CN100432811C - 薄膜晶体管液晶显示器像素结构及其制造方法 - Google Patents
薄膜晶体管液晶显示器像素结构及其制造方法 Download PDFInfo
- Publication number
- CN100432811C CN100432811C CNB2006101441986A CN200610144198A CN100432811C CN 100432811 C CN100432811 C CN 100432811C CN B2006101441986 A CNB2006101441986 A CN B2006101441986A CN 200610144198 A CN200610144198 A CN 200610144198A CN 100432811 C CN100432811 C CN 100432811C
- Authority
- CN
- China
- Prior art keywords
- electrode
- transparent film
- layer
- pixel electrode
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000010408 film Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims description 26
- 229910004205 SiNX Inorganic materials 0.000 claims description 17
- 238000009413 insulation Methods 0.000 claims description 17
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract description 7
- 238000010276 construction Methods 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910016048 MoW Inorganic materials 0.000 description 12
- 238000001259 photo etching Methods 0.000 description 11
- 239000004744 fabric Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 206010021703 Indifference Diseases 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101441986A CN100432811C (zh) | 2006-11-29 | 2006-11-29 | 薄膜晶体管液晶显示器像素结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101441986A CN100432811C (zh) | 2006-11-29 | 2006-11-29 | 薄膜晶体管液晶显示器像素结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1971389A CN1971389A (zh) | 2007-05-30 |
CN100432811C true CN100432811C (zh) | 2008-11-12 |
Family
ID=38112278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101441986A Active CN100432811C (zh) | 2006-11-29 | 2006-11-29 | 薄膜晶体管液晶显示器像素结构及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100432811C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101655614B (zh) * | 2008-08-19 | 2011-04-13 | 京东方科技集团股份有限公司 | 液晶显示面板云纹缺陷的检测方法和检测装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1178099C (zh) * | 2001-11-07 | 2004-12-01 | 株式会社日立制作所 | 液晶显示装置 |
WO2005027187A2 (en) * | 2003-09-18 | 2005-03-24 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
CN1667477A (zh) * | 2004-03-11 | 2005-09-14 | Lg.菲利浦Lcd株式会社 | 板内切换模式液晶显示器件及其制造方法 |
CN1794068A (zh) * | 2004-12-24 | 2006-06-28 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
-
2006
- 2006-11-29 CN CNB2006101441986A patent/CN100432811C/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1178099C (zh) * | 2001-11-07 | 2004-12-01 | 株式会社日立制作所 | 液晶显示装置 |
WO2005027187A2 (en) * | 2003-09-18 | 2005-03-24 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
CN1667477A (zh) * | 2004-03-11 | 2005-09-14 | Lg.菲利浦Lcd株式会社 | 板内切换模式液晶显示器件及其制造方法 |
CN1794068A (zh) * | 2004-12-24 | 2006-06-28 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1971389A (zh) | 2007-05-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101556417B (zh) | Ffs型tft-lcd阵列基板结构及其制造方法 | |
CN102156369B (zh) | 薄膜晶体管液晶显示阵列基板及其制造方法 | |
CN102629046B (zh) | 阵列基板及其制造方法、液晶显示器件 | |
CN101887897B (zh) | Tft-lcd阵列基板及其制造方法 | |
US9891488B2 (en) | Array substrate and manufacture method thereof | |
CN101825814B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN100524781C (zh) | 一种薄膜晶体管液晶显示器像素结构及其制造方法 | |
CN100454558C (zh) | 一种tft矩阵结构及其制造方法 | |
CN102156368A (zh) | 薄膜晶体管液晶显示阵列基板及其制造方法 | |
US20120280239A1 (en) | Thin film transistor array substrate and method for fabricating the thin film transistor array substrate | |
CN102023430B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN101520580B (zh) | Tft-lcd阵列基板结构及其制造方法 | |
CN102723269A (zh) | 阵列基板及其制作方法、显示装置 | |
CN102629577A (zh) | 一种tft阵列基板及其制造方法和显示装置 | |
CN102654698A (zh) | 液晶显示器阵列基板及其制造方法、液晶显示器 | |
CN101814511B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN101807584B (zh) | Tft-lcd阵列基板及其制造方法 | |
CN101013709A (zh) | 一种tft阵列结构及其制作方法 | |
CN103887245A (zh) | 一种阵列基板的制造方法 | |
CN104392920A (zh) | Tft阵列基板及其制作方法、显示装置 | |
CN101126876B (zh) | 薄膜晶体管液晶显示器像素结构的制造方法 | |
US9679921B2 (en) | Display substrate and method of fabricating the same | |
CN101364603A (zh) | 一种tft阵列基板结构及其制造方法 | |
CN101373299B (zh) | Ffs薄膜晶体管液晶显示器像素结构及其制造方法 | |
CN202183002U (zh) | 阵列基板及液晶显示器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG PHOTOELECTRIC SCIENCE & TECHNOLOGY C Free format text: FORMER OWNER: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Effective date: 20080104 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20080104 Address after: Zip code 8, West Central Road, Beijing economic and Technological Development Zone: 100176 Applicant after: BOE Optoelectronics Technology Co-applicant after: BOE Technology Group Co., Ltd. Address before: Postal code 10, Jiuxianqiao Road, Beijing, Chaoyang District: 100016 Applicant before: BOE Technology Group Co., Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. |