CN100452653C - High-speed high-voltage switch circuit - Google Patents
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- CN100452653C CN100452653C CNB2005101120251A CN200510112025A CN100452653C CN 100452653 C CN100452653 C CN 100452653C CN B2005101120251 A CNB2005101120251 A CN B2005101120251A CN 200510112025 A CN200510112025 A CN 200510112025A CN 100452653 C CN100452653 C CN 100452653C
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Abstract
A high-reliability series voltage-multiplying high-speed high-voltage switch circuit is formed by connecting based on multi-stage field effect transistors, and comprises the following components: the 1 st stage consists of a field effect transistor, three resistors and a capacitor; the nth stage from the 2 nd stage to the nth stage is composed of an nth field effect transistor, an nth 1 resistor, an nth 2 resistor, an nth 3 resistor, an nth 1 capacitor and an nth 2 capacitor, the requirement on the withstand voltage of the components is low, and the amplitude of output pulse voltage is high through multi-stage series voltage doubling. The bias high voltage is adjusted, pulse high voltages with different amplitudes can be output, and the adjustment range is wide. The high-speed high-voltage switch circuit has the characteristics of small volume, low cost, wide adjustment range, stability and reliability, and can be used in the fields of electro-optical Q-switch, pulse type particle acceleration/deflection test, high-energy physics, medical treatment, radar, microwave and the like.
Description
Technical field
The present invention relates to the pulse of high voltage two-forty, the high switch of high voltage of particularly a kind of high voltage two-forty pulse.
Background technology
Existing high speed high voltage switch circuit is used the avalanche transistor cascade mostly, at final stage output high-voltage pulse.In the sort circuit, transistor is operated in avalanche point, and very high to the requirement of bias voltage, the output pulse amplitude adjustable range is very little.Switching circuit based on field effect transistor (MOSFET) is also arranged at present, multiplication of voltage switching circuit as shown in Figure 1, in the moment that the input triggering signal is opened, the closer to output, the voltage that element bears is high more, so sort circuit is very high to the performance requirement of element, the output voltage that difficult realization is very high, the high-voltage switch gear volume of Gou Chenging is big in such a way, the cost height.
Summary of the invention
The purpose of this invention is to provide a kind of high speed high voltage switch circuit, this switch is answered the pulse of exportable high voltage two-forty, and has the advantages that volume is little, cost is low.
Technical solution of the present invention is as follows:
A kind of high speed high voltage switch circuit, its formation is based on multistage field-effect transistor, abbreviates that field effect transistor is formed by connecting as, is characterised in that its formation comprises:
The 1st grade is made of the 1st field effect transistor, the 11st resistance, the 12nd resistance, the 13rd resistance, the 11st electric capacity;
The 2nd grade is made of the 2nd field effect transistor, the 21st resistance, the 22nd resistance, the 23rd resistance, the 21st electric capacity, the 22nd electric capacity;
3rd level is identical with the second level to the structure of n level, and promptly the n level is made of n field effect transistor, n1 resistance, n2 resistance, n3 resistance, n1 electric capacity, n2 electric capacity, the concrete annexation of elements at different levels:
Comprise:
The 1st grade: the grid of the 1st field effect transistor links to each other the other end earth connection of the 13rd resistance with an end of the 13rd resistance and the input of input signal; The source ground of the 1st field effect transistor; One end of the 21st resistance of one end of the drain electrode of the 1st field effect transistor and the 11st electric capacity, an end of the 11st resistance and the 2nd grade links to each other, the other end of the 11st electric capacity links to each other with an end of the 12nd resistance and links to each other with the source electrode of the 2nd grade the 2nd field effect transistor, the other end earth connection of the 12nd resistance, another termination high pressure HV of the 11st resistance;
The 2nd grade: the grid of the 2nd field effect transistor links to each other the other end earth connection of the 22nd electric capacity with an end of the 23rd resistance, an end of the 22nd electric capacity and an end of 3rd level the 32nd electric capacity; The source electrode of the 2nd field effect transistor links to each other and links to each other with an end of prime the 11st electric capacity, the 12nd resistance with the other end of the 23rd resistance, an end of the 22nd resistance, and the other end of the 22nd resistance links to each other with an end of the 21st electric capacity and links to each other with the source electrode of the 3rd field effect transistor of 3rd level; One end of the drain electrode of the 2nd field effect transistor and the 21st resistance, the other end of the 21st electric capacity link to each other and link to each other with an end of the 31st resistance of 3rd level, and the other end of the 21st resistance links to each other with the leakage level of the 1st grade of the 1st field effect transistor;
……；
The i level: the grid of i field effect transistor links to each other with an end of an end of i3 resistance, i2 electric capacity and an end of next stage i+1 electric capacity, and the other end of i2 electric capacity links to each other with the grid of prime i-1 field effect transistor; The source electrode of i field effect transistor links to each other and links to each other with an end of prime (i-1) 1 electric capacity, (i-1) 2 resistance with an end of the other end of i3 resistance, i2 resistance, and the other end of i2 resistance links to each other with an end of i1 electric capacity and links to each other with the source electrode of the i+1 field effect transistor of next stage; The drain electrode of i field effect transistor links to each other with the other end of an end of i1 resistance, i1 electric capacity and links to each other with an end of the i+1 resistance of next stage, and the other end of i1 resistance links to each other with the leakage level of prime i-1 field effect transistor;
……；
The annexation of last each element of n level: the grid of n field effect transistor links to each other with an end of n3 resistance, an end of n2 electric capacity, and the other end of n2 electric capacity links to each other with the grid of previous stage n-1 field effect transistor; The source electrode of n field effect transistor links to each other and links to each other with an end of previous stage (n-1) 1 electric capacity, (n-1) 2 resistance with an end of the other end of n3 resistance, n2 resistance, and the other end of n2 resistance links to each other with an end of n1 electric capacity and constitutes the output of this switching circuit; The drain electrode of n field effect transistor links to each other with an end of n1 resistance, the other end of n1 electric capacity, and the other end of n1 resistance links to each other with the leakage level of prime n-1 field effect transistor.
The direct ground connection of an end that the 2nd electric capacity of described 3rd level to the n level links to each other with the prime field effect transistor.
Technique effect of the present invention:
Show with experiment by analysis: the high speed high voltage switch circuit that the present invention constitutes, no matter be static (pipe is not open-minded) or conducting moment, the potential difference of bearing on all components and parts all is no more than bias voltage HV, have characteristics such as volume is little, cost is low, and much the level string obtains very high voltage pulse output together.
Description of drawings
Fig. 1 is existing multiplication of voltage switching circuit figure based on field effect transistor
Fig. 2 is the circuit diagram of high speed high voltage switch circuit embodiment 1 of the present invention
Fig. 3 is the circuit diagram of high speed high voltage switch circuit embodiment 2 of the present invention
Embodiment
Below in conjunction with drawings and Examples the present invention is elaborated.
See also Fig. 2 earlier, Fig. 2 is the circuit diagram of high speed high voltage switch circuit embodiment 1 of the present invention, and as seen from the figure, high speed and high pressure of the present invention closes to be made up of plural serial stage, and every grade all is made of field effect transistor, electric capacity, resistance, and its formation comprises:
The 1st grade is made of the 1st field effect transistor Q1, the 11st resistance R 1_1, the 12nd resistance R 1_2, the 13rd resistance R 1_3, the 11st capacitor C 1_1;
The 2nd grade is made of the 2nd field effect transistor Q2, the 21st resistance R 2_1, the 22nd resistance R 2_2, the 23rd resistance R 2_3, the 21st capacitor C 2_1, the 22nd capacitor C 2_2;
3rd level is identical with the 2nd grade to the structure of n level, and promptly the n level is made of n field effect transistor Qn, n1 resistance R n_1, n2 resistance R n_2, n3 resistance R n_3, n1 capacitor C n_1, n2 capacitor C n_2, the concrete annexation of elements at different levels:
The 1st grade: the grid of the 1st field effect transistor Q1 links to each other the other end earth connection of the 13rd resistance R 1_3 with the end of the 13rd resistance R 1_3 and the input of input signal; The source ground of the 1st field effect transistor Q1; The end of the 21st resistance R 2_1 of the end of the drain electrode of the 1st field effect transistor Q1 and the 11st capacitor C 1_1, the end of the 11st resistance R 1_1 and the 2nd grade links to each other, the other end of the 11st capacitor C 1_1 links to each other with the end of the 12nd resistance R 1_2 and links to each other with the source electrode of the 2nd grade the 2nd field effect transistor Q2, the other end earth connection of the 12nd resistance R 1_2, another termination high voltage input terminal HV of the 11st resistance R 1_1;
The 2nd grade: the grid of the 2nd field effect transistor Q2 links to each other the other end earth connection of the 22nd capacitor C 2_2 with the end of the 23rd resistance R 2_3, the end of the 22nd capacitor C 2_2 and the end of 3rd level the 32nd capacitor C 3_2; The source electrode of the 2nd field effect transistor Q2 links to each other and links to each other with the end of prime the 11st capacitor C 1_1, the 12nd resistance R 1_2 with the other end of the 23rd resistance R 2_3, the end of the 22nd resistance R 2_2, and the other end of the 22nd resistance R 2_2 links to each other with the end of the 21st capacitor C 2_1 and links to each other with the source electrode of the 3rd field effect transistor Q3 of 3rd level; The end of the drain electrode of the 2nd field effect transistor Q2 and the 21st resistance R 2_1, the other end of the 21st capacitor C 2_1 link to each other and link to each other with the end of the 31st resistance R 3_1 of 3rd level, and the other end of the 21st resistance R 2_1 links to each other with the leakage level of the 1st grade of the 1st field effect transistor Q1;
……；
The i level: the grid of i field effect transistor Qi links to each other with the end of the end of i3 resistance R i_3, i2 capacitor C i_2 and the end of next stage i+1 capacitor C i+1_2, and the other end of i2 capacitor C i_2 links to each other with the grid of prime i-1 field effect transistor Qi-1; The source electrode of i field effect transistor Qi links to each other and links to each other with the end of prime (i-1) 1 capacitor C i-1_1, (i-1) 2 resistance R i-1_2 with the end of the other end of i3 resistance R i_3, i2 resistance R i_2, and the other end of i2 resistance R i_2 links to each other with the end of i1 capacitor C i_1 and links to each other with the source electrode of the i+1 field effect transistor Qi+1 of next stage; The drain electrode of i field effect transistor Qi links to each other with the other end of the end of i1 resistance R i_1, i1 capacitor C i_1 and links to each other with the end of the i+1 resistance R i+1_1 of next stage, and the other end of i1 resistance R i_1 links to each other with the leakage level of prime i-1 field effect transistor Qi-1;
……；
The annexation of last each element of n level: the grid of n field effect transistor Qn links to each other with the end of n3 resistance R n_3, the end of n2 capacitor C n_2, and the other end of n2 capacitor C n_2 links to each other with the grid of prime n-1 field effect transistor Qn-1; The source electrode of n field effect transistor Qn links to each other and links to each other with the end of prime (n-1) 1 capacitor C n-1_1, (n-1) 2 resistance R n-1_2 with the end of the other end of n3 resistance R n_3, n2 resistance R n_2, and the other end of n2 resistance R n_2 links to each other with the end of n1 capacitor C n_1 and constitutes the output of this switching circuit; The drain electrode of n field effect transistor Qn links to each other with the end of n1 resistance R n_1, the other end of n1 capacitor C n_1, and the other end of n1 resistance R n_1 links to each other with the leakage level of prime n-1 field effect transistor Qn-1.
Be that example illustrates operation principle of the present invention with Fig. 2 circuit below.When input pulse triggers the 1st field effect transistor Q1, the 1st field effect transistor Q1 is opened very soon, the very fast vanishing of the 1st field effect transistor Q1 drain potentials, so at the 11st capacitor C 1_1 other end, promptly set up the negative high voltage that amplitude is HV, and the Partial charge on the 11st capacitor C 1_1 is assigned to the grid source equivalence capacitor C of the 22nd capacitor C 2_2 and the 2nd field effect transistor Q2 very soon in the source S of the 2nd field effect transistor Q2
GsEIFOn, when the appearance of the 22nd capacitor C 2_2 is worth when suitable, satisfy at C
GsEIFThe voltage of last foundation is during greater than the threshold voltage of the 2nd field effect transistor Q2, the 2nd field effect transistor Q2 also is opened very soon, so set up the negative high voltage that amplitude is 2HV at the source electrode of the 3rd field effect transistor Q3, and the like, until the negative pulse of the output of n level output nHV.Resistance R n_1 at different levels, Rn_2, Rn_3 provide quiescent point and constitute electric charge for field effect transistor Qn at the corresponding levels and charge and discharge the loop.Proper when circuit parameter coupling, in input pulse signal triggering moment, all field effect transistor are almost opened simultaneously, obtain the high-voltage pulse of nanosecond at output.The gate source voltage of this high voltage switch circuit major control field effect transistor MOSFET at different levels, do not resemble the switching circuit that the snowslide pipe constitutes, each transistorized snowslide bias voltage of major control, the adjustable range of therefore exporting high-voltage pulse is more much bigger than the high-voltage switch gear adjustable range that constitutes with the snowslide pipe.
Know by analyzing us, in existing circuit shown in Figure 1, the closer to output stage, biasing resistor, grid are big more to the voltage that the dividing potential drop electric capacity between ground bears, therefore with the high-voltage switch gear of circuit formation shown in Figure 1, withstand voltage properties to components and parts requires high, volume is big, that is to say, is subjected to the restriction of components and parts performance, stages can not be a lot, and the output high voltage pulse is difficult for too high.The high-voltage switch gear that constitutes with the present invention is no matter be static (pipe is not open-minded) or conducting moment, the potential difference of bearing on all components and parts all is no more than bias voltage HV, have characteristics such as volume is little, cost is low, and much the level string obtains very high voltage pulse output together.
Ifs circuit has only one-level, exports high voltage pulse from the end that the 11st capacitor C 1_1 links to each other with the 12nd resistance R 1_2; Ifs circuit has two-stage, exports high voltage pulse from the end that the 21st capacitor C 2_1 links to each other with the 22nd resistance R 2_2; Ifs circuit has multistage, then the end output high voltage pulse that links to each other with n2 resistance R n_2 from n1 capacitor C n_1.
Under the few situation of circuit progression, can be with capacitor C 3_2, the C4_2 end ground connection that links to each other of capacitor C n_2 and field effect transistor prime of one-level to the last.Physical circuit as shown in Figure 3, Fig. 3 is the circuit diagram of high speed high voltage switch circuit embodiment 2 of the present invention.The 2nd electric capacity (C3_2, the C4_2 of 3rd level to the n level described in the figure ... Cn_2) the direct ground connection of an end that links to each other with the previous stage field effect transistor is the difference of present embodiment 2 and Fig. 2 embodiment 1, in other words, only be that the capacitor C n_2 that will be connected between grids at different levels changes ground connection respectively into by series connection ground connection.Many and few main appearance values of progression, rated insulation voltage value, volume decision by capacitor C n_2.Because n2 capacitor C n_2 is generally the pico farad magnitude, puncture voltage is also little at the electric capacity volume of kilovolt magnitude, and directly ground connection can be reduced influencing each other of each inter-stage, is convenient to regulate.
Claims (2)
1, a kind of switching circuit of high speed and high pressure is based on multistage field-effect transistor, abbreviates that field effect transistor is formed by connecting as, is characterised in that its formation comprises:
The 1st grade is made of the 1st field effect transistor, the 11st resistance, the 12nd resistance, the 13rd resistance, the 11st electric capacity;
The 2nd grade is made of the 2nd field effect transistor, the 21st resistance, the 22nd resistance, the 23rd resistance, the 21st electric capacity, the 22nd electric capacity;
3rd level is identical with the 2nd grade to the structure of n level, and promptly the n level is made of n field effect transistor, n1 resistance, n2 resistance, n3 resistance, n1 electric capacity, n2 electric capacity, the concrete annexation of elements at different levels:
The 1st grade: the grid of the 1st field effect transistor links to each other with first end of the 13rd resistance and the input of input signal, the second end ground connection of the 13rd resistance; The source ground of the 1st field effect transistor; First end of the 21st resistance of first end of the drain electrode of the 1st field effect transistor and the 11st electric capacity, second end of the 11st resistance and the 2nd grade links to each other, second end of the 11st electric capacity links to each other with second end of the 12nd resistance and links to each other with the source electrode of the 2nd grade the 2nd field effect transistor, the first end ground connection of the 12nd resistance, the first termination high voltage input terminal of the 11st resistance;
The 2nd grade: the grid of the 2nd field effect transistor links to each other the first termination ground wire of the 22nd electric capacity with second end of the 23rd resistance, second end of the 22nd electric capacity and first end of the third level the 32nd electric capacity; The source electrode of the 2nd field effect transistor links to each other and links to each other with the 11st electric capacity second end of prime and second end of the 12nd resistance with first end of the 23rd resistance, first end of the 22nd resistance, and second end of the 22nd resistance links to each other with second end of the 21st electric capacity and links to each other with the source electrode of the 3rd field effect transistor of 3rd level; Second end of the drain electrode of the 2nd field effect transistor and the 21st resistance, first end of the 21st electric capacity link to each other and link to each other with first end of the 31st resistance of 3rd level, and first end of the 21st resistance links to each other with the leakage level of the 1st grade of the 1st field effect transistor;
The i level: the grid of i field effect transistor links to each other with second end of second end of i3 resistance, i2 electric capacity and first end of next stage (i+1) 2 electric capacity, and first end of i2 electric capacity links to each other with the grid of prime (i-1) field effect transistor; The source electrode of i field effect transistor links to each other and links to each other with second end of prime (i-1) 1 electric capacity and second end of (i-1) 2 resistance with first end of first end of i3 resistance, i2 resistance, and second end of i2 resistance links to each other with second end of i1 electric capacity and links to each other with the source electrode of (i+1) field effect transistor of next stage; The drain electrode of i field effect transistor links to each other with first end of second end of i1 resistance, i1 electric capacity and links to each other with first end of (i+1) 1 resistance of next stage, first end of i1 resistance links to each other with the leakage level of prime (i-1) field effect transistor, and wherein the span of i is 3≤i≤(n-1);
The annexation of last each element of n level: the grid of n field effect transistor links to each other with second end of n3 resistance, second end of n2 electric capacity, and first end of n2 electric capacity links to each other with the grid of prime (n-1) field effect transistor; The source electrode of n field effect transistor links to each other and links to each other with second end of prime (n-1) 1 electric capacity and second end of (n-1) 2 resistance with first end of first end of n3 resistance, n2 resistance, and second end of n2 resistance links to each other with second end of n1 electric capacity and constitutes the output of this switching circuit; The drain electrode of n field effect transistor links to each other with second end of n1 resistance, first end of n1 electric capacity, and first end of n1 resistance links to each other with the leakage level of prime (n-1) field effect transistor.
2, a kind of switching circuit of high speed and high pressure is characterised in that its formation comprises:
The 1st grade is made of the 1st field effect transistor, the 11st resistance, the 12nd resistance, the 13rd resistance, the 11st electric capacity;
The 2nd grade is made of the 2nd field effect transistor, the 21st resistance, the 22nd resistance, the 23rd resistance, the 21st electric capacity, the 22nd electric capacity;
3rd level is identical with the 2nd grade to the structure of n level, and promptly the n level is made of n field effect transistor, n1 resistance, n2 resistance, n3 resistance, n1 electric capacity, n2 electric capacity, the concrete annexation of elements at different levels:
The 1st grade: the grid of the 1st field effect transistor links to each other with first end of the 13rd resistance and the input of input signal, the second end ground connection of the 13rd resistance; The source ground of the 1st field effect transistor; First end of the 21st resistance of first end of the drain electrode of the 1st field effect transistor and the 11st electric capacity, second end of the 11st resistance and the 2nd grade links to each other, second end of the 11st electric capacity links to each other with second end of the 12nd resistance and links to each other with the source electrode of partial the 2nd field effect transistor, the first end ground connection of the 12nd resistance, the first termination high voltage input terminal of the 11st resistance;
The 2nd grade: the grid of the 2nd field effect transistor links to each other with second end of the 23rd resistance, second end of the 22nd electric capacity, the first end ground connection of the 22nd electric capacity; The source electrode of the 2nd field effect transistor links to each other and links to each other with the 11st electric capacity second end of prime and second end of the 12nd resistance with first end of the 23rd resistance, first end of the 22nd resistance, and second end of the 22nd resistance links to each other with second end of the 21st electric capacity and links to each other with the source electrode of the 3rd field effect transistor of 3rd level; Second end of the drain electrode of the 2nd field effect transistor and the 21st resistance, first end of the 21st electric capacity link to each other and link to each other with first end of the 31st resistance of 3rd level, and first end of the 21st resistance links to each other with the leakage level of the 1st grade of the 1st field effect transistor;
The i level: the grid of i field effect transistor links to each other with second end of i3 resistance, second end of i2 electric capacity, the direct ground connection of first end of i2 electric capacity; The source electrode of i field effect transistor links to each other and links to each other with second end of prime (i-1) 1 electric capacity and second end of (i-1) 2 resistance with first end of first end of i3 resistance, i2 resistance, and second end of i2 resistance links to each other with second end of i1 electric capacity and links to each other with the source electrode of (i+1) field effect transistor of next stage; The drain electrode of i field effect transistor links to each other with first end of second end of i1 resistance, i1 electric capacity and links to each other with first end of (i+1) 1 resistance of next stage, first end of i1 resistance links to each other with the leakage level of prime (i-1) field effect transistor, and wherein the span of i is 3≤i≤(n-1);
The annexation of last each element of n level: the grid of n field effect transistor links to each other with second end of n3 resistance, second end of n2 electric capacity, the direct ground connection of first end of n2 electric capacity; The source electrode of n field effect transistor links to each other and links to each other with second end of prime (n-1) 1 electric capacity and second end of (n-1) 2 resistance with first end of first end of n3 resistance, n2 resistance, and second end of n2 resistance links to each other with second end of n1 electric capacity and constitutes the output of this switching circuit; The drain electrode of n field effect transistor links to each other with second end of n1 resistance, first end of n1 electric capacity, and first end of n1 resistance links to each other with the leakage level of prime (n-1) field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101120251A CN100452653C (en) | 2005-12-27 | 2005-12-27 | High-speed high-voltage switch circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101120251A CN100452653C (en) | 2005-12-27 | 2005-12-27 | High-speed high-voltage switch circuit |
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| CN1794581A CN1794581A (en) | 2006-06-28 |
| CN100452653C true CN100452653C (en) | 2009-01-14 |
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| CNB2005101120251A Expired - Fee Related CN100452653C (en) | 2005-12-27 | 2005-12-27 | High-speed high-voltage switch circuit |
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| CN102437843B (en) * | 2011-11-30 | 2013-10-16 | 中国科学院微电子研究所 | High Voltage Switching Circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367421A (en) * | 1980-04-21 | 1983-01-04 | Reliance Electric Company | Biasing methods and circuits for series connected transistor switches |
| US4692643A (en) * | 1983-10-28 | 1987-09-08 | Hitachi, Ltd. | Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series |
| US4751408A (en) * | 1985-09-06 | 1988-06-14 | Thomson-Csf | Voltage-switching device |
| US5148064A (en) * | 1990-03-16 | 1992-09-15 | Merlin Gerin | Medium voltage static switch |
| CN2852531Y (en) * | 2005-12-27 | 2006-12-27 | 中国科学院上海光学精密机械研究所 | High-speed high-voltage switch |
-
2005
- 2005-12-27 CN CNB2005101120251A patent/CN100452653C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4367421A (en) * | 1980-04-21 | 1983-01-04 | Reliance Electric Company | Biasing methods and circuits for series connected transistor switches |
| US4692643A (en) * | 1983-10-28 | 1987-09-08 | Hitachi, Ltd. | Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series |
| US4751408A (en) * | 1985-09-06 | 1988-06-14 | Thomson-Csf | Voltage-switching device |
| US5148064A (en) * | 1990-03-16 | 1992-09-15 | Merlin Gerin | Medium voltage static switch |
| CN2852531Y (en) * | 2005-12-27 | 2006-12-27 | 中国科学院上海光学精密机械研究所 | High-speed high-voltage switch |
Non-Patent Citations (1)
| Title |
|---|
| Stacking power MOSFETs for useinhighspeedinstrumentation. R. J. Baker , B. P. Johnson.Review of Scientific Instruments,Vol.63 No.12. 1992 * |
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| CN1794581A (en) | 2006-06-28 |
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