CN100442642C - High output voltage transfer device - Google Patents
High output voltage transfer device Download PDFInfo
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- CN100442642C CN100442642C CNB2004100024093A CN200410002409A CN100442642C CN 100442642 C CN100442642 C CN 100442642C CN B2004100024093 A CNB2004100024093 A CN B2004100024093A CN 200410002409 A CN200410002409 A CN 200410002409A CN 100442642 C CN100442642 C CN 100442642C
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Abstract
The present invention relates to a transfer device of high output voltage, which comprises an input stage circuit, a current mirror circuit and a circuit switch, wherein the input stage circuit is provided with a primary switch and a secondary switch; the current mirror circuit is provided with a third switch and a fourth switch; the primary switch, the current switch and a third switch form a current path. When the third current of the current mirror circuit is conducted, the current path generates direct current. Besides, the fourth switch of the current mirror circuit generates the current of a current mirror so as to close the current switch through the current of the current mirror. Therefore, the transfer device can not generate direct current.
Description
Technical field
The invention relates to a kind of high output voltage transfer device, refer to a kind of high output voltage transfer device that is applicable to the high voltage conversion especially.
Background technology
High output voltage transfer device normally is used for the control signal of low pressure is converted to the control signal of high pressure, for example: when being applied in LCD, usually need 20～40 volts high voltage to open thin-film transistor, yet its input signal is generally 3 volts, perhaps at its inner for example operating voltage of 1 volt that only provides usually of some logical circuits, but the operating voltage of connected external circuit needs 5 volts, then needs to see through high output voltage transfer device this moment and transfers.
Fig. 1 shows existing high output voltage transfer schematic representation of apparatus, and it is mainly to comprise 11,12, two N types of two P type metal-oxide semiconductor (MOS) MOS13,14 and rp units 15.P type MOS11,12 source electrode provide high-tension high-voltage level voltage node HVDD to be connected with one, and N type MOS13,14 source electrode be ground connection (GND) then.The drain electrode of P type MOS11 is connected with the drain electrode of N type MOS13, the drain electrode of P type MOS12 is connected with the drain electrode of N type MOS14, the drain electrode of P type MOS11 and N type MOS13 all is connected to node NDl, the drain electrode of P type MOS12 and N type MOS14 all is connected to output 162, node NDl also is connected with the grid of P type MOS11 and P type MOS12,161 of Input voltage terminals directly are connected with the grid of N type MOS13, and see through rp unit 15 and be connected with the grid of N type MOS14, and above-mentioned P type MOS11 is with P type MOS12 and become a current mirroring circuit.
When Input voltage terminal 161 input one low-voltages (for example: 0 volt), then will make N type MOS13 close, N type MOS14 conducting, P type MOS11 to N type MOS13 current path also will not have electric current because of the cause that N type MOS13 closes in addition, hereat on P type MOS12, also do not have image current and produce, so the current potential of output 162 is drawn as electronegative potential (0 volt).When Input voltage terminal 161 input one high voltages (for example: 5 volts), then N type MOS13 conducting, N type MOS14 closes, because the cause of N type MOS13 conducting, to the current path of N type MOS13, produce an electric current at P type MOS11, make P type MOS12 go up and produce image current.Because N type MOS14 closes, therefore the image current that is produced by P type MOS12 will make output 162 become the voltage level of HVDD (for example: 15 volts).
Yet, the high output voltage transfer device of this kind way is because the problem that high voltage device takes up room, make that the shared area of integrated circuit is less, but it can produce comparatively serious direct current power consumption situation, that is the direct current that is produced on the active load paths in current mirroring circuit.
Fig. 2 shows the high output voltage transfer schematic representation of apparatus of present solution foregoing circuit, it is to utilize dual current mirror to produce differential amplifying signal, can produce the shortcoming of direct current electric leakage to improve existing high output voltage transfer installation drawing 1, but minimum needs are used eight high pressure manufacturing process elements when adopting this kind circuit as high output voltage transfer device, and this still has on practicality and improves the space.
Summary of the invention
The objective of the invention is in that a kind of high output voltage transfer device is provided, so that can adopt less high pressure manufacturing process element to reach, so that circuit area diminishes.
The objective of the invention is is providing a kind of high output voltage transfer device, so that the situation that can make high output voltage transfer device not have the direct current power consumption when static state produces.
According to characteristic of the present invention, provide a kind of high output voltage transfer device, it comprises: an input stage circuit, be to have one first switch and a second switch, and this input stage circuit receives a low voltage signal, come this first switch of conducting or this second switch so that see through this low voltage signal, wherein, the not conducting simultaneously of this first switch and this second switch; One current mirroring circuit, be to have one the 3rd switch and one the 4th switch, and this current mirroring circuit is connected with a high level voltage source, wherein, be to be connected with a current path switch between the 3rd switch and this first switch, so that the 3rd switch, this current path switch and this first switch form a current path, the 4th switch is directly to be connected with this second switch, so that drive the 3rd switch and the 4th switch of this current mirroring circuit according to the conducting of this first switch or this second switch, to export a high level voltage signal, and produce a mirror currents, control this current path switch so that see through this mirror currents, to close the electric current of this current path.
According to another characteristic of the present invention, provide a kind of high output voltage transfer device, it comprises: an input stage circuit, be to have one first switch and a second switch, and this input stage circuit is to be connected with one first voltage node, control this first switch or this second switch so that see through the voltage signal of this first voltage node input, wherein, the not conducting simultaneously of this first switch and this second switch; One current mirroring circuit, be to have one the 3rd switch and one the 4th switch, and this current mirroring circuit is connected with one second voltage node, this current mirroring circuit is to be connected with this input stage circuit, and has a current switch between this current mirroring circuit and this input stage circuit, so that control the 3rd switch and the 4th switch conduction of this current mirroring circuit or close according to the conducting of this first switch or this second switch, to export a high level voltage signal, wherein, be to produce a direct current electric current and a mirror currents when the 3rd switch and the 4th switch conduction, control this current switch so that see through this mirror currents, to end this direct current.
Description of drawings
Fig. 1 is existing high output voltage transfer schematic representation of apparatus;
Fig. 2 is another schematic diagram of existing high output voltage transfer device;
Fig. 3 is the circuit diagram of a preferred embodiment of the present invention;
Fig. 4 is the circuit diagram of another preferred embodiment of the present invention;
Fig. 5 is the circuit diagram of another preferred embodiment of the present invention;
Fig. 6 is the circuit diagram of a preferred embodiment more of the present invention;
Fig. 7 shows direct current power consumption schematic diagram.
Embodiment
The preferred embodiment of relevant high output voltage transfer device of the present invention, the circuit diagram that please show with reference to Fig. 3 earlier, it is mainly by p type field effect transistor 31,32,33,36, n type field effect transistor 34,35,37 and main circuit element such as rp unit 393 form, wherein, P type MOS31, the 32nd, form a current mirroring circuit 38.
Above-mentioned P type MOS31,32,36 source electrode are connected with a high-voltage level voltage node HVDD, are connected with a high level voltage source (for example: 40 volts) so that see through high level voltage node HVDD.N type MOS34,35,37 source electrode is connected with a low voltage level voltage node VSS, and it is a ground voltage supplies.
The drain electrode of N type MOS37 is to be connected with the drain electrode of P type MOS36, and output 392 is connected with the drain electrode of N type MOS37 and P type MOS36 respectively.Be to have P type MOS33 between N type MOS34 and P type MOS31, the drain electrode of the source electrode of P type MOS33 and P type MOS31 is connected to node A1, and the source electrode of P type MOS33 still is connected with node A1 except the grid with P type MOS32 is connected.The grid of the drain electrode of the drain electrode of P type MOS33, N type MOS34 and P type MOS36 is connected to node A3.The grid of the drain electrode of the drain electrode of N type MOS35 and P type MOS32 and P type MOS33 is connected to node A2.The grid of N type MOS34 is to be connected with signal input end 391, to receive a low-voltage control input signals (for example: 2 volts).It is coupled to have more a rp unit 393 on signal input end 391, so that the voltage control input signal is carried out anti-phase conversion, to be provided anti-phase low-voltage control input signals to N type MOS35,37 grid by rp unit output 3931.
With above-mentioned circuit framework, and when the low-voltage control input signals is electronegative potential (for example: 0V), N type MOS34 is closed condition (OFF), N type MOS35, and 37 is conducting state (ON).Because, P type MOS31,33 and N type MOS34 on same current path, hereat N type MOS34 is for closing, P type MOS31 then, 33 also close, because P type MOS31 closes, so the voltage of node A1 is about 38 volts (HVDD-VT).And P type MOS32 and P type MOS31 form current mirroring circuit 38, and therefore when P type MOS31 closed, P type MOS32 also closed and no current mirror electric current.
Because N type MOS35 is a conducting state, therefore the voltage of node A2 is close to 0 volt, and make the P type passage (p-channel) of P type MOS33 open, yet this moment, P type MOS33 and no current flow through, this moment but have the voltage of node A3 identical with the voltage of node A1, P type MOS33 no current is flow through, so the voltage of node A3 is about 38 volts, make P type MOS36 close, with output 392 output low level voltages (for example: 0 volt).
When the low-voltage control input signals is high potential (for example: 2V), N type MOS34 is a conducting state, N type MOS35, and 37 is closed condition.Because N type MOS34 conducting, therefore will there be a direct current current path to produce, that is the direct current P type MOS31 that will flow through, 33 and N type MOS34.P type MOS32 then produces a mirror currents so that the drain electrode (Drain end) of the N type MOS35 that closes is charged so that the voltage of node A2 by 0 volt toward rising, so that P type MOS33 is closed.When P type MOS33 closed, because N type MOS34 is conducting, so the voltage of node A3 was electronegative potential, and made P type MOS36 conducting, with output 392 output high level voltages (for example: 40 volts).
Fig. 4 shows the circuit diagram of another embodiment of the present invention, and it is by P type MUS41,42,43, N type MOS44,45 and main element such as rp unit 46 form, wherein, P type MOS41, the 42nd, form a current mirroring circuit 47.The circuit of Fig. 4 is similar with Fig. 3, but be directly output 482 to be arranged between the drain electrode of P type MOS43 and N type MOS44 among Fig. 4, that is the output 392 among Fig. 3 is pulled out by the output stage that P type MOS36 and N type MOS37 are formed, and the output of Fig. 4 does not then have output-stage circuit.
Fig. 5 shows the circuit diagram of another embodiment of the present invention, it is by P type MOS51,52,53, N type MOS54,55,56,57 and element such as rp unit 58 form, Fig. 5 is similar with the shown circuit operation of Fig. 4, but Fig. 4 be will input the low-voltage control signal upwards transfer to positive high voltage (for example: 40V), Fig. 5 be will input the low-voltage control signal transfer to downwards negative high voltage (for example :-40V), so P type MOS52 among Fig. 5,53 as the switch element of accepting input signal control, and N type MOS54 is then as control N type MOS56, the control switch of 57 current mirroring circuits of forming.
Fig. 6 shows the circuit diagram of an embodiment more of the present invention, it is by P type MOS61,62, N type MOS63,64,65 and element such as rp unit 66 form, the circuit that Fig. 6 shows is that the circuit that shows with Fig. 4 is similar, but, the high voltage of the high voltage of Fig. 6 institute desire output and the desire output of Fig. 4 institute is anti-phase, therefore corresponding exchange is carried out in relevant connections such as these MOS and operating voltage.
Fig. 7 shows direct current power consumption schematic diagram of the present invention, it is to show that the situation of direct current power consumption only just can take place in transition moment high output voltage transfer device of the present invention, and the situation that does not have the direct current power consumption when stable state produces, therefore not only having improved existing employing current mirror produces as the situation that high output voltage transfer device has serious direct current power consumption, more reach and use less high pressure manufacturing process element (for example: 7, comprise output stage) to make that the area of integrated circuit is smaller.
By above explanation as can be known, the present invention mainly utilizes a plurality of MOS to form an input stage circuit, the MOS switch of one current mirroring circuit and a current path, wherein, input stage circuit is to receive the low-voltage input control signal, current mirroring circuit then is connected with high level voltage, so that input stage circuit is controlled its MOS switch conduction that comprises according to the low-voltage input control signal or is closed, with so the Control current mirror circuit whether produce mirror currents, and the MOS switch element that utilizes current path comes the direct current power consumption between close current mirror circuit and the input stage circuit, so that the situation that can make high output voltage transfer device not have the direct current power consumption when static state produces, and makes circuit area diminish.
The foregoing description only is to give an example for convenience of description, and the rights protection scope that the present invention advocated should be as the criterion so that claim is described certainly, but not only limits to the foregoing description.
Claims (13)
1. high output voltage transfer device, be voltage level conversion with an input signal to different voltage levels, it is characterized in that this device comprises:
One input stage circuit, have one first switch and a second switch, and this input stage circuit receives a low voltage signal as this input signal, come this first switch of conducting or this second switch so that see through this low voltage signal, wherein, not conducting simultaneously of this first switch and this second switch;
One current mirroring circuit is to have one the 3rd switch and one the 4th switch, and this current mirroring circuit is connected with a high level voltage source, wherein,
Be connected with a current path switch between the 3rd switch and this first switch, so that the 3rd switch, this current path switch and this first switch form a current path, the 4th switch directly is connected with this second switch, so that drive the 3rd switch and the 4th switch of this current mirroring circuit according to the conducting of this first switch or this second switch, to export a high level voltage signal between an output of this first switch and this current path switch room, and produce a mirror currents, control this current path switch to see through this mirror currents, and close the electric current of this current path; And
One output-stage circuit, it has one the 5th switch and one the 6th switch, so that seeing through the 5th switch to be connected with this current mirroring circuit and this input stage circuit respectively with the 6th switch, to export this high level voltage signal, the 5th switch is a p type field effect transistor, the 6th switch is a n type field effect transistor, the grid of the 5th switch is connected to this output, the source electrode of the 5th switch is connected to this high level voltage source, the drain electrode of the 5th switch is connected to the drain electrode of the 6th switch, the grid of the 6th switch is connected to the grid of this second switch, and the source electrode of the 6th switch is connected to a ground connection node.
2. high output voltage transfer device as claimed in claim 1 is characterized in that described first switch and this second switch are n type field effect transistors.
3. high output voltage transfer device as claimed in claim 1 is characterized in that described the 3rd switch, the 4th switch and this current path switch are p type field effect transistors.
4. high output voltage transfer device, be voltage level conversion with an input signal to different voltage levels, it is characterized in that this device comprises:
One input stage circuit, have one first switch and a second switch, and this input stage circuit is to be connected with one first voltage node, control this first switch or this second switch so that see through this input signal of this first voltage node input, wherein, not conducting simultaneously of this first switch and this second switch;
One current mirroring circuit, this current mirroring circuit is connected with one second voltage node and a current switch, have one the 3rd switch and one the 4th switch, wherein this current switch is connected between this input stage circuit and this current mirroring circuit, so that control the 3rd switch and the 4th switch conduction of this current mirroring circuit or close according to the conducting of this first switch or this second switch, export a high level voltage signal with the output between this first switch and this current switch
Wherein, when the 3rd switch and the 4th switch conduction, produce a direct current electric current and a mirror currents, control this current switch, to end this direct current so that see through this mirror currents; And
One output-stage circuit, this output-stage circuit has one the 5th switch and one the 6th switch, so that seeing through the 5th switch to be connected with this current mirroring circuit and this input stage circuit respectively with the 6th switch, to export this high level voltage signal, the 5th switch is a p type field effect transistor, the 6th switch is a n type field effect transistor, the grid of the 5th switch is connected to this output, the source electrode of the 5th switch is connected to a high level voltage source, the drain electrode of the 5th switch is connected to the drain electrode of the 6th switch, the grid of the 6th switch is connected to the grid of this second switch, and the source electrode of the 6th switch is connected to a ground connection node.
5. high output voltage transfer device as claimed in claim 4 is characterized in that described direct current flows to this input stage circuit by this current mirroring circuit.
6. high output voltage transfer device as claimed in claim 4 is characterized in that described first switch, the 3rd switch and this current switch form a current path, and this direct current is to produce in this current path.
7. high output voltage transfer device as claimed in claim 6 is characterized in that, closes this current switch when this mirror currents produces, so that this direct current does not produce.
8. high output voltage transfer device as claimed in claim 4 is characterized in that this input signal that described first voltage node receives is a low level voltage signal.
9. high output voltage transfer device as claimed in claim 4 is characterized in that described second voltage node receives this high level voltage signal.
10. high output voltage transfer device as claimed in claim 4 is characterized in that described first switch and this second switch are n type field effect transistors.
11. high output voltage transfer device as claimed in claim 4 is characterized in that described the 3rd switch, the 4th switch and this current switch are p type field effect transistors.
12. high output voltage transfer device as claimed in claim 4 is characterized in that described first switch and this second switch are p type field effect transistors.
13. high output voltage transfer device as claimed in claim 4 is characterized in that described the 3rd switch, the 4th switch and this current switch are n type field effect transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100024093A CN100442642C (en) | 2004-01-29 | 2004-01-29 | High output voltage transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100024093A CN100442642C (en) | 2004-01-29 | 2004-01-29 | High output voltage transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1649245A CN1649245A (en) | 2005-08-03 |
| CN100442642C true CN100442642C (en) | 2008-12-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2004100024093A Expired - Fee Related CN100442642C (en) | 2004-01-29 | 2004-01-29 | High output voltage transfer device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469080A (en) * | 1994-07-29 | 1995-11-21 | Sun Microsytems, Inc. | Low-power, logic signal level converter |
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| US6480050B1 (en) * | 1999-09-09 | 2002-11-12 | Stmicroelectronics Limited | Level shifter with no quiescent DC current flow |
-
2004
- 2004-01-29 CN CNB2004100024093A patent/CN100442642C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5469080A (en) * | 1994-07-29 | 1995-11-21 | Sun Microsytems, Inc. | Low-power, logic signal level converter |
| CN1234584A (en) * | 1998-03-25 | 1999-11-10 | 日本电气株式会社 | Reference-voltage generating circuit providing stable output voltage |
| US6480050B1 (en) * | 1999-09-09 | 2002-11-12 | Stmicroelectronics Limited | Level shifter with no quiescent DC current flow |
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| Publication number | Publication date |
|---|---|
| CN1649245A (en) | 2005-08-03 |
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