compliance on substrate 200, for example is through doped polycrystalline silicon layer.And after the execution (not shown) of a patterning step, stay on the resilient coating 202 of the first conductive layer 204a ' in capacitor area C ', and the first conductive layer 204b is covered on a part of resilient coating 202 in thin-film transistor and OLED district.
Then, conformably form a high-k dielectric materials layer on substrate 200, its material for example is tantalum pentoxide (Ta
2O
5), barium strontium titanate (BST), lead zirconate titanate (PZT) or its homologue.Then after the execution of a patterning step, go up formation one dielectric layer with high dielectric constant 206a, and on the first conductive layer 204b and its contiguous resilient coating 202, form a dielectric layer with high dielectric constant 206b in the first conductive layer 204a.
Then, compliance ground forms one second conductive layer on substrate 200, with the resilient coating 202 that covers dielectric layer with high dielectric constant 206a ', 206b ' and expose.Second conductive layer for example material is the metal level of tungsten or tantalum.And after suitable patterning step, form the second conductive layer 208a, 208b respectively at last the going up of the dielectric layer with high dielectric constant 206b ' of a part with whole dielectric layer with high dielectric constant 206a '.Then, the execution of injecting by source/drain ion, and adopt the second conductive layer 208b to mix suitable impurity as an ion injecting mask in being not in the first conductive layer 204b that covered of the second conductive layer 208b.So be convenient to form in the first conductive layer 204b channel region 204c and source/drain regions 204d.So, be convenient to form transistor 210 and capacitor 212 in the zones of different of substrate 200.Because capacitor 212 has adopted dielectric layer with high dielectric constant with as its dielectric electric capacity, so just can increase the specific capacitance in it and reduced the shared size of capacitor area C '.
Then then continue manufacturing step, obtain the transistor that constitutes the OLED display pixel 210, capacitor 212 and Organic Light Emitting Diode 226 shown in Fig. 8 b and Fig. 9 b at last as Fig. 4 b～4d among previous first embodiment and Fig. 5 b～5d institute icon.Because capacitor 212 is interior by adopting the high-k dielectric materials layer to increase the specific capacitance in it and then to dwindle the shared surface of capacitor area, to provide additional surface area with the usefulness as formation OLED district.At last, just formed as shown in Figure 3 the display pixel than high aperture of having.
Shown in Fig. 3, Fig. 4 d and Fig. 6 b, the invention provides a kind of display pixel that has than high aperture, display pixel of the present invention comprises coarse capacitor (ruggedcapacitor) and the Organic Light Emitting Diode that is formed on the substrate, wherein above-mentioned coarse capacitor comprises and is stacked over first conductive layer of 1 on the aforesaid substrate, a dielectric layer and one second conductive layer, and it has hackly surface respectively and by being formed at a transistor on the aforesaid substrate to link this capacitor and Organic Light Emitting Diode.In addition, shown in Fig. 8 b, the invention provides another kind and have display pixel than high aperture, it has a pile stack capacitor (stacked capacitor), and it has adopted dielectric layer with high dielectric constant as its dielectric electric capacity.
In the present invention, by the capacitor area size of the display pixel that decreases in AM-OLED to improve the aperture opening ratio of display pixel.And the minimizing of capacitor area size by in it, form the rough type capacitor with and/or use high-k dielectric materials.Can distinguish or combination enforcement in the disclosed method of the foregoing description.Because the size of capacitor area is dwindled, and is used to form Organic Light Emitting Diode so can obtain unnecessary surf zone, thereby has increased the aperture opening ratio of display pixel.Moreover use is as tantalum pentoxide (Ta in capacitor area
2O
5), high dielectric constant material such as barium strontium titanate (BST), lead zirconate titanate (PZT) or its homologue also can increase the specific capacitance value in the capacitor area.
In one embodiment of the invention, the rough surface in capacitor area forms by etching one resilient coating.
In another embodiment of the present invention, the rough surface in capacitor area is reached by the extra hemispherical structure that forms.
In another embodiment of the present invention, the lifting of specific capacitance is only reached by the use of high dielectric constant material in capacitor area.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (10)
1, a kind of manufacture method of display pixel comprises the following steps:
One substrate is provided;
Form a transistor and a rough type capacitor in the adjacent portion of this substrate simultaneously, wherein this coarse capacitor comprises and is stacked over one first conductive layer, a dielectric layer and one second conductive layer that has rough surface on this substrate respectively;
Form three conductive layer of one the 4th conductive layer with a part in the covering transistor; And
Forming an insulating barrier covers the 4th conductive layer of this transistor and this a rough type capacitor and a part and forms an Organic Light Emitting Diode on contiguous this transistorized a part of substrate, wherein an anode of this Organic Light Emitting Diode electrically is contacted with this transistor
Wherein the 3rd conductive layer forms this transistorized source/drain contact, and the marginal portion of the 4th conductive layer and the 3rd conductive layer overlaps and extends to the substrate remainder.
2, the manufacture method of display pixel as claimed in claim 1, wherein said rough surface are the slynessization surface.
3, the manufacture method of display pixel as claimed in claim 1, this first conductive layer that wherein has rough surface comprises a flat conductive layer, is formed with a plurality of protrusions on it.
4, the manufacture method of display pixel as claimed in claim 3,
Wherein said protrusion is a semispherical silicon crystal.
5, the manufacture method of display pixel as claimed in claim 1, wherein this dielectric layer is the dielectric layer with high dielectric constant that comprises tantalum pentoxide, barium strontium titanate or lead zirconate titanate.
6, a kind of display pixel comprises:
One Organic Light Emitting Diode is arranged on the substrate, and wherein this Organic Light Emitting Diode comprises one the 4th conductive layer;
One capacitor is arranged on this substrate, and wherein this capacitor comprises one first conductive layer, a dielectric layer and one second conductive layer that is stacked on this substrate and has rough surface respectively;
One transistor is arranged on this substrate to link this capacitor and this Organic Light Emitting Diode, and wherein this transistor has one the 3rd conductive layer; And
One insulating barrier places on this transistor and this capacitor and covers on part the 4th conductive layer of this Organic Light Emitting Diode of marginal portion of the 3rd conductive layer,
Wherein the 3rd conductive layer forms this transistorized source/drain contact, and the marginal portion of the 4th conductive layer and the 3rd conductive layer overlaps and extends to the substrate remainder.
7, display pixel as claimed in claim 6, wherein said rough surface are the slynessization surface.
8, display pixel as claimed in claim 6, wherein this first conductive layer with rough surface comprises a planar conductor layer and a plurality of protrusion that is formed on this planar conductor layer.
9, display pixel as claimed in claim 8, wherein said protrusion are semispherical silicon crystal.
10, display pixel as claimed in claim 6, wherein this dielectric layer is the dielectric layer with high dielectric constant that comprises tantalum pentoxide, barium strontium titanate or lead zirconate titanate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100713221A CN100459101C (en) | 2004-07-19 | 2004-07-19 | Display panel and its prdoucing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100713221A CN100459101C (en) | 2004-07-19 | 2004-07-19 | Display panel and its prdoucing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588643A CN1588643A (en) | 2005-03-02 |
| CN100459101C true CN100459101C (en) | 2009-02-04 |
Family
ID=34604593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100713221A Active CN100459101C (en) | 2004-07-19 | 2004-07-19 | Display panel and its prdoucing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100459101C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101710586B (en) * | 2009-01-09 | 2011-12-28 | 深超光电（深圳）有限公司 | Storage capacitor for improving aperture opening ratio and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0561071A (en) * | 1991-09-04 | 1993-03-12 | Sony Corp | Liquid crystal display device |
| CN1199245A (en) * | 1997-04-22 | 1998-11-18 | 三星电子株式会社 | Method of forming integrated circuit capacitors and capacitors formed thereby |
| US6281543B1 (en) * | 1999-08-31 | 2001-08-28 | Micron Technology, Inc. | Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same |
| CN1417863A (en) * | 2001-08-06 | 2003-05-14 | 三星Sdi株式会社 | Plate display and its making process |
| US20030137255A1 (en) * | 2001-12-28 | 2003-07-24 | Jae-Yong Park | Active matric organic electroluminescence display device |
| US20040004597A1 (en) * | 2002-07-04 | 2004-01-08 | Nien-Hui Kung | Capacitor structure in a low temperature poly silicon display |
-
2004
- 2004-07-19 CN CNB2004100713221A patent/CN100459101C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0561071A (en) * | 1991-09-04 | 1993-03-12 | Sony Corp | Liquid crystal display device |
| CN1199245A (en) * | 1997-04-22 | 1998-11-18 | 三星电子株式会社 | Method of forming integrated circuit capacitors and capacitors formed thereby |
| US6281543B1 (en) * | 1999-08-31 | 2001-08-28 | Micron Technology, Inc. | Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same |
| CN1417863A (en) * | 2001-08-06 | 2003-05-14 | 三星Sdi株式会社 | Plate display and its making process |
| US20030137255A1 (en) * | 2001-12-28 | 2003-07-24 | Jae-Yong Park | Active matric organic electroluminescence display device |
| US20040004597A1 (en) * | 2002-07-04 | 2004-01-08 | Nien-Hui Kung | Capacitor structure in a low temperature poly silicon display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1588643A (en) | 2005-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100426031B1 (en) | an active matrix organic electroluminescence display and a manufacturing method of the same | |
| US6882105B2 (en) | Organic light-emitting display device | |
| TWI399853B (en) | Organic light emitting diode display | |
| EP0940796B1 (en) | Active matrix display | |
| US7575966B2 (en) | Method for fabricating pixel structure of active matrix organic light-emitting diode | |
| JP4365364B2 (en) | Organic electroluminescent device and manufacturing method thereof | |
| EP3518281A1 (en) | Organic light-emitting diode (oled) array substrate and fabrication method therefor, display device | |
| EP2816627B1 (en) | Display device | |
| CN101043047A (en) | Display apparatus and method of manufacturing thereof | |
| CN1636235A (en) | Active matrix type organic electroluminescent display device and method of manufacturing the same | |
| CN101431053B (en) | Electroluminescence element forming method | |
| KR101054341B1 (en) | Organic light emitting display device and manufacturing method thereof | |
| CN1770465A (en) | Organic light emitting diode display and manufacturing method thereof | |
| KR20060023180A (en) | Organic electroluminescence panel and manufacturing method thereof | |
| US20040079945A1 (en) | Device including OLED controlled by n-type transistor | |
| WO2007130289A2 (en) | Electrical connection in oled devices | |
| US10868093B2 (en) | Light emitting diode display | |
| KR100565674B1 (en) | Dual Organic Electroluminescence display panel and Fabrication Method for the same | |
| US7129524B2 (en) | Organic electroluminescent device and method for fabricating the same | |
| KR101820166B1 (en) | White organic light emitting diode display device and method of fabricating the same | |
| US20040173819A1 (en) | Color display device | |
| US11678539B2 (en) | Display unit | |
| CN1259807C (en) | Light-emission and its manufacturing method | |
| CN100459101C (en) | Display panel and its prdoucing method | |
| US20060003488A1 (en) | Display pixel and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |