CN100431164C - 制作基底的方法和制作有机电致发光显示器件的方法 - Google Patents
制作基底的方法和制作有机电致发光显示器件的方法 Download PDFInfo
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- CN100431164C CN100431164C CNB2003101202820A CN200310120282A CN100431164C CN 100431164 C CN100431164 C CN 100431164C CN B2003101202820 A CNB2003101202820 A CN B2003101202820A CN 200310120282 A CN200310120282 A CN 200310120282A CN 100431164 C CN100431164 C CN 100431164C
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR80054/2002 | 2002-12-14 | ||
KR10-2002-0080054A KR100484109B1 (ko) | 2002-12-14 | 2002-12-14 | 기판 제조방법, 이 기판제조방법을 이용한 유기 전계발광표시장치의 제조방법 및 유기 전계 발광 표시장치 |
KR80054/02 | 2002-12-14 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710199809A Division CN100585870C (zh) | 2002-12-14 | 2003-12-12 | 有机电致发光显示器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1509125A CN1509125A (zh) | 2004-06-30 |
CN100431164C true CN100431164C (zh) | 2008-11-05 |
Family
ID=36695820
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CNB2003101202820A Expired - Lifetime CN100431164C (zh) | 2002-12-14 | 2003-12-12 | 制作基底的方法和制作有机电致发光显示器件的方法 |
CN200710199809A Expired - Lifetime CN100585870C (zh) | 2002-12-14 | 2003-12-12 | 有机电致发光显示器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710199809A Expired - Lifetime CN100585870C (zh) | 2002-12-14 | 2003-12-12 | 有机电致发光显示器件 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7049161B2 (zh) |
KR (1) | KR100484109B1 (zh) |
CN (2) | CN100431164C (zh) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050116844A (ko) * | 2003-04-02 | 2005-12-13 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 유연한 전자 디바이스와 유연한 디바이스의 제조방법 |
KR100647631B1 (ko) * | 2004-11-05 | 2006-11-23 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 기판의 제조방법 및 상기방법을 이용한 평판 디스플레이 장치의 제조방법 |
FR2893750B1 (fr) * | 2005-11-22 | 2008-03-14 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif electronique flexible du type ecran comportant une pluralite de composants en couches minces. |
KR100759691B1 (ko) * | 2006-07-04 | 2007-09-17 | 삼성에스디아이 주식회사 | 평판 표시 장치의 제조 방법 |
KR100805589B1 (ko) * | 2006-07-04 | 2008-02-20 | 삼성에스디아이 주식회사 | 평판 표시 장치의 제조 방법 |
US8017220B2 (en) * | 2006-10-04 | 2011-09-13 | Corning Incorporated | Electronic device and method of making |
JP4866200B2 (ja) * | 2006-10-05 | 2012-02-01 | パナソニック株式会社 | 発光デバイスの製造方法 |
EP1921899A1 (en) * | 2006-10-12 | 2008-05-14 | LG Electronics Inc. | Display device and method for manufacturing the same |
KR20080043507A (ko) * | 2006-11-14 | 2008-05-19 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조 방법 |
KR101446226B1 (ko) * | 2006-11-27 | 2014-10-01 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조 방법 |
KR101359916B1 (ko) * | 2007-05-08 | 2014-02-10 | 삼성디스플레이 주식회사 | 가요성 표시 장치의 제조 방법 |
TWI343636B (en) * | 2007-01-29 | 2011-06-11 | Au Optronics Corp | Substrate module and manufacturing method of flexible active matrix devices |
CN101256980B (zh) * | 2007-02-28 | 2011-10-26 | 奇美电子股份有限公司 | 有机电致发光显示装置及其制作方法 |
US7656493B2 (en) * | 2007-07-31 | 2010-02-02 | Arthur Alan R | Pixel well electrodes |
KR101308200B1 (ko) * | 2008-05-06 | 2013-09-13 | 엘지디스플레이 주식회사 | 플렉서블 유기발광 표시장치 및 그 제조 방법 |
KR101481826B1 (ko) * | 2008-05-20 | 2015-01-12 | 엘지디스플레이 주식회사 | 플렉서블 유기발광 표시장치 및 그 제조 방법 |
KR101157659B1 (ko) * | 2009-05-13 | 2012-06-18 | (주)포인트엔지니어링 | 다공성 기판을 이용한 유기발광소자의 제조 방법 |
KR101193197B1 (ko) * | 2010-07-07 | 2012-10-19 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
KR20120077470A (ko) * | 2010-12-30 | 2012-07-10 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR101897743B1 (ko) | 2011-06-01 | 2018-09-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
US9184211B2 (en) * | 2012-07-05 | 2015-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for fabricating the same |
JP2014112525A (ja) * | 2012-10-29 | 2014-06-19 | Nitto Denko Corp | ロールツーロール方式を用いた有機エレクトロルミネッセンスパネルの製造方法 |
CN105226201A (zh) * | 2015-09-02 | 2016-01-06 | 上海和辉光电有限公司 | 一种柔性oled显示器及其制造方法 |
CN107579088B (zh) * | 2016-07-11 | 2021-02-26 | 京东方科技集团股份有限公司 | 一种柔性oled显示面板及其制备方法 |
KR20180033375A (ko) * | 2016-09-23 | 2018-04-03 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN106783883B (zh) * | 2016-12-27 | 2023-11-10 | 京东方科技集团股份有限公司 | 显示基板及其制备方法 |
CN107706194A (zh) * | 2017-09-21 | 2018-02-16 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板和显示装置 |
KR102355103B1 (ko) * | 2017-09-29 | 2022-01-24 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
CN107946482A (zh) * | 2017-11-09 | 2018-04-20 | 信利半导体有限公司 | 一种柔性显示器的制作方法 |
JP6929265B2 (ja) * | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器 |
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JPH08288522A (ja) * | 1995-02-16 | 1996-11-01 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
CN1312590A (zh) * | 2000-02-01 | 2001-09-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
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US6107213A (en) * | 1996-02-01 | 2000-08-22 | Sony Corporation | Method for making thin film semiconductor |
US6326280B1 (en) * | 1995-02-02 | 2001-12-04 | Sony Corporation | Thin film semiconductor and method for making thin film semiconductor |
JP3381443B2 (ja) * | 1995-02-02 | 2003-02-24 | ソニー株式会社 | 基体から半導体層を分離する方法、半導体素子の製造方法およびsoi基板の製造方法 |
JP2755216B2 (ja) | 1995-06-20 | 1998-05-20 | 日本電気株式会社 | 有機薄膜el素子の製造方法 |
JP2000123971A (ja) | 1998-10-15 | 2000-04-28 | Futaba Corp | 有機elの製造方法 |
TW468269B (en) * | 1999-01-28 | 2001-12-11 | Semiconductor Energy Lab | Serial-to-parallel conversion circuit, and semiconductor display device employing the same |
JP2001249626A (ja) * | 2000-03-03 | 2001-09-14 | Sharp Corp | 表示装置および表示装置の製造方法 |
-
2002
- 2002-12-14 KR KR10-2002-0080054A patent/KR100484109B1/ko active IP Right Grant
-
2003
- 2003-12-04 US US10/726,667 patent/US7049161B2/en not_active Expired - Lifetime
- 2003-12-12 CN CNB2003101202820A patent/CN100431164C/zh not_active Expired - Lifetime
- 2003-12-12 CN CN200710199809A patent/CN100585870C/zh not_active Expired - Lifetime
-
2006
- 2006-03-28 US US11/390,441 patent/US7307281B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08288522A (ja) * | 1995-02-16 | 1996-11-01 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US5821138A (en) * | 1995-02-16 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding |
CN1312590A (zh) * | 2000-02-01 | 2001-09-12 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7307281B2 (en) | 2007-12-11 |
KR100484109B1 (ko) | 2005-04-18 |
CN101197391A (zh) | 2008-06-11 |
CN100585870C (zh) | 2010-01-27 |
US20060163565A1 (en) | 2006-07-27 |
US20040115852A1 (en) | 2004-06-17 |
CN1509125A (zh) | 2004-06-30 |
KR20040053495A (ko) | 2004-06-24 |
US7049161B2 (en) | 2006-05-23 |
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