CN100439986C - Method of forming film pattern, method of manufacturing device, electro-optical device, and electronic apparatus - Google Patents
Method of forming film pattern, method of manufacturing device, electro-optical device, and electronic apparatus Download PDFInfo
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- CN100439986C CN100439986C CNB2006100090450A CN200610009045A CN100439986C CN 100439986 C CN100439986 C CN 100439986C CN B2006100090450 A CNB2006100090450 A CN B2006100090450A CN 200610009045 A CN200610009045 A CN 200610009045A CN 100439986 C CN100439986 C CN 100439986C
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Abstract
A method of forming a film pattern by arranging a functional liquid on a substrate includes; forming first banks having a lyophobic property on surfaces thereof; arranging a first functional liquid in regions partitioned by the first banks; baking the first functional liquid; forming second banks on the first banks; and arranging a second functional liquid in regions partitioned by the second banks. A lyophilic treatment is performed on the surfaces of the first banks between the arranging of the first functional liquid and the forming of the second banks.
Description
Technical field
The present invention relates to the formation method of film figure and manufacture method, electro-optical device and the electronic device of device.
Background technology
Have the manufacture view of the device of electronic circuit or integrated circuit distribution, utilize for example photoetching process.This photoetching process is: on the substrate of coated with conductive film in advance, apply the photosensitive material that is called resist, and to the circuit pattern irradiation and develop, by coming the etching conducting film according to the resist pattern, film forming Wiring pattern.This photoetching process needs large-scale equipment or complicated step, and the result of use of material has only about several % and discarded its most of material of having in addition, so the manufacturing cost height.
Relative therewith, existing motion: utilize from the method (for example, with reference to patent documentation 1) drop ejection method, that so-called ink-jet method comes to form at substrate Wiring pattern of droplet jetting head with droplet-like ejection fluent material.In the method, directly pattern applies Wiring pattern as the functional liquid that has disperseed conductive particles such as metal microparticle and forms and use printing ink on substrate, heat-treats afterwards or laser radiation and change the conductive film pattern of film into.According to this method, do not need photoetching process, manufacturing process becomes very simultaneously simple, also has the advantage that can finish with a spot of starting material use amount.
[patent documentation 1] spy opens flat 11-271753 communique
Utilize ink-jet method forming on the substrate under the situation of film figure,, form the dam configuration that is called storage lattice cofferdam (bank) usually in order to prevent the expansion of printing ink.In order to prevent adhering to of printing ink, lyophoby is implemented on the surface in storage lattice cofferdam to be handled, but, if storage lattice cofferdam becomes lyophobyization, then on this, want to overlap to form under the situation of other patterns, the wettability that is sprayed on the printing ink on the storage lattice cofferdam degenerates, and has the problem that can not obtain good pattern.
Summary of the invention
The present invention carries out in view of the above-mentioned problems, and its purpose is, providing can high precision and be formed uniformly formation method, device and manufacture method thereof, electro-optical device and the electronic device of the film figure of the film figure of seeking miniaturization or graph thinning.
To achieve the above object, the present invention adopts following formation.
The formation method of film figure of the present invention is a kind of configuration feature liquid on substrate and form the formation method of film figure, it is characterized in that, comprising: form the surface operation in the first storage lattice cofferdam of lyophobyization on described substrate; The operation of configuration first functional liquid in the zone of being divided by the described first storage lattice cofferdam; Dry described first functional liquid also forms the operation of first film figure; On the described first storage lattice cofferdam, form the operation in the second storage lattice cofferdam; The operation of configuration second functional liquid in the zone of being divided by the described second storage lattice cofferdam; Operation and formation second at described first functional liquid of configuration are store between the operation in lattice cofferdam, have to make the surface in the described first storage lattice cofferdam carry out the operation that lyophily is handled.
According to the present invention, before configuration second functional liquid, make surface, first storage lattice cofferdam lyophilyization in advance as substrate, so improve the wettability between the substrate and second functional liquid, can form uniform film figure.
In the present invention, it can be the processing of in comprising the atmosphere of oxygen plasma is shone in the described first storage lattice cofferdam that described lyophily is handled, or to described first processing of storing lattice cofferdam irradiation ultraviolet radiation, or store the lattice cofferdam to described first and carry out the processing of heat treated, or make up any processing of these processing.
In the present invention, described functional liquid can become discovery electric conductivity with thermal treatment or optical processing.For example, can be the functional liquid that in described functional liquid, comprises conductive particle.
According to this method, can make film figure become Wiring pattern, can be useful in various devices.In addition, except conductive particle, organic silver compound, form material or utilize the RGB ink material, also go for organic El device or have the manufacturing of the liquid crystal indicator of color filter by the light-emitting component that utilizes organic EL etc.
Device making method of the present invention is a kind of manufacture method that forms the device of film figure operation on the substrate that comprises, it is characterized in that: the formation method by above-mentioned film figure of the present invention forms film figure on described substrate.
According to the present invention, can obtain: connect airtight in substrate well, seek the device with sandwich construction film figure of the homogenising of thickness.
Electro-optical device of the present invention is characterized in that: possess the device that utilizes described device making method manufacturing of the present invention.In addition, electronic device of the present invention is characterized in that: possess described electro-optical device of the present invention.
According to the present invention, can obtain: connect airtight in substrate well, seek the electro-optical device with sandwich construction film figure and the electronic device of the homogenising of thickness.
Description of drawings
Fig. 1 is a mode chart of conceptually representing the formation method of film figure of the present invention.
Fig. 2 is the partial enlarged drawing of active-matrix substrate.
Fig. 3 is the equivalent circuit diagram of active-matrix substrate.
Fig. 4 is the figure of expression active-matrix substrate manufacturing sequence.
Fig. 5 is the figure of presentation graphs 4 subsequent order.
Fig. 6 is the approximate three-dimensional map of droplet ejection apparatus.
Fig. 7 is the sectional view of droplet jetting head.
Fig. 8 is the figure of presentation graphs 5 subsequent order.
Fig. 9 is the figure of presentation graphs 8 subsequent order.
Figure 10 is the figure of presentation graphs 9 subsequent order.
Figure 11 is the figure of expression Figure 10 subsequent order.
Figure 12 is the figure of expression Figure 11 subsequent order.
Figure 13 is the figure of expression Figure 12 subsequent order.
Figure 14 is the figure of expression Figure 13 subsequent order.
Figure 15 is the figure of expression Figure 14 subsequent order.
Figure 16 is the mode chart of other form examples of expression active-matrix substrate.
Figure 17 is a planimetric map of seeing liquid crystal indicator from subtend substrate one side.
Figure 18 is the sectional view of liquid crystal indicator.
Figure 19 is the figure of the concrete example of expression electronic device.
Among the figure: the B1-first storage lattice cofferdam, the B2-second storage lattice cofferdam, F1, F2-film figure, L1, L2-functional liquid, the P-substrate, 51-storage lattice cofferdam (the first storage lattice cofferdam), 61-storage lattice cofferdam (the second storage lattice cofferdam), 100-liquid crystal indicator (electro-optical device), 600,700, the 800-electronic device.
Embodiment
Below, accompanying drawings the present invention.
Fig. 1 is a mode chart of conceptually representing the formation method of film figure of the present invention.
The formation method of film figure of the present invention comprises: the operation that forms the first storage lattice cofferdam B1 on substrate P; The operation of the configuration first functional liquid L1 in the zone of being divided by the first storage lattice cofferdam B1; Dry (burning till) first functional liquid L1 also forms the operation of the first film figure F1; On the first storage lattice cofferdam B1, form the operation of the second storage lattice cofferdam B2; The operation of the configuration second functional liquid L2 in the zone of being divided by the second storage lattice cofferdam B2; Dry (burning till) second functional liquid L2 also forms the operation of the second film figure F2.
In the formation method of film figure of the present invention, by configuration feature liquid in the zone of being divided by storage lattice cofferdam B1 or B2, and dry this functional liquid, on substrate P, form film figure F1 and F2.In such cases, the shape of coming the regulation film figure with storage lattice cofferdam, thus for example, by the narrowed width between the storage lattice cofferdam that makes adjacency etc., appropriate storage lattice cofferdam B1, the B2 of forming, miniaturization or the graph thinning that can seek film figure F1, F2.
As the formation method in storage lattice cofferdam, can utilize any means of photoetching process or print process etc.For example, utilize under photolithographic situation, with rotation apply, spray apply, roller coat covers, the prescriptive procedure of mouthful pattern coating, immersion coating etc., forming storage lattice cofferdam on substrate P forms after the formed layer of material, wait by etching method or polishing (ashing) and to carry out pattern and form, can obtain the storage lattice cofferdam of predetermined pattern shape.In addition, also can on other objects that are not substrate P, form after the storage lattice cofferdam, it is configured on the substrate P.
The surface of wishing storage lattice cofferdam B1, B2 has lyophobicity.Thus, can prevent that functional liquid is attached to storage lattice cofferdam upper surface, correctly form film figure with wanted shape, but, if so make surface, storage lattice cofferdam lyophobyization, when then wanting to form the second film figure F2 on storage lattice cofferdam B1, the storage lattice cofferdam B1 of this lyophobyization becomes on the position of substrate, and the wettability between the second functional liquid L2 is hindered, and can not form the second good film figure F2.Therefore, in the present invention, store between the operation of lattice cofferdam B2, be provided with the operation that makes first surface of storing lattice cofferdam B1 carry out the lyophily processing in operation and the formation second of the configuration first functional liquid L1.Handle as lyophily and can select in ultraviolet treatment with irradiation, the air atmosphere oxygen for handling the O of gas
2Cement Composite Treated by Plasma (that is, in comprising the atmosphere of oxygen) or the processing of making up these to the processing of the first storage lattice cofferdam B1 irradiation plasma.
The method of lyophobicity is paid in storage lattice cofferdam, handle the method on storage surface, lattice cofferdam (lyophoby processings), or store the method for lattice cofferdam from body with lyophobicity material (material of the lyophoby composition that filling is fluorine-based etc.) formation with plasmas such as fluoro-gas.But, storage lattice cofferdam B2 as for upper strata one side, if after forming storage lattice cofferdam (promptly, storage lattice cofferdam material is become after the pattern of storage lattice cofferdam shape) carry out Cement Composite Treated by Plasma, the front surface lyophobyization once more of the storage lattice cofferdam B1 of lower floor's one side of handling of lyophily then, so during ejection configuration feature liquid L2, might can not guarantee sufficient wettability.Therefore, as for the storage lattice cofferdam B2 of upper strata one side, the material of handy lyophobicity forms storage lattice cofferdam material from body.Or, also can form after the film that storage lattice cofferdam material constituted, carry out before pattern forms, the surface of this film is carried out carrying out pattern and forming after lyophoby handles.In such cases, lyophoby was handled before pattern forms and is carried out, so the surface of the storage lattice cofferdam B1 of lower floor's one side can keep lyophily.And the lyophoby processing is not carried out in the side of storage lattice cofferdam B2 yet, so the wettability between storage side, lattice cofferdam and the functional liquid L2 also becomes well.
As functional liquid of the present invention (printing ink) L1, L2, can utilize all functional liquids.Called function liquid is meant: carry out membranization by making the film component that comprises in the liquid, can form the functional liquid of the film (functional membrane) with predetermined function.Have as relevant function: electronics sexual function (electric conductivity, insulativity, piezoelectricity, pyroelectricity, dielectricity etc.), (selection of light absorbs optical property, reflectivity, polarity, the selection permeability of light, non-linear optical, fluorescence or phosphorescence etc. luminous, photochromism etc.), magnetic function (hard magnetic, soft magnetism, non magnetic, magnetic permeability etc.), chemical functional (adsorbability, separate absorption, catalytic, water absorptivity, ionic conductivity, oxidation-reduction quality, electrochemical properties, electrochromism etc.), mechanical function (mar proof etc.), hot merit energy (heat transmissibility, thermal insulation, infrared radiation etc.), living body functional (biosome suitability, antithrombotic etc.) etc. all functions.For example,, present the printing ink of electric conductivity, can form film figure with electric conductivity by utilizing thermal treatment or optical processing as above-mentioned functional liquid L1, L2.The film figure of this electric conductivity can be useful in the various devices as distribution.
As the method for configuration feature liquid in the zone of being divided by storage lattice cofferdam, preferably utilize the so-called ink-jet method of drop ejection method.By utilizing drop ejection method, than other paint-on techniques of rotation cladding process etc., it is few that the waste of fluent material consumes, and has: can carry out the amount of the functional liquid that disposes on the substrate or the advantage of position control easily.
In addition, in Fig. 1, form 2 layers film figure F1, the formation of F2 in order, but under situation about forming more than 3 layers, also can profit use the same method.That is, form before the film figure of upper strata one side, in advance lyophily is carried out on the surface, storage lattice cofferdam of substrate and handle, improve the mode of the wettability between storage lattice cofferdam and the functional liquid, can form good film figure.
Below, as the embodiment of the manufacture method of device of the present invention, the example that the formation method of film figure of the present invention is useful in the manufacture method of active-matrix substrate describes.
＜active-matrix substrate 〉
Fig. 2 is the partial enlarged drawing of the active-matrix substrate of relevant present embodiment.
And, on grid distribution 40, connect gate electrode 41, on gate electrode 41, dispose TFT30 by insulation course.On the other hand, connect source electrode 43, be connected at an end and the TFT of source electrode 43 (on-off element) 30 at source distribution 42.
In addition, in grid distribution 40 and 42 area surrounded of source distribution, the mode that is parallel to grid distribution 40 makes electric capacity line 46 distributions.Electric capacity line 46 is the lower floors that are configured in pixel electrode 45 and source distribution 42 by insulation course.
In addition, grid distribution 40, gate electrode 41, source distribution 42, electric capacity line 46 are formed on on the one side.
Fig. 3 is the equivalent circuit diagram of active-matrix substrate 20, is situation about utilizing at liquid crystal indicator.
Active-matrix substrate 20 is used under the situation of liquid crystal indicator, on image display area with a plurality of pixel 100a of rectangular formation.On each these pixels 100a, be formed with the TFT30 that pixel switch is used, supply with picture element signal S1, S2 ..., the source distribution 42 of Sn is connected electrically in the source electrode of TFT30 by source electrode 43.Supply picture element signal S1, the S2 of source distribution 42 ..., Sn, can also can supply with each other to adjacent multiple source distribution 42 by this order with the line sequentially feeding by each group.
In addition, grid distribution 40 is connected electrically in the grid of TFT30 by gate electrode 41.And, constitute with stipulated time pulse feature ground with sweep signal G1, G2 ... Gm is applied to grid distribution 40 by this order with the line order.
In addition, for the picture element signal S1, the S2 that prevent to have kept ..., the leakage of Sn, utilize electric capacity line 46, be connected in parallel on the liquid crystal capacitance that forms between pixel electrode 45 and the opposite electrode 121 and added accumulation capacitance 48.For example, the voltage of pixel electrode 45 is just to be remained on than applying the source electrode time by accumulation capacitance 48 to be longer than time of 3.Thus, improve charge-retention property, can realize the high liquid crystal indicator of contrast 100.
The manufacture method of＜active-matrix substrate 〉
Below, 20 manufacture method of active-matrix substrate is described.
20 of active-matrix substrate is made by first operation that forms grid pattern on the substrate P, the 3rd operation that forms second operation of laminated section 35 and form pixel electrode 45.
Describe each operation below in detail.
(first operation: distribution forms)
Fig. 4, Fig. 5 form the figure of operation as first operation, explanation distribution.In addition, Fig. 4 (b), Fig. 5 (b) are respectively the sectional views along A-A ' line among Fig. 4 (a), the figure (a).
As the substrate P of the grid pattern distribution that forms grid distribution 40 or source distribution 42 etc., can utilize various materials such as glass, quartz glass, Si wafer, plastic sheeting, sheet metal.In addition, also comprise:, formed the substrate of semiconductor film, metal film, dielectric film, organic membrane etc. as basalis on the surface of these various material substrates.
At first, as shown in Figure 4, on substrate P, form the storage lattice cofferdam 51 of insulativity material.Storage lattice cofferdam is the assigned position that is configured in substrate P for the distribution that the back will be narrated with printing ink.
Particularly, shown in Fig. 4 (a), according to photoetching process, in the upper surface formation storage lattice cofferdam 51 of the substrate P of having cleaned, this storage lattice cofferdam 51 has a plurality of peristomes 52,53,54,55 corresponding to the formation position of the distribution of grid pattern.
As the material in storage lattice cofferdam 51, for example can utilize the macromolecular material of acrylic resin, polyimide resin, olefin resin, melmac etc.In addition, consider thermotolerance, can comprise the material of inanimate matter.Storage lattice cofferdam material as inanimate matter can be enumerated: for example, comprise in the bone of polysilazane, polysiloxane, type siloxane resist, polysilanes resist etc. the silicon element macromolecule inorganic material or photosensitive inorganic material, comprise any spin glass film, diamond film and the fluorinated amorphous matter carbon film etc. in quartz glass, alkyl siloxane polymer, alkyl silsesquioxane polymer, hydrogenation alkyl silsesquioxane polymer, the polyaryl ether.And then ground, as the storage lattice cofferdam material of inorganics, for example, can utilize the molten gel of gas, porous matter silicon etc.As comprise the photonasty polysilazane composition of polysilazane and light acid producing agent, under situation, do not need Etching mask, so be suitable with photosensitive material.In addition, in order in peristome 52,53,54, to dispose Wiring pattern printing ink well, lyophoby is implemented in storage lattice cofferdam 51 handled.Handle as lyophoby, implement CF
4Cement Composite Treated by Plasma etc. (utilizing it to comprise the Cement Composite Treated by Plasma of the plain composition of fluorine).In addition, also can to storage lattice cofferdam 51 starting material from body in advance filling lyophoby composition (fluorine-based etc.) substitute and implement CF
4Cement Composite Treated by Plasma etc.
By storage lattice cofferdam 51 formed peristomes 52,53,54,55, corresponding to the distribution of the grid pattern of grid distribution 40 or source distribution 42 etc.That is,, form the distribution of the grid pattern of grid distribution 40 or source distribution 42 etc. by configuration distribution printing ink on the peristome 52,53,54,55 in storage lattice cofferdam 51.
Particularly, the peristome 52,53 that forms in the mode of extending to directions X is corresponding to the formation position of grid distribution 40, electric capacity line 46.And,, connected the peristome 54 that forms positions corresponding to gate electrode 41 at peristome 52 corresponding to the formation position of grid distribution 40.In addition, extending morphogenetic peristome 55 to the Y direction is formation positions corresponding to source distribution 42.In addition, the peristome 55 that extends to the Y direction forms disjunction in cross part 56, so that the peristome 52,53 that extends with directions X does not intersect.
Then, the droplet ejection apparatus IJ that will narrate with the back sprays the distribution printing ink that configuration comprises conductive particle in peristome 52,53,54,55, forms the grid pattern distribution that grid distribution 40 and source distribution 42 are constituted on substrate.
Distribution printing ink is by conductive particle being dispersed in dispersion liquid in the dispersion medium or organic silver compound or the silver oxide nano particle being dispersed in the printing ink that solution constituted in the solvent (dispersion medium).As conductive particle, for example, except the metal microparticle of gold, silver, copper, tin, lead etc., can also utilize these the oxide and the particulate of electric conductive polymer or superconductor.In order to improve dispersiveness, can be at the surface-coated organism of these conductive particles and use.
The particle diameter of preferred conductive particle is below the above 0.1 μ m of 1nm.If greater than 0.1 μ m, then produce the danger of stopping up in the nozzle of the droplet jetting head that might will narrate in the back.In addition, if less than 1nm, then the volume ratio of the coating agent of conductive particle is become big and organic ratio in the film that obtained becomes excessive.
As dispersion medium, if can disperse above-mentioned conductive particle, do not cause that cohesion does not just have specific restriction.For example, except water, can also use the alcohols of methyl alcohol, ethanol, propyl alcohol, butanols etc.; The hydrocarbon compound of normal heptane, normal octane, decane, dodecane, the tetradecane, toluene, dimethylbenzene, isopropyl toluene, durene, indenes, bipentene, tetralin, decahydronaphthalenes, cyclohexyl benzene etc.; Or the ether compound of ethylene glycol dimethyl ether, ethylene glycol bisthioglycolate ethylether, Ethylene Glycol Methyl ethylether, diethylene glycol dimethyl ether, diethyl carbitol, diglycol methyl ethyl ether, 1,2 dimethoxy-ethanes, two (2-methoxyl) ether, Dui diox etc.; The polar compound that also has carbonic allyl ester, gamma-butyrolacton, N-N-methyl-2-2-pyrrolidone N-, dimethyl formamide, the mute sulfone of diformazan, ring ethyl ketone etc.In these, consider from the stability of atomic dispersiveness, dispersion liquid and the viewpoint that is useful in drop ejection method (ink-jet method) easily, preferred water, alcohol type, hydrocarbon compound, ether compound, better dispersion medium can be enumerated water, hydrocarbon compound.
The surface tension of the dispersion liquid of conductive particle for example is preferably, the scope that the above 0.07N/m of 0.02N/m is following.During with ink-jet method ejection liquid, if surface tension is less than 0.02N/m, then ink composite increases the wettability of nozzle face and that flight takes place easily is crooked, if surpass 0.07N/m, and the meniscus shape instability of spray nozzle front end and spray volume or the control of ejection time become difficulty then.For the adjustment form surface tension, it is just passable in the scope that does not reduce with the contact angle of substrate above-mentioned dispersion liquid to be added the surface tension modifier of fluorine system, silicon system, nonionic system etc.Nonionic is that surface tension modifier can improve the wettability of liquid to substrate, improves the leveling of film, and the generation of the fine convex-concave that prevents film is worked.As required, above-mentioned surface tension modifier can comprise the organic compound of ethanol, ether, ester, ketone etc.
The viscosity of dispersion liquid is preferably for example below the above 50mPas of 1mPas.During with ink-jet method ejection liquid, under the situation of viscosity less than 1mPas, because the outflow of printing ink, the nozzle periphery pollutes easily, if under the situation of viscosity greater than 50mPas, the obstruction frequency of nozzle bore uprises and drop ejection smoothly becomes difficulty.
After substrate P ejection distribution is with printing ink,, carries out dried as required, burn till processing in order to remove dispersion medium.
Dried is to utilize the heat treated of common hot plate as heated substrates P, electric furnace etc. to carry out.For example, 180 ℃ heating was carried out about 60 minutes.
Consider boiling point (vapor pressure), atomic dispersiveness or the oxidisability etc. of dispersion medium thermal behavior, apply agent have or not or the heat resisting temperature of amount, matrix material etc. and suitably decision burn till the treatment temperature of processing.For example, in order to remove the coating agent that constitutes by organism, be necessary in 250 ℃, to burn till.
Burn till processing by such drying, guarantee electrically contacting between the conductive particle, change conductive film into.
In addition, on the distribution of grid distribution 40 or source distribution 42 etc., also can form metal protective film 47.Metal protective film 47 is the films for () transport phenomena of the conductive film that suppresses to be made of silver or copper etc.Be preferably nickel as the material that forms metal protective film 47.In addition, be configured in substrate P and form the metal protective film 47 that constitutes by nickel with drop ejection method.In addition, also can wait and form nickel with no electrolysis spraying plating.
By above operation, as shown in Figure 5, on substrate P, form the layer that constitutes by the distribution of storing lattice cofferdam 51 and grid pattern.
But,, can enumerate: charged control mode, pressurization and vibration mode, electromechanical conversion regime, electric heating conversion regime, electrostatic attraction mode etc. as the ejection technology of drop ejection method.Charged control mode is with charged electrode material to be paid electric charge, with the direction and from the mode of nozzle ejection of circling in the air of deviating electrode control material.In addition, the pressurization and vibration mode be to material apply 30kg/cm for example UHV (ultra-high voltage) and to the mode of the front end one side ejection material of nozzle, do not adding under the control voltage condition, material carries out straight ahead and is ejected from nozzle, if apply control voltage then between material, produce Coulomb repulsion and material disperses, can not spray from nozzle.In addition, the electromechanical conversion regime is to have utilized piezoelectric element to be subjected to the electric signal of pulse feature and the character of being out of shape, because piezoelectric element be out of shape, by the flexible material pressure is given in the space of having stored material, the mode that sprays from this space extrusion material and from nozzle.
In addition, the electric heating conversion regime is by being located at the well heater in the space of having stored material, makes sharply vaporization and produce bubble (bubble) of material, utilizes the pressure of bubble to spray the mode of the material in the space.The electrostatic attraction mode is the meniscus that forms material to applying slight pressure in the space of having stored material at nozzle, applies electrostatic attraction and draws the mode of material with this state.In addition, other mode can also be suitable for, and utilizes mode that the fluid viscosity of electric field changes or the mode that material is flown out with discharge spark.Drop ejection method has: the advantage of materials used less wastage and the material that accurate configuration will be measured on want position.In addition, utilize one the amount of (liquid) of the drop ejection liquid material that method sprayed to be for example 1～300 nanogram.
The droplet ejection apparatus IJ that is utilized during as the distribution that forms grid pattern can utilize droplet ejection apparatus IJ shown in Figure 6.
Droplet ejection apparatus (ink discharge device) IJ possesses: droplet jetting head 301, directions X driving shaft 304, the Y direction axis of guide 305, control device CONT, stand 307, wiper mechanism 308, base station 309, well heater 315 from the device of droplet jetting head to substrate P ejection drop (dripping).Stand 307 be with this droplet ejection apparatus IJ be provided with printing ink (fluent material), support substrate P, have an illustrated fixed mechanism of omission that substrate P is fixed on the reference position.
At directions X driving shaft 304, be connected with directions X driving motor 302.Directions X driving motor 302 is stepping motors, if the drive signal of supplying with directions X from control device CONT then makes 304 rotations of directions X driving shaft.If directions X driving shaft 304 rotation, then droplet jetting head 301 moves to X-direction.
The Y direction axis of guide 305 is to be fixed on base station 309 and can not to move.Stand 307 has Y direction driving motor 303.Y direction driving motor 303 is stepping motors etc., if the drive signal of supplying with the Y direction from control device CONT then makes stand 307 move to the Y direction.
Control device CONT is a voltage from the ejection control usefulness of drop to droplet jetting head 301 that supply with.In addition, supply with the drive pulse signal that directions X of its control droplet jetting head 301 moves, supply with the drive pulse signal that the Y direction of control stands 307 moves to Y direction driving motor 303 to directions X driving motor 302.
Well heater 315 here is the mechanism that is annealed the thermal treatment substrate P by lamp, carries out the evaporation and the drying of solvent that apply, that comprised in fluent material on the substrate P.The input of the power supply of this well heater 315 and cut-out also are to control with control device CONT.
Droplet ejection apparatus IJ makes the stand 307 of droplet jetting head 301 and support substrate P spray drop to substrate P in relative scanning one side on one side.At this, in the following description, as the direction of scanning, the Y direction that is orthogonal to directions X is as non-direction of scanning with directions X.
Thereby the nozzle of droplet jetting head 301 is provided with along arranging at regular intervals as the Y direction of non-direction of scanning.In addition, in Fig. 6, the direction of propulsion of 301 pairs of substrate P of droplet jetting head vertically disposes, and still, also can adjust the angle of droplet jetting head 301 and makes the direction of propulsion of substrate P is intersected.If like this,, can regulate the spacing between nozzle by adjusting the angle of droplet jetting head 301.In addition, the distance between substrate P and the nozzle face is regulated arbitrarily.
Fig. 7 is the sectional view of droplet jetting head 301.
On droplet jetting head 301, adjacent and be provided with piezoelectric element 322 with the liquid chamber 321 of receiving fluids material (distribution with printing ink etc.).By the fluent material feed system, with fluent material feed fluid chamber 321, wherein said fluent material feed system comprises the material chest of receiving fluids material.
In such cases, apply magnitude of voltage, the deflection of control piezoelectric element 322 by change.And, apply the frequency of voltage by change, the deformation velocity of control piezoelectric element 322.Utilizing the drop ejection of piezoelectricity mode is that material is not heated, so have the advantage that the composition to material does not influence.
(second operation: form laminated section)
Fig. 8～Figure 11 is explanation forms operation as the laminated section of second operation figure.In addition, Fig. 8 (b)～Figure 11 (b) is respectively the sectional view along A-A ' line among Fig. 8 (a)～Figure 11 (a), and Fig. 9 (c)～Figure 11 (c) is respectively the sectional view along B-B ' line of Fig. 9 (a)～Figure 11 (a).
In second operation, the assigned position on the layer that the distribution by storage lattice cofferdam 51 and grid pattern constitutes forms the layer laminate 35 that is made of dielectric film 31 and semiconductor film (contact layer 33, active layer 32).
In this operation, formed wiring layer in first operation (grid distribution 40 etc.) is gone up and is formed new wiring layer, but, because lyophobyization carry out in the surface that in first operation distribution is formed the storage lattice cofferdam 51 of usefulness, if so on the surface in relevant storage lattice cofferdam 51, want directly to form source electrode etc., then the printing ink of electrode formation usefulness is ejected by storage lattice cofferdam 51, can not form good film figure.Therefore, in this operation, before forming the source electrode, in advance lyophily is implemented on the surface in the storage lattice cofferdam 51 that becomes substrate and handled.Handle as lyophily, can select in ultraviolet treatment with irradiation or the atmospheric environment with oxygen is the O that handles gas
2Cement Composite Treated by Plasma or heat treated.In addition, also can make up these processing.For example, O
2Cement Composite Treated by Plasma be that substrate P is carried out from the mode of the oxygen of plasma discharge electrode irradiation plasmoid.As O
2Plasma process conditions, for example, plasma power is that 50W～100W, oxygen flow are that 50ml～100ml/ minute, the transporting velocity of the substrate P of article on plasma body sparking electrode are that second 0.5mm/ second～10mm/, substrate temperature are 70 ℃～90 ℃.Heat treated is to carry out 30 minutes～90 minutes, 200 ℃～300 ℃ heating.
If the surface in lyophily storage lattice cofferdam 51 then utilizes plasma CVD method, to the continuous film forming that carries out dielectric film 31, active layer 32, contact layer 33 on the substrate P comprehensively.Particularly, as shown in Figure 8, form continuously: as the silicon nitride film of dielectric film 31, as the amorphous silicon film of active layer 32, as the n of contact layer 33 by changing unstrpped gas or changing condition of plasma
+The type silicon fiml.
Then, as shown in Figure 9, utilize photoetching process, at assigned position configuration protection layer 58 (58a～58c).Shown in Fig. 9 (a), so-called assigned position be grid distribution 40 with the cross part 56 of source distribution 42 on, on the gate electrode 41 and on the electric capacity line 46.
In addition, be configured in protective seam 58a and the protective seam 58b that is configured on the electric capacity line 46 on the cross part 56, form in mutual discontiguous mode.In addition, shown in Fig. 9 (b), by carrying out half exposure and form ditch 59 to being configured in protective seam 58c on the gate electrode 41.
Then, to the etch processes of implementing in full of substrate P, remove contact layer 33, active layer 32.And then the enforcement etch processes, remove dielectric film 31.
Thus, as shown in figure 10, (contact layer 33, active layer 32, dielectric film 31 are removed in the zone beyond the assigned position of 58a～58c) from having disposed protective seam 58.On the other hand, on the assigned position of configuration protection layer 58, form the laminated section 35 that constitutes by dielectric film 31 and semiconductor film (contact layer 33, active layer 32).
In addition, the laminated section 35 that forms on gate electrode 41 carries out half exposure and has formed ditch 59 protective seam 58c, so, by developing once more before the etching ditch is connected.Shown in Figure 10 (b), remove the contact layer 33 of corresponding ditch 59, formed disjunction and be two sections state.Thus, on gate electrode 41, form the TFT30 that constitutes by active layer 32 and contact layer 33 as on-off element.
Then, as shown in figure 11, substrate P comprehensively on form the silicon nitride film as diaphragm 60 of protection contact layer 33.
Like this, finish the formation of laminated section 35.
(the 3rd operation)
Figure 12～Figure 15 is the figure of explanation as formation operation the 3rd operation, pixel electrode 45 etc.In addition, Figure 12 (b)～Figure 15 (b) is respectively the sectional view along A-A ' line among Figure 12 (a)～Figure 15 (a), and Figure 12 (c)～Figure 15 (c) is respectively the sectional view along B-B ' line among Figure 12 (a)～Figure 15 (a).
In the 3rd operation, form source electrode 43, drain electrode 44, conductive layer 49 and pixel electrode 45.
At first, such with covering gate distribution 40 and source distribution 42, form storage lattice cofferdam 61 according to photoetching process.Promptly as shown in figure 12, form slightly cancellate storage lattice cofferdam 61.In addition, the cross part 56 between source distribution 42 and grid distribution 40 and source distribution 42 and electric capacity line 46 forms peristome 62, and the position of the drain region of corresponding TFT30 forms peristome 63.
In addition, shown in Figure 12 (b), peristome 62,63, the mode of exposing with the part of the laminated section 35 (TFT30) of formation on the gate electrode 41 forms.That is, storage lattice cofferdam 61 is laminated section 35 (TFT30) to be divided into two sections ground at directions X form.
As the material in storage lattice cofferdam 61, for example and storage lattice cofferdam 51 same, can use the macromolecular material of acrylic resin, polyimide resin, olefin resin, melamine resin etc.Though lyophobicity is wished to have in the surface in storage lattice cofferdam 61, if implement CF
4Cement Composite Treated by Plasma, then the storage lattice cofferdam 51 of the substrate handled of lyophily becomes lyophobyization once again, so, as storage lattice cofferdam 61, wish to utilize material material of filling lyophoby composition (fluorine-based etc.) in advance in body.
The peristome 62 that is formed by storage lattice cofferdam 61, the formation position corresponding to the conductive layer 49 or the source electrode 43 of the source distribution 42 that connects disjunction is formed at the peristome 63 of storing lattice cofferdam 61, corresponding to the formation position of drain electrode 44.And, in the part outside it, by 61 area surrounded in storage lattice cofferdam, corresponding to the formation position of pixel electrode 45.That is, connect by the conductive layer 49 of the source distribution 42 of disjunction, source electrode 43, drain electrode 44, pixel electrode 45 by in by the peristome 62,63 in storage lattice cofferdam 61 and in 61 area surrounded of storage lattice cofferdam, disposing conductive material, forming.
Then, remove the diaphragm 60 that substrate P goes up film forming comprehensively by etch processes.Thus, as shown in figure 13, remove the diaphragm 60 that film forming on the zone in lattice cofferdam 61 is store in not configuration.In addition, the metal protective film 47 that is formed on the distribution of grid pattern also is removed.
Then, utilize foregoing droplet ejection apparatus IJ, the ejection configuration comprises the electrode printing ink of the electrode material of source electrode 43 or drain electrode 44 etc. in the peristome 62,63 in storage lattice cofferdam 61.Electrode can utilize with printing ink: for forming the distribution identical printing ink of printing ink that grid distribution 40 utilizes.Substrate P ejection electrode with after the printing ink, in order to remove dispersion medium, is carried out dried as required, burns till processing.Burn till processing by drying, guarantee the electrical connection between the conductive particle, and be converted to conductive film.
In addition, in the drawings, with source electrode 43 and drain electrode 44 as monofilm, but also can be with these electrodes as the layer laminate that constitutes by a plurality of layers.For example, these electrodes be can be used as the conductive component of the 3-tier architecture that constitutes by stacked barrier metal layer, base layer, coating.Barrier metal layer and coating can utilize among Ni (nickel), Ti (titanium), W (tungsten), the Mn (manganese) etc. one or more the metal material of selecting to form; Base layer can utilize among Ag (silver), Cu (copper), the Al (aluminium) etc. one or more the metal material of selecting to form.These layers are by repeating material arrangement step and middle drying process, can forming in order.
Like this, as shown in figure 14, formation connects it by the conductive layer 49 of the source distribution 42 of disjunction, source electrode 43, drain electrode 44 on substrate P.
Then, in storage lattice cofferdam 61, the part of utilizing laser to wait to remove interface location between pixel electrode 45 and drain electrode 44, ejection is disposed in 61 area surrounded in storage lattice cofferdam: the pixel electrode printing ink that comprises the electrode material of pixel electrode 45.Pixel electrode printing ink is the dispersion liquid that the conductive particle of ITO etc. is dispersed in dispersion medium.Substrate P ejection pixel electrode with after the printing ink, for removing dispersion medium, as required, is carried out dried, burns till processing.Burn till processing by drying, guarantee the electrical connection between the conductive particle, and be converted to conductive film.
Like this, as shown in figure 15, on substrate P, form the pixel electrode of connecting with drain electrode 44 45.
In addition, in this operation, connect, utilize laser to wait to have removed the storage lattice cofferdam 61 of these interface portion, but this operation is not limited thereto in order to make drain electrode 44 and pixel electrode 45.For example, make the thickness attenuation in the storage lattice cofferdam 61 of this interface portion in advance with half exposure, the storage lattice cofferdam 61 that just need not remove this part also can make pixel electrode be configured to overlap drain electrode 44 with the printing ink ejection.
Through above operation, can make active-matrix substrate 20.
Like this, in the present embodiment, the wiring layer (source electrode 43, drain electrode 44, pixel electrode 45) that forms upper strata one side carry out lyophilyization to the surface as the storage lattice cofferdam 51 of substrate before in advance, so the wettability of raising and printing ink can form uniform film figure.
In addition, in the present embodiment, utilize the 3rd operation of first operation that forms the distribution of grid pattern on the substrate P, second operation that forms laminated section 35, formation pixel electrode 45 etc. to make active-matrix substrate 20, made up drying process and photolithographic processing so can omit.That is, form grid distribution 40 and source distribution 42 simultaneously, so can omit once combination drying process and photolithographic processing.
In addition, the laminated section 35 (dielectric film 31, active layer 32, contact layer 33) that is formed on the electric capacity line 46 is to come disjunction to form with the laminated section 35 discontiguous modes that are formed on the cross part 56, so, can avoid: the improper phenomenon that flows into the laminated section 35 on the electric capacity line 46 by the electric current of source distribution 42.
That is, form in the layer of laminated section 35, contact layer 33 is conductive films, and the laminated section 35 on the cross part 56 (contact layer 33) is gone up the conductive part 49 that forms connection source distribution 42.Therefore, the electric current by source distribution 42 also passes through contact layer 33.Thereby, if the laminated section 35 on the electric capacity line 46 contacts with laminated section 35 on the cross part 56, then as mentioned above, the phenomenon of the laminated section 35 on the electric capacity line 46 can take place to flow into by the electric current of source distribution 42.
Thereby, according to active-matrix substrate 20 of the present invention, can avoid so ill-considered phenomenon, so can bring into play desired performance.
In addition, in the present embodiment, the formation with source distribution 42 disjunction in cross part 56 has been described, but liquid can be the formation of the disjunction in cross part 56 with grid distribution 40 or electric capacity line 46 certainly.But the influence of 46 pairs of demonstrations of electric capacity line is greater than source distribution 42, so under the situation of demanding display quality, preferably adopt the structure of segmented source distribution 42.
In addition, in the present embodiment, an example of the suitable embodiment of active-matrix substrate has been described, but the shape of its component parts or combination are not limited by relevant embodiment.For example, with the shape configuration of laminated section 35, with the formation that can substitute Figure 10 as shown in figure 16.In such cases, source region and source distribution 42 be in abutting connection with the configuration, can the higher active-matrix substrate of manufacturing property so that the formation area of source electrode 43 is little.
＜electro-optical device 〉
Below, the liquid crystal indicator 100 as one of electro-optical device that utilizes active-matrix substrate 20 example is described.
Figure 17 is a planimetric map of seeing liquid crystal indicator 100 from counter substrate one side, and Figure 18 is the sectional view along H-H ' line of Figure 17.
In addition, be used among each figure that the following describes,, make the scale down difference of each layer or each parts in order to discern the size of each layer and each parts on the drawing.
In Figure 17 and Figure 18, liquid crystal indicator (electro-optical device) 100, by encapsulant 152 bonding tft array substrate 110 and the counter substrate 120 that comprise active-matrix substrate 20 as the encapsulant of photo-curable, the liquid crystal 150 and keeping of packing in the zone of being divided by sealing material 152.Form the frame shape of sealing in the zone of encapsulant 152 in real estate, do not possess liquid crystal injecting port, become the formation of the vestige that closed material of no use seals.
In the medial region in the formation zone of encapsulant 152, having formed has the frame (of light-proofness material made Zhou side See to cut り) 153.In the exterior lateral area of encapsulant 152, one side along tft array substrate 110 be formed with data line drive circuit 201 and mounting terminal 202, Yi Bian be formed with scan line drive circuit 204 along both sides in abutting connection with it.Remaining one side at tft array substrate 110 is provided with: be used to connect a plurality of distributions 205 between the scan line drive circuit 204 that the image display area both sides are provided with.And at least one place in the bight of counter substrate 120 disposes and is used for electricity and connects connection parts 206 between substrate between tft array substrate 110 and the counter substrate 120.
In addition, for example, also can make TAB (the automatic pressure welding type of the Tape Automated Bonding) substrate and the terminal group that is formed on tft array substrate 110 peripheries that drives with LSI is housed, by anisotropic conductive film incoming call with mechanically is connected, with formation data line drive circuit 201 and scan line drive circuit 204 on the alternative tft array substrate 110.
In addition, in the liquid crystal indicator 100, according to the kind of employed liquid crystal 150, be the mode of operation or the normal white mode/often black pattern of TN (Twisted Nematic twisted liquid crystal is to row) pattern, C-TN method, VA mode, IPS mode pattern etc., towards prescribed direction configuration phase difference plate, polarized light piece etc., but omit diagram at this.
In addition; liquid crystal indicator 100 is shown as colour under the situation that is used for constituting in counter substrate 120, tft array substrate 110 is faced in the zone of each pixel electrode of narrating later; form the color filter of for example red (R), green (G), blue (B) together with diaphragm.
In this liquid crystal indicator 100, because active-matrix substrate 20 makes by above-mentioned method, so become the display device of demonstration that can be high-quality.
In addition, in the present embodiment, as the method for the distribution structure that forms liquid crystal indicator, be suitable for the formation method of film figure of the present invention, but the present invention is not limited to these, and for example, the present invention also can be useful in the situation that forms color filter on active-matrix substrate or the counter substrate.
In addition, described active-matrix substrate also can be applied in electro-optical device beyond the liquid crystal indicator, organic EL (electroluminescence) display device etc. for example.Organic EL display has: the film that will comprise epipolic inorganic and organic compound, the formation of clamping with negative electrode and anode, by after described film injects electronics and hole, make its excitation and generate excitation son (exciton), and utilize this exciton again in conjunction with the time the emission (phosphorescence) of light and luminous element.And, by having on the substrate of above-mentioned TFT30, to be used in the fluorescent material of organic EL display element, the material that presents each illuminant colour of red, green and blue look is that luminescent layer forms the material of material and formation hole injection/electron supplying layer as printing ink, each is carried out pattern form, can make self-luminosity color organic EL device.Also comprise such organic EL device in the scope of electro-optical device of the present invention.In addition, in organic EL display,, can be suitable for the formation method of film figure of the present invention as forming the formation method that hole injection/transfer layer forms material or luminescent layer formation material.
And then, active-matrix substrate 20, also can be applicable to by PDP (plasm display panel) or on the film of the small size that forms on the substrate and flow through electric current abreast, utilize the surface conductive type electronic emission element of the phenomenon that does not produce the electronics emission etc. with face.
＜electronic device 〉
Below, the concrete example of electronic device of the present invention is described.
Figure 19 (a) is the stereographic map of mobile phone.In Figure 19 (a), the 600th, the main body of expression mobile phone, the 601st, represented to possess the display part of the liquid crystal indicator 100 of above-mentioned embodiment.
Figure 19 (b) is the stereographic map of one of portable information processor of word processor, personal computer etc. example.In Figure 19 (b), the 700th, expression signal conditioning package, the 701st, the input part, the 703rd of expression keyboard etc., expression information processing main body, the 702nd has represented to have the display part of the liquid crystal indicator 100 of above-mentioned embodiment.
Figure 19 (c) is the stereographic map of expression Wristwatch-type electronic device one example.In Figure 19 (c), the 800th, expression wrist-watch main body, the 801st, expression possesses the display part of the liquid crystal indicator 100 of above-mentioned embodiment.
Like this, the electronic device of expression is the electronic device that has possessed the liquid crystal indicator 100 of above-mentioned embodiment among Figure 19 (a)～Figure 19 (c), so can obtain high-quality or high-performance.
In addition, also can utilize present embodiment in the large-scale liquid crystal panel of televisor or monitor etc.
In addition, the electronic device of present embodiment is the electronic device that has possessed liquid crystal indicator 100, but also can be to have possessed other the electronic device of electro-optical device such as organic electroluminescence display device and method of manufacturing same, plasma-type display device.
More than, accompanying drawings preferred forms of the present invention, the invention is not restricted to relevant example certainly.All shapes of each represented component parts or combination etc. are an example in the above-mentioned example, in the scope that does not break away from aim of the present invention, can carry out various changes according to designing requirement.
Claims (8)
1, a kind of formation method of film figure is a configuration feature liquid and form the method for film figure on substrate, it is characterized in that, comprising:
On described substrate, form the surface by the operation in the first storage lattice cofferdam of lyophobyization;
The operation of configuration first functional liquid in the zone of being divided by the described first storage lattice cofferdam;
Dry described first functional liquid also forms the operation of first film figure;
On the described first storage lattice cofferdam, form the operation in the second storage lattice cofferdam; With
The operation of configuration second functional liquid in the zone of being divided by the described second storage lattice cofferdam;
Dispose the operation of described first functional liquid and form described second and store between the operation in lattice cofferdam, have the operation that lyophily is handled is carried out on the surface in the described first storage lattice cofferdam.
2, the formation method of film figure according to claim 1 is characterized in that, described lyophily is handled and comprised: comprising the processing of under the atmosphere of oxygen plasma is shone in the described first storage lattice cofferdam.
According to the formation method of each described film figure of claim 1 or 2, it is characterized in that 3, described lyophily is handled and comprised: to the processing of the described first storage lattice cofferdam irradiation ultraviolet radiation.
According to the formation method of each described film figure of claim 1 or 2, it is characterized in that 4, described lyophily is handled and comprised: the processing of heat treated is carried out in the described first storage lattice cofferdam.
5, according to the formation method of each described film figure of claim 1 or 4, it is characterized in that described functional liquid presents electric conductivity by thermal treatment or optical processing.
6, a kind of manufacture method of device is the manufacture method that has on the substrate device of the operation that forms film figure, it is characterized in that, the formation method of each the described film figure by described claim 1 or 4 forms film figure on described substrate.
7, a kind of electro-optical device is characterized in that, has possessed the device of the manufacture method manufacturing that utilizes the described device of claim 6.
8, a kind of electronic device is characterized in that, has possessed the described electro-optical device of claim 7.
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| JPH11271753A (en) * | 1998-03-18 | 1999-10-08 | Seiko Epson Corp | Thin film forming method, display device, and color filter |
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| JP2003311196A (en) * | 2002-04-19 | 2003-11-05 | Seiko Epson Corp | Method and apparatus for forming film pattern, conductive film wiring, electrooptical apparatus, electronic device, non-contact type card medium, piezoelectric element, and ink-jet recording head |
| CN1459824A (en) * | 2002-03-27 | 2003-12-03 | 精工爱普生株式会社 | Surface treating method and film pattern forming method |
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| JPH11271753A (en) * | 1998-03-18 | 1999-10-08 | Seiko Epson Corp | Thin film forming method, display device, and color filter |
| JP2000158639A (en) * | 1998-11-30 | 2000-06-13 | Canon Inc | Apparatus and method for imaging |
| CN1459824A (en) * | 2002-03-27 | 2003-12-03 | 精工爱普生株式会社 | Surface treating method and film pattern forming method |
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