CN100454694C - Nitride semiconductor light-emitting device - Google Patents

Nitride semiconductor light-emitting device Download PDF

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Publication number
CN100454694C
CN100454694C CNB2006101084283A CN200610108428A CN100454694C CN 100454694 C CN100454694 C CN 100454694C CN B2006101084283 A CNB2006101084283 A CN B2006101084283A CN 200610108428 A CN200610108428 A CN 200610108428A CN 100454694 C CN100454694 C CN 100454694C
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nitride semiconductor
semiconductor photogenerator
sealing gas
semiconductor laser
hydrogen
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CN1909311A (en
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花冈大介
石田真也
高谷邦启
伊藤茂稔
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Sharp Fukuyama Laser Co Ltd
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Sharp Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

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  • Semiconductor Lasers (AREA)

Abstract

In a nitride semiconductor light-emitting device, a cap is pressure-bonded on the top surface of a stem under electric discharge to form a package. The package encloses a heatsink, a nitride semiconductor laser element, electrode pins, and wires, and has sealed inside it a gas containing oxygen as a sealed atmosphere. At least the inner surface of the cap is plated with Ni and Pd, which are metals that can occlude hydrogen.

Description

Nitride semiconductor photogenerator
Technical field
The present invention relates to a kind of nitride semiconductor photogenerator that adopts nitride semiconductor luminescent element, and more specifically relate to the encapsulation of such luminescent device.
Background technology
Usually, extensively adopted the tank body encapsulating products as for example light emitting semiconductor device of semiconductor laser.In tank body encapsulated semiconductor laser, being installed in heat sink, semiconductor Laser device on the base etc., to be sealed in lid inner.For example, in the semiconductor laser that in JP-A-H10-313147, proposes, in order to prevent that semiconductor laser etc. is exposed to high temperature when the shaping cover, with inert gas seal in the space that centers on by the lid and bottom seat.
In tank body encapsulated semiconductor laser, be bonded to base and other reason in order to allow to cover under discharge, for example the metal of Pd or Ni often uses in the inner surface of base and lid, promptly in the inside part of the encapsulation that base and lid form together.This metal has the character of energy occlusion (occlude) hydrogen atom.Promptly, in the semiconductor laser that in above-mentioned JP-A-H10-313147, proposes, when it is driven for a long time, when producing heat and the heating of semiconductor laser integral body along with semiconductor Laser device, the hydrogen atom of occlusion in metal can be used as hydrogen molecule and is released in the inert gas that is sealed in inside.
On the other hand, the known p N-type semiconductor N that is doped with acceptor impurity can demonstrate resistance variations when heating in nitrogen atmosphere.For example, when by by with the nitride-based semiconductor Al of Mg as acceptor doping xGa yIn zDuring by heat treatment, its resistance increases in nitrogen atmosphere for N (wherein 0≤x≤1,0≤y≤1,0≤z≤1 and x+y+z=1) and film that the p type nitride-based semiconductor that obtains forms.
Promptly, in the part inwardly of its encapsulation, use in the semiconductor laser of material that can absorbing hydrogen, if nitride semiconductor Laser device is as its semiconductor Laser device, under the influence of the hydrogen molecule that when driving semiconductor laser, is discharged, the resistance of use therein p N-type semiconductor N may increase, and therefore driving voltage may increase, and makes from its emitted laser characteristic instability.
Summary of the invention
The nitride semiconductor photogenerator that the purpose of this invention is to provide a kind of stable emission laser is even used the material of energy absorbing hydrogen in its encapsulation.
To achieve these goals, according to the present invention, nitride semiconductor photogenerator is provided with: by base be fixed on the encapsulation that the lid on this base constitutes; Be arranged on the inner nitride semiconductor luminescent element of this encapsulation; With the sealing gas that is sealed in this encapsulation inside.Here, it is inner that the material of energy absorbing hydrogen is arranged on this encapsulation, and sealing gas comprises oxygen.
According to the present invention, in above-mentioned semiconductor laser, the material of energy absorbing hydrogen can be formed in the inner surface of lid.
According to the present invention, in above-mentioned semiconductor laser, the material of energy absorbing hydrogen can comprise the metal of at least a type of selecting from the group of Ti, Zr, Hf, V, Nb, Ta, Ni and Pd.
According to the present invention, in above-mentioned semiconductor laser, sealing gas can comprise 1% or above oxygen.
According to the present invention, in above-mentioned semiconductor laser, sealing gas can comprise oxygen and inert gas.
According to the present invention, in above-mentioned semiconductor laser, inert gas can be the inert gas of at least a type selected from the group of nitrogen, helium, neon, argon, xenon and krypton.
According to the present invention, in above-mentioned semiconductor laser, sealing gas can be a dry air.
According to the present invention, in above-mentioned semiconductor laser, the dew point of sealing gas can be-10 ℃ or following.
Description of drawings
Fig. 1 is the schematic diagram that illustrates according to the structure of nitride semiconductor photogenerator of the present invention.
Embodiment
After this, embodiments of the invention will be described with reference to the drawings.Fig. 1 is the schematic diagram that illustrates according to the structure of nitride semiconductor photogenerator of the present invention.
In nitride semiconductor photogenerator 10, on the top surface of base 11, be provided with heat sink 12 and electrode pins 14; On the basal surface of base 11, two contact conductors 16 are set.On heat sink 12, nitride semiconductor Laser device 13 is set as nitride semiconductor luminescent element.This nitride semiconductor Laser device 13 and electrode pins 14 are electrically connected by lead 15.
On the top surface of base 11, also be provided with and cover 17.Base 11 and lid 17 form encapsulation 20 together.Lid 17 is equipped with the window 18 that is formed by glass, thereby makes from nitride semiconductor Laser device 13 emitted laser outgoing.That encapsulation 20 is sealed is heat sink 12, nitride semiconductor Laser device 13, electrode pins 14 and lead 15, and seals sealing gas 19 therein.
Nitride semiconductor Laser device 13 is elements of chip form, its by cleavage (cleaving) thus cutting apart the wafer that (splitting) wherein be formed with nitride semiconductor layer makes, be further processed then, for example electrode forms, wherein nitride semiconductor layer by the p type nitride semiconductor layer that is doped with acceptor impurity, be doped with the n type nitride semiconductor layer of donor impurity and form by the mqw active layer that nitride-based semiconductor forms.When voltage being applied between p type and the n N-type semiconductor N with betwixt by drive current the time, the p-n junction layer that between them they is linked together is luminous.Light resonance between the resonance surface, resonance surface is for being formed at cleavage surface and having two parallel minute surfaces of different reflectivity, and therefore is exaggerated up to going out laser by the resonance surface emitting that has than antiradar reflectivity.Pass window 18 with outgoing from encapsulation from nitride semiconductor Laser device 13 emitted laser.
In this embodiment, base 11 has and is coated with the Fe base members of Cu/Ni/Au coating as metal layer.Heat sink 12 have and are coated with the Cu base members of Cu/Ni/Au coating as metal layer, this metal layer be arranged on similar on the base 11.Base 11 and heat sink 12 is brazed together, and heat sink 12 and nitride semiconductor Laser device 13 by the welding of AuSn scolder.Lid 17 has for example 45 alloys (Fe/45%Ni alloy) base member, and its surfaces externally and internally is coated with Ni and Pd.Lid 17 is bonded to base 11 under discharge.Window 18 usefulness low-melting glasses join to and cover 17.Be coated in cover 17 lip-deep Ni and Pd can be by forming, for example by sputter with electroplating different any technology.
Be encapsulated into the mist of dry air or oxygen and inert gas, for example the mist of 80% nitrogen and 20% oxygen is desirable as sealing atmosphere 19.This has guaranteed nitride semiconductor photogenerator 10 long-time stable operations and driving voltage does not increase.Allow oxygen concentration in the sealing gas 19 be 1ppm or above but 100% or below, preferred 1000ppm or more than, and more preferably 1% or more than.
In order to prevent that nitride semiconductor Laser device 13 from being polluted by moisture, the dew point as the gas of sealing atmosphere 19 is preferably-10 ℃ or following here, and more preferably-30 ℃ or following.Such moisture pollutes when making the light-emitting component of using up the strong for example semiconductor Laser device in output part, and when light-emitting component is luminous in the shortwave district from indigo plant to the ultraviolet, promptly remarkable especially when it is nitride semiconductor luminescent element.
To provide the result of the reliability testing that the nitride light-emitting device 10 with present embodiment carries out now.
The listed conduct of nitride semiconductor photogenerator 10 with said structure and table 1 is sealed in 12 kinds of gas with various combinations of sealing atmosphere 19 wherein to prepare different samples, these samples experience burn-in tests then, in burn-in test, they in 60 ℃ with the constant current driven of 150mA.Here, all gas has-40 ℃ dew point, and in 12 kinds of gases, four kinds are not satisfied above-mentioned oxygen concentration condition, therefore as control example.When nitride semi-conductor laser when driving voltage demonstrates 1V or above increase with respect to initial value (about 5V) within 50 hours after it begins to be driven, it is be evaluated as defective.The result of test and appraisal is presented in the table 1 together.
Table 1
Sealing atmosphere component Ratio of defects
Embodiment 1 Dry air (about 78%N 2, about 21%O 2) 0％
Embodiment 2 N 2+O 2Mist has 80%O 2 0％
Embodiment 3 N 2+O 2Mist has 60%O 2 0％
Embodiment 4 N 2+O 2Mist has 40%O 2 0％
Embodiment 5 N 2+O 2Mist has 20%O 2 0％
Embodiment 6 N 2+O 2Mist has 10%O 2 0％
Embodiment 7 N 2+O 2Mist has 1%O 2 0％
Embodiment 8 N 2+O 2Mist has 1000ppm O 2 70％
Control example 1 N 2+O 2Mist has 100ppm O 2 100％
Control example 2 N 2+O 2Mist has 10ppm O 2 100％
Control example 3 N 2+O 2Mist has 1ppm O 2 100％
Control example 4 Pure N 2Gas 100％
These results show following content.When nitride semiconductor photogenerator 10 was driven, its temperature raise, and was included in and covers 17 Ni that plate and the hydrogen release among the Pd is put in the blanket gas atmosphere 19.In control example 1 to 4, according to supposition, the hydrogen of release causes the increase of the resistance of nitride semiconductor Laser device 13, and therefore its driving voltage increases, and it is defective to make all samples become.On the other hand, in embodiment 1 to 7, nearly all sample keeps zero defect.In these samples, according to supposition, the resistance that the oxygen of the given or higher concentration that comprises in sealing atmosphere 19 has reduced the nitride semiconductor Laser device 13 that is caused by the hydrogen that discharges increases.
Above-mentioned discovery is clear and definite, and oxygen becomes the key factor that prevents the defective in the nitride semiconductor photogenerator of the present invention.At 1000ppm or following oxygen concentration, ratio of defects height; At 100ppm or following oxygen concentration, ratio of defects is 100%.Therefore, at the oxygen concentration preferred 1000ppm of sealing in the atmosphere 19 or higher, and preferred 1% or more than.In this embodiment, carry out flaw evaluation for 50 hours driving; Need to guarantee the situation of the operating reliability of longer time in hypothesis, preferred about 40% or above more hyperoxia concentration.
For to be sealed in wherein dry air as sealing atmosphere 19 and to be sealed in pure N wherein 2Gas is as the sample of light emitting semiconductor device of sealing atmosphere 19, before burn-in test and measured the hydrogen concentration of the nitride semiconductor layer of nitride semiconductor Laser device 13 afterwards.Before burn-in test, be pure N for dry air with sealing atmosphere in sealing atmosphere 19 2In the sample of gas, hydrogen concentration equates.On the other hand, after burn-in test, be that hydrogen concentration remains unchanged in the sample of dry air in sealing atmosphere 19, on the contrary, be pure N in sealing atmosphere 19 2Sample in, hydrogen concentration has increased by 30% to 40% before than burn-in test.According to supposition, this has caused the increase of driving voltage in the burn-in test.Therefore, presumably, in sealing atmosphere 19, increase oxygen and help to reduce nitride semiconductor layer and absorb the hydrogen that Ni from the inner surface of lid and Pd are discharged into nitride semiconductor photogenerator 10.
In the present embodiment, in lid 17, Ni and Pd are as the metal of energy absorbing hydrogen; But can use any other materials of at least a types of metals of from the group of Ti, Zr, Hf, V, Nb, Ta, Ni and Pd, selecting that comprises to obtain similar effects with replacing.The use of such material is not limited to be plated in covers on 17, and it can be used in any element, comprises the lid 17 that keeps in touch with sealing atmosphere 19, for example in base 11 and heat sink 12, to obtain similar effects.In this embodiment, nitride semiconductor Laser device 13 is directly installed on heat sink 12; Yet handset seat (submount) can be inserted between them, can be used in this handset seat to obtain similar effects at this situation above-mentioned material.
In above-mentioned reliability testing, as sealing atmosphere 19, the inert nitrogen gas that adds aerobic is proved to be desired effects is provided; Can use the inert gas of at least a type of from the group of nitrogen, helium, neon, argon, xenon and krypton, selecting to obtain similar effects.
The present invention is effective comprising its electrical properties in may be because of the semiconductor element that has the material that hydrogen changes.Such semiconductor element comprises AlGaAs based semiconductor component, AlGaInP based semiconductor component and AlGaInN based semiconductor component, above-mentioned last a kind of be so-called nitride semiconductor device.Because the characteristic of nitride semiconductor device is easy to change when having hydrogen especially, therefore effect of the present invention is more remarkable to it.
In addition, in nitride semiconductor luminescent element, the present invention provides its effect when comprising the p type nitride-based semiconductor that is doped with acceptor impurity.If this p type nitride-based semiconductor is AlGaN, compare during with it for GaN etc., more be difficult to increase hole concentration, and be attributable to the easier appearance of resistance increase of hydrogen.This makes effect of the present invention more remarkable.
In the present embodiment, what be used as nitride semiconductor luminescent element is nitride semiconductor Laser device 13, and it is the light-emitting diode that adopts laser generation.Replace ground, can use the light-emitting component of any other type, for example mainly rely on the superluminescent diode (super-luminescent diode) of self-luminous emitting light emitting diode or employing self-luminous emission and laser generation.

Claims (8)

1, a kind of nitride semiconductor photogenerator comprises:
Encapsulation comprises base and the lid that is fixed on the base;
Nitride semiconductor luminescent element, it is inner to be arranged on described encapsulation; With
Sealing gas is sealed in described encapsulation inside;
It is inner that material that wherein can absorbing hydrogen is arranged on described encapsulation, and described sealing gas comprises oxygen, and described material that can absorbing hydrogen discharges hydrogen to the described sealing gas that encapsulates inside when described nitride semiconductor photogenerator is driven.
2, nitride semiconductor photogenerator according to claim 1, the material of wherein said energy absorbing hydrogen is formed on the inner surface and outer surface of described lid, and described the lid under discharge is bonded to described base.
3, nitride semiconductor photogenerator according to claim 2, the material of wherein said energy absorbing hydrogen comprises the metal of at least a type of selecting from the group of Ti, Zr, Hf, V, Nb, Ta, Ni and Pd.
4, nitride semiconductor photogenerator according to claim 1, wherein said sealing gas comprise 1% or above oxygen.
5, nitride semiconductor photogenerator according to claim 1, wherein said sealing gas comprises oxygen and inert gas.
6, nitride semiconductor photogenerator according to claim 5, wherein said inert gas are the inert gases of at least a type selected from the group of nitrogen, helium, neon, argon, xenon and krypton.
7, nitride semiconductor photogenerator according to claim 1, wherein said sealing gas is a dry air.
8, nitride semiconductor photogenerator according to claim 1, the dew point of wherein said sealing gas are-10 ℃ or following.
CNB2006101084283A 2005-08-02 2006-08-02 Nitride semiconductor light-emitting device Active CN100454694C (en)

Applications Claiming Priority (3)

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JP2005223582 2005-08-02
JP223582/05 2005-08-02
JP170988/06 2006-06-21

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CN1909311A CN1909311A (en) 2007-02-07
CN100454694C true CN100454694C (en) 2009-01-21

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5783818A (en) * 1995-05-08 1998-07-21 Matsushita Electric Industrial Co., Ltd. Integrated type optical pickup having packaging with gas-tight seal
CN2329990Y (en) * 1997-12-27 1999-07-21 中国科学院长春物理研究所 Semiconductor laser amplifier heat sink-casing assembly with input-output optical fiber
JP2000133868A (en) * 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The Semiconductor laser module
CN1063587C (en) * 1993-07-14 2001-03-21 康宁股份有限公司 Packaging of high power semiconductor lasers
WO2004095663A1 (en) * 2003-04-24 2004-11-04 Sanyo Electric Co., Ltd. Semiconductor laser device
US20040240800A1 (en) * 2003-03-27 2004-12-02 Kenichiro Uchida Light-transmitting module capable of heating the light-emitting module and the substrate included therein

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1063587C (en) * 1993-07-14 2001-03-21 康宁股份有限公司 Packaging of high power semiconductor lasers
US5783818A (en) * 1995-05-08 1998-07-21 Matsushita Electric Industrial Co., Ltd. Integrated type optical pickup having packaging with gas-tight seal
CN2329990Y (en) * 1997-12-27 1999-07-21 中国科学院长春物理研究所 Semiconductor laser amplifier heat sink-casing assembly with input-output optical fiber
JP2000133868A (en) * 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The Semiconductor laser module
US20040240800A1 (en) * 2003-03-27 2004-12-02 Kenichiro Uchida Light-transmitting module capable of heating the light-emitting module and the substrate included therein
WO2004095663A1 (en) * 2003-04-24 2004-11-04 Sanyo Electric Co., Ltd. Semiconductor laser device

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Effective date of registration: 20220401

Address after: Asahi 1, Damen Machi, Fukuyama, Hiroshima, Japan

Patentee after: Sharp Fukuyama laser Co.,Ltd.

Address before: Osaka, Japan

Patentee before: Sharp Corp.