CN100423828C - Silicon powder surface etching device - Google Patents
Silicon powder surface etching device Download PDFInfo
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- CN100423828C CN100423828C CNB2006101255696A CN200610125569A CN100423828C CN 100423828 C CN100423828 C CN 100423828C CN B2006101255696 A CNB2006101255696 A CN B2006101255696A CN 200610125569 A CN200610125569 A CN 200610125569A CN 100423828 C CN100423828 C CN 100423828C
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- reative cell
- water cooling
- silicon powder
- etching device
- negative electrode
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/141—Feedstock
Abstract
The invention relates to a silicon surface etching device to shorten the reaction time, simplifying structure, improving the silicon power purifying efficiency. Feeding can, output can and etching gas transmission system are connected on the reaction chamber, plate type positive and negative electrodes installed in parallel in the reaction chamber, with the negative pole connected with the water cooling device that connected with seal wave tube and the bottom of the reaction chamber actively, bottom of the water cooling device connecting with the vibrating source through vibrating shift lever, with the seal wave tube, vibrating shift lever and vibrating source on the bottom bracket that fastened to the bottom and installed on the oblique angle adjusting bracket. The invention can meet the etching requirement once for all with healthy and friendly environment.
Description
Technical field
The invention belongs to plasma application, particularly a kind of silicon powder surface etching device, the purifying that is applicable to the silica flour grain is to be used for the modification on solar cell and various powders surface.
Background technology
The applied semiconductor silicon purity of semiconductor devices and integrated circuit is 99 to 11 9, based on very high purity, and cost is extremely expensive, and its purification and drawing method are not suitable for being used for making solar-grade silicon (its purity is 99.99% to 99.99999).Since zero year generation in last century seven, the purification process research of solar-grade silicon has been carried out in beautiful, Europe energetically because of oil crisis.Developed tens of kinds of different technology,, up to now, also sent out not stopping as purification techniques such as hydrometallurgy, electro-deposition methods, but all these methods are not the expense costlinesses be exactly purify undesirable.Over nearly 5 years, because oil huge price increase and more and more higher to requirement on environmental protection, the research of solar-grade silicon has formed new climax, constantly has new method to release, and these methods still can not satisfy the cost requirement of solar-grade silicon.The application of micro mist is extensive day by day on the other hand, micro mist surface topography, cleannes etc. are required constantly to propose, and be the important requirement that micro mist is used by the surface etch modification, wherein the purifying effect to the silica flour body is the focus of paying close attention to always.The application for a patent for invention that publication number CN1669630, name are called " purifying of powder in cold plasma " discloses a kind of plasma purification devices, comprise vertical exoelectrical reaction chamber, charge can, the vibration parts such as sieve, reacting gas induction system, the unit of bleeding, powder collecting box, powder send-back system and power supply that feed intake, wherein electrode surface is vertically placed, the silt deposition direction is parallel with electrode, thereby the reaction time is short, need be provided with the powder send-back system, realize repeatedly purifying repeatedly.
Summary of the invention
The invention provides a kind of silicon powder surface etching device, purpose is to shorten the powder reaction time, simplifies apparatus structure, improves the silica flour purification efficiency, to satisfy the requirement of powder surface modification.
A kind of silicon powder surface etching device of the present invention connects charging tank, discharge tank and etching gas induction system on the reative cell, parallel slab anode and the negative electrode of being equipped with in the reative cell, and slab anode and negative electrode and discharge power supply are electrically connected; It is characterized in that: (1) described negative electrode is connected with water cooling plant, and water cooling plant passes the reative cell bottom and flexibly connects by seal bellows and reative cell bottom, and the water cooling plant bottom connects vibration source by the vibration selector bar; (2) described vibration source is positioned on the underframe, and underframe is fixedlyed connected with the reative cell bottom; (3) described underframe is installed on the inclination angle adjustment support.
Described silicon powder surface etching device is characterized in that: described etching gas induction system is argon gas input port and the argon gas outlet that reative cell is provided with.
Described silicon powder surface etching device is characterized in that: rate of feeding control valve and reinforced seal valve are equipped with in described charging tank and reative cell connecting pipe position; The discharging seal valve is equipped with at described discharge tank and reative cell connecting pipe position.
During work, powder is placed cathode surface by charging tank, this place's ion energy maximum, so etch rate is the highest.Negative electrode vibration makes powder spring back do parabolic motion at cathode surface, skips spring again behind the small distance at every turn, meets the face that bumps ion after each spring and makes randomly changing and make surface etch even; Simultaneously, the vibration of negative electrode can make powder group discrete, and powder is uniformly distributed on the cathode plane.Etching gas Ar from bottom to top brushes the distance that can reduce the each spring of powder along negative electrode and prolongs the time that powder once glides, and changes the time that gas flow and pumping speed can change each processing; Adopt inert gas as physics be etched be beneficial to environmental protection and handle after powder do not need to remake processing such as cleaning.Change brushing speed and can satisfying powder and in reative cell, only promptly satisfy the etching requirement of the frequency of negative electrode angle of inclination, vibration source and amplitude and above-mentioned etching gas through once gliding.
The present invention adopts the vibration negative electrode of tilting, makes powder always be near the slip of cathode surface, and vibration can make powder be distributed in negative electrode, breaks up the silica flour agglomerate; The highest etch rate of this place's ion energy is also high; Because the downslide time can be up to 5 to 10 minutes, but therefore the etching requirement is satisfied in single treatment; Owing to only adopt argon gas to carry out physical etchings, be very beneficial for environmental protection and operator ' s health.Powder once can etch away the thick surface of nearly 1 μ m through reative cell, and silica flour purity can bring up to 99.99% by 99%.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is powder motion principle figure.
The specific embodiment
As shown in Figure 1, the present invention includes: charging tank 1, rate of feeding control valve 2, reinforced seal valve 3, anode 4, water-cooled cathode 5, argon gas input port 6, discharging seal valve 7, discharge tank 8, seal bellows 9, vibration selector bar 10, vibration source 11, support 12, argon gas outlet (to air exhauster) 13 are adjusted in the inclination angle.
Fig. 2 is powder motion principle figure, and among the figure, X is a horizontal coordinate, and Y is vertical coordinate, and α is the electrode inclination angle, V
gBe argon gas flow velocity, V
oFor powder ejects speed, wave is the movement locus of powder.
The long 60cm of the negative electrode of etching device, wide is 12cm, and anode is long to be 56cm, and wide is 11cm, and electrode spacing is 1.5cm.With this equipment industrial silicon (purity is 99%) being carried out the small-scale etching purifies.Relevant technological parameter is as follows: the silica flour crystallite dimension is 100 μ m, and throwing powder speed is 5g/min; Vacuum is 2Pa, and argon flow amount 20sccm/min, discharge voltage source voltage are 2500V, and power is 2KW, and the electrode inclination angle is 30 °, and the frequency of vibration source is 100Hz.Adjust support 12 by the inclination angle and adjust electrode inclination angle, argon flow amount and vacuum pumping speed, make the downslide of powder in electrode length 60cm scope for up to 4～5min, lead to into electrode cooling water, begin to feed intake after the startup discharge power supply meets the demands discharge voltage and electric current.This technology is per hour about can bring up to 99.99% by 99% with the purity of 300g silica flour.
If with above-mentioned products obtained therefrom refuse, solidify that to make its crystallite dimension be the silica flour purifying again that is ground into again about 100 μ m about 100 μ m, then its purity can reach 99.999%.This moment, the input speed of silica flour can improve 10 times, and the downslide time then only needs 0.5 minute just enough.
Claims (3)
1. a silicon powder surface etching device connects charging tank, discharge tank and etching gas induction system on the reative cell, parallel slab anode and the negative electrode of being equipped with in the reative cell, and slab anode and negative electrode and discharge power supply are electrically connected; It is characterized in that: (1) described negative electrode is connected with water cooling plant, and water cooling plant passes the reative cell bottom and flexibly connects by seal bellows and reative cell bottom, and the water cooling plant bottom connects vibration source by the vibration selector bar; (2) described vibration source is positioned on the underframe, and underframe is fixedlyed connected with the reative cell bottom; (3) described underframe is installed on the inclination angle adjustment support.
2. silicon powder surface etching device as claimed in claim 1 is characterized in that: described etching gas induction system is argon gas input port and the argon gas outlet that reative cell is provided with.
3. silicon powder surface etching device as claimed in claim 1 or 2 is characterized in that: rate of feeding control valve and reinforced seal valve are equipped with in described charging tank and reative cell connecting pipe position; The discharging seal valve is equipped with at described discharge tank and reative cell connecting pipe position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101255696A CN100423828C (en) | 2006-12-22 | 2006-12-22 | Silicon powder surface etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101255696A CN100423828C (en) | 2006-12-22 | 2006-12-22 | Silicon powder surface etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101011651A CN101011651A (en) | 2007-08-08 |
| CN100423828C true CN100423828C (en) | 2008-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2006101255696A Expired - Fee Related CN100423828C (en) | 2006-12-22 | 2006-12-22 | Silicon powder surface etching device |
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| CN (1) | CN100423828C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101723377A (en) * | 2008-10-28 | 2010-06-09 | 刘铁林 | Method and device for purification of silicon |
| CN102381711A (en) * | 2011-07-05 | 2012-03-21 | 兰州大学 | Method for purifying metallurgical-grade polycrystalline silicon by using microwave plasmas |
| CN102563916A (en) * | 2011-12-08 | 2012-07-11 | 吴江云峰金属购件涂装有限公司 | Solar coating pretreatment tank |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1669630A (en) * | 2004-12-21 | 2005-09-21 | 广西工学院 | Purification of powder particle in cold plasma |
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2006
- 2006-12-22 CN CNB2006101255696A patent/CN100423828C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1669630A (en) * | 2004-12-21 | 2005-09-21 | 广西工学院 | Purification of powder particle in cold plasma |
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| CN101011651A (en) | 2007-08-08 |
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