CN100442547C - Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer - Google Patents
Gallium nitride system LED with growth under low-temperature and low-resistance P-shaped contact layer Download PDFInfo
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- CN100442547C CN100442547C CNB2004100739310A CN200410073931A CN100442547C CN 100442547 C CN100442547 C CN 100442547C CN B2004100739310 A CNB2004100739310 A CN B2004100739310A CN 200410073931 A CN200410073931 A CN 200410073931A CN 100442547 C CN100442547 C CN 100442547C
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Abstract
The present invention relates to a GaN system LED structure, which can grow an In1-yGayN low-resistivity p-type contacting layer at low temperature by doping the magnesium and the aluminium together. The present invention comprises a basal plate, a buffer layer, an n-type GaN layer, an active layer, a p-type covering layer and a p-type contacting layer. The present invention makes the magnesium (Mg) and the aluminum (Al) doped in the In1-yGayN to grow the p-type contacting layer with low resistivity. The present invention solves the problem of light absorption of the material of the p-type In1-yGayN contacting layer because of the doping of the magnesium and the aluminum. Finally, the present invention has the convenience of preparing the p-type contacting layer at low temperature, improves the whole electric characteristic, reduces the operating voltage of the whole assembly, reduces the electric power consumption when operating, and improves the good production rate.
Description
Technical field
The present invention relates to a kind of InGaN/gallium nitride multiple quantum trap structure light-emitting diode (InGaN/GaN MQW LEDs), particularly a kind ofly utilize that magnesium and aluminium are common to mix and can make low temperature growth InGaN (In
1-yGa
yN) the p type contact layer of low-resistance value.
Background technology
InGaN in the prior art/gallium nitride multiple quantum well structure (multiquantum well, MQW) light-emitting diode, the p type gallium nitride (GaN) that mainly utilizes the high temperature growth are as contact layer, and contact layer always is formed at active layers (luminescent layer) top usually.In actual manufacture process, find, high temperature growth contact layer, previous step low temperature growth active layers (luminescent layer) brilliant characteristic of heap of stone can not be kept, this effect, regularly arranged when crystalline substance promptly of heap of stone can not keep growing up not only makes the electric properties deteriorate of luminescent layer or conducts electricity the bad waste product that becomes, and then can influence whole assembly, must adopt high voltage is operating voltage, and the electrical power that the result consumes in the time of can making running increases.Therefore, before will overcoming, take off problem, still need a kind of new structure so that obtain low temperature growth low resistance p type contact layer.
Summary of the invention
Gallium nitride based multiple quantum well structure light-emitting diode problem in the prior art about aforementioned announcement the invention provides a kind of gallium nitride based multiple quantum well structure light-emitting diode, but the InGaN (In that utilizes magnesium and the common doping of aluminium and low temperature to grow up
1-yGa
yN) the p type contact layer of Cheng Changing.
Therefore primary and foremost purpose of the present invention is to make magnesium and the aluminium InGaN (In that mixes jointly
1-yGa
yN) resistance value of growth p type contact layer, the resistance value of more traditional p type gallium nitride contact layer is low.Reason is that the present invention with aluminium doping growth p type contact layer, can increase two-dimentional electric hole carrier (carrier) and mobility (mobility) thereof, and InGaN has than the lower energy gap of gallium nitride, so can reach this purpose.
Still a further object of the present invention is to improve the material generation extinction problem of p type contact layer.Generally speaking, p type contact layer is in active layers (luminescent layer) top, so p type contact layer extinction can cause gallium nitride based multiple quantum well structure light-emitting diode luminous efficiency to reduce.And but magnesium of the present invention and aluminium mix InGaN p type contact layer jointly because low temperature growth p type contact layer, make gallium nitride based material side direction growth speed reduce and reach the effect of surface roughening, and then reduce light by the probability of total reflection, to improve the assembly luminous efficiency.
Another object of the present invention is for after providing making active layers (luminescent layer), and low temperature is made the simplicity of p type contact layer step, and makes whole electrical characteristics improve, and can reduce the operating voltage of black box, and the electrical power that consumes during its running lowers, and reaches to improve to produce yield.Because p type contact layer growth temperature of the present invention, than prior art p type contact layer, be that material is come lowly with the gallium nitride, so from InGaN active layers (luminescent layer) to InGaN (In
1-yGa
yN) the p type contact layer of Cheng Changing all can be adopted same low temperature and grow up, and then protection InGaN luminescent layer, thereby improves the assembly whole lighting efficiency.
Description of drawings
Fig. 1 is first embodiment that has the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 2 is second embodiment that has the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 3 is the 3rd embodiment that has the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Fig. 4 is the 4th embodiment that has the LED structure with gallium nitride system of growth under low-temperature and low-resistance p type contact layer according to the present invention.
Among the figure
10 substrates, 11 resilient coatings
12n type gallium nitride layer 13 luminescent layers
14p type coating 15p type contact layer
16n type electrode layer 17p type electrode layer
20 substrates, 21 resilient coatings
22n type gallium nitride layer 23 luminescent layers
24p type coating 25p type contact layer
26n type electrode layer 27p type electrode layer
31 resilient coating 32n type gallium nitride layers
33 luminescent layers, 340 first coatings
342 second coating 35p type contact layers
36n type electrode layer 37p type electrode layer
41 resilient coating 42n type gallium nitride layers
43 luminescent layers, 440 first coatings
45p type contact layer 46n type electrode layer
47p type electrode layer
Embodiment
The object of the invention and plurality of advantages will describe in detail by following specific embodiment, and with reference to appended graphic, and disclosed fully.
Fig. 1 is for having LED structure with gallium nitride system first embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.Have LED structure with gallium nitride system first embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention, it comprises: substrate 10, resilient coating (buffer layer) 11, n type gallium nitride layer 12, luminescent layer 13, p type coating 14, p type contact layer 15.Substrate 10 materials can be by alumina single crystal (Sapphire) (comprising C-Plane (face), R-Plane and A-Plane), or SiC (6H-SiC or 4H-SiC), or Si, ZnO, GaAs and spinelle (MgAl2O4) are made, the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 11 on the substrate 10, its material is aluminum indium gallium nitride (Al
1-x-yGa
xIn
yN), 0≤X＜1,0≤Y＜1 wherein.
Be positioned at the n type gallium nitride layer 12 on the resilient coating 11.Be positioned at the luminescent layer 13 on the n type gallium nitride layer 12, its material is an InGaN.Be positioned at the p type coating 14 on the luminescent layer 13, its material is the p type aluminum indium nitride (Al of magnesium doping (Mg-doped)
1-xIn
xN), 0＜X＜1 wherein, but 0.1≤X≤0.4 is best, its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.Be positioned at the p type contact layer 15 on the p type coating 14, its material is mix the jointly p type InGaN (In of (Al-Mg-codoped) of magnalium
yGa
1-yN), 0≤Y＜1 wherein, its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
LED structure with gallium nitride system first embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise further and is positioned on the n type gallium nitride layer 12 n type electrode layer 16.LED structure with gallium nitride system first embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise the p type electrode layer 17 that is positioned on the p type contact layer 15 further, and p type electrode layer 17 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
x, WSi
x(transparent conductive oxide layer TCO) comprises ITO, CTO, ZnO:Al, ZnGa for metal conducting layer of one of them or oxidic, transparent, conductive layers
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
Fig. 2 is for having LED structure with gallium nitride system second embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.Have LED structure with gallium nitride system second embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention, it comprises: substrate 20, resilient coating 21, n type gallium nitride layer 22, luminescent layer 23, p type coating 24, p type contact layer 25.
LED structure with gallium nitride system second embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention comprises the n type electrode layer 26 that is positioned on the n type gallium nitride layer 22 further.LED structure with gallium nitride system second embodiment that has growth under low-temperature and low-resistance p type contact layer according to the present invention can comprise the p type electrode layer 27 on the p type contact layer 25 further.P type electrode layer 27 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
x, WSi
x(transparent conductive oxide layer TCO) comprises ITO, CTO, ZnO:Al, ZnGa to the oxide layer of metal conducting layer of one of them or electrically conducting transparent
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
Fig. 3 is for having LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, and it comprises: substrate 30, resilient coating 31, n type gallium nitride layer 32, luminescent layer 33, dual coating 34, p type contact layer 35.Substrate 30, its material can be by alumina single crystal (Sapphire) (comprising C-Plane, R-Plane and A-Plane), or SiC (6H-SiC or 4H-SiC), or Si, ZnO, GaAs and spinelle (MgAl2O4) are made, and the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 31 on the substrate 30, its material is aluminum indium gallium nitride (Al
1-x-yGa
xIn
yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride layer 32 is positioned on the resilient coating 31.
Luminescent layer 33 on the gallium nitride layer 32, its material are InGaN.
Be positioned at the dual coating 34 on the luminescent layer 33, it comprises: first coating, 340, the second coatings 342.Be positioned at first coating 340 on the luminescent layer 33, be the p type aluminum indium nitride (Al of magnesium gallium doping (Mg-Ga-codoped)
1-xIn
xN), 0＜X＜1 wherein, but 0.1≤X≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.Be positioned at second coating 342 on first coating 340, be the p type aluminum indium nitride (Al of magnesium doping (Mg-doped)
1-zIn
zN), 0＜Z＜1 wherein, but 0.1≤Z≤0.4 the best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
P type contact layer 35, its material are the mix jointly InGaN (In of (Al-Mg-codoped) of magnalium
yGa
1-yN), 0≤Y＜1 wherein, it is positioned on the dual coating 34, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, comprises the n type electrode layer 36 that is positioned on the n type gallium nitride layer 32 further.The present invention has LED structure with gallium nitride system the 3rd embodiment of growth under low-temperature and low-resistance p type contact layer, can comprise the p type electrode layer 37 that is positioned on the p type contact layer 35 further.P type electrode layer 37 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
x, WSi
x(transparent conductive oxide layer TCO) comprises ITO, CTO, ZnO:Al, ZnGa for metal conducting layer of one of them or oxidic, transparent, conductive layers
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
Fig. 4 is for having LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer according to the present invention.The present invention has LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer, and it comprises: substrate 40, resilient coating 41, n type gallium nitride layer 42, luminescent layer 43, dual coating 44, p type contact layer 45.Substrate 40, its material can be by alumina single crystals (Sapphire) (comprising C-Plane, R-Plane and A-Plane), or SiC (6H-SiC or 4H-SiC), or Si, ZnO, GaAs and spinelle (MgAl
2O
4Make, the monocrystalline oxide that lattice constant (lattice constant) approaches nitride-based semiconductor also can use, but generally uses Sapphire and SiC.Be positioned at the resilient coating 41 on the substrate 40, its material is aluminum indium gallium nitride (Al
1-x-yGa
xIn
yN), 0≤X＜1,0≤Y＜1 wherein.N type gallium nitride layer 42 is for being positioned on the resilient coating 41.
Be positioned at the luminescent layer 43 on the n type gallium nitride layer 42, its material is an InGaN.
Be positioned at the dual coating 44 on the luminescent layer 43, it comprises: first coating 440 and second coating 442.Be positioned at first coating 440 on the luminescent layer 43, be the p type aluminum indium nitride (Al of magnesium doping (Mg-doped)
1-xIn
xN), 0＜X＜1 wherein, but 0.1≤X≤0.4 is best, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.Be positioned at second coating 442 on first coating 440, be mix the jointly p type aluminum indium nitride (Al of (Mg-Ga codoped) of magnesium gallium
1-zIn
zN), 0＜Z＜1,0.1≤Z≤0.4 the best wherein, its thickness is between between 50 dust to 3000 dusts, but 50 dust to 1000 dust the bests, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
Be positioned at the p type contact layer 45 on the dual coating 44, its material is mix the jointly p type InGaN (In of (Al-Mg-codoped) of magnalium
yGa
1-yN), 0≤Y＜1 wherein, its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
The present invention has LED structure with gallium nitride system the 4th embodiment of growth under low-temperature and low-resistance p type contact layer, comprises the n type contact layer 46 that is positioned on the n type gallium nitride layer 42 further.LED structure with gallium nitride system the 4th embodiment of the present invention comprises the electrode layer 47 that is positioned on the p type contact layer 45 further.Electrode layer 47 comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN, TiWN
x, WSi
xMetal conducting layer or oxidic, transparent, conductive layers (transparent conductive oxide layer, TCO), it comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2
The above is preferred embodiment of the present invention only for this paper, is not in order to limiting claim of the present invention, and any other all change or modification that does not break away from disclosed spirit and finish all should belong to claim of the present invention.
Claims (16)
1. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material are following any:
The alumina single crystal that comprises C-face, R-face and A-face; Or
SiC for 6H-SiC or 4H-SiC; Or
Si, ZnO, the synthetic material of GaAs and spinelle; Or
Lattice constant approaches the monocrystalline oxide of nitride-based semiconductor;
One resilient coating, its material are aluminum indium gallium nitride Al
1-x-yGa
xIn
yN, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is positioned on this resilient coating;
One luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
One p type coating is positioned on this luminescent layer, and its material is magnesium doped p type aluminum indium nitride Al
1-xIn
xN, 0＜X＜1 wherein, its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One p type contact layer is positioned on this p type coating, and its material is the common doped p type of magnalium InGaN In
yGa
1-yN, 0≤Y＜1 wherein, its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
2. light emitting diode construction according to claim 1 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
3. light emitting diode construction according to claim 1 comprises a p type electrode layer further, is positioned on this p type contact layer.
4. according to claim 1 or 3 described light emitting diode constructions, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN one of them, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
5. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material are following any:
The alumina single crystal that comprises C-face, R-face and A-face; Or
SiC for 6H-SiC or 4H-SiC; Or
Si, ZnO, the synthetic material of GaAs and spinelle; Or
Lattice constant approaches the monocrystalline oxide of nitride-based semiconductor;
One resilient coating, its material are aluminum indium gallium nitride Al
1-x-yGa
xIn
yN, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is positioned on this resilient coating;
One luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
One p type coating, its material are the common aluminum indium nitride Al that mixes of magnesium gallium
1-xIn
xN, wherein 0＜X＜1 is positioned on this luminescent layer, and its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One p type contact layer, its material are the common doped p type of magnalium InGaN In
yGa
1-yN, wherein 0≤Y＜1 is positioned on this p type coating, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
6. light emitting diode construction according to claim 5 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
7. light emitting diode construction according to claim 5 comprises a p type electrode layer further, is positioned on this p type contact layer.
8. light emitting diode construction according to claim 7, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN one of them, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
9. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material are following any:
The alumina single crystal that comprises C-face, R-face and A-face; Or
SiC for 6H-SiC or 4H-SiC; Or
Si, ZnO, the synthetic material of GaAs and spinelle; Or
Lattice constant approaches the monocrystalline oxide of nitride-based semiconductor;
One resilient coating, its material are aluminum indium gallium nitride Al
1-x-yGa
xIn
yN, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is positioned on this resilient coating;
One luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
One dual coating is positioned on this luminescent layer, and it comprises:
One first coating is magnesium gallium doped p type aluminum indium nitride Al
1-xIn
xN, wherein 0≤X＜1 is positioned on this luminescent layer, and its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One second coating is magnesium doped p type aluminum indium nitride Al
1-zIn
zN, wherein 0≤Z＜1 is positioned on this first coating, and its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One p type contact layer, material are the common InGaN In that mixes of magnalium
yGa
1-yN, 0≤Y＜1 wherein, it is positioned on this dual coating, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
10. light emitting diode construction according to claim 9 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
11. light emitting diode construction according to claim 9 comprises a p type electrode layer further, is positioned on this p type contact layer.
12. according to the light emitting diode construction of claim 11 described 1, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN one of them, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
13. the LED structure with gallium nitride system with growth under low-temperature and low-resistance p type contact layer is characterized in that, comprising:
One substrate, its material are following any:
Can be by the alumina single crystal that comprises C-face, R-face and A-face; Or
SiC for 6H-SiC or 4H-SiC; Or
Si, ZnO, the synthetic material of GaAs and spinelle; Or
Lattice constant approaches the monocrystalline oxide of nitride-based semiconductor;
One resilient coating, its material are aluminum indium gallium nitride Al
1-x-yGa
xIn
yN, wherein 0≤X＜1,0≤Y＜1 is positioned on this substrate;
One n type gallium nitride layer is positioned on this resilient coating;
One luminescent layer, its material is an InGaN, is positioned on this n type gallium nitride layer;
One dual coating is positioned on this luminescent layer, and it comprises:
One first coating is magnesium doped p type aluminum indium nitride Al
1-xIn
xN, wherein 0＜X＜1 is positioned on this luminescent layer, and its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One second coating is the common doped p type of magnesium gallium aluminum indium nitride Al
1-zIn
zN, wherein 0＜Z＜1 is positioned on this first coating, and its thickness is between between 50 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade; And
One p type contact layer, its material are the common doped p type of magnalium InGaN In
yGa
1-yN, wherein 0≤Y＜1 is positioned on this dual coating, and its thickness is between between 200 dust to 3000 dusts, and its growth temperature is between 600 degrees centigrade to 1100 degrees centigrade.
14. light emitting diode construction according to claim 13 comprises a n type electrode layer further, is positioned on this n type gallium nitride layer.
15. light emitting diode construction according to claim 13 comprises a p type electrode layer further, is positioned on this p type contact layer.
16. light emitting diode construction according to claim 15, this p type electrode layer comprises a metal conducting layer or an oxidic, transparent, conductive layers, and wherein the material of this metal conducting layer comprises Ni/Au, Ni/Pt, Ni/Pd, Ni/Co, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au, Ta/Au, TiN one of them, the material of this oxidic, transparent, conductive layers comprises ITO, CTO, ZnO:Al, ZnGa
2O
4, SnO
2: Sb, Ga
2O
3: Sn, AgInO
2: Sn, In
2O
3: Zn, CuAlO
2, LaCuOS, NiO, CuGaO
2, SrCu
2O
2One of them.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5923052A (en) * | 1997-02-12 | 1999-07-13 | Lg Electronics Inc. | Light emitting diode |
| JP2004006957A (en) * | 1999-02-05 | 2004-01-08 | Nippon Telegr & Teleph Corp <Ntt> | Optical semiconductor equipment |
| CN1289152A (en) * | 1999-09-20 | 2001-03-28 | 晶元光电股份有限公司 | Light emitting diode |
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