CN100446171C - Field emission light source and backlight module of using the light source - Google Patents
Field emission light source and backlight module of using the light source Download PDFInfo
- Publication number
- CN100446171C CN100446171C CNB2004100918132A CN200410091813A CN100446171C CN 100446171 C CN100446171 C CN 100446171C CN B2004100918132 A CNB2004100918132 A CN B2004100918132A CN 200410091813 A CN200410091813 A CN 200410091813A CN 100446171 C CN100446171 C CN 100446171C
- Authority
- CN
- China
- Prior art keywords
- light source
- field emission
- substrate
- emission light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention relates to a field emission light source which comprises a base, a conducting cathode, an anode layer, a fluorescent layer, an insulating layer and a plurality of electron emitters, wherein the base has a smooth surface; the conducting cathode is formed on the surface of the base; a definite distance exists between the anode layer and the conducting cathode, and a vacuum inner space is formed; the fluorescent layer is arranged on the surface of the anode layer and emits visible light when bombarded by electrons; the insulating layer is positioned in the vacuum inner space and arranged on the conducting cathode; the electron emitters are connected with the insulating layer and used for emitting electrons; each electron emitter has a solid structure.
Description
[technical field]
The present invention is about a kind of light source, particularly about a kind of field emission light source and the module backlight that adopts this light source.
[background technology]
The artificial light light source generally can be divided into incandescent lamp, discharge lamp and solid state light emitter, comprises incandescent lamp, fluorescent lamp, light-emitting diode (Light Emitting Diode, LED), Halogen lamp LED, high-voltage gas discharging light (High Intensity Discharge, various lighting sources such as HID).Wherein, incandescent lamp is that tungsten filament energising back heating is luminous, produces a large amount of heats simultaneously, its luminous efficiency lower (about 8-15 lumens/watt), and brightness is limited, generally is used for the daily life illumination; Fluorescent lamp adopts the discharge excitation mercuryvapour to send ultraviolet ray and gets to and send visible light on the fluorescent material, generally be used for common daily life illumination, its advantage is luminous efficiency height (reaching 80 lumens/watt), and shortcoming is to contain mercury, to environment and human body harmful, thereby be not suitable for environmental requirement; LED is a kind of solid state light emitter, comprise various red-light LEDs, yellow light LED, blue-ray LED and white light LEDs, its advantage comprises that reaction speed is fast, volume is little, pollution-free, shortcoming is luminous efficiency low (about 20-30 lumens/watt), is applied to room light, ornamental festoon lamp etc. at present; Halogen lamp LED and HID lamp are the main flows of present auto bulb, HID lamp especially, and it can send the light (colour temperature of HID lamp about 4 of colour temperature near sunlight on daytime, 300K-10,000K, sunlight colour temperature 6,000K), and HID has farther advantages such as sight line than Halogen lamp LED, and still, it is 23 that HID needs low voltage transition, 000 volt of high voltage, excite xenon to send arclight, voltage is stabilized in 8,000 volts then, it is luminous to continue the supply Xe lamp bulb, therefore, it need cooperate special voltage current conversion equipment to work, and for example United States Patent (USP) the 6th, 710, No. 551 and 6,781, the HID light source of No. 327 announcements.
Disclosed Chinese invention patent application on January 17 calendar year 2001 discloses a kind of field emission white light source that uses CNT (carbon nano-tube) for No. 00107813.5.
See also Fig. 1, this white light source mainly comprises: as the metallic film 11 of negative electrode, this metallic film 11 is arranged on the infrabasal plate 10, be formed on the conducting polymer thin film pattern 12 on the metallic film 11, the CNT (carbon nano-tube) 15 of hollow structure substantially vertically is cemented on the conducting polymer thin film pattern 12 and an end exposes the outside with emitting electrons, and the transparency electrode 17 with phosphor body 16, this transparency electrode 17 is arranged on a transparent upper 18 belows.During use, CNT (carbon nano-tube) 15 emitting electrons bombardment phosphor body, thus send visible light.Advantages such as this white light source based on the field emission has the energy conversion efficiency height, and luminous efficiency is higher, and is pollution-free.
Yet CNT (carbon nano-tube) is a hollow structure in the above-mentioned field emission light source, is subjected to the electric field action emitting electrons will make CNT (carbon nano-tube) produce distortion, and shortened its useful life.And, because CNT (carbon nano-tube) is to rely on adhesion to be fixed on the conducting polymer thin film, and it is again a hollow structure, so, when launching the electric field strength enhancing then and there, CNT (carbon nano-tube) might break away from conducting polymer thin film owing to electric field action power, damages thereby produce, and shortens the useful life of field emission light source.
[summary of the invention]
Short problem in useful life in order to overcome field emission light source in the prior art the invention provides long field emission light source in a kind of useful life.
The technical scheme that technical solution problem of the present invention is adopted is: a kind of field emission light source comprises that one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer, itself and this conductive cathode is separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and is arranged on this conductive cathode; And a plurality of electron emitters that are connected the insulating barrier place, in order to emitting electrons, this electron emitter is a solid construction, this electron emitter comprises a cylindrical base and a conical top, this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.
Another object of the present invention is to provide a kind of module backlight that adopts above-mentioned field emission light source.
Kind of the present invention module backlight, it comprises a field emission light source and a light guide plate that cooperates with this light source, this field emission light source comprises that one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer, itself and this conductive cathode is separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and is arranged on this conductive cathode; Be connected a plurality of electron emitters at insulating barrier place, in order to emitting electrons, this electron emitter is a solid construction, this electron emitter comprises a cylindrical base and a conical top, this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.
Compared to prior art, the electron emitter of field emission light source of the present invention is a solid construction, and this electron emitter comprises a cylindrical base and a conical top, and this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.The electron emitter of this field emission light source is subjected to the electric field action emitting electrons also can not produce deformation, even electric field strength strengthens, electron emitter can not damage yet.
[description of drawings]
Fig. 1 is a kind of structural representation of prior art field emission light source.
Fig. 2 is the structural representation of field emission light source first execution mode of the present invention.
Fig. 3 is the enlarged diagram of electron emitter among Fig. 2.
Fig. 4 is the structural representation of field emission light source second execution mode of the present invention.
Fig. 5 is the schematic perspective view of the present invention's module backlight.
[embodiment]
Seeing also Fig. 2, is the structural representation of field emission light source first execution mode of the present invention.This field emission light source 2 comprises a non metallic substrate 20, stacks gradually to be formed on substrate 20 lip-deep nucleating layers 21, a conductive layer 22 and insulating barrier 23; A plurality of nanoelectronic emitter 24 regular arrangements are formed on this insulating barrier 23 surfaces; One transparency carrier 27, itself and described nanoelectronic emitter 24 keep at a certain distance away, and an anode layer 26 is formed on the surface of this transparency carrier 27 near this electron emitter 24, and a fluorescent layer 25 is formed on the surface of this anode layer 26; In addition, a plurality of sidewalls 28 are with these field emission illuminating light source 2 sealings and support described transparency carrier 27, and form an inner vacuum space.
Described nucleating layer 21 is made up of silicon, and thickness is extremely thin, and preferred thickness is below 1 micron.Because this substrate 20 is nonmetallic materials, is arranged to the formation that stratum nucleare 21 helps conductive layer 22, is conductive layer 22 sedimentary condition is provided.This nucleating layer 21 is to select layer.The material of this conductive layer 22 is a kind of in copper, silver or the gold.The material of this insulating barrier 23 can be carborundum.
Please together consulting Fig. 3, is the enlarged diagram of electron emitter among Fig. 1.Nanoelectronic emitter 24 is solid constructions.As shown in Figure 3, nanoelectronic emitter 24 is to be made of a base portion 241 and a top 242 respectively, and this base portion 241 is columns, and this top 242 is cone points, and this base portion 241 is identical with the material of this insulating barrier 23.The material at this top 242 is molybdenums.Base portion 241 is that diameter d 2 is the cylinder of 10-100 nanometer; 242 bottoms, top equate with cylinder diameter than major diameter, are d2, and the less diameter d 1 in top is in the 0.5-10 nanometer range; The base portion 241 of nanoelectronic emitter 24 highly is in the 100-2000 nanometer range, and top 242 highly is in the 10-200 nanometer range.
Described fluorescent layer 25 includes fluorescent material, can produce visible light during by electron bombard.Described anode layer 26 is made up of ITO (Indium Tin Oxide, indium tin oxide) conductive film.Described transparency carrier 27 is to be made by clear glass.
Seeing also Fig. 4, is the structural representation of field emission light source second execution mode of the present invention.The difference of the present embodiment and first execution mode is: this substrate 30 is metal material, and conductive layer 32 is formed in the substrate 30, and nucleating layer 31 is formed on the conductive layer 32.So being provided with, is because substrate 30 is metal material, and conductive layer 32 also is a metal material, more easily is deposited in the substrate 30, and being arranged to stratum nucleare 31 on conductive layer 32 is in order to make silicon carbide layer 33 be easy to deposition.
The electron emitter of field emission light source of the present invention is a solid construction, and its base portion is an insulating material, the top is a metal material, when applying electric field, institute's electrons excited arrives the top by base portion, will strengthen electrical potential difference, polyelectron is launched, solid construction can make electron emitter be difficult for producing distortion, and is not fragile, can prolong its useful life.
Hereinafter will narrate the module backlight that adopts field emission light source of the present invention.
Seeing also Fig. 5, is module schematic diagram backlight of the present invention.This module 4 backlight comprises an aforementioned field transmitting illuminant 2 and a light guide plate 40, and this field emission light source 2 is arranged on a jiao of light guide plate 40, and this light guide plate 40 comprises an exiting surface 41, the a plurality of arcuate structures 43 of tool on the exiting surface 41, more away from light source 2, apart from littler, promptly density is bigger between this arcuate structure 43.
Adopt the module backlight of field emission light source of the present invention, because of the brightness that field emission light source sent exceeds 10 to 1000 times compared to organic electroluminescent LED or cold cathode ray tube, so this module backlight adopts this light source can improve overall brightness.
Claims (12)
1. field emission light source, it comprises that one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer and this conductive cathode are separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and is arranged on this conductive cathode; And be connected a plurality of electron emitters at insulating barrier place, in order to emitting electrons; It is characterized in that: this electron emitter is a solid construction, and this electron emitter comprises a cylindrical base and a conical top, and this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.
2. field emission light source as claimed in claim 1, it is characterized in that: the altitude range of this base portion is 100～2000 nanometers, the diameter range of base portion is 10～100 nanometers, and the altitude range at this top is 10～200 nanometers, and the upper bottom surface diameter range at top is 0.5～10 nanometer.
3. field emission light source as claimed in claim 1 is characterized in that: this substrate is nonmetallic materials, also comprises a nucleating layer between this substrate and this conductive cathode, and this nucleating layer is made up of silicon materials.
4. field emission light source as claimed in claim 1 is characterized in that: this substrate is a metal material, also comprises a nucleating layer between this conductive cathode and this insulating barrier, and this nucleating layer is made up of silicon materials.
5. module backlight, it comprises a field emission light source and a light guide plate that cooperates with this light source, this field emission light source comprises: one has the substrate of a flat surface; One is formed on the conductive cathode of this substrate surface; One anode layer, itself and this conductive cathode is separated by a distance and form the inner space of a vacuum; One fluorescent layer is arranged on this anode layer surface, can send visible light during by electron bombard; One insulating barrier is positioned at the inner space of described vacuum, and near this conductive cathode; Be connected a plurality of electron emitters at insulating barrier place, in order to emitting electrons; It is characterized in that: this electron emitter is a solid construction, and this electron emitter comprises a cylindrical base and a conical top, and this base portion links to each other with this insulating barrier, and the material of this base portion is a carborundum, and the material at this top is a molybdenum.
6. module backlight as claimed in claim 5 is characterized in that: the altitude range of the base portion of this electron emitter is in 100～2000 nanometers, and diameter range is in 10～100 nanometers; The altitude range at the top of this electron emitter is 10～200 nanometers, and the upper bottom surface diameter range at top is 0.5～10 nanometer.
7. module backlight as claimed in claim 5 is characterized in that: this substrate is nonmetallic materials, also comprises a nucleating layer between this substrate and the conductive cathode, and this nucleating layer is made up of silicon materials.
8. module backlight as claimed in claim 5 is characterized in that: this substrate is a metal material, also comprises a nucleating layer between this conductive cathode and this insulating barrier, and this nucleating layer is made up of silicon materials.
9. module backlight as claimed in claim 5 is characterized in that: the thickness of this nucleating layer is below 1 micron.
10. module backlight as claimed in claim 5 is characterized in that: this field emission light source is arranged on a jiao of light guide plate.
11. module backlight as claimed in claim 10 is characterized in that: this light guide plate comprises an exiting surface, has a plurality of arcuate structures on this exiting surface.
12. module backlight as claimed in claim 11 is characterized in that: this arcuate structure is more away from this field emission light source, and the spacing between this arcuate structure is more little.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100918132A CN100446171C (en) | 2004-12-22 | 2004-12-22 | Field emission light source and backlight module of using the light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100918132A CN100446171C (en) | 2004-12-22 | 2004-12-22 | Field emission light source and backlight module of using the light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1797690A CN1797690A (en) | 2006-07-05 |
| CN100446171C true CN100446171C (en) | 2008-12-24 |
Family
ID=36818629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100918132A Expired - Fee Related CN100446171C (en) | 2004-12-22 | 2004-12-22 | Field emission light source and backlight module of using the light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100446171C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103426718B (en) * | 2013-03-25 | 2016-08-10 | 上海显恒光电科技股份有限公司 | Flat-panel radiating light source 3D print system and light source thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052652A (en) * | 1999-06-18 | 2001-02-23 | Cheol Jin Lee | White light source and its manufacture |
| US6583555B2 (en) * | 2000-08-25 | 2003-06-24 | Fuji Photo Film Co., Ltd. | Flat fluorescent lamp and optical fixing device |
| CN1467785A (en) * | 2002-07-12 | 2004-01-14 | 鸿富锦精密工业（深圳）有限公司 | Field emission display device |
| CN1467783A (en) * | 2002-07-12 | 2004-01-14 | �踻�����ܹ�ҵ(����)����˾ | Field emission display device |
-
2004
- 2004-12-22 CN CNB2004100918132A patent/CN100446171C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052652A (en) * | 1999-06-18 | 2001-02-23 | Cheol Jin Lee | White light source and its manufacture |
| US6583555B2 (en) * | 2000-08-25 | 2003-06-24 | Fuji Photo Film Co., Ltd. | Flat fluorescent lamp and optical fixing device |
| CN1467785A (en) * | 2002-07-12 | 2004-01-14 | 鸿富锦精密工业（深圳）有限公司 | Field emission display device |
| CN1467783A (en) * | 2002-07-12 | 2004-01-14 | �踻�����ܹ�ҵ(����)����˾ | Field emission display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1797690A (en) | 2006-07-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2375435B1 (en) | Field emission cathode | |
| US7663298B2 (en) | Light source apparatus using field emission cathode | |
| CN102333392A (en) | Field emission illumination light source | |
| CN100555557C (en) | Field emission illuminating light source and preparation method thereof | |
| CN100530519C (en) | Field emission light source and backlight module of using the light source | |
| CN100446171C (en) | Field emission light source and backlight module of using the light source | |
| CN100426450C (en) | Field emission light source and backlight module of using the light source | |
| TWI324024B (en) | Field emission type light source | |
| US9288885B2 (en) | Electrical power control of a field emission lighting system | |
| CN100561633C (en) | The field emission light-emitting lighting source | |
| CN100530517C (en) | Field emission illuminating light source | |
| CN100583384C (en) | Lighting source | |
| CN100454479C (en) | Field emitting lighting light source | |
| US7290916B2 (en) | Field emission light source and a related backlight device | |
| US7489069B2 (en) | Field emission light source and a related backlight device | |
| EP2339610B1 (en) | Reflective anode structure for a field emission lighting arrangement | |
| CN100530518C (en) | Field emission illuminating light source | |
| TWI305655B (en) | Field emission type light source and backlight module using the same | |
| RU2505744C2 (en) | Electric lighting system (versions) | |
| TWI323477B (en) | Field emission type light source and method for making the same | |
| TWI320192B (en) | Field emission type light source | |
| KR20020033949A (en) | Flat type lighting device using the nanotubes | |
| EP2472552A1 (en) | Field emission lighting arrangement | |
| CN103730329A (en) | Field emission light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081224 Termination date: 20171222 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |